| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS43R16160F-5BL | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43R16160F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Mounting: SMD Case: TFBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: reel; tape Kind of memory: DDR1; SDRAM Supply voltage: 2.5V DC Access time: 5ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||
| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43R16160F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160F-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS43R16160F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS43R16160F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43R16160F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Mounting: SMD Case: TWBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of package: reel; tape Kind of memory: DDR1; SDRAM Supply voltage: 2.5V DC Access time: 5ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 108 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 108 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 108 шт В кошику од. на суму грн. | |||||||||
| IS43R16320F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS43R16800E-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 128Mb DRAM Clock frequency: 200MHz Memory organisation: 2Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS43R16320D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 32Mx16bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160D-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43R16160D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS46TR16128CL-125KBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS46TR16128CL-125KBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...105°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43TR16128CL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS43TR16128CL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43TR16128CL-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
 |
IS42S32400F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Kind of package: tube Kind of memory: SDRAM Mounting: SMD Supply voltage: 3.3V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 128Mb DRAM Kind of interface: parallel Memory organisation: 4Mx32bit Case: TSOP86 II |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| IS43LR16400C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
| IS45S16400J-6CTLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of memory: SDRAM Kind of interface: parallel Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS45S16400J-7CTLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of memory: SDRAM Kind of interface: parallel Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS25LP032D-JTLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 32Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||
| IS25LP512MH-RHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||
| IS46TR16640ED-15HBLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Case: TWBGA96 Mounting: SMD Operating temperature: -40...95°C Supply voltage: 1.5V DC Kind of package: in-tray; tube Access time: 13.5ns Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS46TR16640ED-15HBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Case: TWBGA96 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 1.5V DC Kind of package: in-tray; tube Access time: 13.5ns Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS42SM16400M-75BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 133MHz Access time: 7.5ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 348 шт В кошику од. на суму грн. | |||||||||
| IS43TR16256B-107MBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.91ns |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43TR16256B-125KBL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: 0...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.75ns |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS43TR16256B-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.75ns |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||||
| IS29GL064-70TLET | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS29GL064-70TLEU | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS29GL064-70TLEB | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS29GL064-70TLET-TR | ISSI |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||
| IS61LF51236B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 6.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||||
| IS61LF51236B-7.5B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. | |||||||||
| IS61LF51236B-7.5B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||
| IS61LF51236B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||||
| IS61LF51236B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Kind of memory: SRAM Access time: 7.5ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||
| IS61LPS51236B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. | |||||||||
| IS61LPS51236B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||
| IS61LPS51236B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Type of integrated circuit: SRAM memory Case: QFP100 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Memory organisation: 512kx36bit |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||||
 |
IS61WV20488BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 128 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| IS61WV204816BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
товару немає в наявності |
Мінімальне замовлення: 96 шт В кошику од. на суму грн. | |||||||||
| IS43LR16160G-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
| IS43LR16160G-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Mounting: SMD Case: TFBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: reel; tape Kind of memory: LPDDR; SDRAM Supply voltage: 1.7...1.95V DC Access time: 6ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||
| IS43LR16160G-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
| IS43LR16160G-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||
| IS43LR16200D-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| IS43R16160F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16160F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16160F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16160F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160F-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16160F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16160F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16160F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16320F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16320F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 108 шт
В кошику
од. на суму грн.
| IS43R16320F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16320F-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16320F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 108 шт
В кошику
од. на суму грн.
| IS43R16320F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 108 шт
В кошику
од. на суму грн.
| IS43R16320F-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16800E-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16320D-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160D-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160D-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS46TR16128CL-125KBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS46TR16128CL-125KBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43TR16128CL-125KBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43TR16128CL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43TR16128CL-125KBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS42S32400F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Kind of package: tube
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 3.3V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bit
Case: TSOP86 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Kind of package: tube
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 3.3V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bit
Case: TSOP86 II
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 438.94 грн |
| 5+ | 366.49 грн |
| IS43LR16400C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IS45S16400J-6CTLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS45S16400J-7CTLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS25LP032D-JTLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| IS25LP512MH-RHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS46TR16640ED-15HBLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 190 шт
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од. на суму грн.
| IS46TR16640ED-15HBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS42SM16400M-75BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 133MHz
Access time: 7.5ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
товару немає в наявності
Мінімальне замовлення: 348 шт
В кошику
од. на суму грн.
| IS43TR16256B-107MBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.91ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.91ns
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43TR16256B-125KBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43TR16256B-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS29GL064-70TLET |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS29GL064-70TLEU |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS29GL064-70TLEB |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS29GL064-70TLET-TR |
|
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS61LF51236B-6.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 6.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 6.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61LF51236B-7.5B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.
| IS61LF51236B-7.5B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS61LF51236B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61LF51236B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS61LPS51236B-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.
| IS61LPS51236B-200B3LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Type of integrated circuit: SRAM memory
Case: TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS61LPS51236B-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61WV20488BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2229.90 грн |
| 5+ | 1892.83 грн |
| 25+ | 1704.14 грн |
| 100+ | 1597.63 грн |
| IS61WV204816BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товару немає в наявності
Мінімальне замовлення: 96 шт
В кошику
од. на суму грн.
| IS43LR16160G-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IS43LR16160G-6BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: LPDDR; SDRAM
Supply voltage: 1.7...1.95V DC
Access time: 6ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS43LR16160G-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IS43LR16160G-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IS43LR16200D-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.