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STK22C48-NF45ITR STK22C48-NF45ITR Infineon Technologies STK22C48_Rev_D.pdf Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-NF45TR STK22C48-NF45TR Infineon Technologies STK22C48_Rev_D.pdf Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF25ITR STK22C48-SF25ITR Infineon Technologies STK22C48_Rev_D.pdf Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF25TR STK22C48-SF25TR Infineon Technologies STK22C48_Rev_D.pdf Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF45ITR STK22C48-SF45ITR Infineon Technologies STK22C48_Rev_D.pdf Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF45TR STK22C48-SF45TR Infineon Technologies STK22C48_Rev_D.pdf Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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BAS 3020B E6327 BAS 3020B E6327 Infineon Technologies bas3020b.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304318a6cd680118ef5f642f01da Description: DIODE SCHOTTKY 30V 2A SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 Infineon Technologies bc817su.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115474bf91a19fd Description: TRANS NPN 45V 0.5A SC-74
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BFP 650F E6327 BFP 650F E6327 Infineon Technologies BFP650F.pdf Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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BGA715L7E6327XTSA1 BGA715L7E6327XTSA1 Infineon Technologies BGA715L7.pdf Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
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BGA771L16E6327XTSA1 BGA771L16E6327XTSA1 Infineon Technologies BGA771L16.pdf Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
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BGM681L11E6327XT BGM681L11E6327XT Infineon Technologies BGM681L11.pdf Description: IC GPS FRONT-END 3.6V TSLP11-1
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Frequency: 1575MHz
RF Type: GPS
Supplier Device Package: PG-TSLP-11-1
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+113.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
DSL70E6327HTSA1 DSL70E6327HTSA1 Infineon Technologies dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007 Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+12.95 грн
6000+12.42 грн
9000+12.37 грн
Мінімальне замовлення: 3000
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ESD0P4RFLE6327XTSA1 ESD0P4RFLE6327XTSA1 Infineon Technologies esd0p4rf.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a304318f3fe29011914ad9b81031f Description: TVS DIODE 50VWM 9VC TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Last Time Buy
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ESD3V3U1U-02LRH E6327 ESD3V3U1U-02LRH E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V3U1U-02LRH E6327 ESD5V3U1U-02LRH E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Part Status: Obsolete
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ESD5V3U1U-02LS E6327 ESD5V3U1U-02LS E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V3U2U-03F E6327 ESD5V3U2U-03F E6327 Infineon Technologies esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Description: TVS DIODE 5.3VWM 15VC TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSFP-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
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ESD5V3U2U03LRHE6327XTMA1 ESD5V3U2U03LRHE6327XTMA1 Infineon Technologies esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
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ESD5V3U4RRSE6327HTSA1 ESD5V3U4RRSE6327HTSA1 Infineon Technologies ESD5V3U4RRS.pdf Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 50W
Power Line Protection: Yes
Part Status: Obsolete
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 Infineon Technologies bc817su.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115474bf91a19fd Description: TRANS NPN 45V 0.5A SC-74
на замовлення 1374 шт:
термін постачання 21-31 дні (днів)
8+44.27 грн
10+36.28 грн
100+27.09 грн
500+19.97 грн
1000+15.79 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BFP 650F E6327 BFP 650F E6327 Infineon Technologies BFP650F.pdf Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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BGM681L11E6327XT BGM681L11E6327XT Infineon Technologies BGM681L11.pdf Description: IC GPS FRONT-END 3.6V TSLP11-1
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Frequency: 1575MHz
RF Type: GPS
Supplier Device Package: PG-TSLP-11-1
на замовлення 9744 шт:
термін постачання 21-31 дні (днів)
3+153.75 грн
10+129.60 грн
25+124.89 грн
100+112.25 грн
250+109.86 грн
500+108.41 грн
1000+105.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSL70E6327HTSA1 DSL70E6327HTSA1 Infineon Technologies dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007 Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
на замовлення 22371 шт:
термін постачання 21-31 дні (днів)
9+39.44 грн
13+24.34 грн
100+23.85 грн
500+17.46 грн
1000+15.35 грн
Мінімальне замовлення: 9
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ESD0P4RFLE6327XTSA1 ESD0P4RFLE6327XTSA1 Infineon Technologies esd0p4rf.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a304318f3fe29011914ad9b81031f Description: TVS DIODE 50VWM 9VC TSLP-4-7
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Last Time Buy
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ESD3V3U1U-02LRH E6327 ESD3V3U1U-02LRH E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V3U1U-02LRH E6327 ESD5V3U1U-02LRH E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Part Status: Obsolete
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ESD5V3U1U-02LS E6327 ESD5V3U1U-02LS E6327 Infineon Technologies ESD5V3U1U.pdf Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V3U2U03LRHE6327XTMA1 ESD5V3U2U03LRHE6327XTMA1 Infineon Technologies esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 7503 шт:
термін постачання 21-31 дні (днів)
9+37.83 грн
12+26.35 грн
100+17.54 грн
500+12.44 грн
1000+10.06 грн
2000+9.47 грн
5000+8.71 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 Infineon Technologies bas3010aseries.pdf?folderId=db3a304412b407950112b431b9b25550&fileId=db3a30431ddc9372011dfbc50f231c06 Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 40830 шт:
термін постачання 21-31 дні (днів)
13+25.76 грн
20+15.66 грн
100+13.67 грн
500+9.63 грн
1000+8.05 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BAS3010B03WE6327HTSA1 BAS3010B03WE6327HTSA1 Infineon Technologies bas3010bseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313e278750113e29a03a70005 Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
на замовлення 28058 шт:
термін постачання 21-31 дні (днів)
15+21.73 грн
24+13.02 грн
100+11.95 грн
500+9.17 грн
1000+7.03 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BAT240AE6327HTSA1 BAT240AE6327HTSA1 Infineon Technologies BAT240_10-4-07.pdf Description: DIODE ARR SCHOT 240V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BCX6825E6327HTSA1 BCX6825E6327HTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
товару немає в наявності
В кошику  од. на суму  грн.
BFP640E6327BTSA1 BFP640E6327BTSA1 Infineon Technologies BFP640.pdf Description: RF TRANS NPN 4.5V 40GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BFP650E6327HTSA1 BFP650E6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товару немає в наявності
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ESD5V0S1U03WE6327HTSA1 ESD5V0S1U03WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 5VWM 14VC PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 430pF @ 1MHz
Current - Peak Pulse (10/1000µs): 40A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SOD323-3D
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V0S2U06E6327HTSA1 ESD5V0S2U06E6327HTSA1 Infineon Technologies esd5v0sseries.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d01148839aaf20d03 Description: TVS DIODE 5VWM 14VC SOT23
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V0S5USE6327HTSA1 ESD5V0S5USE6327HTSA1 Infineon Technologies esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04 Description: TVS DIODE 5VWM 13VC SOT363
товару немає в наявності
В кошику  од. на суму  грн.
IRF6218STRLPBF IRF6218STRLPBF Infineon Technologies irf6218spbf.pdf?fileId=5546d462533600a4015355e79f5e19e2 Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товару немає в наявності
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IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2 Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+62.75 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFR4615TRLPBF IRFR4615TRLPBF Infineon Technologies irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4 Description: MOSFET N-CH 150V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+39.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR4620TRLPBF IRFR4620TRLPBF Infineon Technologies irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7 Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+43.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFS4620TRLPBF IRFS4620TRLPBF Infineon Technologies irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 18400 шт:
термін постачання 21-31 дні (днів)
800+54.66 грн
1600+50.62 грн
2400+49.62 грн
4000+45.11 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFS5620TRLPBF IRFS5620TRLPBF Infineon Technologies IRFS(L)5620.pdf Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
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IRFSL5620PBF IRFSL5620PBF Infineon Technologies IRFS(L)5620.pdf Description: MOSFET N-CH 200V 24A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
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IRFU4620PBF IRFU4620PBF Infineon Technologies irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7 description Description: MOSFET N-CH 200V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
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IRLS3036TRL7PP IRLS3036TRL7PP Infineon Technologies irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+132.74 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRLSL3036PBF IRLSL3036PBF Infineon Technologies irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2 Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
на замовлення 6455 шт:
термін постачання 21-31 дні (днів)
2+206.07 грн
10+128.05 грн
100+88.06 грн
500+66.58 грн
1000+61.42 грн
2000+57.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR4615TRLPBF IRFR4615TRLPBF Infineon Technologies irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4 Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 7392 шт:
термін постачання 21-31 дні (днів)
4+106.25 грн
10+71.62 грн
100+54.22 грн
500+44.30 грн
1000+41.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFR4620TRLPBF IRFR4620TRLPBF Infineon Technologies irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7 Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 3073 шт:
термін постачання 21-31 дні (днів)
3+157.77 грн
10+97.20 грн
100+66.03 грн
500+49.46 грн
1000+47.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS4620TRLPBF IRFS4620TRLPBF Infineon Technologies irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 18919 шт:
термін постачання 21-31 дні (днів)
3+144.09 грн
10+95.96 грн
100+71.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS5620TRLPBF IRFS5620TRLPBF Infineon Technologies IRFS(L)5620.pdf Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IRLS3036TRL7PP IRLS3036TRL7PP Infineon Technologies irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
на замовлення 3919 шт:
термін постачання 21-31 дні (днів)
2+288.17 грн
10+199.06 грн
100+151.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4906KHTSA1 TLE4906KHTSA1 Infineon Technologies Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+23.61 грн
6000+21.91 грн
9000+21.46 грн
15000+19.64 грн
21000+19.33 грн
30000+19.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE4946KHTSA1 TLE4946KHTSA1 Infineon Technologies TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379 Description: MAGNETIC SWITCH LATCH SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE4966KHTSA1 TLE4966KHTSA1 Infineon Technologies TLE4966K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc945ed46383 Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE49761KHTSA1 TLE49761KHTSA1 Infineon Technologies TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7 Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE49762KHTSA1 TLE49762KHTSA1 Infineon Technologies Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c Description: MAGNETIC SWITCH UNIPOLAR SC59
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ESD0P2RF02LSE6327XTSA1 ESD0P2RF02LSE6327XTSA1 Infineon Technologies ESD0P2RF.pdf Description: TVS DIODE 5.3VWM 21VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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STK22C48-NF45ITR STK22C48_Rev_D.pdf
STK22C48-NF45ITR
Виробник: Infineon Technologies
Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-NF45TR STK22C48_Rev_D.pdf
STK22C48-NF45TR
Виробник: Infineon Technologies
Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF25ITR STK22C48_Rev_D.pdf
STK22C48-SF25ITR
Виробник: Infineon Technologies
Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF25TR STK22C48_Rev_D.pdf
STK22C48-SF25TR
Виробник: Infineon Technologies
Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF45ITR STK22C48_Rev_D.pdf
STK22C48-SF45ITR
Виробник: Infineon Technologies
Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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STK22C48-SF45TR STK22C48_Rev_D.pdf
STK22C48-SF45TR
Виробник: Infineon Technologies
Description: IC NVSRAM 16KBIT PARALLEL 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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BAS 3020B E6327 bas3020b.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304318a6cd680118ef5f642f01da
BAS 3020B E6327
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 2A SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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BC817SUE6327HTSA1 bc817su.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115474bf91a19fd
BC817SUE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A SC-74
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BFP 650F E6327 BFP650F.pdf
BFP 650F E6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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BGA715L7E6327XTSA1 BGA715L7.pdf
BGA715L7E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
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BGA771L16E6327XTSA1 BGA771L16.pdf
BGA771L16E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 3.4mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSLP-16-1
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BGM681L11E6327XT BGM681L11.pdf
BGM681L11E6327XT
Виробник: Infineon Technologies
Description: IC GPS FRONT-END 3.6V TSLP11-1
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Frequency: 1575MHz
RF Type: GPS
Supplier Device Package: PG-TSLP-11-1
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+113.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
DSL70E6327HTSA1 dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007
DSL70E6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.95 грн
6000+12.42 грн
9000+12.37 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESD0P4RFLE6327XTSA1 esd0p4rf.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a304318f3fe29011914ad9b81031f
ESD0P4RFLE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 50VWM 9VC TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Last Time Buy
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ESD3V3U1U-02LRH E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V3U1U-02LRH E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Part Status: Obsolete
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ESD5V3U1U-02LS E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LS E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V3U2U-03F E6327 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
ESD5V3U2U-03F E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSFP-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
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ESD5V3U2U03LRHE6327XTMA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
ESD5V3U2U03LRHE6327XTMA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
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ESD5V3U4RRSE6327HTSA1 ESD5V3U4RRS.pdf
ESD5V3U4RRSE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC PGSOT363PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-SOT363-PO
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 50W
Power Line Protection: Yes
Part Status: Obsolete
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BC817SUE6327HTSA1 bc817su.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115474bf91a19fd
BC817SUE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A SC-74
на замовлення 1374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.27 грн
10+36.28 грн
100+27.09 грн
500+19.97 грн
1000+15.79 грн
Мінімальне замовлення: 8
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BFP 650F E6327 BFP650F.pdf
BFP 650F E6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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BGM681L11E6327XT BGM681L11.pdf
BGM681L11E6327XT
Виробник: Infineon Technologies
Description: IC GPS FRONT-END 3.6V TSLP11-1
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Frequency: 1575MHz
RF Type: GPS
Supplier Device Package: PG-TSLP-11-1
на замовлення 9744 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.75 грн
10+129.60 грн
25+124.89 грн
100+112.25 грн
250+109.86 грн
500+108.41 грн
1000+105.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSL70E6327HTSA1 dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007
DSL70E6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
Part Status: Active
на замовлення 22371 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.44 грн
13+24.34 грн
100+23.85 грн
500+17.46 грн
1000+15.35 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ESD0P4RFLE6327XTSA1 esd0p4rf.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a304318f3fe29011914ad9b81031f
ESD0P4RFLE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 50VWM 9VC TSLP-4-7
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-TSLP-4-7
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power Line Protection: No
Part Status: Last Time Buy
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ESD3V3U1U-02LRH E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V3U1U-02LRH E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-7
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Part Status: Obsolete
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ESD5V3U1U-02LS E6327 ESD5V3U1U.pdf
ESD5V3U1U-02LS E6327
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
товару немає в наявності
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ESD5V3U2U03LRHE6327XTMA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
ESD5V3U2U03LRHE6327XTMA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 15V PGTSLP37
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-3-7
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 7503 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.83 грн
12+26.35 грн
100+17.54 грн
500+12.44 грн
1000+10.06 грн
2000+9.47 грн
5000+8.71 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BAS3010A03WE6327HTSA1 bas3010aseries.pdf?folderId=db3a304412b407950112b431b9b25550&fileId=db3a30431ddc9372011dfbc50f231c06
BAS3010A03WE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 40830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.76 грн
20+15.66 грн
100+13.67 грн
500+9.63 грн
1000+8.05 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BAS3010B03WE6327HTSA1 bas3010bseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313e278750113e29a03a70005
BAS3010B03WE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
на замовлення 28058 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.73 грн
24+13.02 грн
100+11.95 грн
500+9.17 грн
1000+7.03 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BAT240AE6327HTSA1 BAT240_10-4-07.pdf
BAT240AE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 240V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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BCX6825E6327HTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6825E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
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BFP640E6327BTSA1 BFP640.pdf
BFP640E6327BTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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BFP650E6327HTSA1 fundamentals-of-power-semiconductors
BFP650E6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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ESD5V0S1U03WE6327HTSA1 fundamentals-of-power-semiconductors
ESD5V0S1U03WE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 14VC PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 430pF @ 1MHz
Current - Peak Pulse (10/1000µs): 40A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-SOD323-3D
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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ESD5V0S2U06E6327HTSA1 esd5v0sseries.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d01148839aaf20d03
ESD5V0S2U06E6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 14VC SOT23
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V0S5USE6327HTSA1 esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04
ESD5V0S5USE6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5VWM 13VC SOT363
товару немає в наявності
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IRF6218STRLPBF irf6218spbf.pdf?fileId=5546d462533600a4015355e79f5e19e2
IRF6218STRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товару немає в наявності
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IRFH5053TRPBF irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2
IRFH5053TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+62.75 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFR4615TRLPBF irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4
IRFR4615TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+39.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR4620TRLPBF irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7
IRFR4620TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+43.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFS4620TRLPBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
IRFS4620TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 18400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+54.66 грн
1600+50.62 грн
2400+49.62 грн
4000+45.11 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFS5620TRLPBF IRFS(L)5620.pdf
IRFS5620TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
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IRFSL5620PBF IRFS(L)5620.pdf
IRFSL5620PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
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IRFU4620PBF description irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7
IRFU4620PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+132.74 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRLSL3036PBF irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d
IRLSL3036PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
товару немає в наявності
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IRFH5053TRPBF irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2
IRFH5053TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
на замовлення 6455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.07 грн
10+128.05 грн
100+88.06 грн
500+66.58 грн
1000+61.42 грн
2000+57.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR4615TRLPBF irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4
IRFR4615TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 7392 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+106.25 грн
10+71.62 грн
100+54.22 грн
500+44.30 грн
1000+41.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFR4620TRLPBF irfr4620pbf.pdf?fileId=5546d462533600a4015356323ae920f7
IRFR4620TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 3073 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.77 грн
10+97.20 грн
100+66.03 грн
500+49.46 грн
1000+47.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS4620TRLPBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
IRFS4620TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
на замовлення 18919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.09 грн
10+95.96 грн
100+71.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS5620TRLPBF IRFS(L)5620.pdf
IRFS5620TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
на замовлення 3919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+288.17 грн
10+199.06 грн
100+151.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+23.61 грн
6000+21.91 грн
9000+21.46 грн
15000+19.64 грн
21000+19.33 грн
30000+19.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE4946KHTSA1 TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379
TLE4946KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19mT Trip, -19mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE4966KHTSA1 TLE4966K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc945ed46383
TLE4966KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR TSOP-6-6
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE49761KHTSA1 TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7
TLE49761KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE49762KHTSA1 Infineon-TLE4976_2K-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432c59a87e012c5e9c3dc5351c
TLE49762KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
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ESD0P2RF02LSE6327XTSA1 ESD0P2RF.pdf
ESD0P2RF02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
товару немає в наявності
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