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Ціна
MBR7535R GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY REV 35V DO5
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MBR7540 GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY 40V 75A DO5
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MBR7540R GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY REV 40V DO5
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MBR7545R GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY REV 45V DO5
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MBR7560 GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY 60V 75A DO5
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MBR7560R GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY REV 60V DO5
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MBR7580 GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY 80V 75A DO5
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MBR7580R GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY REV 80V DO5
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MBR80100 GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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MBR80100R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR8020 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8020R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8030 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8030R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8035 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8035R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8040 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товару немає в наявності
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MBR8040R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товару немає в наявності
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MBR8045R MBR8045R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+1962.73 грн
10+1597.03 грн
25+1493.47 грн
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MBR8060 GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
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MBR8060R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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MBR8080 GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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MBR8080R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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MBRF40035 MBRF40035 GeneSiC Semiconductor Description: DIODE MODULE 35V 400A TO244AB
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MBRF40035R MBRF40035R GeneSiC Semiconductor Description: DIODE MODULE 35V 400A TO244AB
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MBRH120100 MBRH120100 GeneSiC Semiconductor mbrh120100.pdf Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH120100R MBRH120100R GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY REV 100V 120A D67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH12020 MBRH12020 GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH12020R MBRH12020R GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY REV 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12030 MBRH12030 GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH12030R MBRH12030R GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY REV 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12035 MBRH12035 GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH12035R MBRH12035R GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY REV 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12045 MBRH12045 GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY 45V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12045R MBRH12045R GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY REV 45V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MBRH12060 MBRH12060 GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH12060R MBRH12060R GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY REV 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12080 MBRH12080 GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH12080R MBRH12080R GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY REV 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH200100 MBRH200100 GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY 100V 200A D-67
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MBRH200100R MBRH200100R GeneSiC Semiconductor mbrh12045.pdf Description: DIODE SCHOTTKY 100V 200A D-67
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MBRH20020 MBRH20020 GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY 20V 200A D-67
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MBRH20020R MBRH20020R GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY 20V 200A D-67
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MBRH20030 MBRH20030 GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY 30V 200A D-67
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MBRH20030R MBRH20030R GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY 30V 200A D-67
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MBRH20035 MBRH20035 GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY 35V 200A D-67
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MBRH20035R MBRH20035R GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY 35V 200A D-67
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MBRH20040 MBRH20040 GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBRH20040R MBRH20040R GeneSiC Semiconductor mbrh20020.pdf Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBRH20060 MBRH20060 GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY 60V 200A D-67
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MBRH20060R MBRH20060R GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY 60V 200A D-67
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MBRH20080 MBRH20080 GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY 80V 200A D-67
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MBRH20080R MBRH20080R GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY 80V 200A D-67
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MBRT120100 MBRT120100 GeneSiC Semiconductor mbrt120100.pdf Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT120100R MBRT120100R GeneSiC Semiconductor mbrt120100.pdf Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12020 MBRT12020 GeneSiC Semiconductor mbrt12020.pdf Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12020R MBRT12020R GeneSiC Semiconductor mbrt12020.pdf Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12030 MBRT12030 GeneSiC Semiconductor mbrt12020.pdf Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12030R MBRT12030R GeneSiC Semiconductor mbrt12020.pdf Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
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MBRT12035 MBRT12035 GeneSiC Semiconductor mbrt12020.pdf Description: DIODE MOD SCHOTT 35V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR7535R mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V DO5
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MBR7540 mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 75A DO5
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MBR7540R mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V DO5
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MBR7545R mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V DO5
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MBR7560 mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 75A DO5
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MBR7560R mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V DO5
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MBR7580 mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 75A DO5
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MBR7580R mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V DO5
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MBR80100 mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товару немає в наявності
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MBR80100R mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
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MBR8020 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8020R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8030 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8030R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8035 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товару немає в наявності
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MBR8035R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8040 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8040R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8045R mbr80100.pdf
MBR8045R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1962.73 грн
10+1597.03 грн
25+1493.47 грн
В кошику  од. на суму  грн.
MBR8060 mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
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MBR8060R mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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MBR8080 mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
товару немає в наявності
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MBR8080R mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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MBRF40035
MBRF40035
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
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MBRF40035R
MBRF40035R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
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MBRH120100 mbrh120100.pdf
MBRH120100
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH120100R mbrh120100r.pdf
MBRH120100R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 120A D67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12020 mbrh12020r.pdf
MBRH12020
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
товару немає в наявності
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MBRH12020R mbrh12020r.pdf
MBRH12020R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12030 mbrh12020r.pdf
MBRH12030
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12030R mbrh12020r.pdf
MBRH12030R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12035 mbrh12020r.pdf
MBRH12035
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12035R mbrh12020r.pdf
MBRH12035R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12045 mbrh12045.pdf
MBRH12045
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12045R mbrh12045.pdf
MBRH12045R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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MBRH12060 mbrh12045.pdf
MBRH12060
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12060R mbrh12045.pdf
MBRH12060R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12080 mbrh12045.pdf
MBRH12080
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12080R mbrh12045.pdf
MBRH12080R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH200100 mbrh12045.pdf
MBRH200100
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 200A D-67
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MBRH200100R mbrh12045.pdf
MBRH200100R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 200A D-67
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MBRH20020 mbrh20020.pdf
MBRH20020
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A D-67
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MBRH20020R mbrh20020.pdf
MBRH20020R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 200A D-67
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MBRH20030 mbrh20020.pdf
MBRH20030
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A D-67
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MBRH20030R mbrh20020.pdf
MBRH20030R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 200A D-67
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В кошику  од. на суму  грн.
MBRH20035 mbrh20020.pdf
MBRH20035
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A D-67
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MBRH20035R mbrh20020.pdf
MBRH20035R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 200A D-67
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В кошику  од. на суму  грн.
MBRH20040 mbrh20020.pdf
MBRH20040
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBRH20040R mbrh20020.pdf
MBRH20040R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 200A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 200A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBRH20060 mbrh120100r.pdf
MBRH20060
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 200A D-67
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MBRH20060R mbrh120100r.pdf
MBRH20060R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 200A D-67
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MBRH20080 mbrh120100r.pdf
MBRH20080
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 200A D-67
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MBRH20080R mbrh120100r.pdf
MBRH20080R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 200A D-67
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MBRT120100 mbrt120100.pdf
MBRT120100
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT120100R mbrt120100.pdf
MBRT120100R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12020 mbrt12020.pdf
MBRT12020
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12020R mbrt12020.pdf
MBRT12020R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12030 mbrt12020.pdf
MBRT12030
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBRT12030R mbrt12020.pdf
MBRT12030R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
MBRT12035 mbrt12020.pdf
MBRT12035
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
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