Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73034) > Сторінка 687 з 1218
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74LVC2G14FW4-7 | Diodes Incorporated |
Description: IC INVERT 2CH 2-INP DFN1010-6Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1010-6 Input Logic Level - High: 1.7V ~ 3.8V Input Logic Level - Low: 0.25V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 40 µA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G14FW4-7 | Diodes Incorporated |
Description: IC INVERT 2CH 2-INP DFN1010-6Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1010-6 Input Logic Level - High: 1.7V ~ 3.8V Input Logic Level - Low: 0.25V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 40 µA |
на замовлення 3475 шт: термін постачання 21-31 дні (днів) |
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1.5KE33A-B | Diodes Incorporated |
Description: TVS DIODE 28.2VWM 45.7VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDM20E40C-7-F | Diodes Incorporated |
Description: DIODE ARR SCHOT 40V 400MA SC593Current - Reverse Leakage @ Vr: 70 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -30°C ~ 125°C Supplier Device Package: SC-59-3 Current - Average Rectified (Io) (per Diode): 400mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SDM20E40C-7-F | Diodes Incorporated |
Description: DIODE ARR SCHOT 40V 400MA SC593Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 70 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -30°C ~ 125°C Supplier Device Package: SC-59-3 Current - Average Rectified (Io) (per Diode): 400mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 3053 шт: термін постачання 21-31 дні (днів) |
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BAS70-04Q-13-F | Diodes Incorporated |
Description: DIODE ARR SCHOT 70V 70MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4448WS-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 75V 500MA SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
на замовлення 1413000 шт: термін постачання 21-31 дні (днів) |
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1N4448WS-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 75V 500MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
на замовлення 1414741 шт: термін постачання 21-31 дні (днів) |
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1N4448W-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 75V 250MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
на замовлення 426000 шт: термін постачання 21-31 дні (днів) |
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1N4448W-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 75V 250MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
на замовлення 428917 шт: термін постачання 21-31 дні (днів) |
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1N4448HWS-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 80V 250MA SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 294000 шт: термін постачання 21-31 дні (днів) |
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1N4448HWS-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 80V 250MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 296430 шт: термін постачання 21-31 дні (днів) |
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DDTC113ZE-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 150MW SOT523Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DDTC113TUA-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 200MW SOT323Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BAS21DWA-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 250V 100MA SOT353Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-353 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 270000 шт: термін постачання 21-31 дні (днів) |
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BAS21DWA-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 250V 100MA SOT353Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-353 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 272823 шт: термін постачання 21-31 дні (днів) |
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MMBT2907A-7-F-W | Diodes Incorporated |
Description: TRANS PNP 60V 0.6A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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MMBT2907A-7-F-W | Diodes Incorporated |
Description: TRANS PNP 60V 0.6A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
на замовлення 100918 шт: термін постачання 21-31 дні (днів) |
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BAV99-13-F-W | Diodes Incorporated |
Description: DIODE ARRAY GP 75V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
на замовлення 170000 шт: термін постачання 21-31 дні (днів) |
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BAV99-13-F-W | Diodes Incorporated |
Description: DIODE ARRAY GP 75V 300MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
на замовлення 176480 шт: термін постачання 21-31 дні (днів) |
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DMG3402LQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMG3402LQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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FK2500060 | Diodes Incorporated |
Description: XTAL OSC XO 25.0000MHZ CMOSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 25 MHz Base Resonator: Crystal |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FK2500060 | Diodes Incorporated |
Description: XTAL OSC XO 25.0000MHZ CMOSPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 25 MHz Base Resonator: Crystal |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMAJ51AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 51VWM 82.4VC SMAType: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 82.4V Voltage - Breakdown (Min): 56.7V Unidirectional Channels: 1 Supplier Device Package: SMA Voltage - Reverse Standoff (Typ): 51V Current - Peak Pulse (10/1000µs): 4.9A Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SMAJ51AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 51VWM 82.4VC SMAQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 82.4V Voltage - Breakdown (Min): 56.7V Unidirectional Channels: 1 Supplier Device Package: SMA Voltage - Reverse Standoff (Typ): 51V Current - Peak Pulse (10/1000µs): 4.9A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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D5V0X1B2LPQ-7B | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 14VC X1DFN10062Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 14V Voltage - Breakdown (Min): 7V Bidirectional Channels: 1 Supplier Device Package: X1-DFN1006-2 Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Capacitance @ Frequency: 0.3pF @ 1MHz Applications: HDMI, USB |
на замовлення 1180000 шт: термін постачання 21-31 дні (днів) |
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D5V0X1B2LPQ-7B | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 14VC X1DFN10062Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 14V Voltage - Breakdown (Min): 7V Bidirectional Channels: 1 Supplier Device Package: X1-DFN1006-2 Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Capacitance @ Frequency: 0.3pF @ 1MHz Applications: HDMI, USB Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Cut Tape (CT) |
на замовлення 1184067 шт: термін постачання 21-31 дні (днів) |
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ZLLS400QTC | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 520MA SOD323Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-323 Current - Average Rectified (Io): 520mA Capacitance @ Vr, F: 15pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 2400000 шт: термін постачання 21-31 дні (днів) |
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ZLLS400QTC | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 520MA SOD323Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-323 Current - Average Rectified (Io): 520mA Capacitance @ Vr, F: 15pF @ 30V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 3 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 2404405 шт: термін постачання 21-31 дні (днів) |
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B560C | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 5A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 7124 шт: термін постачання 21-31 дні (днів) |
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DXTN3C100PSQ-13 | Diodes Incorporated |
Description: TRANS NPN 100V 3A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V Frequency - Transition: 140MHz Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W Qualification: AEC-Q101 |
на замовлення 2321 шт: термін постачання 21-31 дні (днів) |
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DXTP3C60PSQ-13 | Diodes Incorporated |
Description: TRANS PNP 60V 3A POWERDI5060-8DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Operating Temperature: -55°C ~ 175°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Power - Max: 5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3 A Grade: Automotive Supplier Device Package: PowerDI5060-8 Frequency - Transition: 135MHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DXTP3C60PSQ-13 | Diodes Incorporated |
Description: TRANS PNP 60V 3A POWERDI5060-8Qualification: AEC-Q101 Power - Max: 5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3 A Grade: Automotive Supplier Device Package: PowerDI5060-8 Frequency - Transition: 135MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Operating Temperature: -55°C ~ 175°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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DMNH6021SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 55A PWRDI5060-8Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMNH6021SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 55A PWRDI5060-8Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4466 шт: термін постачання 21-31 дні (днів) |
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1N4148WT-76K | Diodes Incorporated |
Description: DIODE STANDARD 80V 125MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 125mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 2849 шт: термін постачання 21-31 дні (днів) |
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| US2M_HF | Diodes Incorporated |
Description: DIODE STANDARD 1000V 2A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 2936 шт: термін постачання 21-31 дні (днів) |
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D20V0H1U2LP-7B | Diodes Incorporated |
Description: TVS DIODE 20VWM 34V X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 20V (Max) Supplier Device Package: X1-DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22V Voltage - Clamping (Max) @ Ipp: 34V Power - Peak Pulse: 340W Power Line Protection: No |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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| BC817-40FSWQ-7 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: U-DFN1412-3/SWP (Type A) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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SBR10U150CT | Diodes Incorporated |
Description: DIODE ARRAY SBR 150V 5A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 150 V |
на замовлення 4600 шт: термін постачання 21-31 дні (днів) |
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D5V0Q1B2CSP-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 8.4V X2DSN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 5.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X2-DSN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 8.4V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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GC0350001 | Diodes Incorporated |
Description: CRYSTAL METAL CAN 49S/SMD T&R 1KPackaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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GC0350012 | Diodes Incorporated |
Description: CRYSTAL 3.579545MHZ 18PFPackaging: Tape & Reel (TR) Load Capacitance: 18pF Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 150 Ohms Frequency: 3.579545 MHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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GC0360007 | Diodes Incorporated |
Description: CRYSTAL METAL CAN 49S/SMD T&R 1KPackaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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GC0360021 | Diodes Incorporated |
Description: CRYSTAL METAL CAN 49S/SMD T&R 1KPackaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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DGD0211EWT-7 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: TSOT-25 Rise / Fall Time (Typ): 17ns, 18ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1.9A, 1.8A |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DGD0211EWT-7 | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: TSOT-25 Rise / Fall Time (Typ): 17ns, 18ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1.9A, 1.8A |
на замовлення 8550 шт: термін постачання 21-31 дні (днів) |
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BC817-25-7-F-W | Diodes Incorporated |
Description: TRANS NPN 45V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BC817-25-7-F-W | Diodes Incorporated |
Description: TRANS NPN 45V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 16258 шт: термін постачання 21-31 дні (днів) |
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BC807-25-7-F-W | Diodes Incorporated |
Description: TRANS PNP 45V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BC807-25-7-F-W | Diodes Incorporated |
Description: TRANS PNP 45V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 32825 шт: термін постачання 21-31 дні (днів) |
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1N4148W-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 100V 150MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1980000 шт: термін постачання 21-31 дні (днів) |
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1N4148W-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 100V 150MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1981574 шт: термін постачання 21-31 дні (днів) |
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DMT616MLSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DMT616MLSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
на замовлення 22418 шт: термін постачання 21-31 дні (днів) |
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DMT67M8LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMT67M8LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V |
на замовлення 6380 шт: термін постачання 21-31 дні (днів) |
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DMP65H20D0HSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 501V~650V SO-8 T&RPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DMP65H20D0HSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 501V~650V SO-8 T&RPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| 74LVC2G14FW4-7 |
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Виробник: Diodes Incorporated
Description: IC INVERT 2CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Description: IC INVERT 2CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 74LVC2G14FW4-7 |
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Виробник: Diodes Incorporated
Description: IC INVERT 2CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Description: IC INVERT 2CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
на замовлення 3475 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 29+ | 10.51 грн |
| 34+ | 9.23 грн |
| 100+ | 7.43 грн |
| 250+ | 6.83 грн |
| 500+ | 6.46 грн |
| 1000+ | 6.06 грн |
| 2500+ | 5.90 грн |
| 1.5KE33A-B |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 28.2VWM 45.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 28.2VWM 45.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| SDM20E40C-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 400MA SC593
Current - Reverse Leakage @ Vr: 70 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -30°C ~ 125°C
Supplier Device Package: SC-59-3
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOT 40V 400MA SC593
Current - Reverse Leakage @ Vr: 70 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -30°C ~ 125°C
Supplier Device Package: SC-59-3
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.11 грн |
| SDM20E40C-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 40V 400MA SC593
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 70 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -30°C ~ 125°C
Supplier Device Package: SC-59-3
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: DIODE ARR SCHOT 40V 400MA SC593
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 70 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -30°C ~ 125°C
Supplier Device Package: SC-59-3
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 3053 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 26+ | 11.73 грн |
| 100+ | 9.69 грн |
| 500+ | 6.76 грн |
| 1000+ | 6.01 грн |
| BAS70-04Q-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 70V 70MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 70V 70MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1N4448WS-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE STANDARD 75V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
на замовлення 1413000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.91 грн |
| 6000+ | 2.50 грн |
| 9000+ | 2.35 грн |
| 15000+ | 2.04 грн |
| 21000+ | 1.95 грн |
| 30000+ | 1.85 грн |
| 1N4448WS-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE STANDARD 75V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
на замовлення 1414741 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 15.03 грн |
| 36+ | 8.53 грн |
| 100+ | 5.29 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.19 грн |
| 1N4448W-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
на замовлення 426000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.60 грн |
| 6000+ | 2.23 грн |
| 9000+ | 2.09 грн |
| 15000+ | 1.82 грн |
| 21000+ | 1.73 грн |
| 30000+ | 1.64 грн |
| 1N4448W-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
на замовлення 428917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.66 грн |
| 40+ | 7.69 грн |
| 100+ | 4.75 грн |
| 500+ | 3.25 грн |
| 1000+ | 2.85 грн |
| 1N4448HWS-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 294000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.99 грн |
| 6000+ | 2.57 грн |
| 9000+ | 2.42 грн |
| 15000+ | 2.10 грн |
| 21000+ | 2.00 грн |
| 30000+ | 1.91 грн |
| 1N4448HWS-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE STANDARD 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 296430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 15.03 грн |
| 35+ | 8.76 грн |
| 100+ | 5.42 грн |
| 500+ | 3.72 грн |
| 1000+ | 3.27 грн |
| DDTC113ZE-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Description: TRANS PREBIAS NPN 150MW SOT523
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS21DWA-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 250V 100MA SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-353
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 250V 100MA SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-353
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 270000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.50 грн |
| 6000+ | 3.90 грн |
| 9000+ | 3.68 грн |
| 15000+ | 3.22 грн |
| 21000+ | 3.08 грн |
| 30000+ | 2.94 грн |
| BAS21DWA-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 250V 100MA SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-353
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 250V 100MA SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-353
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 272823 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.36 грн |
| 24+ | 12.72 грн |
| 100+ | 7.97 грн |
| 500+ | 5.52 грн |
| 1000+ | 4.88 грн |
| MMBT2907A-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.31 грн |
| 6000+ | 1.98 грн |
| 9000+ | 1.85 грн |
| 15000+ | 1.61 грн |
| 21000+ | 1.53 грн |
| 30000+ | 1.45 грн |
| MMBT2907A-7-F-W |
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Виробник: Diodes Incorporated
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
на замовлення 100918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 44+ | 6.93 грн |
| 100+ | 4.25 грн |
| 500+ | 2.89 грн |
| 1000+ | 2.54 грн |
| BAV99-13-F-W |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
на замовлення 170000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 1.66 грн |
| 20000+ | 1.43 грн |
| 30000+ | 1.35 грн |
| 50000+ | 1.18 грн |
| 70000+ | 1.13 грн |
| 100000+ | 1.08 грн |
| BAV99-13-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
на замовлення 176480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.29 грн |
| 50+ | 6.17 грн |
| 100+ | 3.76 грн |
| 500+ | 2.56 грн |
| 1000+ | 2.24 грн |
| 2000+ | 1.97 грн |
| 5000+ | 1.65 грн |
| DMG3402LQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMG3402LQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 45.89 грн |
| 12+ | 27.58 грн |
| FK2500060 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 53.08 грн |
| FK2500060 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.24 грн |
| 10+ | 72.30 грн |
| 25+ | 68.42 грн |
| 50+ | 61.56 грн |
| 100+ | 59.00 грн |
| 250+ | 55.80 грн |
| 500+ | 52.61 грн |
| 1000+ | 50.44 грн |
| SMAJ51AQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 51VWM 82.4VC SMA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 4.9A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TVS DIODE 51VWM 82.4VC SMA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 4.9A
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 7.23 грн |
| 10000+ | 6.37 грн |
| 15000+ | 6.07 грн |
| SMAJ51AQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 51VWM 82.4VC SMA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 4.9A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: TVS DIODE 51VWM 82.4VC SMA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Unidirectional Channels: 1
Supplier Device Package: SMA
Voltage - Reverse Standoff (Typ): 51V
Current - Peak Pulse (10/1000µs): 4.9A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 21.33 грн |
| 100+ | 13.52 грн |
| 500+ | 9.54 грн |
| 1000+ | 8.52 грн |
| 2000+ | 7.67 грн |
| D5V0X1B2LPQ-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: HDMI, USB
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: HDMI, USB
на замовлення 1180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.17 грн |
| 20000+ | 2.06 грн |
| D5V0X1B2LPQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 7V
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: HDMI, USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
на замовлення 1184067 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.20 грн |
| 28+ | 10.97 грн |
| 100+ | 5.04 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.19 грн |
| 2000+ | 3.13 грн |
| 5000+ | 3.02 грн |
| ZLLS400QTC |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 520MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 520mA
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 520MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 520mA
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 2400000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 9.42 грн |
| 20000+ | 8.41 грн |
| 30000+ | 8.17 грн |
| ZLLS400QTC |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 520MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 520mA
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 520MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 520mA
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 3 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 2404405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.26 грн |
| 11+ | 28.87 грн |
| 100+ | 18.55 грн |
| 500+ | 13.24 грн |
| 1000+ | 11.89 грн |
| 2000+ | 10.76 грн |
| 5000+ | 9.38 грн |
| B560C |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 26.51 грн |
| 100+ | 16.93 грн |
| 500+ | 12.01 грн |
| 1000+ | 10.76 грн |
| DXTN3C100PSQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Qualification: AEC-Q101
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 36.87 грн |
| 100+ | 23.93 грн |
| 500+ | 17.24 грн |
| 1000+ | 15.56 грн |
| DXTP3C60PSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 3A POWERDI5060-8
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Frequency - Transition: 135MHz
Description: TRANS PNP 60V 3A POWERDI5060-8
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Frequency - Transition: 135MHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DXTP3C60PSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 3A POWERDI5060-8
Qualification: AEC-Q101
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: TRANS PNP 60V 3A POWERDI5060-8
Qualification: AEC-Q101
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 36.87 грн |
| 100+ | 23.96 грн |
| 500+ | 17.26 грн |
| 1000+ | 15.57 грн |
| DMNH6021SPSQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 20.69 грн |
| DMNH6021SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.62 грн |
| 10+ | 48.53 грн |
| 100+ | 32.74 грн |
| 500+ | 23.87 грн |
| 1000+ | 21.67 грн |
| 1N4148WT-76K |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 2849 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 34+ | 9.22 грн |
| 100+ | 5.70 грн |
| 500+ | 3.91 грн |
| 1000+ | 3.44 грн |
| 2000+ | 3.05 грн |
| US2M_HF |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 2936 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.08 грн |
| 45+ | 6.78 грн |
| 52+ | 5.97 грн |
| 100+ | 4.77 грн |
| 250+ | 4.36 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.85 грн |
| D20V0H1U2LP-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 20VWM 34V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 34V
Power - Peak Pulse: 340W
Power Line Protection: No
Description: TVS DIODE 20VWM 34V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 34V
Power - Peak Pulse: 340W
Power Line Protection: No
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.44 грн |
| 20000+ | 2.35 грн |
| 30000+ | 2.06 грн |
| BC817-40FSWQ-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SBR10U150CT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 150V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Description: DIODE ARRAY SBR 150V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 51.96 грн |
| D5V0Q1B2CSP-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 8.4V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 5.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 8.4V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 5.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| GC0350001 |
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Виробник: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| GC0350012 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 3.579545MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 150 Ohms
Frequency: 3.579545 MHz
Description: CRYSTAL 3.579545MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 150 Ohms
Frequency: 3.579545 MHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| GC0360007 |
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Виробник: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| GC0360021 |
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Виробник: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| DGD0211EWT-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 19.76 грн |
| 6000+ | 18.54 грн |
| DGD0211EWT-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Description: IC
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
на замовлення 8550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.51 грн |
| 11+ | 29.94 грн |
| 25+ | 26.82 грн |
| 100+ | 21.99 грн |
| 250+ | 20.46 грн |
| 500+ | 19.54 грн |
| 1000+ | 18.48 грн |
| BC817-25-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.52 грн |
| 6000+ | 3.04 грн |
| 9000+ | 2.86 грн |
| 15000+ | 2.50 грн |
| BC817-25-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 16258 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 30+ | 10.21 грн |
| 100+ | 6.33 грн |
| 500+ | 4.36 грн |
| 1000+ | 3.84 грн |
| BC807-25-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.08 грн |
| 6000+ | 3.53 грн |
| 9000+ | 3.33 грн |
| 15000+ | 2.91 грн |
| 21000+ | 2.78 грн |
| 30000+ | 2.66 грн |
| BC807-25-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 32825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.78 грн |
| 27+ | 11.66 грн |
| 100+ | 7.27 грн |
| 500+ | 5.02 грн |
| 1000+ | 4.43 грн |
| 1N4148W-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1980000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.21 грн |
| 6000+ | 1.89 грн |
| 9000+ | 1.77 грн |
| 15000+ | 1.53 грн |
| 21000+ | 1.46 грн |
| 30000+ | 1.38 грн |
| 1N4148W-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1981574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 46+ | 6.63 грн |
| 100+ | 4.08 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.43 грн |
| DMT616MLSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 11.77 грн |
| 5000+ | 9.59 грн |
| 7500+ | 9.23 грн |
| 12500+ | 8.34 грн |
| 17500+ | 8.17 грн |
| DMT616MLSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
на замовлення 22418 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.84 грн |
| 11+ | 29.41 грн |
| 100+ | 18.95 грн |
| 500+ | 13.49 грн |
| 1000+ | 12.12 грн |
| DMT67M8LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 21.98 грн |
| 5000+ | 20.67 грн |
| DMT67M8LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
на замовлення 6380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 87.03 грн |
| 10+ | 52.42 грн |
| 100+ | 34.63 грн |
| 500+ | 25.30 грн |
| 1000+ | 22.98 грн |
| DMP65H20D0HSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 24.06 грн |
| DMP65H20D0HSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.55 грн |
| 10+ | 68.26 грн |
| 100+ | 45.05 грн |
| 500+ | 33.13 грн |
| 1000+ | 30.16 грн |
| 2000+ | 28.65 грн |






















