Продукція > DIOTEC SEMICONDUCTOR > Всі товари виробника DIOTEC SEMICONDUCTOR (30607) > Сторінка 94 з 511
| Фото | Назва | Виробник | Інформація |
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| PT800A | Diotec Semiconductor |
Description: DIODE GEN PURP 50V 8A TO220ACPackaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P4SMAJ6.5 | Diotec Semiconductor |
Description: TVS DIODE 6.5VWM 12.3V DO214ACPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32.5A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.2V Voltage - Clamping (Max) @ Ipp: 12.3V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4SMAJ6.5C | Diotec Semiconductor |
Description: TVS DIODE 6.5VWM 12.3V DO214ACPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32.5A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.2V Voltage - Clamping (Max) @ Ipp: 12.3V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DI78L12DAB | Diotec Semiconductor |
Description: VR SO-8 35V 11.5V 12.5VPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6.5 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: 8-SO Voltage - Output (Min/Fixed): 12V PSRR: 42dB (120Hz) Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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S5Y | Diotec Semiconductor |
Description: DIODE STANDARD 2000V 5A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 2000 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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S5Y | Diotec Semiconductor |
Description: DIODE STANDARD 2000V 5A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 2000 V |
на замовлення 8753 шт: термін постачання 21-31 дні (днів) |
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MM5Z33 | Diotec Semiconductor |
Description: ZENER SOD-523 33V 0.3W 5%Tolerance: ±5% Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-523 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 23.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DI050P03PT | Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 P -30VPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DI050P03PT-AQ | Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 P -30VPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES2C | Diotec Semiconductor |
Description: DIODE GEN PURP 150V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SB320 | Diotec Semiconductor |
Description: DIODE SCHOTTKY 20V 3A DO201Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
на замовлення 1662 шт: термін постачання 21-31 дні (днів) |
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SB320 | Diotec Semiconductor |
Description: DIODE SCHOTTKY 20V 3A DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZMY22R7 | Diotec Semiconductor |
Description: ZENERDIODE,MELF,22V,1.3W,5%Tolerance: ±5% Packaging: Strip Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-213AB (MELF) Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 1 µA @ 12 V |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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30CTQ035S | Diotec Semiconductor |
Description: DIODE ARR SCHOTT 35V 15A TO263ABPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BY397 | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A DO201Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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BY397 | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BY396 | Diotec Semiconductor |
Description: DIODE STANDARD 100V 3A DO201Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 1674 шт: термін постачання 21-31 дні (днів) |
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BY396 | Diotec Semiconductor |
Description: DIODE STANDARD 100V 3A DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMCJ26A-AQ | Diotec Semiconductor |
Description: TVS DIODE 26VWM 42.1VC DO214ABPackaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.6A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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3.0SMCJ26A | Diotec Semiconductor |
Description: TVS DIODE 26VWM 42.1VC DO214ABPackaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71.2A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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3.0SMCJ26A-AQ | Diotec Semiconductor |
Description: TVS DIODE 26VWM 42.1VC DO214ABPackaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 71.2A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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5.0SMCJ26A-AQ | Diotec Semiconductor |
Description: TVS DIODE 26VWM 42.1VC DO214ABPackaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 118.8A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DIJ2A3N65 | Diotec Semiconductor |
Description: MOSFET ITO-220AB N 650V 2.3APackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMBJ54CA | Diotec Semiconductor |
Description: TVS DIODE 54VWM 87.1VC DO-214AAPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.9A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMBJ54CA-AQ | Diotec Semiconductor |
Description: TVS DIODE 54VWM 87.1VC DO-214AAPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 6.9A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZMM5.6R13 | Diotec Semiconductor |
Description: ZENER SOD-80 5.6V 0.5W 5%Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-80C Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DI028N10PQ2-AQ | Diotec Semiconductor |
Description: MOSFET 2N-CH 100V 28A 8TDSONPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32.7W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SK315SMA-AQ | Diotec Semiconductor |
Description: DIODE SCHOTTKY 150V 3A SMAPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52C13 | Diotec Semiconductor |
Description: DIODE ZENER 13V 500MW SOD123FTolerance: ±5% Packaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
на замовлення 2105 шт: термін постачання 21-31 дні (днів) |
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S8J | Diotec Semiconductor |
Description: DIODE GEN PURP 600V 8A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2750 шт: термін постачання 21-31 дні (днів) |
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S8J | Diotec Semiconductor |
Description: DIODE GEN PURP 600V 8A SMCPackaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EGL1D | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 1A DO213AAPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AA (MINIMELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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EGL1D | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 1A DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AA (MINIMELF) Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 2543 шт: термін постачання 21-31 дні (днів) |
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US3D | Diotec Semiconductor |
Description: DIODE STANDARD 200V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 994 шт: термін постачання 21-31 дні (днів) |
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US3D | Diotec Semiconductor |
Description: DIODE STANDARD 200V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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Z1SMA51 | Diotec Semiconductor |
Description: ZENER SMA 51V 1.5W 5%Tolerance: ±5% Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 51 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 38 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DB25-10 | Diotec Semiconductor |
Description: BRIDGE RECT 3PHASE 1KV 35A DB-35Packaging: Box Package / Case: 5-Square, DB-35 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB-35 Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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DB25-01 | Diotec Semiconductor |
Description: BRIDGE RECT 3P 100V 35A DB-35Packaging: Box Package / Case: 5-Square, DB-35 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB-35 Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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DB25-14 | Diotec Semiconductor |
Description: BRIDGE RECT 3P 1.4KV 35A DB-35Packaging: Box Package / Case: 5-Square, DB-35 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB-35 Voltage - Peak Reverse (Max): 1.4 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1400 V |
на замовлення 700 шт: термін постачання 21-31 дні (днів) |
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DB35-02 | Diotec Semiconductor |
Description: BRIDGE RECT 3P 200V 35A DB-35Packaging: Box Package / Case: 5-Square, DB-35 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB-35 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MMFTP3008AK | Diotec Semiconductor |
Description: MOSFET SOT-23 P -30V -0.23APackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMFTP3160 | Diotec Semiconductor |
Description: MOSFET SOT-23 P -30V -2APackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMFTP3160-AQ | Diotec Semiconductor |
Description: MOSFET SOT-23 P -30V -2.6APackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMFTP6341KW | Diotec Semiconductor |
Description: MOSFET SOT-363 P -30V -5APackaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-363 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2CL72A | Diotec Semiconductor |
Description: DIODE STANDARD 10000V 5MA AXIALPackaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 5mA Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 120°C Voltage - DC Reverse (Vr) (Max): 10000 V Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 10000 V |
на замовлення 4070 шт: термін постачання 21-31 дні (днів) |
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2CL72A | Diotec Semiconductor |
Description: DIODE STANDARD 10000V 5MA AXIALPackaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 5mA Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 120°C Voltage - DC Reverse (Vr) (Max): 10000 V Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 10000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SB520 | Diotec Semiconductor |
Description: DIODE SCHOTTKY 20V 5A DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC846PN-AQ | Diotec Semiconductor |
Description: TRANS NPN/PNP 65V 100MA SOT-363Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C7V5 | Diotec Semiconductor |
Description: DIODE ZENER 7.5V 300MW SOT23Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 300 mW Current - Reverse Leakage @ Vr: 1 µA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C7V5 | Diotec Semiconductor |
Description: DIODE ZENER 7.5V 300MW SOT23Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 300 mW Current - Reverse Leakage @ Vr: 1 µA @ 5 V |
на замовлення 752 шт: термін постачання 21-31 дні (днів) |
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3991.31.2 | Diotec Semiconductor |
Description: EVAL BOARD FOR DI280N10TLPackaging: Box Function: MOSFET Type: Power Management Contents: Board(s) Utilized IC / Part: DI280N10TL Secondary Attributes: On-Board Test Points Embedded: No |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BC817K-40 | Diotec Semiconductor |
Description: TRANS NPN 45V 0.5A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BC817K-40 | Diotec Semiconductor |
Description: TRANS NPN 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 5789 шт: термін постачання 21-31 дні (днів) |
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BCR22PN-AQ | Diotec Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 170MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DIW050F065 | Diotec Semiconductor |
Description: IGBT, TO-247-3L, 650V, 50A, 300APackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 38 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/125ns Switching Energy: 3mJ (on), 1.1mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 78 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 350 W |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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5KP16A | Diotec Semiconductor |
Description: TVS DIODE 16VWM 26VC P-600Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -50°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 192A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: P-600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4SMAJ120A | Diotec Semiconductor |
Description: TVS DIODE 120VWM 193VC DO-214ACPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.1A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU12D | Diotec Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 8.4A GBUPackaging: Box Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 8.4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
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GBU12K | Diotec Semiconductor |
Description: BRIDGE RECT 1PHASE 8.4A 800V GBUPackaging: Box Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8.4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 988 шт: термін постачання 21-31 дні (днів) |
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GBU12J | Diotec Semiconductor |
Description: BRIDGE 1-PH GBU 600V 12A 150DEGPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8.4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 999 шт: термін постачання 21-31 дні (днів) |
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| PT800A |
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Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| P4SMAJ6.5 |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 6.5VWM 12.3V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.5A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 12.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 6.5VWM 12.3V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.5A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 12.3V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| P4SMAJ6.5C |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 6.5VWM 12.3V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.5A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 12.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 6.5VWM 12.3V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.5A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 12.3V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DI78L12DAB |
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Виробник: Diotec Semiconductor
Description: VR SO-8 35V 11.5V 12.5V
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: 8-SO
Voltage - Output (Min/Fixed): 12V
PSRR: 42dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Description: VR SO-8 35V 11.5V 12.5V
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: 8-SO
Voltage - Output (Min/Fixed): 12V
PSRR: 42dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
товару немає в наявності
В кошику
од. на суму грн.
| S5Y |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 2000V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 2000 V
Description: DIODE STANDARD 2000V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 2000 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.94 грн |
| 6000+ | 19.27 грн |
| S5Y |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 2000V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 2000 V
Description: DIODE STANDARD 2000V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 2000 V
на замовлення 8753 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.75 грн |
| 10+ | 58.47 грн |
| 100+ | 37.63 грн |
| 500+ | 27.17 грн |
| 1000+ | 25.97 грн |
| MM5Z33 |
![]() |
Виробник: Diotec Semiconductor
Description: ZENER SOD-523 33V 0.3W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.2 V
Description: ZENER SOD-523 33V 0.3W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.2 V
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| DI050P03PT |
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Виробник: Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 P -30V
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V
Description: MOSFET POWERQFN 3X3 P -30V
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V
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| DI050P03PT-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 P -30V
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET POWERQFN 3X3 P -30V
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V
Qualification: AEC-Q101
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| ES2C |
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Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 150V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 750+ | 52.32 грн |
| 1500+ | 28.01 грн |
| 3000+ | 16.48 грн |
| 6000+ | 15.32 грн |
| SB320 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 20V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
на замовлення 1662 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.99 грн |
| 14+ | 23.78 грн |
| 100+ | 16.97 грн |
| 500+ | 12.41 грн |
| SB320 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 20V 3A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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| ZMY22R7 |
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Виробник: Diotec Semiconductor
Description: ZENERDIODE,MELF,22V,1.3W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Description: ZENERDIODE,MELF,22V,1.3W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 350+ | 48.26 грн |
| 700+ | 27.02 грн |
| 1750+ | 12.32 грн |
| 3500+ | 8.42 грн |
| 30CTQ035S |
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Виробник: Diotec Semiconductor
Description: DIODE ARR SCHOTT 35V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 35 V
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| BY397 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.40 грн |
| 21+ | 15.91 грн |
| 25+ | 13.19 грн |
| 100+ | 9.36 грн |
| 250+ | 7.87 грн |
| 500+ | 6.95 грн |
| BY397 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| BY396 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE STANDARD 100V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 1674 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.25 грн |
| 19+ | 18.04 грн |
| 100+ | 11.60 грн |
| 500+ | 10.09 грн |
| BY396 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE STANDARD 100V 3A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 3A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| 1.5SMCJ26A-AQ |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 3.0SMCJ26A |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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| 3.0SMCJ26A-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 5.0SMCJ26A-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 118.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 118.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| DIJ2A3N65 |
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Виробник: Diotec Semiconductor
Description: MOSFET ITO-220AB N 650V 2.3A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET ITO-220AB N 650V 2.3A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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| P6SMBJ54CA |
![]() |
Виробник: Diotec Semiconductor
Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
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| P6SMBJ54CA-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 54VWM 87.1VC DO-214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| ZMM5.6R13 |
![]() |
Виробник: Diotec Semiconductor
Description: ZENER SOD-80 5.6V 0.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: ZENER SOD-80 5.6V 0.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80C
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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| DI028N10PQ2-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: MOSFET 2N-CH 100V 28A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32.7W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 28A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32.7W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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| SK315SMA-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 150V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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| BZT52C13 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 13V 500MW SOD123F
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
на замовлення 2105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 11.07 грн |
| 61+ | 5.41 грн |
| 100+ | 3.40 грн |
| 500+ | 2.79 грн |
| 1000+ | 2.26 грн |
| S8J |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 600V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 8A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.57 грн |
| 10+ | 38.13 грн |
| 25+ | 31.52 грн |
| 100+ | 22.51 грн |
| 250+ | 19.05 грн |
| 500+ | 16.91 грн |
| 1000+ | 14.88 грн |
| S8J |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 600V 8A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 8A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| EGL1D |
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Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 4.88 грн |
| EGL1D |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2543 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 16.18 грн |
| 32+ | 10.41 грн |
| 100+ | 6.95 грн |
| 500+ | 4.99 грн |
| 1000+ | 4.47 грн |
| US3D |
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Виробник: Diotec Semiconductor
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.77 грн |
| 14+ | 23.78 грн |
| 100+ | 17.04 грн |
| 500+ | 12.09 грн |
| US3D |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| Z1SMA51 |
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Виробник: Diotec Semiconductor
Description: ZENER SMA 51V 1.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 38 V
Description: ZENER SMA 51V 1.5W 5%
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 38 V
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| DB25-10 |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 3PHASE 1KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 3PHASE 1KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1932.28 грн |
| 20+ | 945.65 грн |
| 50+ | 395.46 грн |
| 100+ | 282.49 грн |
| DB25-01 |
![]() |
Виробник: Diotec Semiconductor
Description: BRIDGE RECT 3P 100V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 3P 100V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1932.28 грн |
| 20+ | 945.65 грн |
| 50+ | 395.46 грн |
| 100+ | 282.49 грн |
| DB25-14 |
![]() |
Виробник: Diotec Semiconductor
Description: BRIDGE RECT 3P 1.4KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Description: BRIDGE RECT 3P 1.4KV 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 2067.43 грн |
| 20+ | 1012.85 грн |
| 50+ | 424.81 грн |
| 100+ | 310.03 грн |
| DB35-02 |
![]() |
Виробник: Diotec Semiconductor
Description: BRIDGE RECT 3P 200V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 3P 200V 35A DB-35
Packaging: Box
Package / Case: 5-Square, DB-35
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-35
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1932.28 грн |
| 20+ | 945.65 грн |
| 50+ | 395.46 грн |
| MMFTP3008AK |
![]() |
Виробник: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -0.23A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Description: MOSFET SOT-23 P -30V -0.23A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
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| MMFTP3160 |
![]() |
Виробник: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Description: MOSFET SOT-23 P -30V -2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
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| MMFTP3160-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2.6A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET SOT-23 P -30V -2.6A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Qualification: AEC-Q101
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| MMFTP6341KW |
![]() |
Виробник: Diotec Semiconductor
Description: MOSFET SOT-363 P -30V -5A
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Description: MOSFET SOT-363 P -30V -5A
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
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| 2CL72A |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
на замовлення 4070 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.77 грн |
| 19+ | 17.30 грн |
| 100+ | 13.56 грн |
| 500+ | 9.54 грн |
| 1000+ | 8.23 грн |
| 2000+ | 7.65 грн |
| 2CL72A |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
Description: DIODE STANDARD 10000V 5MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 5mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 120°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 45 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10000 V
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| SB520 |
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Виробник: Diotec Semiconductor
Description: DIODE SCHOTTKY 20V 5A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 5A DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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| BC846PN-AQ |
![]() |
Виробник: Diotec Semiconductor
Description: TRANS NPN/PNP 65V 100MA SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 65V 100MA SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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| BZX84C7V5 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
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| BZX84C7V5 |
![]() |
Виробник: Diotec Semiconductor
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
на замовлення 752 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 11.07 грн |
| 52+ | 6.40 грн |
| 100+ | 3.91 грн |
| 500+ | 2.69 грн |
| 3991.31.2 |
![]() |
Виробник: Diotec Semiconductor
Description: EVAL BOARD FOR DI280N10TL
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: DI280N10TL
Secondary Attributes: On-Board Test Points
Embedded: No
Description: EVAL BOARD FOR DI280N10TL
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: DI280N10TL
Secondary Attributes: On-Board Test Points
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14879.99 грн |
| BC817K-40 |
![]() |
Виробник: Diotec Semiconductor
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.49 грн |
| BC817K-40 |
![]() |
Виробник: Diotec Semiconductor
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 5789 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.77 грн |
| 44+ | 7.46 грн |
| 100+ | 4.58 грн |
| 500+ | 3.12 грн |
| 1000+ | 2.74 грн |
| BCR22PN-AQ |
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Виробник: Diotec Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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| DIW050F065 |
![]() |
Виробник: Diotec Semiconductor
Description: IGBT, TO-247-3L, 650V, 50A, 300A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 350 W
Description: IGBT, TO-247-3L, 650V, 50A, 300A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/125ns
Switching Energy: 3mJ (on), 1.1mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 350 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 288.69 грн |
| 30+ | 164.04 грн |
| 120+ | 137.39 грн |
| 5KP16A |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 16VWM 26VC P-600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 192A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: P-600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 16VWM 26VC P-600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 192A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: P-600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| P4SMAJ120A |
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Виробник: Diotec Semiconductor
Description: TVS DIODE 120VWM 193VC DO-214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 120VWM 193VC DO-214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| GBU12D |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8.4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 8.4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.09 грн |
| 10+ | 125.63 грн |
| 100+ | 85.15 грн |
| 500+ | 64.02 грн |
| GBU12K |
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Виробник: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 8.4A 800V GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 8.4A 800V GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.62 грн |
| 10+ | 110.22 грн |
| 100+ | 78.48 грн |
| 500+ | 60.44 грн |
| GBU12J |
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Виробник: Diotec Semiconductor
Description: BRIDGE 1-PH GBU 600V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE 1-PH GBU 600V 12A 150DEG
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.05 грн |
| 10+ | 132.11 грн |
| 25+ | 113.14 грн |
| 100+ | 86.08 грн |
| 250+ | 76.29 грн |
| 500+ | 70.31 грн |






























