| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS25WP032D-JBLE | ISSI |
 Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Kind of interface: serial Mounting: SMD Case: SO8 Operating temperature: -40...105°C Operating voltage: 1.65...1.95V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
на замовлення 85 шт: термін постачання 14-30 дні (днів) |
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IS25LP032D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Kind of interface: serial Mounting: SMD Case: SOP8 Operating temperature: -40...105°C Operating voltage: 2.3...3.6V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS25LP032D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Kind of interface: serial Mounting: SMD Case: SOP8 Operating temperature: -40...105°C Operating voltage: 2.3...3.6V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS25LP032D-JBLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Kind of package: in-tray; tube Kind of interface: serial Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.3...3.6V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS25LP032D-JNLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Kind of package: in-tray; tube Kind of interface: serial Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.3...3.6V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS25WP032D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Dimensions: 6x5mm Kind of interface: serial Mounting: SMD Case: WSON8 Operating temperature: -40...105°C Operating voltage: 1.65...1.95V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS61LF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS61LF51218A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS61LF51218B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61LF51218B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61LPS51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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IS61NLF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS61NLF51218B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61NLF51218B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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IS61NLP51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 200ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx8bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS43R16160F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16800E-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 128Mb DRAM Clock frequency: 200MHz Memory organisation: 2Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 32Mx16bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160D-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS46TR16128CL-125KBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
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В кошику од. на суму грн. | |||||||
| IS46TR16128CL-125KBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...105°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR16128CL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR16128CL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR16128CL-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
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| IS25WP032D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
на замовлення 85 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 124.40 грн |
| 5+ | 100.45 грн |
| 25+ | 85.38 грн |
| IS25LP032D-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
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| IS25LP032D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
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| IS25LP032D-JBLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of package: in-tray; tube
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of package: in-tray; tube
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
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| IS25LP032D-JNLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of package: in-tray; tube
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of package: in-tray; tube
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
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| IS25WP032D-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Dimensions: 6x5mm
Kind of interface: serial
Mounting: SMD
Case: WSON8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Dimensions: 6x5mm
Kind of interface: serial
Mounting: SMD
Case: WSON8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
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| IS61LF51218A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
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| IS61LF51218A-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
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| IS61LF51218B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
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| IS61LF51218B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
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| IS61LPS51218A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
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| IS61NLF51218A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
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| IS61NLF51218B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
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| IS61NLF51218B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
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| IS61NLP51218A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 200ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx8bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 200ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx8bit
Kind of package: in-tray; tube
Kind of interface: parallel
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| IS43R16160F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320F-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16800E-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16320D-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160D-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS43R16160D-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
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| IS46TR16128CL-125KBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS46TR16128CL-125KBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS43TR16128CL-125KBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS43TR16128CL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR16128CL-125KBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
В кошику
од. на суму грн.