Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149325) > Сторінка 484 з 2489
Фото | Назва | Виробник | Інформація |
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ICE5BR3995BZXKLA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 950V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 30 W |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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ICE5BR4780BZXKLA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 27.5 W |
на замовлення 1950 шт: термін постачання 21-31 дні (днів) |
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ICE5BR4780BZXKLA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 27.5 W |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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EVAL5BR4780BZ450MA1TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 450mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE5BR4780BZ Supplied Contents: Board(s) Main Purpose: AC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Active Power - Output: 6.75 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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EVAL5BR3995BZBUCK1TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 18V Voltage - Input: 85 ~ 460 VAC Current - Output: 300mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE5BR3995BZ Supplied Contents: Board(s) Main Purpose: AC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Active Power - Output: 5.4 W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR3995BZ16W1TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V, 12V, 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 900mA, 300mA, 150mA Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR3995BZ Supplied Contents: Board(s) Main Purpose: AC/DC, Non-Isolated Outputs and Type: 3 Non-Isolated Outputs Part Status: Active Power - Output: 16W Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR3995CZ16W1TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V, 5V, 12V Voltage - Input: 85 ~ 460 VAC Current - Output: 1A, 200mA, 200mA Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR3995CZ Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 3 Isolated Outputs Part Status: Active Power - Output: 16W Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR4780BZ15W1TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 5V, 12V, 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 800mA, 300mA, 150mA Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR4780BZ Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 3 Non-Isolated Outputs Part Status: Active Power - Output: 15W Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IGO60R070D1AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
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IGO60R070D1AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGO60R070D1AUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
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IGOT60R070D1AUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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IGT60R070D1E8220ATMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
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В кошику од. на суму грн. | ||||||||||||||
IGOT60R070D1E8220AUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IGO60R070D1E8220AUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FS800R07A2E3BOSA4 | Infineon Technologies |
Description: IGBT MOD ATV 800A HYBRID PACK2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 700 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 52 nF @ 25 V |
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FS770R08A6P2LBBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 654 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
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FS05MR12A6MA1BBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A Supplier Device Package: AG-HYBRIDD-2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS380R12A6T4LBBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent NTC Thermistor: No Supplier Device Package: AG-HYBRIDD-2 Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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RX98-3 | Infineon Technologies | Description: RF TRANSMITTER |
на замовлення 9245 шт: термін постачання 21-31 дні (днів) |
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DD170N36KHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 170A Supplier Device Package: BG-PB34AT-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 3600 V Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A Current - Reverse Leakage @ Vr: 25 mA @ 3600 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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BSM15GP60BOSA1 | Infineon Technologies |
Description: IGBT MODULE 600V 25A 100W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W Current - Collector Cutoff (Max): 500 µA |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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XC8664FRA5VBEAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 140°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 27 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
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TLE7241EXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 240mOhm Voltage - Load: 9V ~ 18V Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V Current - Output (Max): 1.2A Ratio - Input:Output: 1:2 Supplier Device Package: PG-DSO-20-27 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFWINLIFTTLE9855TOBO1 | Infineon Technologies |
Description: WINDOW LIFT REFERENCE DESIGN Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Embedded: Yes, MCU, 32-Bit Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TLE5046ICPWMR100HALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2 Packaging: Bulk Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Obsolete |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TLE5046ICPWMR100HALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2 Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPA60R280P7XKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V |
на замовлення 3701 шт: термін постачання 21-31 дні (днів) |
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IPD65R660CFD | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V |
на замовлення 827 шт: термін постачання 21-31 дні (днів) |
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IPA65R600E6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IP165R660CFD | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPL65R650C6SE8211ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPD65R600E6BTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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T571N65TS16XPSA1 | Infineon Technologies |
Description: HIGH POWER THYR / DIO BG-T7626K0 Packaging: Tray Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FZ1000R33HE3BOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A NTC Thermistor: No IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 1600 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 190 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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T1960N22TOFVTXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1960 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 2.2 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DD171N16KHPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 171A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Current - Reverse Leakage @ Vr: 20 mA @ 1600 V |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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IDB30E120ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 243 ns Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 2432 шт: термін постачання 21-31 дні (днів) |
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IR3567AMGB04TRP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-56-900 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3567AMGB06TRP | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3567AMGB03TRP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-56-900 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3567AMGB01TRP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-56-900 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3567AMGB05TRP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-56-900 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3567AMGB07TRP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-56-900 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I2C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY2292FZX | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: CMOS Frequency - Max: 66.6MHz, 90MHz Type: Clock Generator, Fanout Distribution Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V, 5V Ratio - Input:Output: 1:6 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Verified |
на замовлення 1787 шт: термін постачання 21-31 дні (днів) |
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ISP650P06NMXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C21434-24LTXIAST | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C21434-24LTXIAS | Infineon Technologies |
![]() Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SIPC26N80C3X1SA3 | Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EVALIHR5IPBAV1TOBO1 | Infineon Technologies |
![]() Packaging: Box Type: Power Management Utilized IC / Part: IEWS20R5135IPB Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPI120N06S403AKSA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUA220N08S5N021AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 120µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPU80R750P7AKMA1-ND | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO-251-3-341 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V |
на замовлення 1497 шт: термін постачання 21-31 дні (днів) |
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P2000DL45X168HPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-200AF Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2000A NTC Thermistor: No Supplier Device Package: BG-P16826K-1 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2000 A Voltage - Collector Emitter Breakdown (Max): 4500 V Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 420 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N005AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Ta) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 145µA Supplier Device Package: PG-HSOF-5-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N005AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Ta) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 145µA Supplier Device Package: PG-HSOF-5-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3309 шт: термін постачання 21-31 дні (днів) |
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BTS244ZE3062AATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-5-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 47354 шт: термін постачання 21-31 дні (днів) |
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BBY5806WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Diode Type: 1 Pair Common Anode Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: SOT-323 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 3.5 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SAF-XC878-13FFI5VAC | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 27MHz Program Memory Size: 52KB (52K x 8) RAM Size: 3.25K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-4 Part Status: Active Number of I/O: 40 DigiKey Programmable: Not Verified |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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D255N04BXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: DO-205AA, DO-8, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 255A Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 20 mA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. |
ICE5BR3995BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 157.78 грн |
10+ | 108.32 грн |
50+ | 90.84 грн |
100+ | 80.16 грн |
250+ | 74.79 грн |
500+ | 71.56 грн |
1000+ | 67.76 грн |
ICE5BR4780BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
50+ | 60.88 грн |
100+ | 55.45 грн |
150+ | 53.84 грн |
250+ | 48.87 грн |
350+ | 47.90 грн |
500+ | 46.97 грн |
1250+ | 44.22 грн |
ICE5BR4780BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 98.12 грн |
10+ | 68.94 грн |
25+ | 62.50 грн |
EVAL5BR4780BZ450MA1TOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7971.39 грн |
EVAL5BR3995BZBUCK1TOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8084.43 грн |
REF5BR3995BZ16W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
Contents: Board(s)
Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8319.13 грн |
REF5BR3995CZ16W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
Contents: Board(s)
Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8319.13 грн |
REF5BR4780BZ15W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
Contents: Board(s)
Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7950.20 грн |
IGO60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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IGO60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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IGO60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 1275.23 грн |
IGOT60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 1226.87 грн |
IGT60R070D1E8220ATMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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IGOT60R070D1E8220AUMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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IGO60R070D1E8220AUMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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FS800R07A2E3BOSA4 |
Виробник: Infineon Technologies
Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
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FS770R08A6P2LBBPSA1 |
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Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
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FS05MR12A6MA1BBPSA1 |
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Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
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FS380R12A6T4LBBPSA1 |
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Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 47629.74 грн |
RX98-3 |
Виробник: Infineon Technologies
Description: RF TRANSMITTER
Description: RF TRANSMITTER
на замовлення 9245 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
402+ | 53.82 грн |
DD170N36KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 2500V 98A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 170A
Supplier Device Package: BG-PB34AT-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A
Current - Reverse Leakage @ Vr: 25 mA @ 3600 V
Description: DIODE MODULE GP 2500V 98A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 170A
Supplier Device Package: BG-PB34AT-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A
Current - Reverse Leakage @ Vr: 25 mA @ 3600 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 16292.88 грн |
BSM15GP60BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 25A 100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Description: IGBT MODULE 600V 25A 100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
на замовлення 275 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 5627.46 грн |
XC8664FRA5VBEAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
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TLE7241EXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 240mOhm
Voltage - Load: 9V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-DSO-20-27
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 240mOhm
Voltage - Load: 9V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-DSO-20-27
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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REFWINLIFTTLE9855TOBO1 |
Виробник: Infineon Technologies
Description: WINDOW LIFT REFERENCE DESIGN
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Description: WINDOW LIFT REFERENCE DESIGN
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 24980.95 грн |
TLE5046ICPWMR100HALA1 |
Виробник: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
197+ | 120.10 грн |
TLE5046ICPWMR100HALA1 |
Виробник: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
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IPA60R280P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 3701 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
309+ | 70.23 грн |
IPD65R660CFD |
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Виробник: Infineon Technologies
Description: IPD65R660 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Description: IPD65R660 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
на замовлення 827 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
360+ | 61.67 грн |
IPA65R600E6 |
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Виробник: Infineon Technologies
Description: IPA65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: IPA65R600 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IP165R660CFD |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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IPL65R650C6SE8211ATMA1 |
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Виробник: Infineon Technologies
Description: IPL65R650 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
Description: IPL65R650 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
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IPD65R600E6BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
374+ | 55.21 грн |
T571N65TS16XPSA1 |
Виробник: Infineon Technologies
Description: HIGH POWER THYR / DIO BG-T7626K0
Packaging: Tray
Part Status: Active
Description: HIGH POWER THYR / DIO BG-T7626K0
Packaging: Tray
Part Status: Active
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FZ1000R33HE3BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1000A 1600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Description: IGBT MODULE 3300V 1000A 1600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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T1960N22TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 39312.96 грн |
DD171N16KHPSA2 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GEN PURP 1600V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Description: DIODE MODULE GEN PURP 1600V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
на замовлення 55 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10878.93 грн |
16+ | 9287.68 грн |
IDB30E120ATMA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 2432 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 186.04 грн |
10+ | 115.35 грн |
100+ | 78.98 грн |
500+ | 59.53 грн |
IR3567AMGB04TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
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IR3567AMGB06TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 56VQFN
Description: IC REG BUCK 56VQFN
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IR3567AMGB03TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
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IR3567AMGB01TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
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IR3567AMGB05TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
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IR3567AMGB07TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 2
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CY2292FZX |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 66.6MHz, 90MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Verified
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 66.6MHz, 90MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Verified
на замовлення 1787 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
60+ | 393.27 грн |
ISP650P06NMXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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CY8C21434-24LTXIAST |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C21434-24LTXIAS |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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SIPC26N80C3X1SA3 |
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
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EVALIHR5IPBAV1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL IEWS20R5135IPB
Packaging: Box
Type: Power Management
Utilized IC / Part: IEWS20R5135IPB
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL IEWS20R5135IPB
Packaging: Box
Type: Power Management
Utilized IC / Part: IEWS20R5135IPB
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 17483.68 грн |
IPI120N06S403AKSA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
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IAUA220N08S5N021AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 110.04 грн |
IPU80R750P7AKMA1-ND |
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Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO-251-3-341
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 1497 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
420+ | 55.73 грн |
P2000DL45X168HPSA1 |
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Виробник: Infineon Technologies
Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2000A
NTC Thermistor: No
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2000A
NTC Thermistor: No
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 825074.55 грн |
IAUA250N04S6N005AUMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: OPTIMOS POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 103.43 грн |
IAUA250N04S6N005AUMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: OPTIMOS POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3309 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 224.50 грн |
10+ | 164.79 грн |
100+ | 130.83 грн |
500+ | 114.40 грн |
BTS244ZE3062AATMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 47354 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
111+ | 186.34 грн |
BBY5806WE6327 |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: SOT-323
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: SOT-323
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2308+ | 9.10 грн |
SAF-XC878-13FFI5VAC |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
139+ | 156.40 грн |
D255N04BXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 400V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
Description: DIODE GEN PURP 400V 255A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 255A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.