Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149660) > Сторінка 485 з 2495
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SAKXC2733X20F66LRAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MCU - XC2700 FAMILYPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 160KB (160K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 19x8/10/12b SAR Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-24 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SAF-XE162FN40F80LAAFXQSA1 | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-22 Part Status: Active Number of I/O: 40 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
REFILD8150DC15ASMDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ILD8150Features: Dimmable Packaging: Bulk Voltage - Input: 8V ~ 80V Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: ILD8150 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRF6722STR1PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 13A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6712STR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 17A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6729MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 31A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6714MTR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 29A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6715MTR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 34A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF6720S2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric S1 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V Power Dissipation (Max): 1.7W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: DirectFET™ Isometric S1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BB644E7904 | Infineon Technologies | Description: VARIABLE CAPACITANCE DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
PSB2186PV1.1 | Infineon Technologies |
Description: ISAC-S TE ISDN ACCESS CONTROLLERPackaging: Bulk Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Function: ISDN Interface: 4-Wire, IOM-2 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 17mA Supplier Device Package: P-DIP-40-2 Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPB120N08S403ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 223µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPB120N08S403ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 120A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 223µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BGSX22G6U10E6327XTSA1 | Infineon Technologies |
Description: IC RF SW DPDT 7.125GHZ ULGA10Packaging: Tape & Reel (TR) Package / Case: 10-UFLGA Mounting Type: Surface Mount Circuit: DPDT RF Type: 5G, Cellular, GSM, LTE, WCDMA Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Insertion Loss: 0.85dB Frequency Range: 400MHz ~ 7.125GHz Test Frequency: 5.925GHz ~ 7.125GHz Isolation: 20dB Supplier Device Package: PG-ULGA-10-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BGSX22G6U10E6327XTSA1 | Infineon Technologies |
Description: IC RF SW DPDT 7.125GHZ ULGA10Packaging: Cut Tape (CT) Package / Case: 10-UFLGA Mounting Type: Surface Mount Circuit: DPDT RF Type: 5G, Cellular, GSM, LTE, WCDMA Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Insertion Loss: 0.85dB Frequency Range: 400MHz ~ 7.125GHz Test Frequency: 5.925GHz ~ 7.125GHz Isolation: 20dB Supplier Device Package: PG-ULGA-10-1 |
на замовлення 3426 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IKB30N65ES5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 62A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 62 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 188 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IKB30N65ES5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 62A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 62 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 188 W |
на замовлення 1599 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
XMC1301T038F0032ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 38TSSOP Packaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 2432 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPB50R299CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 550V 12A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPB50R250CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 550V 13A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
IMZA65R039M1HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET, PG-TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Supplier Device Package: PG-TO247-4-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -2V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| FD600R06ME3_B11_S2 | Infineon Technologies |
Description: IGBT MOD 600V 600A 2250WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 2250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 60 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FF300R12KT3EHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 480A 1450WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
T720N16TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1500A DO200ABPackaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 720 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 1.8 kV |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| T720N14TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1500A DO200AB |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| T720N14TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1500A DO200AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 94-2518PBF | Infineon Technologies | Description: IC MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| F3L200R07PE4 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTOPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-ECONO4-1-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 680 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V |
на замовлення 3432 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
SPP04N50C3XKSA1 | Infineon Technologies |
Description: LOW POWER_LEGACYPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BF 775 E6327 | Infineon Technologies |
Description: RF TRANS NPN 15V 5GHZ SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 16dB Power - Max: 280mW Current - Collector (Ic) (Max): 45mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SAFC165HLF | Infineon Technologies |
Description: EMBEDDED UTAH, C166Packaging: Bulk Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 36MHz Program Memory Size: 8MB (8M x 8) RAM Size: 3K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: ROM Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-144-7 Part Status: Active Number of I/O: 72 DigiKey Programmable: Not Verified |
на замовлення 31595 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRF7905TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRF7905TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
IPI80N06S207AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO262-3 Grade: Automotive Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE4953C | Infineon Technologies | Description: HALL EFFECT SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TLE4953CHAMA3 | Infineon Technologies |
Description: MAGNETIC SWITCH SPECIAL PURPOSEPackaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLE4953CHAMA3 | Infineon Technologies |
Description: MAGNETIC SWITCH SPECIAL PURPOSEPackaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
TLE4953HALA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-1Packaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-1 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-1 Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLE4953CBAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-2Packaging: Cut Tape (CT) Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-2 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TLE4953CBAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-2Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-2 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-2 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE4955CE2AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53Packaging: Bulk Package / Case: 2-SIP, SSO-2-53 Output Type: PWM Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4V ~ 20V Technology: Hall Effect Sensing Range: -30mT Trip, 30mT Release Current - Output (Max): 16mA Current - Supply (Max): 8mA Supplier Device Package: PG-SSO-2-53 Test Condition: 25°C Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 41772 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| TLE4955CE2AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-53 Output Type: PWM Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4V ~ 20V Technology: Hall Effect Sensing Range: -30mT Trip, 30mT Release Current - Output (Max): 16mA Current - Supply (Max): 8mA Supplier Device Package: PG-SSO-2-53 Test Condition: 25°C Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4957CE6747HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4957C2E6247HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3Packaging: Bulk Grade: Automotive Qualification: AEC-Q100 |
на замовлення 11780 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| TLE4957C2NE6747HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3Packaging: Bulk Part Status: Obsolete |
на замовлення 47800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| TLE4957C2NE6747HAMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH HALL EFF SSO-3Packaging: Tape & Box (TB) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955HALA1 | Infineon Technologies |
Description: IC SPEED SENSOR MAGN PG-SSO-2Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-53 Mounting Type: Through Hole Supplier Device Package: PG-SSO-2-53 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TLE4955CE41184AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE4954CBE4XTMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955CE4AAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEC PURP SSO-2-53 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955E4HALA1 | Infineon Technologies | Description: IC SPEED SENSOR MAGN PG-SSO-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955CE4807BAMA1 | Infineon Technologies | Description: IC SPEED SENSOR MAGN PG-SSO-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE4955CE11184XAMA1 | Infineon Technologies | Description: SPEED & CURRENT SENSORS PG-SSO-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
CY62148ESL-55ZAXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32STSOPPackaging: Tray Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-sTSOP Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 1603 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PSB21493HV1.7 | Infineon Technologies |
Description: INCA-S CODECPackaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Function: CODEC Interface: IOM-2 Supplier Device Package: P-MQFP-144-8 Part Status: Active Number of Circuits: 1 |
на замовлення 793 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SAF-C167CS-LMCA+ | Infineon Technologies |
Description: LEGACY 16-BIT MCU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
C167SRLMHA | Infineon Technologies |
Description: LEGACY 16-BIT MCU Packaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-8 Part Status: Active Number of I/O: 111 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
XC2286M72F80LRABKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 24x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 118 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SAB-C167CS-LMCA+ | Infineon Technologies |
Description: LEGACY 16-BIT MCUPackaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 11K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 24x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-6 Part Status: Active Number of I/O: 111 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SAF-C167CS-L33MCA+ | Infineon Technologies |
Description: LEGACY 16-BIT MCUPackaging: Bulk Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 33MHz RAM Size: 11K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: 1Y24x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-8 Number of I/O: 111 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| SAKXC2733X20F66LRAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MCU - XC2700 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x8/10/12b SAR
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, SPI, UART/USART
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-24
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SAF-XE162FN40F80LAAFXQSA1 |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FIFO, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| REFILD8150DC15ASMDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Bulk
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR ILD8150
Features: Dimmable
Packaging: Bulk
Voltage - Input: 8V ~ 80V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD8150
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5501.93 грн |
| IRF6722STR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET
Description: MOSFET N-CH 30V 13A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6712STR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
Description: MOSFET N-CH 25V 17A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6729MTRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 31A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
Description: MOSFET N-CH 30V 31A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 31A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6030 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF6714MTR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 29A DIRECTFET
Description: MOSFET N-CH 25V 29A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6715MTR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 34A DIRECTFET
Description: MOSFET N-CH 25V 34A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF6720S2TR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
Description: MOSFET N-CH 30V 11A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| BB644E7904 |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Description: VARIABLE CAPACITANCE DIODE
товару немає в наявності
В кошику
од. на суму грн.
| PSB2186PV1.1 |
![]() |
Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-DIP-40-2
Part Status: Active
Number of Circuits: 1
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-DIP-40-2
Part Status: Active
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| IPB120N08S403ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| IPB120N08S403ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 223µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BGSX22G6U10E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF SW DPDT 7.125GHZ ULGA10
Packaging: Tape & Reel (TR)
Package / Case: 10-UFLGA
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 0.85dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 20dB
Supplier Device Package: PG-ULGA-10-1
Description: IC RF SW DPDT 7.125GHZ ULGA10
Packaging: Tape & Reel (TR)
Package / Case: 10-UFLGA
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 0.85dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 20dB
Supplier Device Package: PG-ULGA-10-1
товару немає в наявності
В кошику
од. на суму грн.
| BGSX22G6U10E6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF SW DPDT 7.125GHZ ULGA10
Packaging: Cut Tape (CT)
Package / Case: 10-UFLGA
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 0.85dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 20dB
Supplier Device Package: PG-ULGA-10-1
Description: IC RF SW DPDT 7.125GHZ ULGA10
Packaging: Cut Tape (CT)
Package / Case: 10-UFLGA
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: 5G, Cellular, GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Insertion Loss: 0.85dB
Frequency Range: 400MHz ~ 7.125GHz
Test Frequency: 5.925GHz ~ 7.125GHz
Isolation: 20dB
Supplier Device Package: PG-ULGA-10-1
на замовлення 3426 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.75 грн |
| 10+ | 35.23 грн |
| 25+ | 33.19 грн |
| 100+ | 28.50 грн |
| 250+ | 26.92 грн |
| 500+ | 25.79 грн |
| 1000+ | 24.33 грн |
| IKB30N65ES5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 89.96 грн |
| IKB30N65ES5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 258.98 грн |
| 10+ | 163.41 грн |
| 100+ | 114.32 грн |
| 500+ | 94.47 грн |
| XMC1301T038F0032ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 185.81 грн |
| 10+ | 133.01 грн |
| 25+ | 121.48 грн |
| 100+ | 102.06 грн |
| 250+ | 96.37 грн |
| 500+ | 92.94 грн |
| 1000+ | 88.64 грн |
| IPB50R299CPATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPB50R250CPATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Description: MOSFET N-CH 550V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IMZA65R039M1HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 910.14 грн |
| 30+ | 699.56 грн |
| FD600R06ME3_B11_S2 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FF300R12KT3EHOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: IGBT MOD 1200V 480A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| T720N16TOFXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11241.47 грн |
| T720N14TOFXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Description: SCR MODULE 1800V 1500A DO200AB
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 9956.70 грн |
| T720N14TOFXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Description: SCR MODULE 1800V 1500A DO200AB
товару немає в наявності
В кошику
од. на суму грн.
| 94-2518PBF |
Виробник: Infineon Technologies
Description: IC MOSFET
Description: IC MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| F3L200R07PE4 |
![]() |
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 13486.81 грн |
| SPP04N50C3XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BF 775 E6327 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| SAFC165HLF |
![]() |
Виробник: Infineon Technologies
Description: EMBEDDED UTAH, C166
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROM
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V
Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Active
Number of I/O: 72
DigiKey Programmable: Not Verified
Description: EMBEDDED UTAH, C166
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROM
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V
Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Active
Number of I/O: 72
DigiKey Programmable: Not Verified
на замовлення 31595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 1087.52 грн |
| IRF7905TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRF7905TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IPI80N06S207AKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TLE4953C |
Виробник: Infineon Technologies
Description: HALL EFFECT SENSOR
Description: HALL EFFECT SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| TLE4953CHAMA3 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.08 грн |
| 5+ | 142.35 грн |
| 10+ | 135.62 грн |
| 25+ | 119.86 грн |
| 50+ | 114.78 грн |
| 100+ | 110.15 грн |
| 500+ | 99.16 грн |
| TLE4953CHAMA3 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
товару немає в наявності
В кошику
од. на суму грн.
| TLE4953HALA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Description: MAG SWITCH SPEC PURP SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 463.70 грн |
| 10+ | 334.66 грн |
| 25+ | 297.49 грн |
| 50+ | 265.23 грн |
| 100+ | 258.25 грн |
| 500+ | 216.37 грн |
| 1000+ | 199.09 грн |
| TLE4953CBAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4953CBAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE2AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 41772 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 126+ | 183.23 грн |
| TLE4955CE2AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4957CE6747HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Description: MAGNETIC SWITCH HALL EFF SSO-3
товару немає в наявності
В кошику
од. на суму грн.
| TLE4957C2E6247HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 164.83 грн |
| TLE4957C2NE6747HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
на замовлення 47800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 176+ | 131.51 грн |
| TLE4957C2NE6747HAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955HALA1 |
![]() |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
Description: IC SPEED SENSOR MAGN PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE41184AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товару немає в наявності
В кошику
од. на суму грн.
| TLE4954CBE4XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE4AAMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Description: MAG SWITCH SPEC PURP SSO-2-53
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955E4HALA1 |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Description: IC SPEED SENSOR MAGN PG-SSO-2
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE4807BAMA1 |
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Description: IC SPEED SENSOR MAGN PG-SSO-2
товару немає в наявності
В кошику
од. на суму грн.
| TLE4955CE11184XAMA1 |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Description: SPEED & CURRENT SENSORS PG-SSO-2
товару немає в наявності
В кошику
од. на суму грн.
| CY62148ESL-55ZAXI |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1603 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 526.19 грн |
| 10+ | 450.01 грн |
| 25+ | 429.17 грн |
| 40+ | 393.06 грн |
| 80+ | 379.21 грн |
| 230+ | 358.98 грн |
| 440+ | 341.38 грн |
| 945+ | 337.85 грн |
| PSB21493HV1.7 |
![]() |
Виробник: Infineon Technologies
Description: INCA-S CODEC
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Function: CODEC
Interface: IOM-2
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of Circuits: 1
Description: INCA-S CODEC
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Function: CODEC
Interface: IOM-2
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of Circuits: 1
на замовлення 793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 1404.16 грн |
| SAF-C167CS-LMCA+ |
![]() |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Description: LEGACY 16-BIT MCU
товару немає в наявності
В кошику
од. на суму грн.
| C167SRLMHA |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
товару немає в наявності
В кошику
од. на суму грн.
| XC2286M72F80LRABKXUMA1 |
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SAB-C167CS-LMCA+ |
![]() |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
товару немає в наявності
В кошику
од. на суму грн.
| SAF-C167CS-L33MCA+ |
![]() |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: 1Y24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: 1Y24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.





























