| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DCG35C1200HR | IXYS |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube Type of diode: Schottky rectifying Case: ISO247™ Mounting: THT Max. off-state voltage: 1.2kV Load current: 18A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward voltage: 2.2V Max. forward impulse current: 1kA Kind of package: tube Technology: SiC |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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DHG30I1200HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W Type of diode: rectifying Case: TO247-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 1.95V Max. forward impulse current: 200A Kind of package: tube Technology: Sonic FRD™ Reverse recovery time: 200ns Power dissipation: 180W |
на замовлення 45 шт: термін постачання 14-30 дні (днів) |
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DPF60C200HJ | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™ Type of diode: rectifying Case: ISOPLUS247™ Mounting: THT Max. off-state voltage: 200V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward voltage: 0.88V Max. forward impulse current: 560A Kind of package: tube Technology: HiPerFRED™ 2nd Gen Reverse recovery time: 35ns |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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DPG30C200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W Type of diode: rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward voltage: 1.25V Max. forward impulse current: 0.24kA Kind of package: tube Technology: HiPerFRED™ 2nd Gen Reverse recovery time: 35ns Power dissipation: 90W |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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IXA12IF1200HB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Technology: Planar; Sonic FRD™; XPT™ Type of transistor: IGBT Gate charge: 27nC Turn-on time: 110ns Turn-off time: 350ns Power dissipation: 85W Collector current: 13A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 1.2kV |
на замовлення 258 шт: термін постачання 14-30 дні (днів) |
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IXTP18P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB Case: TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Gate charge: 39nC Reverse recovery time: 62ns On-state resistance: 0.12Ω Gate-source voltage: ±15V Power dissipation: 83W Kind of channel: enhancement |
на замовлення 341 шт: термін постачання 14-30 дні (днів) |
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| MCO600-22io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2.2kV Load current: 600A Case: Y1 Max. forward voltage: 1.34V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MCO600-20io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V Type of semiconductor module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2kV Load current: 600A Case: Y1 Max. forward voltage: 1.34V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXFN100N50P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 75A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 250A Power dissipation: 1.04kW Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LF21844NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A Operating temperature: -40...125°C Kind of package: reel; tape Case: SO14 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Output current: -2.3...1.9A Number of channels: 2 Supply voltage: 10...20V Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC1973Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC Case: SIP4 On-state resistance: 5Ω Mounting: THT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Max. operating current: 0.35mA Turn-off time: 3ms Turn-on time: 5ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Switched voltage: max. 400V AC Insulation voltage: 2.5kV Manufacturer series: OptoMOS Relay variant: 1-phase |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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CPC1302G | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V Collector-emitter voltage: 350V CTR@If: 1000-8000%@1mA Insulation voltage: 3.75kV Kind of output: Darlington Case: DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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CPC1302GSTR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V Collector-emitter voltage: 350V CTR@If: 1000-8000%@1mA Insulation voltage: 3.75kV Kind of output: Darlington Type of optocoupler: optocoupler Mounting: SMD Turn-off time: 80µs Turn-on time: 1µs Trigger current: 50mA Slew rate: 0.25V/μs Number of channels: 2 Max. off-state voltage: 5V |
на замовлення 76 шт: термін постачання 14-30 дні (днів) |
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CLA60PD1200NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: SOT227B Max. forward voltage: 1.09V Electrical mounting: screw Max. load current: 94A Mechanical mounting: screw Max. forward impulse current: 935A Kind of package: bulk Gate current: 40/80mA Threshold on-voltage: 0.79V |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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CLA100PD1200NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 100A Case: SOT227B Max. forward voltage: 1.21V Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw Max. forward impulse current: 1.5kA Kind of package: bulk Gate current: 40/80mA Threshold on-voltage: 0.83V |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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CLA110MB1200NA | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V Type of semiconductor module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.2kV Load current: 50A Case: SOT227B Max. forward voltage: 1.04V Electrical mounting: screw Mechanical mounting: screw Max. forward impulse current: 935A Kind of package: bulk Gate current: 40/80mA |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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MMO62-12IO6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V Type of semiconductor module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.2kV Load current: 30A Case: SOT227B Max. forward voltage: 1.29V Electrical mounting: screw Mechanical mounting: screw Max. forward impulse current: 0.4kA Kind of package: bulk Gate current: 100mA |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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IXGN200N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Technology: GenX3™; PT Collector current: 200A Pulsed collector current: 1.2kA Power dissipation: 830W Gate-emitter voltage: ±20V |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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DSEI2X61-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 71A x2 Case: SOT227B Max. forward voltage: 0.88V Electrical mounting: screw Max. load current: 142A Mechanical mounting: screw Max. forward impulse current: 0.95kA Kind of package: tube |
на замовлення 136 шт: термін постачання 14-30 дні (днів) |
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DSEP2X91-03A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 90A x2 Case: SOT227B Max. forward voltage: 1.54V Electrical mounting: screw Max. load current: 180A Mechanical mounting: screw Technology: HiPerFRED™ Max. forward impulse current: 1kA Kind of package: tube |
на замовлення 63 шт: термін постачання 14-30 дні (днів) |
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DSEP2X61-03A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 60A x2 Case: SOT227B Max. forward voltage: 1.11V Electrical mounting: screw Max. load current: 120A Mechanical mounting: screw Technology: HiPerFRED™ Max. forward impulse current: 0.6kA Kind of package: tube |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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| DCG35C1200HR |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Type of diode: Schottky rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 2.2V
Max. forward impulse current: 1kA
Kind of package: tube
Technology: SiC
на замовлення 60 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1848.00 грн |
| 3+ | 1653.75 грн |
| DHG30I1200HA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.95V
Max. forward impulse current: 200A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 180W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Type of diode: rectifying
Case: TO247-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.95V
Max. forward impulse current: 200A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Power dissipation: 180W
на замовлення 45 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 318.81 грн |
| 10+ | 276.75 грн |
| 20+ | 239.74 грн |
| DPF60C200HJ |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Type of diode: rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.88V
Max. forward impulse current: 560A
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
на замовлення 38 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 273.58 грн |
| 3+ | 228.80 грн |
| 10+ | 202.72 грн |
| 30+ | 192.63 грн |
| DPG30C200HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 90W
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Reverse recovery time: 35ns
Power dissipation: 90W
на замовлення 24 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 269.95 грн |
| 10+ | 190.95 грн |
| IXA12IF1200HB |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 27nC
Turn-on time: 110ns
Turn-off time: 350ns
Power dissipation: 85W
Collector current: 13A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 27nC
Turn-on time: 110ns
Turn-off time: 350ns
Power dissipation: 85W
Collector current: 13A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
на замовлення 258 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 364.16 грн |
| 10+ | 278.43 грн |
| 30+ | 238.89 грн |
| 120+ | 210.29 грн |
| IXTP18P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
на замовлення 341 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.38 грн |
| 10+ | 181.69 грн |
| 25+ | 148.05 грн |
| 50+ | 117.76 грн |
| 100+ | 94.21 грн |
| MCO600-22io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MCO600-20io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 600A; Y1; Ufmax: 1.34V
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 600A
Case: Y1
Max. forward voltage: 1.34V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| IXFN100N50P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| LF21844NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
В кошику
од. на суму грн.
| CPC1973Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase
на замовлення 44 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 376.85 грн |
| 10+ | 307.03 грн |
| 25+ | 279.27 грн |
| CPC1302G |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Case: DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Case: DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
на замовлення 176 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 186.61 грн |
| 50+ | 122.81 грн |
| 100+ | 111.04 грн |
| CPC1302GSTR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-off time: 80µs
Turn-on time: 1µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; Uce: 350V
Collector-emitter voltage: 350V
CTR@If: 1000-8000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-off time: 80µs
Turn-on time: 1µs
Trigger current: 50mA
Slew rate: 0.25V/μs
Number of channels: 2
Max. off-state voltage: 5V
на замовлення 76 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 215.60 грн |
| 10+ | 146.36 грн |
| CLA60PD1200NA |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1962.14 грн |
| CLA100PD1200NA |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.83V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 100A
Case: SOT227B
Max. forward voltage: 1.21V
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.83V
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2569.99 грн |
| CLA110MB1200NA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 50A
Case: SOT227B
Max. forward voltage: 1.04V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 935A
Kind of package: bulk
Gate current: 40/80mA
на замовлення 57 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1530.94 грн |
| MMO62-12IO6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 0.4kA
Kind of package: bulk
Gate current: 100mA
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 0.4kA
Kind of package: bulk
Gate current: 100mA
на замовлення 34 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1962.14 грн |
| IXGN200N60B3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 830W
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; PT
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 830W
Gate-emitter voltage: ±20V
на замовлення 16 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3581.86 грн |
| DSEI2X61-02A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Max. load current: 142A
Mechanical mounting: screw
Max. forward impulse current: 0.95kA
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 71Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 71A x2
Case: SOT227B
Max. forward voltage: 0.88V
Electrical mounting: screw
Max. load current: 142A
Mechanical mounting: screw
Max. forward impulse current: 0.95kA
Kind of package: tube
на замовлення 136 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2040.95 грн |
| 10+ | 1741.24 грн |
| DSEP2X91-03A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Electrical mounting: screw
Max. load current: 180A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 1kA
Kind of package: tube
на замовлення 63 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2631.59 грн |
| DSEP2X61-03A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 0.6kA
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Technology: HiPerFRED™
Max. forward impulse current: 0.6kA
Kind of package: tube
на замовлення 69 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2140.60 грн |