| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MDD255-12N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 1.2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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MDD255-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 1.6kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MDD255-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 2.2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MDD255-20N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MDD255-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.08V Load current: 270A Max. load current: 450A Max. forward impulse current: 9.8kA Max. off-state voltage: 1.8kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD255-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.08V Load current: 270A Max. load current: 450A Max. forward impulse current: 9.8kA Max. off-state voltage: 1.4kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXTP270N04T4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO220AB On-state resistance: 2.4mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 48ns Features of semiconductor devices: thrench gate power mosfet |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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DSEI60-02A | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W Mounting: THT Case: TO247-2 Max. forward impulse current: 540A Max. forward voltage: 0.88V Power dissipation: 150W Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 200V Load current: 69A Kind of package: tube Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns |
на замовлення 191 шт: термін постачання 14-30 дні (днів) |
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DSEI2X61-10B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 540A Max. forward voltage: 2.3V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1kV Electrical mounting: screw Load current: 60A x2 Max. load current: 120A Kind of package: tube Semiconductor structure: double independent |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
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DSEI120-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 126A; Ifsm: 540A; TO247-2; tube; 357W Mounting: THT Case: TO247-2 Max. forward impulse current: 540A Max. forward voltage: 1.12V Power dissipation: 357W Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Load current: 126A Kind of package: tube Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CLA16E1200PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT Mounting: THT Max. forward impulse current: 195A Gate current: 50mA Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 16A Kind of package: tube Case: TO220FP Type of thyristor: standard |
на замовлення 113 шт: термін постачання 14-30 дні (днів) |
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IXTA380N036T4-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 36V Drain current: 380A Power dissipation: 480W Case: TO263-7 On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement Reverse recovery time: 54ns Gate charge: 260nC Features of semiconductor devices: thrench gate power mosfet Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PM1204S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Case: DIP6 Mounting: SMT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Max. operating current: 0.5A Control current max.: 100mA |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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SK230NRP | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD Case: TO263 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 19A Max. load current: 30A Type of thyristor: standard Gate current: 30mA |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||
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SK230RTP | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT Case: TO220-3 Mounting: THT Max. off-state voltage: 1.2kV Load current: 19A Max. load current: 30A Type of thyristor: standard Gate current: 30mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||
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IXYX50N170C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™ Case: PLUS247™ Type of transistor: IGBT Technology: XPT™ Turn-on time: 62ns Gate charge: 260nC Turn-off time: 396ns Features of semiconductor devices: high voltage Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 460A Power dissipation: 1.5kW Mounting: THT Collector-emitter voltage: 1.7kV Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PLA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 95 шт: термін постачання 14-30 дні (днів) |
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| PLA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
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LCA100 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP6 Max. operating current: 120mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 25Ω Type of relay: solid state Mounting: THT |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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LCA100L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP6 Max. operating current: 120mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 25Ω Type of relay: solid state Mounting: THT |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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LCA100S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP6 Max. operating current: 120mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 25Ω Type of relay: solid state Mounting: SMT |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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LCA100LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP6 Max. operating current: 120mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 25Ω Type of relay: solid state Mounting: SMT |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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| DPJ50XS1800NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw Reverse recovery time: 30ns Max. forward impulse current: 250A Type of semiconductor module: diode Technology: FRED Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 25A x2 Max. load current: 50A Kind of package: tube Semiconductor structure: double independent Case: SOT227B |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||||
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IXTH4N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Power dissipation: 280W Case: TO247-3 On-state resistance: 6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 900ns Gate charge: 44.5nC Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTA4N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Power dissipation: 280W Case: TO263 On-state resistance: 6Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 900ns Gate charge: 44.5nC Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTJ4N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 110W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 900ns Gate charge: 44.5nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTT4N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Power dissipation: 280W Case: TO268HV On-state resistance: 6Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 900ns Gate charge: 44.5nC Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FUO50-16N | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A Max. off-state voltage: 1.6kV Load current: 50A Case: ISOPLUS i4-pac™ x024a Max. forward voltage: 1.04V Max. forward impulse current: 270A Electrical mounting: THT Type of bridge rectifier: three-phase |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXFH20N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Case: TO247-3 On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 500W Gate charge: 86nC |
на замовлення 245 шт: термін постачання 14-30 дні (днів) |
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IXFR20N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™ Case: ISOPLUS247™ Drain current: 10A Power dissipation: 160W Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 86nC On-state resistance: 570mΩ |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXFT20N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268 Case: TO268 Drain current: 20A Power dissipation: 500W Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: tube Polarisation: unipolar Gate charge: 86nC On-state resistance: 0.52Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFR44N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 154mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFR48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Gate charge: 0.14µC On-state resistance: 154mΩ Power dissipation: 500W Case: ISOPLUS247™ Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MMIX1T600N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W Case: SMPD Kind of channel: enhancement Mounting: SMD Technology: GigaMOS™; TrenchT2™ Type of transistor: N-MOSFET Polarisation: unipolar Reverse recovery time: 100ns Gate charge: 590nC On-state resistance: 1.3mΩ Drain current: 600A Power dissipation: 830W Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 2kA |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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DSS2X121-0045B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.59V Max. off-state voltage: 45V Load current: 120A x2 Max. load current: 240A Max. forward impulse current: 1.6kA Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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DSS2X101-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.84V Max. off-state voltage: 200V Load current: 100A x2 Max. load current: 200A Max. forward impulse current: 1.4kA Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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DSS2X101-015A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.99V Max. off-state voltage: 150V Load current: 100A x2 Max. load current: 200A Max. forward impulse current: 1.4kA Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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DSS2X61-01A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.74V Max. off-state voltage: 0.1kV Load current: 60A x2 Max. load current: 120A Max. forward impulse current: 700A Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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DSS2X41-01A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.7V Max. off-state voltage: 0.1kV Load current: 40A x2 Max. load current: 80A Max. forward impulse current: 0.45kA Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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DSS2X61-0045A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.65V Max. off-state voltage: 45V Load current: 60A x2 Max. load current: 120A Max. forward impulse current: 0.8kA Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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DSS2X111-008A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.72V Max. off-state voltage: 80V Load current: 110A x2 Max. load current: 220A Max. forward impulse current: 1.4kA Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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DSS20-0015B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220AC Max. forward voltage: 0.33V Power dissipation: 90W Max. off-state voltage: 15V Load current: 20A Max. forward impulse current: 0.3kA Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||
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DSS2X160-0045A | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.73V Max. off-state voltage: 45V Load current: 160A x2 Max. load current: 320A Max. forward impulse current: 1.6kA Semiconductor structure: common cathode; double Type of semiconductor module: diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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DSS2X81-0045B | IXYS |
Category: Diode modules Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw Electrical mounting: screw Kind of package: tube Features of semiconductor devices: Schottky Mechanical mounting: screw Case: SOT227B Max. forward voltage: 0.63V Max. off-state voltage: 45V Load current: 80A x2 Max. load current: 160A Max. forward impulse current: 0.8kA Semiconductor structure: double independent Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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IXTN110N20L2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 100A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 24mΩ Pulsed drain current: 275A Power dissipation: 735W Technology: Linear L2™ Kind of channel: enhancement Gate charge: 500nC Reverse recovery time: 420ns Gate-source voltage: ±30V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXTK110N20L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTX110N20L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 420ns Technology: Linear L2™ Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTP3N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 5.5Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 17ns Gate charge: 1.02µC |
на замовлення 149 шт: термін постачання 14-30 дні (днів) |
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IXTH3N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO247-3 Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 820ns Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTA3N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 6Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Gate charge: 1.02µC Reverse recovery time: 17ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXTA3N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263HV On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 17ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTA3N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 36nC Features of semiconductor devices: standard power mosfet Reverse recovery time: 820ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXTP3N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 36nC Features of semiconductor devices: standard power mosfet Reverse recovery time: 820ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||
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IXFP18N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 135ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFA18N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 135ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFH18N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 135ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||
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IXFP18N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 135ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXTQ76N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO3P On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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PM1204 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Case: DIP6 Mounting: THT Type of relay: solid state Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Max. operating current: 0.5A Control current max.: 100mA |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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IXFH26N50 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 135nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. |
| MDD255-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11446.18 грн |
| 3+ | 9616.35 грн |
| 6+ | 9399.44 грн |
| MDD255-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику
од. на суму грн.
| MDD255-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику
од. на суму грн.
| MDD255-20N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику
од. на суму грн.
| MDD255-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику
од. на суму грн.
| MDD255-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику
од. на суму грн.
| IXTP270N04T4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 48ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.64 грн |
| 3+ | 207.87 грн |
| 10+ | 184.04 грн |
| 50+ | 168.43 грн |
| DSEI60-02A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 0.88V
Power dissipation: 150W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 69A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 0.88V
Power dissipation: 150W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 69A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 191 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 466.31 грн |
| 3+ | 390.27 грн |
| 10+ | 325.37 грн |
| 30+ | 324.54 грн |
| DSEI2X61-10B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 540A
Max. forward voltage: 2.3V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 60A x2
Max. load current: 120A
Kind of package: tube
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 540A
Max. forward voltage: 2.3V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 60A x2
Max. load current: 120A
Kind of package: tube
Semiconductor structure: double independent
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2443.90 грн |
| 5+ | 2266.88 грн |
| DSEI120-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; Ifsm: 540A; TO247-2; tube; 357W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 1.12V
Power dissipation: 357W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 126A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; Ifsm: 540A; TO247-2; tube; 357W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 1.12V
Power dissipation: 357W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 126A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
товару немає в наявності
В кошику
од. на суму грн.
| CLA16E1200PN |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT
Mounting: THT
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT
Mounting: THT
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.18 грн |
| 8+ | 123.24 грн |
| 21+ | 116.67 грн |
| IXTA380N036T4-7 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| PM1204S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1079.49 грн |
| 50+ | 656.48 грн |
| SK230NRP |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: standard
Gate current: 30mA
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: standard
Gate current: 30mA
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
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| SK230RTP |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: standard
Gate current: 30mA
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Type of thyristor: standard
Gate current: 30mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IXYX50N170C |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
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В кошику
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| PLA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 499.93 грн |
| 50+ | 405.06 грн |
| PLA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LCA100 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 558.33 грн |
| 50+ | 340.15 грн |
| 250+ | 272.78 грн |
| LCA100L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 578.68 грн |
| 50+ | 352.48 грн |
| 250+ | 283.46 грн |
| LCA100S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 388.44 грн |
| 50+ | 331.12 грн |
| LCA100LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 422.95 грн |
| 10+ | 317.15 грн |
| DPJ50XS1800NA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Reverse recovery time: 30ns
Max. forward impulse current: 250A
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Reverse recovery time: 30ns
Max. forward impulse current: 250A
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
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| IXTH4N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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| IXTA4N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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| IXTJ4N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
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| IXTT4N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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| FUO50-16N |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Max. off-state voltage: 1.6kV
Load current: 50A
Case: ISOPLUS i4-pac™ x024a
Max. forward voltage: 1.04V
Max. forward impulse current: 270A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Max. off-state voltage: 1.6kV
Load current: 50A
Case: ISOPLUS i4-pac™ x024a
Max. forward voltage: 1.04V
Max. forward impulse current: 270A
Electrical mounting: THT
Type of bridge rectifier: three-phase
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1712.15 грн |
| 3+ | 1449.35 грн |
| 5+ | 1353.22 грн |
| 10+ | 1343.36 грн |
| IXFH20N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 86nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 86nC
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 697.25 грн |
| 10+ | 478.19 грн |
| IXFR20N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Drain current: 10A
Power dissipation: 160W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 570mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Drain current: 10A
Power dissipation: 160W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 570mΩ
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 743.26 грн |
| 3+ | 619.51 грн |
| 10+ | 547.21 грн |
| 30+ | 492.16 грн |
| IXFT20N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
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| IXFR44N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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| IXFR48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| MMIX1T600N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2764.21 грн |
| 3+ | 2270.16 грн |
| 10+ | 2039.28 грн |
| DSS2X121-0045B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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| DSS2X101-02A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
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| DSS2X101-015A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
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| DSS2X61-01A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
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| DSS2X41-01A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
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| DSS2X61-0045A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
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| DSS2X111-008A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
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| DSS20-0015B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 8000 шт
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од. на суму грн.
| DSS2X160-0045A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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| DSS2X81-0045B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
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| IXTN110N20L2 |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 100A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 275A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 500nC
Reverse recovery time: 420ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 100A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 275A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 500nC
Reverse recovery time: 420ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| IXTK110N20L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
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| IXTX110N20L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Gate-source voltage: ±20V
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| IXTP3N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 384.02 грн |
| 6+ | 158.57 грн |
| 17+ | 149.54 грн |
| IXTH3N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 820ns
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 820ns
Features of semiconductor devices: standard power mosfet
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| IXTA3N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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| IXTA3N100D2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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| IXTA3N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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| IXTP3N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXFP18N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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| IXFA18N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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| IXFH18N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXFP18N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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В кошику
од. на суму грн.
| IXTQ76N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 420.29 грн |
| 10+ | 284.28 грн |
| PM1204 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 962.70 грн |
| 10+ | 654.02 грн |
| 50+ | 543.92 грн |
| 100+ | 524.20 грн |
| IXFH26N50 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику
од. на суму грн.