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IRLR3714ZTRL IRLR3714ZTRL Infineon Technologies irlr3714z.pdf Description: MOSFET N-CH 20V 37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
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IRLR3714ZTRL IRLR3714ZTRL Infineon Technologies irlr3714z.pdf Description: MOSFET N-CH 20V 37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
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IQE050N08NM5CGSCATMA1 IQE050N08NM5CGSCATMA1 Infineon Technologies Infineon-IQE050N08NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cda8ea797c52 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
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IQE050N08NM5CGSCATMA1 IQE050N08NM5CGSCATMA1 Infineon Technologies Infineon-IQE050N08NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cda8ea797c52 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
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IQE030N06NM5CGSCATMA1 IQE030N06NM5CGSCATMA1 Infineon Technologies Infineon-IQE030N06NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cd4d5afe30ca Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
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IQE030N06NM5CGSCATMA1 IQE030N06NM5CGSCATMA1 Infineon Technologies Infineon-IQE030N06NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cd4d5afe30ca Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
на замовлення 5902 шт:
термін постачання 21-31 дні (днів)
2+241.71 грн
10+168.65 грн
100+118.06 грн
500+90.51 грн
1000+83.99 грн
2000+82.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE006NE2LM5CGSCATMA1 IQE006NE2LM5CGSCATMA1 Infineon Technologies Infineon-IQE006NE2LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c82701863e47 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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IQE006NE2LM5CGSCATMA1 IQE006NE2LM5CGSCATMA1 Infineon Technologies Infineon-IQE006NE2LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c82701863e47 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 8277 шт:
термін постачання 21-31 дні (днів)
2+188.71 грн
10+126.89 грн
100+88.76 грн
500+68.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE013N04LM6CGSCATMA1 IQE013N04LM6CGSCATMA1 Infineon Technologies Infineon-IQE013N04LM6CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c939a6372596 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
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IQE013N04LM6CGSCATMA1 IQE013N04LM6CGSCATMA1 Infineon Technologies Infineon-IQE013N04LM6CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c939a6372596 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
на замовлення 5623 шт:
термін постачання 21-31 дні (днів)
2+214.41 грн
10+137.33 грн
100+95.70 грн
500+76.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE065N10NM5CGSCATMA1 IQE065N10NM5CGSCATMA1 Infineon Technologies Infineon-IQE065N10NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d23cd7330500 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
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IQE065N10NM5CGSCATMA1 IQE065N10NM5CGSCATMA1 Infineon Technologies Infineon-IQE065N10NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d23cd7330500 Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
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CYPD3195-24LDXS CYPD3195-24LDXS Infineon Technologies Infineon-CYPD3196-24LDXS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180284d7c487f3d Description: CCG3PA
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
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CYT3BBBCEBQ0BZEGS CYT3BBBCEBQ0BZEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+/M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
DigiKey Programmable: Not Verified
на замовлення 596 шт:
термін постачання 21-31 дні (днів)
1+2270.13 грн
10+1766.32 грн
25+1661.49 грн
96+1453.75 грн
288+1392.76 грн
480+1370.23 грн
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CYT3BBBCEBQ0BZSGS Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
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CYT3BBBCEBQ0BZEGST CYT3BBBCEBQ0BZEGST Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
DigiKey Programmable: Not Verified
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CYT4BB5CEBQ0AESGST Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT4BB5CEBQ0AEEGS Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT4BB5CEBQ0AEEGST Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT3BBBCEBQ0BZSGST Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
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CYT4BB5CEBQ0AESGS Infineon Technologies Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342 Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT4A0100DQ0AESGS Infineon Technologies Description: Auto MCU
Packaging: Tray
Part Status: Active
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XC164CM8F40FAAKXQMA1 Infineon Technologies xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t Description: IC MCU 16BIT 64KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 47
DigiKey Programmable: Not Verified
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XC164CM8F40FAAFXQMA1 Infineon Technologies xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t Description: IC MCU 16BIT 64KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 47
DigiKey Programmable: Not Verified
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FF1800R23IE7PBPSA1 FF1800R23IE7PBPSA1 Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: PrimePACK™ 3+
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+138053.12 грн
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IRF8734PBF IRF8734PBF Infineon Technologies irf8734pbf.pdf?fileId=5546d462533600a40153560d97fd1d7d description Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 15 V
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S29GL01GT10TFI020 S29GL01GT10TFI020 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
1+1109.77 грн
10+991.73 грн
25+960.78 грн
40+886.77 грн
91+860.98 грн
273+827.07 грн
455+798.28 грн
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CY9BF122LQN-G-AVERE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
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CY9BF124KPMC-G-MNE2 CY9BF124KPMC-G-MNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+423.99 грн
10+314.88 грн
25+291.40 грн
80+254.26 грн
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CY9BF122MPMC-G-MNE2 CY9BF122MPMC-G-MNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
на замовлення 1290 шт:
термін постачання 21-31 дні (днів)
1+541.23 грн
10+403.19 грн
25+373.59 грн
119+317.05 грн
357+300.85 грн
595+294.86 грн
1071+284.22 грн
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CY9BF124LPMC1-G-MNE2 CY9BF124LPMC1-G-MNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+535.61 грн
10+397.62 грн
25+368.23 грн
160+307.36 грн
320+297.47 грн
640+289.33 грн
1120+279.17 грн
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CY9BF122MBGL-GK9E1 CY9BF122MBGL-GK9E1 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 160KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
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S70KL1283GABHI023 S70KL1283GABHI023 Infineon Technologies Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9 Description: IC PSRAM 128MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IKW03N120H2FKSA1 IKW03N120H2FKSA1 Infineon Technologies IK(P,W)03N120H2.pdf Description: IGBT 1200V 9.6A 62.5W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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XMC1100T038X0064AAXUMA1 XMC1100T038X0064AAXUMA1 Infineon Technologies XMC1100.pdf Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1100T038X0064AAXUMA1 XMC1100T038X0064AAXUMA1 Infineon Technologies XMC1100.pdf Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 26
DigiKey Programmable: Not Verified
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IPA65R125C7 IPA65R125C7 Infineon Technologies INFNS30020-1.pdf?t.download=true&u=5oefqw Description: IPA65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
111+217.62 грн
Мінімальне замовлення: 111
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TLD2310ELXUMA1 TLD2310ELXUMA1 Infineon Technologies Infineon-TLD2310EL-DataSheet-v01_02-EN.pdf?fileId=5546d46258fc0bc101596e40df883547 Description: TLD2310-ChannHigh-SiCurreSource
Packaging: Tape & Reel (TR)
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)
420+53.33 грн
Мінімальне замовлення: 420
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IRFHM8228TRPBF IRFHM8228TRPBF Infineon Technologies IRFHM8228%28TR%29PBF.pdf Description: MOSFET N-CH 25V 19A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 10 V
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IRFHM8235TRPBF IRFHM8235TRPBF Infineon Technologies IRFHM8235%28TR%29PBF.pdf Description: MOSFET N-CH 25V 16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 10 V
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IRFHM8337TRPBF IRFHM8337TRPBF Infineon Technologies IRFHM8337%28TR%29PBF.pdf Description: MOSFET N-CH 30V 12A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
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IRFHM8337TRPBF IRFHM8337TRPBF Infineon Technologies IRFHM8337%28TR%29PBF.pdf Description: MOSFET N-CH 30V 12A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
товару немає в наявності
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IRFHM8334TRPBF IRFHM8334TRPBF Infineon Technologies IRFHM8334TRPBF.pdf Description: MOSFET N-CH 30V 13A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
товару немає в наявності
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IRFHM8334TRPBF IRFHM8334TRPBF Infineon Technologies IRFHM8334TRPBF.pdf Description: MOSFET N-CH 30V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
товару немає в наявності
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EVAL2ED2101HBLLCTOBO2 EVAL2ED2101HBLLCTOBO2 Infineon Technologies Infineon-UG2021-02_EVAL-2ED2101-HB-LLC-UserManual-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3df9183b2104 Description: EVAL BOARD FOR 2ED2101S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2101S, 2ED24427N
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+21206.08 грн
В кошику  од. на суму  грн.
EVAL4KVA230VAC5LINVTOBO1 EVAL4KVA230VAC5LINVTOBO1 Infineon Technologies Infineon-Evaluationboard_EVAL_4KVA_230VAC_5LINV-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a0172eb34ef6f7385 Description: EVAL BOARD FOR 2EDF7275F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 2EDF7275F, XMC7400
Supplied Contents: Board(s)
Primary Attributes: 380V ~ 420V Supply
Embedded: Yes, MCU, 32-Bit
Contents: Board(s)
товару немає в наявності
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CY62148EV30LL-45ZSXIT CY62148EV30LL-45ZSXIT Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+316.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY62148EV30LL-45ZSXIT CY62148EV30LL-45ZSXIT Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
1+452.10 грн
10+386.87 грн
25+369.04 грн
50+334.14 грн
100+322.35 грн
250+307.39 грн
500+291.65 грн
В кошику  од. на суму  грн.
CY62148EV30LL-45ZSXI CY62148EV30LL-45ZSXI Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
1+432.83 грн
10+387.33 грн
25+375.69 грн
40+346.97 грн
117+334.17 грн
234+325.97 грн
468+312.65 грн
В кошику  од. на суму  грн.
CY62148EV30LL-45BVXI CY62148EV30LL-45BVXI Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Tray
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 4506 шт:
термін постачання 21-31 дні (днів)
1+358.15 грн
10+314.80 грн
25+308.75 грн
40+287.68 грн
80+284.22 грн
В кошику  од. на суму  грн.
CY62148EV30LL-55SXIT CY62148EV30LL-55SXIT Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+345.73 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY62148EV30LL-55SXIT CY62148EV30LL-55SXIT Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+495.46 грн
10+422.98 грн
25+403.34 грн
50+365.14 грн
100+352.22 грн
250+335.83 грн
500+318.62 грн
В кошику  од. на суму  грн.
CY62148EV30LL-55SXI CY62148EV30LL-55SXI Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+495.46 грн
10+422.98 грн
25+403.34 грн
50+365.14 грн
100+352.22 грн
250+335.83 грн
500+318.62 грн
В кошику  од. на суму  грн.
CY8C4248BZI-L489 CY8C4248BZI-L489 Infineon Technologies Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 256KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 98
DigiKey Programmable: Not Verified
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
1+1014.21 грн
10+768.64 грн
25+716.70 грн
80+626.40 грн
260+592.67 грн
520+577.47 грн
В кошику  од. на суму  грн.
CY2302SXI-1 CY2302SXI-1 Infineon Technologies CY2302.pdf Description: IC FANOUT DIST 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz
Type: Fanout Distribution, Frequency Multiplier, Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
1+670.52 грн
10+501.70 грн
97+426.72 грн
В кошику  од. на суму  грн.
FM31256-GTR FM31256-GTR Infineon Technologies Infineon-FM3164_FM31256_64-Kbit_256-Kbit_Integrated_Processor_Companion_with_F-RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9d444421b Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM31256-GTR FM31256-GTR Infineon Technologies Infineon-FM3164_FM31256_64-Kbit_256-Kbit_Integrated_Processor_Companion_with_F-RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9d444421b Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
1+1244.68 грн
10+1063.41 грн
25+1013.95 грн
50+917.88 грн
100+885.38 грн
250+844.11 грн
В кошику  од. на суму  грн.
FM31256-G FM31256-G Infineon Technologies Infineon-FM3164_FM31256_64-Kbit_256-Kbit_Integrated_Processor_Companion_with_F-RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9d444421b Description: IC PROCESSOR COMPANION 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
1+896.97 грн
10+800.50 грн
25+775.44 грн
56+707.15 грн
112+689.65 грн
280+666.86 грн
504+646.39 грн
В кошику  од. на суму  грн.
AUIRF7738L2TR AUIRF7738L2TR Infineon Technologies auirf7738l2.pdf?fileId=5546d462533600a4015355b09e161405 Description: MOSFET N-CH 40V 35A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 109A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DIRECTFET L6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7471 pF @ 25 V
товару немає в наявності
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CY7C1543KV18-400BZI CY7C1543KV18-400BZI Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
5+27889.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRLR3714ZTRL irlr3714z.pdf
IRLR3714ZTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
товару немає в наявності
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IRLR3714ZTRL irlr3714z.pdf
IRLR3714ZTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
товару немає в наявності
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IQE050N08NM5CGSCATMA1 Infineon-IQE050N08NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cda8ea797c52
IQE050N08NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
товару немає в наявності
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IQE050N08NM5CGSCATMA1 Infineon-IQE050N08NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cda8ea797c52
IQE050N08NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
товару немає в наявності
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IQE030N06NM5CGSCATMA1 Infineon-IQE030N06NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cd4d5afe30ca
IQE030N06NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
товару немає в наявності
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IQE030N06NM5CGSCATMA1 Infineon-IQE030N06NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181cd4d5afe30ca
IQE030N06NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
на замовлення 5902 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+241.71 грн
10+168.65 грн
100+118.06 грн
500+90.51 грн
1000+83.99 грн
2000+82.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE006NE2LM5CGSCATMA1 Infineon-IQE006NE2LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c82701863e47
IQE006NE2LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
товару немає в наявності
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IQE006NE2LM5CGSCATMA1 Infineon-IQE006NE2LM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c82701863e47
IQE006NE2LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 8277 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+188.71 грн
10+126.89 грн
100+88.76 грн
500+68.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE013N04LM6CGSCATMA1 Infineon-IQE013N04LM6CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c939a6372596
IQE013N04LM6CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
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IQE013N04LM6CGSCATMA1 Infineon-IQE013N04LM6CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181c939a6372596
IQE013N04LM6CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
на замовлення 5623 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+214.41 грн
10+137.33 грн
100+95.70 грн
500+76.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE065N10NM5CGSCATMA1 Infineon-IQE065N10NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d23cd7330500
IQE065N10NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
товару немає в наявності
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IQE065N10NM5CGSCATMA1 Infineon-IQE065N10NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d23cd7330500
IQE065N10NM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
товару немає в наявності
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CYPD3195-24LDXS Infineon-CYPD3196-24LDXS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180284d7c487f3d
CYPD3195-24LDXS
Виробник: Infineon Technologies
Description: CCG3PA
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 24.5V
Program Memory Type: FLASH (64kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
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CYT3BBBCEBQ0BZEGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT3BBBCEBQ0BZEGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+/M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
DigiKey Programmable: Not Verified
на замовлення 596 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2270.13 грн
10+1766.32 грн
25+1661.49 грн
96+1453.75 грн
288+1392.76 грн
480+1370.23 грн
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CYT3BBBCEBQ0BZSGS Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
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CYT3BBBCEBQ0BZEGST Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
CYT3BBBCEBQ0BZEGST
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
DigiKey Programmable: Not Verified
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CYT4BB5CEBQ0AESGST Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT4BB5CEBQ0AEEGS Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT4BB5CEBQ0AEEGST Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT3BBBCEBQ0BZSGST Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
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CYT4BB5CEBQ0AESGS Infineon-TRAVEO_T2G_automotive_microcontroller_CYT3BB_4BB_32-BIT_ARM_CORTEX-M7-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea49a27342
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 55x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 100-TEQFP (14x14)
Part Status: Active
Number of I/O: 72
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CYT4A0100DQ0AESGS
Виробник: Infineon Technologies
Description: Auto MCU
Packaging: Tray
Part Status: Active
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XC164CM8F40FAAKXQMA1 xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 47
DigiKey Programmable: Not Verified
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XC164CM8F40FAAFXQMA1 xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 47
DigiKey Programmable: Not Verified
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FF1800R23IE7PBPSA1
FF1800R23IE7PBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: PrimePACK™ 3+
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+138053.12 грн
В кошику  од. на суму  грн.
IRF8734PBF description irf8734pbf.pdf?fileId=5546d462533600a40153560d97fd1d7d
IRF8734PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 15 V
товару немає в наявності
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S29GL01GT10TFI020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10TFI020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1109.77 грн
10+991.73 грн
25+960.78 грн
40+886.77 грн
91+860.98 грн
273+827.07 грн
455+798.28 грн
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CY9BF122LQN-G-AVERE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
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CY9BF124KPMC-G-MNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF124KPMC-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+423.99 грн
10+314.88 грн
25+291.40 грн
80+254.26 грн
В кошику  од. на суму  грн.
CY9BF122MPMC-G-MNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF122MPMC-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
на замовлення 1290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+541.23 грн
10+403.19 грн
25+373.59 грн
119+317.05 грн
357+300.85 грн
595+294.86 грн
1071+284.22 грн
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CY9BF124LPMC1-G-MNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF124LPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+535.61 грн
10+397.62 грн
25+368.23 грн
160+307.36 грн
320+297.47 грн
640+289.33 грн
1120+279.17 грн
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CY9BF122MBGL-GK9E1 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF122MBGL-GK9E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
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S70KL1283GABHI023 Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9
S70KL1283GABHI023
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IKW03N120H2FKSA1 IK(P,W)03N120H2.pdf
IKW03N120H2FKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 9.6A 62.5W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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XMC1100T038X0064AAXUMA1 XMC1100.pdf
XMC1100T038X0064AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1100T038X0064AAXUMA1 XMC1100.pdf
XMC1100T038X0064AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 26
DigiKey Programmable: Not Verified
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IPA65R125C7 INFNS30020-1.pdf?t.download=true&u=5oefqw
IPA65R125C7
Виробник: Infineon Technologies
Description: IPA65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
111+217.62 грн
Мінімальне замовлення: 111
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TLD2310ELXUMA1 Infineon-TLD2310EL-DataSheet-v01_02-EN.pdf?fileId=5546d46258fc0bc101596e40df883547
TLD2310ELXUMA1
Виробник: Infineon Technologies
Description: TLD2310-ChannHigh-SiCurreSource
Packaging: Tape & Reel (TR)
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
420+53.33 грн
Мінімальне замовлення: 420
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IRFHM8228TRPBF IRFHM8228%28TR%29PBF.pdf
IRFHM8228TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 19A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 10 V
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IRFHM8235TRPBF IRFHM8235%28TR%29PBF.pdf
IRFHM8235TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 10 V
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IRFHM8337TRPBF IRFHM8337%28TR%29PBF.pdf
IRFHM8337TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
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IRFHM8337TRPBF IRFHM8337%28TR%29PBF.pdf
IRFHM8337TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
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IRFHM8334TRPBF IRFHM8334TRPBF.pdf
IRFHM8334TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
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IRFHM8334TRPBF IRFHM8334TRPBF.pdf
IRFHM8334TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
товару немає в наявності
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EVAL2ED2101HBLLCTOBO2 Infineon-UG2021-02_EVAL-2ED2101-HB-LLC-UserManual-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a3df9183b2104
EVAL2ED2101HBLLCTOBO2
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2ED2101S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2101S, 2ED24427N
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+21206.08 грн
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EVAL4KVA230VAC5LINVTOBO1 Infineon-Evaluationboard_EVAL_4KVA_230VAC_5LINV-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a0172eb34ef6f7385
EVAL4KVA230VAC5LINVTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EDF7275F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 2EDF7275F, XMC7400
Supplied Contents: Board(s)
Primary Attributes: 380V ~ 420V Supply
Embedded: Yes, MCU, 32-Bit
Contents: Board(s)
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CY62148EV30LL-45ZSXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+316.47 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY62148EV30LL-45ZSXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+452.10 грн
10+386.87 грн
25+369.04 грн
50+334.14 грн
100+322.35 грн
250+307.39 грн
500+291.65 грн
В кошику  од. на суму  грн.
CY62148EV30LL-45ZSXI Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+432.83 грн
10+387.33 грн
25+375.69 грн
40+346.97 грн
117+334.17 грн
234+325.97 грн
468+312.65 грн
В кошику  од. на суму  грн.
CY62148EV30LL-45BVXI Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-45BVXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Tray
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 4506 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+358.15 грн
10+314.80 грн
25+308.75 грн
40+287.68 грн
80+284.22 грн
В кошику  од. на суму  грн.
CY62148EV30LL-55SXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-55SXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+345.73 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY62148EV30LL-55SXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-55SXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+495.46 грн
10+422.98 грн
25+403.34 грн
50+365.14 грн
100+352.22 грн
250+335.83 грн
500+318.62 грн
В кошику  од. на суму  грн.
CY62148EV30LL-55SXI Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-55SXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+495.46 грн
10+422.98 грн
25+403.34 грн
50+365.14 грн
100+352.22 грн
250+335.83 грн
500+318.62 грн
В кошику  од. на суму  грн.
CY8C4248BZI-L489 Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4248BZI-L489
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Part Status: Active
Number of I/O: 98
DigiKey Programmable: Not Verified
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1014.21 грн
10+768.64 грн
25+716.70 грн
80+626.40 грн
260+592.67 грн
520+577.47 грн
В кошику  од. на суму  грн.
CY2302SXI-1 CY2302.pdf
CY2302SXI-1
Виробник: Infineon Technologies
Description: IC FANOUT DIST 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz
Type: Fanout Distribution, Frequency Multiplier, Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+670.52 грн
10+501.70 грн
97+426.72 грн
В кошику  од. на суму  грн.
FM31256-GTR Infineon-FM3164_FM31256_64-Kbit_256-Kbit_Integrated_Processor_Companion_with_F-RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9d444421b
FM31256-GTR
Виробник: Infineon Technologies
Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM31256-GTR Infineon-FM3164_FM31256_64-Kbit_256-Kbit_Integrated_Processor_Companion_with_F-RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9d444421b
FM31256-GTR
Виробник: Infineon Technologies
Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 427 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1244.68 грн
10+1063.41 грн
25+1013.95 грн
50+917.88 грн
100+885.38 грн
250+844.11 грн
В кошику  од. на суму  грн.
FM31256-G Infineon-FM3164_FM31256_64-Kbit_256-Kbit_Integrated_Processor_Companion_with_F-RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9d444421b
FM31256-G
Виробник: Infineon Technologies
Description: IC PROCESSOR COMPANION 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+896.97 грн
10+800.50 грн
25+775.44 грн
56+707.15 грн
112+689.65 грн
280+666.86 грн
504+646.39 грн
В кошику  од. на суму  грн.
AUIRF7738L2TR auirf7738l2.pdf?fileId=5546d462533600a4015355b09e161405
AUIRF7738L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 35A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 109A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DIRECTFET L6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7471 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1543KV18-400BZI download
CY7C1543KV18-400BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+27889.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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