Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129558) > Сторінка 148 з 2160

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IKD04N60R IKD04N60R Infineon Technologies IK%28D%2CU%2904N60R.pdf Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 240µJ
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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IKD06N60R IKD06N60R Infineon Technologies IKD06N60R.pdf Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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IKD10N60R IKD10N60R Infineon Technologies IK%28D%2CU%2910N60R.pdf Description: IGBT TRENCH 600V 20A TO252-3
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IPB60R190C6ATMA1 IPB60R190C6ATMA1 Infineon Technologies infineon-ipb60r190c6-datasheet-en.pdf Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+100.35 грн
3000+87.20 грн
Мінімальне замовлення: 1000 шт
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IPD60R380C6 IPD60R380C6 Infineon Technologies Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPD60R600C6BTMA1 IPD60R600C6BTMA1 Infineon Technologies Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPD60R950C6 IPD60R950C6 Infineon Technologies Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6 Description: MOSFET N-CH 600V 4.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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BAT6402WH6327XTSA1 BAT6402WH6327XTSA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
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BCR321UE6327HTSA1 BCR321UE6327HTSA1 Infineon Technologies infineon-bcr320u-bcr321u-datasheet-en.pdf Description: IC LED DRVR LINEAR 250MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 10kHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 25V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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BCR420UE6327HTSA1 BCR420UE6327HTSA1 Infineon Technologies Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Description: IC LED DRVR LIN PWM 200MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 200mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 225000 шт:
термін постачання 21-31 дні (днів)
3000+9.54 грн
6000+8.92 грн
9000+8.79 грн
15000+8.11 грн
21000+8.03 грн
30000+7.95 грн
75000+7.65 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BCR421UE6327HTSA1 BCR421UE6327HTSA1 Infineon Technologies Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Description: IC LED DRVR LIN PWM 200MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 200mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Max): 4.5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+9.91 грн
6000+9.27 грн
9000+9.13 грн
15000+8.42 грн
21000+8.34 грн
30000+8.26 грн
Мінімальне замовлення: 3000 шт
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ESD5V3S1B02LRHE6327XTSA1 ESD5V3S1B02LRHE6327XTSA1 Infineon Technologies ESD5V3S1B-02LRH.pdf Description: TVS DIODE 5.3VWM 13VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 80W
Power Line Protection: No
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IFX25001MEV25HTSA1 IFX25001MEV25HTSA1 Infineon Technologies IFX25001.pdf Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IFX25001MEV33HTSA1 IFX25001MEV33HTSA1 Infineon Technologies IFX25001.pdf Description: IC REG LIN 3.3V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IFX25001TS V10 IFX25001TS V10 Infineon Technologies Description: IC REG LINEAR 10V 400MA TO220-3
товару немає в наявності
 Мінімальне замовлення: 500 шт
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IFX25001TSV50AKSA1 IFX25001TSV50AKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC REG LINEAR 5V 400MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IFX25001TS V85 IFX25001TS V85 Infineon Technologies Description: IC REG LINEAR 8.5V 400MA TO220-3
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IKW75N60TFKSA1 IKW75N60TFKSA1 Infineon Technologies infineon-ikw75n60t-datasheet-en.pdf Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
1+676.99 грн
30+382.35 грн
120+323.24 грн
510+262.72 грн
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 Infineon Technologies IPP048N12N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a771dd317cc5 Description: MOSFET N-CH 120V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 60 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
1+394.32 грн
10+252.91 грн
50+198.49 грн
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IPP530N15N3 G IPP530N15N3 G Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A TO220-3
на замовлення 843 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPP60R190C6XKSA1 IPP60R190C6XKSA1 Infineon Technologies IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a Description: MOSFET N-CH 600V 20.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)
2+283.46 грн
10+178.72 грн
50+138.13 грн
100+117.34 грн
500+95.82 грн
Мінімальне замовлення: 2 шт
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IPP60R380C6XKSA1 IPP60R380C6XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPP60R600C6XKSA1 IPP60R600C6XKSA1 Infineon Technologies IPP60R600C6_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a83539b37d74 Description: MOSFET N-CH 600V 7.3A TO220-3
товару немає в наявності
 Мінімальне замовлення: 500 шт
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IPW60R190C6FKSA1 IPW60R190C6FKSA1 Infineon Technologies infineon-ipw60r190c6-datasheet-en.pdf Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 2781 шт:
термін постачання 21-31 дні (днів)
1+349.97 грн
30+187.31 грн
60+169.41 грн
120+144.83 грн
510+122.14 грн
В кошику  од. на суму  грн.
CY2305CSXA-1 CY2305CSXA-1 Infineon Technologies CY2305,09.pdf Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7C148-35PC CY7C148-35PC Infineon Technologies CY7C148.pdf Description: IC SRAM 4KBIT PARALLEL 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 18-PDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 1K x 4
DigiKey Programmable: Not Verified
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CY7C109BNL-15VC CY7C109BNL-15VC Infineon Technologies CY7C109BN%2CCY7C1009BN.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C026AV-25AC CY7C026AV-25AC Infineon Technologies download Description: IC SRAM 256KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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CY7C026AV-25AI CY7C026AV-25AI Infineon Technologies Description: IC SRAM 256KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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CY7C4271-15AC CY7C4271-15AC Infineon Technologies CY7C4261%2C%2071%20RevD.pdf Description: IC FIFO SYNC 32KX9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 288K (32K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY8C24033-24PVXI CY8C24033-24PVXI Infineon Technologies CY8C24633.pdf Description: IC MCU 8BIT 8KB FLASH 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 56-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY2907FX14 CY2907FX14 Infineon Technologies CY2907.pdf Description: IC CLOCK GENERATOR 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 14-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY29948AC CY29948AC Infineon Technologies CY29948_RevJ.pdf Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
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CY29948AI CY29948AI Infineon Technologies CY29948_RevJ.pdf Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
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CY2DP818ZC CY2DP818ZC Infineon Technologies cy2dp818.pdf Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
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CY7C1328S-133AXI CY7C1328S-133AXI Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
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CY7C1325S-100AXI CY7C1325S-100AXI Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
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CY7C1324S-133AXC CY7C1324S-133AXC Infineon Technologies Description: IC SRAM 2MBIT PARALLEL 100TQFP
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CY7C1320SV18-250BZC CY7C1320SV18-250BZC Infineon Technologies Description: IC SRAM 18MBIT PAR 165FBGA
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CY7C1370SV25-167AXC CY7C1370SV25-167AXC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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 Мінімальне замовлення: 72 шт
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CY7C1414TV18-200BZXC CY7C1414TV18-200BZXC Infineon Technologies Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 36
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CY7C1415TV18-200BZI CY7C1415TV18-200BZI Infineon Technologies Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1440SV33-167AXC CY7C1440SV33-167AXC Infineon Technologies Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1423TV18-267BZXC CY7C1423TV18-267BZXC Infineon Technologies Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1423TV18-267BZC CY7C1423TV18-267BZC Infineon Technologies Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1423SV18-250BZC CY7C1423SV18-250BZC Infineon Technologies Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1460SV25-167BZXI CY7C1460SV25-167BZXI Infineon Technologies CYPR-S-A0001754654-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C4275-15ASC CY7C4275-15ASC Infineon Technologies CY7C4275,85.pdf Description: IC FIFO SYNC 32KX18 10NS 64TQFP
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 576K (32K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 50mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY8C272434-24PVXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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CY8C271434-24PXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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CY8C24423A4-24SXI CY8C24423A4-24SXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C24423A4-24PVXI CY8C24423A4-24PVXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C24423A4-24LTXI CY8C24423A4-24LTXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Bag
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C24123A4-24SXI CY8C24123A4-24SXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 8SOIC
Packaging: Bag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 6
DigiKey Programmable: Not Verified
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CY8C212234-24SXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
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CY8C211234-24SXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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CY8C203244-12LQXI Infineon Technologies Description: PROGRAMMABLE SYSTEM ON A CHIP
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CY8C202244-12LKXI Infineon Technologies Description: IC MCU
DigiKey Programmable: Not Verified
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CY7C1327S-166AXC CY7C1327S-166AXC Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
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CY7C1347S-166BGC CY7C1347S-166BGC Infineon Technologies Description: IC SRAM 4.5MBIT PAR 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 840 шт
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IKD04N60R IK%28D%2CU%2904N60R.pdf
IKD04N60R
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 240µJ
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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IKD06N60R IKD06N60R.pdf
IKD06N60R
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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IKD10N60R IK%28D%2CU%2910N60R.pdf
IKD10N60R
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 20A TO252-3
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IPB60R190C6ATMA1 infineon-ipb60r190c6-datasheet-en.pdf
IPB60R190C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+100.35 грн
3000+87.20 грн
Мінімальне замовлення: 1000 шт
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IPD60R380C6 Infineon-IPD60R380C6-DS-v02_02-EN.pdf?fileId=db3a30433ecb86d4013ed661f42d23f2
IPD60R380C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPD60R600C6BTMA1 Infineon-IPD60R600C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eef7f5937259b
IPD60R600C6BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPD60R950C6 Infineon-IPD60R950C6-DS-v02_02-en.pdf?fileId=db3a30433ee50ba8013ef00bb8dd26c6
IPD60R950C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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BAT6402WH6327XTSA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6402WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
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BCR321UE6327HTSA1 infineon-bcr320u-bcr321u-datasheet-en.pdf
BCR321UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 250MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 10kHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 25V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BCR420UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 200MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 200mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 225000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+9.54 грн
6000+8.92 грн
9000+8.79 грн
15000+8.11 грн
21000+8.03 грн
30000+7.95 грн
75000+7.65 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BCR421UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR421UE6327HTSA1
Виробник: Infineon Technologies
Description: IC LED DRVR LIN PWM 200MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 200mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Dimming: PWM
Voltage - Supply (Max): 4.5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+9.91 грн
6000+9.27 грн
9000+9.13 грн
15000+8.42 грн
21000+8.34 грн
30000+8.26 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
ESD5V3S1B02LRHE6327XTSA1 ESD5V3S1B-02LRH.pdf
ESD5V3S1B02LRHE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 13VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 80W
Power Line Protection: No
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IFX25001MEV25HTSA1 IFX25001.pdf
IFX25001MEV25HTSA1
Виробник: Infineon Technologies
Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IFX25001MEV33HTSA1 IFX25001.pdf
IFX25001MEV33HTSA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IFX25001TS V10
IFX25001TS V10
Виробник: Infineon Technologies
Description: IC REG LINEAR 10V 400MA TO220-3
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IFX25001TSV50AKSA1 Part_Number_Guide_Web.pdf
IFX25001TSV50AKSA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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IFX25001TS V85
IFX25001TS V85
Виробник: Infineon Technologies
Description: IC REG LINEAR 8.5V 400MA TO220-3
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IKW75N60TFKSA1 infineon-ikw75n60t-datasheet-en.pdf
IKW75N60TFKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+676.99 грн
30+382.35 грн
120+323.24 грн
510+262.72 грн
В кошику  од. на суму  грн.
IPP048N12N3GXKSA1 IPP048N12N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a771dd317cc5
IPP048N12N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 60 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+394.32 грн
10+252.91 грн
50+198.49 грн
В кошику  од. на суму  грн.
IPP530N15N3 G Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPP530N15N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO220-3
на замовлення 843 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPP60R190C6XKSA1 IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a
IPP60R190C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+283.46 грн
10+178.72 грн
50+138.13 грн
100+117.34 грн
500+95.82 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPP60R380C6XKSA1 fundamentals-of-power-semiconductors
IPP60R380C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPP60R600C6XKSA1 IPP60R600C6_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a83539b37d74
IPP60R600C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-3
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPW60R190C6FKSA1 infineon-ipw60r190c6-datasheet-en.pdf
IPW60R190C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 2781 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+349.97 грн
30+187.31 грн
60+169.41 грн
120+144.83 грн
510+122.14 грн
В кошику  од. на суму  грн.
CY2305CSXA-1 CY2305,09.pdf
CY2305CSXA-1
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY7C148-35PC CY7C148.pdf
CY7C148-35PC
Виробник: Infineon Technologies
Description: IC SRAM 4KBIT PARALLEL 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 18-PDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 1K x 4
DigiKey Programmable: Not Verified
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CY7C109BNL-15VC CY7C109BN%2CCY7C1009BN.pdf
CY7C109BNL-15VC
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C026AV-25AC download
CY7C026AV-25AC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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CY7C026AV-25AI
CY7C026AV-25AI
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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CY7C4271-15AC CY7C4261%2C%2071%20RevD.pdf
CY7C4271-15AC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 32KX9 10NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 288K (32K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY8C24033-24PVXI CY8C24633.pdf
CY8C24033-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 56-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY2907FX14 CY2907.pdf
CY2907FX14
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 14-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY29948AC CY29948_RevJ.pdf
CY29948AC
Виробник: Infineon Technologies
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
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CY29948AI CY29948_RevJ.pdf
CY29948AI
Виробник: Infineon Technologies
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
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CY2DP818ZC cy2dp818.pdf
CY2DP818ZC
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
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CY7C1328S-133AXI
CY7C1328S-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
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CY7C1325S-100AXI
CY7C1325S-100AXI
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
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CY7C1324S-133AXC
CY7C1324S-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
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CY7C1320SV18-250BZC
CY7C1320SV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
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CY7C1370SV25-167AXC
CY7C1370SV25-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 72 шт
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CY7C1414TV18-200BZXC
CY7C1414TV18-200BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 36
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CY7C1415TV18-200BZI
CY7C1415TV18-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1440SV33-167AXC
CY7C1440SV33-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1423TV18-267BZXC
CY7C1423TV18-267BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1423TV18-267BZC
CY7C1423TV18-267BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1423SV18-250BZC
CY7C1423SV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY7C1460SV25-167BZXI CYPR-S-A0001754654-1.pdf?t.download=true&u=5oefqw
CY7C1460SV25-167BZXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C4275-15ASC CY7C4275,85.pdf
CY7C4275-15ASC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 32KX18 10NS 64TQFP
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 576K (32K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 50mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY8C272434-24PVXI
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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CY8C271434-24PXI
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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CY8C24423A4-24SXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A4-24SXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C24423A4-24PVXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A4-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C24423A4-24LTXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A4-24LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Bag
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C24123A4-24SXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24123A4-24SXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8SOIC
Packaging: Bag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 6
DigiKey Programmable: Not Verified
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CY8C212234-24SXI
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
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CY8C211234-24SXI
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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CY8C203244-12LQXI
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CY8C202244-12LKXI
Виробник: Infineon Technologies
Description: IC MCU
DigiKey Programmable: Not Verified
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CY7C1327S-166AXC
CY7C1327S-166AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
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CY7C1347S-166BGC
CY7C1347S-166BGC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 840 шт
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