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FR30G02 FR30G02 GeneSiC Semiconductor fr30a02.pdf Description: DIODE STANDARD 400V 30A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1059.87 грн
В кошику  од. на суму  грн.
FR30GR02 FR30GR02 GeneSiC Semiconductor fr30a02.pdf Description: DIODE GEN PURP REV 400V 30A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)
1+1124.31 грн
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FR40G02 FR40G02 GeneSiC Semiconductor fr40b02.pdf Description: DIODE STANDARD 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
1+1269.70 грн
10+1032.95 грн
25+965.86 грн
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MBR12035 CTR MBR12035 CTR GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
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FR40GR02 FR40GR02 GeneSiC Semiconductor fr40b02.pdf Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товару немає в наявності
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MBR12040CT MBR12040CT GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBR12040CTR MBR12040CTR GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBRT20035R MBRT20035R GeneSiC Semiconductor mbrt20020.pdf Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
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1N3889 1N3889 GeneSiC Semiconductor 1n3889.pdf Description: DIODE GEN PURP 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
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MBRT20040R MBRT20040R GeneSiC Semiconductor mbrt20020.pdf Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR12060CT MBR12060CT GeneSiC Semiconductor mbr120100ct.pdf Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
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MBR400100CTR MBR400100CTR GeneSiC Semiconductor mbr400100ct.pdf Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
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1N2130AR 1N2130AR GeneSiC Semiconductor 1n2128a.pdf Description: DIODE STANDARD REV 150V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 1016 шт:
термін постачання 21-31 дні (днів)
1+831.05 грн
10+661.53 грн
25+613.14 грн
100+512.96 грн
250+475.42 грн
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S300YR S300YR GeneSiC Semiconductor s300y.pdf Description: DIODE STD REV 1600V 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
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MBRT30040R MBRT30040R GeneSiC Semiconductor mbrt30020.pdf Description: DIODE MOD SCHOTT 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+8473.21 грн
В кошику  од. на суму  грн.
MBRH12040 MBRH12040 GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY 40V 120A
Packaging: Bulk
Package / Case: D-67
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12040R MBRH12040R GeneSiC Semiconductor mbrh12020r.pdf Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
1+4619.50 грн
10+3806.76 грн
25+3578.10 грн
В кошику  од. на суму  грн.
1N1188R 1N1188R GeneSiC Semiconductor 1n1188.pdf Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
1+836.00 грн
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1N1190 1N1190 GeneSiC Semiconductor 1n1188.pdf Description: DIODE GEN PURP 600V 35A DO5
товару немає в наявності
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1N1199AR 1N1199AR GeneSiC Semiconductor 1n1199a.pdf Description: DIODE STANDARD REV 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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FR70G02 FR70G02 GeneSiC Semiconductor fr70b02.pdf Description: DIODE STANDARD 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товару немає в наявності
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MBRT20035 MBRT20035 GeneSiC Semiconductor mbrt20020.pdf Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
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FR70GR02 FR70GR02 GeneSiC Semiconductor fr70b02.pdf Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
1+1762.05 грн
10+1414.95 грн
25+1414.83 грн
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MUR7020 MUR7020 GeneSiC Semiconductor mur7005_thru_mur7020r.pdf Description: DIODE GEN PURP 200V 70A DO5
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MBR12045CT MBR12045CT GeneSiC Semiconductor mbr120100ct.pdf Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
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MBRT20040 MBRT20040 GeneSiC Semiconductor mbrt20020.pdf Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+7905.68 грн
10+6677.30 грн
25+6337.89 грн
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FR85G02 FR85G02 GeneSiC Semiconductor fr85b02.pdf Description: DIODE GEN PURP 400V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
1+2031.36 грн
10+1656.70 грн
25+1550.70 грн
100+1316.70 грн
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MBR12045CTR MBR12045CTR GeneSiC Semiconductor mbr120100ct.pdf Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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FR85GR02 FR85GR02 GeneSiC Semiconductor fr85b02.pdf Description: DIODE GEN PURP REV 400V 85A DO5
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MBR400100CT MBR400100CT GeneSiC Semiconductor mbr400100ct.pdf Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
1+7296.03 грн
10+6162.22 грн
25+5848.98 грн
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FST16035 FST16035 GeneSiC Semiconductor fst16020.pdf Description: DIODE MOD SCHOT 35V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+6303.89 грн
10+5254.40 грн
25+4961.08 грн
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1N3889R 1N3889R GeneSiC Semiconductor 1n3889.pdf Description: DIODE STANDARD REV 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
1+679.87 грн
10+531.39 грн
25+489.17 грн
100+404.91 грн
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MBRT30035 MBRT30035 GeneSiC Semiconductor mbrt30020.pdf Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8473.21 грн
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MBR12060CTR MBR12060CTR GeneSiC Semiconductor mbr120100ct.pdf Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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S300Y S300Y GeneSiC Semiconductor s300y.pdf Description: DIODE STANDARD 1600V 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MBRT30035R MBRT30035R GeneSiC Semiconductor mbrt30020.pdf Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+8473.21 грн
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1N1184 1N1184 GeneSiC Semiconductor 1n1183.pdf Description: DIODE STANDARD 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)
1+770.74 грн
10+620.49 грн
25+577.62 грн
100+486.57 грн
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1N3892R 1N3892R GeneSiC Semiconductor 1n3889.pdf Description: DIODE GEN PURP REV 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 192 шт:
термін постачання 21-31 дні (днів)
1+718.70 грн
10+561.78 грн
25+517.13 грн
100+428.07 грн
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MBR20030CT MBR20030CT GeneSiC Semiconductor mbr20020ct.pdf Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBRT30040 MBRT30040 GeneSiC Semiconductor mbrt30020.pdf Description: DIODE MODULE 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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S85J S85J GeneSiC Semiconductor s85b.pdf Description: DIODE STANDARD 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
1+1092.09 грн
10+884.35 грн
25+825.37 грн
100+697.78 грн
250+651.24 грн
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MBR20030CTR MBR20030CTR GeneSiC Semiconductor mbr20020ct.pdf Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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1N2138A 1N2138A GeneSiC Semiconductor 1n2133a.pdf Description: DIODE GEN PURP 600V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MBR30035CT MBR30035CT GeneSiC Semiconductor mbr30020ct.pdf Description: DIODE MODULE 35V 200A 2TOWER
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S85JR S85JR GeneSiC Semiconductor s85b.pdf Description: DIODE STANDARD REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
1+1092.09 грн
10+884.35 грн
25+825.37 грн
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MBRT30045 MBRT30045 GeneSiC Semiconductor mbrt300100.pdf Description: DIODE MODULE 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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1N2138AR 1N2138AR GeneSiC Semiconductor 1n2133a.pdf Description: DIODE GEN PURP REV 600V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
1+900.44 грн
10+716.82 грн
25+664.36 грн
100+555.82 грн
В кошику  од. на суму  грн.
MBR30035CTR MBR30035CTR GeneSiC Semiconductor mbr30020ct.pdf Description: DIODE MOD SCHOTT 35V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+7467.03 грн
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S85Q S85Q GeneSiC Semiconductor s85k.pdf Description: DIODE STANDARD 1200V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
1+1065.66 грн
10+862.79 грн
25+805.29 грн
100+680.79 грн
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1N1188 1N1188 GeneSiC Semiconductor 1n1188.pdf Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MBRT30045R MBRT30045R GeneSiC Semiconductor mbrt300100.pdf Description: DIODE MOD SCHOTT 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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S85QR S85QR GeneSiC Semiconductor s85k.pdf Description: DIODE GEN PURP REV 1.2KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MBRT400100 MBRT400100 GeneSiC Semiconductor mbrt400100.pdf Description: DIODE MOD SCHOT 100V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+8504.60 грн
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MBR40035CT MBR40035CT GeneSiC Semiconductor mbr40020ct_thru_mbr40040ctr.pdf Description: DIODE MODULE 35V 400A 2TOWER
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MBRT40035 MBRT40035 GeneSiC Semiconductor mbrt40020_thru_mbrt40040r.pdf Description: DIODE MODULE 35V 400A 3TOWER
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MBR12020CT MBR12020CT GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBRT400100R MBRT400100R GeneSiC Semiconductor mbrt400100.pdf Description: DIODE MODULE 100V 400A 3TOWER
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1N3214R 1N3214R GeneSiC Semiconductor 1n3212.pdf Description: DIODE GEN PURP REV 600V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MBRT40035R MBRT40035R GeneSiC Semiconductor mbrt40020_thru_mbrt40040r.pdf Description: DIODE MODULE 35V 400A 3TOWER
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MBR12020CTR MBR12020CTR GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
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FR30G02 fr30a02.pdf
FR30G02
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 400V 30A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1059.87 грн
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FR30GR02 fr30a02.pdf
FR30GR02
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 30A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1124.31 грн
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FR40G02 fr40b02.pdf
FR40G02
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1269.70 грн
10+1032.95 грн
25+965.86 грн
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MBR12035 CTR mbr12020ct.pdf
MBR12035 CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
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FR40GR02 fr40b02.pdf
FR40GR02
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
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MBR12040CT mbr12020ct.pdf
MBR12040CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBR12040CTR mbr12020ct.pdf
MBR12040CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
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MBRT20035R mbrt20020.pdf
MBRT20035R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
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1N3889 1n3889.pdf
1N3889
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
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MBRT20040R mbrt20020.pdf
MBRT20040R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
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MBR12060CT mbr120100ct.pdf
MBR12060CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBR400100CTR mbr400100ct.pdf
MBR400100CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
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1N2130AR 1n2128a.pdf
1N2130AR
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 150V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 1016 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+831.05 грн
10+661.53 грн
25+613.14 грн
100+512.96 грн
250+475.42 грн
В кошику  од. на суму  грн.
S300YR s300y.pdf
S300YR
Виробник: GeneSiC Semiconductor
Description: DIODE STD REV 1600V 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MBRT30040R mbrt30020.pdf
MBRT30040R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8473.21 грн
В кошику  од. на суму  грн.
MBRH12040 mbrh12020r.pdf
MBRH12040
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 120A
Packaging: Bulk
Package / Case: D-67
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 20 V
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MBRH12040R mbrh12020r.pdf
MBRH12040R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4619.50 грн
10+3806.76 грн
25+3578.10 грн
В кошику  од. на суму  грн.
1N1188R 1n1188.pdf
1N1188R
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+836.00 грн
В кошику  од. на суму  грн.
1N1190 1n1188.pdf
1N1190
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 35A DO5
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1N1199AR 1n1199a.pdf
1N1199AR
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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FR70G02 fr70b02.pdf
FR70G02
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
товару немає в наявності
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MBRT20035 mbrt20020.pdf
MBRT20035
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товару немає в наявності
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FR70GR02 fr70b02.pdf
FR70GR02
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1762.05 грн
10+1414.95 грн
25+1414.83 грн
В кошику  од. на суму  грн.
MUR7020 mur7005_thru_mur7020r.pdf
MUR7020
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 70A DO5
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MBR12045CT mbr120100ct.pdf
MBR12045CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
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MBRT20040 mbrt20020.pdf
MBRT20040
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7905.68 грн
10+6677.30 грн
25+6337.89 грн
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FR85G02 fr85b02.pdf
FR85G02
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 85 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2031.36 грн
10+1656.70 грн
25+1550.70 грн
100+1316.70 грн
В кошику  од. на суму  грн.
MBR12045CTR mbr120100ct.pdf
MBR12045CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
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FR85GR02 fr85b02.pdf
FR85GR02
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 85A DO5
товару немає в наявності
В кошику  од. на суму  грн.
MBR400100CT mbr400100ct.pdf
MBR400100CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7296.03 грн
10+6162.22 грн
25+5848.98 грн
В кошику  од. на суму  грн.
FST16035 fst16020.pdf
FST16035
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 35V 160A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 160A
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 160 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6303.89 грн
10+5254.40 грн
25+4961.08 грн
В кошику  од. на суму  грн.
1N3889R 1n3889.pdf
1N3889R
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+679.87 грн
10+531.39 грн
25+489.17 грн
100+404.91 грн
В кошику  од. на суму  грн.
MBRT30035 mbrt30020.pdf
MBRT30035
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8473.21 грн
В кошику  од. на суму  грн.
MBR12060CTR mbr120100ct.pdf
MBR12060CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
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S300Y s300y.pdf
S300Y
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 1600V 300A DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
MBRT30035R mbrt30020.pdf
MBRT30035R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8473.21 грн
В кошику  од. на суму  грн.
1N1184 1n1183.pdf
1N1184
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+770.74 грн
10+620.49 грн
25+577.62 грн
100+486.57 грн
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1N3892R 1n3889.pdf
1N3892R
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 192 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+718.70 грн
10+561.78 грн
25+517.13 грн
100+428.07 грн
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MBR20030CT mbr20020ct.pdf
MBR20030CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBRT30040 mbrt30020.pdf
MBRT30040
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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S85J s85b.pdf
S85J
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1092.09 грн
10+884.35 грн
25+825.37 грн
100+697.78 грн
250+651.24 грн
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MBR20030CTR mbr20020ct.pdf
MBR20030CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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1N2138A 1n2133a.pdf
1N2138A
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MBR30035CT mbr30020ct.pdf
MBR30035CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 200A 2TOWER
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S85JR s85b.pdf
S85JR
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 600V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1092.09 грн
10+884.35 грн
25+825.37 грн
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MBRT30045 mbrt300100.pdf
MBRT30045
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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1N2138AR 1n2133a.pdf
1N2138AR
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+900.44 грн
10+716.82 грн
25+664.36 грн
100+555.82 грн
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MBR30035CTR mbr30020ct.pdf
MBR30035CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7467.03 грн
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S85Q s85k.pdf
S85Q
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 1200V 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1065.66 грн
10+862.79 грн
25+805.29 грн
100+680.79 грн
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1N1188 1n1188.pdf
1N1188
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 400V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MBRT30045R mbrt300100.pdf
MBRT30045R
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 150A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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S85QR s85k.pdf
S85QR
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 1.2KV 85A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 85 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MBRT400100 mbrt400100.pdf
MBRT400100
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 200 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8504.60 грн
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MBR40035CT mbr40020ct_thru_mbr40040ctr.pdf
MBR40035CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 2TOWER
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MBRT40035 mbrt40020_thru_mbrt40040r.pdf
MBRT40035
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 3TOWER
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MBR12020CT mbr12020ct.pdf
MBR12020CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBRT400100R mbrt400100.pdf
MBRT400100R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 400A 3TOWER
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1N3214R 1n3212.pdf
1N3214R
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 600V 15A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MBRT40035R mbrt40020_thru_mbrt40040r.pdf
MBRT40035R
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 400A 3TOWER
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MBR12020CTR mbr12020ct.pdf
MBR12020CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 120
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
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