Продукція > IXYS > Всі товари виробника IXYS (16263) > Сторінка 247 з 272

Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns

Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 2A
Power dissipation: 520W
Case: TO247HV
On-state resistance: 21Ω
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns

Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. forward impulse current: 340A
Power dissipation: 85W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; Ifsm: 410A; ISOPLUS247™; tube
Mounting: THT
Max. forward impulse current: 410A
Max. forward voltage: 1.23V
Power dissipation: 165W
Max. off-state voltage: 1.6kV
Load current: 45A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS247™
Type of diode: rectifying

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED

Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Technology: GenX3™; PT
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 202ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 12A
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 20.4nC

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA

Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA

Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA

Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 450V DC
Power dissipation: 40W
Operating current: 2...100mA

Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 1.07µs
Gate-emitter voltage: ±20V
Collector current: 42A
Collector-emitter voltage: 1.7kV
Power dissipation: 360W
Gate charge: 188nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 300A
Type of transistor: IGBT
Turn-on time: 224ns
Kind of package: tube

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 150mA
Max. operating current: 5A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: i4-pac
Body dimensions: 20.88x19.91x5.03mm
Switching method: zero voltage switching
Insulation voltage: 2.5kV
Operating temperature: -40...85°C

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP8
Max. operating current: 250mA
Control current max.: 50mA

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 25ms
Switched voltage: max. 100V AC; max. 100V DC
Case: ISOPLUS264™
Max. operating current: 5250mA
Turn-off time: 10ms
Control current max.: 100mA
On-state resistance: 0.1Ω

Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 600V DC
Case: SIP4
Max. operating current: 0.5A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 6Ω

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 750mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2.3Ω
Mounting: THT
Case: i4-pac
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 600V AC; max. 600V DC
Case: i4-pac
Max. operating current: 1.25A
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 1Ω

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.4A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.75Ω
Mounting: THT
Case: ISOPLUS264™
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns

Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement

Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube

Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw

Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A

Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV

Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. load current: 630A
Max. forward impulse current: 10kA
Load current: 400A

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: common anode; double
Case: TO240AA
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.85V
Type of semiconductor module: diode
Mechanical mounting: screw

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw

Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Case: V1-A-Pack
Type of bridge rectifier: three-phase
Max. forward impulse current: 350A
Max. forward voltage: 0.83V
Version: module
Mechanical mounting: screw
Leads: connectors
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors
Load current: 60A
Leads dimensions: 2x0.5mm

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 140A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode

Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw

Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B

Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. forward impulse current: 8.4kA
Max. forward voltage: 1.4V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 270A
Max. load current: 450A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 182nC
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; Ifsm: 540A; TO247-2; tube; 150W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 0.88V
Power dissipation: 150W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 69A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns

Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 540A
Max. forward voltage: 2.3V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1kV
Electrical mounting: screw
Load current: 60A x2
Max. load current: 120A
Kind of package: tube
Semiconductor structure: double independent

Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; Ifsm: 540A; TO247-2; tube; 357W
Mounting: THT
Case: TO247-2
Max. forward impulse current: 540A
Max. forward voltage: 1.12V
Power dissipation: 357W
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 126A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns

Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT
Mounting: THT
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube

Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C

Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Mounting: SMD
Gate current: 30mA
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Case: TO263
Type of thyristor: standard

Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Mounting: THT
Gate current: 30mA
Max. off-state voltage: 1.2kV
Load current: 19A
Max. load current: 30A
Case: TO220-3
Type of thyristor: standard

Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube