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BGS67A,112 BGS67A,112 NXP USA Inc. BGS67A.pdf Description: IC AMP CATV DMAN8
Packaging: Bulk
Package / Case: SOT-567A
Mounting Type: Surface Mount
Applications: CATV
Supplier Device Package: DMAN8
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 95 mA
товар відсутній
BGY66B,112 BGY66B,112 NXP USA Inc. BGY66B.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 135 mA
товар відсутній
BGY67,112 BGY67,112 NXP USA Inc. BGY67.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 215 mA
товар відсутній
BGY67A,112 BGY67A,112 NXP USA Inc. BGY67A.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 215 mA
товар відсутній
BGY68,112 BGY68,112 NXP USA Inc. BGY68.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 135 mA
товар відсутній
TDA9801/V1,112 TDA9801/V1,112 NXP USA Inc. TDA9801.pdf Description: RF DEMODULATOR IC 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Demodulator, Detector
Voltage - Supply: 4.5V ~ 9.9V
Supplier Device Package: 20-DIP
Part Status: Obsolete
Current - Supply: 70 mA
товар відсутній
TDA9801T/V1,118 TDA9801T/V1,118 NXP USA Inc. TDA9801.pdf Description: RF DEMODULATOR IC 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Demodulator, Detector
Voltage - Supply: 4.5V ~ 9.9V
Supplier Device Package: 20-SO
Part Status: Obsolete
Current - Supply: 70 mA
товар відсутній
TDA9818T/V1,118 TDA9818T/V1,118 NXP USA Inc. TDA9817,18.pdf Description: IC VIDEO DEMODULATOR 24SO
товар відсутній
TDA9830/V1,112 TDA9830/V1,112 NXP USA Inc. TDA9830.pdf Description: IC VIDEO DEMODULATOR 16DIP
товар відсутній
TDA9830T/V1,112 TDA9830T/V1,112 NXP USA Inc. TDA9830.pdf Description: IC TV SOUND AM-DEMOD 16-SOIC
товар відсутній
TDA9852H/V2,557 TDA9852H/V2,557 NXP USA Inc. TDA9852_2.pdf Description: IC AUDIO SIGNAL PROCESSOR 44PQFP
товар відсутній
TDA9855/V2,112 NXP USA Inc. TDA9855_3.pdf Description: IC AUDIO SIGNAL PROCESSOR 52SDIP
товар відсутній
TDA9860/V2,112 NXP USA Inc. TDA9860.pdf Description: IC AUDIO SIGNAL PROCESSOR 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Function: Audio Signal Processor
Interface: I2C
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 7.2V ~ 8.8V
Specifications: -63dB
Applications: Consumer Audio
Supplier Device Package: 32-SDIP
Number of Channels: 2
товар відсутній
TDA9874AH/V2,557 TDA9874AH/V2,557 NXP USA Inc. TDA9874A.pdf Description: IC DEMODULATOR 44QFP
товар відсутній
TEA1062A/C4/M1,112 TEA1062A/C4/M1,112 NXP USA Inc. TEA1062.pdf Description: IC TELECOM INTERFACE 16DIP
товар відсутній
TEA1062AT/C4,112 TEA1062AT/C4,112 NXP USA Inc. TEA1062.pdf Description: IC TELECOM INTERFACE 16SO
товар відсутній
TEA6101T/N2,112 TEA6101T/N2,112 NXP USA Inc. TEA6101_T_CNV_2.pdf Description: IC ANTENNA DIVERSITY 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Antenna Diversity
RF Type: Broadcast Radio
Supplier Device Package: 20-SO
товар відсутній
TEA6324T/V1,518 TEA6324T/V1,518 NXP USA Inc. TEA6324T.pdf Description: IC VOLUME CONTROL 24SO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Volume Control
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 7.5V ~ 9.5V
Specifications: 110dB, 20dB
Applications: Pre-Amplifier
Supplier Device Package: 24-SO
Number of Channels: 2
товар відсутній
TEA6360T/V2,512 TEA6360T/V2,512 NXP USA Inc. TEA6360.pdf Description: IC AUDIO TONE PROCESSOR 32SO
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Audio Tone Processor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 7V ~ 13.2V
Specifications: 5-Band
Applications: Audio
Supplier Device Package: 32-SO
Part Status: Obsolete
Number of Channels: 2
Grade: Automotive
товар відсутній
TEA6810V/C03,118 TEA6810V/C03,118 NXP USA Inc. TEA6810V,TEA6811V.pdf Description: RF RECEIVER AM/FM 40VSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Applications: AM/FM Car Radios
Current - Receiving: 35mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 40-VSO
Part Status: Obsolete
товар відсутній
TEA6811V/C03,112 TEA6811V/C03,112 NXP USA Inc. TEA6810V,TEA6811V.pdf Description: RF RECEIVER AM/FM 40VSOP
Packaging: Tube
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Applications: AM/FM Car Radios
Current - Receiving: 35mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 40-VSO
Part Status: Obsolete
товар відсутній
TEA6825T/V1,118 TEA6825T/V1,118 NXP USA Inc. TEA6823,6825T.pdf Description: RF RECEIVER AM/FM 56VSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-BSOP (0.435", 11.05mm Width)
Mounting Type: Surface Mount
Frequency: AM, FM, WB
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: In Car Entertainment (ICE) Car Radio
Current - Receiving: 39mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 56-VSO
Part Status: Obsolete
товар відсутній
TEA6880H/V2,518 TEA6880H/V2,518 NXP USA Inc. TEA6880H.pdf Description: IC AUDIO TONE PROCESSOR 64QFP
товар відсутній
BGY883,112 BGY883,112 NXP USA Inc. BGY883.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 235 mA
товар відсутній
BGY885A,112 BGY885A,112 NXP USA Inc. BGY885A.pdf Description: IC AMP CATV SOT115J
товар відсутній
BGY885B,112 BGY885B,112 NXP USA Inc. BGY885B.pdf Description: IC AMP CATV SOT115J
товар відсутній
BGY887,112 BGY887,112 NXP USA Inc. BGY887.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 220 mA
товар відсутній
CGD923,112 NXP USA Inc. CGD923.pdf Description: IC AMP CATV SOT115AE
Packaging: Bulk
Package / Case: SOT-115AE
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115AE
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 475 mA
товар відсутній
BUK218-50DC,118 BUK218-50DC,118 NXP USA Inc. BUK218-50DC.pdf Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 35V
Supplier Device Package: D2PAK-7
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 3V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
товар відсутній
BUK218-50DY,118 BUK218-50DY,118 NXP USA Inc. BUK218-50DY_1.pdf Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 35V
Supplier Device Package: D2PAK-7
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 3V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
товар відсутній
BUK7506-55B,127 BUK7506-55B,127 NXP USA Inc. BUK7506-55B.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товар відсутній
BUK7506-75B,127 BUK7506-75B,127 NXP USA Inc. BUK7506-75B.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7446 pF @ 25 V
товар відсутній
BUK75150-55A,127 BUK75150-55A,127 NXP USA Inc. BUK75,76150-55A.pdf Description: MOSFET N-CH 55V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
товар відсутній
BUK7523-75A,127 BUK7523-75A,127 NXP USA Inc. BUK7523-75A.pdf Description: MOSFET N-CH 75V 53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
товар відсутній
BUK7524-55A,127 BUK7524-55A,127 NXP USA Inc. BUK7524,7624_55A.pdf Description: MOSFET N-CH 55V 47A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
товар відсутній
BUK752R7-30B,127 BUK752R7-30B,127 NXP USA Inc. BUK752R7-30B.pdf Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6212 pF @ 25 V
товар відсутній
BUK753R1-40B,127 BUK753R1-40B,127 NXP USA Inc. Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
товар відсутній
BUK754R3-40B,127 BUK754R3-40B,127 NXP USA Inc. BUK754R3-40B.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
товар відсутній
BUK76150-55A,118 BUK76150-55A,118 NXP USA Inc. BUK75,76150-55A.pdf Description: MOSFET N-CH 55V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
товар відсутній
BUK7624-55A,118 BUK7624-55A,118 NXP USA Inc. BUK7524%2C7624_55A.pdf Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK7628-55A,118 BUK7628-55A,118 NXP USA Inc. BUK7528-55A.pdf Description: MOSFET N-CH 55V 42A D2PAK
товар відсутній
BUK764R3-40B,118 BUK764R3-40B,118 NXP USA Inc. BUK764R3-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
товар відсутній
BUK794R1-40BT,127 BUK794R1-40BT,127 NXP USA Inc. Description: MOSFET N-CH 40V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
товар відсутній
BUK7E11-55B,127 BUK7E11-55B,127 NXP USA Inc. BUK7E11-55B.pdf Description: MOSFET N-CH 55V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
товар відсутній
BUK7L06-34ARC,127 BUK7L06-34ARC,127 NXP USA Inc. BUK7L06-34ARC_4.pdf Description: MOSFET N-CH 34V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 25 V
товар відсутній
BUK7L11-34ARC,127 BUK7L11-34ARC,127 NXP USA Inc. BUK7L11-34ARC_4.pdf Description: MOSFET N-CH 34V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 25 V
товар відсутній
BUK9506-55B,127 BUK9506-55B,127 NXP USA Inc. BUK9506-55B.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Power Dissipation (Max): 258W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
товар відсутній
BUK9509-55A,127 BUK9509-55A,127 NXP USA Inc. BUK95_9609_55A-01.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4633 pF @ 25 V
товар відсутній
BUK9509-75A,127 BUK9509-75A,127 NXP USA Inc. BUK9609-75A.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
товар відсутній
BUK95150-55A,127 BUK95150-55A,127 NXP USA Inc. BUK9(5,6)150-55A.pdf Description: MOSFET N-CH 55V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V
товар відсутній
BUK9516-55A,127 BUK9516-55A,127 NXP USA Inc. BUK9516-55A.pdf Description: MOSFET N-CH 55V 66A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3085 pF @ 25 V
товар відсутній
BUK9516-75B,127 BUK9516-75B,127 NXP USA Inc. BUK9516-75B.pdf Description: MOSFET N-CH 75V 67A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
товар відсутній
BUK95180-100A,127 BUK95180-100A,127 NXP USA Inc. BUK95180-100A.pdf Description: MOSFET N-CH 100V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
товар відсутній
BUK9520-55A,127 BUK9520-55A,127 NXP USA Inc. BUK9520-55A.pdf Description: MOSFET N-CH 55V 54A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
BUK9524-55A,127 BUK9524-55A,127 NXP USA Inc. BUK9524-55A.pdf Description: MOSFET N-CH 55V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
товар відсутній
BUK9528-55A,127 BUK9528-55A,127 NXP USA Inc. BUK9528_9628_55A-01.pdf Description: MOSFET N-CH 55V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 5V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
BUK9609-55A,118 BUK9609-55A,118 NXP USA Inc. BUK95_9609_55A-01.pdf Description: MOSFET N-CH 55V 75A D2PAK
товар відсутній
BUK96150-55A,118 BUK96150-55A,118 NXP USA Inc. BUK9%285%2C6%29150-55A.pdf Description: MOSFET N-CH 55V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V
товар відсутній
BUK9623-75A,118 BUK9623-75A,118 NXP USA Inc. BUK9623-75A.pdf Description: MOSFET N-CH 75V 53A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
товар відсутній
BUK98150-55,135 BUK98150-55,135 NXP USA Inc. BUK98150-55.pdf Description: MOSFET N-CH 55V 5.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товар відсутній
BGS67A,112 BGS67A.pdf
BGS67A,112
Виробник: NXP USA Inc.
Description: IC AMP CATV DMAN8
Packaging: Bulk
Package / Case: SOT-567A
Mounting Type: Surface Mount
Applications: CATV
Supplier Device Package: DMAN8
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 95 mA
товар відсутній
BGY66B,112 BGY66B.pdf
BGY66B,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 135 mA
товар відсутній
BGY67,112 BGY67.pdf
BGY67,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 215 mA
товар відсутній
BGY67A,112 BGY67A.pdf
BGY67A,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 215 mA
товар відсутній
BGY68,112 BGY68.pdf
BGY68,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 135 mA
товар відсутній
TDA9801/V1,112 TDA9801.pdf
TDA9801/V1,112
Виробник: NXP USA Inc.
Description: RF DEMODULATOR IC 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Demodulator, Detector
Voltage - Supply: 4.5V ~ 9.9V
Supplier Device Package: 20-DIP
Part Status: Obsolete
Current - Supply: 70 mA
товар відсутній
TDA9801T/V1,118 TDA9801.pdf
TDA9801T/V1,118
Виробник: NXP USA Inc.
Description: RF DEMODULATOR IC 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Demodulator, Detector
Voltage - Supply: 4.5V ~ 9.9V
Supplier Device Package: 20-SO
Part Status: Obsolete
Current - Supply: 70 mA
товар відсутній
TDA9818T/V1,118 TDA9817,18.pdf
TDA9818T/V1,118
Виробник: NXP USA Inc.
Description: IC VIDEO DEMODULATOR 24SO
товар відсутній
TDA9830/V1,112 TDA9830.pdf
TDA9830/V1,112
Виробник: NXP USA Inc.
Description: IC VIDEO DEMODULATOR 16DIP
товар відсутній
TDA9830T/V1,112 TDA9830.pdf
TDA9830T/V1,112
Виробник: NXP USA Inc.
Description: IC TV SOUND AM-DEMOD 16-SOIC
товар відсутній
TDA9852H/V2,557 TDA9852_2.pdf
TDA9852H/V2,557
Виробник: NXP USA Inc.
Description: IC AUDIO SIGNAL PROCESSOR 44PQFP
товар відсутній
TDA9855/V2,112 TDA9855_3.pdf
Виробник: NXP USA Inc.
Description: IC AUDIO SIGNAL PROCESSOR 52SDIP
товар відсутній
TDA9860/V2,112 TDA9860.pdf
Виробник: NXP USA Inc.
Description: IC AUDIO SIGNAL PROCESSOR 32SDIP
Packaging: Tube
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Function: Audio Signal Processor
Interface: I2C
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 7.2V ~ 8.8V
Specifications: -63dB
Applications: Consumer Audio
Supplier Device Package: 32-SDIP
Number of Channels: 2
товар відсутній
TDA9874AH/V2,557 TDA9874A.pdf
TDA9874AH/V2,557
Виробник: NXP USA Inc.
Description: IC DEMODULATOR 44QFP
товар відсутній
TEA1062A/C4/M1,112 TEA1062.pdf
TEA1062A/C4/M1,112
Виробник: NXP USA Inc.
Description: IC TELECOM INTERFACE 16DIP
товар відсутній
TEA1062AT/C4,112 TEA1062.pdf
TEA1062AT/C4,112
Виробник: NXP USA Inc.
Description: IC TELECOM INTERFACE 16SO
товар відсутній
TEA6101T/N2,112 TEA6101_T_CNV_2.pdf
TEA6101T/N2,112
Виробник: NXP USA Inc.
Description: IC ANTENNA DIVERSITY 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Antenna Diversity
RF Type: Broadcast Radio
Supplier Device Package: 20-SO
товар відсутній
TEA6324T/V1,518 TEA6324T.pdf
TEA6324T/V1,518
Виробник: NXP USA Inc.
Description: IC VOLUME CONTROL 24SO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Volume Control
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 7.5V ~ 9.5V
Specifications: 110dB, 20dB
Applications: Pre-Amplifier
Supplier Device Package: 24-SO
Number of Channels: 2
товар відсутній
TEA6360T/V2,512 TEA6360.pdf
TEA6360T/V2,512
Виробник: NXP USA Inc.
Description: IC AUDIO TONE PROCESSOR 32SO
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Audio Tone Processor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 7V ~ 13.2V
Specifications: 5-Band
Applications: Audio
Supplier Device Package: 32-SO
Part Status: Obsolete
Number of Channels: 2
Grade: Automotive
товар відсутній
TEA6810V/C03,118 TEA6810V,TEA6811V.pdf
TEA6810V/C03,118
Виробник: NXP USA Inc.
Description: RF RECEIVER AM/FM 40VSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Applications: AM/FM Car Radios
Current - Receiving: 35mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 40-VSO
Part Status: Obsolete
товар відсутній
TEA6811V/C03,112 TEA6810V,TEA6811V.pdf
TEA6811V/C03,112
Виробник: NXP USA Inc.
Description: RF RECEIVER AM/FM 40VSOP
Packaging: Tube
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Applications: AM/FM Car Radios
Current - Receiving: 35mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 40-VSO
Part Status: Obsolete
товар відсутній
TEA6825T/V1,118 TEA6823,6825T.pdf
TEA6825T/V1,118
Виробник: NXP USA Inc.
Description: RF RECEIVER AM/FM 56VSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-BSOP (0.435", 11.05mm Width)
Mounting Type: Surface Mount
Frequency: AM, FM, WB
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: In Car Entertainment (ICE) Car Radio
Current - Receiving: 39mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 56-VSO
Part Status: Obsolete
товар відсутній
TEA6880H/V2,518 TEA6880H.pdf
TEA6880H/V2,518
Виробник: NXP USA Inc.
Description: IC AUDIO TONE PROCESSOR 64QFP
товар відсутній
BGY883,112 BGY883.pdf
BGY883,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 235 mA
товар відсутній
BGY885A,112 BGY885A.pdf
BGY885A,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
товар відсутній
BGY885B,112 BGY885B.pdf
BGY885B,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
товар відсутній
BGY887,112 BGY887.pdf
BGY887,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 220 mA
товар відсутній
CGD923,112 CGD923.pdf
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115AE
Packaging: Bulk
Package / Case: SOT-115AE
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115AE
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 475 mA
товар відсутній
BUK218-50DC,118 BUK218-50DC.pdf
BUK218-50DC,118
Виробник: NXP USA Inc.
Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 35V
Supplier Device Package: D2PAK-7
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 3V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
товар відсутній
BUK218-50DY,118 BUK218-50DY_1.pdf
BUK218-50DY,118
Виробник: NXP USA Inc.
Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 35V
Supplier Device Package: D2PAK-7
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 3V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
товар відсутній
BUK7506-55B,127 BUK7506-55B.pdf
BUK7506-55B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товар відсутній
BUK7506-75B,127 BUK7506-75B.pdf
BUK7506-75B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7446 pF @ 25 V
товар відсутній
BUK75150-55A,127 BUK75,76150-55A.pdf
BUK75150-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
товар відсутній
BUK7523-75A,127 BUK7523-75A.pdf
BUK7523-75A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
товар відсутній
BUK7524-55A,127 BUK7524,7624_55A.pdf
BUK7524-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 47A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
товар відсутній
BUK752R7-30B,127 BUK752R7-30B.pdf
BUK752R7-30B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6212 pF @ 25 V
товар відсутній
BUK753R1-40B,127
BUK753R1-40B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
товар відсутній
BUK754R3-40B,127 BUK754R3-40B.pdf
BUK754R3-40B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
товар відсутній
BUK76150-55A,118 BUK75,76150-55A.pdf
BUK76150-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
товар відсутній
BUK7624-55A,118 BUK7524%2C7624_55A.pdf
BUK7624-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 47A D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK7628-55A,118 BUK7528-55A.pdf
BUK7628-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 42A D2PAK
товар відсутній
BUK764R3-40B,118 BUK764R3-40B.pdf
BUK764R3-40B,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
товар відсутній
BUK794R1-40BT,127
BUK794R1-40BT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
товар відсутній
BUK7E11-55B,127 BUK7E11-55B.pdf
BUK7E11-55B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
товар відсутній
BUK7L06-34ARC,127 BUK7L06-34ARC_4.pdf
BUK7L06-34ARC,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 34V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 25 V
товар відсутній
BUK7L11-34ARC,127 BUK7L11-34ARC_4.pdf
BUK7L11-34ARC,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 34V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 25 V
товар відсутній
BUK9506-55B,127 BUK9506-55B.pdf
BUK9506-55B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Power Dissipation (Max): 258W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
товар відсутній
BUK9509-55A,127 BUK95_9609_55A-01.pdf
BUK9509-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4633 pF @ 25 V
товар відсутній
BUK9509-75A,127 BUK9609-75A.pdf
BUK9509-75A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
товар відсутній
BUK95150-55A,127 BUK9(5,6)150-55A.pdf
BUK95150-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V
товар відсутній
BUK9516-55A,127 BUK9516-55A.pdf
BUK9516-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 66A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3085 pF @ 25 V
товар відсутній
BUK9516-75B,127 BUK9516-75B.pdf
BUK9516-75B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 67A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
товар відсутній
BUK95180-100A,127 BUK95180-100A.pdf
BUK95180-100A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
товар відсутній
BUK9520-55A,127 BUK9520-55A.pdf
BUK9520-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 54A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
BUK9524-55A,127 BUK9524-55A.pdf
BUK9524-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
товар відсутній
BUK9528-55A,127 BUK9528_9628_55A-01.pdf
BUK9528-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 5V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товар відсутній
BUK9609-55A,118 BUK95_9609_55A-01.pdf
BUK9609-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
товар відсутній
BUK96150-55A,118 BUK9%285%2C6%29150-55A.pdf
BUK96150-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V
товар відсутній
BUK9623-75A,118 BUK9623-75A.pdf
BUK9623-75A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 53A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
товар відсутній
BUK98150-55,135 BUK98150-55.pdf
BUK98150-55,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товар відсутній
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