| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Case: TFBGA60 Kind of interface: parallel Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
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| IS43R16320F-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Case: TWBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: reel; tape Case: TWBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320F-5BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Case: TWBGA60 Kind of interface: parallel Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32160D-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144 Kind of package: in-tray; tube Case: LFBGA144 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.6V DC Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32400E-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 200MHz Access time: 5ns Case: LFBGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32400E-5BL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 200MHz Access time: 5ns Case: LFBGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R32400E-5BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 200MHz Access time: 5ns Case: LFBGA144 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61DDB22M18C-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61QDB22M36A-333B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR81024B-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC Mounting: SMD Case: TWBGA78 Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...95°C Access time: 13.75ns Supply voltage: 1.5V DC Clock frequency: 933MHz Memory organisation: 1Gx8bit Memory: 8Gb DRAM Kind of memory: DDR3; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR81024BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA78 Access time: 13.75ns Supply voltage: 1.35V DC Clock frequency: 933MHz Memory organisation: 1Gx8bit Memory: 8Gb DRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
IS42S16160G-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3.3V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
IS42S16320D-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 512Mb DRAM Clock frequency: 143MHz Memory organisation: 8Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS42S32400F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP86 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 128Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx32bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160D-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
IS42S16320F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3.3V DC Memory: 512Mb DRAM Clock frequency: 143MHz Memory organisation: 32Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
IS42S16800F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 128Mb DRAM Clock frequency: 143MHz Memory organisation: 2Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS42S32200L-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP86 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3.3V DC Memory: 64Mb DRAM Clock frequency: 166MHz Memory organisation: 512kx32bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S32800J-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Case: TSOP86 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 256Mb DRAM Clock frequency: 143MHz Memory organisation: 8Mx32bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16320D-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 32Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16800E-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16160J-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16160J-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 256Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S81600F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx8bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
IS62WV2568BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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| IS62WV2568BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568BLL-55HLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 262kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45HLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: STSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS62WV2568EBLL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: TSOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS64WV2568EDBLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...125°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61WV2568EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61WV2568EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS64WV2568EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TSOP44 II Mounting: SMD Operating temperature: -40...125°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
IS62WVS2568FBLL-20NLI-TR | ISSI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
IS61WV2568EDBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| IS61LV2568L-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61LV2568L-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 3.3V Case: SOJ36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61WV2568EDBLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: SOJ36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS61WV2568EDBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.4...3.6V Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 10ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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IS62WVS2568FBLL-20NLI | ISSI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.2...3.6V Case: SO8 Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS61WV6416BLL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 3.3V Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IS61C6416AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 5V Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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IS61C3216AL-12KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 512kb SRAM Memory organisation: 32kx16bit Operating voltage: 5V Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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IS61LV12816L-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IS62WV12816BLL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 2.5...3.6V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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IS62WV6416BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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| IS43TR16256BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Supply voltage: 1.35V DC Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Memory: 4Gb DRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR16512BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96 Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Supply voltage: 1.35V DC Clock frequency: 933MHz Memory organisation: 512Mx16bit Memory: 8Gb DRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43TR85120BL-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78 Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Mounting: SMD Case: TWBGA78 Kind of interface: parallel Operating temperature: -40...95°C Access time: 13.75ns Supply voltage: 1.35V DC Clock frequency: 1.066GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42VM16200D-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Mounting: SMD Supply voltage: 1.7...1.95V DC Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 166MHz Kind of memory: SDRAM Kind of interface: parallel Access time: 6ns Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42VM16200D-75BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Mounting: SMD Supply voltage: 1.7...1.95V DC Case: TFBGA54 Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 133MHz Kind of memory: SDRAM Kind of interface: parallel Access time: 7.5ns Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42VM16200D-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54 Type of integrated circuit: DRAM memory Mounting: SMD Supply voltage: 1.7...1.95V DC Case: TFBGA54 Operating temperature: -40...85°C Kind of package: reel; tape Clock frequency: 133MHz Kind of memory: SDRAM Kind of interface: parallel Access time: 7.5ns Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43LR16200D-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Mounting: SMD Supply voltage: 1.7...1.95V DC Case: TFBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Clock frequency: 166MHz Kind of memory: LPDDR; SDRAM Kind of interface: parallel Access time: 6ns Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS64WV6416BLL-15TLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 15ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.5...3.6V Access time: 15ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IS43R16160F-5BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Case: TFBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Case: TFBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16320F-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16320F-5BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: reel; tape
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: reel; tape
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16320F-5BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IS43R32160D-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.6V DC
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144
Kind of package: in-tray; tube
Case: LFBGA144
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.6V DC
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IS43R32400E-5BL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS43R32400E-5BL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS43R32400E-5BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: LFBGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| IS61DDB22M18C-250M3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS61QDB22M36A-333B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR81024B-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Case: TWBGA78
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...95°C
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78; 1.5VDC
Mounting: SMD
Case: TWBGA78
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...95°C
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR81024BL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 1Gx8bit; 933MHz; 13.75ns; TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA78
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 933MHz
Memory organisation: 1Gx8bit
Memory: 8Gb DRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16160G-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
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В кошику
од. на суму грн.
| IS42S16320D-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx16bitx4
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В кошику
од. на суму грн.
| IS42S32400F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 143MHz; 7ns; TSOP86 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx32bit
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В кошику
од. на суму грн.
| IS43R16160D-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
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| IS42S16320F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 32Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 512Mb DRAM
Clock frequency: 143MHz
Memory organisation: 32Mx16bit
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| IS42S16800F-7TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
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| IS42S32200L-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx32bitx4
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| IS42S32800J-7TLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP86 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 8Mx32bit
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| IS43R16320D-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
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| IS43R16800E-6TLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bit
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| IS42S16160J-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
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| IS42S16160J-7TLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 256Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bitx4
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| IS42S81600F-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx8bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx8bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx8bitx4
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| IS62WV2568BLL-55HLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
на замовлення 166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 166.42 грн |
| 5+ | 148.90 грн |
| 25+ | 133.61 грн |
| IS62WV2568BLL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
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| IS62WV2568BLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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| IS62WV2568BLL-55BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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| IS62WV2568BLL-55HLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 262kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 262kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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| IS62WV2568EBLL-45BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45HLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45HLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: STSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
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| IS62WV2568EBLL-45TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 45ns
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| IS62WV2568EBLL-45TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; 45ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: TSOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 45ns
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| IS64WV2568EDBLL-10BLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
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| IS61WV2568EDBLL-10BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
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| IS61WV2568EDBLL-10BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 10ns
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| IS64WV2568EDBLL-10CTLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 10ns
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| IS62WVS2568FBLL-20NLI-TR |
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Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: reel; tape
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: reel; tape
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| IS61WV2568EDBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
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| IS61LV2568L-10KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61LV2568L-10KLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 3.3V
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 3.3V
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
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| IS61WV2568EDBLL-10KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: SOJ36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
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| IS61WV2568EDBLL-10TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.4...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 10ns
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| IS62WVS2568FBLL-20NLI |
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Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.2÷3.6V; SO8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.2...3.6V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
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| IS61WV6416BLL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3.3V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3.3V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.28 грн |
| IS61C6416AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 103 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 178.55 грн |
| IS61C3216AL-12KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 212.36 грн |
| IS61LV12816L-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 455.92 грн |
| 5+ | 393.57 грн |
| IS62WV12816BLL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.5÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.5...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.68 грн |
| 5+ | 124.75 грн |
| 25+ | 121.53 грн |
| IS62WV6416BLL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 209.76 грн |
| 5+ | 181.09 грн |
| 25+ | 167.41 грн |
| IS43TR16256BL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Memory: 4Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Memory: 4Gb DRAM
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| IS43TR16512BL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 933MHz
Memory organisation: 512Mx16bit
Memory: 8Gb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 933MHz
Memory organisation: 512Mx16bit
Memory: 8Gb DRAM
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| IS43TR85120BL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Mounting: SMD
Case: TWBGA78
Kind of interface: parallel
Operating temperature: -40...95°C
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 1.066GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1066MHz; 13.75ns; TWBGA78
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Mounting: SMD
Case: TWBGA78
Kind of interface: parallel
Operating temperature: -40...95°C
Access time: 13.75ns
Supply voltage: 1.35V DC
Clock frequency: 1.066GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
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| IS42VM16200D-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Access time: 6ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Access time: 6ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
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| IS42VM16200D-75BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 133MHz
Kind of memory: SDRAM
Kind of interface: parallel
Access time: 7.5ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 133MHz
Kind of memory: SDRAM
Kind of interface: parallel
Access time: 7.5ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
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| IS42VM16200D-75BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Clock frequency: 133MHz
Kind of memory: SDRAM
Kind of interface: parallel
Access time: 7.5ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 133MHz; 7.5ns; TFBGA54
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA54
Operating temperature: -40...85°C
Kind of package: reel; tape
Clock frequency: 133MHz
Kind of memory: SDRAM
Kind of interface: parallel
Access time: 7.5ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
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| IS43LR16200D-6BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 166MHz
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Access time: 6ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.7...1.95V DC
Case: TFBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Clock frequency: 166MHz
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Access time: 6ns
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
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| IS64WV6416BLL-15TLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 15ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Access time: 15ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 15ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Access time: 15ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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В кошику
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