| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS34ML04G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 4Gb FLASH Kind of interface: parallel Case: TSOP48 Interface: parallel 8bit Operating voltage: 2.7...3.6V Kind of memory: NAND |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. | |
| IS34ML02G081-TLI-TR | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 2Gb FLASH Kind of interface: parallel Kind of package: reel; tape Case: TSOP48 Interface: parallel 8bit Operating voltage: 2.7...3.6V Kind of memory: NAND |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |
| IS34ML02G084-TLI-TR | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 2Gb FLASH Kind of interface: parallel Kind of package: reel; tape Case: TSOP48 Interface: parallel 8bit Operating voltage: 2.7...3.6V Kind of memory: NAND |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |
| IS46LR16320C-6BLA1 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 166MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA60 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |
| IS46LR16320C-6BLA1-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 166MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of package: reel; tape Case: TFBGA60 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| IS46LR16320C-6BLA2 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of memory: SDRAM Mounting: SMD Supply voltage: 1.7...1.95V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...105°C Clock frequency: 166MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA60 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |
|
IS61C1024AL-12JLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Part status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| IS42S16160J-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Supply voltage: 3...3.6V DC Access time: 7ns Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 143MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TSOP54 II Kind of memory: SDRAM |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS42S16160J-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Mounting: SMD Supply voltage: 3...3.6V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TSOP54 II Kind of memory: SDRAM |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS42S16160J-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Mounting: SMD Supply voltage: 3...3.6V DC Access time: 7ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 143MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TSOP54 II Kind of memory: SDRAM |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS45S16160J-6TLA1 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Mounting: SMD Supply voltage: 3...3.6V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TSOP54 II Kind of memory: SDRAM |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS42S16160J-6BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Supply voltage: 3...3.6V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM |
товару немає в наявності |
Мінімальне замовлення: 348 шт В кошику од. на суму грн. | |
| IS42S16160J-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Supply voltage: 3...3.6V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM |
товару немає в наявності |
Мінімальне замовлення: 348 шт В кошику од. на суму грн. | |
| IS42S16160J-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Supply voltage: 3...3.6V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: reel; tape Case: TFBGA54 Kind of memory: SDRAM |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS42S16160J-6TL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Mounting: SMD Supply voltage: 3...3.6V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: reel; tape Case: TSOP54 II Kind of memory: SDRAM |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |
| IS42S16160J-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Mounting: SMD Supply voltage: 3...3.6V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: reel; tape Case: TSOP54 II Kind of memory: SDRAM |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |
| IS42S16160J-7BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Supply voltage: 3...3.6V DC Access time: 7ns Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 143MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM |
товару немає в наявності |
Мінімальне замовлення: 348 шт В кошику од. на суму грн. | |
| IS42S16160J-7BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Mounting: SMD Supply voltage: 3...3.6V DC Access time: 7ns Type of integrated circuit: DRAM memory Operating temperature: -40...85°C Clock frequency: 143MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: in-tray; tube Case: TFBGA54 Kind of memory: SDRAM |
товару немає в наявності |
Мінімальне замовлення: 348 шт В кошику од. на суму грн. | |
| IS42RM32160E-75BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.3...3V DC |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |
| IS43QR16512A-083TBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C Memory: 8Gb DRAM Supply voltage: 1.2V DC Kind of memory: DDR4; SDRAM Case: TWBGA96 Mounting: SMD Access time: 14.16ns Type of integrated circuit: DRAM memory Operating temperature: 0...95°C Kind of interface: parallel Memory organisation: 512Mx16bit Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. | |
| IS43QR16512A-083TBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C Memory: 8Gb DRAM Supply voltage: 1.2V DC Kind of memory: DDR4; SDRAM Case: TWBGA96 Mounting: SMD Access time: 14.16ns Type of integrated circuit: DRAM memory Operating temperature: -40...95°C Kind of interface: parallel Memory organisation: 512Mx16bit Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. | |
| IS43TR16512B-125KBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Memory: 8Gb DRAM Clock frequency: 933MHz Supply voltage: 1.5V DC Kind of memory: DDR3; SDRAM Case: TWBGA96 Mounting: SMD Access time: 13.75ns Type of integrated circuit: DRAM memory Operating temperature: 0...95°C Kind of interface: parallel Memory organisation: 512Mx16bit Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. | |
| IS43TR16512B-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Memory: 8Gb DRAM Clock frequency: 933MHz Supply voltage: 1.5V DC Kind of memory: DDR3; SDRAM Case: TWBGA96 Mounting: SMD Access time: 13.75ns Type of integrated circuit: DRAM memory Operating temperature: -40...95°C Kind of interface: parallel Memory organisation: 512Mx16bit Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. | |
| IS43TR81024B-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC Memory: 8Gb DRAM Clock frequency: 933MHz Supply voltage: 1.5V DC Kind of memory: DDR3; SDRAM Case: TWBGA78 Mounting: SMD Access time: 13.75ns Type of integrated circuit: DRAM memory Operating temperature: -40...95°C Kind of interface: parallel Memory organisation: 1Gx8bit Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. | |
| IS42SM32100D-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 32Mb DRAM Memory organisation: 512kx32bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.7...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS42SM32100D-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 32Mb DRAM Memory organisation: 512kx32bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS61WV25616BLL-10TL | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS62WV25616BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
| IS64WV25616BLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS64WV25616BLL-10BLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS61WV25616BLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS61WV25616BLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS64WV25616BLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 135 шт В кошику од. на суму грн. | |
| IS64WV25616BLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
| IS61WV25616BLL-10TL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
| IS62WV25616BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | |
| IS62WV25616BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| IS62C25616BL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS62C25616BL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
| IS62WV25616BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |
| IS61WV25616BLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
| IS61C1024AL-12HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |
|
IS64LF204818B-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. |
|
IS61LF204818B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. |
| IS61NLP204818B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 3.3V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. |
| IS34ML04G081-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 4Gb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Kind of memory: NAND
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 4Gb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Kind of memory: NAND
товару немає в наявності
Мінімальне замовлення: 96 шт
В кошику
од. на суму грн.
| IS34ML02G081-TLI-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Kind of memory: NAND
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Kind of memory: NAND
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS34ML02G084-TLI-TR |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Kind of memory: NAND
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 2Gb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: TSOP48
Interface: parallel 8bit
Operating voltage: 2.7...3.6V
Kind of memory: NAND
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS46LR16320C-6BLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA60
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IS46LR16320C-6BLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Case: TFBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Case: TFBGA60
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS46LR16320C-6BLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA60
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...105°C
Clock frequency: 166MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA60
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IS61C1024AL-12JLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160J-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160J-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160J-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS45S16160J-6TLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TSOP54 II
Kind of memory: SDRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160J-6BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
товару немає в наявності
Мінімальне замовлення: 348 шт
В кошику
од. на суму грн.
| IS42S16160J-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
товару немає в наявності
Мінімальне замовлення: 348 шт
В кошику
од. на суму грн.
| IS42S16160J-6BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Case: TFBGA54
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Case: TFBGA54
Kind of memory: SDRAM
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS42S16160J-6TL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Case: TSOP54 II
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Case: TSOP54 II
Kind of memory: SDRAM
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS42S16160J-6TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Case: TSOP54 II
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Case: TSOP54 II
Kind of memory: SDRAM
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS42S16160J-7BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
товару немає в наявності
Мінімальне замовлення: 348 шт
В кошику
од. на суму грн.
| IS42S16160J-7BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Mounting: SMD
Supply voltage: 3...3.6V DC
Access time: 7ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...85°C
Clock frequency: 143MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: in-tray; tube
Case: TFBGA54
Kind of memory: SDRAM
товару немає в наявності
Мінімальне замовлення: 348 шт
В кошику
од. на суму грн.
| IS42RM32160E-75BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.3...3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.3...3V DC
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| IS43QR16512A-083TBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику
од. на суму грн.
| IS43QR16512A-083TBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику
од. на суму грн.
| IS43TR16512B-125KBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Supply voltage: 1.5V DC
Kind of memory: DDR3; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Supply voltage: 1.5V DC
Kind of memory: DDR3; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
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Мінімальне замовлення: 136 шт
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| IS43TR16512B-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Supply voltage: 1.5V DC
Kind of memory: DDR3; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Memory: 8Gb DRAM
Clock frequency: 933MHz
Supply voltage: 1.5V DC
Kind of memory: DDR3; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику
од. на суму грн.
| IS43TR81024B-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Memory: 8Gb DRAM
Clock frequency: 933MHz
Supply voltage: 1.5V DC
Kind of memory: DDR3; SDRAM
Case: TWBGA78
Mounting: SMD
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 1Gx8bit
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Memory: 8Gb DRAM
Clock frequency: 933MHz
Supply voltage: 1.5V DC
Kind of memory: DDR3; SDRAM
Case: TWBGA78
Mounting: SMD
Access time: 13.75ns
Type of integrated circuit: DRAM memory
Operating temperature: -40...95°C
Kind of interface: parallel
Memory organisation: 1Gx8bit
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику
од. на суму грн.
| IS42SM32100D-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.7...3.6V DC
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В кошику
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| IS42SM32100D-6BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 512kx32bitx2; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 32Mb DRAM
Memory organisation: 512kx32bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS61WV25616BLL-10TL |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS62WV25616BLL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS64WV25616BLL-10BLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS64WV25616BLL-10BLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS61WV25616BLL-10BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS61WV25616BLL-10BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS64WV25616BLL-10CTLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 135 шт
В кошику
од. на суму грн.
| IS64WV25616BLL-10CTLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS61WV25616BLL-10TL-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS62WV25616BLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IS62WV25616BLL-55BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS62C25616BL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62C25616BL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS62WV25616BLL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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В кошику
од. на суму грн.
| IS61WV25616BLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IS61C1024AL-12HLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS64LF204818B-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61LF204818B-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61NLP204818B-250B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.




