| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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IXTK210P10T | IXYS |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.04kW Case: TO264 Mounting: THT Kind of package: tube Gate charge: 740nC Technology: TrenchP™ Drain current: -210A Kind of channel: enhancement Drain-source voltage: -100V Gate-source voltage: ±15V On-state resistance: 7.5mΩ Reverse recovery time: 200ns |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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CPC1017NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 60V DC; max. 600V AC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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DSSK16-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.65V Max. forward impulse current: 120A Kind of package: tube Heatsink thickness: 1.14...1.39mm Power dissipation: 90W |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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DSSK16-01AS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Max. forward impulse current: 120A Kind of package: reel; tape Power dissipation: 90W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| CLA120E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; 70mA; TO247-3; THT; tube Type of thyristor: thyristor Mounting: THT Gate current: 70mA Max. off-state voltage: 1.2kV Kind of package: tube Case: TO247-3 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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IXFP8N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB Drain-source voltage: 650V Drain current: 8A Case: TO220AB Polarisation: unipolar On-state resistance: 0.45Ω Power dissipation: 150W Technology: HiPerFET™; X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 11nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 105ns Mounting: THT |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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IXFY8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Drain-source voltage: 650V Drain current: 8A Case: TO252 Polarisation: unipolar On-state resistance: 0.45Ω Power dissipation: 150W Technology: HiPerFET™; X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 11nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 105ns Mounting: SMD |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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IXTY8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Drain-source voltage: 650V Drain current: 8A Case: TO252 Polarisation: unipolar On-state resistance: 0.5Ω Power dissipation: 150W Technology: X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 12nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 200ns Mounting: SMD |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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IXFA8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Drain-source voltage: 650V Drain current: 8A Case: TO263 Polarisation: unipolar On-state resistance: 0.45Ω Power dissipation: 150W Technology: HiPerFET™; X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 11nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 105ns Mounting: SMD |
на замовлення 420 шт: термін постачання 14-30 дні (днів) |
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IXTH48N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Technology: X2-Class |
на замовлення 158 шт: термін постачання 14-30 дні (днів) |
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IXTQ48N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Drain-source voltage: 650V Drain current: 48A Case: TO3PF Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 70A Power dissipation: 70W Gate-source voltage: ±30V Kind of package: tube Gate charge: 76nC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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| DK208DRP | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 4µs Semiconductor structure: single diode Case: DPAK; SC63 Max. forward impulse current: 180A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
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IXTP160N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO220AB On-state resistance: 5mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA160N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO263 On-state resistance: 5mΩ Mounting: SMD Gate charge: 79nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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CPC9909N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 2mA Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: tube |
на замовлення 685 шт: термін постачання 14-30 дні (днів) |
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CPC9909NE | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: tube |
на замовлення 1016 шт: термін постачання 14-30 дні (днів) |
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| CPC9909NETR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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CPC9909NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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MXHV9910B | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Integrated circuit features: linear dimming; PWM Mounting: SMD Input voltage: 8...450V Kind of package: tube Output current: 0.28A Operating temperature: -40...85°C Output voltage: 12V Frequency: 64kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MXHV9910BE | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Integrated circuit features: linear dimming; PWM Mounting: SMD Input voltage: 8...450V Kind of package: tube Output current: 0.28A Operating temperature: -40...85°C Output voltage: 12V Frequency: 64kHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| MXHV9910BETR | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Integrated circuit features: linear dimming; PWM Mounting: SMD Input voltage: 8...450V Kind of package: reel; tape Output current: 0.28A Operating temperature: -40...85°C Output voltage: 12V Frequency: 64kHz |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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MXHV9910BTR | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Integrated circuit features: linear dimming; PWM Mounting: SMD Input voltage: 8...450V Kind of package: reel; tape Output current: 0.28A Operating temperature: -40...85°C Output voltage: 12V Frequency: 64kHz |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXFP60N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO220AB On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50nC Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns |
на замовлення 245 шт: термін постачання 14-30 дні (днів) |
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IXFP60N25X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 36W Case: TO220FP On-state resistance: 23mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 95ns Features of semiconductor devices: ultra junction x-class |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
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CPC1965G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x7.62x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 260V AC Case: DIP4 Max. operating current: 1A Control current max.: 100mA |
на замовлення 309 шт: термін постачання 14-30 дні (днів) |
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IXTA76P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: SMD Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 70ns |
на замовлення 137 шт: термін постачання 14-30 дні (днів) |
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IXTA76N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO263 On-state resistance: 44mΩ Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 148ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA76P10T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: P Drain-source voltage: 100V Drain current: 76A Power dissipation: 298W Case: D2PAK; TO263 Gate-source voltage: 15V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IXFN56N90P | IXYS |
Category: Transistor modules Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhancement Power dissipation: 1kW Technology: HiPerFET™; Polar™ Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Pulsed drain current: 168A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
| IXBT14N300HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV Mounting: SMD Collector-emitter voltage: 3kV Power dissipation: 200W Gate charge: 62nC Pulsed collector current: 120A Type of transistor: IGBT Kind of package: tube Case: TO268HV Gate-emitter voltage: ±20V Collector current: 38A |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |||||||||||||
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MCC132-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 Max. forward impulse current: 5.08kA |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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MCC132-08io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| MCC132-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V Gate current: 150/200mA Max. forward voltage: 1.14V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 Max. forward impulse current: 4.04kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-18IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-14IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-16IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CMA80MT1600NHR | IXYS |
Category: Triacs Description: Triac; 1.6kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 325A Gate current: 70/90mA Max. off-state voltage: 1.6kV Max. load current: 40A Kind of package: tube Case: ISO247™ Typ of triac: standard Mounting: THT Max. forward impulse current: 325A |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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| CMA80MT1600NHB | IXYS |
Category: Triacs Description: Triac; 1.6kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 325A Mounting: THT Case: TO247-3 Gate current: 70/90mA Max. off-state voltage: 1.6kV Max. load current: 40A Kind of package: tube Typ of triac: standard Max. forward impulse current: 325A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CMA60MT1600NHB | IXYS |
Category: Triacs Description: Triac; 1.6kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 220A Mounting: THT Case: TO247-3 Gate current: 60/80mA Max. off-state voltage: 1.6kV Max. load current: 30A Kind of package: tube Typ of triac: standard Max. forward impulse current: 220A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CMA60MT1600NHR | IXYS |
Category: Triacs Description: Triac; 1.6kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 220A Mounting: THT Case: ISO247™ Gate current: 60/80mA Max. off-state voltage: 1.6kV Max. load current: 30A Kind of package: tube Typ of triac: standard Max. forward impulse current: 220A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DSP8-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: TO220AB Max. forward voltage: 1.08V Max. forward impulse current: 100A Power dissipation: 100W Kind of package: tube |
на замовлення 162 шт: термін постачання 14-30 дні (днів) |
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DSP8-12AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: D2PAK Max. forward voltage: 1.08V Max. forward impulse current: 120kA Power dissipation: 100W Kind of package: reel; tape |
на замовлення 790 шт: термін постачання 14-30 дні (днів) |
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DSP8-12AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: D2PAK Max. forward voltage: 1.08V Max. forward impulse current: 120A Power dissipation: 100W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IX4427N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Case: SO8 Mounting: SMD Supply voltage: 4.5...35V Output current: -1.5...1.5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Kind of package: tube Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 |
на замовлення 1831 шт: термін постачання 14-30 дні (днів) |
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IX4427MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Case: DFN8 Mounting: SMD Supply voltage: 4.5...30V Output current: -1.5...1.5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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IXBT16N170AHV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV Technology: BiMOSFET™ Mounting: SMD Case: TO268HV Collector-emitter voltage: 1.7kV Power dissipation: 150W Gate charge: 65nC Features of semiconductor devices: high voltage Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 43ns Kind of package: tube Turn-off time: 370ns Gate-emitter voltage: ±20V Collector current: 10A |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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IXBT16N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Collector-emitter voltage: 1.7kV Power dissipation: 150W Gate charge: 65nC Features of semiconductor devices: high voltage Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 43ns Kind of package: tube Turn-off time: 370ns Gate-emitter voltage: ±20V Collector current: 10A |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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IXFN26N100P | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 390mΩ Reverse recovery time: 300ns Pulsed drain current: 65A Type of semiconductor module: MOSFET transistor Power dissipation: 595W Gate charge: 197nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 23A Kind of channel: enhancement Drain-source voltage: 1kV Mechanical mounting: screw |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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IXGP20N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXGP20N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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IXYP20N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 200ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXYH40N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 577W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 175A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 95ns Turn-off time: 303ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXGH40N120A2 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3 Type of transistor: IGBT Technology: PT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 360W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 136nC Kind of package: tube Turn-on time: 55ns Turn-off time: 2.3µs |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXGH40N120B2D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 138nC Kind of package: tube Turn-on time: 79ns Turn-off time: 770ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXGH40N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Collector-emitter voltage: 1.2kV Power dissipation: 380W Gate charge: 142nC Technology: GenX3™; PT Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 52ns Kind of package: tube Case: TO247-3 Turn-off time: 475ns Gate-emitter voltage: ±20V Collector current: 40A Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXGH40N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 52ns Turn-off time: 475ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXYH40N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 275A Mounting: THT Gate charge: 90nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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IXYH40N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 577W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 84ns Turn-off time: 411ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTK210P10T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.04kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.04kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1982.32 грн |
| CPC1017NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DSSK16-01A |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 231.04 грн |
| DSSK16-01AS |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
товару немає в наявності
В кошику
од. на суму грн.
| CLA120E1200HB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; 70mA; TO247-3; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 70mA
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: TO247-3
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; 70mA; TO247-3; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 70mA
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: TO247-3
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFP8N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Drain-source voltage: 650V
Drain current: 8A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Drain-source voltage: 650V
Drain current: 8A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: THT
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 166.48 грн |
| 10+ | 150.18 грн |
| 50+ | 147.60 грн |
| IXFY8N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.46 грн |
| IXTY8N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.5Ω
Power dissipation: 150W
Technology: X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 200ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.5Ω
Power dissipation: 150W
Technology: X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 200ns
Mounting: SMD
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 171.89 грн |
| 10+ | 123.57 грн |
| IXFA8N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Drain-source voltage: 650V
Drain current: 8A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Drain-source voltage: 650V
Drain current: 8A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
на замовлення 420 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.78 грн |
| 10+ | 53.21 грн |
| IXTH48N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: X2-Class
на замовлення 158 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1000.86 грн |
| 2+ | 552.65 грн |
| 5+ | 521.75 грн |
| 120+ | 510.60 грн |
| IXTQ48N65X2M |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Drain-source voltage: 650V
Drain current: 48A
Case: TO3PF
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 70A
Power dissipation: 70W
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 76nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Drain-source voltage: 650V
Drain current: 48A
Case: TO3PF
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 70A
Power dissipation: 70W
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 76nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 845.60 грн |
| 3+ | 707.97 грн |
| 10+ | 625.59 грн |
| DK208DRP |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward impulse current: 180A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IXTP160N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику
од. на суму грн.
| IXTA160N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| CPC9909N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 2mA
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 2mA
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.88 грн |
| 5+ | 127.01 грн |
| 9+ | 112.42 грн |
| 24+ | 106.41 грн |
| 25+ | 102.98 грн |
| CPC9909NE |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1016 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 181.13 грн |
| 9+ | 114.13 грн |
| 24+ | 108.13 грн |
| 100+ | 104.69 грн |
| 200+ | 103.84 грн |
| CPC9909NETR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CPC9909NTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MXHV9910B |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: tube
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: tube
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
товару немає в наявності
В кошику
од. на суму грн.
| MXHV9910BE |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: tube
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: tube
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MXHV9910BETR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: reel; tape
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: reel; tape
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MXHV9910BTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: reel; tape
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Input voltage: 8...450V
Kind of package: reel; tape
Output current: 0.28A
Operating temperature: -40...85°C
Output voltage: 12V
Frequency: 64kHz
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXFP60N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 606.25 грн |
| 3+ | 510.60 грн |
| 10+ | 418.78 грн |
| 50+ | 393.03 грн |
| IXFP60N25X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 95ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 95ns
Features of semiconductor devices: ultra junction x-class
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 728.24 грн |
| 3+ | 399.04 грн |
| 7+ | 376.73 грн |
| CPC1965G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x7.62x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x7.62x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
на замовлення 309 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 530.47 грн |
| 10+ | 441.09 грн |
| 25+ | 405.04 грн |
| IXTA76P10T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 512.91 грн |
| 3+ | 418.78 грн |
| 4+ | 310.65 грн |
| 9+ | 293.49 грн |
| IXTA76N25T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTA76P10T-TRL |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| IXFN56N90P |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Pulsed drain current: 168A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Pulsed drain current: 168A
Type of semiconductor module: MOSFET transistor
товару немає в наявності
Мінімальне замовлення: 300 шт
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од. на суму грн.
| IXBT14N300HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
товару немає в наявності
Мінімальне замовлення: 30 шт
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од. на суму грн.
| MCC132-12io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5434.04 грн |
| 6+ | 4821.92 грн |
| MCC132-08io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4007.15 грн |
| 3+ | 3473.78 грн |
| MCC132-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
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| MCC132-14io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
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| MCC132-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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од. на суму грн.
| MCC132-18IO1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| MCC132-14IO1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| MCC132-16IO1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| CMA80MT1600NHR |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 325A
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Max. forward impulse current: 325A
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 325A
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Max. forward impulse current: 325A
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 752.26 грн |
| 2+ | 527.76 грн |
| 6+ | 498.58 грн |
| 30+ | 479.70 грн |
| CMA80MT1600NHB |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 325A
Mounting: THT
Case: TO247-3
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 325A
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 325A
Mounting: THT
Case: TO247-3
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 325A
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| CMA60MT1600NHB |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 220A
Mounting: THT
Case: TO247-3
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 220A
Mounting: THT
Case: TO247-3
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
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| CMA60MT1600NHR |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 220A
Mounting: THT
Case: ISO247™
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 220A
Mounting: THT
Case: ISO247™
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
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| DSP8-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
на замовлення 162 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 327.15 грн |
| 5+ | 227.41 грн |
| 10+ | 190.51 грн |
| 25+ | 149.32 грн |
| 50+ | 128.72 грн |
| DSP8-12AS-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
на замовлення 790 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.02 грн |
| 5+ | 223.98 грн |
| 10+ | 204.24 грн |
| 25+ | 178.49 грн |
| 100+ | 163.91 грн |
| DSP8-12AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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| IX4427N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Mounting: SMD
Supply voltage: 4.5...35V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
на замовлення 1831 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.40 грн |
| 10+ | 54.15 грн |
| 21+ | 48.74 грн |
| 50+ | 45.74 грн |
| 100+ | 44.28 грн |
| IX4427MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 89.64 грн |
| 10+ | 59.21 грн |
| 18+ | 55.78 грн |
| 25+ | 54.06 грн |
| 49+ | 52.35 грн |
| 50+ | 50.63 грн |
| IXBT16N170AHV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1138.56 грн |
| 3+ | 940.53 грн |
| 10+ | 844.42 грн |
| IXBT16N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1153.35 грн |
| 3+ | 940.53 грн |
| IXFN26N100P |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 390mΩ
Reverse recovery time: 300ns
Pulsed drain current: 65A
Type of semiconductor module: MOSFET transistor
Power dissipation: 595W
Gate charge: 197nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 1kV
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 390mΩ
Reverse recovery time: 300ns
Pulsed drain current: 65A
Type of semiconductor module: MOSFET transistor
Power dissipation: 595W
Gate charge: 197nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 23A
Kind of channel: enhancement
Drain-source voltage: 1kV
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2602.43 грн |
| 2+ | 2285.24 грн |
| IXGP20N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
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Мінімальне замовлення: 300 шт
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| IXGP20N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 671.86 грн |
| 4+ | 291.77 грн |
| 10+ | 276.32 грн |
| IXYP20N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
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| IXYH40N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
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| IXGH40N120A2 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXGH40N120B2D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
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| IXGH40N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Collector-emitter voltage: 1.2kV
Power dissipation: 380W
Gate charge: 142nC
Technology: GenX3™; PT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 52ns
Kind of package: tube
Case: TO247-3
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Collector-emitter voltage: 1.2kV
Power dissipation: 380W
Gate charge: 142nC
Technology: GenX3™; PT
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 52ns
Kind of package: tube
Case: TO247-3
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Collector current: 40A
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| IXGH40N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
товару немає в наявності
В кошику
од. на суму грн.
| IXYH40N120A4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 275A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 275A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYH40N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
товару немає в наявності
В кошику
од. на суму грн.