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MBR60035CTR MBR60035CTR GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MODULE 35V 300A 2TOWER
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MBR60045CT MBR60045CT GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60045CTR MBR60045CTR GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60060CT MBR60060CT GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 60V 300A 2TOWER
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MBR60060CTR MBR60060CTR GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 60V 300A 2TOWER
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MBR60080CT MBR60080CT GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 80V 300A 2TOWER
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MBR60080CTR MBR60080CTR GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 80V 300A 2TOWER
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MBR60100 GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR60100R GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6020 GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6020R GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY REV 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6030 GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6030R GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY REV 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6035R GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY REV 35V DO5
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MBR6040 GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY 40V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6040R GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY REV 40V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6045R GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6060 GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6060R GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6080 GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6080R GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY REV 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR75100 GeneSiC Semiconductor mbr75100.pdf Description: DIODE SCHOTTKY 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR75100R GeneSiC Semiconductor mbr75100.pdf Description: DIODE SCHOTTKY REV 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR7520 GeneSiC Semiconductor mbr7520_thru_mbr7540r.pdf Description: DIODE SCHOTTKY 20V 75A DO5
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MBR7520R GeneSiC Semiconductor mbr7520_thru_mbr7540r.pdf Description: DIODE SCHOTTKY REV 20V DO5
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MBR7530 GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY 30V 75A DO5
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MBR7530R GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY REV 30V DO5
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MBR7535R GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY REV 35V DO5
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MBR7540 GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY 40V 75A DO5
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MBR7540R GeneSiC Semiconductor mbr7520.pdf Description: DIODE SCHOTTKY REV 40V DO5
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MBR7545R GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY REV 45V DO5
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MBR7560 GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY 60V 75A DO5
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MBR7560R GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY REV 60V DO5
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MBR7580 GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY 80V 75A DO5
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MBR7580R GeneSiC Semiconductor mbr7545_thru_mbr75100r.pdf Description: DIODE SCHOTTKY REV 80V DO5
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MBR80100 GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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MBR80100R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR8020 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8020R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8030 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8030R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8035 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8035R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8040 GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8040R GeneSiC Semiconductor mbr8020.pdf Description: DIODE SCHOTTKY REV 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8045R MBR8045R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+1900.39 грн
10+1546.31 грн
25+1446.04 грн
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MBR8060 GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR8060R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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MBR8080 GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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MBR8080R GeneSiC Semiconductor mbr80100.pdf Description: DIODE SCHOTTKY REV 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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MBRF40035 MBRF40035 GeneSiC Semiconductor Description: DIODE MODULE 35V 400A TO244AB
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MBRF40035R MBRF40035R GeneSiC Semiconductor Description: DIODE MODULE 35V 400A TO244AB
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MBRH120100 MBRH120100 GeneSiC Semiconductor mbrh120100.pdf Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH120100R MBRH120100R GeneSiC Semiconductor mbrh120100r.pdf Description: DIODE SCHOTTKY REV 100V 120A D67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12020 MBRH12020 GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12020R MBRH12020R GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY REV 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12030 MBRH12030 GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12030R MBRH12030R GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY REV 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12035 MBRH12035 GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12035R MBRH12035R GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY REV 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBR60035CTR mbr60020ctr.pdf
MBR60035CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 2TOWER
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MBR60045CT mbr600100ct.pdf
MBR60045CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60045CTR mbr600100ct.pdf
MBR60045CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60060CT mbr600100ct.pdf
MBR60060CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
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MBR60060CTR mbr600100ct.pdf
MBR60060CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
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MBR60080CT mbr600100ct.pdf
MBR60080CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
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MBR60080CTR mbr600100ct.pdf
MBR60080CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
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MBR60100 mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR60100R mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6020 mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6020R mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6030 mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6030R mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6035R mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V DO5
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MBR6040 mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6040R mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6045R mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6060 mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6060R mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6080 mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR6080R mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR75100 mbr75100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR75100R mbr75100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 75 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR7520 mbr7520_thru_mbr7540r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 75A DO5
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MBR7520R mbr7520_thru_mbr7540r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V DO5
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MBR7530 mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 75A DO5
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MBR7530R mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V DO5
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MBR7535R mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V DO5
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MBR7540 mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 75A DO5
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MBR7540R mbr7520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V DO5
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MBR7545R mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V DO5
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MBR7560 mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 75A DO5
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MBR7560R mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V DO5
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MBR7580 mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 75A DO5
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MBR7580R mbr7545_thru_mbr75100r.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V DO5
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MBR80100 mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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MBR80100R mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR8020 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8020R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR8030 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8030R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR8035 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8035R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8040 mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8040R mbr8020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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MBR8045R mbr80100.pdf
MBR8045R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1900.39 грн
10+1546.31 грн
25+1446.04 грн
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MBR8060 mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR8060R mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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MBR8080 mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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MBR8080R mbr80100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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MBRF40035
MBRF40035
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
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MBRF40035R
MBRF40035R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A TO244AB
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MBRH120100 mbrh120100.pdf
MBRH120100
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH120100R mbrh120100r.pdf
MBRH120100R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 120A D67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12020 mbrh12020r.pdf
MBRH12020
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12020R mbrh12020r.pdf
MBRH12020R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12030 mbrh12020r.pdf
MBRH12030
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12030R mbrh12020r.pdf
MBRH12030R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12035 mbrh12020r.pdf
MBRH12035
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12035R mbrh12020r.pdf
MBRH12035R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 120A D-67
Packaging: Bulk
Package / Case: D-67
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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