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IXTJ6N150 IXYS DS100448A(IXTJ6N150).pdf Description: MOSFET N-CH 1500V 3A ISOTO-247
товару немає в наявності
 Мінімальне замовлення: 60 шт
В кошику  од. на суму  грн.
IXTK20N150 IXTK20N150 IXYS 238_DS100424BIXTKTX20N150.pdf Description: MOSFET N-CH 1500V 20A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTN120P20T IXTN120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixtn120p20t_datasheet.pdf.pdf Description: MOSFET P-CH 200V 106A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+3741.25 грн
В кошику  од. на суму  грн.
IXTP02N120P IXTP02N120P IXYS littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0 Description: MOSFET N-CH 1200V 200MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 33W (Tc)
на замовлення 2939 шт:
термін постачання 21-31 дні (днів)
2+230.92 грн
50+111.71 грн
100+101.00 грн
500+77.18 грн
1000+71.53 грн
2000+67.08 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP05N100P IXTP05N100P IXYS littelfuse-discrete-mosfets-ixt-05n100p-datasheet?assetguid=96c672c8-2a09-4a39-a0da-772c2b944807 Description: MOSFET N-CH 1000V 500MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXTP10P15T IXTP10P15T IXYS DS100290(IXTA-TP-TY10P15T).pdf Description: MOSFET P-CH 150V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1556 шт:
термін постачання 21-31 дні (днів)
2+257.27 грн
50+195.85 грн
100+167.87 грн
500+140.04 грн
1000+119.91 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP1N80P IXTP1N80P IXYS DS100112(IXTA-TP-TU-TY1N80P).pdf Description: MOSFET N-CH 800V 1A TO-220
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP460P2 IXTP460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP48P05T IXTP48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
1+327.01 грн
50+172.57 грн
100+157.24 грн
500+126.12 грн
1000+115.16 грн
В кошику  од. на суму  грн.
IXTP60N20T IXTP60N20T IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
1+495.94 грн
50+256.04 грн
100+234.63 грн
В кошику  од. на суму  грн.
IXTR120P20T IXTR120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixtr120p20t_datasheet.pdf.pdf Description: MOSFET P-CH 200V 90A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTR140P10T IXTR140P10T IXYS littelfuse_discrete_mosfets_p-channel_ixtr140p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 110A ISOPLUS247
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 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTR210P10T IXTR210P10T IXYS littelfuse_discrete_mosfets_p-channel_ixtr210p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 195A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
300+1727.91 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTT110N10L2 IXTT110N10L2 IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT440N055T2 IXTT440N055T2 IXYS littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25 Description: MOSFET N-CH 55V 440A TO268
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1000W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTT500N04T2 IXTT500N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 500A TO268
товару немає в наявності
 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTX210P10T IXTX210P10T IXYS DS100397AIXTKTX210P10T.pdf Description: MOSFET P-CH 100V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 795 шт:
термін постачання 21-31 дні (днів)
1+2478.93 грн
30+1572.56 грн
120+1451.67 грн
В кошику  од. на суму  грн.
IXTY10P15T IXTY10P15T IXYS DS100290(IXTA-TP-TY10P15T).pdf Description: MOSFET P-CH 150V 10A TO-252
товару немає в наявності
 Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
IXTY26P10T IXTY26P10T IXYS littelfuse_discrete_mosfets_p-channel_ixt_26p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 26A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IXTY32P05T IXTY32P05T IXYS DS99967C(IXTY-TA-TP32P05T).pdf Description: MOSFET P-CH 50V 32A TO-252
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 Мінімальне замовлення: 70 шт
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS DS100334BIXXH30N60B3D1.pdf Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
1+560.26 грн
30+313.01 грн
120+263.29 грн
510+212.90 грн
В кошику  од. на суму  грн.
IXXH50N60B3 IXXH50N60B3 IXYS littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170 Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
1+1018.23 грн
30+597.74 грн
120+513.85 грн
510+444.03 грн
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS DS100302BIXXH50N60B3D1.pdf Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS DS100328BIXXH75N60B3D1.pdf Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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IXXH75N60C3 IXXH75N60C3 IXYS littelfuse-discrete-igbts-ixxh75n60c3-datasheet?assetguid=18b30bab-ce67-4b38-a8fd-bd1143f61ab4 Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXXK200N60B3 IXXK200N60B3 IXYS DS100372AIXXKX200N60B3.pdf Description: IGBT PT 600V 380A TO-264
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 380 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 48ns/160ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXK200N60C3 IXXK200N60C3 IXYS Description: IGBT PT 600V 340A TO-264
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 47ns/125ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXR100N60B3H1 IXXR100N60B3H1 IXYS media?resourcetype=datasheets&itemid=613f1ae9-0731-4a6d-b1c2-52f5f0c7f673&filename=littelfuse_discrete_igbts_xpt_ixxr100n60b3h1_datasheet.pdf Description: IGBT 600V 145A 400W ISOPLUS247
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
300+1178.74 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXX100N60C3H1 IXXX100N60C3H1 IXYS media?resourcetype=datasheets&itemid=9922f041-1111-4aea-bb33-e69a6770637d&filename=littelfuse_discrete_igbts_xpt_ixx_100n60c3h1_datasheet.pdf Description: IGBT 600V 170A 695W PLUS247
Power - Max: 695 W
Current - Collector Pulsed (Icm): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 170 A
Gate Charge: 150 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 2mJ (on), 950µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH24N90C3 IXYH24N90C3 IXYS littelfuse-discrete-igbts-ixbf9n160g-datasheet?assetguid=6360b46e-5017-4b38-bbef-9a125968ea41 Description: IGBT 900V 46A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 240 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH30N120C3 IXYH30N120C3 IXYS littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d Description: IGBT 1200V 75A TO-247
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C: 19ns/130ns
Supplier Device Package: TO-247 (IXYH)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 500 W
Current - Collector Pulsed (Icm): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 69 nC
Test Condition: 600V, 30A, 10Ohm, 15V
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
1+559.48 грн
30+314.00 грн
120+264.62 грн
510+219.80 грн
В кошику  од. на суму  грн.
IXYH30N120C3D1 IXYH30N120C3D1 IXYS media-3320177.pdf Description: IGBT 1200V 66A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 133 A
Power - Max: 416 W
на замовлення 1363 шт:
термін постачання 21-31 дні (днів)
1+743.91 грн
30+427.73 грн
120+364.39 грн
510+319.75 грн
В кошику  од. на суму  грн.
IXYH40N120C3 IXYH40N120C3 IXYS DS100416BIXYH40N120C3.pdf Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
1+876.42 грн
30+507.57 грн
120+433.88 грн
В кошику  од. на суму  грн.
IXYH40N120C3D1 IXYH40N120C3D1 IXYS littelfuse-discrete-igbts-ixyh40n120c3d1-datasheet?assetguid=0a9184c9-b984-421b-b5a1-4ac88a5bd1cd Description: IGBT 1200V 64A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+1040.70 грн
30+612.09 грн
120+526.60 грн
510+456.75 грн
В кошику  од. на суму  грн.
IXYK100N120C3 IXYK100N120C3 IXYS DS100404AIXYKX100N120C3.pdf Description: IGBT 1200V 188A TO-264
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 490 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 188 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+2000.81 грн
25+1278.07 грн
100+1212.48 грн
В кошику  од. на суму  грн.
IXYN100N120C3 IXYN100N120C3 IXYS littelfuse_discrete_igbts_xpt_ixyn100n120c3_datasheet.pdf.pdf Description: IGBT MOD 1200V 152A 830W SOT227B
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Current - Collector Cutoff (Max): 25 µA
Power - Max: 830 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 152 A
Part Status: Active
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+3548.30 грн
В кошику  од. на суму  грн.
IXYN100N120C3H1 IXYN100N120C3H1 IXYS littelfusediscreteigbtsxptixyn100n120c3h1data.pdf Description: IGBT MODULE 1200V 134A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 1063 шт:
термін постачання 21-31 дні (днів)
1+3088.01 грн
10+2230.64 грн
100+1940.06 грн
В кошику  од. на суму  грн.
IXYN82N120C3 IXYN82N120C3 IXYS Description: IGBT MOD 1200V 105A 500W SOT227B
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 105 A
Part Status: Active
Supplier Device Package: SOT-227B
NTC Thermistor: No
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
Current - Collector Cutoff (Max): 25 µA
Power - Max: 500 W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+2167.42 грн
10+1536.22 грн
100+1334.05 грн
В кошику  од. на суму  грн.
IXYP30N120C3 IXYP30N120C3 IXYS littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d Description: IGBT 1200V 75A TO-220-3
Packaging: Tube
Power - Max: 500 W
Current - Collector Pulsed (Icm): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 69 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C: 19ns/130ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYP8N90C3 IXYP8N90C3 IXYS media?resourcetype=datasheets&itemid=11D4BD5C-8AE2-405E-8BEC-58F631EF5FBE&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3-Datasheet.PDF Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYP8N90C3D1 IXYP8N90C3D1 IXYS littelfuse-discrete-igbts-ixgh42n30c3-datasheet?assetguid=cfdebaeb-c0d6-454a-8b5e-9c212af484cf Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYR100N120C3 IXYR100N120C3 IXYS littelfuse_discrete_igbts_xpt_ixyr100n120c3_datasheet.pdf.pdf Description: IGBT 1200V 104A 484W ISOPLUS247
Power - Max: 484 W
Current - Collector Pulsed (Icm): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 104 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2207.71 грн
В кошику  од. на суму  грн.
IXYX100N120C3 IXYX100N120C3 IXYS DS100404AIXYKX100N120C3.pdf Description: IGBT 1200V 188A PLUS247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 490 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 188 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+2013.99 грн
30+1263.23 грн
120+1222.07 грн
В кошику  од. на суму  грн.
MMIX1T550N055T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+3477.79 грн
В кошику  од. на суму  грн.
DSEI8-06AS-TRL DSEI8-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674 Description: DIODE STANDARD 600V 8A TO263AA
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
DSEP40-03AS-TRL DSEP40-03AS-TRL IXYS media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet Description: DIODE STANDARD 300V 40A TO263AA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 3628 шт:
термін постачання 21-31 дні (днів)
2+306.86 грн
10+215.73 грн
100+174.03 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP6-06AS-TRL DSEP6-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEP6-06AS-Datasheet?assetguid=c72fe95f-12c6-409b-b46f-4a51a0e564e7 Description: DIODE STANDARD 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
на замовлення 5503 шт:
термін постачання 21-31 дні (днів)
2+216.20 грн
10+134.99 грн
100+93.31 грн
500+70.85 грн
1000+67.70 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP6-06BS-TRL DSEP6-06BS-TRL IXYS DSEP6-06BS.pdf Description: DIODE GEN PURP 600V 6A TO252AA
товару немає в наявності
В кошику  од. на суму  грн.
DSI30-08AS-TRL DSI30-08AS-TRL IXYS media?resourcetype=datasheets&itemid=517a38f0-6de7-4d1e-9262-04a5da9f220b&filename=Littelfuse-Power-Semiconductors-DSI30-08AS-Datasheet Description: DIODE GEN PURP 800V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
2+254.94 грн
10+205.65 грн
100+166.40 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSI30-16AS-TRL DSI30-16AS-TRL IXYS Littelfuse-Power-Semiconductors-DSI30-16AS-Datasheet?assetguid=728e0950-55e7-4c06-8e1a-890a9b55042f Description: DIODE STANDARD 1600V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
DSP8-08AS-TRL DSP8-08AS-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 6143 шт:
термін постачання 21-31 дні (днів)
1+390.55 грн
10+250.80 грн
100+179.74 грн
В кошику  од. на суму  грн.
DSSK28-006BS-TUB DSSK28-006BS-TUB IXYS Description: DIODE ARR SCHOTT 60V 15A TO263AA
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
MMIX1F520N075T2 MMIX1F520N075T2 IXYS MMIX1F520N075T2.pdf Description: MOSFET N-CH 75V 500A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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MMIX1F44N100Q3 MMIX1F44N100Q3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 30A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
MMIX1X100N60B3H1 MMIX1X100N60B3H1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x100n60b3h1_datasheet.pdf.pdf Description: IGBT 600V 145A 400W SMPD
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
Supplier Device Package: 24-SMPD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MMIX1X200N60B3H1 MMIX1X200N60B3H1 IXYS littelfuse-discrete-igbts-mmix1x200n60b3h1-datasheet?assetguid=594a0034-e667-4341-8d0f-6cce662088ba Description: IGBT 600V 175A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+3064.76 грн
20+2071.88 грн
100+2065.93 грн
В кошику  од. на суму  грн.
IXYH40N120B3 IXYH40N120B3 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120b3_datasheet.pdf.pdf Description: IGBT 1200V 96A 577W TO247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Gate Charge: 87 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 22ns/177ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 577 W
Current - Collector Pulsed (Icm): 200 A
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH40N120B3D1 IXYH40N120B3D1 IXYS DS100413BIXYH40N120B3D1.pdf Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
1+1004.28 грн
30+589.03 грн
120+506.13 грн
510+436.34 грн
В кошику  од. на суму  грн.
IXYK120N120C3 IXYK120N120C3 IXYS DS100451BIXYKX120N120C3.pdf Description: IGBT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
1+2462.66 грн
25+1594.41 грн
100+1467.54 грн
В кошику  од. на суму  грн.
IXYR50N120C3D1 IXYR50N120C3D1 IXYS DS100492BIXYR50N120C3D1.pdf Description: IGBT 1200V 56A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTJ6N150 DS100448A(IXTJ6N150).pdf
Виробник: IXYS
Description: MOSFET N-CH 1500V 3A ISOTO-247
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику  од. на суму  грн.
IXTK20N150 238_DS100424BIXTKTX20N150.pdf
IXTK20N150
Виробник: IXYS
Description: MOSFET N-CH 1500V 20A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTN120P20T littelfuse_discrete_mosfets_p-channel_ixtn120p20t_datasheet.pdf.pdf
IXTN120P20T
Виробник: IXYS
Description: MOSFET P-CH 200V 106A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3741.25 грн
В кошику  од. на суму  грн.
IXTP02N120P littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0
IXTP02N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 200MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 33W (Tc)
на замовлення 2939 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+230.92 грн
50+111.71 грн
100+101.00 грн
500+77.18 грн
1000+71.53 грн
2000+67.08 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP05N100P littelfuse-discrete-mosfets-ixt-05n100p-datasheet?assetguid=96c672c8-2a09-4a39-a0da-772c2b944807
IXTP05N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 500MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXTP10P15T DS100290(IXTA-TP-TY10P15T).pdf
IXTP10P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1556 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+257.27 грн
50+195.85 грн
100+167.87 грн
500+140.04 грн
1000+119.91 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP1N80P DS100112(IXTA-TP-TU-TY1N80P).pdf
IXTP1N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 1A TO-220
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTP460P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTP48P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 48A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+327.01 грн
50+172.57 грн
100+157.24 грн
500+126.12 грн
1000+115.16 грн
В кошику  од. на суму  грн.
IXTP60N20T littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTP60N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+495.94 грн
50+256.04 грн
100+234.63 грн
В кошику  од. на суму  грн.
IXTR120P20T littelfuse_discrete_mosfets_p-channel_ixtr120p20t_datasheet.pdf.pdf
IXTR120P20T
Виробник: IXYS
Description: MOSFET P-CH 200V 90A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTR140P10T littelfuse_discrete_mosfets_p-channel_ixtr140p10t_datasheet.pdf.pdf
IXTR140P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 110A ISOPLUS247
товару немає в наявності
Мінімальне замовлення: 30 шт
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IXTR210P10T littelfuse_discrete_mosfets_p-channel_ixtr210p10t_datasheet.pdf.pdf
IXTR210P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+1727.91 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTT110N10L2 PdfFile135152.pdf
IXTT110N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT440N055T2 littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25
IXTT440N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 440A TO268
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1000W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTT500N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf
IXTT500N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 500A TO268
товару немає в наявності
Мінімальне замовлення: 30 шт
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IXTX210P10T DS100397AIXTKTX210P10T.pdf
IXTX210P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
на замовлення 795 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2478.93 грн
30+1572.56 грн
120+1451.67 грн
В кошику  од. на суму  грн.
IXTY10P15T DS100290(IXTA-TP-TY10P15T).pdf
IXTY10P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO-252
товару немає в наявності
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
IXTY26P10T littelfuse_discrete_mosfets_p-channel_ixt_26p10t_datasheet.pdf.pdf
IXTY26P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IXTY32P05T DS99967C(IXTY-TA-TP32P05T).pdf
IXTY32P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 32A TO-252
товару немає в наявності
Мінімальне замовлення: 70 шт
В кошику  од. на суму  грн.
IXXH30N60B3D1 DS100334BIXXH30N60B3D1.pdf
IXXH30N60B3D1
Виробник: IXYS
Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+560.26 грн
30+313.01 грн
120+263.29 грн
510+212.90 грн
В кошику  од. на суму  грн.
IXXH50N60B3 littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170
IXXH50N60B3
Виробник: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1018.23 грн
30+597.74 грн
120+513.85 грн
510+444.03 грн
В кошику  од. на суму  грн.
IXXH50N60B3D1 DS100302BIXXH50N60B3D1.pdf
IXXH50N60B3D1
Виробник: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH75N60B3D1 DS100328BIXXH75N60B3D1.pdf
IXXH75N60B3D1
Виробник: IXYS
Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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IXXH75N60C3 littelfuse-discrete-igbts-ixxh75n60c3-datasheet?assetguid=18b30bab-ce67-4b38-a8fd-bd1143f61ab4
IXXH75N60C3
Виробник: IXYS
Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXK200N60B3 DS100372AIXXKX200N60B3.pdf
IXXK200N60B3
Виробник: IXYS
Description: IGBT PT 600V 380A TO-264
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 380 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 48ns/160ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXK200N60C3
IXXK200N60C3
Виробник: IXYS
Description: IGBT PT 600V 340A TO-264
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 47ns/125ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXR100N60B3H1 media?resourcetype=datasheets&itemid=613f1ae9-0731-4a6d-b1c2-52f5f0c7f673&filename=littelfuse_discrete_igbts_xpt_ixxr100n60b3h1_datasheet.pdf
IXXR100N60B3H1
Виробник: IXYS
Description: IGBT 600V 145A 400W ISOPLUS247
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+1178.74 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXX100N60C3H1 media?resourcetype=datasheets&itemid=9922f041-1111-4aea-bb33-e69a6770637d&filename=littelfuse_discrete_igbts_xpt_ixx_100n60c3h1_datasheet.pdf
IXXX100N60C3H1
Виробник: IXYS
Description: IGBT 600V 170A 695W PLUS247
Power - Max: 695 W
Current - Collector Pulsed (Icm): 340 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 170 A
Gate Charge: 150 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 2mJ (on), 950µJ (off)
Td (on/off) @ 25°C: 30ns/90ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH24N90C3 littelfuse-discrete-igbts-ixbf9n160g-datasheet?assetguid=6360b46e-5017-4b38-bbef-9a125968ea41
IXYH24N90C3
Виробник: IXYS
Description: IGBT 900V 46A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 240 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH30N120C3 littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d
IXYH30N120C3
Виробник: IXYS
Description: IGBT 1200V 75A TO-247
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C: 19ns/130ns
Supplier Device Package: TO-247 (IXYH)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 500 W
Current - Collector Pulsed (Icm): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 69 nC
Test Condition: 600V, 30A, 10Ohm, 15V
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+559.48 грн
30+314.00 грн
120+264.62 грн
510+219.80 грн
В кошику  од. на суму  грн.
IXYH30N120C3D1 media-3320177.pdf
IXYH30N120C3D1
Виробник: IXYS
Description: IGBT 1200V 66A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 133 A
Power - Max: 416 W
на замовлення 1363 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+743.91 грн
30+427.73 грн
120+364.39 грн
510+319.75 грн
В кошику  од. на суму  грн.
IXYH40N120C3 DS100416BIXYH40N120C3.pdf
IXYH40N120C3
Виробник: IXYS
Description: IGBT 1200V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+876.42 грн
30+507.57 грн
120+433.88 грн
В кошику  од. на суму  грн.
IXYH40N120C3D1 littelfuse-discrete-igbts-ixyh40n120c3d1-datasheet?assetguid=0a9184c9-b984-421b-b5a1-4ac88a5bd1cd
IXYH40N120C3D1
Виробник: IXYS
Description: IGBT 1200V 64A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1040.70 грн
30+612.09 грн
120+526.60 грн
510+456.75 грн
В кошику  од. на суму  грн.
IXYK100N120C3 DS100404AIXYKX100N120C3.pdf
IXYK100N120C3
Виробник: IXYS
Description: IGBT 1200V 188A TO-264
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 490 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 188 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2000.81 грн
25+1278.07 грн
100+1212.48 грн
В кошику  од. на суму  грн.
IXYN100N120C3 littelfuse_discrete_igbts_xpt_ixyn100n120c3_datasheet.pdf.pdf
IXYN100N120C3
Виробник: IXYS
Description: IGBT MOD 1200V 152A 830W SOT227B
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Current - Collector Cutoff (Max): 25 µA
Power - Max: 830 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 152 A
Part Status: Active
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3548.30 грн
В кошику  од. на суму  грн.
IXYN100N120C3H1 littelfusediscreteigbtsxptixyn100n120c3h1data.pdf
IXYN100N120C3H1
Виробник: IXYS
Description: IGBT MODULE 1200V 134A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 1063 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3088.01 грн
10+2230.64 грн
100+1940.06 грн
В кошику  од. на суму  грн.
IXYN82N120C3
IXYN82N120C3
Виробник: IXYS
Description: IGBT MOD 1200V 105A 500W SOT227B
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 105 A
Part Status: Active
Supplier Device Package: SOT-227B
NTC Thermistor: No
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
Current - Collector Cutoff (Max): 25 µA
Power - Max: 500 W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: Single
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2167.42 грн
10+1536.22 грн
100+1334.05 грн
В кошику  од. на суму  грн.
IXYP30N120C3 littelfuse-discrete-igbts-ixy-30n120c3-datasheet?assetguid=2ea8c579-5c73-49da-91dd-e10580f9526d
IXYP30N120C3
Виробник: IXYS
Description: IGBT 1200V 75A TO-220-3
Packaging: Tube
Power - Max: 500 W
Current - Collector Pulsed (Icm): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 69 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C: 19ns/130ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYP8N90C3 media?resourcetype=datasheets&itemid=11D4BD5C-8AE2-405E-8BEC-58F631EF5FBE&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3-Datasheet.PDF
IXYP8N90C3
Виробник: IXYS
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYP8N90C3D1 littelfuse-discrete-igbts-ixgh42n30c3-datasheet?assetguid=cfdebaeb-c0d6-454a-8b5e-9c212af484cf
IXYP8N90C3D1
Виробник: IXYS
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYR100N120C3 littelfuse_discrete_igbts_xpt_ixyr100n120c3_datasheet.pdf.pdf
IXYR100N120C3
Виробник: IXYS
Description: IGBT 1200V 104A 484W ISOPLUS247
Power - Max: 484 W
Current - Collector Pulsed (Icm): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 104 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2207.71 грн
В кошику  од. на суму  грн.
IXYX100N120C3 DS100404AIXYKX100N120C3.pdf
IXYX100N120C3
Виробник: IXYS
Description: IGBT 1200V 188A PLUS247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 490 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 188 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2013.99 грн
30+1263.23 грн
120+1222.07 грн
В кошику  од. на суму  грн.
MMIX1T550N055T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 55V 550A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3477.79 грн
В кошику  од. на суму  грн.
DSEI8-06AS-TRL Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674
DSEI8-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 8A TO263AA
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DSEP40-03AS-TRL media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet
DSEP40-03AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 300V 40A TO263AA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 3628 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+306.86 грн
10+215.73 грн
100+174.03 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP6-06AS-TRL Littelfuse-Power-Semiconductors-DSEP6-06AS-Datasheet?assetguid=c72fe95f-12c6-409b-b46f-4a51a0e564e7
DSEP6-06AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
на замовлення 5503 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+216.20 грн
10+134.99 грн
100+93.31 грн
500+70.85 грн
1000+67.70 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEP6-06BS-TRL DSEP6-06BS.pdf
DSEP6-06BS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 6A TO252AA
товару немає в наявності
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DSI30-08AS-TRL media?resourcetype=datasheets&itemid=517a38f0-6de7-4d1e-9262-04a5da9f220b&filename=Littelfuse-Power-Semiconductors-DSI30-08AS-Datasheet
DSI30-08AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 800V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+254.94 грн
10+205.65 грн
100+166.40 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSI30-16AS-TRL Littelfuse-Power-Semiconductors-DSI30-16AS-Datasheet?assetguid=728e0950-55e7-4c06-8e1a-890a9b55042f
DSI30-16AS-TRL
Виробник: IXYS
Description: DIODE STANDARD 1600V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
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DSP8-08AS-TRL Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c
DSP8-08AS-TRL
Виробник: IXYS
Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 6143 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+390.55 грн
10+250.80 грн
100+179.74 грн
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DSSK28-006BS-TUB
DSSK28-006BS-TUB
Виробник: IXYS
Description: DIODE ARR SCHOTT 60V 15A TO263AA
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
MMIX1F520N075T2 MMIX1F520N075T2.pdf
MMIX1F520N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 500A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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MMIX1F44N100Q3 littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf
MMIX1F44N100Q3
Виробник: IXYS
Description: MOSFET N-CH 1000V 30A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 20 шт
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MMIX1X100N60B3H1 littelfuse_discrete_igbts_smpd_packages_mmix1x100n60b3h1_datasheet.pdf.pdf
MMIX1X100N60B3H1
Виробник: IXYS
Description: IGBT 600V 145A 400W SMPD
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
Supplier Device Package: 24-SMPD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MMIX1X200N60B3H1 littelfuse-discrete-igbts-mmix1x200n60b3h1-datasheet?assetguid=594a0034-e667-4341-8d0f-6cce662088ba
MMIX1X200N60B3H1
Виробник: IXYS
Description: IGBT 600V 175A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3064.76 грн
20+2071.88 грн
100+2065.93 грн
В кошику  од. на суму  грн.
IXYH40N120B3 littelfuse_discrete_igbts_xpt_ixyh40n120b3_datasheet.pdf.pdf
IXYH40N120B3
Виробник: IXYS
Description: IGBT 1200V 96A 577W TO247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Gate Charge: 87 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 22ns/177ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 577 W
Current - Collector Pulsed (Icm): 200 A
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYH40N120B3D1 DS100413BIXYH40N120B3D1.pdf
IXYH40N120B3D1
Виробник: IXYS
Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1004.28 грн
30+589.03 грн
120+506.13 грн
510+436.34 грн
В кошику  од. на суму  грн.
IXYK120N120C3 DS100451BIXYKX120N120C3.pdf
IXYK120N120C3
Виробник: IXYS
Description: IGBT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2462.66 грн
25+1594.41 грн
100+1467.54 грн
В кошику  од. на суму  грн.
IXYR50N120C3D1 DS100492BIXYR50N120C3D1.pdf
IXYR50N120C3D1
Виробник: IXYS
Description: IGBT 1200V 56A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
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