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CY22393ZXI-510 CY22393ZXI-510 Infineon Technologies CY22393-95,CY223931.pdf Description: IC CLOCK GEN PROG 16TSSOP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
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SLS32AIA020X2USON10XTMA4 SLS32AIA020X2USON10XTMA4 Infineon Technologies Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9 Description: OPTIGA TRUST
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Embedded Security Trusted Computing
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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SI4420DY SI4420DY Infineon Technologies si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981 Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
товару немає в наявності
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CY62126EV30LL-45BVXI CY62126EV30LL-45BVXI Infineon Technologies CY62126EV30_RevH.pdf Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
2+237.60 грн
10+202.88 грн
25+193.47 грн
40+177.20 грн
80+170.94 грн
230+161.82 грн
480+153.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FS30R06W1E3BOMA1 FS30R06W1E3BOMA1 Infineon Technologies Infineon-FS30R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113cecd4c3102c1 Description: IGBT MODULE 600V 60A 150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+2766.84 грн
24+1794.01 грн
В кошику  од. на суму  грн.
FS20R06W1E3BOMA1 FS20R06W1E3BOMA1 Infineon Technologies Infineon-FS20R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b50a7b000552 Description: IGBT MODULE 600V 35A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+2088.97 грн
24+1331.81 грн
В кошику  од. на суму  грн.
FS35R12W1T4BOMA1 FS35R12W1T4BOMA1 Infineon Technologies Infineon-FS35R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4be783c0543 Description: IGBT MOD 1200V 65A 225W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
1+2546.28 грн
24+1655.25 грн
120+1608.33 грн
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FS50R12KT4PB11BPSA1 FS50R12KT4PB11BPSA1 Infineon Technologies Infineon-FS50R12KT4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015dcbe0274c7cb4 Description: IGBT MOD 1200V 100A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+6218.37 грн
В кошику  од. на суму  грн.
FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 Infineon Technologies Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72 Description: MEDIUM POWER ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+61689.82 грн
В кошику  од. на суму  грн.
FP75R12N2T4B86BPSA1 Infineon Technologies infineon-fp75r12n2t4-ds-ja.pdf?fileId=5546d462689a790c016939d8a1586b47 Description: IGBT MOD 1200V 75A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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FP75R17N3E4B20BPSA1 FP75R17N3E4B20BPSA1 Infineon Technologies infineon-fs75r17w2e4p-b11-datasheet-en.pdf Description: IGBT MODULE 1700V 150A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+8114.03 грн
10+6583.51 грн
В кошику  од. на суму  грн.
FS15R12YT3BOMA1 FS15R12YT3BOMA1 Infineon Technologies Description: IGBT MOD 1200V 25A 110W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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S6E1C32D0AGV20000 S6E1C32D0AGV20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART, USB
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+363.63 грн
10+314.90 грн
25+297.65 грн
160+242.08 грн
320+229.67 грн
480+206.08 грн
960+170.95 грн
В кошику  од. на суму  грн.
S6E1C32D0AGN20000 S6E1C32D0AGN20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
товару немає в наявності
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S6E1C32D0AGN20050 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 54
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IPG20N06S2L65AUMA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
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S25FL512SAGBHIS10 S25FL512SAGBHIS10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 2781 шт:
термін постачання 21-31 дні (днів)
1+390.03 грн
10+349.34 грн
25+338.75 грн
50+310.41 грн
100+302.93 грн
338+289.93 грн
676+278.03 грн
1014+273.89 грн
В кошику  од. на суму  грн.
PVA3054NS-TPBF PVA3054NS-TPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 50 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
750+321.31 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
PVA3054NS-TPBF PVA3054NS-TPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 50 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
1+527.14 грн
10+452.43 грн
25+432.07 грн
50+391.58 грн
100+378.15 грн
250+361.08 грн
В кошику  од. на суму  грн.
FM25CL64B-DGTR FM25CL64B-DGTR Infineon Technologies Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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FM25CL64B-DGTR FM25CL64B-DGTR Infineon Technologies Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)
2+206.09 грн
10+185.33 грн
25+179.99 грн
50+165.08 грн
100+161.24 грн
250+156.17 грн
500+149.86 грн
1000+146.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4678GMXUMA2 TLE4678GMXUMA2 Infineon Technologies Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6 Description: IC REG LINEAR 5V 200MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+75.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE4678GMXUMA2 TLE4678GMXUMA2 Infineon Technologies Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6 Description: IC REG LINEAR 5V 200MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
T1190N16TOFVTXPSA1 T1190N16TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+20788.38 грн
В кошику  од. на суму  грн.
T1190N14TOFVTXPSA1 T1190N14TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+20816.48 грн
В кошику  од. на суму  грн.
IPDQ60R017S7AXTMA1 IPDQ60R017S7AXTMA1 Infineon Technologies Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ60R017S7AXTMA1 IPDQ60R017S7AXTMA1 Infineon Technologies Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
1+1050.87 грн
10+856.96 грн
100+741.29 грн
В кошику  од. на суму  грн.
IPDQ60R017S7XTMA1 IPDQ60R017S7XTMA1 Infineon Technologies Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ60R017S7XTMA1 IPDQ60R017S7XTMA1 Infineon Technologies Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
на замовлення 686 шт:
термін постачання 21-31 дні (днів)
1+1014.25 грн
10+824.32 грн
100+712.38 грн
В кошику  од. на суму  грн.
IPDQ60R040S7AXTMA1 IPDQ60R040S7AXTMA1 Infineon Technologies Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ60R040S7AXTMA1 IPDQ60R040S7AXTMA1 Infineon Technologies Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
1+705.98 грн
10+464.97 грн
100+343.48 грн
В кошику  од. на суму  грн.
IPDQ60R045CFD7XTMA1 IPDQ60R045CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+585.05 грн
10+434.63 грн
25+402.42 грн
100+344.45 грн
250+328.62 грн
В кошику  од. на суму  грн.
IPDQ60R075CFD7XTMA1 IPDQ60R075CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+418.14 грн
10+306.87 грн
25+282.99 грн
100+240.94 грн
250+229.19 грн
В кошику  од. на суму  грн.
IPDQ65R060CFD7XTMA1 IPDQ65R060CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
товару немає в наявності
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IPDQ65R125CFD7XTMA1 IPDQ65R125CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ65R029CFD7XTMA1 IPDQ65R029CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ65R017CFD7XTMA1 IPDQ65R017CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ65R040CFD7XTMA1 IPDQ65R040CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE5014SP16DE0002XUMA1 TLE5014SP16DE0002XUMA1 Infineon Technologies Infineon-TLE5014SP16D+E0002-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c92e1bc10212 Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 2977 шт:
термін постачання 21-31 дні (днів)
1+758.77 грн
10+503.76 грн
100+415.54 грн
В кошику  од. на суму  грн.
DF14MR12W1M1HFB67BPSA1 DF14MR12W1M1HFB67BPSA1 Infineon Technologies DF14MR12W1M1HF_B67_DS.pdf Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+5537.10 грн
В кошику  од. на суму  грн.
IR2133STRPBF IR2133STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+140.48 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IR2133STRPBF IR2133STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1135 шт:
термін постачання 21-31 дні (днів)
2+252.92 грн
10+183.69 грн
25+168.57 грн
100+142.57 грн
250+135.13 грн
500+130.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FM33256B-G FM33256B-G Infineon Technologies Infineon-FM33256B_256-Kbit_(32_K_8)_Integrated_Processor_Companion_with_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec926014192 Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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CY15V104QN-50LPXIT Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a Description: IC FRAM 4MBIT SPI 50MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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IPD60R180P7SE8228AUMA1 IPD60R180P7SE8228AUMA1 Infineon Technologies Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 Infineon Technologies Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
3+118.37 грн
50+32.72 грн
100+32.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S6E2C39H0AGV2000A S6E2C39H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
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AUIRFS4010 AUIRFS4010 Infineon Technologies auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3 Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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MB91306RPFV-G-SNE1 Infineon Technologies Description: IC ANALOG
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
RAM Size: 64K x 8
Operating Temperature: 0°C ~ 70°C
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: FR60 RISC
Data Converters: A/D 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
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CY15V108QI-20LPXIT Infineon Technologies Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021 Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 Infineon Technologies Infineon-IKCM20L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb7a6f8e7902 Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+1010.85 грн
14+746.43 грн
28+709.88 грн
В кошику  од. на суму  грн.
IKCM15L60GAXKMA1 IKCM15L60GAXKMA1 Infineon Technologies Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+819.24 грн
14+600.87 грн
28+570.56 грн
112+492.74 грн
252+474.46 грн
В кошику  од. на суму  грн.
IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 Infineon Technologies Infineon-IKCM10L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb3a61b278a2 Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
товару немає в наявності
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IPP60R280CFD7XKSA1 IPP60R280CFD7XKSA1 Infineon Technologies Infineon-IPP60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea850969a78ae Description: MOSFET N-CH 650V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
2+202.68 грн
50+96.09 грн
100+88.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB120N10S403ATMA1 IPB120N10S403ATMA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPB120N10S403ATMA1 IPB120N10S403ATMA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 712 шт:
термін постачання 21-31 дні (днів)
1+350.86 грн
10+227.98 грн
100+162.53 грн
500+144.42 грн
В кошику  од. на суму  грн.
IPP120N10S405AKSA1 IPP120N10S405AKSA1 Infineon Technologies IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67 Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY91F579CHSPMC1-GSE1 CY91F579CHSPMC1-GSE1 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 144K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 111
DigiKey Programmable: Not Verified
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CY8C4A45FNI-483T Infineon Technologies Infineon-PSoC_Analog_Coprocessor_CY8C4AXX_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0f3a166b1 Description: IC MCU 32BIT 32KB FLASH 45WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 45-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 45-WLCSP (1.99x3.69)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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CY3213-8SOIC Infineon Technologies Description: KIT FLEX POD FOR CY8C21123
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Obsolete
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CY22393ZXI-510 CY22393-95,CY223931.pdf
CY22393ZXI-510
Виробник: Infineon Technologies
Description: IC CLOCK GEN PROG 16TSSOP
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
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SLS32AIA020X2USON10XTMA4 Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9
SLS32AIA020X2USON10XTMA4
Виробник: Infineon Technologies
Description: OPTIGA TRUST
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Embedded Security Trusted Computing
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
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SI4420DY si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981
SI4420DY
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
товару немає в наявності
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CY62126EV30LL-45BVXI CY62126EV30_RevH.pdf
CY62126EV30LL-45BVXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.60 грн
10+202.88 грн
25+193.47 грн
40+177.20 грн
80+170.94 грн
230+161.82 грн
480+153.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FS30R06W1E3BOMA1 Infineon-FS30R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113cecd4c3102c1
FS30R06W1E3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 60A 150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2766.84 грн
24+1794.01 грн
В кошику  од. на суму  грн.
FS20R06W1E3BOMA1 Infineon-FS20R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b50a7b000552
FS20R06W1E3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 35A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2088.97 грн
24+1331.81 грн
В кошику  од. на суму  грн.
FS35R12W1T4BOMA1 Infineon-FS35R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4be783c0543
FS35R12W1T4BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 65A 225W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2546.28 грн
24+1655.25 грн
120+1608.33 грн
В кошику  од. на суму  грн.
FS50R12KT4PB11BPSA1 Infineon-FS50R12KT4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015dcbe0274c7cb4
FS50R12KT4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6218.37 грн
В кошику  од. на суму  грн.
FS300R17OE4B81BPSA1 Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72
FS300R17OE4B81BPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+61689.82 грн
В кошику  од. на суму  грн.
FP75R12N2T4B86BPSA1 infineon-fp75r12n2t4-ds-ja.pdf?fileId=5546d462689a790c016939d8a1586b47
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
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FP75R17N3E4B20BPSA1 infineon-fs75r17w2e4p-b11-datasheet-en.pdf
FP75R17N3E4B20BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 150A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8114.03 грн
10+6583.51 грн
В кошику  од. на суму  грн.
FS15R12YT3BOMA1
FS15R12YT3BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 110W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
S6E1C32D0AGV20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32D0AGV20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART, USB
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+363.63 грн
10+314.90 грн
25+297.65 грн
160+242.08 грн
320+229.67 грн
480+206.08 грн
960+170.95 грн
В кошику  од. на суму  грн.
S6E1C32D0AGN20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32D0AGN20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S6E1C32D0AGN20050 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 54
товару немає в наявності
В кошику  од. на суму  грн.
IPG20N06S2L65AUMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGBHIS10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGBHIS10
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 2781 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+390.03 грн
10+349.34 грн
25+338.75 грн
50+310.41 грн
100+302.93 грн
338+289.93 грн
676+278.03 грн
1014+273.89 грн
В кошику  од. на суму  грн.
PVA3054NS-TPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NS-TPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 50 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+321.31 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
PVA3054NS-TPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NS-TPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 50 mA
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+527.14 грн
10+452.43 грн
25+432.07 грн
50+391.58 грн
100+378.15 грн
250+361.08 грн
В кошику  од. на суму  грн.
FM25CL64B-DGTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25CL64B-DGTR
Виробник: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FM25CL64B-DGTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25CL64B-DGTR
Виробник: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.09 грн
10+185.33 грн
25+179.99 грн
50+165.08 грн
100+161.24 грн
250+156.17 грн
500+149.86 грн
1000+146.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4678GMXUMA2 Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6
TLE4678GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+75.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE4678GMXUMA2 Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6
TLE4678GMXUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
T1190N16TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20788.38 грн
В кошику  од. на суму  грн.
T1190N14TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N14TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20816.48 грн
В кошику  од. на суму  грн.
IPDQ60R017S7AXTMA1 Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b
IPDQ60R017S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ60R017S7AXTMA1 Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b
IPDQ60R017S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1050.87 грн
10+856.96 грн
100+741.29 грн
В кошику  од. на суму  грн.
IPDQ60R017S7XTMA1 Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818
IPDQ60R017S7XTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ60R017S7XTMA1 Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818
IPDQ60R017S7XTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
на замовлення 686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1014.25 грн
10+824.32 грн
100+712.38 грн
В кошику  од. на суму  грн.
IPDQ60R040S7AXTMA1 Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821
IPDQ60R040S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPDQ60R040S7AXTMA1 Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821
IPDQ60R040S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+705.98 грн
10+464.97 грн
100+343.48 грн
В кошику  од. на суму  грн.
IPDQ60R045CFD7XTMA1 Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd
IPDQ60R045CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+585.05 грн
10+434.63 грн
25+402.42 грн
100+344.45 грн
250+328.62 грн
В кошику  од. на суму  грн.
IPDQ60R075CFD7XTMA1 Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e
IPDQ60R075CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+418.14 грн
10+306.87 грн
25+282.99 грн
100+240.94 грн
250+229.19 грн
В кошику  од. на суму  грн.
IPDQ65R060CFD7XTMA1 Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b
IPDQ65R060CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
товару немає в наявності
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IPDQ65R125CFD7XTMA1 Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5
IPDQ65R125CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
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IPDQ65R029CFD7XTMA1 Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3
IPDQ65R029CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
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IPDQ65R017CFD7XTMA1 Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0
IPDQ65R017CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
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IPDQ65R040CFD7XTMA1 Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788
IPDQ65R040CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
товару немає в наявності
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TLE5014SP16DE0002XUMA1 Infineon-TLE5014SP16D+E0002-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c92e1bc10212
TLE5014SP16DE0002XUMA1
Виробник: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 2977 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+758.77 грн
10+503.76 грн
100+415.54 грн
В кошику  од. на суму  грн.
DF14MR12W1M1HFB67BPSA1 DF14MR12W1M1HF_B67_DS.pdf
DF14MR12W1M1HFB67BPSA1
Виробник: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5537.10 грн
В кошику  од. на суму  грн.
IR2133STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+140.48 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IR2133STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+252.92 грн
10+183.69 грн
25+168.57 грн
100+142.57 грн
250+135.13 грн
500+130.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FM33256B-G Infineon-FM33256B_256-Kbit_(32_K_8)_Integrated_Processor_Companion_with_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec926014192
FM33256B-G
Виробник: Infineon Technologies
Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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CY15V104QN-50LPXIT Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 50MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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IPD60R180P7SE8228AUMA1
IPD60R180P7SE8228AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товару немає в наявності
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IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.37 грн
50+32.72 грн
100+32.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S6E2C39H0AGV2000A download
S6E2C39H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
товару немає в наявності
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AUIRFS4010 auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3
AUIRFS4010
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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MB91306RPFV-G-SNE1
Виробник: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
RAM Size: 64K x 8
Operating Temperature: 0°C ~ 70°C
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: FR60 RISC
Data Converters: A/D 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
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CY15V108QI-20LPXIT Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021
Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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IKCM20L60GAXKMA1 Infineon-IKCM20L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb7a6f8e7902
IKCM20L60GAXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1010.85 грн
14+746.43 грн
28+709.88 грн
В кошику  од. на суму  грн.
IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
IKCM15L60GAXKMA1
Виробник: Infineon Technologies
Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+819.24 грн
14+600.87 грн
28+570.56 грн
112+492.74 грн
252+474.46 грн
В кошику  од. на суму  грн.
IKCM10L60GAXKMA1 Infineon-IKCM10L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb3a61b278a2
IKCM10L60GAXKMA1
Виробник: Infineon Technologies
Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
товару немає в наявності
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IPP60R280CFD7XKSA1 Infineon-IPP60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea850969a78ae
IPP60R280CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+202.68 грн
50+96.09 грн
100+88.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB120N10S403ATMA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPB120N10S403ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPB120N10S403ATMA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPB120N10S403ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 712 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+350.86 грн
10+227.98 грн
100+162.53 грн
500+144.42 грн
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IPP120N10S405AKSA1 IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67
IPP120N10S405AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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CY91F579CHSPMC1-GSE1 download
CY91F579CHSPMC1-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 144K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 111
DigiKey Programmable: Not Verified
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CY8C4A45FNI-483T Infineon-PSoC_Analog_Coprocessor_CY8C4AXX_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0f3a166b1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 45WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 45-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 45-WLCSP (1.99x3.69)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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CY3213-8SOIC
Виробник: Infineon Technologies
Description: KIT FLEX POD FOR CY8C21123
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Obsolete
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