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MIXG300PF1700TSF IXYS Description: IGBT MODULE - PHASELEG SIMBUS F-
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SimBus F
IGBT Type: PT
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
3+17129.78 грн
Мінімальне замовлення: 3
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N0465WN140 IXYS Description: SCR 1.4KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.4 kV
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IXYH40N120C4H1 IXYH40N120C4H1 IXYS ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05 Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
1+754.69 грн
30+431.60 грн
120+366.83 грн
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E1250HC45E IXYS Description: DIODE GEN PURP 4.5KV 1355A W122
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Current - Average Rectified (Io): 1355A
Supplier Device Package: W122
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
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DCG45X1200NA DCG45X1200NA IXYS Littelfuse-Power-Semiconductors-DCG45X1200NA-Datasheet?assetguid=82abda0c-fa24-4e04-914e-a630a545a961 Description: DIODE MOD SIC 1200V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 22A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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DNA30EM2200PZ-TUB DNA30EM2200PZ-TUB IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+452.65 грн
50+345.51 грн
100+296.14 грн
500+247.05 грн
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K2325TJ600 IXYS media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf Description: SCR 6KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6 kV
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K2325TJ650 IXYS media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf Description: SCR 6.5KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6.5 kV
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IXFH67N10Q IXYS IXF%28H%2CM%2967N10%2C_75N10.pdf Description: MOSFET N-CH 100V 67A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXYA20N120C4HV-TRL IXYS Description: DISC. IGBT XPT-GENX4 TO-263HV
Packaging: Tape & Reel (TR)
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MCNA220P2200YA MCNA220P2200YA IXYS media?resourcetype=datasheets&amp;itemid=f849e888-5154-4479-92fb-1e7b861764d8&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna220p2200ya%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+10732.57 грн
В кошику  од. на суму  грн.
MCNA150P2200YA MCNA150P2200YA IXYS MCNA150P2200YA.pdf Description: SCR MODULE 2.2KV 235A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+7732.62 грн
В кошику  од. на суму  грн.
MDD56-12N1B MDD56-12N1B IXYS MDD56-12N1B.pdf Description: DIODE MOD GP 1.2KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+2280.34 грн
10+1951.41 грн
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IXYX300N65A3 IXYX300N65A3 IXYS littelfuse-discrete-igbts-ixy-300n65a3-datasheet?assetguid=38208f0a-6094-421e-ac1a-7d4704ea591b Description: IGBT PT 650V 600A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
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IXTB1909 IXYS Description: POWER MOSFET 500V 100AMP
на замовлення 19470 шт:
термін постачання 21-31 дні (днів)
1+1993.69 грн
10+1771.04 грн
100+1512.32 грн
500+1288.53 грн
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QJ8030NH4RP QJ8030NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
1+533.93 грн
10+347.55 грн
100+260.77 грн
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QJ8030NH4RP QJ8030NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+221.48 грн
Мінімальне замовлення: 500
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QV6012RH4TP QV6012RH4TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
2+294.35 грн
10+185.81 грн
100+130.57 грн
500+100.40 грн
Мінімальне замовлення: 2
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QV6012LH4TP QV6012LH4TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
2+304.62 грн
10+192.89 грн
100+135.79 грн
500+104.58 грн
Мінімальне замовлення: 2
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QV6012LH5TP QV6012LH5TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+306.33 грн
10+194.21 грн
100+136.82 грн
500+105.41 грн
1000+98.03 грн
Мінімальне замовлення: 2
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QV6012NH4TP QV6012NH4TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
2+332.00 грн
10+210.77 грн
100+149.19 грн
500+115.34 грн
Мінімальне замовлення: 2
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QV6012NH5TP QV6012NH5TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
2+333.71 грн
10+212.25 грн
100+150.27 грн
500+116.22 грн
Мінімальне замовлення: 2
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DCG85X1200NA DCG85X1200NA IXYS DCG85X1200NA.pdf Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 43A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+12278.75 грн
10+11074.50 грн
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MIXG240RF1200P-PC IXYS Viewer.aspx?p=http%3A%2F%2Fixapps.ixys.com%2FDataSheet%2FMIXG240RF1200PTED.pdf Description: IGBT MODULE MIXG240RF1200PTED-PC
Packaging: Box
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MIXG360RF1200P-PC IXYS MIXG360RF1200PTED.pdf Description: IGBT MODULE MIXG360RF1200PTED-PC
Packaging: Box
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W2899MC480 IXYS Description: DIODE GEN PURP 4.8KV 2899A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 48 µs
Technology: Standard
Current - Average Rectified (Io): 2899A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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IXTA1R4N100PTRL IXTA1R4N100PTRL IXYS Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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W3082MC420 IXYS media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF Description: DIODE STANDARD 4200V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W3082MC450 IXYS media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF Description: DIODE STANDARD 4500V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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IXGA12N120A3-TRL IXGA12N120A3-TRL IXYS Description: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
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IXXH140N65B4 IXYS media?resourcetype=datasheets&itemid=ee77c7a1-ef04-4808-a4a8-2d44c90c6683&filename=littelfuse_discrete_igbts_xpt_ixxh140n65b4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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IXXH140N65C4 IXYS media?resourcetype=datasheets&itemid=1337f9d6-e395-4c14-b9ae-2e1a8fdfb915&filename=littelfuse_discrete_igbts_xpt_ixxh140n65c4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
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IXXX140N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixxx140n65b4h1_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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N3229QK040 IXYS media?resourcetype=datasheets&amp;itemid=2c25cda7-c378-4178-9d52-fca724bcee0c&amp;filename=littelfuse_discrete_thyristors_phase_control_n3229qk0_0_datasheet.pdf Description: SCR 400V 6305A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 3229 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 6305 A
Voltage - Off State: 400 V
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IXTY2P50PA IXYS media?resourcetype=datasheets&itemid=b70aee1e-47d9-44bf-9501-675ee6ddec21&filename=power_semiconductor_discrete_mosfet_ixty2p50pa_datasheet.pdf Description: AUTOMOTIVE GRADE POLARPTM P-CHAN
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
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DFE250X600NA DFE250X600NA IXYS Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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DHG100X650NA DHG100X650NA IXYS Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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MTC120W55GC-SMD IXYS MTC120W55GC_tent.pdf Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
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W4693QK050 IXYS media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
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W4693QK080 IXYS media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
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MCMA160P1600YA MCMA160P1600YA IXYS media?resourcetype=datasheets&itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+5455.70 грн
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MCMA160P1800YA-MI IXYS media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
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DSSK10-018A DSSK10-018A IXYS DSSK10-018A.pdf Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
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CMA80E1400HB IXYS Description: THYRISTOR - TO247
Packaging: Tube
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MTC120WX55GD-SMD IXYS MTC120WX55GD_tent.pdf Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
13+2184.64 грн
Мінімальне замовлення: 13
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IRFP470 IRFP470 IXYS IRFP470.pdf Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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DGSK20-025AS-TUB DGSK20-025AS-TUB IXYS DGS,DGSK 9, 10, 20-025A,AS.pdf Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
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IXYH40N120B4H1 IXYH40N120B4H1 IXYS PdfFile_145990.pdf Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
1+919.84 грн
30+535.36 грн
120+458.44 грн
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MDD810-12N2 IXYS media?resourcetype=datasheets&itemid=96f50344-a6b2-47eb-8cd8-997806a5138c&filename=littelfuse_diode_modules_single_and_dual_md_810_1_n2_datasheet.pdf Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
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IXFN140N60X3 IXYS Description: DISCRETE MOSFET 140A 600V X3 SOT
Packaging: Tube
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IXYN110N120C4H1 IXYN110N120C4H1 IXYS ixyn110n120c4h1-datasheet.pdf Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
1+3272.05 грн
10+2363.39 грн
100+2177.05 грн
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IXYN110N120B4H1 IXYN110N120B4H1 IXYS Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+2698.76 грн
10+2233.13 грн
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IXYK85N120C4H1 IXYK85N120C4H1 IXYS ixyk85n120c4h1-datasheet?assetguid=b555c4ac-c9da-4e14-893d-e9719a49568a Description: IGBT TRENCH 1200V 220A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+1812.29 грн
25+1139.42 грн
100+1045.77 грн
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IXYN85N120C4H1 IXYN85N120C4H1 IXYS ixyn85n120c4h1-datasheet?assetguid=930f3d26-e1b3-4dd7-9c5a-00ba209dd8d1 Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+2520.78 грн
10+1796.01 грн
100+1584.70 грн
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MXB12R600DPHFC MXB12R600DPHFC IXYS power-semiconductor-multichip-discrete-mxb12r600dphfc-datasheet?assetguid=3aff4714-cbce-41f9-a485-d6be474d0f73 Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
1+926.68 грн
10+622.10 грн
100+469.49 грн
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MCNA40P2200TA MCNA40P2200TA IXYS media?resourcetype=datasheets&amp;itemid=952f8405-8f29-4611-84f1-f4fcab97bad2&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna40p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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MCNA55P2200TA MCNA55P2200TA IXYS media?resourcetype=datasheets&amp;itemid=ab546c32-a62a-4bec-af59-64a87d61a795&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna55p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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MCNA75P2200TA MCNA75P2200TA IXYS media?resourcetype=datasheets&amp;itemid=d097c356-09f8-4361-a33f-a42d9b166a44&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna75p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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MCNA95P2200TA MCNA95P2200TA IXYS media?resourcetype=datasheets&amp;itemid=e20778ab-a8a6-4408-9585-a3df737cd156&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna95p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
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IXFR140N60X3 IXYS Description: DISCRETE MOSFET 140A 600V X3 ISO
Packaging: Tube
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MIXG300PF1700TSF
Виробник: IXYS
Description: IGBT MODULE - PHASELEG SIMBUS F-
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SimBus F
IGBT Type: PT
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+17129.78 грн
Мінімальне замовлення: 3
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N0465WN140
Виробник: IXYS
Description: SCR 1.4KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.4 kV
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IXYH40N120C4H1 ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05
IXYH40N120C4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+754.69 грн
30+431.60 грн
120+366.83 грн
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E1250HC45E
Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 1355A W122
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Current - Average Rectified (Io): 1355A
Supplier Device Package: W122
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
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DCG45X1200NA Littelfuse-Power-Semiconductors-DCG45X1200NA-Datasheet?assetguid=82abda0c-fa24-4e04-914e-a630a545a961
DCG45X1200NA
Виробник: IXYS
Description: DIODE MOD SIC 1200V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 22A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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DNA30EM2200PZ-TUB DNA30EM2200PZ.pdf
DNA30EM2200PZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+452.65 грн
50+345.51 грн
100+296.14 грн
500+247.05 грн
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K2325TJ600 media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf
Виробник: IXYS
Description: SCR 6KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6 kV
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K2325TJ650 media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf
Виробник: IXYS
Description: SCR 6.5KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6.5 kV
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IXFH67N10Q IXF%28H%2CM%2967N10%2C_75N10.pdf
Виробник: IXYS
Description: MOSFET N-CH 100V 67A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXYA20N120C4HV-TRL
Виробник: IXYS
Description: DISC. IGBT XPT-GENX4 TO-263HV
Packaging: Tape & Reel (TR)
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MCNA220P2200YA media?resourcetype=datasheets&amp;itemid=f849e888-5154-4479-92fb-1e7b861764d8&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna220p2200ya%2520datasheet.pdf
MCNA220P2200YA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10732.57 грн
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MCNA150P2200YA MCNA150P2200YA.pdf
MCNA150P2200YA
Виробник: IXYS
Description: SCR MODULE 2.2KV 235A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7732.62 грн
В кошику  од. на суму  грн.
MDD56-12N1B MDD56-12N1B.pdf
MDD56-12N1B
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2280.34 грн
10+1951.41 грн
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IXYX300N65A3 littelfuse-discrete-igbts-ixy-300n65a3-datasheet?assetguid=38208f0a-6094-421e-ac1a-7d4704ea591b
IXYX300N65A3
Виробник: IXYS
Description: IGBT PT 650V 600A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
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IXTB1909
Виробник: IXYS
Description: POWER MOSFET 500V 100AMP
на замовлення 19470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1993.69 грн
10+1771.04 грн
100+1512.32 грн
500+1288.53 грн
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QJ8030NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+533.93 грн
10+347.55 грн
100+260.77 грн
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QJ8030NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+221.48 грн
Мінімальне замовлення: 500
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QV6012RH4TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012RH4TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+294.35 грн
10+185.81 грн
100+130.57 грн
500+100.40 грн
Мінімальне замовлення: 2
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QV6012LH4TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012LH4TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.62 грн
10+192.89 грн
100+135.79 грн
500+104.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
QV6012LH5TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012LH5TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+306.33 грн
10+194.21 грн
100+136.82 грн
500+105.41 грн
1000+98.03 грн
Мінімальне замовлення: 2
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QV6012NH4TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH4TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+332.00 грн
10+210.77 грн
100+149.19 грн
500+115.34 грн
Мінімальне замовлення: 2
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QV6012NH5TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH5TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+333.71 грн
10+212.25 грн
100+150.27 грн
500+116.22 грн
Мінімальне замовлення: 2
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DCG85X1200NA DCG85X1200NA.pdf
DCG85X1200NA
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 43A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12278.75 грн
10+11074.50 грн
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MIXG240RF1200P-PC Viewer.aspx?p=http%3A%2F%2Fixapps.ixys.com%2FDataSheet%2FMIXG240RF1200PTED.pdf
Виробник: IXYS
Description: IGBT MODULE MIXG240RF1200PTED-PC
Packaging: Box
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MIXG360RF1200P-PC MIXG360RF1200PTED.pdf
Виробник: IXYS
Description: IGBT MODULE MIXG360RF1200PTED-PC
Packaging: Box
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W2899MC480
Виробник: IXYS
Description: DIODE GEN PURP 4.8KV 2899A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 48 µs
Technology: Standard
Current - Average Rectified (Io): 2899A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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IXTA1R4N100PTRL
IXTA1R4N100PTRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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W3082MC420 media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF
Виробник: IXYS
Description: DIODE STANDARD 4200V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W3082MC450 media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF
Виробник: IXYS
Description: DIODE STANDARD 4500V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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IXGA12N120A3-TRL
IXGA12N120A3-TRL
Виробник: IXYS
Description: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
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IXXH140N65B4 media?resourcetype=datasheets&itemid=ee77c7a1-ef04-4808-a4a8-2d44c90c6683&filename=littelfuse_discrete_igbts_xpt_ixxh140n65b4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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IXXH140N65C4 media?resourcetype=datasheets&itemid=1337f9d6-e395-4c14-b9ae-2e1a8fdfb915&filename=littelfuse_discrete_igbts_xpt_ixxh140n65c4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
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IXXX140N65B4H1 littelfuse_discrete_igbts_xpt_ixxx140n65b4h1_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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N3229QK040 media?resourcetype=datasheets&amp;itemid=2c25cda7-c378-4178-9d52-fca724bcee0c&amp;filename=littelfuse_discrete_thyristors_phase_control_n3229qk0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 6305A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 3229 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 6305 A
Voltage - Off State: 400 V
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IXTY2P50PA media?resourcetype=datasheets&itemid=b70aee1e-47d9-44bf-9501-675ee6ddec21&filename=power_semiconductor_discrete_mosfet_ixty2p50pa_datasheet.pdf
Виробник: IXYS
Description: AUTOMOTIVE GRADE POLARPTM P-CHAN
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
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DFE250X600NA
DFE250X600NA
Виробник: IXYS
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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DHG100X650NA
DHG100X650NA
Виробник: IXYS
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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MTC120W55GC-SMD MTC120W55GC_tent.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
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W4693QK050 media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
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W4693QK080 media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
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MCMA160P1600YA media?resourcetype=datasheets&itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf
MCMA160P1600YA
Виробник: IXYS
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5455.70 грн
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MCMA160P1800YA-MI media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf
Виробник: IXYS
Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
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DSSK10-018A DSSK10-018A.pdf
DSSK10-018A
Виробник: IXYS
Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
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CMA80E1400HB
Виробник: IXYS
Description: THYRISTOR - TO247
Packaging: Tube
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MTC120WX55GD-SMD MTC120WX55GD_tent.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+2184.64 грн
Мінімальне замовлення: 13
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IRFP470 IRFP470.pdf
IRFP470
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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DGSK20-025AS-TUB DGS,DGSK 9, 10, 20-025A,AS.pdf
DGSK20-025AS-TUB
Виробник: IXYS
Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
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IXYH40N120B4H1 PdfFile_145990.pdf
IXYH40N120B4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+919.84 грн
30+535.36 грн
120+458.44 грн
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MDD810-12N2 media?resourcetype=datasheets&itemid=96f50344-a6b2-47eb-8cd8-997806a5138c&filename=littelfuse_diode_modules_single_and_dual_md_810_1_n2_datasheet.pdf
Виробник: IXYS
Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
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IXFN140N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 140A 600V X3 SOT
Packaging: Tube
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IXYN110N120C4H1 ixyn110n120c4h1-datasheet.pdf
IXYN110N120C4H1
Виробник: IXYS
Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3272.05 грн
10+2363.39 грн
100+2177.05 грн
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IXYN110N120B4H1
IXYN110N120B4H1
Виробник: IXYS
Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2698.76 грн
10+2233.13 грн
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IXYK85N120C4H1 ixyk85n120c4h1-datasheet?assetguid=b555c4ac-c9da-4e14-893d-e9719a49568a
IXYK85N120C4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 220A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1812.29 грн
25+1139.42 грн
100+1045.77 грн
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IXYN85N120C4H1 ixyn85n120c4h1-datasheet?assetguid=930f3d26-e1b3-4dd7-9c5a-00ba209dd8d1
IXYN85N120C4H1
Виробник: IXYS
Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2520.78 грн
10+1796.01 грн
100+1584.70 грн
В кошику  од. на суму  грн.
MXB12R600DPHFC power-semiconductor-multichip-discrete-mxb12r600dphfc-datasheet?assetguid=3aff4714-cbce-41f9-a485-d6be474d0f73
MXB12R600DPHFC
Виробник: IXYS
Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+926.68 грн
10+622.10 грн
100+469.49 грн
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MCNA40P2200TA media?resourcetype=datasheets&amp;itemid=952f8405-8f29-4611-84f1-f4fcab97bad2&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna40p2200ta%2520datasheet.pdf
MCNA40P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
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MCNA55P2200TA media?resourcetype=datasheets&amp;itemid=ab546c32-a62a-4bec-af59-64a87d61a795&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna55p2200ta%2520datasheet.pdf
MCNA55P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
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MCNA75P2200TA media?resourcetype=datasheets&amp;itemid=d097c356-09f8-4361-a33f-a42d9b166a44&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna75p2200ta%2520datasheet.pdf
MCNA75P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
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MCNA95P2200TA media?resourcetype=datasheets&amp;itemid=e20778ab-a8a6-4408-9585-a3df737cd156&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna95p2200ta%2520datasheet.pdf
MCNA95P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
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IXFR140N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 140A 600V X3 ISO
Packaging: Tube
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