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S6X8TS3RP IXYS littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
6+56.60 грн
10+48.00 грн
100+36.77 грн
500+27.28 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CNA30E2200FB CNA30E2200FB IXYS media?resourcetype=datasheets&itemid=03d6ed5c-1cb4-41e7-980c-aaa0d075ef37&filename=Littelfuse-Power-Semiconductors-CNA30E2200FB-Datasheet Description: SCR 2.2KV 47A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 2.2 kV
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LGD8201TH IXYS Description: DPAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 125 W
товару немає в наявності
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LGB8204ATH LGB8204ATH IXYS media?resourcetype=datasheets&itemid=ef372b67-c6a1-42f9-a56c-a2c35c882046&filename=littelfuse_power_semiconductor_ignition_igbt_devices_lgb8204ath_datasheet.pdf Description: D2PAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
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LST3205EL2CT2 IXYS Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
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GWM120-0075P3-SMD SAM IXYS GWM120-0075P3.pdf Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GWM120-0075X1-SMDSAM IXYS GWM120-0075X1.pdf Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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QJ6016LH5TP QJ6016LH5TP IXYS media?resourcetype=datasheets&itemid=934af8ac-0990-4353-9df1-3419f5ddbf24&filename=littelfuse-thyristor-qjxx16xhx-datasheet Description: 16 AMP STANDARD HIGH TEMPERATURE
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+302.68 грн
10+261.79 грн
100+214.47 грн
500+171.34 грн
1000+144.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMA10IM1600UZ-TUB DMA10IM1600UZ-TUB IXYS media?resourcetype=datasheets&itemid=d1ae78d5-d54b-4fde-8c69-d824a195d8c7&filename=Littelfuse-Power-Semiconductors-DMA10IM1600UZ-Datasheet Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
3+127.36 грн
70+98.73 грн
140+81.23 грн
Мінімальне замовлення: 3
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DPF240X400NA DPF240X400NA IXYS Littelfuse-Power-Semiconductors-DPF240X400NA-Datasheet?assetguid=380125f6-bc2b-4f6f-83b6-1fd0111f38c5 Description: DIODE MOD GP 400V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 120 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
1+2228.81 грн
10+2121.35 грн
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R1127NC32P IXYS Description: SCR 3.2KV 2247A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz
Current - On State (It (AV)) (Max): 1127 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.42 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 2247 A
Voltage - Off State: 3.2 kV
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MCMA140PD1600TB-NI MCMA140PD1600TB-NI IXYS PdfFile_212238.pdf Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
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IXFJ52N30Q IXYS Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
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IXDR35N120D1 IXYS Description: IGBT
Packaging: Bulk
Part Status: Obsolete
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MIXG240W1200PZTEH IXYS media?resourcetype=datasheets&itemid=0405cf1e-0e14-4140-89fc-543a75bd096b&filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200pzteh%2520datasheet.pdf Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
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MIXG240W1200PTEH IXYS Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
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MIXG180W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=2926fee0-4fd4-467d-a793-c5df74bfe655&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg180w1200teh%2520datasheet.pdf Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 935 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 100 V
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
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MCNA180P2200YA MCNA180P2200YA IXYS media?resourcetype=datasheets&amp;itemid=9df7a868-bdb5-4c88-925b-a5e4772479df&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna180p2200ya%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+8556.74 грн
В кошику  од. на суму  грн.
MCNA180PD2200YB MCNA180PD2200YB IXYS littelfuse-power-semiconductors-mcna180pd2200yb-datasheet?assetguid=efd11c0c-e9ea-43bd-8660-1c05a6925f84 Description: SCR MODULE 2.2KV 280A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6591.30 грн
В кошику  од. на суму  грн.
MDD26-08N1B MDD26-08N1B IXYS MDD26-08N1B.pdf Description: DIODE MODULE 800V 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+1915.91 грн
10+1701.41 грн
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MCMA200P1600YA IXYS Description: SCR MODULE 1.6KV 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6335.01 грн
В кошику  од. на суму  грн.
MDMA140P1800TG MDMA140P1800TG IXYS MDMA140P1800TG.pdf Description: RECT MOD 1800V 140A
Packaging: Bulk
Part Status: Active
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IX6611T IX6611T IXYS IX6611_00A.pdf Description: IC MOSF DRIVER
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+516.52 грн
10+446.82 грн
25+422.44 грн
100+343.58 грн
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IX6611TR IX6611TR IXYS IX6611_00A.pdf Description: IC MOSF DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
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IXFY4N85X IXFY4N85X IXYS littelfuse-discrete-mosfets-ixf-4n85x-datasheet?assetguid=37800473-7654-42bc-92bc-235668b1794c Description: MOSFET N-CH 850V 3.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
на замовлення 1610 шт:
термін постачання 21-31 дні (днів)
1+336.48 грн
70+160.53 грн
140+146.69 грн
560+117.55 грн
1050+114.09 грн
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DLA40IM800PC-TRL DLA40IM800PC-TRL IXYS DLA40IM800PC.pdf Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DLA40IM800PC-TRL DLA40IM800PC-TRL IXYS DLA40IM800PC.pdf Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
1+352.21 грн
10+304.49 грн
100+249.46 грн
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IXFK140N60X3 IXYS Description: DISCRETE MOSFET 140A 600V X3 TO2
Packaging: Tube
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IXFP16N85X IXYS Description: IXFP16N85X
Packaging: Tube
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IXFP16N85XM IXYS Description: IXFP16N85XM
Packaging: Tube
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MIXG300PF1700TSF IXYS Description: IGBT MODULE - PHASELEG SIMBUS F-
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SimBus F
IGBT Type: PT
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
3+15738.73 грн
Мінімальне замовлення: 3
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N0465WN140 IXYS Description: SCR 1.4KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.4 kV
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IXYH40N120C4H1 IXYH40N120C4H1 IXYS ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05 Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
1+913.54 грн
30+531.40 грн
120+455.04 грн
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E1250HC45E IXYS Description: DIODE GEN PURP 4.5KV 1355A W122
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Current - Average Rectified (Io): 1355A
Supplier Device Package: W122
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
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DCG45X1200NA DCG45X1200NA IXYS Littelfuse-Power-Semiconductors-DCG45X1200NA-Datasheet?assetguid=82abda0c-fa24-4e04-914e-a630a545a961 Description: DIODE MOD SIC 1200V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 22A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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DNA30EM2200PZ-TUB DNA30EM2200PZ-TUB IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+415.89 грн
50+317.45 грн
100+272.09 грн
500+226.98 грн
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K2325TJ600 IXYS media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf Description: SCR 6KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6 kV
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K2325TJ650 IXYS media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf Description: SCR 6.5KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6.5 kV
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IXFH67N10Q IXYS IXF%28H%2CM%2967N10%2C_75N10.pdf Description: MOSFET N-CH 100V 67A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXYA20N120C4HV-TRL IXYS Description: DISC. IGBT XPT-GENX4 TO-263HV
Packaging: Tape & Reel (TR)
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MCNA220P2200YA MCNA220P2200YA IXYS media?resourcetype=datasheets&amp;itemid=f849e888-5154-4479-92fb-1e7b861764d8&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna220p2200ya%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+9861.01 грн
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MCNA150P2200YA MCNA150P2200YA IXYS MCNA150P2200YA.pdf Description: SCR MODULE 2.2KV 235A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+7104.68 грн
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MDD56-12N1B MDD56-12N1B IXYS MDD56-12N1B.pdf Description: DIODE MOD GP 1.2KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+2095.16 грн
10+1792.94 грн
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IXYX300N65A3 IXYX300N65A3 IXYS littelfuse-discrete-igbts-ixy-300n65a3-datasheet?assetguid=38208f0a-6094-421e-ac1a-7d4704ea591b Description: IGBT PT 650V 600A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
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IXTB1909 IXYS Description: POWER MOSFET 500V 100AMP
на замовлення 19470 шт:
термін постачання 21-31 дні (днів)
1+1831.79 грн
10+1627.22 грн
100+1389.51 грн
500+1183.89 грн
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QJ8030NH4RP QJ8030NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
1+506.30 грн
10+330.00 грн
100+240.56 грн
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QJ8030NH4RP QJ8030NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+210.25 грн
Мінімальне замовлення: 500
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QV6012RH4TP QV6012RH4TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
2+270.44 грн
10+170.72 грн
100+119.97 грн
500+92.25 грн
Мінімальне замовлення: 2
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QV6012LH4TP QV6012LH4TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
2+279.88 грн
10+177.23 грн
100+124.76 грн
500+96.09 грн
Мінімальне замовлення: 2
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QV6012LH5TP QV6012LH5TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+281.45 грн
10+178.44 грн
100+125.71 грн
500+96.85 грн
1000+90.07 грн
Мінімальне замовлення: 2
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QV6012NH4TP QV6012NH4TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
2+305.04 грн
10+193.66 грн
100+137.07 грн
500+105.98 грн
Мінімальне замовлення: 2
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QV6012NH5TP QV6012NH5TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
2+306.61 грн
10+195.02 грн
100+138.06 грн
500+106.78 грн
Мінімальне замовлення: 2
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DCG85X1200NA DCG85X1200NA IXYS DCG85X1200NA.pdf Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 43A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+11281.63 грн
10+10175.17 грн
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MIXG240RF1200P-PC IXYS Viewer.aspx?p=http%3A%2F%2Fixapps.ixys.com%2FDataSheet%2FMIXG240RF1200PTED.pdf Description: IGBT MODULE MIXG240RF1200PTED-PC
Packaging: Box
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MIXG360RF1200P-PC IXYS MIXG360RF1200PTED.pdf Description: IGBT MODULE MIXG360RF1200PTED-PC
Packaging: Box
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W2899MC480 IXYS Description: DIODE GEN PURP 4.8KV 2899A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 48 µs
Technology: Standard
Current - Average Rectified (Io): 2899A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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IXTA1R4N100PTRL IXTA1R4N100PTRL IXYS Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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W3082MC420 IXYS media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF Description: DIODE STANDARD 4200V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
товару немає в наявності
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W3082MC450 IXYS media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF Description: DIODE STANDARD 4500V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
товару немає в наявності
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S6X8TS3RP littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf
Виробник: IXYS
Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.60 грн
10+48.00 грн
100+36.77 грн
500+27.28 грн
Мінімальне замовлення: 6
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CNA30E2200FB media?resourcetype=datasheets&itemid=03d6ed5c-1cb4-41e7-980c-aaa0d075ef37&filename=Littelfuse-Power-Semiconductors-CNA30E2200FB-Datasheet
CNA30E2200FB
Виробник: IXYS
Description: SCR 2.2KV 47A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 2.2 kV
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LGD8201TH
Виробник: IXYS
Description: DPAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 125 W
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LGB8204ATH media?resourcetype=datasheets&itemid=ef372b67-c6a1-42f9-a56c-a2c35c882046&filename=littelfuse_power_semiconductor_ignition_igbt_devices_lgb8204ath_datasheet.pdf
LGB8204ATH
Виробник: IXYS
Description: D2PAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
товару немає в наявності
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LST3205EL2CT2
Виробник: IXYS
Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
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GWM120-0075P3-SMD SAM GWM120-0075P3.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GWM120-0075X1-SMDSAM GWM120-0075X1.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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QJ6016LH5TP media?resourcetype=datasheets&itemid=934af8ac-0990-4353-9df1-3419f5ddbf24&filename=littelfuse-thyristor-qjxx16xhx-datasheet
QJ6016LH5TP
Виробник: IXYS
Description: 16 AMP STANDARD HIGH TEMPERATURE
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.68 грн
10+261.79 грн
100+214.47 грн
500+171.34 грн
1000+144.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMA10IM1600UZ-TUB media?resourcetype=datasheets&itemid=d1ae78d5-d54b-4fde-8c69-d824a195d8c7&filename=Littelfuse-Power-Semiconductors-DMA10IM1600UZ-Datasheet
DMA10IM1600UZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.36 грн
70+98.73 грн
140+81.23 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DPF240X400NA Littelfuse-Power-Semiconductors-DPF240X400NA-Datasheet?assetguid=380125f6-bc2b-4f6f-83b6-1fd0111f38c5
DPF240X400NA
Виробник: IXYS
Description: DIODE MOD GP 400V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 120 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2228.81 грн
10+2121.35 грн
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R1127NC32P
Виробник: IXYS
Description: SCR 3.2KV 2247A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz
Current - On State (It (AV)) (Max): 1127 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.42 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 2247 A
Voltage - Off State: 3.2 kV
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MCMA140PD1600TB-NI PdfFile_212238.pdf
MCMA140PD1600TB-NI
Виробник: IXYS
Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
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IXFJ52N30Q
Виробник: IXYS
Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
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IXDR35N120D1
Виробник: IXYS
Description: IGBT
Packaging: Bulk
Part Status: Obsolete
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MIXG240W1200PZTEH media?resourcetype=datasheets&itemid=0405cf1e-0e14-4140-89fc-543a75bd096b&filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200pzteh%2520datasheet.pdf
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
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MIXG240W1200PTEH
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
товару немає в наявності
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MIXG180W1200TEH media?resourcetype=datasheets&amp;itemid=2926fee0-4fd4-467d-a793-c5df74bfe655&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg180w1200teh%2520datasheet.pdf
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 935 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 100 V
товару немає в наявності
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MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
товару немає в наявності
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MCNA180P2200YA media?resourcetype=datasheets&amp;itemid=9df7a868-bdb5-4c88-925b-a5e4772479df&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna180p2200ya%2520datasheet.pdf
MCNA180P2200YA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8556.74 грн
В кошику  од. на суму  грн.
MCNA180PD2200YB littelfuse-power-semiconductors-mcna180pd2200yb-datasheet?assetguid=efd11c0c-e9ea-43bd-8660-1c05a6925f84
MCNA180PD2200YB
Виробник: IXYS
Description: SCR MODULE 2.2KV 280A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6591.30 грн
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MDD26-08N1B MDD26-08N1B.pdf
MDD26-08N1B
Виробник: IXYS
Description: DIODE MODULE 800V 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1915.91 грн
10+1701.41 грн
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MCMA200P1600YA
Виробник: IXYS
Description: SCR MODULE 1.6KV 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6335.01 грн
В кошику  од. на суму  грн.
MDMA140P1800TG MDMA140P1800TG.pdf
MDMA140P1800TG
Виробник: IXYS
Description: RECT MOD 1800V 140A
Packaging: Bulk
Part Status: Active
товару немає в наявності
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IX6611T IX6611_00A.pdf
IX6611T
Виробник: IXYS
Description: IC MOSF DRIVER
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+516.52 грн
10+446.82 грн
25+422.44 грн
100+343.58 грн
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IX6611TR IX6611_00A.pdf
IX6611TR
Виробник: IXYS
Description: IC MOSF DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
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IXFY4N85X littelfuse-discrete-mosfets-ixf-4n85x-datasheet?assetguid=37800473-7654-42bc-92bc-235668b1794c
IXFY4N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 3.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
на замовлення 1610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+336.48 грн
70+160.53 грн
140+146.69 грн
560+117.55 грн
1050+114.09 грн
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DLA40IM800PC-TRL DLA40IM800PC.pdf
DLA40IM800PC-TRL
Виробник: IXYS
Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DLA40IM800PC-TRL DLA40IM800PC.pdf
DLA40IM800PC-TRL
Виробник: IXYS
Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+352.21 грн
10+304.49 грн
100+249.46 грн
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IXFK140N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 140A 600V X3 TO2
Packaging: Tube
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IXFP16N85X
Виробник: IXYS
Description: IXFP16N85X
Packaging: Tube
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IXFP16N85XM
Виробник: IXYS
Description: IXFP16N85XM
Packaging: Tube
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MIXG300PF1700TSF
Виробник: IXYS
Description: IGBT MODULE - PHASELEG SIMBUS F-
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SimBus F
IGBT Type: PT
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+15738.73 грн
Мінімальне замовлення: 3
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N0465WN140
Виробник: IXYS
Description: SCR 1.4KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.4 kV
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IXYH40N120C4H1 ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05
IXYH40N120C4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+913.54 грн
30+531.40 грн
120+455.04 грн
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E1250HC45E
Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 1355A W122
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Current - Average Rectified (Io): 1355A
Supplier Device Package: W122
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
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DCG45X1200NA Littelfuse-Power-Semiconductors-DCG45X1200NA-Datasheet?assetguid=82abda0c-fa24-4e04-914e-a630a545a961
DCG45X1200NA
Виробник: IXYS
Description: DIODE MOD SIC 1200V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 22A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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DNA30EM2200PZ-TUB DNA30EM2200PZ.pdf
DNA30EM2200PZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+415.89 грн
50+317.45 грн
100+272.09 грн
500+226.98 грн
В кошику  од. на суму  грн.
K2325TJ600 media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf
Виробник: IXYS
Description: SCR 6KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6 kV
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K2325TJ650 media?resourcetype=datasheets&amp;itemid=ba3e6e93-e9f2-4928-9445-216aab2b38b4&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k2325tj6_0_datasheet.pdf
Виробник: IXYS
Description: SCR 6.5KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6.5 kV
товару немає в наявності
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IXFH67N10Q IXF%28H%2CM%2967N10%2C_75N10.pdf
Виробник: IXYS
Description: MOSFET N-CH 100V 67A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXYA20N120C4HV-TRL
Виробник: IXYS
Description: DISC. IGBT XPT-GENX4 TO-263HV
Packaging: Tape & Reel (TR)
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MCNA220P2200YA media?resourcetype=datasheets&amp;itemid=f849e888-5154-4479-92fb-1e7b861764d8&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna220p2200ya%2520datasheet.pdf
MCNA220P2200YA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9861.01 грн
В кошику  од. на суму  грн.
MCNA150P2200YA MCNA150P2200YA.pdf
MCNA150P2200YA
Виробник: IXYS
Description: SCR MODULE 2.2KV 235A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7104.68 грн
В кошику  од. на суму  грн.
MDD56-12N1B MDD56-12N1B.pdf
MDD56-12N1B
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2095.16 грн
10+1792.94 грн
В кошику  од. на суму  грн.
IXYX300N65A3 littelfuse-discrete-igbts-ixy-300n65a3-datasheet?assetguid=38208f0a-6094-421e-ac1a-7d4704ea591b
IXYX300N65A3
Виробник: IXYS
Description: IGBT PT 650V 600A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
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IXTB1909
Виробник: IXYS
Description: POWER MOSFET 500V 100AMP
на замовлення 19470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1831.79 грн
10+1627.22 грн
100+1389.51 грн
500+1183.89 грн
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QJ8030NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+506.30 грн
10+330.00 грн
100+240.56 грн
В кошику  од. на суму  грн.
QJ8030NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+210.25 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
QV6012RH4TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012RH4TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+270.44 грн
10+170.72 грн
100+119.97 грн
500+92.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
QV6012LH4TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012LH4TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+279.88 грн
10+177.23 грн
100+124.76 грн
500+96.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
QV6012LH5TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012LH5TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+281.45 грн
10+178.44 грн
100+125.71 грн
500+96.85 грн
1000+90.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
QV6012NH4TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH4TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+305.04 грн
10+193.66 грн
100+137.07 грн
500+105.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
QV6012NH5TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH5TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+306.61 грн
10+195.02 грн
100+138.06 грн
500+106.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DCG85X1200NA DCG85X1200NA.pdf
DCG85X1200NA
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 43A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11281.63 грн
10+10175.17 грн
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MIXG240RF1200P-PC Viewer.aspx?p=http%3A%2F%2Fixapps.ixys.com%2FDataSheet%2FMIXG240RF1200PTED.pdf
Виробник: IXYS
Description: IGBT MODULE MIXG240RF1200PTED-PC
Packaging: Box
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MIXG360RF1200P-PC MIXG360RF1200PTED.pdf
Виробник: IXYS
Description: IGBT MODULE MIXG360RF1200PTED-PC
Packaging: Box
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W2899MC480
Виробник: IXYS
Description: DIODE GEN PURP 4.8KV 2899A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 48 µs
Technology: Standard
Current - Average Rectified (Io): 2899A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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IXTA1R4N100PTRL
IXTA1R4N100PTRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
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W3082MC420 media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF
Виробник: IXYS
Description: DIODE STANDARD 4200V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W3082MC450 media?resourcetype=datasheets&itemid=05E7F4A2-F30D-4D21-BA39-877B28451567&filename=Littelfuse-Discrete-Diodes-Rectifier-W3082MC4-0-Datasheet.PDF
Виробник: IXYS
Description: DIODE STANDARD 4500V 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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