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BSO300N03S BSO300N03S Infineon Technologies BSO300N03S.pdf Description: MOSFET N-CH 30V 5.7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
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BSP170PL6327HTSA1 BSP170PL6327HTSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fdad470576f Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP295L6327HTSA1 BSP295L6327HTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
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BSP315PL6327HTSA1 BSP315PL6327HTSA1 Infineon Technologies BSP315P.pdf Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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BSP372L6327HTSA1 BSP372L6327HTSA1 Infineon Technologies BSP372.pdf Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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BSP373L6327HTSA1 BSP373L6327HTSA1 Infineon Technologies BSP373.pdf Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS123L6327HTSA1 BSS123L6327HTSA1 Infineon Technologies DS_448_BSS123.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS138NL6327HTSA1 BSS138NL6327HTSA1 Infineon Technologies BSS138N.pdf Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Infineon Technologies Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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ESD8V0L1B-02LRH E6327 ESD8V0L1B-02LRH E6327 Infineon Technologies ESD8V0L.pdf Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
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ESD8V0L2B03LE6327XTMA1 ESD8V0L2B03LE6327XTMA1 Infineon Technologies ESD8V0L.pdf Description: TVS DIODE 22VWM 26VC TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: PG-TSLP-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 23V (Typ)
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power Line Protection: No
Part Status: Obsolete
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IPB03N03LA G IPB03N03LA G Infineon Technologies IPB03N03LAG_Rev1.6.pdf Description: MOSFET N-CH 25V 80A TO263-3
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IPB03N03LB G IPB03N03LB G Infineon Technologies IPB03N03LB_Rev0.94_G.pdf Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
3+126.92 грн
10+104.36 грн
100+90.29 грн
Мінімальне замовлення: 3
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IPB048N06LGATMA1 IPB048N06LGATMA1 Infineon Technologies IP%28B%2CP%29048N06L%2BG%2BRev1.13.pdf Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V
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IPB04N03LA G IPB04N03LA G Infineon Technologies IPB04N03LA_Rev1.7_G.pdf Description: MOSFET N-CH 25V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
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IPB085N06L G IPB085N06L G Infineon Technologies IPB%2CIPP085N06L_G.pdf Description: MOSFET N-CH 60V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
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IPB100N06S3L-04 IPB100N06S3L-04 Infineon Technologies IP%28B%2CI%2CP%29N06S3L-04.pdf Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
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IPB110N06L G IPB110N06L G Infineon Technologies IP%28B%2CP%29110N06L_G.pdf Description: MOSFET N-CH 60V 78A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V
Vgs(th) (Max) @ Id: 2V @ 94µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
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IPB13N03LB G IPB13N03LB G Infineon Technologies IPB13N03LB_Rev0.93_G.pdf Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
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IPB80N06S3L-05 IPB80N06S3L-05 Infineon Technologies IPB(I,P)N06S3L-05.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 69A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
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IPB80N06S3L-06 IPB80N06S3L-06 Infineon Technologies IPB(I,P)80N06S3L-06.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
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IPBH6N03LA G IPBH6N03LA G Infineon Technologies IPBH6N03LAG_Rev1.2.pdf Description: MOSFET N-CH 25V 50A TO-263
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IPD03N03LA G IPD03N03LA G Infineon Technologies IPD03N03LAG_Rev1.3.pdf Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
3+115.38 грн
10+96.03 грн
100+87.28 грн
500+78.37 грн
1000+77.79 грн
Мінімальне замовлення: 3
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IPD03N03LB G IPD03N03LB G Infineon Technologies IP%28D%2CS%2903N03LB_G.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
товару немає в наявності
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IPD04N03LB G IPD04N03LB G Infineon Technologies IP%28D%2CF%2CS%2CU%2904N03LB_G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
товару немає в наявності
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IPD06N03LB G IPD06N03LB G Infineon Technologies IPD06N03LBG.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
товару немає в наявності
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IPD127N06LGBTMA1 IPD127N06LGBTMA1 Infineon Technologies IPD127N06LG%2BRev1.2.pdf?fileId=db3a30431f848401011fc786d4077a24&folderId=db3a30431a5c32f2011a809773886508 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
товару немає в наявності
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IPD12N03LB G IPD12N03LB G Infineon Technologies ipd12n03lb_v1.6_g.pdf Description: MOSFET N-CH 30V 30A TO252-3
товару немає в наявності
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IPD640N06LGBTMA1 IPD640N06LGBTMA1 Infineon Technologies IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b Description: MOSFET N-CH 60V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V
товару немає в наявності
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SMBT 3904 B5003 SMBT 3904 B5003 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
товару немає в наявності
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SMBT 3906 B5003 SMBT 3906 B5003 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS PNP 40V 0.2A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
товару немає в наявності
В кошику  од. на суму  грн.
SN7002N L6327 SN7002N L6327 Infineon Technologies SN7002N.pdf Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002W E6327 SN7002W E6327 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SPB02N60S5ATMA1 SPB02N60S5ATMA1 Infineon Technologies SPB02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c983b4732 Description: MOSFET N-CH 600V 1.8A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
6+57.69 грн
10+43.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SPB04N60S5ATMA1 SPB04N60S5ATMA1 Infineon Technologies SPB04N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c9e11473a Description: MOSFET N-CH 600V 4.5A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
товару немає в наявності
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SPB12N50C3ATMA1 SPB12N50C3ATMA1 Infineon Technologies SPB12N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cee0447d4 Description: MOSFET N-CH 560V 11.6A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
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SPB16N50C3ATMA1 SPB16N50C3ATMA1 Infineon Technologies SPB16N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d040147ec Description: MOSFET N-CH 560V 16A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
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SPB18P06PGATMA1 SPB18P06PGATMA1 Infineon Technologies SPB18P06P_Rev1.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bd62a460d Description: MOSFET P-CH 60V 18.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 81.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
4+109.61 грн
10+60.39 грн
100+44.55 грн
500+36.30 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPB20N60S5ATMA1 SPB20N60S5ATMA1 Infineon Technologies SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e Description: MOSFET N-CH 600V 20A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPB21N50C3ATMA1 SPB21N50C3ATMA1 Infineon Technologies SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 2448 шт:
термін постачання 21-31 дні (днів)
2+314.82 грн
10+199.91 грн
100+141.39 грн
500+122.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPB80P06PGATMA1 SPB80P06PGATMA1 Infineon Technologies SPB80P06P+G_Rev+1.6_.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42add964408 Description: MOSFET P-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3261 шт:
термін постачання 21-31 дні (днів)
1+348.61 грн
10+224.67 грн
100+158.97 грн
500+122.91 грн
В кошику  од. на суму  грн.
SPD01N60C3BTMA1 SPD01N60C3BTMA1 Infineon Technologies SPD_U01N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e18974951 Description: MOSFET N-CH 650V 800MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPD06N60C3BTMA1 SPD06N60C3BTMA1 Infineon Technologies SPD06N60C3_Rev.2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f1b26e8013f1de2f997013c Description: MOSFET N-CH 650V 6.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
товару немає в наявності
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SPD07N20 SPD07N20 Infineon Technologies SPD_07N20.pdf Description: MOSFET N-CH 200V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPD18P06P SPD18P06P Infineon Technologies SPD18P06P_Rev.3.4_.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404c85eb4ee3 Description: MOSFET P-CH 60V 18.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товару немає в наявності
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SPD50P03LGBTMA1 SPD50P03LGBTMA1 Infineon Technologies SPD50P03LG_Rev+1.8.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a3043156fd5730115c75829fc0ffa Description: MOSFET P-CH 30V 50A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
2+243.12 грн
10+152.21 грн
100+105.37 грн
500+80.11 грн
1000+74.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAS 70 B5003 BAS 70 B5003 Infineon Technologies bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12 Description: DIODE SCHOTTKY 70V 70MA SOT23-3
товару немає в наявності
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BAT 54-04 B5003 BAT 54-04 B5003 Infineon Technologies BAT54_Series.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT23
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BAT 54-05 B5003 BAT 54-05 B5003 Infineon Technologies BAT54_Series.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT23
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BFR 705L3RH E6327 BFR 705L3RH E6327 Infineon Technologies BFR705L3RH.pdf Description: TRANS RF BIPO NPN 10MA TSLP-3-9
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BSC029N025S G BSC029N025S G Infineon Technologies BSC029N025S_Rev1.0.pdf Description: MOSFET N-CH 25V 100A TDSON-8
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IPBH6N03LA G IPBH6N03LA G Infineon Technologies IPBH6N03LAG_Rev1.2.pdf Description: MOSFET N-CH 25V 50A TO-263
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SPB80P06P G SPB80P06P G Infineon Technologies SPP80P06P_Rev1.2.pdf?folderId=db3a304412b407950112b42bb37a45e5&fileId=db3a304412b407950112b42bb3e945e6&location=.en.product.findProductTypeByName.html_dgdl_SPP80P06P_Rev1.2.pdf Description: MOSFET P-CH 60V 80A TO-263
на замовлення 7616 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRF1324S-7PPBF IRF1324S-7PPBF Infineon Technologies irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9 Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
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IRFSL3207ZPBF IRFSL3207ZPBF Infineon Technologies irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161 Description: MOSFET N-CH 75V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
на замовлення 880 шт:
термін постачання 21-31 дні (днів)
2+182.96 грн
50+139.69 грн
100+119.73 грн
500+109.90 грн
Мінімальне замовлення: 2
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IRGP4068D-EPBF IRGP4068D-EPBF Infineon Technologies irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458 Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRGP4068DPBF IRGP4068DPBF Infineon Technologies irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458 Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRGS4055PBF IRGS4055PBF Infineon Technologies irgb4055pbf.pdf Description: IGBT 300V 110A 255W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 44ns/245ns
Test Condition: 180V, 35A, 10Ohm
Gate Charge: 132 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 255 W
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IRGS4065PBF IRGS4065PBF Infineon Technologies irgb4065pbf.pdf Description: IGBT 300V 70A 178W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/170ns
Test Condition: 180V, 25A, 10Ohm
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 178 W
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IR1167BSPBF IR1167BSPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BSO300N03S BSO300N03S.pdf
BSO300N03S
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 5.7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
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BSP170PL6327HTSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fdad470576f
BSP170PL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP295L6327HTSA1 Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
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BSP315PL6327HTSA1 BSP315P.pdf
BSP315PL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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BSP372L6327HTSA1 BSP372.pdf
BSP372L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.7A, 5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±14V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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BSP373L6327HTSA1 BSP373.pdf
BSP373L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS123L6327HTSA1 DS_448_BSS123.pdf
BSS123L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS138NL6327HTSA1 BSS138N.pdf
BSS138NL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUZ30AH3045AATMA1 Buz30a+H3045A+Rev+2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a304325305e6d012596cd45e4290f
BUZ30AH3045AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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ESD8V0L1B-02LRH E6327 ESD8V0L.pdf
ESD8V0L1B-02LRH E6327
Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
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ESD8V0L2B03LE6327XTMA1 ESD8V0L.pdf
ESD8V0L2B03LE6327XTMA1
Виробник: Infineon Technologies
Description: TVS DIODE 22VWM 26VC TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: PG-TSLP-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 23V (Typ)
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power Line Protection: No
Part Status: Obsolete
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IPB03N03LA G IPB03N03LAG_Rev1.6.pdf
IPB03N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO263-3
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IPB03N03LB G IPB03N03LB_Rev0.94_G.pdf
IPB03N03LB G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.92 грн
10+104.36 грн
100+90.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB048N06LGATMA1 IP%28B%2CP%29048N06L%2BG%2BRev1.13.pdf
IPB048N06LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V
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IPB04N03LA G IPB04N03LA_Rev1.7_G.pdf
IPB04N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
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IPB085N06L G IPB%2CIPP085N06L_G.pdf
IPB085N06L G
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
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IPB100N06S3L-04 IP%28B%2CI%2CP%29N06S3L-04.pdf
IPB100N06S3L-04
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
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IPB110N06L G IP%28B%2CP%29110N06L_G.pdf
IPB110N06L G
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 78A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V
Vgs(th) (Max) @ Id: 2V @ 94µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
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IPB13N03LB G IPB13N03LB_Rev0.93_G.pdf
IPB13N03LB G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
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IPB80N06S3L-05 IPB(I,P)N06S3L-05.pdf
IPB80N06S3L-05
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 69A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
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IPB80N06S3L-06 IPB(I,P)80N06S3L-06.pdf
IPB80N06S3L-06
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 56A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V
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IPBH6N03LA G IPBH6N03LAG_Rev1.2.pdf
IPBH6N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO-263
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IPD03N03LA G IPD03N03LAG_Rev1.3.pdf
IPD03N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.38 грн
10+96.03 грн
100+87.28 грн
500+78.37 грн
1000+77.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD03N03LB G IP%28D%2CS%2903N03LB_G.pdf
IPD03N03LB G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
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IPD04N03LB G IP%28D%2CF%2CS%2CU%2904N03LB_G.pdf
IPD04N03LB G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
товару немає в наявності
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IPD06N03LB G IPD06N03LBG.pdf
IPD06N03LB G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
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IPD127N06LGBTMA1 IPD127N06LG%2BRev1.2.pdf?fileId=db3a30431f848401011fc786d4077a24&folderId=db3a30431a5c32f2011a809773886508
IPD127N06LGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 30 V
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IPD12N03LB G ipd12n03lb_v1.6_g.pdf
IPD12N03LB G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
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IPD640N06LGBTMA1 IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b
IPD640N06LGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 30 V
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SMBT 3904 B5003 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT 3904 B5003
Виробник: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
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SMBT 3906 B5003 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT 3906 B5003
Виробник: Infineon Technologies
Description: TRANS PNP 40V 0.2A PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
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SN7002N L6327 SN7002N.pdf
SN7002N L6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002W E6327 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SPB02N60S5ATMA1 SPB02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c983b4732
SPB02N60S5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.69 грн
10+43.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SPB04N60S5ATMA1 SPB04N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c9e11473a
SPB04N60S5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
товару немає в наявності
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SPB12N50C3ATMA1 SPB12N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cee0447d4
SPB12N50C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
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SPB16N50C3ATMA1 SPB16N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d040147ec
SPB16N50C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 16A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPB18P06PGATMA1 SPB18P06P_Rev1.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42bd62a460d
SPB18P06PGATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 18.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 81.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.61 грн
10+60.39 грн
100+44.55 грн
500+36.30 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPB20N60S5ATMA1 SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e
SPB20N60S5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
SPB21N50C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 2448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+314.82 грн
10+199.91 грн
100+141.39 грн
500+122.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPB80P06PGATMA1 SPB80P06P+G_Rev+1.6_.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42add964408
SPB80P06PGATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3261 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+348.61 грн
10+224.67 грн
100+158.97 грн
500+122.91 грн
В кошику  од. на суму  грн.
SPD01N60C3BTMA1 SPD_U01N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e18974951
SPD01N60C3BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 800MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товару немає в наявності
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SPD06N60C3BTMA1 SPD06N60C3_Rev.2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f1b26e8013f1de2f997013c
SPD06N60C3BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPD07N20 SPD_07N20.pdf
SPD07N20
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
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SPD18P06P SPD18P06P_Rev.3.4_.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404c85eb4ee3
SPD18P06P
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 18.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товару немає в наявності
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SPD50P03LGBTMA1 SPD50P03LG_Rev+1.8.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a3043156fd5730115c75829fc0ffa
SPD50P03LGBTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+243.12 грн
10+152.21 грн
100+105.37 грн
500+80.11 грн
1000+74.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAS 70 B5003 bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12
BAS 70 B5003
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
товару немає в наявності
В кошику  од. на суму  грн.
BAT 54-04 B5003 BAT54_Series.pdf
BAT 54-04 B5003
Виробник: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 30V SOT23
товару немає в наявності
В кошику  од. на суму  грн.
BAT 54-05 B5003 BAT54_Series.pdf
BAT 54-05 B5003
Виробник: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 30V SOT23
товару немає в наявності
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BFR 705L3RH E6327 BFR705L3RH.pdf
BFR 705L3RH E6327
Виробник: Infineon Technologies
Description: TRANS RF BIPO NPN 10MA TSLP-3-9
товару немає в наявності
В кошику  од. на суму  грн.
BSC029N025S G BSC029N025S_Rev1.0.pdf
BSC029N025S G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 100A TDSON-8
товару немає в наявності
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IPBH6N03LA G IPBH6N03LAG_Rev1.2.pdf
IPBH6N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO-263
товару немає в наявності
В кошику  од. на суму  грн.
SPB80P06P G SPP80P06P_Rev1.2.pdf?folderId=db3a304412b407950112b42bb37a45e5&fileId=db3a304412b407950112b42bb3e945e6&location=.en.product.findProductTypeByName.html_dgdl_SPP80P06P_Rev1.2.pdf
SPB80P06P G
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 80A TO-263
на замовлення 7616 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRF1324S-7PPBF irf1324s-7ppbf.pdf?fileId=5546d462533600a4015355dad16e18a9
IRF1324S-7PPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V
товару немає в наявності
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IRFSL3207ZPBF irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161
IRFSL3207ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
на замовлення 880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.96 грн
50+139.69 грн
100+119.73 грн
500+109.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGP4068D-EPBF irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458
IRGP4068D-EPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товару немає в наявності
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IRGP4068DPBF irgp4068dpbf.pdf?fileId=5546d462533600a4015356560fc12458
IRGP4068DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/145ns
Switching Energy: 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
товару немає в наявності
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IRGS4055PBF irgb4055pbf.pdf
IRGS4055PBF
Виробник: Infineon Technologies
Description: IGBT 300V 110A 255W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 44ns/245ns
Test Condition: 180V, 35A, 10Ohm
Gate Charge: 132 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 255 W
товару немає в наявності
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IRGS4065PBF irgb4065pbf.pdf
IRGS4065PBF
Виробник: Infineon Technologies
Description: IGBT 300V 70A 178W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/170ns
Test Condition: 180V, 25A, 10Ohm
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 178 W
товару немає в наявності
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IR1167BSPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167BSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
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