Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149661) > Сторінка 484 з 2495
| Фото | Назва | Виробник | Інформація |
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PSB2161TV1.1 | Infineon Technologies |
Description: ARCOFI-SP AUDIO RINGING CODECPackaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Audio Data Interface: Serial Operating Temperature: -25°C ~ 80°C Voltage - Supply, Analog: 4.75V ~ 5.25V Voltage - Supply, Digital: 4.75V ~ 5.25V Number of ADCs / DACs: 1 / 1 Sigma Delta: No Supplier Device Package: P-DSO-28 Part Status: Active |
на замовлення 5954 шт: термін постачання 21-31 дні (днів) |
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| FS100R12KT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 100A 515WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
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TLE493DP2B6MS2GOTOBO1 | Infineon Technologies |
Description: TLE493D-P2B6MS2GO KITPackaging: Bulk Sensitivity: 15.4LSB/mT, 7.7LSB/mT Interface: I2C Contents: Board(s) Voltage - Supply: 2.8V ~ 3.5V Sensor Type: Magnetic, Hall Effect Utilized IC / Part: TLE493D-P2B6, XMC1100 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: ±160mT |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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XMC13S2Q024X0032ABXUMA1 | Infineon Technologies | Description: 32-BIT INDUSTRIAL MICROCONTROLLE |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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XMC13S2Q024X0016ABXUMA1 | Infineon Technologies | Description: XMC13S2 - 32-BIT INDUSTRIAL MICR |
на замовлення 2646 шт: термін постачання 21-31 дні (днів) |
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XMC1302T038X0128ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 38TSSOP Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1302T038X0128ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 38TSSOP Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 2845 шт: термін постачання 21-31 дні (днів) |
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XMC1302T028X0016ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28TSSOPPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 16KB (16K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XMC1302T028X0016ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28TSSOPPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 16KB (16K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLD22522RCLEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD2252-2EPPackaging: Bulk Voltage - Input: 8V ~ 16V Contents: Board(s) Current - Output / Channel: 120mA Utilized IC / Part: TLD2252-2EP Supplied Contents: Board(s) Outputs and Type: 2 Non-Isolated Outputs |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IPP065N03LGXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EVALIM67D130FLEXKITTOBO1 | Infineon Technologies |
Description: EVAL KIT FOR IM67D130Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM67D130 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BCR431UXTSA1 | Infineon Technologies |
Description: IC LED DRV LIN NO 36.5MA SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 36.5mA Internal Switch(s): Yes Supplier Device Package: PG-SOT23-6 Dimming: No Voltage - Supply (Min): 6V Voltage - Supply (Max): 42 V Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BCR431UXTSA1 | Infineon Technologies |
Description: IC LED DRV LIN NO 36.5MA SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 36.5mA Internal Switch(s): Yes Supplier Device Package: PG-SOT23-6 Dimming: No Voltage - Supply (Min): 6V Voltage - Supply (Max): 42 V Part Status: Active |
на замовлення 6935 шт: термін постачання 21-31 дні (днів) |
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| TTB6C95N16LOF | Infineon Technologies |
Description: SCR MODULE 1.6KV 75A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Bridge, 3-Phase - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz Number of SCRs, Diodes: 6 SCRs Current - On State (It (AV)) (Max): 130 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 75 A Voltage - Off State: 1.6 kV |
на замовлення 236 шт: термін постачання 21-31 дні (днів) |
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BTS54220LBAAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm, 27mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS54220LBAAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm, 27mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS54220LBEAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 5A Ratio - Input:Output: 1:2 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS54220LBFAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24Packaging: Tape & Reel (TR) Package / Case: 24-PowerTDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): 5A Ratio - Input:Output: 1:2 Supplier Device Package: PG-TSON-24-3 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDP12E120XKSA1390 | Infineon Technologies |
Description: IDP12E120 - SILICON POWER DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WLC1115-68LQXQ | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Tray Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
на замовлення 254 шт: термін постачання 21-31 дні (днів) |
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WLC1115-68LQXQT | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Tape & Reel (TR) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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WLC1115-68LQXQT | Infineon Technologies |
Description: WIRELESS CHARGING ICPackaging: Cut Tape (CT) Package / Case: 68-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 87mA Supplier Device Package: PG-VQFN-68 Part Status: Active |
на замовлення 2425 шт: термін постачання 21-31 дні (днів) |
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IPS80R1K4P7 | Infineon Technologies |
Description: IPS80R1K4 - 800V COOLMOS N-CHANN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPS80R750P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 7A TO251-3 |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
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IPS80R2K4P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 2.5A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V |
на замовлення 2945 шт: термін постачання 21-31 дні (днів) |
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| FZ1600R17HP4_B21 | Infineon Technologies |
Description: FZ1600R17 - IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA NTC Thermistor: No Supplier Device Package: AG-IHMB130-2-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 130 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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SAB-80C515A-N18 | Infineon Technologies |
Description: LEGACY 8-BIT MCUPackaging: Bulk Package / Case: 68-LCC (J-Lead) Mounting Type: Surface Mount Speed: 18MHz RAM Size: 1.25K x 8 Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: 80C515 Data Converters: A/D 8x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: UART/USART Peripherals: POR, WDT Supplier Device Package: P-LCC-68 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPF05N03LAG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TO252-3-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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PEB2235PV4.1IPAT | Infineon Technologies |
Description: ISDN PRIMARY ACCESS TRANSCEICERPackaging: Bulk Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Function: ISDN Interface: ISDN Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 190mA Supplier Device Package: P-DIP-28 Part Status: Active Number of Circuits: 32 |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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PEB2075PV1.3-IDEC | Infineon Technologies |
Description: ISDN D-CHANNEL EXCH. CONTROLLERPackaging: Bulk Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Function: ISDN Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 10mA Supplier Device Package: P-DIP-28 Part Status: Active |
на замовлення 1822 шт: термін постачання 21-31 дні (днів) |
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TLS810D1EJV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 100MA 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.65V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 15 µA Qualification: AEC-Q100 |
на замовлення 4067 шт: термін постачання 21-31 дні (днів) |
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BSC883N03LS G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC026N02KSG | Infineon Technologies |
Description: BSC026N02 - 12V-300V N-CHANNEL PPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
на замовлення 27190 шт: термін постачання 21-31 дні (днів) |
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BSC0503NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 22A/88A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
на замовлення 9378 шт: термін постачання 21-31 дні (днів) |
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BSC883N03MSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 34 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V |
на замовлення 73343 шт: термін постачання 21-31 дні (днів) |
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BSC883N03LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 14999 шт: термін постачання 21-31 дні (днів) |
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TLE94104EPXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 2A TSDSO-14Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 825mOhm LS, 825mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2A Technology: Power MOSFET Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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| SAB-C501G-1EM | Infineon Technologies |
Description: LEGACY 8-BIT MCUPackaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: OTP Core Processor: 8051 Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: UART/USART Peripherals: POR Supplier Device Package: P-MQFP-44 Part Status: Active Number of I/O: 32 DigiKey Programmable: Not Verified |
на замовлення 109 шт: термін постачання 21-31 дні (днів) |
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CYW170-01SXC | Infineon Technologies |
Description: IC CLK ZDB 133MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Input: Clock Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BFP420H6740XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 160mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BFP420H6740XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB Power - Max: 160mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
на замовлення 8086 шт: термін постачання 21-31 дні (днів) |
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IRGS4615DTRRPBF | Infineon Technologies |
Description: IGBT 600V 23A 99W D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 30ns/95ns Switching Energy: 70µJ (on), 145µJ (off) Test Condition: 400V, 8A, 47Ohm, 15V Gate Charge: 19 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 24 A Power - Max: 99 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPW90R120C3FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 900V 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.9mA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DEMOBGT60TR13CTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT60TR13CPackaging: Bulk For Use With/Related Products: BGT60TR13C Sensitivity: 60GHz Frequency: 60GHz Type: Transceiver; RADAR Contents: Board(s) Sensor Type: Radar Utilized IC / Part: BGT60TR13C Supplied Contents: Board(s) |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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BSL716SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 2.5A TSOP-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 218µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSL373SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 2A TSOP-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSL806NH6327XTSA1 | Infineon Technologies |
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ011NE2LS5IATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 35A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V |
на замовлення 6901 шт: термін постачання 21-31 дні (днів) |
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ISK024NE2LM5AULA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-VSON-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: 6-PQFN Dual (2x2) Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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ISK024NE2LM5AULA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-VSON-6Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: 6-PQFN Dual (2x2) Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V |
на замовлення 7925 шт: термін постачання 21-31 дні (днів) |
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DDB6U144N16RBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-8111Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: 150°C (TJ) Technology: Standard Supplier Device Package: AG-ECONO2A Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A Current - Reverse Leakage @ Vr: 5 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC037N08NS5TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 22A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 72µA Supplier Device Package: PG-TDSON-8-7 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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BAT165E6874HTMA1 | Infineon Technologies |
Description: DIODE SCHOTT 40V 750MA PGSOD3232Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA Current - Reverse Leakage @ Vr: 50 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD24VL1B-02LRHE6327 | Infineon Technologies |
Description: MULTI-PURPOSE ESD DEVICEPackaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: USB Capacitance @ Frequency: 2.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.3V Voltage - Clamping (Max) @ Ipp: 55V (Typ) Power Line Protection: No Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD24VL1B02LRHE6327XTSA1 | Infineon Technologies |
Description: MULTI-PURPOSE ESD DEVICEPackaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: USB Capacitance @ Frequency: 2.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.3V Voltage - Clamping (Max) @ Ipp: 55V (Typ) Power Line Protection: No |
на замовлення 270000 шт: термін постачання 21-31 дні (днів) |
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BAS4002S-02LRHE6327 | Infineon Technologies |
Description: DIODE SCHOTT 40V 200MA PGTSLP217Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-TSLP-2-17 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 9920 шт: термін постачання 21-31 дні (днів) |
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ESD3V3U1U02LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD300B102LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 18A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10.5V (Typ) Power - Peak Pulse: 260W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD300B102LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 18A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10.5V (Typ) Power - Peak Pulse: 260W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| PSB2161TV1.1 |
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Виробник: Infineon Technologies
Description: ARCOFI-SP AUDIO RINGING CODEC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Audio
Data Interface: Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply, Analog: 4.75V ~ 5.25V
Voltage - Supply, Digital: 4.75V ~ 5.25V
Number of ADCs / DACs: 1 / 1
Sigma Delta: No
Supplier Device Package: P-DSO-28
Part Status: Active
Description: ARCOFI-SP AUDIO RINGING CODEC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Audio
Data Interface: Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply, Analog: 4.75V ~ 5.25V
Voltage - Supply, Digital: 4.75V ~ 5.25V
Number of ADCs / DACs: 1 / 1
Sigma Delta: No
Supplier Device Package: P-DSO-28
Part Status: Active
на замовлення 5954 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 749.20 грн |
| FS100R12KT4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 9093.43 грн |
| TLE493DP2B6MS2GOTOBO1 |
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Виробник: Infineon Technologies
Description: TLE493D-P2B6MS2GO KIT
Packaging: Bulk
Sensitivity: 15.4LSB/mT, 7.7LSB/mT
Interface: I2C
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P2B6, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±160mT
Description: TLE493D-P2B6MS2GO KIT
Packaging: Bulk
Sensitivity: 15.4LSB/mT, 7.7LSB/mT
Interface: I2C
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P2B6, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±160mT
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2052.13 грн |
| XMC13S2Q024X0032ABXUMA1 |
Виробник: Infineon Technologies
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 154+ | 167.95 грн |
| XMC13S2Q024X0016ABXUMA1 |
Виробник: Infineon Technologies
Description: XMC13S2 - 32-BIT INDUSTRIAL MICR
Description: XMC13S2 - 32-BIT INDUSTRIAL MICR
на замовлення 2646 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 154+ | 167.95 грн |
| XMC1302T038X0128ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| XMC1302T038X0128ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.81 грн |
| 10+ | 160.08 грн |
| 25+ | 146.53 грн |
| 100+ | 123.52 грн |
| 250+ | 116.84 грн |
| 500+ | 112.82 грн |
| 1000+ | 107.71 грн |
| XMC1302T028X0016ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 78.04 грн |
| XMC1302T028X0016ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.08 грн |
| 10+ | 118.92 грн |
| 25+ | 108.59 грн |
| 100+ | 91.23 грн |
| 250+ | 86.15 грн |
| 500+ | 83.08 грн |
| 1000+ | 79.24 грн |
| TLD22522RCLEVALTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
Description: EVAL BOARD FOR TLD2252-2EP
Packaging: Bulk
Voltage - Input: 8V ~ 16V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: TLD2252-2EP
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8977.23 грн |
| IPP065N03LGXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
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| EVALIM67D130FLEXKITTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL KIT FOR IM67D130
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D130
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2363.73 грн |
| BCR431UXTSA1 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.85 грн |
| 6000+ | 11.08 грн |
| BCR431UXTSA1 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
Description: IC LED DRV LIN NO 36.5MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 36.5mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT23-6
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42 V
Part Status: Active
на замовлення 6935 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.95 грн |
| 17+ | 18.68 грн |
| 25+ | 16.63 грн |
| 100+ | 13.47 грн |
| 250+ | 12.45 грн |
| 500+ | 11.83 грн |
| 1000+ | 11.14 грн |
| TTB6C95N16LOF |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
на замовлення 236 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 7981.04 грн |
| BTS54220LBAAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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| BTS54220LBAAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TSON-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm, 27mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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| BTS54220LBEAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
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| BTS54220LBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:2 TSON-24
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerTDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSON-24-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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| IDP12E120XKSA1390 |
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Виробник: Infineon Technologies
Description: IDP12E120 - SILICON POWER DIODE
Description: IDP12E120 - SILICON POWER DIODE
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| WLC1115-68LQXQ |
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Виробник: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
на замовлення 254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 426.70 грн |
| 10+ | 313.99 грн |
| 25+ | 289.77 грн |
| 80+ | 250.32 грн |
| 230+ | 235.97 грн |
| WLC1115-68LQXQT |
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Виробник: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 216.42 грн |
| WLC1115-68LQXQT |
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Виробник: Infineon Technologies
Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
Description: WIRELESS CHARGING IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68
Part Status: Active
на замовлення 2425 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 383.95 грн |
| 10+ | 282.96 грн |
| 25+ | 261.11 грн |
| 100+ | 222.50 грн |
| 250+ | 211.77 грн |
| 500+ | 205.30 грн |
| 1000+ | 196.69 грн |
| IPS80R1K4P7 |
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Виробник: Infineon Technologies
Description: IPS80R1K4 - 800V COOLMOS N-CHANN
Description: IPS80R1K4 - 800V COOLMOS N-CHANN
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| IPS80R750P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
Description: MOSFET N-CH 800V 7A TO251-3
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 420+ | 60.84 грн |
| IPS80R2K4P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 848+ | 26.54 грн |
| FZ1600R17HP4_B21 |
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Виробник: Infineon Technologies
Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
Description: FZ1600R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB130-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 79779.67 грн |
| SAB-80C515A-N18 |
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Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 18MHz
RAM Size: 1.25K x 8
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: 80C515
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: P-LCC-68
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IPF05N03LAG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 547+ | 43.29 грн |
| PEB2235PV4.1IPAT |
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Виробник: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: ISDN
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 190mA
Supplier Device Package: P-DIP-28
Part Status: Active
Number of Circuits: 32
на замовлення 84 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 1327.51 грн |
| PEB2075PV1.3-IDEC |
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Виробник: Infineon Technologies
Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
Description: ISDN D-CHANNEL EXCH. CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 10mA
Supplier Device Package: P-DIP-28
Part Status: Active
на замовлення 1822 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 1655.43 грн |
| TLS810D1EJV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
на замовлення 4067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.93 грн |
| 10+ | 81.55 грн |
| 25+ | 74.01 грн |
| 100+ | 61.63 грн |
| 250+ | 57.91 грн |
| 500+ | 55.67 грн |
| 1000+ | 52.94 грн |
| BSC883N03LS G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 916+ | 27.13 грн |
| BSC026N02KSG |
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Виробник: Infineon Technologies
Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Description: BSC026N02 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
на замовлення 27190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 363+ | 68.24 грн |
| BSC0503NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
на замовлення 9378 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.08 грн |
| 10+ | 79.01 грн |
| 100+ | 52.92 грн |
| 500+ | 39.15 грн |
| 1000+ | 35.77 грн |
| 2000+ | 32.92 грн |
| BSC883N03MSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
на замовлення 73343 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 799+ | 29.57 грн |
| BSC883N03LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 14999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 916+ | 26.17 грн |
| TLE94104EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRVR 2A TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 825mOhm LS, 825mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.28 грн |
| 10+ | 107.44 грн |
| 25+ | 97.82 грн |
| 100+ | 81.89 грн |
| 250+ | 77.16 грн |
| 500+ | 74.31 грн |
| 1000+ | 70.78 грн |
| SAB-C501G-1EM |
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Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
на замовлення 109 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 74+ | 310.93 грн |
| CYW170-01SXC |
Виробник: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| BFP420H6740XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.18 грн |
| BFP420H6740XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 8086 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.53 грн |
| 14+ | 23.43 грн |
| 25+ | 20.93 грн |
| 100+ | 17.05 грн |
| 250+ | 15.82 грн |
| 500+ | 15.08 грн |
| 1000+ | 14.23 грн |
| IRGS4615DTRRPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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| IPW90R120C3FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| DEMOBGT60TR13CTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Supplied Contents: Board(s)
Description: EVAL BOARD FOR BGT60TR13C
Packaging: Bulk
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Radar
Utilized IC / Part: BGT60TR13C
Supplied Contents: Board(s)
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15862.04 грн |
| 10+ | 15239.25 грн |
| BSL716SNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
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| BSL373SNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP-6
Description: MOSFET N-CH 100V 2A TSOP-6
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| BSL806NH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
Description: MOSFET 2 N-CH 20V 2.3A TSOP6-6
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| BSZ011NE2LS5IATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
на замовлення 6901 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.79 грн |
| 10+ | 104.35 грн |
| 25+ | 98.49 грн |
| 100+ | 84.88 грн |
| 250+ | 80.34 грн |
| 500+ | 77.13 грн |
| 1000+ | 72.89 грн |
| ISK024NE2LM5AULA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Description: TRENCH <= 40V PG-VSON-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.75 грн |
| 6000+ | 25.45 грн |
| ISK024NE2LM5AULA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Description: TRENCH <= 40V PG-VSON-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 6-PQFN Dual (2x2)
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
на замовлення 7925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.60 грн |
| 10+ | 52.81 грн |
| 100+ | 41.11 грн |
| 500+ | 32.70 грн |
| 1000+ | 26.64 грн |
| DDB6U144N16RBPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Description: LOW POWER ECONO AG-ECONO2A-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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| BSC037N08NS5TATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 208.01 грн |
| 10+ | 181.07 грн |
| 25+ | 161.64 грн |
| 100+ | 136.53 грн |
| 250+ | 121.35 грн |
| 500+ | 106.19 грн |
| 1000+ | 86.54 грн |
| BAT165E6874HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 750MA PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 40V 750MA PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
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| ESD24VL1B-02LRHE6327 |
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Виробник: Infineon Technologies
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
Part Status: Active
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4501+ | 5.76 грн |
| ESD24VL1B02LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
Description: MULTI-PURPOSE ESD DEVICE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
на замовлення 270000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4157+ | 5.29 грн |
| BAS4002S-02LRHE6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 200MA PGTSLP217
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTT 40V 200MA PGTSLP217
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 9920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3406+ | 6.83 грн |
| ESD3V3U1U02LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
Description: TVS DIODE 3.3VWM 28VC TSLP-2-7
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| ESD300B102LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
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| ESD300B102LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 10.5V TSLP-2-17
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 260W
Power Line Protection: No
Part Status: Obsolete
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