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BC 847C B5003 BC 847C B5003 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 60000 шт
В кошику  од. на суму  грн.
BC 850B B5003 BC 850B B5003 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
 Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
BC 850C B5003 BC 850C B5003 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
 Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
BC 857B B5003 BC 857B B5003 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
 Мінімальне замовлення: 60000 шт
В кошику  од. на суму  грн.
BC857CB5003XT BC857CB5003XT Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
BC860CB5003XT BC860CB5003XT Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
 Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
BFR 705L3RH E6327 BFR 705L3RH E6327 Infineon Technologies BFR705L3RH.pdf Description: TRANS RF BIPO NPN 10MA TSLP-3-9
товару немає в наявності
 Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
BFR740L3RHE6327XTSA1 BFR740L3RHE6327XTSA1 Infineon Technologies Infineon-BFR740L3RH-DS-v03_00-EN.pdf?fileId=5546d46265f064ff01663896ffd44ecb Description: RF TRANS NPN 4.7V 42GHZ TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Supplier Device Package: PG-TSLP-3
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
BFR750L3RHE6327XTSA1 BFR750L3RHE6327XTSA1 Infineon Technologies BFR750L3R.pdf Description: RF TRANS NPN 4.7V 37GHZ TSLP-3
Part Status: Obsolete
Supplier Device Package: PG-TSLP-3
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 37GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 90mA
Power - Max: 360mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
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BSC020N025S G BSC020N025S G Infineon Technologies BSC020N025S_G.pdf Description: MOSFET N-CH 25V 30A/100A TDSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
FET Type: N-Channel
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ESD8V0L1B-02LRH E6327 ESD8V0L1B-02LRH E6327 Infineon Technologies ESD8V0L.pdf Description: TVS DIODE 14VWM 21VC TSLP-2
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 8.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Voltage - Breakdown (Min): 14.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 14V (Max)
товару немає в наявності
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SMBT 3904 B5003 SMBT 3904 B5003 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS NPN 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 60000 шт
В кошику  од. на суму  грн.
SMBT 3906 B5003 SMBT 3906 B5003 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS PNP 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 60000 шт
В кошику  од. на суму  грн.
SPA02N80C3XKSA1 SPA02N80C3XKSA1 Infineon Technologies SPP_A02N80C3_Rev%5b1%5d.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116384eee2600b4 Description: MOSFET N-CH 800V 2A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SPA06N60C3XKSA1 SPA06N60C3XKSA1 Infineon Technologies SPA06N60C3_Rev[1].1.5.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a60116389c830e0180 Description: MOSFET N-CH 650V 6.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
товару немає в наявності
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SPA07N60C3XKSA1 SPA07N60C3XKSA1 Infineon Technologies Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
2+203.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA07N65C3XKSA1 SPA07N65C3XKSA1 Infineon Technologies SPP_A_I07N65C3_Rev.1.9.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a3043163797a6011637d56b30003d Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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SPA11N65C3XKSA1 SPA11N65C3XKSA1 Infineon Technologies SP%28P%2CA%2CI%2911N65C3.pdf Description: MOSFET N-CH 650V 11A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
2+232.47 грн
50+111.75 грн
100+100.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA15N60C3XKSA1 SPA15N60C3XKSA1 Infineon Technologies Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
2+301.44 грн
50+149.06 грн
100+135.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA20N65C3XKSA1 SPA20N65C3XKSA1 Infineon Technologies Infineon-SPP_A_I20N65C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42ea4314a07 Description: MOSFET N-CH 650V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
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BAR 95-02LS E6327 BAR 95-02LS E6327 Infineon Technologies BAR95.pdf Description: RF DIODE PIN 50V 150MW TSSLP-2
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)
13+24.02 грн
19+16.04 грн
25+14.24 грн
100+11.47 грн
250+10.57 грн
500+10.01 грн
1000+9.40 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
BAS 16 B5003 BAS 16 B5003 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE GEN PURP 80V 250MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BAS 3005B-02V E6327 BAS 3005B-02V E6327 Infineon Technologies Infineon-BAS3005B-DS-v01_01-en.pdf?fileId=db3a30432d9b3066012db880a14b0bc1 Description: DIODE SCHOTTKY 30V 500MA SC79-2
Current - Reverse Leakage @ Vr: 25 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: PG-SC79-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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BAS 40 B5003 BAS 40 B5003 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-SOT23
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В кошику  од. на суму  грн.
BAS 70 B5003 BAS 70 B5003 Infineon Technologies bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12 Description: DIODE SCHOTTKY 70V 70MA SOT23-3
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В кошику  од. на суму  грн.
BAT 54-04 B5003 BAT 54-04 B5003 Infineon Technologies BAT54_Series.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT23
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В кошику  од. на суму  грн.
BAT 54-05 B5003 BAT 54-05 B5003 Infineon Technologies BAT54_Series.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT23
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В кошику  од. на суму  грн.
BAT5405E6327HTSA1 BAT5405E6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1635 шт:
термін постачання 21-31 дні (днів)
14+23.25 грн
22+13.95 грн
100+8.72 грн
500+6.05 грн
1000+5.36 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
BAT5406E6327HTSA1 BAT5406E6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 30V 200MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7891 шт:
термін постачання 21-31 дні (днів)
25+12.40 грн
46+6.57 грн
100+5.58 грн
500+4.64 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BAT 54 B5003 BAT 54 B5003 Infineon Technologies BAT54_Series.pdf Description: DIODE SCHOTTKY 30V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54E6327HTSA1 BAT54E6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 30V 200MA PGSOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
20+16.27 грн
31+9.78 грн
100+6.09 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BAT 64-05 B5003 BAT 64-05 B5003 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 120mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BAT6405E6327HTSA1 BAT6405E6327HTSA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 250MA SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 250mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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В кошику  од. на суму  грн.
BAT 64 B5003 BAT 64 B5003 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BB439E6327HTSA1 BB439E6327HTSA1 Infineon Technologies bb439series.pdf?folderId=db3a304313d846880113d98def1d0130&fileId=db3a304313d846880113d98ff7a10132 Description: DIODE VARACTR 28V SGL PG-SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Q @ Vr, F: 600 @ 25V, 200MHz
Capacitance Ratio Condition: C2/C25
Supplier Device Package: PG-SOD323-3D
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 28 V
Capacitance Ratio: 8.0
на замовлення 43750 шт:
термін постачання 21-31 дні (днів)
9+36.42 грн
11+27.39 грн
100+27.33 грн
500+20.46 грн
1000+18.53 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BC 846B B5003 BC 846B B5003 Infineon Technologies bc846,bc847,bc848,bc849,bc850.pdf Description: TRANS NPN 65V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BC 847B B5003 BC 847B B5003 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BC 847C B5003 BC 847C B5003 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BC857CB5003XT BC857CB5003XT Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BFR 705L3RH E6327 BFR 705L3RH E6327 Infineon Technologies BFR705L3RH.pdf Description: TRANS RF BIPO NPN 10MA TSLP-3-9
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BFR740L3RHE6327XTSA1 BFR740L3RHE6327XTSA1 Infineon Technologies Infineon-BFR740L3RH-DS-v03_00-EN.pdf?fileId=5546d46265f064ff01663896ffd44ecb Description: RF TRANS NPN 4.7V 42GHZ TSLP-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Supplier Device Package: PG-TSLP-3
Part Status: Active
на замовлення 6549 шт:
термін постачання 21-31 дні (днів)
6+55.79 грн
10+38.43 грн
25+34.53 грн
100+28.44 грн
250+26.54 грн
500+25.40 грн
1000+24.28 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BFR750L3RHE6327XTSA1 BFR750L3RHE6327XTSA1 Infineon Technologies BFR750L3R.pdf Description: RF TRANS NPN 4.7V 37GHZ TSLP-3
Part Status: Obsolete
Supplier Device Package: PG-TSLP-3
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 37GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 90mA
Power - Max: 360mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
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BGA615L7E6327XTSA1 BGA615L7E6327XTSA1 Infineon Technologies BGA615L7.pdf Description: IC RF AMP GPS 1.575GHZ TSLP7-1
Supplier Device Package: PG-TSLP-7-1
Noise Figure: 0.9dB
Current - Supply: 5.6mA
Gain: 18dB
Voltage - Supply: 2.4V ~ 3.2V
RF Type: GPS
Frequency: 1.575GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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BGA 622 E6327 BGA 622 E6327 Infineon Technologies BGA622.pdf Description: IC AMP 802.15 500MHZ-6GHZ SOT343
P1dB: -16.5dBm
Noise Figure: 1dB
Current - Supply: 10mA
Gain: 15dB
Voltage - Supply: 2.75V
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Frequency: 500MHz ~ 6GHz
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT343-3D
Test Frequency: 1.575GHz
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BSA223SP BSA223SP Infineon Technologies BSA223SP.pdf Description: MOSFET P-CH 20V 390MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SC-75
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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BSO052N03S BSO052N03S Infineon Technologies BSO052N03S.pdf Description: MOSFET N-CH 30V 14A 8DSO
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BSO200N03 BSO200N03 Infineon Technologies BSO200N03.pdf Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
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BSO200N03S BSO200N03S Infineon Technologies BSO200N03S.pdf Description: MOSFET N-CH 30V 7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BSO300N03S BSO300N03S Infineon Technologies BSO300N03S.pdf Description: MOSFET N-CH 30V 5.7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 8µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BSP170PL6327HTSA1 BSP170PL6327HTSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fdad470576f Description: MOSFET P-CH 60V 1.9A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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BSP295L6327HTSA1 BSP295L6327HTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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BSP315PL6327HTSA1 BSP315PL6327HTSA1 Infineon Technologies BSP315P.pdf Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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BSP372L6327HTSA1 BSP372L6327HTSA1 Infineon Technologies BSP372.pdf Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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BSP373L6327HTSA1 BSP373L6327HTSA1 Infineon Technologies BSP373.pdf Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Qualification: AEC-Q101
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ESD8V0L1B-02LRH E6327 ESD8V0L1B-02LRH E6327 Infineon Technologies ESD8V0L.pdf Description: TVS DIODE 14VWM 21VC TSLP-2
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Voltage - Breakdown (Min): 14.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 8.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
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ESD8V0L2B03LE6327XTMA1 ESD8V0L2B03LE6327XTMA1 Infineon Technologies ESD8V0L.pdf Description: TVS DIODE 22VWM 26VC TSLP-3-1
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 23V (Typ)
Bidirectional Channels: 2
Supplier Device Package: PG-TSLP-3-1
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
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IPB03N03LA G IPB03N03LA G Infineon Technologies IPB03N03LAG_Rev1.6.pdf Description: MOSFET N-CH 25V 80A TO263-3
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IPB04N03LA G IPB04N03LA G Infineon Technologies IPB04N03LA_Rev1.7_G.pdf Description: MOSFET N-CH 25V 80A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPB085N06L G IPB085N06L G Infineon Technologies IPB%2CIPP085N06L_G.pdf Description: MOSFET N-CH 60V 80A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 2V @ 125µA
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TO263-3-2
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IPB100N06S3L-04 IPB100N06S3L-04 Infineon Technologies IP%28B%2CI%2CP%29N06S3L-04.pdf Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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BC 847C B5003 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847C B5003
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 60000 шт
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BC 850B B5003 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 850B B5003
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
Мінімальне замовлення: 30000 шт
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BC 850C B5003 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 850C B5003
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
Мінімальне замовлення: 30000 шт
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BC 857B B5003 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC 857B B5003
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
Мінімальне замовлення: 60000 шт
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BC857CB5003XT Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC857CB5003XT
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
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BC860CB5003XT Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC860CB5003XT
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
Мінімальне замовлення: 30000 шт
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BFR 705L3RH E6327 BFR705L3RH.pdf
BFR 705L3RH E6327
Виробник: Infineon Technologies
Description: TRANS RF BIPO NPN 10MA TSLP-3-9
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Мінімальне замовлення: 15000 шт
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BFR740L3RHE6327XTSA1 Infineon-BFR740L3RH-DS-v03_00-EN.pdf?fileId=5546d46265f064ff01663896ffd44ecb
BFR740L3RHE6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Supplier Device Package: PG-TSLP-3
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 15000 шт
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BFR750L3RHE6327XTSA1 BFR750L3R.pdf
BFR750L3RHE6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 37GHZ TSLP-3
Part Status: Obsolete
Supplier Device Package: PG-TSLP-3
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 37GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 90mA
Power - Max: 360mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
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BSC020N025S G BSC020N025S_G.pdf
BSC020N025S G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 30A/100A TDSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 110µA
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
FET Type: N-Channel
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Мінімальне замовлення: 5000 шт
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ESD8V0L1B-02LRH E6327 ESD8V0L.pdf
ESD8V0L1B-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 21VC TSLP-2
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 8.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Voltage - Breakdown (Min): 14.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 14V (Max)
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SMBT 3904 B5003 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT 3904 B5003
Виробник: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 60000 шт
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SMBT 3906 B5003 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT 3906 B5003
Виробник: Infineon Technologies
Description: TRANS PNP 40V 0.2A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 60000 шт
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SPA02N80C3XKSA1 SPP_A02N80C3_Rev%5b1%5d.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116384eee2600b4
SPA02N80C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Power Dissipation (Max): 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
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Мінімальне замовлення: 500 шт
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SPA06N60C3XKSA1 SPA06N60C3_Rev[1].1.5.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a60116389c830e0180
SPA06N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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SPA07N60C3XKSA1 Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c
SPA07N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+203.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA07N65C3XKSA1 SPP_A_I07N65C3_Rev.1.9.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a3043163797a6011637d56b30003d
SPA07N65C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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SPA11N65C3XKSA1 SP%28P%2CA%2CI%2911N65C3.pdf
SPA11N65C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+232.47 грн
50+111.75 грн
100+100.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
SPA15N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+301.44 грн
50+149.06 грн
100+135.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA20N65C3XKSA1 Infineon-SPP_A_I20N65C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42ea4314a07
SPA20N65C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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BAR 95-02LS E6327 BAR95.pdf
BAR 95-02LS E6327
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 150MW TSSLP-2
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
13+24.02 грн
19+16.04 грн
25+14.24 грн
100+11.47 грн
250+10.57 грн
500+10.01 грн
1000+9.40 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
BAS 16 B5003 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS 16 B5003
Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BAS 3005B-02V E6327 Infineon-BAS3005B-DS-v01_01-en.pdf?fileId=db3a30432d9b3066012db880a14b0bc1
BAS 3005B-02V E6327
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 500MA SC79-2
Current - Reverse Leakage @ Vr: 25 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: PG-SC79-2
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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BAS 40 B5003 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS 40 B5003
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-SOT23
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BAS 70 B5003 bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12
BAS 70 B5003
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
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BAT 54-04 B5003 BAT54_Series.pdf
BAT 54-04 B5003
Виробник: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 30V SOT23
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BAT 54-05 B5003 BAT54_Series.pdf
BAT 54-05 B5003
Виробник: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 30V SOT23
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BAT5405E6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5405E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1635 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
14+23.25 грн
22+13.95 грн
100+8.72 грн
500+6.05 грн
1000+5.36 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
BAT5406E6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5406E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7891 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
25+12.40 грн
46+6.57 грн
100+5.58 грн
500+4.64 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
BAT 54 B5003 BAT54_Series.pdf
BAT 54 B5003
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54E6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA PGSOT23
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
20+16.27 грн
31+9.78 грн
100+6.09 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BAT 64-05 B5003 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT 64-05 B5003
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 120mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BAT6405E6327HTSA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6405E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 250mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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BAT 64 B5003 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT 64 B5003
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BB439E6327HTSA1 bb439series.pdf?folderId=db3a304313d846880113d98def1d0130&fileId=db3a304313d846880113d98ff7a10132
BB439E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE VARACTR 28V SGL PG-SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Q @ Vr, F: 600 @ 25V, 200MHz
Capacitance Ratio Condition: C2/C25
Supplier Device Package: PG-SOD323-3D
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 28 V
Capacitance Ratio: 8.0
на замовлення 43750 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+36.42 грн
11+27.39 грн
100+27.33 грн
500+20.46 грн
1000+18.53 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BC 846B B5003 bc846,bc847,bc848,bc849,bc850.pdf
BC 846B B5003
Виробник: Infineon Technologies
Description: TRANS NPN 65V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BC 847B B5003 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847B B5003
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BC 847C B5003 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847C B5003
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BC857CB5003XT Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC857CB5003XT
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BFR 705L3RH E6327 BFR705L3RH.pdf
BFR 705L3RH E6327
Виробник: Infineon Technologies
Description: TRANS RF BIPO NPN 10MA TSLP-3-9
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BFR740L3RHE6327XTSA1 Infineon-BFR740L3RH-DS-v03_00-EN.pdf?fileId=5546d46265f064ff01663896ffd44ecb
BFR740L3RHE6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ TSLP-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Supplier Device Package: PG-TSLP-3
Part Status: Active
на замовлення 6549 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+55.79 грн
10+38.43 грн
25+34.53 грн
100+28.44 грн
250+26.54 грн
500+25.40 грн
1000+24.28 грн
Мінімальне замовлення: 6 шт
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BFR750L3RHE6327XTSA1 BFR750L3R.pdf
BFR750L3RHE6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 37GHZ TSLP-3
Part Status: Obsolete
Supplier Device Package: PG-TSLP-3
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 37GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 90mA
Power - Max: 360mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
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BGA615L7E6327XTSA1 BGA615L7.pdf
BGA615L7E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP GPS 1.575GHZ TSLP7-1
Supplier Device Package: PG-TSLP-7-1
Noise Figure: 0.9dB
Current - Supply: 5.6mA
Gain: 18dB
Voltage - Supply: 2.4V ~ 3.2V
RF Type: GPS
Frequency: 1.575GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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BGA 622 E6327 BGA622.pdf
BGA 622 E6327
Виробник: Infineon Technologies
Description: IC AMP 802.15 500MHZ-6GHZ SOT343
P1dB: -16.5dBm
Noise Figure: 1dB
Current - Supply: 10mA
Gain: 15dB
Voltage - Supply: 2.75V
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Frequency: 500MHz ~ 6GHz
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT343-3D
Test Frequency: 1.575GHz
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BSA223SP BSA223SP.pdf
BSA223SP
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 390MA SC75
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SC-75
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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BSO052N03S BSO052N03S.pdf
BSO052N03S
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8DSO
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BSO200N03 BSO200N03.pdf
BSO200N03
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
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BSO200N03S BSO200N03S.pdf
BSO200N03S
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BSO300N03S BSO300N03S.pdf
BSO300N03S
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 5.7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 8µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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BSP170PL6327HTSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fdad470576f
BSP170PL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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BSP295L6327HTSA1 Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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BSP315PL6327HTSA1 BSP315P.pdf
BSP315PL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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BSP372L6327HTSA1 BSP372.pdf
BSP372L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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BSP373L6327HTSA1 BSP373.pdf
BSP373L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Qualification: AEC-Q101
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ESD8V0L1B-02LRH E6327 ESD8V0L.pdf
ESD8V0L1B-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 21VC TSLP-2
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Voltage - Breakdown (Min): 14.5V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-17
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 8.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
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ESD8V0L2B03LE6327XTMA1 ESD8V0L.pdf
ESD8V0L2B03LE6327XTMA1
Виробник: Infineon Technologies
Description: TVS DIODE 22VWM 26VC TSLP-3-1
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 23V (Typ)
Bidirectional Channels: 2
Supplier Device Package: PG-TSLP-3-1
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
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IPB03N03LA G IPB03N03LAG_Rev1.6.pdf
IPB03N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO263-3
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IPB04N03LA G IPB04N03LA_Rev1.7_G.pdf
IPB04N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPB085N06L G IPB%2CIPP085N06L_G.pdf
IPB085N06L G
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 2V @ 125µA
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TO263-3-2
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IPB100N06S3L-04 IP%28B%2CI%2CP%29N06S3L-04.pdf
IPB100N06S3L-04
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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