| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTA2N80P | IXYS |
 Description: MOSFET N-CH 800V 2A TO263Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 5.5V @ 50µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA42N25P | IXYS |
Description: MOSFET N-CH 250V 42A TO-263 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||
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IXTA4N80P | IXYS |
Description: MOSFET N-CH 800V 3.6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 100µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXTA50N20P | IXYS |
Description: MOSFET N-CH 200V 50A TO263 Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA62N15P | IXYS |
Description: MOSFET N-CH 150V 62A TO263 Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
на замовлення 272 шт: термін постачання 21-31 дні (днів) |
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IXTA70N085T | IXYS |
Description: MOSFET N-CH 85V 70A TO263 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4V @ 50µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA76N075T | IXYS |
Description: MOSFET N-CH 75V 76A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-263AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA80N10T7 | IXYS |
Description: MOSFET N-CH 100V 80A TO263-7 Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-263-7 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||
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IXTA88N085T | IXYS |
Description: MOSFET N-CH 85V 88A TO-263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA88N085T7 | IXYS |
Description: MOSFET N-CH 85V 88A TO-263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA90N055T | IXYS |
Description: MOSFET N-CH 55V 90A TO263 Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4V @ 50µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA98N075T | IXYS |
Description: MOSFET N-CH 75V 98A TO-263 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXTA98N075T7 | IXYS | Description: MOSFET N-CH 75V 98A TO-263-7 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||
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IXTB62N50L | IXYS |
Description: MOSFET N-CH 500V 62A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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IXTC160N085T | IXYS |
Description: MOSFET N-CH 85V 110A ISOPLUS220 Drain to Source Voltage (Vdss): 85 V Part Status: Obsolete Supplier Device Package: ISOPLUS220™ Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC160N10T | IXYS |
Description: MOSFET N-CH 100V 83A ISOPLUS220 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ISOPLUS220™ Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||
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IXTC180N055T | IXYS | Description: MOSFET N-CH 55V ISOPLUS220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC180N085T | IXYS |
Description: MOSFET N-CH 85V 110A ISOPLUS220 Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ISOPLUS220™ Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC180N10T | IXYS |
Description: MOSFET N-CH 100V 90A ISOPLUS220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC200N085T | IXYS |
Description: MOSFET N-CH 85V 110A ISOPLUS220 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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IXTC200N10T | IXYS |
Description: MOSFET N-CH 100V 101A ISOPLUS220 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||
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IXTC220N055T | IXYS |
Description: MOSFET N-CH 55V 130A ISOPLUS220 Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ISOPLUS220™ Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC220N075T | IXYS |
Description: MOSFET N-CH 75V 115A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC230N085T | IXYS |
Description: MOSFET N-CH 85V 120A ISOPLUS220 Drain to Source Voltage (Vdss): 85 V Supplier Device Package: ISOPLUS220™ Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||
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IXTC240N055T | IXYS |
Description: MOSFET N-CH 55V 132A ISOPLUS220 Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ISOPLUS220™ Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 132A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC250N075T | IXYS |
Description: MOSFET N-CH 75V 128A ISOPLUS220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTC280N055T | IXYS |
Description: MOSFET N-CH 55V 145A ISOPLUS220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTF200N10T | IXYS |
Description: MOSFET N-CH 100V 90A I4-PAC-5 |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||
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IXTF230N085T | IXYS |
Description: MOSFET N-CH 85V 130A I4PAC Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS i4-PAC™ Vgs(th) (Max) @ Id: 4V @ 250mA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTF250N075T | IXYS |
Description: MOSFET N-CH 75V 140A I4PAC Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS i4-PAC™ Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTF280N055T | IXYS |
Description: MOSFET N-CH 55V 160A I4PAC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
.jpg "IXTH10N100D") |
IXTH10N100D | IXYS |
Description: MOSFET N-CH 1000V 10A TO247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||
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IXTH12N120 | IXYS |
Description: MOSFET N-CH 1200V 12A TO247 Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Box |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||
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IXTH130N10T | IXYS |
Description: MOSFET N-CH 100V 130A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH152N085T | IXYS |
Description: MOSFET N-CH 85V 152A TO247 Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 152A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH160N075T | IXYS |
Description: MOSFET N-CH 75V 160A TO247 Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH16P20 | IXYS |
Description: MOSFET P-CH 200V 16A TO-247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||
.jpg "IXTH180N085T") |
IXTH180N085T | IXYS |
Description: MOSFET N-CH 85V 180A TO247 Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH180N10T | IXYS |
Description: MOSFET N-CH 100V 180A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
на замовлення 1870 шт: термін постачання 21-31 дні (днів) |
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IXTH182N055T | IXYS |
Description: MOSFET N-CH 55V 182A TO247 Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 182A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH200N075T | IXYS |
Description: MOSFET N-CH 75V 200A TO-247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH200N085T | IXYS |
Description: MOSFET N-CH 85V 200A TO247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH20N50D | IXYS |
Description: MOSFET N-CH 500V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V Power Dissipation (Max): 400W (Tc) Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXTH220N055T | IXYS |
Description: MOSFET N-CH 55V 220A TO247 Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH220N075T | IXYS |
Description: MOSFET N-CH 75V 220A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH22N50P | IXYS |
Description: MOSFET N-CH 500V 22A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH230N085T | IXYS |
Description: MOSFET N-CH 85V 230A TO247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH240N055T | IXYS |
Description: MOSFET N-CH 55V 240A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH250N075T | IXYS |
Description: MOSFET N-CH 75V 250A TO247 Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH280N055T | IXYS |
Description: MOSFET N-CH 55V 280A TO247 Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) FET Type: N-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH36P10 | IXYS |
Description: MOSFET P-CH 100V 36A TO-247 |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||
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IXTH3N120 | IXYS |
Description: MOSFET N-CH 1200V 3A TO247 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXTH88N15 | IXYS |
Description: MOSFET N-CH 150V 88A TO-247AD |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | ||||||||||
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IXTK120N20P | IXYS |
Description: MOSFET N-CH 200V 120A TO264 Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 (IXTK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXTK140N20P | IXYS |
Description: MOSFET N-CH 200V 140A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTK17N120L | IXYS |
Description: MOSFET N-CH 1200V 17A TO264 Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-264 (IXTK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTK250N10 | IXYS |
Description: MOSFET N-CH 100V 250A TO264 Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 (IXTK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Box |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||
| IXTL2x180N10T | IXYS |
Description: MOSFET 2N-CH 100V 100A I5-PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUSi5-Pak™ |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||
| IXTL2X200N085T | IXYS |
Description: MOSFET 2N-CH 85V 112A I5-PAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IXTL2X220N075T | IXYS |
Description: MOSFET 2N-CH 75V 120A I5-PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150W Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ISOPLUSi5-Pak™ |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTA2N80P |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 2A TO263
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 800V 2A TO263
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTA42N25P |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 42A TO-263
Description: MOSFET N-CH 250V 42A TO-263
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXTA4N80P |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Description: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTA50N20P |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 200V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTA62N15P |
|
Виробник: IXYS
Description: MOSFET N-CH 150V 62A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 150V 62A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 353.36 грн |
| 50+ | 269.83 грн |
| 100+ | 231.29 грн |
| IXTA70N085T |
Виробник: IXYS
Description: MOSFET N-CH 85V 70A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Description: MOSFET N-CH 85V 70A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
товару немає в наявності
В кошику
од. на суму грн.
| IXTA76N075T |
|
Виробник: IXYS
Description: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
Description: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
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| IXTA80N10T7 |
Виробник: IXYS
Description: MOSFET N-CH 100V 80A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Description: MOSFET N-CH 100V 80A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXTA88N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 88A TO-263
Description: MOSFET N-CH 85V 88A TO-263
товару немає в наявності
В кошику
од. на суму грн.
| IXTA88N085T7 |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 88A TO-263-7
Description: MOSFET N-CH 85V 88A TO-263-7
товару немає в наявності
В кошику
од. на суму грн.
| IXTA90N055T |
Виробник: IXYS
Description: MOSFET N-CH 55V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 55V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| IXTA98N075T |
|
Виробник: IXYS
Description: MOSFET N-CH 75V 98A TO-263
Description: MOSFET N-CH 75V 98A TO-263
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTA98N075T7 |
Виробник: IXYS
Description: MOSFET N-CH 75V 98A TO-263-7
Description: MOSFET N-CH 75V 98A TO-263-7
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXTB62N50L |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Description: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3791.62 грн |
| 25+ | 2692.73 грн |
| IXTC160N085T |
Виробник: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Description: MOSFET N-CH 85V 110A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTC160N10T |
Виробник: IXYS
Description: MOSFET N-CH 100V 83A ISOPLUS220
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Description: MOSFET N-CH 100V 83A ISOPLUS220
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXTC180N055T |
Виробник: IXYS
Description: MOSFET N-CH 55V ISOPLUS220
Description: MOSFET N-CH 55V ISOPLUS220
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В кошику
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| IXTC180N085T |
Виробник: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Description: MOSFET N-CH 85V 110A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTC180N10T |
|
Виробник: IXYS
Description: MOSFET N-CH 100V 90A ISOPLUS220
Description: MOSFET N-CH 100V 90A ISOPLUS220
товару немає в наявності
В кошику
од. на суму грн.
| IXTC200N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
Description: MOSFET N-CH 85V 110A ISOPLUS220
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| IXTC200N10T |
|
Виробник: IXYS
Description: MOSFET N-CH 100V 101A ISOPLUS220
Description: MOSFET N-CH 100V 101A ISOPLUS220
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXTC220N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 130A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Description: MOSFET N-CH 55V 130A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTC220N075T |
Виробник: IXYS
Description: MOSFET N-CH 75V 115A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Description: MOSFET N-CH 75V 115A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTC230N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 120A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Description: MOSFET N-CH 85V 120A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXTC240N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 132A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Description: MOSFET N-CH 55V 132A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTC250N075T |
|
Виробник: IXYS
Description: MOSFET N-CH 75V 128A ISOPLUS220
Description: MOSFET N-CH 75V 128A ISOPLUS220
товару немає в наявності
В кошику
од. на суму грн.
| IXTC280N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 145A ISOPLUS220
Description: MOSFET N-CH 55V 145A ISOPLUS220
товару немає в наявності
В кошику
од. на суму грн.
| IXTF200N10T |
|
Виробник: IXYS
Description: MOSFET N-CH 100V 90A I4-PAC-5
Description: MOSFET N-CH 100V 90A I4-PAC-5
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| IXTF230N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 130A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
Description: MOSFET N-CH 85V 130A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXTF250N075T |
Виробник: IXYS
Description: MOSFET N-CH 75V 140A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
Description: MOSFET N-CH 75V 140A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
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| IXTF280N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 160A I4PAC
Description: MOSFET N-CH 55V 160A I4PAC
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| IXTH10N100D |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO247
Description: MOSFET N-CH 1000V 10A TO247
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Мінімальне замовлення: 30 шт
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| IXTH12N120 |
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Box
Description: MOSFET N-CH 1200V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Box
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Мінімальне замовлення: 30 шт
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| IXTH130N10T |
|
Виробник: IXYS
Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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| IXTH152N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 152A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 85V 152A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IXTH160N075T |
|
Виробник: IXYS
Description: MOSFET N-CH 75V 160A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 75V 160A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IXTH16P20 |
|
Виробник: IXYS
Description: MOSFET P-CH 200V 16A TO-247
Description: MOSFET P-CH 200V 16A TO-247
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Мінімальне замовлення: 30 шт
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| IXTH180N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 180A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 85V 180A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IXTH180N10T |
|
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 1870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 607.53 грн |
| 30+ | 341.41 грн |
| 120+ | 287.92 грн |
| 510+ | 233.42 грн |
| 1020+ | 224.33 грн |
| IXTH182N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 182A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 55V 182A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IXTH200N075T |
|
Виробник: IXYS
Description: MOSFET N-CH 75V 200A TO-247
Description: MOSFET N-CH 75V 200A TO-247
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| IXTH200N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 200A TO247
Description: MOSFET N-CH 85V 200A TO247
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| IXTH20N50D |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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Мінімальне замовлення: 300 шт
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| IXTH220N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 220A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 55V 220A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IXTH220N075T |
Виробник: IXYS
Description: MOSFET N-CH 75V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Description: MOSFET N-CH 75V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
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| IXTH22N50P |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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| IXTH230N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 230A TO247
Description: MOSFET N-CH 85V 230A TO247
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| IXTH240N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 240A TO247
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Description: MOSFET N-CH 55V 240A TO247
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
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| IXTH250N075T |
Виробник: IXYS
Description: MOSFET N-CH 75V 250A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 75V 250A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IXTH280N055T |
Виробник: IXYS
Description: MOSFET N-CH 55V 280A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 55V 280A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
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| IXTH36P10 |
|
Виробник: IXYS
Description: MOSFET P-CH 100V 36A TO-247
Description: MOSFET P-CH 100V 36A TO-247
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Мінімальне замовлення: 30 шт
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| IXTH3N120 |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 1200V 3A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Мінімальне замовлення: 300 шт
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| IXTH88N15 |
|
Виробник: IXYS
Description: MOSFET N-CH 150V 88A TO-247AD
Description: MOSFET N-CH 150V 88A TO-247AD
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Мінімальне замовлення: 60 шт
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| IXTK120N20P |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 120A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 200V 120A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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Мінімальне замовлення: 300 шт
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| IXTK140N20P |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 200V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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| IXTK17N120L |
Виробник: IXYS
Description: MOSFET N-CH 1200V 17A TO264
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Description: MOSFET N-CH 1200V 17A TO264
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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| IXTK250N10 |
Виробник: IXYS
Description: MOSFET N-CH 100V 250A TO264
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Box
Description: MOSFET N-CH 100V 250A TO264
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Box
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Мінімальне замовлення: 25 шт
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| IXTL2x180N10T |
|
Виробник: IXYS
Description: MOSFET 2N-CH 100V 100A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Description: MOSFET 2N-CH 100V 100A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
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Мінімальне замовлення: 300 шт
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| IXTL2X200N085T |
|
Виробник: IXYS
Description: MOSFET 2N-CH 85V 112A I5-PAK
Description: MOSFET 2N-CH 85V 112A I5-PAK
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| IXTL2X220N075T |
Виробник: IXYS
Description: MOSFET 2N-CH 75V 120A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Description: MOSFET 2N-CH 75V 120A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
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