Продукція > MICRON TECHNOLOGY INC. > Всі товари виробника MICRON TECHNOLOGY INC. (10985) > Сторінка 169 з 184
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MT46H16M32LFCM-5 IT:B | Micron Technology Inc. |
 Description: IC DRAM 512MBIT PAR 90VFBGAPackaging: Tray Package / Case: 90-VFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 90-VFBGA (10x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 16M x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT29F4G01ABAFDWB-IT:F TR | Micron Technology Inc. |
Description: IC FLASH 4GBIT SPI 8UPDFN Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 8-UDFN Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 4G x 1 Memory Interface: SPI Supplier Device Package: 8-UPDFN (8x6) (MLP8) Memory Format: FLASH Technology: FLASH - NAND (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MT29F4G01ABAFDWB-IT:F TR | Micron Technology Inc. |
Description: IC FLASH 4GBIT SPI 8UPDFN Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 8-UDFN Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 4G x 1 Memory Interface: SPI Supplier Device Package: 8-UPDFN (8x6) (MLP8) Memory Format: FLASH Technology: FLASH - NAND (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile |
на замовлення 3009 шт: термін постачання 21-31 дні (днів) |
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| MTGAAAA128GD1-AAZCTBYYES | Micron Technology Inc. |
Description: DDR4 128GBYTE/1.125TBIT HRAS E3. Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MTGAAAA128GD1-AA1CTBYY | Micron Technology Inc. |
Description: DDR4 128GBYTE/1.125TBIT HRAS E3. Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MTGAAAA256GD1-AA1CTBYY | Micron Technology Inc. |
Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MTGAAAA256GD1-AAZCTBYYES | Micron Technology Inc. |
Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MTA8ATF1G64HZ-2G3B1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 2400 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MTA8ATF1G64HZ-2G3A1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 2400 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MTA8ATF1G64HZ-2G3E1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 2400 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MT46V128M8TG-6T:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M8P-6T:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M8P-75:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M4FN-6:F TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 60FBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (10x12.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M4TG-6T:F TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M4FN-75:D TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 60FBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (10x12.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M4TG-75:D TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M8TG-75:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46V128M8P-6T IT:A | Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46H128M16LFDD-48 IT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
на замовлення 3046 шт: термін постачання 21-31 дні (днів) |
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MT46H128M16LFDD-48 AIT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Grade: Automotive Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT46H128M16LFDD-48 WT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Write Cycle Time - Word, Page: 14.4ns Supplier Device Package: 60-VFBGA (8x9) Memory Format: DRAM Clock Frequency: 208 MHz Technology: SDRAM - Mobile LPDDR Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -25°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 2Gbit Mounting Type: Surface Mount Package / Case: 60-VFBGA Packaging: Bulk DigiKey Programmable: Not Verified Memory Organization: 128M x 16 Access Time: 5 ns Memory Interface: Parallel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 WT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Bulk DigiKey Programmable: Not Verified Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -25°C ~ 85°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 WT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA DigiKey Programmable: Not Verified Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -25°C ~ 85°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 IT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 4Gbit Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Mounting Type: Surface Mount Package / Case: 200-TFBGA DigiKey Programmable: Not Verified Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 IT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Box DigiKey Programmable: Not Verified Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 AIT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA DigiKey Programmable: Not Verified Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 AIT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA DigiKey Programmable: Not Verified Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Box Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 AAT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Qualification: AEC-Q100 Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA DigiKey Programmable: Not Verified Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 AAT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Qualification: AEC-Q100 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Box DigiKey Programmable: Not Verified Memory Organization: 128M x 32 |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 AUT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Qualification: AEC-Q100 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4X Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 125°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 128M x 32 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E384M32D2FW-046 IT:E TR | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Memory Organization: 384M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4X Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Memory Type: Volatile Memory Size: 12Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E128M32D2FW-046 AUT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA DigiKey Programmable: Not Verified Memory Organization: 128M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 125°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Qualification: AEC-Q100 Packaging: Box |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E384M32D2FW-046 IT:E | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 12Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 384M x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
| MT53E384M32D2FW-046 AIT:E TR | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| MT53E384M32D2FW-046 AIT:E | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Box DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | |||||||||||||||||
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MT53E256M32D2FW-046 AIT:B TR | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E256M32D2FW-046 AIT:B | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E256M32D2FW-046 AAT:B TR | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E256M32D2FW-046 AAT:B | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Technology: SDRAM - Mobile LPDDR4X Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Memory Type: Volatile Memory Size: 8Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Memory Format: DRAM Packaging: Box Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Clock Frequency: 2.133 GHz |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E256M32D2FW-046 AUT:B TR | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Operating Temperature: -40°C ~ 125°C (TC) Memory Type: Volatile Memory Size: 8Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Tape & Reel (TR) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 256M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4X Voltage - Supply: 1.06V ~ 1.17V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT53E256M32D2FW-046 AUT:B | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Package / Case: 200-TFBGA Packaging: Box Memory Organization: 256M x 32 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 125°C (TC) Memory Type: Volatile Memory Size: 8Gbit Mounting Type: Surface Mount Qualification: AEC-Q100 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
| MT53E1G32D2FW-046 WT:C TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Memory Organization: 1G x 32 Memory Interface: Parallel Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gbit Package / Case: 200-TFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| MT53E1G32D2FW-046 WT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Memory Interface: Parallel Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gbit Package / Case: 200-TFBGA Memory Organization: 1G x 32 Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | |||||||||||||||||
| MT53E1G32D2FW-046 IT:C TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Memory Organization: 1G x 32 Memory Interface: Parallel Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gbit Package / Case: 200-TFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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MT53E1G32D2FW-046 IT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Memory Organization: 1G x 32 Memory Interface: Parallel Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gbit Package / Case: 200-TFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||||
 |
MT48H32M16LFB4-6 AT:C TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 54VFBGA Packaging: Tape & Reel (TR) Package / Case: 54-VFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPSDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 54-VFBGA (8x8) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MT40A256M16GE-075E AUT:B TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PARALLEL 96FBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.33 GHz Memory Format: DRAM Supplier Device Package: 96-FBGA (9x14) Grade: Automotive Memory Interface: Parallel Memory Organization: 256M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MTFC8GAMALBH-AIT ES TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 153TFBGA Packaging: Tape & Reel (TR) Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Grade: Automotive Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
 |
MTFC8GAMALNA-AAT | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 100TBGA Packaging: Tray Package / Case: 100-TBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 100-TBGA (14x18) Grade: Automotive Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 980 шт В кошику од. на суму грн. | ||||||||||||||||
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MTFC8GAMALNA-AAT TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 100TBGA Packaging: Tape & Reel (TR) Package / Case: 100-TBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 100-TBGA (14x18) Grade: Automotive Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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MTFC8GAMALBH-AAT ES TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 153TFBGA Packaging: Tape & Reel (TR) Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Grade: Automotive Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
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MTFC8GAMALNA-AAT ES TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 100TBGA Packaging: Tape & Reel (TR) Package / Case: 100-TBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 100-TBGA (14x18) Grade: Automotive Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| N2M400GDB321A3CF TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 52MHZ Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 52 MHz Memory Format: FLASH Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| EDF8164A3MC-GD-F-R TR | Micron Technology Inc. |
Description: IC DRAM 8GBIT PARALLEL 800MHZ Packaging: Tape & Reel (TR) Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 800 MHz Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| EDF8164A3PK-JD-F-D | Micron Technology Inc. |
Description: IC DRAM 8GBIT PAR 216FBGA Packaging: Tray Package / Case: 216-WFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 216-FBGA (12x12) Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| EDF8164A3PK-JD-F-R | Micron Technology Inc. |
Description: IC DRAM 8GBIT PAR 216FBGA Packaging: Tape & Reel (TR) Package / Case: 216-WFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 216-FBGA (12x12) Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| EDF8164A3MD-GD-F-R | Micron Technology Inc. |
Description: IC DRAM 8GBIT PARALLEL 800MHZ Packaging: Bulk Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 800 MHz Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MTFDKBA256TFK-1BC1AABYY TR | Micron Technology Inc. |
Description: IC SSD FLASH 256GB PCIE Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| MTFDKBA256TFK-1BC15ABYY TR | Micron Technology Inc. |
Description: IC SSD FLASH 256GB PCIE Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| MT46H16M32LFCM-5 IT:B |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| MT29F4G01ABAFDWB-IT:F TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 191.40 грн |
| MT29F4G01ABAFDWB-IT:F TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
на замовлення 3009 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 228.33 грн |
| 10+ | 205.36 грн |
| 25+ | 199.32 грн |
| 50+ | 182.75 грн |
| 100+ | 178.44 грн |
| 250+ | 172.76 грн |
| 500+ | 165.74 грн |
| 1000+ | 162.94 грн |
| MTGAAAA128GD1-AAZCTBYYES |
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MTGAAAA128GD1-AA1CTBYY |
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MTGAAAA256GD1-AA1CTBYY |
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MTGAAAA256GD1-AAZCTBYYES |
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MTA8ATF1G64HZ-2G3B1 |
|
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
товару немає в наявності
В кошику
од. на суму грн.
| MTA8ATF1G64HZ-2G3A1 |
|
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
товару немає в наявності
В кошику
од. на суму грн.
| MTA8ATF1G64HZ-2G3E1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
товару немає в наявності
В кошику
од. на суму грн.
| MT46V128M8TG-6T:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MT46V128M8P-6T:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| MT46V128M8P-75:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| MT46V128M4FN-6:F TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
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| MT46V128M4TG-6T:F TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
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| MT46V128M4FN-75:D TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
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| MT46V128M4TG-75:D TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
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од. на суму грн.
| MT46V128M8TG-75:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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| MT46V128M8P-6T IT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| MT46H128M16LFDD-48 IT:C |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
на замовлення 3046 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 868.28 грн |
| 10+ | 774.79 грн |
| 25+ | 757.23 грн |
| 50+ | 706.83 грн |
| 100+ | 622.22 грн |
| 250+ | 591.35 грн |
| 500+ | 575.83 грн |
| MT46H128M16LFDD-48 AIT:C |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| MT46H128M16LFDD-48 WT:C |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Write Cycle Time - Word, Page: 14.4ns
Supplier Device Package: 60-VFBGA (8x9)
Memory Format: DRAM
Clock Frequency: 208 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 16
Access Time: 5 ns
Memory Interface: Parallel
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Write Cycle Time - Word, Page: 14.4ns
Supplier Device Package: 60-VFBGA (8x9)
Memory Format: DRAM
Clock Frequency: 208 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 16
Access Time: 5 ns
Memory Interface: Parallel
товару немає в наявності
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 WT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 WT:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 IT:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Description: IC DRAM 4GBIT PAR 200TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 IT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 AIT:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Description: IC DRAM 4GBIT PAR 200TFBGA
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 AIT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 AAT:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 AAT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 AUT:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E384M32D2FW-046 IT:E TR |
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Memory Organization: 384M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 12Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Memory Organization: 384M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 12Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E128M32D2FW-046 AUT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Qualification: AEC-Q100
Packaging: Box
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Qualification: AEC-Q100
Packaging: Box
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E384M32D2FW-046 IT:E |
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E384M32D2FW-046 AIT:E TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E384M32D2FW-046 AIT:E |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E256M32D2FW-046 AIT:B TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E256M32D2FW-046 AIT:B |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E256M32D2FW-046 AAT:B TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E256M32D2FW-046 AAT:B |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Memory Format: DRAM
Packaging: Box
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Clock Frequency: 2.133 GHz
Description: LPDDR4 8G 256MX32 FBGA DDP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Memory Format: DRAM
Packaging: Box
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Clock Frequency: 2.133 GHz
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E256M32D2FW-046 AUT:B TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Description: LPDDR4 8G 256MX32 FBGA DDP
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E256M32D2FW-046 AUT:B |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Package / Case: 200-TFBGA
Packaging: Box
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Description: LPDDR4 8G 256MX32 FBGA DDP
Package / Case: 200-TFBGA
Packaging: Box
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E1G32D2FW-046 WT:C TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E1G32D2FW-046 WT:C |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Memory Organization: 1G x 32
Packaging: Tray
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Memory Organization: 1G x 32
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E1G32D2FW-046 IT:C TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MT53E1G32D2FW-046 IT:C |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tray
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT48H32M16LFB4-6 AT:C TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| MT40A256M16GE-075E AUT:B TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| MTFC8GAMALBH-AIT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MTFC8GAMALNA-AAT |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tray
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tray
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 980 шт
В кошику
од. на суму грн.
| MTFC8GAMALNA-AAT TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MTFC8GAMALBH-AAT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MTFC8GAMALNA-AAT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| N2M400GDB321A3CF TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 52MHZ
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 52 MHz
Memory Format: FLASH
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT MMC 52MHZ
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 52 MHz
Memory Format: FLASH
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| EDF8164A3MC-GD-F-R TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Tape & Reel (TR)
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Tape & Reel (TR)
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| EDF8164A3PK-JD-F-D |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tray
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tray
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| EDF8164A3PK-JD-F-R |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tape & Reel (TR)
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tape & Reel (TR)
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
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од. на суму грн.
| EDF8164A3MD-GD-F-R |
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Bulk
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Bulk
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
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| MTFDKBA256TFK-1BC1AABYY TR |
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MTFDKBA256TFK-1BC15ABYY TR |
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.