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IRFB3207ZPBF IRFB3207ZPBF Infineon Technologies irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161 description Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
на замовлення 4976 шт:
термін постачання 21-31 дні (днів)
2+255.72 грн
50+124.20 грн
100+112.33 грн
500+85.90 грн
1000+79.63 грн
2000+74.36 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFB4332PbF IRFB4332PbF Infineon Technologies irfb4332pbf.pdf?fileId=5546d462533600a40153561633be1e35 Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
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IRFB4228PBF IRFB4228PBF Infineon Technologies IRSDS09279-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 83A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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IRS2304SPBF IRS2304SPBF Infineon Technologies irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 3800 шт
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IRS2541PBF IRS2541PBF Infineon Technologies IRS254%280%2C1%29%28S%29PbF.pdf Description: IC LED DRIVER CTRLR PWM 8DIP
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
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IRS2308SPBF IRS2308SPBF Infineon Technologies irs2308.pdf?fileId=5546d462533600a40153567a98ac2804 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3625 шт:
термін постачання 21-31 дні (днів)
3+129.41 грн
10+92.01 грн
95+75.09 грн
190+67.28 грн
285+66.17 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2186PBF IRS2186PBF Infineon Technologies irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFI4228PBF IRFI4228PBF Infineon Technologies IRFI4228PbF.pdf Description: MOSFET N-CH 150V 34A TO220AB FP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
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IRS2166DSPBF IRS2166DSPBF Infineon Technologies IRS2166D%28S%29PbF.pdf Description: IC PFC/BALLAST CNTL 46KHZ 16SOIC
Current - Supply: 20 mA
Dimming: No
Supplier Device Package: 16-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 40kHz ~ 46kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRFSL3307ZPBF IRFSL3307ZPBF Infineon Technologies irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
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IRS2004PBF IRS2004PBF Infineon Technologies irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Description: IC GATE DRVR HALF-BRIDGE 8DIP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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IRFSL4321PBF IRFSL4321PBF Infineon Technologies irfs4321pbf.pdf?fileId=5546d462533600a40153563a20dd21ad Description: MOSFET N-CH 150V 85A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IRS21531DPBF IRS21531DPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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IRFS3206PBF IRFS3206PBF Infineon Technologies irfs3206pbf.pdf?fileId=5546d462533600a401535636671c215a Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
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IRFS3207ZPBF IRFS3207ZPBF Infineon Technologies irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161 Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRFS3306PBF IRFS3306PBF Infineon Technologies irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165 Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRFS4228PBF IRFS4228PBF Infineon Technologies IRFS(L)4228PbF.pdf Description: MOSFET N-CH 150V 83A D2PAK
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
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IRS2117SPBF IRS2117SPBF Infineon Technologies irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRFS3307ZPBF IRFS3307ZPBF Infineon Technologies irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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IR1166SPBF IR1166SPBF Infineon Technologies IR1166SPbF.pdf description Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 4A
Logic Voltage - VIL, VIH: 2V, 2.15V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 21ns, 10ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 11.4V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 285 шт
В кошику  од. на суму  грн.
IRF6622TRPBF IRF6622TRPBF Infineon Technologies IRF6622(TR)PbF.pdf Description: MOSFET N-CH 25V 15A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRS2003SPBF IRS2003SPBF Infineon Technologies irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2004SPBF IRS2004SPBF Infineon Technologies irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 9624 шт:
термін постачання 21-31 дні (днів)
4+82.14 грн
10+57.01 грн
95+45.86 грн
190+40.93 грн
285+39.88 грн
570+38.33 грн
1045+36.59 грн
2565+35.26 грн
5035+34.46 грн
Мінімальне замовлення: 4 шт
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IRS21531DSPBF IRS21531DSPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1334 шт:
термін постачання 21-31 дні (днів)
3+115.46 грн
10+81.34 грн
95+66.03 грн
190+59.06 грн
285+57.62 грн
570+55.49 грн
1045+53.06 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2181SPBF IRS2181SPBF Infineon Technologies INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 2049 шт:
термін постачання 21-31 дні (днів)
2+158.08 грн
10+112.60 грн
95+92.37 грн
190+82.86 грн
285+80.95 грн
570+78.14 грн
1045+74.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS2183SPBF IRS2183SPBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS21864SPBF IRS21864SPBF Infineon Technologies irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS2186SPBF IRS2186SPBF Infineon Technologies irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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 Мінімальне замовлення: 3800 шт
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IRS2541SPBF IRS2541SPBF Infineon Technologies IRS254%280%2C1%29%28S%29PbF.pdf Description: IC LED DRIVER CTRLR PWM 8SOIC
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-SOIC
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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XC888CM8FFA5VACKXUMA1 XC888CM8FFA5VACKXUMA1 Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40c4a9e0afb&ack=t Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 103.2MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Part Status: Obsolete
Number of I/O: 48
DigiKey Programmable: Not Verified
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IRFS38N20DPBF IRFS38N20DPBF Infineon Technologies irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181 Description: MOSFET N-CH 200V 43A D2PAK
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
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IPS7091GPBF IPS7091GPBF Infineon Technologies IPS7091%28G%2CS%29PbF.pdf Description: IC SWITCH IPS HIGH SIDE 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Current - Output (Max): 1.5A
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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IPS7091GTRPBF IPS7091GTRPBF Infineon Technologies IPS7091%28G%2CS%29PbF.pdf Description: IC SWITCH IPS HIGH SIDE 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Output (Max): 1.5A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IPS7091GTRPBF IPS7091GTRPBF Infineon Technologies IPS7091%28G%2CS%29PbF.pdf Description: IC SWITCH IPS HIGH SIDE 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Output (Max): 1.5A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRAUDAMP4 IRAUDAMP4 Infineon Technologies iraudamp4.pdf Description: EVAL BOARD FOR IRF6645 IRS20955
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±25V ~ 35V
Max Output Power x Channels @ Load: 170W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IRF6645, IRS20955
Supplied Contents: Board(s)
Part Status: Obsolete
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IRPLLNR7 Infineon Technologies fundamentals-of-power-semiconductors Description: EVAL BOARD FOR IRS2166DPBF
Utilized IC / Part: IRS2166DPBF
Contents: Board(s)
Type: Opto/Lighting
Function: Ballast Control
Packaging: Box
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IRDC3651 Infineon Technologies ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e description Description: KIT REF DESIGN SYNCH BUCK REG
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3651S
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 100kHz
Current - Output: 10A
Voltage - Input: 12V ~ 100V
Voltage - Output: 3.3V
Packaging: Box
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IPS1041LPBF IPS1041LPBF Infineon Technologies IPS1041%28L%2CR%29PbF%2CIPS1042GPbF.pdf Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: SOT-223
Ratio - Input:Output: 1:1
Current - Output (Max): 1.95A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
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IPS1042GPBF IPS1042GPBF Infineon Technologies IPS1041%28L%2CR%29PbF%2CIPS1042GPbF.pdf description Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 700mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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AUXHA1051LTR AUXHA1051LTR Infineon Technologies IPS1051LPbF%2CIPS1052GPbF.pdf Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: SOT-223
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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98-0478PBF 98-0478PBF Infineon Technologies IPS1051LPbF%2CIPS1052GPbF.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Part Status: Obsolete
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IPS6041GPBF IPS6041GPBF Infineon Technologies IPS6041GPBF.pdf Description: INTELLIGENT PWR SW 1CH 8SOIC
Rds On (Typ): 110mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Output (Max): 1.6A
Voltage - Load: 6V ~ 28V
Input Type: Non-Inverting
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IRF6643TR1PBF IRF6643TR1PBF Infineon Technologies irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b Description: MOSFET N-CH 150V 6.2A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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IRS2168DSTRPBF IRS2168DSTRPBF Infineon Technologies irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 42.5kHz ~ 46.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply: 10 mA
Dimming: No
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IRFR2607ZPBF IRFR2607ZPBF Infineon Technologies irfr2607zpbf.pdf?fileId=5546d462533600a401535630d6e42083 Description: MOSFET N-CH 75V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3-901|DPAK
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRF6643TR1PBF IRF6643TR1PBF Infineon Technologies irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b Description: MOSFET N-CH 150V 6.2A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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IRS2168DSTRPBF IRS2168DSTRPBF Infineon Technologies irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 42.5kHz ~ 46.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Dimming: No
Current - Supply: 10 mA
на замовлення 2476 шт:
термін постачання 21-31 дні (днів)
2+208.45 грн
10+150.29 грн
25+137.54 грн
100+116.00 грн
250+109.76 грн
500+106.00 грн
1000+101.21 грн
Мінімальне замовлення: 2 шт
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IRF6643TRPBF IRF6643TRPBF Infineon Technologies irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b Description: MOSFET N-CH 150V 6.2A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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CY14B256K-SP45XC CY14B256K-SP45XC Infineon Technologies cy14b256k_8.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.45V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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 Мінімальне замовлення: 60 шт
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CY24488ZXCT CY24488ZXCT Infineon Technologies Infineon-CY24488_Quad-PLL_Clock_Generator_with_Two-Wire_Serial_Interface-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4f18e3a5a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Description: IC PLL CLK GEN I2C 16-TSSOP
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CY4638 Infineon Technologies Description: KIT WIRELESSUSB VOIP
Packaging: Bulk
For Use With/Related Products: CYRF6936
Type: Transceiver
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYRF6936
Supplied Contents: Board(s), Cable(s), Power Supply
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CY62137CV30LL-70BVXE CY62137CV30LL-70BVXE Infineon Technologies CY62137CV%2830%2C33%29MoBL.pdf Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.3V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY62158EV30LL-45BVXI CY62158EV30LL-45BVXI Infineon Technologies Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
1+513.76 грн
10+460.04 грн
25+446.14 грн
50+408.81 грн
100+398.97 грн
В кошику  од. на суму  грн.
CY62158EV30LL-45BVXIT CY62158EV30LL-45BVXIT Infineon Technologies Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 8MBIT PARALLEL 48VFBGA
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY62167DV18LL-55BVXIT CY62167DV18LL-55BVXIT Infineon Technologies CY62167DV18%20MoBL.pdf Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1019BN-15ZXC CY7C1019BN-15ZXC Infineon Technologies Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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 Мінімальне замовлення: 585 шт
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CY7C1019BN-15ZXCT CY7C1019BN-15ZXCT Infineon Technologies Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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CY7C1021BNL-15ZSXA CY7C1021BNL-15ZSXA Infineon Technologies Infineon-CY7C1021BN_1-Mbit_(64_K_X_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb043307f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY7C1021BNL-15ZSXAT CY7C1021BNL-15ZSXAT Infineon Technologies Infineon-CY7C1021BN_1-Mbit_(64_K_X_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb043307f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY7C1021CV33-12BAXI CY7C1021CV33-12BAXI Infineon Technologies CY7C1021CV33%20Rev.H.pdf Description: IC SRAM 1MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 12 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Supplier Device Package: 48-FBGA (7x7)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 416 шт
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IRFB3207ZPBF description irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161
IRFB3207ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
на замовлення 4976 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+255.72 грн
50+124.20 грн
100+112.33 грн
500+85.90 грн
1000+79.63 грн
2000+74.36 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFB4332PbF irfb4332pbf.pdf?fileId=5546d462533600a40153561633be1e35
IRFB4332PbF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
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IRFB4228PBF IRSDS09279-1.pdf?t.download=true&u=5oefqw
IRFB4228PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 83A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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IRS2304SPBF irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802
IRS2304SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 3800 шт
В кошику  од. на суму  грн.
IRS2541PBF IRS254%280%2C1%29%28S%29PbF.pdf
IRS2541PBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8DIP
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
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IRS2308SPBF irs2308.pdf?fileId=5546d462533600a40153567a98ac2804
IRS2308SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 3625 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+129.41 грн
10+92.01 грн
95+75.09 грн
190+67.28 грн
285+66.17 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2186PBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFI4228PBF IRFI4228PbF.pdf
IRFI4228PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 34A TO220AB FP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
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IRS2166DSPBF IRS2166D%28S%29PbF.pdf
IRS2166DSPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CNTL 46KHZ 16SOIC
Current - Supply: 20 mA
Dimming: No
Supplier Device Package: 16-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 40kHz ~ 46kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRFSL3307ZPBF irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c
IRFSL3307ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
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IRS2004PBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
IRS2004PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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IRFSL4321PBF irfs4321pbf.pdf?fileId=5546d462533600a40153563a20dd21ad
IRFSL4321PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 85A TO262
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IRS21531DPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
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IRFS3206PBF irfs3206pbf.pdf?fileId=5546d462533600a401535636671c215a
IRFS3206PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
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IRFS3207ZPBF irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161
IRFS3207ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRFS3306PBF irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165
IRFS3306PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRFS4228PBF IRFS(L)4228PbF.pdf
IRFS4228PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 83A D2PAK
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
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IRS2117SPBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
IRS2117SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRFS3307ZPBF irfs3307zpbf.pdf?fileId=5546d462533600a40153563691d7216c
IRFS3307ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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IR1166SPBF description IR1166SPbF.pdf
IR1166SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 4A
Logic Voltage - VIL, VIH: 2V, 2.15V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 21ns, 10ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 11.4V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Мінімальне замовлення: 285 шт
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IRF6622TRPBF IRF6622(TR)PbF.pdf
IRF6622TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 15A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRS2003SPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2004SPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
IRS2004SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 9624 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+82.14 грн
10+57.01 грн
95+45.86 грн
190+40.93 грн
285+39.88 грн
570+38.33 грн
1045+36.59 грн
2565+35.26 грн
5035+34.46 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRS21531DSPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 1334 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+115.46 грн
10+81.34 грн
95+66.03 грн
190+59.06 грн
285+57.62 грн
570+55.49 грн
1045+53.06 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRS2181SPBF description INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
IRS2181SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 2049 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+158.08 грн
10+112.60 грн
95+92.37 грн
190+82.86 грн
285+80.95 грн
570+78.14 грн
1045+74.85 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS2183SPBF description irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS21864SPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS21864SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS2186SPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 3800 шт
В кошику  од. на суму  грн.
IRS2541SPBF IRS254%280%2C1%29%28S%29PbF.pdf
IRS2541SPBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8SOIC
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-SOIC
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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XC888CM8FFA5VACKXUMA1 Infineon-XC88XCLM-DS-v01_02-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40c4a9e0afb&ack=t
XC888CM8FFA5VACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 103.2MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Part Status: Obsolete
Number of I/O: 48
DigiKey Programmable: Not Verified
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IRFS38N20DPBF irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181
IRFS38N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 43A D2PAK
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
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IPS7091GPBF IPS7091%28G%2CS%29PbF.pdf
IPS7091GPBF
Виробник: Infineon Technologies
Description: IC SWITCH IPS HIGH SIDE 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Current - Output (Max): 1.5A
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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IPS7091GTRPBF IPS7091%28G%2CS%29PbF.pdf
IPS7091GTRPBF
Виробник: Infineon Technologies
Description: IC SWITCH IPS HIGH SIDE 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Output (Max): 1.5A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IPS7091GTRPBF IPS7091%28G%2CS%29PbF.pdf
IPS7091GTRPBF
Виробник: Infineon Technologies
Description: IC SWITCH IPS HIGH SIDE 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Output (Max): 1.5A
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IRAUDAMP4 iraudamp4.pdf
IRAUDAMP4
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRF6645 IRS20955
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±25V ~ 35V
Max Output Power x Channels @ Load: 170W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IRF6645, IRS20955
Supplied Contents: Board(s)
Part Status: Obsolete
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IRPLLNR7 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2166DPBF
Utilized IC / Part: IRS2166DPBF
Contents: Board(s)
Type: Opto/Lighting
Function: Ballast Control
Packaging: Box
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IRDC3651 description ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e
Виробник: Infineon Technologies
Description: KIT REF DESIGN SYNCH BUCK REG
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IR3651S
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 100kHz
Current - Output: 10A
Voltage - Input: 12V ~ 100V
Voltage - Output: 3.3V
Packaging: Box
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IPS1041LPBF IPS1041%28L%2CR%29PbF%2CIPS1042GPbF.pdf
IPS1041LPBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: SOT-223
Ratio - Input:Output: 1:1
Current - Output (Max): 1.95A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
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IPS1042GPBF description IPS1041%28L%2CR%29PbF%2CIPS1042GPbF.pdf
IPS1042GPBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 700mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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AUXHA1051LTR IPS1051LPbF%2CIPS1052GPbF.pdf
AUXHA1051LTR
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: SOT-223
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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98-0478PBF IPS1051LPbF%2CIPS1052GPbF.pdf
98-0478PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Part Status: Obsolete
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IPS6041GPBF IPS6041GPBF.pdf
IPS6041GPBF
Виробник: Infineon Technologies
Description: INTELLIGENT PWR SW 1CH 8SOIC
Rds On (Typ): 110mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Output (Max): 1.6A
Voltage - Load: 6V ~ 28V
Input Type: Non-Inverting
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IRF6643TR1PBF irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b
IRF6643TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 6.2A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 42.5kHz ~ 46.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply: 10 mA
Dimming: No
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Мінімальне замовлення: 2500 шт
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IRFR2607ZPBF irfr2607zpbf.pdf?fileId=5546d462533600a401535630d6e42083
IRFR2607ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO252-3-901|DPAK
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRF6643TR1PBF irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b
IRF6643TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 6.2A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAS CTR 46.5KHZ 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -25°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 42.5kHz ~ 46.5kHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Dimming: No
Current - Supply: 10 mA
на замовлення 2476 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+208.45 грн
10+150.29 грн
25+137.54 грн
100+116.00 грн
250+109.76 грн
500+106.00 грн
1000+101.21 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6643TRPBF irf6643pbf.pdf?fileId=5546d462533600a4015355ec388f1a4b
IRF6643TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 6.2A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
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CY14B256K-SP45XC cy14b256k_8.pdf
CY14B256K-SP45XC
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.45V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику  од. на суму  грн.
CY24488ZXCT Infineon-CY24488_Quad-PLL_Clock_Generator_with_Two-Wire_Serial_Interface-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4f18e3a5a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
CY24488ZXCT
Виробник: Infineon Technologies
Description: IC PLL CLK GEN I2C 16-TSSOP
товару немає в наявності
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CY4638
Виробник: Infineon Technologies
Description: KIT WIRELESSUSB VOIP
Packaging: Bulk
For Use With/Related Products: CYRF6936
Type: Transceiver
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYRF6936
Supplied Contents: Board(s), Cable(s), Power Supply
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CY62137CV30LL-70BVXE CY62137CV%2830%2C33%29MoBL.pdf
CY62137CV30LL-70BVXE
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.3V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY62158EV30LL-45BVXI Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62158EV30LL-45BVXI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+513.76 грн
10+460.04 грн
25+446.14 грн
50+408.81 грн
100+398.97 грн
В кошику  од. на суму  грн.
CY62158EV30LL-45BVXIT Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62158EV30LL-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY62167DV18LL-55BVXIT CY62167DV18%20MoBL.pdf
CY62167DV18LL-55BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1019BN-15ZXC
CY7C1019BN-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 585 шт
В кошику  од. на суму  грн.
CY7C1019BN-15ZXCT
CY7C1019BN-15ZXCT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CY7C1021BNL-15ZSXA Infineon-CY7C1021BN_1-Mbit_(64_K_X_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb043307f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021BNL-15ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY7C1021BNL-15ZSXAT Infineon-CY7C1021BN_1-Mbit_(64_K_X_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdb043307f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021BNL-15ZSXAT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY7C1021CV33-12BAXI CY7C1021CV33%20Rev.H.pdf
CY7C1021CV33-12BAXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 12 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 12ns
Supplier Device Package: 48-FBGA (7x7)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 416 шт
В кошику  од. на суму  грн.
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