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MBR300100CTR GeneSiC Semiconductor mbr300100ct.pdf Description: DIODE MODULE 100V 300A 2TOWER
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MBR30020CT MBR30020CT GeneSiC Semiconductor mbr30020ct_thru_mbr30040ctr.pdf Description: DIODE MODULE 20V 300A 2TOWER
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MBR30020CTR MBR30020CTR GeneSiC Semiconductor mbr30020ct_thru_mbr30040ctr.pdf Description: DIODE MODULE 20V 300A 2TOWER
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MBR30030CT MBR30030CT GeneSiC Semiconductor mbr30020ct.pdf Description: DIODE MODULE 30V 300A 2TOWER
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MBR30030CTR MBR30030CTR GeneSiC Semiconductor mbr30020ct.pdf Description: DIODE MODULE 30V 300A 2TOWER
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MBR30040CT GeneSiC Semiconductor mbr30020ct_thru_mbr30040ctr.pdf Description: DIODE MODULE 40V 300A 2TOWER
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MBR30040CTR GeneSiC Semiconductor mbr30020ct_thru_mbr30040ctr.pdf Description: DIODE MODULE 40V 300A 2TOWER
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MBR30045CT MBR30045CT GeneSiC Semiconductor mbr300100ct.pdf Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
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MBR30045CTR GeneSiC Semiconductor mbr300100ct.pdf Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
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MBR30060CT GeneSiC Semiconductor mbr300100ct.pdf Description: DIODE MODULE 60V 300A 2TOWER
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MBR30060CTR GeneSiC Semiconductor mbr300100ct.pdf Description: DIODE MODULE 60V 300A 2TOWER
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MBR30080CT GeneSiC Semiconductor mbr30045ct_thru_mbr300100ctr.pdf Description: DIODE MODULE 80V 300A 2TOWER
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MBR30080CTR GeneSiC Semiconductor mbr30045ct_thru_mbr300100ctr.pdf Description: DIODE MODULE 80V 300A 2TOWER
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MBR35100 GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR35100R GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3520 GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3520R GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY REV 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3530 GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3530R GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY REV 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3535 GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3535R GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY REV 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3540 MBR3540 GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3540R GeneSiC Semiconductor mbr3520.pdf Description: DIODE SCHOTTKY REV 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3545 MBR3545 GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3545R GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY REV 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3560 GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY 60V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3560R MBR3560R GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY REV 60V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+1411.54 грн
10+1158.35 грн
25+1086.95 грн
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MBR3580 GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY 80V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3580R GeneSiC Semiconductor mbr3560.pdf Description: DIODE SCHOTTKY REV 80V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR40020CT MBR40020CT GeneSiC Semiconductor mbr40020ct_thru_mbr40040ctr.pdf Description: DIODE MODULE 20V 400A 2TOWER
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MBR40020CTR MBR40020CTR GeneSiC Semiconductor mbr40020ct_thru_mbr40040ctr.pdf Description: DIODE MODULE 20V 400A 2TOWER
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MBR40030CT MBR40030CT GeneSiC Semiconductor mbr40020ct_thru_mbr40040ctr.pdf Description: DIODE MODULE 30V 400A 2TOWER
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MBR40030CTR MBR40030CTR GeneSiC Semiconductor mbr40020ct_thru_mbr40040ctr.pdf Description: DIODE MODULE 30V 400A 2TOWER
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MBR40045CT MBR40045CT GeneSiC Semiconductor mbr40045ct_thru_mbr400100ctr.pdf Description: DIODE MODULE 45V 400A 2TOWER
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MBR40045CTR MBR40045CTR GeneSiC Semiconductor mbr40045ct_thru_mbr400100ctr.pdf Description: DIODE MODULE 45V 400A 2TOWER
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MBR40060CT MBR40060CT GeneSiC Semiconductor mbr400100ct.pdf Description: DIODE MODULE 60V 400A 2TOWER
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MBR40060CTR MBR40060CTR GeneSiC Semiconductor mbr400100ct.pdf Description: DIODE MODULE 60V 400A 2TOWER
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MBR500100CT MBR500100CT GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR500100CTR MBR500100CTR GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50020CT MBR50020CT GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50020CTR MBR50020CTR GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50030CT MBR50030CT GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50030CTR MBR50030CTR GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50035CT MBR50035CT GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50035CTR MBR50035CTR GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50040CT MBR50040CT GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50040CTR MBR50040CTR GeneSiC Semiconductor mbr50020ctr.pdf Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50045CT MBR50045CT GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50045CTR MBR50045CTR GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50060CT MBR50060CT GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50060CTR MBR50060CTR GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50080CT MBR50080CT GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50080CTR MBR50080CTR GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR600100CT MBR600100CT GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 100V 300A 2TOWER
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MBR600100CTR MBR600100CTR GeneSiC Semiconductor mbr600100ct.pdf Description: DIODE MODULE 100V 300A 2TOWER
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MBR60020CT MBR60020CT GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60020CTR MBR60020CTR GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60030CT MBR60030CT GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MODULE 30V 300A 2TOWER
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MBR60030CTR MBR60030CTR GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MODULE 30V 300A 2TOWER
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MBR60035CT MBR60035CT GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MODULE 35V 300A 2TOWER
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MBR300100CTR mbr300100ct.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
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MBR30020CT mbr30020ct_thru_mbr30040ctr.pdf
MBR30020CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 2TOWER
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MBR30020CTR mbr30020ct_thru_mbr30040ctr.pdf
MBR30020CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 2TOWER
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MBR30030CT mbr30020ct.pdf
MBR30030CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
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MBR30030CTR mbr30020ct.pdf
MBR30030CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
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MBR30040CT mbr30020ct_thru_mbr30040ctr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
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MBR30040CTR mbr30020ct_thru_mbr30040ctr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
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MBR30045CT mbr300100ct.pdf
MBR30045CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
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MBR30045CTR mbr300100ct.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
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MBR30060CT mbr300100ct.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
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MBR30060CTR mbr300100ct.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
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MBR30080CT mbr30045ct_thru_mbr300100ctr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
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MBR30080CTR mbr30045ct_thru_mbr300100ctr.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
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MBR35100 mbr3560.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR35100R mbr3560.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3520 mbr3520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3520R mbr3520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3530 mbr3520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3530R mbr3520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3535 mbr3520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3535R mbr3520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3540 mbr3520.pdf
MBR3540
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3540R mbr3520.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3545 mbr3560.pdf
MBR3545
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3545R mbr3560.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3560 mbr3560.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3560R mbr3560.pdf
MBR3560R
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 60V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1411.54 грн
10+1158.35 грн
25+1086.95 грн
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MBR3580 mbr3560.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 80V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3580R mbr3560.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR40020CT mbr40020ct_thru_mbr40040ctr.pdf
MBR40020CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 400A 2TOWER
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MBR40020CTR mbr40020ct_thru_mbr40040ctr.pdf
MBR40020CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 400A 2TOWER
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MBR40030CT mbr40020ct_thru_mbr40040ctr.pdf
MBR40030CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 400A 2TOWER
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MBR40030CTR mbr40020ct_thru_mbr40040ctr.pdf
MBR40030CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 400A 2TOWER
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MBR40045CT mbr40045ct_thru_mbr400100ctr.pdf
MBR40045CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 2TOWER
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MBR40045CTR mbr40045ct_thru_mbr400100ctr.pdf
MBR40045CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 400A 2TOWER
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MBR40060CT mbr400100ct.pdf
MBR40060CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 400A 2TOWER
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MBR40060CTR mbr400100ct.pdf
MBR40060CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 400A 2TOWER
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MBR500100CT mbr500100ctr.pdf
MBR500100CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR500100CTR mbr500100ctr.pdf
MBR500100CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50020CT mbr50020ctr.pdf
MBR50020CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50020CTR mbr50020ctr.pdf
MBR50020CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50030CT mbr50020ctr.pdf
MBR50030CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50030CTR mbr50020ctr.pdf
MBR50030CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 30V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50035CT mbr50020ctr.pdf
MBR50035CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50035CTR mbr50020ctr.pdf
MBR50035CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50040CT mbr50020ctr.pdf
MBR50040CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50040CTR mbr50020ctr.pdf
MBR50040CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50045CT mbr500100ctr.pdf
MBR50045CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50045CTR mbr500100ctr.pdf
MBR50045CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50060CT mbr500100ctr.pdf
MBR50060CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50060CTR mbr500100ctr.pdf
MBR50060CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50080CT mbr500100ctr.pdf
MBR50080CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR50080CTR mbr500100ctr.pdf
MBR50080CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR600100CT mbr600100ct.pdf
MBR600100CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
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MBR600100CTR mbr600100ct.pdf
MBR600100CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
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MBR60020CT mbr60020ctr.pdf
MBR60020CT
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60020CTR mbr60020ctr.pdf
MBR60020CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60030CT mbr60020ctr.pdf
MBR60030CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
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MBR60030CTR mbr60020ctr.pdf
MBR60030CTR
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
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MBR60035CT mbr60020ctr.pdf
MBR60035CT
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 35V 300A 2TOWER
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