| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYH40N120C3D1 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 480W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 95ns Turn-off time: 303ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXYH40N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3 Type of transistor: IGBT Power dissipation: 680W Case: TO247-3 Mounting: THT Gate charge: 92nC Kind of package: tube Turn-off time: 140ns Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 230A Collector-emitter voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYH40N120C4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 680W; TO247-3 Type of transistor: IGBT Power dissipation: 680W Case: TO247-3 Mounting: THT Gate charge: 92nC Kind of package: tube Turn-off time: 140ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 230A Collector-emitter voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYT40N120A4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV Type of transistor: IGBT Power dissipation: 600W Case: TO268HV Mounting: SMD Gate charge: 90nC Kind of package: tube Collector current: 140A Pulsed collector current: 275A Collector-emitter voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYT40N120A4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV Type of transistor: IGBT Power dissipation: 600W Case: TO268HV Mounting: SMD Kind of package: reel; tape Collector current: 140A Collector-emitter voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||||
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DSEI60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 52A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 2V Power dissipation: 189W Reverse recovery time: 35ns Technology: FRED |
на замовлення 349 шт: термін постачання 14-30 дні (днів) |
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IXFK48N50 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 48A Power dissipation: 521W Case: TO264 On-state resistance: 0.1Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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DMA50P1200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3 Type of diode: rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: double series Max. forward impulse current: 0.5kA Kind of package: tube |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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DMA50P1200HR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W Type of diode: rectifying Case: ISO247™ Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: double series Max. forward voltage: 1.28V Max. forward impulse current: 555A Kind of package: tube Power dissipation: 210W |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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IXTH32N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO247-3 On-state resistance: 135mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Gate charge: 54nC Features of semiconductor devices: ultra junction x-class |
на замовлення 147 шт: термін постачання 14-30 дні (днів) |
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IXTY2N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Gate charge: 4.3nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDA217S | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; Ch: 2 Case: SO8 Mounting: SMD Kind of package: tube Type of integrated circuit: driver Operating temperature: -40...85°C Number of channels: 2 Kind of integrated circuit: MOSFET gate driver |
на замовлення 184 шт: термін постачання 14-30 дні (днів) |
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IX4426N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: low-side; MOSFET gate driver Kind of output: inverting Kind of package: tube Operating temperature: -40...125°C Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IX4340N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -5...5A Number of channels: 2 Mounting: SMD Case: SO8 Kind of package: tube Operating temperature: -40...125°C Supply voltage: 5...20V Kind of output: non-inverting |
на замовлення 801 шт: термін постачання 14-30 дні (днів) |
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CPC1002NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms Case: SOP4 Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 5ms Switched voltage: max. 60V DC Max. operating current: 700mA Turn-off time: 2ms Control current max.: 50mA On-state resistance: 0.55Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXFK102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 224nC On-state resistance: 33mΩ Drain current: 102A Drain-source voltage: 300V Power dissipation: 700W Case: TO264 Kind of channel: enhancement Mounting: THT |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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FDA217 | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Kind of package: tube |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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IXDF602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 93ns Turn-on time: 93ns |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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IXDN602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Case: DIP8 Mounting: THT Kind of package: tube Output current: -2...2A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 93ns Turn-off time: 93ns Kind of integrated circuit: gate driver; low-side Number of channels: 2 Supply voltage: 4.5...35V |
на замовлення 1135 шт: термін постачання 14-30 дні (днів) |
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IXDN604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Case: DIP8 Mounting: THT Kind of package: tube Output current: -4...4A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 81ns Turn-off time: 79ns Kind of integrated circuit: gate driver; low-side Number of channels: 2 Supply voltage: 4.5...35V |
на замовлення 1065 шт: термін постачання 14-30 дні (днів) |
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IXDD614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 931 шт: термін постачання 14-30 дні (днів) |
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IXDN609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Case: DIP8 Mounting: THT Kind of package: tube Output current: -9...9A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 115ns Turn-off time: 105ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 Supply voltage: 4.5...35V |
на замовлення 580 шт: термін постачання 14-30 дні (днів) |
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IXDI614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 130ns Turn-on time: 140ns |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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IXDI604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 79ns Turn-on time: 81ns |
на замовлення 879 шт: термін постачання 14-30 дні (днів) |
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IXDF604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 79ns Turn-on time: 81ns |
на замовлення 335 шт: термін постачання 14-30 дні (днів) |
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IXDD604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 79ns Turn-on time: 81ns |
на замовлення 128 шт: термін постачання 14-30 дні (днів) |
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IXDI602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 93ns Turn-on time: 93ns |
на замовлення 931 шт: термін постачання 14-30 дні (днів) |
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IXDN614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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| IXKC19N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 430ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CPC2317N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Case: SO8 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA Body dimensions: 9.35x3.81x2.18mm Max. operating current: 120mA On-state resistance: 16Ω Switched voltage: max. 60V AC; max. 60V DC Insulation voltage: 1.5kV Kind of output: MOSFET Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1018NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC Mounting: SMT Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Kind of output: MOSFET Relay variant: 1-phase; current source Turn-off time: 2ms Turn-on time: 3ms Control current max.: 50mA Max. operating current: 0.6A On-state resistance: 0.8Ω Switched voltage: max. 60V DC; max. 600V AC Insulation voltage: 1.5kV Manufacturer series: OptoMOS |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXFL44N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 357W Case: ISOPLUS264™ On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 305nC |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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DSS25-0045A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 45V Load current: 25A Semiconductor structure: single diode Max. forward voltage: 0.59V Max. forward impulse current: 0.4kA Kind of package: tube Power dissipation: 135W |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSS25-0025B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 25V Load current: 25A Semiconductor structure: single diode Max. forward voltage: 0.44V Max. forward impulse current: 330A Kind of package: tube Power dissipation: 90W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCD312-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.6kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MDD312-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2.2kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||
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MCD312-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MDD312-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MDD312-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.6kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCD312-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MDD312-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MDD312-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MDD312-20N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.4kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 0.8kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.6kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.2kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.8kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
IXTX210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Case: PLUS247™ Mounting: THT Power dissipation: 1.04kW Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -210A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube On-state resistance: 7.5mΩ Reverse recovery time: 200ns |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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IXTR210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Case: ISOPLUS247™ Mounting: THT Power dissipation: 390W Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -195A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube On-state resistance: 8mΩ Reverse recovery time: 200ns |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXTN210P10T | IXYS |
Category: Transistor drivers Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A Case: SOT227B Semiconductor structure: single transistor Pulsed drain current: -800A Type of semiconductor module: MOSFET transistor Power dissipation: 830W Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -210A Kind of channel: enhancement Drain-source voltage: -100V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±15V On-state resistance: 7.5mΩ Reverse recovery time: 200ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
IX9907N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Mounting: SMD Operating voltage: 650V DC Kind of package: tube Integrated circuit features: linear dimming; PWM |
на замовлення 486 шт: термін постачання 14-30 дні (днів) |
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IX9908N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Mounting: SMD Integrated circuit features: linear dimming; PWM Kind of package: tube Case: SO8 Output current: 1.7A Operating voltage: 650V DC Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver |
на замовлення 198 шт: термін постачання 14-30 дні (днів) |
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IXFB52N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 52A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: PLUS264™ On-state resistance: 0.16Ω Reverse recovery time: 300ns Mounting: THT Power dissipation: 1.25kW Gate charge: 308nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFH12N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 12A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 1Ω Mounting: THT Power dissipation: 380W Gate charge: 56nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFK32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264 Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 0.3Ω Mounting: THT Power dissipation: 960W Gate charge: 215nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFN52N90P | IXYS |
Category: Transistor drivers Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 43A Kind of channel: enhancement Drain-source voltage: 900V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 0.16Ω Reverse recovery time: 300ns Pulsed drain current: 104A Type of semiconductor module: MOSFET transistor Power dissipation: 890W Gate charge: 308nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFX32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™ Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 0.3Ω Mounting: THT Power dissipation: 960W Gate charge: 215nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
CPC1025N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Max. operating current: 120mA On-state resistance: 30Ω Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYH40N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXYH40N120C4 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 230A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 230A
Collector-emitter voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYH40N120C4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 230A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 230A
Collector-emitter voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYT40N120A4HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector current: 140A
Pulsed collector current: 275A
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector current: 140A
Pulsed collector current: 275A
Collector-emitter voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYT40N120A4HV-TRL |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 140A
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 140A
Collector-emitter voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| DSEI60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 349 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 608.96 грн |
| 5+ | 490.84 грн |
| 10+ | 446.07 грн |
| 30+ | 410.41 грн |
| IXFK48N50 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| DMA50P1200HB |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 454.48 грн |
| 3+ | 379.74 грн |
| 10+ | 335.79 грн |
| 30+ | 307.60 грн |
| DMA50P1200HR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. forward impulse current: 555A
Kind of package: tube
Power dissipation: 210W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. forward impulse current: 555A
Kind of package: tube
Power dissipation: 210W
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 819.68 грн |
| 3+ | 685.68 грн |
| 10+ | 606.09 грн |
| 30+ | 555.51 грн |
| IXTH32N65X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 527.70 грн |
| 3+ | 441.09 грн |
| 10+ | 389.69 грн |
| 30+ | 349.89 грн |
| IXTY2N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
товару немає в наявності
В кошику
од. на суму грн.
| FDA217S |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...85°C
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...85°C
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 273.23 грн |
| 3+ | 232.15 грн |
| 5+ | 218.89 грн |
| 10+ | 199.82 грн |
| 20+ | 183.24 грн |
| 50+ | 176.60 грн |
| IX4426N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
В кошику
од. на суму грн.
| IX4340N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 801 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 101.79 грн |
| 10+ | 58.54 грн |
| 50+ | 48.59 грн |
| 100+ | 44.61 грн |
| 300+ | 38.97 грн |
| CPC1002NTR |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Max. operating current: 700mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Max. operating current: 700mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXFK102N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 33mΩ
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Case: TO264
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 33mΩ
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Case: TO264
Kind of channel: enhancement
Mounting: THT
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1156.30 грн |
| FDA217 |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 282.16 грн |
| 10+ | 198.99 грн |
| 50+ | 177.43 грн |
| IXDF602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.86 грн |
| 10+ | 63.84 грн |
| IXDN602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -2...2A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -2...2A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 93ns
Turn-off time: 93ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1135 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.86 грн |
| 10+ | 63.84 грн |
| 25+ | 58.04 грн |
| 50+ | 56.38 грн |
| IXDN604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -4...4A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 81ns
Turn-off time: 79ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1065 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 137.51 грн |
| 10+ | 93.69 грн |
| 50+ | 78.77 грн |
| IXDD614PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 931 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 195.54 грн |
| 10+ | 135.98 грн |
| 25+ | 126.03 грн |
| 50+ | 120.22 грн |
| 100+ | 116.08 грн |
| 500+ | 114.42 грн |
| IXDN609PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
на замовлення 580 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 125.01 грн |
| 10+ | 86.23 грн |
| 50+ | 77.11 грн |
| 100+ | 76.28 грн |
| IXDI614PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 182.15 грн |
| 10+ | 134.32 грн |
| 25+ | 122.71 грн |
| 50+ | 118.56 грн |
| IXDI604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 879 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.47 грн |
| 10+ | 88.72 грн |
| 50+ | 79.60 грн |
| 100+ | 78.77 грн |
| IXDF604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 335 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.79 грн |
| 10+ | 108.61 грн |
| 50+ | 94.52 грн |
| 100+ | 87.89 грн |
| 250+ | 78.77 грн |
| IXDD604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.47 грн |
| 10+ | 87.89 грн |
| 50+ | 79.60 грн |
| IXDI602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 931 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.26 грн |
| 10+ | 91.20 грн |
| 25+ | 77.94 грн |
| 50+ | 68.82 грн |
| 100+ | 62.18 грн |
| 250+ | 53.89 грн |
| IXDN614PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.48 грн |
| 10+ | 151.73 грн |
| IXKC19N60C5 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
товару немає в наявності
В кошику
од. на суму грн.
| CPC2317N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.35x3.81x2.18mm
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.35x3.81x2.18mm
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
товару немає в наявності
В кошику
од. на суму грн.
| CPC1018NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Kind of output: MOSFET
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Kind of output: MOSFET
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXFL44N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 986.65 грн |
| DSS25-0045A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
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Мінімальне замовлення: 8000 шт
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| DSS25-0025B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
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| MCD312-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
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| MDD312-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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Мінімальне замовлення: 3 шт
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| MCD312-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
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| MDD312-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MDD312-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MCD312-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
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| MDD312-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MCD312-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
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| MDD312-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MDD312-20N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MCD132-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
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| MCD132-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
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| MCD132-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
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| MCD132-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
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| MCD132-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
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| IXTX210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1994.73 грн |
| 10+ | 1678.97 грн |
| IXTR210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2451.90 грн |
| 3+ | 2013.93 грн |
| 10+ | 1809.97 грн |
| IXTN210P10T |
|
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Pulsed drain current: -800A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Category: Transistor drivers
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Pulsed drain current: -800A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
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| IX9907N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 34.82 грн |
| IX9908N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Output current: 1.7A
Operating voltage: 650V DC
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Output current: 1.7A
Operating voltage: 650V DC
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.79 грн |
| 10+ | 43.11 грн |
| 25+ | 38.14 грн |
| 100+ | 33.99 грн |
| IXFB52N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 308nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 308nC
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| IXFH12N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Power dissipation: 380W
Gate charge: 56nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Power dissipation: 380W
Gate charge: 56nC
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| IXFK32N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
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| IXFN52N90P |
|
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 308nC
Category: Transistor drivers
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 308nC
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| IXFX32N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
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| CPC1025N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
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