Продукція > B1D
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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| B1D05120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Max. forward impulse current: 60A Kind of package: reel; tape Power dissipation: 53W Leakage current: 10µA | товару немає в наявності | В кошику од. на суму грн. | ||||||
| B1D06065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 6A; reel,tape Diode: Schottky rectifying Case: TO263-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.73V Leakage current: 20µA Max. forward impulse current: 45A Kind of package: reel; tape Power dissipation: 38W | товару немає в наявності | В кошику од. на суму грн. | ||||||
| B1D06065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 6A Max. forward impulse current: 45A Power dissipation: 30W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Diode: Schottky rectifying | на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| B1D08065F | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Diode: Schottky rectifying Case: TO263-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.75V Leakage current: 10µA Max. forward impulse current: 60A Kind of package: reel; tape Power dissipation: 48W | товару немає в наявності | В кошику од. на суму грн. | ||||||
| B1D08065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W | на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| B1D08065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W | на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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| B1D10065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-2; Ir: 20uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 68W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Diode: Schottky rectifying | на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| B1D10065KS | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Diode: Schottky rectifying | на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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| B1D10120E | BASiC SEMICONDUCTOR | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 62W | товару немає в наявності | В кошику од. на суму грн. | ||||||
| B1D15065K | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 112A Leakage current: 10µA Kind of package: tube Power dissipation: 84W | на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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| B1D16065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. load current: 16A Max. forward impulse current: 60A Leakage current: 10µA Power dissipation: 73W Kind of package: tube | на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| B1D20065HC | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Diode: Schottky rectifying | на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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| B1D40065H | BASiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W | на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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