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IXTQ96N15P IXTQ96N15P IXYS 99131.pdf Description: MOSFET N-CH 150V 96A TO3P
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
IXTQ96N20P IXTQ96N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 96A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXTR200N10P IXTR200N10P IXYS 99365.pdf Description: MOSFET N-CH 100V 120A ISOPLUS247
товар відсутній
IXTT100N25P IXTT100N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 100A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTT10N100D IXTT10N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTT10P50 IXTT10P50 IXYS IXTH10P50.pdf Description: MOSFET P-CH 500V 10A TO-268
товар відсутній
IXTT10P60 IXTT10P60 IXYS littelfuse_discrete_mosfets_p-channel_ixt_10p60_datasheet.pdf.pdf Description: MOSFET P-CH 600V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
товар відсутній
IXTT110N10P IXTT110N10P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_110n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
товар відсутній
IXTT11P50 IXTT11P50 IXYS IXTx11P50_Rev2005.pdf Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
товар відсутній
IXTT120N15P IXTT120N15P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_120n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 120A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
товар відсутній
IXTT140N10P IXTT140N10P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_140n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+695.26 грн
IXTT16P20 IXTT16P20 IXYS Description: MOSFET P-CH 200V 16A TO-268
товар відсутній
IXTT170N10P IXTT170N10P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_170n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 170A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
IXTT1N100 IXTT1N100 IXYS 98886.pdf Description: MOSFET N-CH 1000V 1.5A TO-268
товар відсутній
IXTT20N50D IXTT20N50D IXYS 99192.pdf Description: MOSFET N-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTT24P20 IXTT24P20 IXYS littelfuse_discrete_mosfets_p-channel_ixt_24p20_datasheet.pdf.pdf Description: MOSFET P-CH 200V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
на замовлення 741 шт:
термін постачання 21-31 дні (днів)
1+748.58 грн
30+ 583.39 грн
120+ 549.07 грн
510+ 466.98 грн
IXTT26N50P IXTT26N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+619.2 грн
10+ 510.83 грн
IXTT36P10 IXTT36P10 IXYS Description: MOSFET P-CH 100V 36A TO-268
товар відсутній
IXTT50P085 IXTT50P085 IXYS Description: MOSFET P-CH 85V 50A TO-268
товар відсутній
IXTT50P10 IXTT50P10 IXYS DS98905E(IXTH-T50P10).pdf Description: MOSFET P-CH 100V 50A TO-268
товар відсутній
IXTT52N30P IXTT52N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
товар відсутній
IXTT64N25P IXTT64N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
IXTT69N30P IXTT69N30P IXYS 99078.pdf Description: MOSFET N-CH 300V 69A TO-268
товар відсутній
IXTT6N120 IXTT6N120 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO268
Packaging: Box
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
1+858.06 грн
10+ 759.47 грн
100+ 641.42 грн
IXTT74N20P IXTT74N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 74A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товар відсутній
IXTT82N25P IXTT82N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 82A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
1+713.75 грн
10+ 589.56 грн
100+ 491.34 грн
IXTT88N15 IXTT88N15 IXYS 99034.pdf Description: MOSFET N-CH 150V 88A TO-268
товар відсутній
IXTT88N30P IXTT88N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTT8P50 IXTT8P50 IXYS 94534.pdf Description: MOSFET P-CH 500V 8A TO-268
товар відсутній
IXTT96N15P IXTT96N15P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
1+525.36 грн
30+ 404.04 грн
120+ 361.5 грн
IXTT96N20P IXTT96N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXTU01N100D IXTU01N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 400MA TO251
товар відсутній
IXTU01N80 IXTU01N80 IXYS 98841.pdf Description: MOSFET N-CH 800V 100MA TO251
товар відсутній
IXTU02N50D IXTU02N50D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf Description: MOSFET N-CH 500V 200MA TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 378 шт:
термін постачання 21-31 дні (днів)
3+125.12 грн
70+ 96.89 грн
140+ 79.72 грн
Мінімальне замовлення: 3
IXTU05N120 IXTU05N120 IXYS Description: MOSFET N-CH 1200V 0.5A TO-251
товар відсутній
IXTU06N120P IXTU06N120P IXYS Description: MOSFET N-CH 1200V 600MA TO251
товар відсутній
IXTU1R4N60P IXTU1R4N60P IXYS IXT(P,U,Y)%201R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO251
товар відсутній
IXTU44N10T IXTU44N10T IXYS Description: MOSFET N-CH 100V 44A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
товар відсутній
IXTU50N085T IXTU50N085T IXYS Description: MOSFET N-CH 85V 50A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drain to Source Voltage (Vdss): 85 V
товар відсутній
IXTU55N075T IXTU55N075T IXYS Description: MOSFET N-CH 75V 55A TO-251
товар відсутній
IXTU5N50P IXTU5N50P IXYS DS99446G(IXTU-TY-TA-TP5N50P).pdf Description: MOSFET N-CH 500V 4.8A TO252
товар відсутній
IXTU64N055T IXTU64N055T IXYS Description: MOSFET N-CH 55V 64A TO-251
товар відсутній
IXTV200N10T IXTV200N10T IXYS DS99714A(IXTV200N10T-S).pdf Description: MOSFET N-CH 100V 200A PLUS220
товар відсутній
IXTV200N10TS IXTV200N10TS IXYS DS99714A(IXTV200N10T-S).pdf Description: MOSFET N-CH 100V 200A PLUS220SMD
товар відсутній
IXTV230N085T IXTV230N085T IXYS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf Description: MOSFET N-CH 85V 230A PLUS220
товар відсутній
IXTV230N085TS IXTV230N085TS IXYS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf Description: MOSFET N-CH 85V 230A PLUS-220SMD
товар відсутній
IXTV250N075T IXTV250N075T IXYS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf Description: MOSFET N-CH 75V 250A PLUS220
товар відсутній
IXTV250N075TS IXTV250N075TS IXYS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf Description: MOSFET N-CH 75V 250A PLUS-220SMD
товар відсутній
IXTV280N055T IXTV280N055T IXYS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf Description: MOSFET N-CH 55V 280A PLUS220
товар відсутній
IXTV280N055TS IXTV280N055TS IXYS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf Description: MOSFET N-CH 55V 280A PLUS-220SMD
товар відсутній
IXTX22N100L IXTX22N100L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_22n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 22A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+2987.93 грн
10+ 2684.9 грн
100+ 2331.22 грн
IXTX24N100 IXTX24N100 IXYS Description: MOSFET N-CH 1000V 24A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXTX46N50L IXTX46N50L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtk46n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 46A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 663 шт:
термін постачання 21-31 дні (днів)
1+2949.54 грн
30+ 2379.85 грн
120+ 2221.18 грн
IXTY01N100D IXTY01N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
2+251.66 грн
70+ 191.63 грн
140+ 164.26 грн
560+ 137.02 грн
1050+ 117.33 грн
2030+ 110.47 грн
5040+ 104.25 грн
Мінімальне замовлення: 2
IXTY01N80 IXTY01N80 IXYS 98841.pdf Description: MOSFET N-CH 800V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
IXTY02N50D IXTY02N50D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf Description: MOSFET N-CH 500V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 3038 шт:
термін постачання 21-31 дні (днів)
2+155.69 грн
70+ 120.42 грн
140+ 99.08 грн
560+ 78.68 грн
1050+ 66.76 грн
2030+ 63.42 грн
Мінімальне замовлення: 2
IXTY1N80 IXTY1N80 IXYS 98822.pdf Description: MOSFET N-CH 800V 750MA TO-252AA
товар відсутній
IXTY2N80P IXTY2N80P IXYS DS99595F(IXTU-TY-TA-TP2N80P).pdf Description: MOSFET N-CH 800V 2A TO252
товар відсутній
IXTY44N10T IXTY44N10T IXYS 05fe2718-4630-40c2-8e32-af8fb67897da.pdf Description: MOSFET N-CH 100V 44A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)
2+183.41 грн
10+ 158.82 грн
100+ 127.65 грн
500+ 98.42 грн
1000+ 81.55 грн
2000+ 75.92 грн
Мінімальне замовлення: 2
IXTY50N085T IXTY50N085T IXYS 460f7899-e172-4f13-9863-adac246f799b.pdf Description: MOSFET N-CH 85V 50A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
товар відсутній
IXTQ96N15P 99131.pdf
IXTQ96N15P
Виробник: IXYS
Description: MOSFET N-CH 150V 96A TO3P
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
IXTQ96N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf
IXTQ96N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 96A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXTR200N10P 99365.pdf
IXTR200N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 120A ISOPLUS247
товар відсутній
IXTT100N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf
IXTT100N25P
Виробник: IXYS
Description: MOSFET N-CH 250V 100A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTT10N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf
IXTT10N100D
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTT10P50 IXTH10P50.pdf
IXTT10P50
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO-268
товар відсутній
IXTT10P60 littelfuse_discrete_mosfets_p-channel_ixt_10p60_datasheet.pdf.pdf
IXTT10P60
Виробник: IXYS
Description: MOSFET P-CH 600V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
товар відсутній
IXTT110N10P littelfuse_discrete_mosfets_n-channel_standard_ixt_110n10p_datasheet.pdf.pdf
IXTT110N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
товар відсутній
IXTT11P50 IXTx11P50_Rev2005.pdf
IXTT11P50
Виробник: IXYS
Description: MOSFET P-CH 500V 11A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
товар відсутній
IXTT120N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_120n15p_datasheet.pdf.pdf
IXTT120N15P
Виробник: IXYS
Description: MOSFET N-CH 150V 120A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
товар відсутній
IXTT140N10P littelfuse_discrete_mosfets_n-channel_standard_ixt_140n10p_datasheet.pdf.pdf
IXTT140N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+695.26 грн
IXTT16P20
IXTT16P20
Виробник: IXYS
Description: MOSFET P-CH 200V 16A TO-268
товар відсутній
IXTT170N10P littelfuse_discrete_mosfets_n-channel_standard_ixt_170n10p_datasheet.pdf.pdf
IXTT170N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 170A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
IXTT1N100 98886.pdf
IXTT1N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.5A TO-268
товар відсутній
IXTT20N50D 99192.pdf
IXTT20N50D
Виробник: IXYS
Description: MOSFET N-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTT24P20 littelfuse_discrete_mosfets_p-channel_ixt_24p20_datasheet.pdf.pdf
IXTT24P20
Виробник: IXYS
Description: MOSFET P-CH 200V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
на замовлення 741 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+748.58 грн
30+ 583.39 грн
120+ 549.07 грн
510+ 466.98 грн
IXTT26N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_26n50p_datasheet.pdf.pdf
IXTT26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+619.2 грн
10+ 510.83 грн
IXTT36P10
IXTT36P10
Виробник: IXYS
Description: MOSFET P-CH 100V 36A TO-268
товар відсутній
IXTT50P085
IXTT50P085
Виробник: IXYS
Description: MOSFET P-CH 85V 50A TO-268
товар відсутній
IXTT50P10 DS98905E(IXTH-T50P10).pdf
IXTT50P10
Виробник: IXYS
Description: MOSFET P-CH 100V 50A TO-268
товар відсутній
IXTT52N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf
IXTT52N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
товар відсутній
IXTT64N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf
IXTT64N25P
Виробник: IXYS
Description: MOSFET N-CH 250V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
IXTT69N30P 99078.pdf
IXTT69N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 69A TO-268
товар відсутній
IXTT6N120 littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf
IXTT6N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO268
Packaging: Box
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+858.06 грн
10+ 759.47 грн
100+ 641.42 грн
IXTT74N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf
IXTT74N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 74A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товар відсутній
IXTT82N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf
IXTT82N25P
Виробник: IXYS
Description: MOSFET N-CH 250V 82A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+713.75 грн
10+ 589.56 грн
100+ 491.34 грн
IXTT88N15 99034.pdf
IXTT88N15
Виробник: IXYS
Description: MOSFET N-CH 150V 88A TO-268
товар відсутній
IXTT88N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf
IXTT88N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTT8P50 94534.pdf
IXTT8P50
Виробник: IXYS
Description: MOSFET P-CH 500V 8A TO-268
товар відсутній
IXTT96N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf
IXTT96N15P
Виробник: IXYS
Description: MOSFET N-CH 150V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+525.36 грн
30+ 404.04 грн
120+ 361.5 грн
IXTT96N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf
IXTT96N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXTU01N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf
IXTU01N100D
Виробник: IXYS
Description: MOSFET N-CH 1000V 400MA TO251
товар відсутній
IXTU01N80 98841.pdf
IXTU01N80
Виробник: IXYS
Description: MOSFET N-CH 800V 100MA TO251
товар відсутній
IXTU02N50D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf
IXTU02N50D
Виробник: IXYS
Description: MOSFET N-CH 500V 200MA TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+125.12 грн
70+ 96.89 грн
140+ 79.72 грн
Мінімальне замовлення: 3
IXTU05N120
IXTU05N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 0.5A TO-251
товар відсутній
IXTU06N120P
IXTU06N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 600MA TO251
товар відсутній
IXTU1R4N60P IXT(P,U,Y)%201R4N60P.pdf
IXTU1R4N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A TO251
товар відсутній
IXTU44N10T
IXTU44N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 44A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
товар відсутній
IXTU50N085T
IXTU50N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 50A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drain to Source Voltage (Vdss): 85 V
товар відсутній
IXTU55N075T
IXTU55N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 55A TO-251
товар відсутній
IXTU5N50P DS99446G(IXTU-TY-TA-TP5N50P).pdf
IXTU5N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 4.8A TO252
товар відсутній
IXTU64N055T
IXTU64N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 64A TO-251
товар відсутній
IXTV200N10T DS99714A(IXTV200N10T-S).pdf
IXTV200N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 200A PLUS220
товар відсутній
IXTV200N10TS DS99714A(IXTV200N10T-S).pdf
IXTV200N10TS
Виробник: IXYS
Description: MOSFET N-CH 100V 200A PLUS220SMD
товар відсутній
IXTV230N085T b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf
IXTV230N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 230A PLUS220
товар відсутній
IXTV230N085TS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf
IXTV230N085TS
Виробник: IXYS
Description: MOSFET N-CH 85V 230A PLUS-220SMD
товар відсутній
IXTV250N075T c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf
IXTV250N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 250A PLUS220
товар відсутній
IXTV250N075TS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf
IXTV250N075TS
Виробник: IXYS
Description: MOSFET N-CH 75V 250A PLUS-220SMD
товар відсутній
IXTV280N055T 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf
IXTV280N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 280A PLUS220
товар відсутній
IXTV280N055TS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf
IXTV280N055TS
Виробник: IXYS
Description: MOSFET N-CH 55V 280A PLUS-220SMD
товар відсутній
IXTX22N100L littelfuse_discrete_mosfets_n-channel_linear_ixt_22n100l_datasheet.pdf.pdf
IXTX22N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 22A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2987.93 грн
10+ 2684.9 грн
100+ 2331.22 грн
IXTX24N100
IXTX24N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 24A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXTX46N50L littelfuse_discrete_mosfets_n-channel_linear_ixtk46n50l_datasheet.pdf.pdf
IXTX46N50L
Виробник: IXYS
Description: MOSFET N-CH 500V 46A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 663 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2949.54 грн
30+ 2379.85 грн
120+ 2221.18 грн
IXTY01N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf
IXTY01N100D
Виробник: IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+251.66 грн
70+ 191.63 грн
140+ 164.26 грн
560+ 137.02 грн
1050+ 117.33 грн
2030+ 110.47 грн
5040+ 104.25 грн
Мінімальне замовлення: 2
IXTY01N80 98841.pdf
IXTY01N80
Виробник: IXYS
Description: MOSFET N-CH 800V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
IXTY02N50D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf
IXTY02N50D
Виробник: IXYS
Description: MOSFET N-CH 500V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 3038 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+155.69 грн
70+ 120.42 грн
140+ 99.08 грн
560+ 78.68 грн
1050+ 66.76 грн
2030+ 63.42 грн
Мінімальне замовлення: 2
IXTY1N80 98822.pdf
IXTY1N80
Виробник: IXYS
Description: MOSFET N-CH 800V 750MA TO-252AA
товар відсутній
IXTY2N80P DS99595F(IXTU-TY-TA-TP2N80P).pdf
IXTY2N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 2A TO252
товар відсутній
IXTY44N10T 05fe2718-4630-40c2-8e32-af8fb67897da.pdf
IXTY44N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 44A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 22A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 25 V
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+183.41 грн
10+ 158.82 грн
100+ 127.65 грн
500+ 98.42 грн
1000+ 81.55 грн
2000+ 75.92 грн
Мінімальне замовлення: 2
IXTY50N085T 460f7899-e172-4f13-9863-adac246f799b.pdf
IXTY50N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 50A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
товар відсутній
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