Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72157) > Сторінка 687 з 1203
| Фото | Назва | Виробник | Інформація |
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DMG3402LQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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FK2500060 | Diodes Incorporated |
Description: XTAL OSC XO 25.0000MHZ CMOSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 25 MHz Base Resonator: Crystal |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FK2500060 | Diodes Incorporated |
Description: XTAL OSC XO 25.0000MHZ CMOSPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 25 MHz Base Resonator: Crystal |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMAJ51AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 51VWM 82.4VC SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SMAJ51AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 51VWM 82.4VC SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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D5V0X1B2LPQ-7B | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 14VC X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X1-DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 14V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1180000 шт: термін постачання 21-31 дні (днів) |
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D5V0X1B2LPQ-7B | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 14VC X1DFN10062Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X1-DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 14V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1184067 шт: термін постачання 21-31 дні (днів) |
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ZLLS400QTC | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 520MA SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 15pF @ 30V, 1MHz Current - Average Rectified (Io): 520mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Current - Reverse Leakage @ Vr: 10 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 2400000 шт: термін постачання 21-31 дні (днів) |
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ZLLS400QTC | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 520MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 15pF @ 30V, 1MHz Current - Average Rectified (Io): 520mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Current - Reverse Leakage @ Vr: 10 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 2404405 шт: термін постачання 21-31 дні (днів) |
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B560C | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 5A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 7124 шт: термін постачання 21-31 дні (днів) |
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DXTN3C100PSQ-13 | Diodes Incorporated |
Description: TRANS NPN 100V 3A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V Frequency - Transition: 140MHz Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 5 W Qualification: AEC-Q101 |
на замовлення 2321 шт: термін постачання 21-31 дні (днів) |
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DXTP3C60PSQ-13 | Diodes Incorporated |
Description: TRANS PNP 60V 3A POWERDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 135MHz Supplier Device Package: PowerDI5060-8 Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DXTP3C60PSQ-13 | Diodes Incorporated |
Description: TRANS PNP 60V 3A POWERDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 135MHz Supplier Device Package: PowerDI5060-8 Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W Qualification: AEC-Q101 |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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DMNH6021SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 55A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V Power Dissipation (Max): 1.6W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMNH6021SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 55A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V Power Dissipation (Max): 1.6W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4466 шт: термін постачання 21-31 дні (днів) |
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1N4148WT-76K | Diodes Incorporated |
Description: DIODE STANDARD 80V 125MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 125mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 3129 шт: термін постачання 21-31 дні (днів) |
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| US2M_HF | Diodes Incorporated |
Description: DIODE STANDARD 1000V 2A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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D20V0H1U2LP-7B | Diodes Incorporated |
Description: TVS DIODE 20VWM 34V X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 20V (Max) Supplier Device Package: X1-DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22V Voltage - Clamping (Max) @ Ipp: 34V Power - Peak Pulse: 340W Power Line Protection: No |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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| BC817-40FSWQ-7 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: U-DFN1412-3/SWP (Type A) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBR10U150CT | Diodes Incorporated |
Description: DIODE ARRAY SBR 150V 5A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 150 V |
на замовлення 4600 шт: термін постачання 21-31 дні (днів) |
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D5V0Q1B2CSP-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 8.4V X2DSN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 5.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X2-DSN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 8.4V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GC0350001 | Diodes Incorporated |
Description: CRYSTAL METAL CAN 49S/SMD T&R 1KPackaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GC0350012 | Diodes Incorporated |
Description: CRYSTAL 3.579545MHZ 18PFPackaging: Tape & Reel (TR) Load Capacitance: 18pF Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 150 Ohms Frequency: 3.579545 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GC0360007 | Diodes Incorporated |
Description: CRYSTAL METAL CAN 49S/SMD T&R 1KPackaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GC0360021 | Diodes Incorporated |
Description: CRYSTAL METAL CAN 49S/SMD T&R 1KPackaging: Tape & Reel (TR) Type: MHz Crystal Operating Mode: Fundamental |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DGD0211EWT-7 | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: TSOT-25 Rise / Fall Time (Typ): 17ns, 18ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1.9A, 1.8A |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DGD0211EWT-7 | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: TSOT-25 Rise / Fall Time (Typ): 17ns, 18ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 1.9A, 1.8A |
на замовлення 8550 шт: термін постачання 21-31 дні (днів) |
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BC817-25-7-F-W | Diodes Incorporated |
Description: TRANS NPN 45V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC817-25-7-F-W | Diodes Incorporated |
Description: TRANS NPN 45V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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BC807-25-7-F-W | Diodes Incorporated |
Description: TRANS PNP 45V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BC807-25-7-F-W | Diodes Incorporated |
Description: TRANS PNP 45V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 32825 шт: термін постачання 21-31 дні (днів) |
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1N4148W-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 100V 150MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1980000 шт: термін постачання 21-31 дні (днів) |
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1N4148W-7-F-W | Diodes Incorporated |
Description: DIODE STANDARD 100V 150MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1981574 шт: термін постачання 21-31 дні (днів) |
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DMT616MLSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DMT616MLSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
на замовлення 22418 шт: термін постачання 21-31 дні (днів) |
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DMT67M8LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMT67M8LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V |
на замовлення 6380 шт: термін постачання 21-31 дні (днів) |
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DMP65H20D0HSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 501V~650V SO-8 T&RPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DMP65H20D0HSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 501V~650V SO-8 T&RPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DMT15H053SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 150V 5.2A/15A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ADTA114EUAQ-13 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FX2000045 | Diodes Incorporated |
Description: CRYSTAL SURFACE MOUNTPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Mode: Fundamental Height - Seated (Max): 0.053" (1.35mm) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX553STZ | Diodes Incorporated |
Description: TRANS PNP 100V 1A E-LINEPackaging: Cut Tape (CT) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX553STZ | Diodes Incorporated |
Description: TRANS PNP 100V 1A E-LINEPackaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDZ12CQ-7 | Diodes Incorporated |
Description: DIODE ZENER 12.05V 470MW SOD123Tolerance: ±3% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12.05 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 470 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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DDZ12CQ-7 | Diodes Incorporated |
Description: DIODE ZENER 12.05V 470MW SOD123Tolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12.05 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 470 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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DDZX12CQ-7 | Diodes Incorporated |
Description: DIODE ZENER 12.05V 300MW SOT23 Tolerance: ±2.53% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12.05 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 231000 шт: термін постачання 21-31 дні (днів) |
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B340AX-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 3A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G07FS3-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN0808-4Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN0808-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G07FS3-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN0808-4Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN0808-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G07FW4-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN1010-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1010-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G07FW4-7 | Diodes Incorporated |
Description: IC BUFF 1.65V X2-DFN1010-6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1010-6 |
на замовлення 4890 шт: термін постачання 21-31 дні (днів) |
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74LVCE1G07FZ4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.4V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1410-6 |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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AP9101CAK-ATTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-25 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP9101CAK-ATTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT25Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-25 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PI6CB18200ZDIEX | Diodes Incorporated |
Description: IC CLK BUFFER 2:4 125MHZ 24TQFNPackaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Fanout Buffer (Distribution) Input: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.7V ~ 1.9V Ratio - Input:Output: 2:4 Differential - Input:Output: No/Yes Supplier Device Package: 24-TQFN (4x4) Frequency - Max: 125 MHz |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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PI6CB18200ZDIEX | Diodes Incorporated |
Description: IC CLK BUFFER 2:4 125MHZ 24TQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Fanout Buffer (Distribution) Input: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.7V ~ 1.9V Ratio - Input:Output: 2:4 Differential - Input:Output: No/Yes Supplier Device Package: 24-TQFN (4x4) Frequency - Max: 125 MHz |
на замовлення 6585 шт: термін постачання 21-31 дні (днів) |
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FK0350006 | Diodes Incorporated |
Description: XTAL OSC XO 3.579545MHZ CMOSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.045" (1.15mm) Frequency: 3.579545 MHz Base Resonator: Crystal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP7375Q-50W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 5V 350MA SOT-25Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 350mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 8 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: SOT-25 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit, Enable Grade: Automotive PSRR: 85dB (1kHz) Voltage Dropout (Max): 1.4V @ 300mA Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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AP7375Q-33FDCW-7 | Diodes Incorporated |
Description: IC REG LIN 3.3V 350MA 6DFN2020Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 350mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 8 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (SWP) (Type UXC) Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit, Enable Grade: Automotive PSRR: 85dB (1kHz) Voltage Dropout (Max): 1.4V @ 300mA Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 188324 шт: термін постачання 21-31 дні (днів) |
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| DMG3402LQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.28 грн |
| 13+ | 24.37 грн |
| 100+ | 15.54 грн |
| 500+ | 11.00 грн |
| 1000+ | 9.84 грн |
| 2000+ | 8.87 грн |
| 5000+ | 7.69 грн |
| FK2500060 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 52.25 грн |
| FK2500060 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 25.0000MHZ CMOS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 25 MHz
Base Resonator: Crystal
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.89 грн |
| 10+ | 71.17 грн |
| 25+ | 67.35 грн |
| 50+ | 60.60 грн |
| 100+ | 58.08 грн |
| 250+ | 54.93 грн |
| 500+ | 51.79 грн |
| 1000+ | 49.65 грн |
| SMAJ51AQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 51VWM 82.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 51VWM 82.4VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.12 грн |
| 10000+ | 6.27 грн |
| 15000+ | 5.97 грн |
| SMAJ51AQ-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 51VWM 82.4VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 51VWM 82.4VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.05 грн |
| 15+ | 21.00 грн |
| 100+ | 13.31 грн |
| 500+ | 9.39 грн |
| 1000+ | 8.39 грн |
| 2000+ | 7.55 грн |
| D5V0X1B2LPQ-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 14V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 14V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1180000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.14 грн |
| 20000+ | 2.03 грн |
| D5V0X1B2LPQ-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 14V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 14VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 14V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1184067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.91 грн |
| 28+ | 10.80 грн |
| 100+ | 4.96 грн |
| 500+ | 4.05 грн |
| 1000+ | 3.14 грн |
| 2000+ | 3.08 грн |
| 5000+ | 2.97 грн |
| ZLLS400QTC |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
на замовлення 2400000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 9.27 грн |
| 20000+ | 8.28 грн |
| 30000+ | 8.04 грн |
| ZLLS400QTC |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 520MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Current - Average Rectified (Io): 520mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
на замовлення 2404405 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.51 грн |
| 11+ | 28.42 грн |
| 100+ | 18.26 грн |
| 500+ | 13.03 грн |
| 1000+ | 11.71 грн |
| 2000+ | 10.59 грн |
| 5000+ | 9.23 грн |
| B560C |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7124 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.61 грн |
| 12+ | 26.10 грн |
| 100+ | 16.66 грн |
| 500+ | 11.83 грн |
| 1000+ | 10.59 грн |
| DXTN3C100PSQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Qualification: AEC-Q101
Description: TRANS NPN 100V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Qualification: AEC-Q101
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.75 грн |
| 10+ | 36.30 грн |
| 100+ | 23.56 грн |
| 500+ | 16.97 грн |
| 1000+ | 15.31 грн |
| DXTP3C60PSQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: AEC-Q101
Description: TRANS PNP 60V 3A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DXTP3C60PSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: AEC-Q101
Description: TRANS PNP 60V 3A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: AEC-Q101
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.75 грн |
| 10+ | 36.30 грн |
| 100+ | 23.59 грн |
| 500+ | 16.99 грн |
| 1000+ | 15.33 грн |
| DMNH6021SPSQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 20.37 грн |
| DMNH6021SPSQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 55A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4466 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.53 грн |
| 10+ | 47.77 грн |
| 100+ | 32.23 грн |
| 500+ | 23.50 грн |
| 1000+ | 21.33 грн |
| 1N4148WT-76K |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 3129 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.58 грн |
| 34+ | 9.00 грн |
| 100+ | 5.56 грн |
| 500+ | 3.82 грн |
| 1000+ | 3.36 грн |
| 2000+ | 2.97 грн |
| US2M_HF |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 1000V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.90 грн |
| 45+ | 6.67 грн |
| 52+ | 5.85 грн |
| 100+ | 4.67 грн |
| 250+ | 4.26 грн |
| 500+ | 4.02 грн |
| 1000+ | 3.76 грн |
| D20V0H1U2LP-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 20VWM 34V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 34V
Power - Peak Pulse: 340W
Power Line Protection: No
Description: TVS DIODE 20VWM 34V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22V
Voltage - Clamping (Max) @ Ipp: 34V
Power - Peak Pulse: 340W
Power Line Protection: No
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.40 грн |
| 20000+ | 2.31 грн |
| 30000+ | 2.03 грн |
| BC817-40FSWQ-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1412-3/SWP (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
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| SBR10U150CT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 150V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Description: DIODE ARRAY SBR 150V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 51.15 грн |
| D5V0Q1B2CSP-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 8.4V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 5.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 8.4V X2DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 5.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X2-DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| GC0350001 |
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Виробник: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
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| GC0350012 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 3.579545MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 150 Ohms
Frequency: 3.579545 MHz
Description: CRYSTAL 3.579545MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 150 Ohms
Frequency: 3.579545 MHz
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| GC0360007 |
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Виробник: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
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| GC0360021 |
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Виробник: Diodes Incorporated
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
Description: CRYSTAL METAL CAN 49S/SMD T&R 1K
Packaging: Tape & Reel (TR)
Type: MHz Crystal
Operating Mode: Fundamental
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од. на суму грн.
| DGD0211EWT-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 19.45 грн |
| 6000+ | 18.25 грн |
| DGD0211EWT-7 |
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Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Description: IC
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: TSOT-25
Rise / Fall Time (Typ): 17ns, 18ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 1.9A, 1.8A
на замовлення 8550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.83 грн |
| 11+ | 29.47 грн |
| 25+ | 26.40 грн |
| 100+ | 21.64 грн |
| 250+ | 20.14 грн |
| 500+ | 19.24 грн |
| 1000+ | 18.19 грн |
| BC817-25-7-F-W |
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Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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од. на суму грн.
| BC817-25-7-F-W |
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Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.13 грн |
| 31+ | 9.97 грн |
| 100+ | 6.18 грн |
| 500+ | 4.25 грн |
| 1000+ | 3.75 грн |
| BC807-25-7-F-W |
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Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.99 грн |
| 6000+ | 3.45 грн |
| 9000+ | 3.25 грн |
| 15000+ | 2.84 грн |
| 21000+ | 2.71 грн |
| 30000+ | 2.59 грн |
| BC807-25-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS PNP 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 32825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.47 грн |
| 27+ | 11.40 грн |
| 100+ | 7.09 грн |
| 500+ | 4.90 грн |
| 1000+ | 4.33 грн |
| 1N4148W-7-F-W |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1980000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.15 грн |
| 6000+ | 1.84 грн |
| 9000+ | 1.73 грн |
| 15000+ | 1.50 грн |
| 21000+ | 1.42 грн |
| 30000+ | 1.35 грн |
| 1N4148W-7-F-W |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1981574 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.90 грн |
| 47+ | 6.45 грн |
| 100+ | 3.98 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.37 грн |
| DMT616MLSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 11.58 грн |
| 5000+ | 9.44 грн |
| 7500+ | 9.08 грн |
| 12500+ | 8.21 грн |
| 17500+ | 8.04 грн |
| DMT616MLSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Description: MOSFET N-CH 60V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.39W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
на замовлення 22418 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.06 грн |
| 11+ | 28.95 грн |
| 100+ | 18.65 грн |
| 500+ | 13.28 грн |
| 1000+ | 11.93 грн |
| DMT67M8LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.64 грн |
| 5000+ | 20.35 грн |
| DMT67M8LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
на замовлення 6380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.67 грн |
| 10+ | 51.60 грн |
| 100+ | 34.09 грн |
| 500+ | 24.90 грн |
| 1000+ | 22.62 грн |
| DMP65H20D0HSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 23.68 грн |
| DMP65H20D0HSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET BVDSS: 501V~650V SO-8 T&R
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.81 грн |
| 10+ | 67.20 грн |
| 100+ | 44.34 грн |
| 500+ | 32.62 грн |
| 1000+ | 29.69 грн |
| 2000+ | 28.20 грн |
| DMT15H053SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 150V 5.2A/15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
Description: MOSFET N-CH 150V 5.2A/15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
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| ADTA114EUAQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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| FX2000045 |
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Виробник: Diodes Incorporated
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
Description: CRYSTAL SURFACE MOUNT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
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| ZTX553STZ |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 1A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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| ZTX553STZ |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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| DDZ12CQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 12.05V 470MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12.05V 470MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.34 грн |
| 6000+ | 2.19 грн |
| 9000+ | 2.12 грн |
| 15000+ | 1.96 грн |
| 21000+ | 1.67 грн |
| DDZ12CQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 12.05V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12.05V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.90 грн |
| 43+ | 7.05 грн |
| 100+ | 3.40 грн |
| 500+ | 3.14 грн |
| 1000+ | 3.08 грн |
| DDZX12CQ-7 |
Виробник: Diodes Incorporated
Description: DIODE ZENER 12.05V 300MW SOT23
Tolerance: ±2.53%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12.05V 300MW SOT23
Tolerance: ±2.53%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 231000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.20 грн |
| 6000+ | 2.76 грн |
| 9000+ | 2.60 грн |
| 15000+ | 2.27 грн |
| 21000+ | 2.16 грн |
| 30000+ | 2.06 грн |
| 75000+ | 1.82 грн |
| 150000+ | 1.68 грн |
| B340AX-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.14 грн |
| 22+ | 13.87 грн |
| 100+ | 8.69 грн |
| 500+ | 6.04 грн |
| 1000+ | 5.35 грн |
| 2000+ | 4.77 грн |
| 74LVC1G07FS3-7 |
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Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN0808-4
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN0808-4
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| 74LVC1G07FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN0808-4
Description: IC BUFF 1.65V X2-DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN0808-4
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| 74LVC1G07FW4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
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В кошику
од. на суму грн.
| 74LVC1G07FW4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
Description: IC BUFF 1.65V X2-DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1010-6
на замовлення 4890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.12 грн |
| 46+ | 6.60 грн |
| 52+ | 5.82 грн |
| 100+ | 4.63 грн |
| 250+ | 4.23 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.73 грн |
| 2500+ | 3.55 грн |
| 74LVCE1G07FZ4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1410-6
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.80 грн |
| 32+ | 9.37 грн |
| 37+ | 8.31 грн |
| 100+ | 6.66 грн |
| 250+ | 6.11 грн |
| 500+ | 5.78 грн |
| 1000+ | 5.42 грн |
| 2500+ | 5.25 грн |
| AP9101CAK-ATTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
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В кошику
од. на суму грн.
| AP9101CAK-ATTRG1 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
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В кошику
од. на суму грн.
| PI6CB18200ZDIEX |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 2:4 125MHZ 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
Frequency - Max: 125 MHz
Description: IC CLK BUFFER 2:4 125MHZ 24TQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
Frequency - Max: 125 MHz
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 90.34 грн |
| PI6CB18200ZDIEX |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 2:4 125MHZ 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
Frequency - Max: 125 MHz
Description: IC CLK BUFFER 2:4 125MHZ 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 2:4
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TQFN (4x4)
Frequency - Max: 125 MHz
на замовлення 6585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.23 грн |
| 10+ | 125.47 грн |
| 25+ | 114.68 грн |
| 100+ | 96.46 грн |
| 250+ | 91.13 грн |
| 500+ | 88.04 грн |
| FK0350006 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 3.579545MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 3.579545 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 3.579545MHZ CMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 3.579545 MHz
Base Resonator: Crystal
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В кошику
од. на суму грн.
| AP7375Q-50W5-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 350MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 350MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.36 грн |
| 20+ | 15.45 грн |
| 25+ | 13.71 грн |
| 100+ | 11.08 грн |
| 250+ | 10.24 грн |
| 500+ | 9.73 грн |
| 1000+ | 9.16 грн |
| AP7375Q-33FDCW-7 |
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Виробник: Diodes Incorporated
Description: IC REG LIN 3.3V 350MA 6DFN2020
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (SWP) (Type UXC)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 350MA 6DFN2020
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (SWP) (Type UXC)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit, Enable
Grade: Automotive
PSRR: 85dB (1kHz)
Voltage Dropout (Max): 1.4V @ 300mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 188324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.04 грн |
| 17+ | 18.52 грн |
| 25+ | 16.53 грн |
| 100+ | 13.41 грн |
| 250+ | 12.42 грн |
| 500+ | 11.82 грн |
| 1000+ | 11.14 грн |
























