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IXFX26N90 IXFX26N90 IXYS littelfuse-discrete-mosfets-ixf-26n90-datasheet?assetguid=d1a80220-3b82-4bab-9cf6-3581a5179ab5 Description: MOSFET N-CH 900V 26A PLUS 247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
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 Мінімальне замовлення: 300 шт
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IXFX27N80Q IXFX27N80Q IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-27N80Q-Datasheet.PDF?assetguid=8A073D63-78D0-4DED-AF8D-5593575C3C3C Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
на замовлення 745 шт:
термін постачання 21-31 дні (днів)
1+1796.24 грн
30+1117.64 грн
120+1064.42 грн
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IXFX30N100Q2 IXFX30N100Q2 IXYS IXF%28K%2CX%2930N100Q2.pdf Description: MOSFET N-CH 1000V 30A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFX38N80Q2 IXFX38N80Q2 IXYS IXF%28K%2CN%2CX%2938N80Q2.pdf Description: MOSFET N-CH 800V 38A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFX44N55Q IXFX44N55Q IXYS IXF(K,X)44N55Q.pdf Description: MOSFET N-CH 550V 44A PLUS247
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IXFX48N50Q IXFX48N50Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4_n50q_datasheet.pdf.pdf Description: MOSFET N-CH 500V 48A PLUS247-3
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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 Мінімальне замовлення: 30 шт
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IXFX52N60Q2 IXFX52N60Q2 IXYS IXF(K,X)52N60Q2.pdf Description: MOSFET N-CH 600V 52A PLUS247
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 Мінімальне замовлення: 30 шт
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IXFX60N55Q2 IXFX60N55Q2 IXYS DS98984B(IXFK-IXFX60N55Q2).pdf Description: MOSFET N-CH 550V 60A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFX66N50Q2 IXFX66N50Q2 IXYS IXF(K,X)66N50Q2.pdf Description: MOSFET N-CH 500V 66A PLUS247
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 Мінімальне замовлення: 30 шт
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IXFX73N30Q IXFX73N30Q IXYS 98870.pdf Description: MOSFET N-CH 300V 73A PLUS247
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IXFX88N20Q IXFX88N20Q IXYS Description: MOSFET N-CH 200V 88A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Box
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IXG611P1 IXG611P1 IXYS Description: IC DRIVER MOSF/IGBT 0.6A 8DIP
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 Мінімальне замовлення: 450 шт
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IXG611S1 IXG611S1 IXYS Description: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
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IXG611S1T/R IXG611S1T/R IXYS Description: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
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IXGA12N120A2 IXGA12N120A2 IXYS 6689af5f-fadf-40fd-b3af-0d2db78b6f7b.pdf Description: IGBT 1200V 24A 75W TO263
Gate Charge: 24 nC
Test Condition: 960V, 12A, 100Ohm, 15V
Switching Energy: 5.4mJ (off)
Td (on/off) @ 25°C: 15ns/680ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 75 W
Current - Collector Pulsed (Icm): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 24 A
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IXGA16N60B2 IXYS Description: IGBT PT 600V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
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IXGA16N60B2D1 IXGA16N60B2D1 IXYS littelfuse_discrete_igbts_pt_ixgp16n60b2d1_datasheet.pdf.pdf Description: IGBT 600V 40A 150W TO263
Power - Max: 150 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/73ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA16N60C2 IXGA16N60C2 IXYS DS99142C(IXGA-P16N60C2).pdf Description: IGBT 600V 40A 150W TO263
Power - Max: 150 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 160µJ (on), 90µJ (off)
Td (on/off) @ 25°C: 16ns/75ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA16N60C2D1 IXGA16N60C2D1 IXYS littelfuse-discrete-igbts-ixg-16n60c2d1-datasheet?assetguid=f4b962cd-14f6-4387-b898-acb47b01c799 Description: IGBT PT 600V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
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IXGA20N100 IXGA20N100 IXYS media?resourcetype=datasheets&itemid=27A5B769-E0DB-4343-BC7A-94A8579FBDAF&filename=Littelfuse-Discrete-IGBTs-PT-IXG-20N100-1of2-Datasheet.PDF Description: IGBT PT 1000V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXGA20N120 IXGA20N120 IXYS Description: IGBT PT 1200V 40A TO-263AA
Power - Max: 150 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 63 nC
Test Condition: 800V, 20A, 47Ohm, 15V
Switching Energy: 6.5mJ (off)
Td (on/off) @ 25°C: 28ns/400ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA20N120B IXGA20N120B IXYS Description: IGBT 1200V 40A TO-263AA
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 63 nC
Switching Energy: 6.5mJ (off)
Td (on/off) @ 25°C: 28ns/400ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA7N60B IXGA7N60B IXYS media?resourcetype=datasheets&itemid=B7684285-D6B1-4914-B5A7-644303A40FF8&filename=Littelfuse-Discrete-IGBTs-PT-IXGA7N60B-Datasheet.PDF Description: IGBT PT 600V 14A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
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IXGA7N60BD1 IXGA7N60BD1 IXYS IXG_7N60BD1.PDF Description: IGBT 600V 14A 80W TO263
Power - Max: 80 W
Current - Collector Pulsed (Icm): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 480V, 7A, 18Ohm, 15V
Switching Energy: 300µJ (off)
Td (on/off) @ 25°C: 10ns/100ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA7N60C IXGA7N60C IXYS 98564.pdf Description: IGBT 600V 14A 54W TO263
Power - Max: 54 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 480V, 7A, 22Ohm, 15V
Switching Energy: 70µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 9ns/65ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA7N60CD1 IXGA7N60CD1 IXYS 98720.pdf Description: IGBT 600V 14A 75W TO263
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 480V, 7A, 18Ohm, 15V
Switching Energy: 120µJ (off)
Td (on/off) @ 25°C: 10ns/65ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 75 W
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IXGA8N100 IXGA8N100 IXYS littelfuse_discrete_igbts_pt_ixg_8n100_datasheet.pdf.pdf Description: IGBT 1000V 16A 54W TO263
Current - Collector (Ic) (Max): 16 A
Gate Charge: 26.5 nC
Test Condition: 800V, 8A, 120Ohm, 15V
Switching Energy: 2.3mJ (off)
Td (on/off) @ 25°C: 15ns/600ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 54 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
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IXGC16N60B2 IXGC16N60B2 IXYS IXGC16N60B2,D1.pdf Description: IGBT 600V 28A 63W ISOPLUS220
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Power - Max: 63 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 32 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 150mJ (off)
Td (on/off) @ 25°C: 25ns/70ns
IGBT Type: PT
Supplier Device Package: ISOPLUS220™
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
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IXGC16N60B2D1 IXGC16N60B2D1 IXYS IXGC16N60B2,D1.pdf Description: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
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IXGC16N60C2 IXGC16N60C2 IXYS IXGC16N60C2%2CD1.pdf Description: IGBT PT 600V 20A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
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IXGC16N60C2D1 IXGC16N60C2D1 IXYS IXGC16N60C2%2CD1.pdf Description: IGBT PT 600V 20A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
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IXGE200N60B IXYS 98911.pdf Description: IGBT MOD 600V 160A ISOPLUS227
Packaging: Tube
Package / Case: ISOPLUS227™
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: ISOPLUS227™
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IXGF32N170 IXYS littelfuse_discrete_igbts_npt_ixgf32n170_datasheet.pdf.pdf Description: IGBT 1700V 44A 200W I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 10.6mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 200 W
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
1+1729.59 грн
25+1380.57 грн
100+1294.30 грн
500+1036.50 грн
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IXGH10N170 IXGH10N170 IXYS littelfuse-discrete-igbts-ixg-10n170-datasheet?assetguid=eaf33b10-8a19-43da-8aa2-8aba85c7a4eb Description: IGBT NPT 1700V 20A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 110 W
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
1+1061.62 грн
30+629.28 грн
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IXGH10N170A IXGH10N170A IXYS littelfuse-discrete-igbts-ixg-10n170a-datasheet?assetguid=4d943ef5-2422-4ba3-a4a1-4c8f476b60a5 Description: IGBT NPT 1700V 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/190ns
Switching Energy: 380µJ (off)
Test Condition: 850V, 10A, 22Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 140 W
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IXGH120N30C3 IXGH120N30C3 IXYS littelfuse_discrete_igbts_pt_ixgh120n30c3_datasheet.pdf.pdf Description: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/109ns
Switching Energy: 230µJ (on), 730µJ (off)
Test Condition: 200V, 60A, 2Ohm, 15V
Gate Charge: 230 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 540 W
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IXGH12N120A2D1 IXGH12N120A2D1 IXYS Description: IGBT 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH16N170 IXGH16N170 IXYS littelfuse-discrete-igbts-ixg-16n170-datasheet?assetguid=521904d3-bd7b-4fb7-962a-763ceeddcbd3 Description: IGBT NPT 1700V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/400ns
Switching Energy: 9.3mJ (off)
Test Condition: 1360V, 16A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
на замовлення 1347 шт:
термін постачання 21-31 дні (днів)
1+1053.10 грн
30+620.97 грн
120+534.94 грн
510+466.70 грн
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IXGH16N170A IXGH16N170A IXYS DS99235CIXGHT16N170AH1.pdf Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+1122.84 грн
В кошику  од. на суму  грн.
IXGH16N170AH1 IXGH16N170AH1 IXYS media?resourcetype=datasheets&itemid=31B2AD41-5A16-44E6-B9DF-71279DE8F8D8&filename=Littelfuse-Discrete-IGBTs-NPT-IXG-16N170A-Datasheet.PDF Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
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IXGH16N60B2D1 IXGH16N60B2D1 IXYS littelfuse-discrete-igbts-ixgp16n60b2d1-datasheet?assetguid=a24a6e81-d885-4b10-868d-93059184349d Description: IGBT PT 600V 40A TO-247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/73ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH16N60C2D1 IXGH16N60C2D1 IXYS littelfuse-discrete-igbts-ixg-16n60c2d1-datasheet?assetguid=f4b962cd-14f6-4387-b898-acb47b01c799 Description: IGBT PT 600V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
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IXGH20N100 IXGH20N100 IXYS media?resourcetype=datasheets&itemid=D9114108-52A1-4419-8ED3-EFB9E0332DBD&filename=Littelfuse-Discrete-IGBTs-PT-IXG-20N100-2of2-Datasheet.PDF Description: IGBT PT 1000V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXGH20N120 IXGH20N120 IXYS Description: IGBT PT 1200V 40A TO-247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 800V, 20A, 47Ohm, 15V
Switching Energy: 6.5mJ (off)
Td (on/off) @ 25°C: 28ns/400ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH20N120B IXGH20N120B IXYS Description: IGBT PT 1200V 40A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 72 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 2.1mJ (off)
Td (on/off) @ 25°C: 25ns/150ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH20N120BD1 IXGH20N120BD1 IXYS Description: IGBT 1200V 40A TO-247AD
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 72 nC
Switching Energy: 2.1mJ (off)
Td (on/off) @ 25°C: 25ns/150ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH20N120IH IXGH20N120IH IXYS Description: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH22N140IH IXGH22N140IH IXYS Description: IGBT 1400V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1400 V
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IXGH24N120IH IXGH24N120IH IXYS Description: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH24N170 IXGH24N170 IXYS littelfuse_discrete_igbts_npt_ixg_24n170_datasheet.pdf.pdf Description: IGBT 1700V 50A 250W TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 106 nC
Test Condition: 1360V, 50A, 5Ohm, 15V
Switching Energy: 8mJ (off)
Td (on/off) @ 25°C: 42ns/200ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+1199.56 грн
В кошику  од. на суму  грн.
IXGH24N170A IXGH24N170A IXYS media?resourcetype=datasheets&itemid=8C2E6414-9419-4902-AA0C-89B0A41A5E1A&filename=Littelfuse-Discrete-IGBTs-NPT-IXG-24N170A-Datasheet.PDF Description: IGBT 1700V 24A 250W TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 24 A
Part Status: Active
Gate Charge: 140 nC
Test Condition: 850V, 24A, 10Ohm, 15V
Switching Energy: 2.97mJ (on), 790µJ (off)
Td (on/off) @ 25°C: 21ns/336ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXGH25N160 IXGH25N160 IXYS littelfuse-discrete-igbts-ixg-25n160-datasheet?assetguid=e99d4d37-eadb-43a7-b39e-2759aaac9254 Description: IGBT NPT 1600V 75A TO-247AD
Power - Max: 300 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 84 nC
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
1+1102.69 грн
30+651.84 грн
120+562.02 грн
510+492.27 грн
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IXGH28N120BD1 IXGH28N120BD1 IXYS littelfuse_discrete_igbts_pt_ixgt28n120bd1_datasheet.pdf.pdf Description: IGBT PT 1200V 50A TO-247AD
Supplier Device Package: TO-247AD
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Part Status: Obsolete
Gate Charge: 92 nC
Test Condition: 960V, 28A, 5Ohm, 15V
Switching Energy: 2.2mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Power - Max: 250 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
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 Мінімальне замовлення: 30 шт
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS littelfuse-discrete-igbts-ixg-30n120b3d1-datasheet?assetguid=cff2e491-1b8d-43c2-9df6-8e501020c56a Description: IGBT PT 1200V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 976 шт:
термін постачання 21-31 дні (днів)
1+1001.96 грн
30+592.17 грн
120+510.49 грн
510+473.61 грн
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IXGH30N120BD1 IXGH30N120BD1 IXYS Description: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH30N120IH IXGH30N120IH IXYS Description: IGBT 1200V 50A TO-247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-247AD
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60B2 IXGH30N60B2 IXYS Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 66 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 320µJ (off)
Td (on/off) @ 25°C: 13ns/110ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60B2D1 IXGH30N60B2D1 IXYS Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 66 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 320µJ (off)
Td (on/off) @ 25°C: 13ns/110ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60C2 IXGH30N60C2 IXYS littelfuse-discrete-igbts-ixgh30n60c2-datasheet?assetguid=be5a5152-7cb6-4482-92c6-ec0ee9109a42 Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 70 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 290µJ (off)
Td (on/off) @ 25°C: 13ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60C2D1 IXGH30N60C2D1 IXYS Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 70 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 190µJ (off)
Td (on/off) @ 25°C: 13ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFX26N90 littelfuse-discrete-mosfets-ixf-26n90-datasheet?assetguid=d1a80220-3b82-4bab-9cf6-3581a5179ab5
IXFX26N90
Виробник: IXYS
Description: MOSFET N-CH 900V 26A PLUS 247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFX27N80Q Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-27N80Q-Datasheet.PDF?assetguid=8A073D63-78D0-4DED-AF8D-5593575C3C3C
IXFX27N80Q
Виробник: IXYS
Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
на замовлення 745 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1796.24 грн
30+1117.64 грн
120+1064.42 грн
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IXFX30N100Q2 IXF%28K%2CX%2930N100Q2.pdf
IXFX30N100Q2
Виробник: IXYS
Description: MOSFET N-CH 1000V 30A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFX38N80Q2 IXF%28K%2CN%2CX%2938N80Q2.pdf
IXFX38N80Q2
Виробник: IXYS
Description: MOSFET N-CH 800V 38A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFX44N55Q IXF(K,X)44N55Q.pdf
IXFX44N55Q
Виробник: IXYS
Description: MOSFET N-CH 550V 44A PLUS247
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IXFX48N50Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4_n50q_datasheet.pdf.pdf
IXFX48N50Q
Виробник: IXYS
Description: MOSFET N-CH 500V 48A PLUS247-3
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Мінімальне замовлення: 30 шт
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IXFX52N60Q2 IXF(K,X)52N60Q2.pdf
IXFX52N60Q2
Виробник: IXYS
Description: MOSFET N-CH 600V 52A PLUS247
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Мінімальне замовлення: 30 шт
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IXFX60N55Q2 DS98984B(IXFK-IXFX60N55Q2).pdf
IXFX60N55Q2
Виробник: IXYS
Description: MOSFET N-CH 550V 60A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFX66N50Q2 IXF(K,X)66N50Q2.pdf
IXFX66N50Q2
Виробник: IXYS
Description: MOSFET N-CH 500V 66A PLUS247
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Мінімальне замовлення: 30 шт
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IXFX73N30Q 98870.pdf
IXFX73N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 73A PLUS247
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Мінімальне замовлення: 30 шт
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IXFX88N20Q
IXFX88N20Q
Виробник: IXYS
Description: MOSFET N-CH 200V 88A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Box
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IXG611P1
IXG611P1
Виробник: IXYS
Description: IC DRIVER MOSF/IGBT 0.6A 8DIP
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Мінімальне замовлення: 450 шт
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IXG611S1
IXG611S1
Виробник: IXYS
Description: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
товару немає в наявності
Мінімальне замовлення: 470 шт
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IXG611S1T/R
IXG611S1T/R
Виробник: IXYS
Description: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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IXGA12N120A2 6689af5f-fadf-40fd-b3af-0d2db78b6f7b.pdf
IXGA12N120A2
Виробник: IXYS
Description: IGBT 1200V 24A 75W TO263
Gate Charge: 24 nC
Test Condition: 960V, 12A, 100Ohm, 15V
Switching Energy: 5.4mJ (off)
Td (on/off) @ 25°C: 15ns/680ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 75 W
Current - Collector Pulsed (Icm): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 24 A
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IXGA16N60B2
Виробник: IXYS
Description: IGBT PT 600V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
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IXGA16N60B2D1 littelfuse_discrete_igbts_pt_ixgp16n60b2d1_datasheet.pdf.pdf
IXGA16N60B2D1
Виробник: IXYS
Description: IGBT 600V 40A 150W TO263
Power - Max: 150 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/73ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA16N60C2 DS99142C(IXGA-P16N60C2).pdf
IXGA16N60C2
Виробник: IXYS
Description: IGBT 600V 40A 150W TO263
Power - Max: 150 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 160µJ (on), 90µJ (off)
Td (on/off) @ 25°C: 16ns/75ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA16N60C2D1 littelfuse-discrete-igbts-ixg-16n60c2d1-datasheet?assetguid=f4b962cd-14f6-4387-b898-acb47b01c799
IXGA16N60C2D1
Виробник: IXYS
Description: IGBT PT 600V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
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IXGA20N100 media?resourcetype=datasheets&itemid=27A5B769-E0DB-4343-BC7A-94A8579FBDAF&filename=Littelfuse-Discrete-IGBTs-PT-IXG-20N100-1of2-Datasheet.PDF
IXGA20N100
Виробник: IXYS
Description: IGBT PT 1000V 40A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXGA20N120
IXGA20N120
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-263AA
Power - Max: 150 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 63 nC
Test Condition: 800V, 20A, 47Ohm, 15V
Switching Energy: 6.5mJ (off)
Td (on/off) @ 25°C: 28ns/400ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA20N120B
IXGA20N120B
Виробник: IXYS
Description: IGBT 1200V 40A TO-263AA
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 63 nC
Switching Energy: 6.5mJ (off)
Td (on/off) @ 25°C: 28ns/400ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA7N60B media?resourcetype=datasheets&itemid=B7684285-D6B1-4914-B5A7-644303A40FF8&filename=Littelfuse-Discrete-IGBTs-PT-IXGA7N60B-Datasheet.PDF
IXGA7N60B
Виробник: IXYS
Description: IGBT PT 600V 14A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
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IXGA7N60BD1 IXG_7N60BD1.PDF
IXGA7N60BD1
Виробник: IXYS
Description: IGBT 600V 14A 80W TO263
Power - Max: 80 W
Current - Collector Pulsed (Icm): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 480V, 7A, 18Ohm, 15V
Switching Energy: 300µJ (off)
Td (on/off) @ 25°C: 10ns/100ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA7N60C 98564.pdf
IXGA7N60C
Виробник: IXYS
Description: IGBT 600V 14A 54W TO263
Power - Max: 54 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 480V, 7A, 22Ohm, 15V
Switching Energy: 70µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 9ns/65ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGA7N60CD1 98720.pdf
IXGA7N60CD1
Виробник: IXYS
Description: IGBT 600V 14A 75W TO263
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 480V, 7A, 18Ohm, 15V
Switching Energy: 120µJ (off)
Td (on/off) @ 25°C: 10ns/65ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 75 W
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IXGA8N100 littelfuse_discrete_igbts_pt_ixg_8n100_datasheet.pdf.pdf
IXGA8N100
Виробник: IXYS
Description: IGBT 1000V 16A 54W TO263
Current - Collector (Ic) (Max): 16 A
Gate Charge: 26.5 nC
Test Condition: 800V, 8A, 120Ohm, 15V
Switching Energy: 2.3mJ (off)
Td (on/off) @ 25°C: 15ns/600ns
IGBT Type: PT
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 54 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
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IXGC16N60B2 IXGC16N60B2,D1.pdf
IXGC16N60B2
Виробник: IXYS
Description: IGBT 600V 28A 63W ISOPLUS220
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Power - Max: 63 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 32 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 150mJ (off)
Td (on/off) @ 25°C: 25ns/70ns
IGBT Type: PT
Supplier Device Package: ISOPLUS220™
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
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IXGC16N60B2D1 IXGC16N60B2,D1.pdf
IXGC16N60B2D1
Виробник: IXYS
Description: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
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IXGC16N60C2 IXGC16N60C2%2CD1.pdf
IXGC16N60C2
Виробник: IXYS
Description: IGBT PT 600V 20A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
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IXGC16N60C2D1 IXGC16N60C2%2CD1.pdf
IXGC16N60C2D1
Виробник: IXYS
Description: IGBT PT 600V 20A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
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IXGE200N60B 98911.pdf
Виробник: IXYS
Description: IGBT MOD 600V 160A ISOPLUS227
Packaging: Tube
Package / Case: ISOPLUS227™
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: ISOPLUS227™
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IXGF32N170 littelfuse_discrete_igbts_npt_ixgf32n170_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1700V 44A 200W I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 10.6mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 200 W
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1729.59 грн
25+1380.57 грн
100+1294.30 грн
500+1036.50 грн
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IXGH10N170 littelfuse-discrete-igbts-ixg-10n170-datasheet?assetguid=eaf33b10-8a19-43da-8aa2-8aba85c7a4eb
IXGH10N170
Виробник: IXYS
Description: IGBT NPT 1700V 20A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 110 W
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1061.62 грн
30+629.28 грн
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IXGH10N170A littelfuse-discrete-igbts-ixg-10n170a-datasheet?assetguid=4d943ef5-2422-4ba3-a4a1-4c8f476b60a5
IXGH10N170A
Виробник: IXYS
Description: IGBT NPT 1700V 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/190ns
Switching Energy: 380µJ (off)
Test Condition: 850V, 10A, 22Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 140 W
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IXGH120N30C3 littelfuse_discrete_igbts_pt_ixgh120n30c3_datasheet.pdf.pdf
IXGH120N30C3
Виробник: IXYS
Description: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/109ns
Switching Energy: 230µJ (on), 730µJ (off)
Test Condition: 200V, 60A, 2Ohm, 15V
Gate Charge: 230 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 540 W
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IXGH12N120A2D1
IXGH12N120A2D1
Виробник: IXYS
Description: IGBT 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH16N170 littelfuse-discrete-igbts-ixg-16n170-datasheet?assetguid=521904d3-bd7b-4fb7-962a-763ceeddcbd3
IXGH16N170
Виробник: IXYS
Description: IGBT NPT 1700V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/400ns
Switching Energy: 9.3mJ (off)
Test Condition: 1360V, 16A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
на замовлення 1347 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1053.10 грн
30+620.97 грн
120+534.94 грн
510+466.70 грн
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IXGH16N170A DS99235CIXGHT16N170AH1.pdf
IXGH16N170A
Виробник: IXYS
Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1122.84 грн
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IXGH16N170AH1 media?resourcetype=datasheets&itemid=31B2AD41-5A16-44E6-B9DF-71279DE8F8D8&filename=Littelfuse-Discrete-IGBTs-NPT-IXG-16N170A-Datasheet.PDF
IXGH16N170AH1
Виробник: IXYS
Description: IGBT NPT 1700V 16A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
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IXGH16N60B2D1 littelfuse-discrete-igbts-ixgp16n60b2d1-datasheet?assetguid=a24a6e81-d885-4b10-868d-93059184349d
IXGH16N60B2D1
Виробник: IXYS
Description: IGBT PT 600V 40A TO-247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/73ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH16N60C2D1 littelfuse-discrete-igbts-ixg-16n60c2d1-datasheet?assetguid=f4b962cd-14f6-4387-b898-acb47b01c799
IXGH16N60C2D1
Виробник: IXYS
Description: IGBT PT 600V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
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IXGH20N100 media?resourcetype=datasheets&itemid=D9114108-52A1-4419-8ED3-EFB9E0332DBD&filename=Littelfuse-Discrete-IGBTs-PT-IXG-20N100-2of2-Datasheet.PDF
IXGH20N100
Виробник: IXYS
Description: IGBT PT 1000V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXGH20N120
IXGH20N120
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 800V, 20A, 47Ohm, 15V
Switching Energy: 6.5mJ (off)
Td (on/off) @ 25°C: 28ns/400ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH20N120B
IXGH20N120B
Виробник: IXYS
Description: IGBT PT 1200V 40A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 72 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 2.1mJ (off)
Td (on/off) @ 25°C: 25ns/150ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH20N120BD1
IXGH20N120BD1
Виробник: IXYS
Description: IGBT 1200V 40A TO-247AD
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 72 nC
Switching Energy: 2.1mJ (off)
Td (on/off) @ 25°C: 25ns/150ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH20N120IH
IXGH20N120IH
Виробник: IXYS
Description: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH22N140IH
IXGH22N140IH
Виробник: IXYS
Description: IGBT 1400V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1400 V
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IXGH24N120IH
IXGH24N120IH
Виробник: IXYS
Description: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH24N170 littelfuse_discrete_igbts_npt_ixg_24n170_datasheet.pdf.pdf
IXGH24N170
Виробник: IXYS
Description: IGBT 1700V 50A 250W TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 106 nC
Test Condition: 1360V, 50A, 5Ohm, 15V
Switching Energy: 8mJ (off)
Td (on/off) @ 25°C: 42ns/200ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1199.56 грн
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IXGH24N170A media?resourcetype=datasheets&itemid=8C2E6414-9419-4902-AA0C-89B0A41A5E1A&filename=Littelfuse-Discrete-IGBTs-NPT-IXG-24N170A-Datasheet.PDF
IXGH24N170A
Виробник: IXYS
Description: IGBT 1700V 24A 250W TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 24 A
Part Status: Active
Gate Charge: 140 nC
Test Condition: 850V, 24A, 10Ohm, 15V
Switching Energy: 2.97mJ (on), 790µJ (off)
Td (on/off) @ 25°C: 21ns/336ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXGH25N160 littelfuse-discrete-igbts-ixg-25n160-datasheet?assetguid=e99d4d37-eadb-43a7-b39e-2759aaac9254
IXGH25N160
Виробник: IXYS
Description: IGBT NPT 1600V 75A TO-247AD
Power - Max: 300 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 84 nC
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1102.69 грн
30+651.84 грн
120+562.02 грн
510+492.27 грн
В кошику  од. на суму  грн.
IXGH28N120BD1 littelfuse_discrete_igbts_pt_ixgt28n120bd1_datasheet.pdf.pdf
IXGH28N120BD1
Виробник: IXYS
Description: IGBT PT 1200V 50A TO-247AD
Supplier Device Package: TO-247AD
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Part Status: Obsolete
Gate Charge: 92 nC
Test Condition: 960V, 28A, 5Ohm, 15V
Switching Energy: 2.2mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Power - Max: 250 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
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Мінімальне замовлення: 30 шт
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IXGH30N120B3D1 littelfuse-discrete-igbts-ixg-30n120b3d1-datasheet?assetguid=cff2e491-1b8d-43c2-9df6-8e501020c56a
IXGH30N120B3D1
Виробник: IXYS
Description: IGBT PT 1200V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 976 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1001.96 грн
30+592.17 грн
120+510.49 грн
510+473.61 грн
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IXGH30N120BD1
IXGH30N120BD1
Виробник: IXYS
Description: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXGH30N120IH
IXGH30N120IH
Виробник: IXYS
Description: IGBT 1200V 50A TO-247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-247AD
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60B2
IXGH30N60B2
Виробник: IXYS
Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 66 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 320µJ (off)
Td (on/off) @ 25°C: 13ns/110ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60B2D1
IXGH30N60B2D1
Виробник: IXYS
Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 66 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 320µJ (off)
Td (on/off) @ 25°C: 13ns/110ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60C2 littelfuse-discrete-igbts-ixgh30n60c2-datasheet?assetguid=be5a5152-7cb6-4482-92c6-ec0ee9109a42
IXGH30N60C2
Виробник: IXYS
Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 70 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 290µJ (off)
Td (on/off) @ 25°C: 13ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH30N60C2D1
IXGH30N60C2D1
Виробник: IXYS
Description: IGBT PT 600V 70A TO-247AD
Power - Max: 190 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 70 nC
Test Condition: 400V, 24A, 5Ohm, 15V
Switching Energy: 190µJ (off)
Td (on/off) @ 25°C: 13ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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