Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (336894) > Сторінка 1339 з 5615
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ATSAML21J17B-MNT | Microchip Technology |
 Description: IC MCU 32BIT 128KB FLASH 64QFNPackaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 20x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V Connectivity: I2C, LINbus, SCI, SPI, UART/USART, USB Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 51 DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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ATSAML21J17B-MNT | Microchip Technology |
Description: IC MCU 32BIT 128KB FLASH 64QFN Packaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 20x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V Connectivity: I2C, LINbus, SCI, SPI, UART/USART, USB Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 51 DigiKey Programmable: Not Verified |
на замовлення 9363 шт: термін постачання 21-31 дні (днів) |
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| CD5804 | Microchip Technology | Description: RECTIFIER UFR,FRR |
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| CD5806 | Microchip Technology | Description: RECTIFIER UFR,FRR |
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| 1N5665 | Microchip Technology |
Description: TVS DIODE |
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| 2N5665 | Microchip Technology |
Description: TRANS NPN 300V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 2.5 W |
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| JANTX1N5665A | Microchip Technology |
Description: TVS DIODE 171V 274V DO13 |
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1N5665A/TR | Microchip Technology |
Description: UNI-DIRECTIONAL TVS |
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JAN1N5665A/TR | Microchip Technology | Description: UNI-DIRECTIONAL TVS |
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JANTXV1N5665A/TR | Microchip Technology | Description: UNI-DIRECTIONAL TVS |
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48L640T-I/SN | Microchip Technology |
Description: IC EERAM 64KBIT SPI 66MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: EEPROM, SRAM Clock Frequency: 66 MHz Memory Format: EERAM Supplier Device Package: 8-SOIC Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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93AA46AE48T-I/OT | Microchip Technology |
Description: IC EEPROM 1KBIT MIC WIRE SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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47L64T-I/SN | Microchip Technology |
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC |
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48L256T-I/SN | Microchip Technology |
Description: IC EERAM 256KBIT SPI 66MHZ 8SOIC |
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48L512T-I/SN | Microchip Technology |
Description: IC EERAM 512KBIT SPI 66MHZ 8SOIC |
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ATXMEGA32C3-AUR | Microchip Technology |
Description: IC MCU 8/16BIT 32KB FLASH 64TQFP Packaging: Cut Tape (CT) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (16K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: AVR Data Converters: A/D 16x12b Core Size: 8/16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V Connectivity: I2C, IrDA, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Part Status: Active Number of I/O: 50 DigiKey Programmable: Not Verified |
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| BZV55C9V1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Supplier Device Package: DO-213AA Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
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JAN1N5711-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 70 V Qualification: MIL-PRF-19500/444 |
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| JANTXV1N5711UR-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 50V 33MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Qualification: MIL-PRF-19500/444 |
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| JAN1N5711UR-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Qualification: MIL-PRF-19500/444 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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JANTXV1N5711-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 50V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/444 |
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1N5711-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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1N5711E3/TR | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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| 1N5711UR-1E3/TR | Microchip Technology |
Description: DIODE SCHOTTKY 50V 33MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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JANTXV1N5711UB/TR | Microchip Technology |
Description: DIODE SCHOTTKY 50V UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/444 |
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-Axial-Microchip.JPG "JANKCA1N5711") |
JANKCA1N5711 | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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JANHCA1N5711 | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/444 |
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1N5711/TR | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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JANS1N5711UB/TR | Microchip Technology |
Description: DIODE SCHOTTKY 50V UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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| 1N5711UR-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 50V 33MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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JANTX1N5711UB/TR | Microchip Technology |
Description: DIODE SCHOTTKY 50V UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/444 |
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1N5711E3 | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V |
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Jantxv2N3057A | Microchip Technology |
Description: TRANS NPN 80V 1A TO46-3 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-46-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
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JAN2N3057A | Microchip Technology |
Description: TRANS NPN 80V 1A TO46-3 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-46-3 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
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JANTX2N3057A | Microchip Technology |
Description: TRANS NPN 80V 1A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-46 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
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JANSR2N3057A | Microchip Technology |
Description: TRANS NPN 80V 1A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-46 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
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1N5240A/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V |
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-Axial-Microchip.JPG "1N5240B/TR") |
1N5240B/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 8 V |
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PIC16F18425-E/SL | Microchip Technology |
Description: IC MCU 8BIT 14KB FLASH 14SOIC |
на замовлення 334 шт: термін постачання 21-31 дні (днів) |
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ATSAMG55J19B-AU | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64LQFP |
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ATSAMG55J19B-AUT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 176K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, SPI, UART/USART, USB Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 48 DigiKey Programmable: Not Verified |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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ATSAMG55J19B-AUT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 176K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I2C, SPI, UART/USART, USB Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 48 DigiKey Programmable: Not Verified |
на замовлення 2863 шт: термін постачання 21-31 дні (днів) |
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ATSAMG55J19B-MU | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64QFN |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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ATSAMG55J19B-MUT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 176K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I²C, SPI, UART/USART, USB Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: 64-QFN (7.5x7.5) Number of I/O: 48 DigiKey Programmable: Not Verified |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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ATSAMG55J19B-MUT | Microchip Technology |
Description: IC MCU 32BIT 512KB FLASH 64QFN Packaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 176K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: I²C, SPI, UART/USART, USB Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: 64-QFN (7.5x7.5) Number of I/O: 48 DigiKey Programmable: Not Verified |
на замовлення 5247 шт: термін постачання 21-31 дні (днів) |
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BM70BLE01FC2-0B05BA | Microchip Technology |
Description: RF TXRX MODULE BLUETOOTH SMD Packaging: Tray Package / Case: 30-SMD Module Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.402GHz ~ 2.48GHz Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.9V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v5.0 Current - Receiving: 10mA Current - Transmitting: 10mA Antenna Type: Antenna Not Included RF Family/Standard: Bluetooth Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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BM70BLES1FC2-0B05BA | Microchip Technology |
Description: RF TXRX MODULE BT CHIP SMD Packaging: Tray Package / Case: 33-SMD Module Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.402GHz ~ 2.48GHz Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.9V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v5.0 Current - Receiving: 10mA Current - Transmitting: 10mA Antenna Type: Integrated, Chip RF Family/Standard: Bluetooth Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 61 шт: термін постачання 21-31 дні (днів) |
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BM70BLE01FC2-0B04AA | Microchip Technology |
Description: RF TXRX MODULE BLUETOOTH SMD Packaging: Tray Package / Case: 30-SMD Module Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.9V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v5.0 Current - Receiving: 13mA Current - Transmitting: 13mA Antenna Type: Antenna Not Included RF Family/Standard: Bluetooth Serial Interfaces: I²C, SPI, UART DigiKey Programmable: Not Verified |
на замовлення 136 шт: термін постачання 21-31 дні (днів) |
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.jpg "MXLSMLJ5.0Ae3") |
MXLSMLJ5.0Ae3 | Microchip Technology |
Description: TVS DIODE 5VWM 9.2VC DO214AB |
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ATSAMD20E15B-AU | Microchip Technology |
Description: IC MCU 32BIT 32KB FLASH 32TQFP |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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| 678-2 | Microchip Technology |
Description: BRIDGE RECTIFIER |
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| BZV55C6V2/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Supplier Device Package: DO-213AA Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
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| CDLL4148E3 | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V |
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| CDLL4148/TR | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V |
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| PIC16F785T/CSD01 | Microchip Technology | Description: IC MCU 8BIT 3.5KB FLASH 20PLCC |
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| BZV55C5V6/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±7% Packaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: DO-213AA Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
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JANS2N918UB/TR | Microchip Technology |
Description: TRANS NPN 15V 0.05A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Grade: Military Qualification: MIL-PRF-19500/301 |
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| JAN2N918UB/TR | Microchip Technology |
Description: TRANS NPN 15V 0.05A Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Non-Standard Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Grade: Military Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Qualification: MIL-PRF-19500/301 |
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JANTXV2N918UB/TR | Microchip Technology |
Description: TRANS NPN 15V 0.05A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Qualification: MIL-PRF-19500/301 |
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JANTX2N918UB/TR | Microchip Technology |
Description: TRANS NPN 15V 0.05A UB Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Qualification: MIL-PRF-19500/301 |
товар відсутній |
| ATSAML21J17B-MNT |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SCI, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SCI, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 264.45 грн |
| ATSAML21J17B-MNT |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SCI, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SCI, SPI, UART/USART, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 9363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 321.33 грн |
| 25+ | 281.58 грн |
| 100+ | 254.66 грн |
| 2N5665 |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
товар відсутній
| 48L640T-I/SN |
|
Виробник: Microchip Technology
Description: IC EERAM 64KBIT SPI 66MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 66 MHz
Memory Format: EERAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EERAM 64KBIT SPI 66MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 66 MHz
Memory Format: EERAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
| 93AA46AE48T-I/OT |
|
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.75 грн |
| 47L64T-I/SN |
|
Виробник: Microchip Technology
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC
Description: IC EERAM 64KBIT I2C 1MHZ 8SOIC
товар відсутній
| 48L256T-I/SN |
|
Виробник: Microchip Technology
Description: IC EERAM 256KBIT SPI 66MHZ 8SOIC
Description: IC EERAM 256KBIT SPI 66MHZ 8SOIC
товар відсутній
| 48L512T-I/SN |
|
Виробник: Microchip Technology
Description: IC EERAM 512KBIT SPI 66MHZ 8SOIC
Description: IC EERAM 512KBIT SPI 66MHZ 8SOIC
товар відсутній
| ATXMEGA32C3-AUR |
|
Виробник: Microchip Technology
Description: IC MCU 8/16BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 8/16BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
товар відсутній
| BZV55C9V1/TR |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
товар відсутній
| JAN1N5711-1/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Qualification: MIL-PRF-19500/444
товар відсутній
| JANTXV1N5711UR-1/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
товар відсутній
| JAN1N5711UR-1/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 585.56 грн |
| JANTXV1N5711-1/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 50V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
| 1N5711-1/TR |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| 1N5711E3/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| 1N5711UR-1E3/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| JANTXV1N5711UB/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
| JANKCA1N5711 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| JANHCA1N5711 |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
| 1N5711/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| JANS1N5711UB/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| 1N5711UR-1/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| JANTX1N5711UB/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
| 1N5711E3 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
товар відсутній
| Jantxv2N3057A |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товар відсутній
| JAN2N3057A |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товар відсутній
| JANTX2N3057A |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товар відсутній
| JANSR2N3057A |
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
товар відсутній
| 1N5240A/TR |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
товар відсутній
| 1N5240B/TR |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
товар відсутній
| PIC16F18425-E/SL |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 14SOIC
Description: IC MCU 8BIT 14KB FLASH 14SOIC
на замовлення 334 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.74 грн |
| 25+ | 100.22 грн |
| 100+ | 91.12 грн |
| ATSAMG55J19B-AU |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Description: IC MCU 32BIT 512KB FLASH 64LQFP
товар відсутній
| ATSAMG55J19B-AUT |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 310.5 грн |
| ATSAMG55J19B-AUT |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 2863 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 376.78 грн |
| 25+ | 329.34 грн |
| 100+ | 299 грн |
| ATSAMG55J19B-MU |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Description: IC MCU 32BIT 512KB FLASH 64QFN
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| ATSAMG55J19B-MUT |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, SPI, UART/USART, USB
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, SPI, UART/USART, USB
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 298.14 грн |
| ATSAMG55J19B-MUT |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, SPI, UART/USART, USB
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I²C, SPI, UART/USART, USB
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 5247 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 361.85 грн |
| 25+ | 316.44 грн |
| 100+ | 287.1 грн |
| BM70BLE01FC2-0B05BA |
Виробник: Microchip Technology
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 142 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 501.9 грн |
| BM70BLES1FC2-0B05BA |
|
Виробник: Microchip Technology
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tray
Package / Case: 33-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tray
Package / Case: 33-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 61 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 600.71 грн |
| 25+ | 528.71 грн |
| BM70BLE01FC2-0B04AA |
|
Виробник: Microchip Technology
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Current - Transmitting: 13mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, SPI, UART
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Current - Transmitting: 13mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 136 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 495.5 грн |
| 25+ | 436.1 грн |
| MXLSMLJ5.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 9.2VC DO214AB
Description: TVS DIODE 5VWM 9.2VC DO214AB
товар відсутній
| ATSAMD20E15B-AU |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 32TQFP
Description: IC MCU 32BIT 32KB FLASH 32TQFP
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.3 грн |
| 25+ | 154.22 грн |
| 100+ | 139.49 грн |
| BZV55C6V2/TR |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
товар відсутній
| CDLL4148E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
товар відсутній
| CDLL4148/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
товар відсутній
| PIC16F785T/CSD01 |
Виробник: Microchip Technology
Description: IC MCU 8BIT 3.5KB FLASH 20PLCC
Description: IC MCU 8BIT 3.5KB FLASH 20PLCC
товар відсутній
| BZV55C5V6/TR |
|
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: VOLTAGE REGULATOR
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товар відсутній
| JANS2N918UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
товар відсутній
| JAN2N918UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
Description: TRANS NPN 15V 0.05A
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
товар відсутній
| JANTXV2N918UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
товар відсутній
| JANTX2N918UB/TR |
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/301
товар відсутній