Продукція > IXYS > Всі товари виробника IXYS (15964) > Сторінка 247 з 267

Обрати Сторінку:   [  << Попередня Сторінка ]  1 26 52 78 104 130 156 182 208 234 242 243 244 245 246 247 248 249 250 251 252 260 267  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність Ціна без ПДВ
MDD255-18N1 IXYS MDD255-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику  од. на суму  грн.
MDD255-14N1 IXYS MDD255-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику  од. на суму  грн.
IXTP270N04T4 IXTP270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
2+256.17 грн
3+214.17 грн
10+189.62 грн
50+173.53 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI60-02A DSEI60-02A IXYS DSEI60-02A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W
Power dissipation: 150W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 0.88V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 191 шт:
термін постачання 14-30 дні (днів)
1+480.43 грн
3+402.09 грн
10+335.22 грн
30+334.37 грн
В кошику  од. на суму  грн.
DSEI2X61-10B DSEI2X61-10B IXYS DSEI2X61-10B.pdf Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
1+2517.92 грн
5+2335.53 грн
В кошику  од. на суму  грн.
DSEI120-06A DSEI120-06A IXYS DSEI120-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; Ifsm: 540A; TO247-2; tube; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 1.12V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
товару немає в наявності
В кошику  од. на суму  грн.
CLA16E1200PN CLA16E1200PN IXYS CLA16E1200PN.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
2+257.08 грн
10+131.21 грн
50+120.20 грн
100+115.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA380N036T4-7 IXTA380N036T4-7 IXYS IXTA380N036T4-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
PM1204S PM1204S IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
1+1112.19 грн
50+676.36 грн
В кошику  од. на суму  грн.
SK230NRP SK230NRP IXYS SK230.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: thyristor
Gate current: 30mA
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SK230RTP SK230RTP IXYS SK230.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: thyristor
Gate current: 30mA
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXYX50N170C IXYX50N170C IXYS IXYX50N170C.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
PLA110S PLA110S IXYS PLA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
1+515.07 грн
50+417.33 грн
В кошику  од. на суму  грн.
PLA110STR IXYS PLA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA100 LCA100 IXYS LCA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+575.24 грн
50+350.46 грн
250+281.04 грн
В кошику  од. на суму  грн.
LCA100L LCA100L IXYS LCA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+596.20 грн
50+363.15 грн
250+292.05 грн
В кошику  од. на суму  грн.
LCA100S LCA100S IXYS LCA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
2+400.20 грн
50+341.14 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
LCA100LS LCA100LS IXYS LCA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
2+435.76 грн
10+326.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DPJ50XS1800NA IXYS Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Kind of package: tube
Reverse recovery time: 30ns
Leakage current: 0.25mA
Max. off-state voltage: 1.8kV
Load current: 25A x2
Max. forward impulse current: 250A
Max. load current: 50A
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
IXTH4N150 IXTH4N150 IXYS IXTH4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA4N150HV IXTA4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTJ4N150 IXTJ4N150 IXYS IXTJ4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT4N150HV IXTT4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
FUO50-16N FUO50-16N IXYS FUO50-16N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
1+1542.47 грн
3+1314.63 грн
5+1247.76 грн
В кошику  од. на суму  грн.
IXFH20N80P IXFH20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 86nC
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
1+718.36 грн
10+492.67 грн
В кошику  од. на суму  грн.
IXFR20N80P IXFR20N80P IXYS IXFR20N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Drain current: 10A
Power dissipation: 160W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 570mΩ
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+765.77 грн
3+638.27 грн
10+563.78 грн
30+507.06 грн
В кошику  од. на суму  грн.
IXFT20N80P IXFT20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
товару немає в наявності
В кошику  од. на суму  грн.
IXFR44N50Q3 IXFR44N50Q3 IXYS IXFR44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR48N60Q3 IXFR48N60Q3 IXYS IXFR48N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1T600N04T2MMIX1T600N04T2
MMIX1T600N04T2MMIX1T600N04T2
 MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+2847.93 грн
3+2338.91 грн
10+2101.04 грн
В кошику  од. на суму  грн.
DSS2X121-0045B DSS2X121-0045B IXYS DSS2x121-0045B.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
DSS2X101-02A DSS2X101-02A IXYS DSS2x101-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X101-015A DSS2X101-015A IXYS DSS2X101-015A.pdf description Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X61-01A DSS2X61-01A IXYS DSS2x61-01A.pdf Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X41-01A DSS2X41-01A IXYS DSS2x41-01A.pdf description Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X61-0045A DSS2X61-0045A IXYS DSS2x61-0045A.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X111-008A DSS2X111-008A IXYS DSS2x111-008A.pdf Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS20-0015B DSS20-0015B IXYS DSS20-0015B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
DSS2X160-0045A DSS2X160-0045A IXYS DSS2X160-0045A.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
DSS2X81-0045B DSS2X81-0045B IXYS DSS2x81-0045B.pdf Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
IXTN110N20L2 IXTN110N20L2 IXYS IXTN110N20L2.pdf Category: Transistor modules
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 420ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTK110N20L2 IXTK110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTX110N20L2 IXTX110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
2+348.24 грн
10+238.72 грн
25+220.94 грн
50+208.24 грн
100+196.39 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH3N100P IXTH3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
1+477.69 грн
10+351.30 грн
30+274.27 грн
В кошику  од. на суму  грн.
IXTA3N100D2 IXTA3N100D2 IXYS IXTA(P)3N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA3N100D2HV IXTA3N100D2HV IXYS IXTA3N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA3N100P IXTA3N100P IXYS IXTA(H,P)3N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP3N100P IXTP3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP18N65X2M IXFP18N65X2M IXYS IXFP18N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N65X2 IXFA18N65X2 IXYS IXF_18N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH18N65X2 IXFH18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP18N65X2 IXFP18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ76N25T IXTQ76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
2+433.02 грн
10+292.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PM1204 PM1204 IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+991.85 грн
10+673.82 грн
50+560.39 грн
100+540.07 грн
В кошику  од. на суму  грн.
IXFH26N50 IXFH26N50 IXYS 91525.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH26N50P IXFH26N50P IXYS IXFH26N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTY02N120P IXTY02N120P IXYS IXTP(Y)02N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Kind of package: tube
On-state resistance: 75Ω
Reverse recovery time: 1.6µs
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP02N120P IXTP02N120P IXYS IXTP(Y)02N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Kind of package: tube
On-state resistance: 75Ω
Reverse recovery time: 1.6µs
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFH40N85X IXFH40N85X IXYS IXF_40N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
MDD255-18N1 MDD255-18N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику  од. на суму  грн.
MDD255-14N1 MDD255-14N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику  од. на суму  грн.
IXTP270N04T4 IXTH(P)270N04T4.pdf
IXTP270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+256.17 грн
3+214.17 грн
10+189.62 грн
50+173.53 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI60-02A description DSEI60-02A.pdf
DSEI60-02A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W
Power dissipation: 150W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 0.88V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 191 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+480.43 грн
3+402.09 грн
10+335.22 грн
30+334.37 грн
В кошику  од. на суму  грн.
DSEI2X61-10B DSEI2X61-10B.pdf
DSEI2X61-10B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Kind of package: tube
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2517.92 грн
5+2335.53 грн
В кошику  од. на суму  грн.
DSEI120-06A DSEI120-06A.pdf
DSEI120-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; Ifsm: 540A; TO247-2; tube; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Max. forward voltage: 1.12V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
товару немає в наявності
В кошику  од. на суму  грн.
CLA16E1200PN CLA16E1200PN.pdf
CLA16E1200PN
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+257.08 грн
10+131.21 грн
50+120.20 грн
100+115.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA380N036T4-7 IXTA380N036T4-7.pdf
IXTA380N036T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
PM1204S PM1204.pdf
PM1204S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1112.19 грн
50+676.36 грн
В кошику  од. на суму  грн.
SK230NRP SK230.pdf
SK230NRP
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: thyristor
Gate current: 30mA
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
SK230RTP SK230.pdf
SK230RTP
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: thyristor
Gate current: 30mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXYX50N170C IXYX50N170C.pdf
IXYX50N170C
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
PLA110S PLA110.pdf
PLA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+515.07 грн
50+417.33 грн
В кошику  од. на суму  грн.
PLA110STR PLA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA100 LCA100.pdf
LCA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+575.24 грн
50+350.46 грн
250+281.04 грн
В кошику  од. на суму  грн.
LCA100L LCA100L.pdf
LCA100L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+596.20 грн
50+363.15 грн
250+292.05 грн
В кошику  од. на суму  грн.
LCA100S LCA100.pdf
LCA100S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+400.20 грн
50+341.14 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
LCA100LS LCA100L.pdf
LCA100LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+435.76 грн
10+326.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DPJ50XS1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Kind of package: tube
Reverse recovery time: 30ns
Leakage current: 0.25mA
Max. off-state voltage: 1.8kV
Load current: 25A x2
Max. forward impulse current: 250A
Max. load current: 50A
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
IXTH4N150 IXTH4N150.pdf
IXTH4N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA4N150HV IXTA(T)4N150HV.pdf
IXTA4N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTJ4N150 IXTJ4N150.pdf
IXTJ4N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT4N150HV IXTA(T)4N150HV.pdf
IXTT4N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
FUO50-16N FUO50-16N.pdf
FUO50-16N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1542.47 грн
3+1314.63 грн
5+1247.76 грн
В кошику  од. на суму  грн.
IXFH20N80P IXFH(T,V)20N80P_S.pdf
IXFH20N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 86nC
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+718.36 грн
10+492.67 грн
В кошику  од. на суму  грн.
IXFR20N80P IXFR20N80P.pdf
IXFR20N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Drain current: 10A
Power dissipation: 160W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 570mΩ
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+765.77 грн
3+638.27 грн
10+563.78 грн
30+507.06 грн
В кошику  од. на суму  грн.
IXFT20N80P IXFH(T,V)20N80P_S.pdf
IXFT20N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
товару немає в наявності
В кошику  од. на суму  грн.
IXFR44N50Q3 IXFR44N50Q3.pdf
IXFR44N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR48N60Q3 IXFR48N60Q3.pdf
IXFR48N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2MMIX1T600N04T2
MMIX1T600N04T2MMIX1T600N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2847.93 грн
3+2338.91 грн
10+2101.04 грн
В кошику  од. на суму  грн.
DSS2X121-0045B description DSS2x121-0045B.pdf
DSS2X121-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
DSS2X101-02A DSS2x101-02A.pdf
DSS2X101-02A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X101-015A description DSS2X101-015A.pdf
DSS2X101-015A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X61-01A DSS2x61-01A.pdf
DSS2X61-01A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X41-01A description DSS2x41-01A.pdf
DSS2X41-01A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X61-0045A description DSS2x61-0045A.pdf
DSS2X61-0045A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X111-008A DSS2x111-008A.pdf
DSS2X111-008A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS20-0015B DSS20-0015B.pdf
DSS20-0015B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
DSS2X160-0045A DSS2X160-0045A.pdf
DSS2X160-0045A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
DSS2X81-0045B DSS2x81-0045B.pdf
DSS2X81-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
IXTN110N20L2 IXTN110N20L2.pdf
IXTN110N20L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 420ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTK110N20L2 IXT_110N20L2.pdf
IXTK110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTX110N20L2 IXT_110N20L2.pdf
IXTX110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+348.24 грн
10+238.72 грн
25+220.94 грн
50+208.24 грн
100+196.39 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH3N100P IXTA(H,P)3N100P.pdf
IXTH3N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+477.69 грн
10+351.30 грн
30+274.27 грн
В кошику  од. на суму  грн.
IXTA3N100D2 IXTA(P)3N100D2.pdf
IXTA3N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA3N100D2HV IXTA3N100D2HV.pdf
IXTA3N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA3N100P IXTA(H,P)3N100P.pdf
IXTA3N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP3N100P IXTA(H,P)3N100P.pdf
IXTP3N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP18N65X2M IXFP18N65X2M.pdf
IXFP18N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N65X2 IXF_18N65X2.pdf
IXFA18N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH18N65X2 IXF_18N65X2.pdf
IXFH18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP18N65X2 IXF_18N65X2.pdf
IXFP18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTQ76N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+433.02 грн
10+292.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PM1204 PM1204.pdf
PM1204
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+991.85 грн
10+673.82 грн
50+560.39 грн
100+540.07 грн
В кошику  од. на суму  грн.
IXFH26N50 91525.pdf
IXFH26N50
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH26N50P IXFH26N50P.pdf
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTY02N120P IXTP(Y)02N120P.pdf
IXTY02N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Kind of package: tube
On-state resistance: 75Ω
Reverse recovery time: 1.6µs
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTP02N120P IXTP(Y)02N120P.pdf
IXTP02N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Kind of package: tube
On-state resistance: 75Ω
Reverse recovery time: 1.6µs
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFH40N85X IXF_40N85X_HV.pdf
IXFH40N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 26 52 78 104 130 156 182 208 234 242 243 244 245 246 247 248 249 250 251 252 260 267  [ Наступна Сторінка >> ]