Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (293432) > Сторінка 4891 з 4891
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MCP41HV51T-502E/ST | MICROCHIP TECHNOLOGY |
 Category: Digital potentiometersDescription: IC: digital potentiometer; SPI; TSSOP14; SMD; Ch: 1; reel,tape Type of integrated circuit: digital potentiometer Interface: SPI Case: TSSOP14 Mounting: SMD Operating temperature: -40...125°C Manufacturer standard package: 2500pcs. Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
 |
MCP41HV51T-503E/MQ | MICROCHIP TECHNOLOGY |
Category: Digital potentiometers Description: IC: digital potentiometer; SPI; QFN20; SMD; reel,tape Type of integrated circuit: digital potentiometer Interface: SPI Case: QFN20 Mounting: SMD Operating temperature: -40...125°C Manufacturer standard package: 3300pcs. Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
|
MCP41HV51T-503E/ST | MICROCHIP TECHNOLOGY |
Category: Digital potentiometers Description: IC: digital potentiometer; SPI; TSSOP14; SMD; reel,tape Type of integrated circuit: digital potentiometer Interface: SPI Case: TSSOP14 Mounting: SMD Kind of memory: volatile Operating temperature: -40...125°C Manufacturer standard package: 2500pcs. Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
 |
ATA6847T-5050LH/ZWXVAO | MICROCHIP TECHNOLOGY |
Category: Motor and PWM drivers Description: IC: driver; system basis chip SBC; VQFN48; 5V; 3÷42VDC Type of integrated circuit: driver Mounting: SMD Case: VQFN48 Operating temperature: -40...150°C Operating voltage: 3...42V DC Kind of package: reel; tape Manufacturer standard package: 3300pcs. Kind of output: gate driver Integrated circuit features: integrated voltage regulator; LIN transceiver; motor gate driver unit GDU; operational amplifier x2 Application: 3-phase BLDC motors; automotive industry Output voltage: 5V Kind of integrated circuit: system basis chip SBC |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
|
||||||
 |
MCP8048T-5050H/ZWXVAO | MICROCHIP TECHNOLOGY |
Category: Motor and PWM drivers Description: IC: driver; system basis chip SBC; SPI; VQFN48; 5V; 3÷42VDC Type of integrated circuit: driver Mounting: SMD Case: VQFN48 Operating temperature: -40...150°C Operating voltage: 3...42V DC Kind of package: reel; tape Manufacturer standard package: 3300pcs. Kind of output: gate driver Integrated circuit features: integrated voltage regulator; LIN transceiver; motor gate driver unit GDU; operational amplifier Application: 3-phase BLDC motors Output voltage: 5V Interface: SPI Kind of integrated circuit: system basis chip SBC |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
|
||||||
 |
APT40GR120B2D30 | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Power dissipation: 500W Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Turn-on time: 47ns Kind of package: tube Case: T-Max Turn-off time: 232ns Gate-emitter voltage: ±30V Part status: Not recommended for new designs Collector current: 40A Mounting: THT Collector-emitter voltage: 1.2kV |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
|
||||||
|
|
APT70GR120B2 | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3 Power dissipation: 961W Gate charge: 412nC Technology: NPT Ultra Fast IGBT Pulsed collector current: 280A Type of transistor: IGBT Turn-on time: 81ns Kind of package: tube Case: TO247-3 Turn-off time: 394ns Gate-emitter voltage: ±30V Collector current: 70A Mounting: THT Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
APT85GR120B2 | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Power dissipation: 962W Gate charge: 0.49µC Technology: NPT Ultra Fast IGBT Pulsed collector current: 340A Type of transistor: IGBT Turn-on time: 113ns Kind of package: tube Case: TO247-3 Turn-off time: 445ns Gate-emitter voltage: ±30V Collector current: 85A Mounting: THT Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| APT85GR120J | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Type of semiconductor module: IGBT Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw Pulsed collector current: 340A Application: for UPS; Inverter; motors Max. off-state voltage: 1.2kV Electrical mounting: screw Kind of package: tube Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±30V Collector current: 85A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| APT70GR120JD60 | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of semiconductor module: IGBT Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw Pulsed collector current: 280A Max. off-state voltage: 1.2kV Electrical mounting: screw Kind of package: tube Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±30V Collector current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| APT85GR120JD60 | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Type of semiconductor module: IGBT Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw Pulsed collector current: 340A Application: for UPS; Inverter; motors Max. off-state voltage: 1.2kV Electrical mounting: screw Kind of package: tube Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±30V Collector current: 85A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
|
APT25GR120B | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Power dissipation: 521W Gate charge: 154nC Technology: NPT; POWER MOS 8® Pulsed collector current: 100A Type of transistor: IGBT Turn-on time: 26ns Kind of package: tube Case: TO247-3 Turn-off time: 164ns Gate-emitter voltage: ±30V Part status: Not recommended for new designs Collector current: 25A Mounting: THT Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
APT50GR120B2 | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: T-Max Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Mounting: THT Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| APT50GR120JD30 | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Type of semiconductor module: IGBT Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: screw Kind of package: tube Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±30V Collector current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
APT50GR120L | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Power dissipation: 694W Gate charge: 330nC Technology: NPT; POWER MOS 8® Pulsed collector current: 200A Type of transistor: IGBT Turn-on time: 66ns Kind of package: tube Case: TO264 Turn-off time: 324ns Gate-emitter voltage: ±30V Collector current: 50A Mounting: THT Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| APT70GR120J | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of semiconductor module: IGBT Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw Pulsed collector current: 280A Max. off-state voltage: 1.2kV Electrical mounting: screw Kind of package: tube Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±30V Collector current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
|
APT70GR120L | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264 Power dissipation: 961W Gate charge: 412nC Technology: NPT; POWER MOS 8® Pulsed collector current: 280A Type of transistor: IGBT Turn-on time: 81ns Kind of package: tube Case: TO264 Turn-off time: 394ns Gate-emitter voltage: ±30V Collector current: 70A Mounting: THT Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
|
APT85GR120L | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Power dissipation: 962W Gate charge: 0.49µC Technology: NPT; POWER MOS 8® Pulsed collector current: 340A Type of transistor: IGBT Turn-on time: 113ns Kind of package: tube Case: TO264 Turn-off time: 445ns Gate-emitter voltage: ±30V Collector current: 85A Mounting: THT Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
USB50424CE3/TR7 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.5kW; 26.7V; bidirectional; Ch: 1; reel,tape Type of diode: TVS Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Max. off-state voltage: 24V Number of channels: 1 Kind of package: reel; tape Manufacturer standard package: 3000pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
| USB50824e3/TR13 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; SOIC8; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 2500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
 |
USB50824/TR13 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 2500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
|
|
USB50824/TR7 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| USB50824C-A/TR13 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 2500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
| USB50824C-A/TR7 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||
 |
USB50824C-Ae3/TR13 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 2500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
 |
USB50824C/TR13 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 2500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
|
|
USB50824C/TR7 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
 |
USB50824CE3/TR13 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 2500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||
|
|
USB50824CE3/TR7 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 4 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 4 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| USB50824E3/TR7 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: SOIC8 Max. off-state voltage: 24V Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 500pcs. Capacitance: 3pF |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||
 |
USB50424e3/TR7 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 5A; 500W; unidirectional; SOT143; Ch: 1 Type of diode: TVS array Breakdown voltage: 26.7V Max. forward impulse current: 5A Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT143 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 1 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
 |
USB50824C-Ae3/TR7 | MICROCHIP TECHNOLOGY |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.7V; 5A; 500W; bidirectional; SO8; Ch: 2 Type of diode: TVS array Breakdown voltage: 26.7V Max. forward impulse current: 5A Peak pulse power dissipation: 0.5kW Semiconductor structure: bidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Application: Ethernet Kind of package: reel; tape Manufacturer standard package: 500pcs. |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| MCP41HV51T-502E/ST |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: digital potentiometer; SPI; TSSOP14; SMD; Ch: 1; reel,tape
Type of integrated circuit: digital potentiometer
Interface: SPI
Case: TSSOP14
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer standard package: 2500pcs.
Number of channels: 1
Kind of package: reel; tape
Category: Digital potentiometers
Description: IC: digital potentiometer; SPI; TSSOP14; SMD; Ch: 1; reel,tape
Type of integrated circuit: digital potentiometer
Interface: SPI
Case: TSSOP14
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer standard package: 2500pcs.
Number of channels: 1
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MCP41HV51T-503E/MQ |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: digital potentiometer; SPI; QFN20; SMD; reel,tape
Type of integrated circuit: digital potentiometer
Interface: SPI
Case: QFN20
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer standard package: 3300pcs.
Kind of package: reel; tape
Category: Digital potentiometers
Description: IC: digital potentiometer; SPI; QFN20; SMD; reel,tape
Type of integrated circuit: digital potentiometer
Interface: SPI
Case: QFN20
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer standard package: 3300pcs.
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| MCP41HV51T-503E/ST |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: digital potentiometer; SPI; TSSOP14; SMD; reel,tape
Type of integrated circuit: digital potentiometer
Interface: SPI
Case: TSSOP14
Mounting: SMD
Kind of memory: volatile
Operating temperature: -40...125°C
Manufacturer standard package: 2500pcs.
Kind of package: reel; tape
Category: Digital potentiometers
Description: IC: digital potentiometer; SPI; TSSOP14; SMD; reel,tape
Type of integrated circuit: digital potentiometer
Interface: SPI
Case: TSSOP14
Mounting: SMD
Kind of memory: volatile
Operating temperature: -40...125°C
Manufacturer standard package: 2500pcs.
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ATA6847T-5050LH/ZWXVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: Motor and PWM drivers
Description: IC: driver; system basis chip SBC; VQFN48; 5V; 3÷42VDC
Type of integrated circuit: driver
Mounting: SMD
Case: VQFN48
Operating temperature: -40...150°C
Operating voltage: 3...42V DC
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Kind of output: gate driver
Integrated circuit features: integrated voltage regulator; LIN transceiver; motor gate driver unit GDU; operational amplifier x2
Application: 3-phase BLDC motors; automotive industry
Output voltage: 5V
Kind of integrated circuit: system basis chip SBC
Category: Motor and PWM drivers
Description: IC: driver; system basis chip SBC; VQFN48; 5V; 3÷42VDC
Type of integrated circuit: driver
Mounting: SMD
Case: VQFN48
Operating temperature: -40...150°C
Operating voltage: 3...42V DC
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Kind of output: gate driver
Integrated circuit features: integrated voltage regulator; LIN transceiver; motor gate driver unit GDU; operational amplifier x2
Application: 3-phase BLDC motors; automotive industry
Output voltage: 5V
Kind of integrated circuit: system basis chip SBC
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 209.75 грн |
| 6+ | 170.01 грн |
| MCP8048T-5050H/ZWXVAO |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Motor and PWM drivers
Description: IC: driver; system basis chip SBC; SPI; VQFN48; 5V; 3÷42VDC
Type of integrated circuit: driver
Mounting: SMD
Case: VQFN48
Operating temperature: -40...150°C
Operating voltage: 3...42V DC
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Kind of output: gate driver
Integrated circuit features: integrated voltage regulator; LIN transceiver; motor gate driver unit GDU; operational amplifier
Application: 3-phase BLDC motors
Output voltage: 5V
Interface: SPI
Kind of integrated circuit: system basis chip SBC
Category: Motor and PWM drivers
Description: IC: driver; system basis chip SBC; SPI; VQFN48; 5V; 3÷42VDC
Type of integrated circuit: driver
Mounting: SMD
Case: VQFN48
Operating temperature: -40...150°C
Operating voltage: 3...42V DC
Kind of package: reel; tape
Manufacturer standard package: 3300pcs.
Kind of output: gate driver
Integrated circuit features: integrated voltage regulator; LIN transceiver; motor gate driver unit GDU; operational amplifier
Application: 3-phase BLDC motors
Output voltage: 5V
Interface: SPI
Kind of integrated circuit: system basis chip SBC
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.51 грн |
| 5+ | 202.19 грн |
| 13+ | 191.47 грн |
| APT40GR120B2D30 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Turn-on time: 47ns
Kind of package: tube
Case: T-Max
Turn-off time: 232ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 40A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Turn-on time: 47ns
Kind of package: tube
Case: T-Max
Turn-off time: 232ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 40A
Mounting: THT
Collector-emitter voltage: 1.2kV
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1413.13 грн |
| 2+ | 1241.22 грн |
| APT70GR120B2 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Power dissipation: 961W
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Pulsed collector current: 280A
Type of transistor: IGBT
Turn-on time: 81ns
Kind of package: tube
Case: TO247-3
Turn-off time: 394ns
Gate-emitter voltage: ±30V
Collector current: 70A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3
Power dissipation: 961W
Gate charge: 412nC
Technology: NPT Ultra Fast IGBT
Pulsed collector current: 280A
Type of transistor: IGBT
Turn-on time: 81ns
Kind of package: tube
Case: TO247-3
Turn-off time: 394ns
Gate-emitter voltage: ±30V
Collector current: 70A
Mounting: THT
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| APT85GR120B2 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Power dissipation: 962W
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Pulsed collector current: 340A
Type of transistor: IGBT
Turn-on time: 113ns
Kind of package: tube
Case: TO247-3
Turn-off time: 445ns
Gate-emitter voltage: ±30V
Collector current: 85A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Power dissipation: 962W
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Pulsed collector current: 340A
Type of transistor: IGBT
Turn-on time: 113ns
Kind of package: tube
Case: TO247-3
Turn-off time: 445ns
Gate-emitter voltage: ±30V
Collector current: 85A
Mounting: THT
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| APT85GR120J |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 85A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 85A
товару немає в наявності
В кошику
од. на суму грн.
| APT70GR120JD60 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 70A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 70A
товару немає в наявності
В кошику
од. на суму грн.
| APT85GR120JD60 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 85A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 85A
товару немає в наявності
В кошику
од. на суму грн.
| APT25GR120B |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Power dissipation: 521W
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 100A
Type of transistor: IGBT
Turn-on time: 26ns
Kind of package: tube
Case: TO247-3
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3
Power dissipation: 521W
Gate charge: 154nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 100A
Type of transistor: IGBT
Turn-on time: 26ns
Kind of package: tube
Case: TO247-3
Turn-off time: 164ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 25A
Mounting: THT
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| APT50GR120B2 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: T-Max
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: T-Max
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Mounting: THT
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| APT50GR120JD30 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 50A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 50A
товару немає в наявності
В кошику
од. на суму грн.
| APT50GR120L |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: TO264
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Power dissipation: 694W
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 200A
Type of transistor: IGBT
Turn-on time: 66ns
Kind of package: tube
Case: TO264
Turn-off time: 324ns
Gate-emitter voltage: ±30V
Collector current: 50A
Mounting: THT
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| APT70GR120J |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 70A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 70A
товару немає в наявності
В кошику
од. на суму грн.
| APT70GR120L |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Power dissipation: 961W
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 280A
Type of transistor: IGBT
Turn-on time: 81ns
Kind of package: tube
Case: TO264
Turn-off time: 394ns
Gate-emitter voltage: ±30V
Collector current: 70A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Power dissipation: 961W
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 280A
Type of transistor: IGBT
Turn-on time: 81ns
Kind of package: tube
Case: TO264
Turn-off time: 394ns
Gate-emitter voltage: ±30V
Collector current: 70A
Mounting: THT
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| APT85GR120L |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Power dissipation: 962W
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 340A
Type of transistor: IGBT
Turn-on time: 113ns
Kind of package: tube
Case: TO264
Turn-off time: 445ns
Gate-emitter voltage: ±30V
Collector current: 85A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Power dissipation: 962W
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 340A
Type of transistor: IGBT
Turn-on time: 113ns
Kind of package: tube
Case: TO264
Turn-off time: 445ns
Gate-emitter voltage: ±30V
Collector current: 85A
Mounting: THT
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| USB50424CE3/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.5kW; 26.7V; bidirectional; Ch: 1; reel,tape
Type of diode: TVS
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Capacitance: 3pF
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.5kW; 26.7V; bidirectional; Ch: 1; reel,tape
Type of diode: TVS
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| USB50824e3/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; SOIC8; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; SOIC8; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| USB50824/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| USB50824/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| USB50824C-A/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| USB50824C-A/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| USB50824C-Ae3/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| USB50824C/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| USB50824C/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| USB50824CE3/TR13 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 2500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| USB50824CE3/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 4
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 4
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; bidirectional; SOIC8; Ch: 4
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 4
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| USB50824E3/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 0.5kW; unidirectional; SOIC8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOIC8
Max. off-state voltage: 24V
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| USB50424e3/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 500W; unidirectional; SOT143; Ch: 1
Type of diode: TVS array
Breakdown voltage: 26.7V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 500W; unidirectional; SOT143; Ch: 1
Type of diode: TVS array
Breakdown voltage: 26.7V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 1
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| USB50824C-Ae3/TR7 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 500W; bidirectional; SO8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 500W; bidirectional; SO8; Ch: 2
Type of diode: TVS array
Breakdown voltage: 26.7V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Application: Ethernet
Kind of package: reel; tape
Manufacturer standard package: 500pcs.
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.