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TDA9830T/V1,112 TDA9830T/V1,112 NXP USA Inc. TDA9830.pdf Description: IC VIDEO DEMODULATOR 16SO
Supplier Device Package: 16-SO
Applications: Consumer Video
Voltage - Supply: 4.5V ~ 8.8V, 10.8V ~ 13.2V
Function: Demodulator
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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TDA9852H/V2,557 TDA9852H/V2,557 NXP USA Inc. TDA9852_2.pdf Description: IC AUDIO SIGNAL PROCESSOR 44PQFP
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TDA9855/V2,112 NXP USA Inc. TDA9855_3.pdf Description: IC AUDIO SIGNAL PROCESSOR 52SDIP
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TDA9860/V2,112 NXP USA Inc. TDA9860.pdf Description: IC AUDIO SIGNAL PROCESSOR 32SDIP
Number of Channels: 2
Supplier Device Package: 32-SDIP
Applications: Consumer Audio
Specifications: -63dB
Voltage - Supply: 7.2V ~ 8.8V
Operating Temperature: 0°C ~ 70°C (TA)
Interface: I2C
Function: Audio Signal Processor
Mounting Type: Through Hole
Package / Case: 32-SDIP (0.400", 10.16mm)
Packaging: Tube
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TDA9874AH/V2,557 TDA9874AH/V2,557 NXP USA Inc. TDA9874A.pdf Description: IC DEMODULATOR 44QFP
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TEA1062A/C4/M1,112 TEA1062A/C4/M1,112 NXP USA Inc. TEA1062.pdf Description: IC TELECOM INTERFACE 16DIP
Power (Watts): 666 mW
Number of Circuits: 1
Supplier Device Package: 16-DIP
Current - Supply: 900µA
Voltage - Supply: 3.4V
Operating Temperature: -25°C ~ 75°C
Function: Low Voltage Transmission
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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TEA1062AT/C4,112 TEA1062AT/C4,112 NXP USA Inc. TEA1062.pdf Description: IC TELECOM INTERFACE 16SO
Power (Watts): 454 mW
Number of Circuits: 1
Supplier Device Package: 16-SO
Current - Supply: 900µA
Voltage - Supply: 3.4V
Operating Temperature: -25°C ~ 75°C
Function: Low Voltage Transmission
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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TEA6101T/N2,112 TEA6101T/N2,112 NXP USA Inc. TEA6101_T_CNV_2.pdf Description: IC ANTENNA DIVERSITY 20-SOIC
Supplier Device Package: 20-SO
RF Type: Broadcast Radio
Function: Antenna Diversity
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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TEA6324T/V1,518 TEA6324T/V1,518 NXP USA Inc. TEA6324T.pdf Description: IC VOLUME CONTROL 24SO
Number of Channels: 2
Supplier Device Package: 24-SO
Applications: Pre-Amplifier
Specifications: 110dB, 20dB
Voltage - Supply: 7.5V ~ 9.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Volume Control
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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TEA6360T/V2,512 TEA6360T/V2,512 NXP USA Inc. TEA6360.pdf Description: IC AUDIO TONE PROCESSOR 32SO
Number of Channels: 2
Part Status: Obsolete
Supplier Device Package: 32-SO
Applications: Audio
Specifications: 5-Band
Voltage - Supply: 7V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Audio Tone Processor
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Grade: Automotive
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TEA6810V/C03,118 TEA6810V/C03,118 NXP USA Inc. TEA6810V%2CTEA6811V.pdf Description: RF RECEIVER AM/FM 40VSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Applications: AM/FM Car Radios
Current - Receiving: 35mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 40-VSO
Part Status: Obsolete
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TEA6811V/C03,112 TEA6811V/C03,112 NXP USA Inc. TEA6810V,TEA6811V.pdf Description: RF RECEIVER AM/FM 40VSOP
Applications: AM/FM Car Radios
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: AM, FM
Mounting Type: Surface Mount
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 40-VSO
Antenna Connector: PCB, Surface Mount
Current - Receiving: 35mA
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TEA6825T/V1,118 TEA6825T/V1,118 NXP USA Inc. TEA6823%2C6825T.pdf Description: RF RECEIVER AM/FM 56VSOP
Part Status: Obsolete
Supplier Device Package: 56-VSO
Antenna Connector: PCB, Surface Mount
Current - Receiving: 39mA
Applications: In Car Entertainment (ICE) Car Radio
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: AM, FM
Frequency: AM, FM, WB
Mounting Type: Surface Mount
Package / Case: 56-BSOP (0.435", 11.05mm Width)
Packaging: Tape & Reel (TR)
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TEA6880H/V2,518 TEA6880H/V2,518 NXP USA Inc. TEA6880H.pdf Description: IC AUDIO TONE PROCESSOR 64QFP
Number of Channels: 6
Grade: Automotive
Supplier Device Package: 64-QFP (14x20)
Applications: Audio
Specifications: AM, FM
Voltage - Supply: 7.8V ~ 9.2V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Audio Tone Processor
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tape & Reel (TR)
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BGY883,112 BGY883,112 NXP USA Inc. BGY883.pdf Description: IC AMP CATV SOT115J
Current - Supply: 235 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY885A,112 BGY885A,112 NXP USA Inc. BGY885A.pdf Description: IC AMP CATV SOT115J
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BGY885B,112 BGY885B,112 NXP USA Inc. BGY885B.pdf Description: IC AMP CATV SOT115J
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BGY887,112 BGY887,112 NXP USA Inc. BGY887.pdf Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 220 mA
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CGD923,112 NXP USA Inc. CGD923.pdf Description: IC AMP CATV SOT115AE
Packaging: Bulk
Package / Case: SOT-115AE
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115AE
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 475 mA
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BUK218-50DC,118 BUK218-50DC,118 NXP USA Inc. BUK218-50DC.pdf Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Supplier Device Package: D2PAK-7
Voltage - Supply: 5.5V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 8A, 8A
Logic Voltage - VIL, VIH: 1.2V, 3V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
DigiKey Programmable: Not Verified
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BUK218-50DY,118 BUK218-50DY,118 NXP USA Inc. BUK218-50DY_1.pdf Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Logic Voltage - VIL, VIH: 1.2V, 3V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
Supplier Device Package: D2PAK-7
Voltage - Supply: 5.5V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 8A, 8A
DigiKey Programmable: Not Verified
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BUK7506-55B,127 BUK7506-55B,127 NXP USA Inc. BUK7506-55B.pdf Description: MOSFET N-CH 55V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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BUK7506-75B,127 BUK7506-75B,127 NXP USA Inc. BUK7506-75B.pdf Description: MOSFET N-CH 75V 75A TO220AB
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
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BUK75150-55A,127 BUK75150-55A,127 NXP USA Inc. BUK75%2C76150-55A.pdf Description: MOSFET N-CH 55V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK7523-75A,127 BUK7523-75A,127 NXP USA Inc. BUK7523-75A.pdf Description: MOSFET N-CH 75V 53A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK7524-55A,127 BUK7524-55A,127 NXP USA Inc. BUK7524%2C7624_55A.pdf Description: MOSFET N-CH 55V 47A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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BUK752R7-30B,127 BUK752R7-30B,127 NXP USA Inc. BUK752R7-30B.pdf Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6212 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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BUK753R1-40B,127 BUK753R1-40B,127 NXP USA Inc. Description: MOSFET N-CH 40V 75A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
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BUK754R3-40B,127 BUK754R3-40B,127 NXP USA Inc. BUK754R3-40B.pdf Description: MOSFET N-CH 40V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK76150-55A,118 BUK76150-55A,118 NXP USA Inc. BUK75,76150-55A.pdf Description: MOSFET N-CH 55V 11A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
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BUK7624-55A,118 BUK7624-55A,118 NXP USA Inc. BUK7524%2C7624_55A.pdf Description: MOSFET N-CH 55V 47A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
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BUK7628-55A,118 BUK7628-55A,118 NXP USA Inc. BUK7528-55A.pdf Description: MOSFET N-CH 55V 42A D2PAK
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BUK764R3-40B,118 BUK764R3-40B,118 NXP USA Inc. BUK764R3-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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BUK794R1-40BT,127 BUK794R1-40BT,127 NXP USA Inc. Description: MOSFET N-CH 40V 75A TO220-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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BUK7L06-34ARC,127 BUK7L06-34ARC,127 NXP USA Inc. BUK7L06-34ARC_4.pdf Description: MOSFET N-CH 34V 75A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 25 V
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BUK7L11-34ARC,127 BUK7L11-34ARC,127 NXP USA Inc. BUK7L11-34ARC_4.pdf Description: MOSFET N-CH 34V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9506-55B,127 BUK9506-55B,127 NXP USA Inc. BUK9506-55B.pdf Description: MOSFET N-CH 55V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9509-55A,127 BUK9509-55A,127 NXP USA Inc. BUK95_9609_55A-01.pdf Description: MOSFET N-CH 55V 75A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9509-75A,127 BUK9509-75A,127 NXP USA Inc. BUK9609-75A.pdf Description: MOSFET N-CH 75V 75A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9516-55A,127 BUK9516-55A,127 NXP USA Inc. BUK9516-55A.pdf Description: MOSFET N-CH 55V 66A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3085 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9516-75B,127 BUK9516-75B,127 NXP USA Inc. BUK9516-75B.pdf Description: MOSFET N-CH 75V 67A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK95180-100A,127 BUK95180-100A,127 NXP USA Inc. BUK95180-100A.pdf Description: MOSFET N-CH 100V 11A TO220AB
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9520-55A,127 BUK9520-55A,127 NXP USA Inc. BUK9520-55A.pdf Description: MOSFET N-CH 55V 54A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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BUK9524-55A,127 BUK9524-55A,127 NXP USA Inc. BUK9524-55A.pdf Description: MOSFET N-CH 55V 46A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9528-55A,127 BUK9528-55A,127 NXP USA Inc. BUK9528_9628_55A-01.pdf Description: MOSFET N-CH 55V 40A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9609-55A,118 BUK9609-55A,118 NXP USA Inc. BUK95_9609_55A-01.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4633 pF @ 25 V
Qualification: AEC-Q101
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BUK96150-55A,118 BUK96150-55A,118 NXP USA Inc. BUK9%285%2C6%29150-55A.pdf Description: MOSFET N-CH 55V 13A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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BUK9623-75A,118 BUK9623-75A,118 NXP USA Inc. BUK9623-75A.pdf Description: MOSFET N-CH 75V 53A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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BUK98150-55,135 BUK98150-55,135 NXP USA Inc. BUK98150-55.pdf Description: MOSFET N-CH 55V 5.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
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BUK98150-55A,135 BUK98150-55A,135 NXP USA Inc. BUK98150-55A.pdf Description: MOSFET N-CH 55V 5.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Qualification: AEC-Q101
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BUK98180-100A,115 BUK98180-100A,115 NXP USA Inc. BUK98180-100A.pdf Description: MOSFET N-CH 100V 4.6A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Qualification: AEC-Q101
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BUK9875-100A,115 BUK9875-100A,115 NXP USA Inc. BUK9875-100A.pdf Description: MOSFET N-CH 100V 7A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Qualification: AEC-Q101
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BUK9907-55ATE,127 BUK9907-55ATE,127 NXP USA Inc. BUK9907-55ATE.pdf Description: MOSFET N-CH 55V 75A TO220-5
Input Capacitance (Ciss) (Max) @ Vds: 5836 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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BUK9E04-30B,127 BUK9E04-30B,127 NXP USA Inc. Description: MOSFET N-CH 30V 75A I2PAK
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BUK9E3R2-40B,127 BUK9E3R2-40B,127 NXP USA Inc. PHGLS29479-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A I2PAK
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BUK9E4R4-40B,127 BUK9E4R4-40B,127 NXP USA Inc. BUK9E4R4-40B.pdf Description: MOSFET N-CH 40V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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KMI15/1,115 KMI15/1,115 NXP USA Inc. KMI15_1.pdf Description: MAGNETIC SWITCH SPEC PURP 2SIP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-453A
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 12V
Technology: Magnetoresistive
Current - Output (Max): 14mA (Typ)
Supplier Device Package: 2-SIP
Part Status: Obsolete
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SAA7103E/V4,557 SAA7103E/V4,557 NXP USA Inc. SAA7102_SAA7103_4.pdf Description: IC DIGITAL VIDEO ENCODER 156LBGA
Part Status: Obsolete
Supplier Device Package: 156-LBGA (15x15)
Applications: Graphics, Laptops
Voltage - Supply, Digital: 3V ~ 3.6V
Voltage - Supply, Analog: 3.15V ~ 3.45V
Type: Video Encoder
Mounting Type: Surface Mount
Package / Case: 156-LBGA
Packaging: Tray
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SAA7105E/V1/S1,557 SAA7105E/V1/S1,557 NXP USA Inc. SAA7104E,05E.pdf Description: IC DIGITAL VIDEO ENCODER 156LBGA
Supplier Device Package: 156-LBGA (15x15)
Applications: TV
Voltage - Supply, Digital: 3.15V ~ 3.45V
Voltage - Supply, Analog: 3.15V ~ 3.45V
Type: Video Encoder
Mounting Type: Surface Mount
Package / Case: 156-LBGA
Packaging: Tray
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SAA7109AE/V1,557 SAA7109AE/V1,557 NXP USA Inc. SAA710(8,9)AE.pdf Description: IC VIDEO CODEC 156-LBGA
Part Status: Obsolete
Supplier Device Package: 156-LBGA (15x15)
Sigma Delta: No
Number of ADCs / DACs: 3 / 2
Resolution (Bits): 9, 10 b
Voltage - Supply, Digital: 3.15V ~ 3.45V
Voltage - Supply, Analog: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Data Interface: Serial
Type: Video, HD
Mounting Type: Surface Mount
Package / Case: 156-LBGA
Packaging: Tray
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TDA9830T/V1,112 TDA9830.pdf
TDA9830T/V1,112
Виробник: NXP USA Inc.
Description: IC VIDEO DEMODULATOR 16SO
Supplier Device Package: 16-SO
Applications: Consumer Video
Voltage - Supply: 4.5V ~ 8.8V, 10.8V ~ 13.2V
Function: Demodulator
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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TDA9852H/V2,557 TDA9852_2.pdf
TDA9852H/V2,557
Виробник: NXP USA Inc.
Description: IC AUDIO SIGNAL PROCESSOR 44PQFP
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TDA9855/V2,112 TDA9855_3.pdf
Виробник: NXP USA Inc.
Description: IC AUDIO SIGNAL PROCESSOR 52SDIP
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TDA9860/V2,112 TDA9860.pdf
Виробник: NXP USA Inc.
Description: IC AUDIO SIGNAL PROCESSOR 32SDIP
Number of Channels: 2
Supplier Device Package: 32-SDIP
Applications: Consumer Audio
Specifications: -63dB
Voltage - Supply: 7.2V ~ 8.8V
Operating Temperature: 0°C ~ 70°C (TA)
Interface: I2C
Function: Audio Signal Processor
Mounting Type: Through Hole
Package / Case: 32-SDIP (0.400", 10.16mm)
Packaging: Tube
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TDA9874AH/V2,557 TDA9874A.pdf
TDA9874AH/V2,557
Виробник: NXP USA Inc.
Description: IC DEMODULATOR 44QFP
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TEA1062A/C4/M1,112 TEA1062.pdf
TEA1062A/C4/M1,112
Виробник: NXP USA Inc.
Description: IC TELECOM INTERFACE 16DIP
Power (Watts): 666 mW
Number of Circuits: 1
Supplier Device Package: 16-DIP
Current - Supply: 900µA
Voltage - Supply: 3.4V
Operating Temperature: -25°C ~ 75°C
Function: Low Voltage Transmission
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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TEA1062AT/C4,112 TEA1062.pdf
TEA1062AT/C4,112
Виробник: NXP USA Inc.
Description: IC TELECOM INTERFACE 16SO
Power (Watts): 454 mW
Number of Circuits: 1
Supplier Device Package: 16-SO
Current - Supply: 900µA
Voltage - Supply: 3.4V
Operating Temperature: -25°C ~ 75°C
Function: Low Voltage Transmission
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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TEA6101T/N2,112 TEA6101_T_CNV_2.pdf
TEA6101T/N2,112
Виробник: NXP USA Inc.
Description: IC ANTENNA DIVERSITY 20-SOIC
Supplier Device Package: 20-SO
RF Type: Broadcast Radio
Function: Antenna Diversity
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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TEA6324T/V1,518 TEA6324T.pdf
TEA6324T/V1,518
Виробник: NXP USA Inc.
Description: IC VOLUME CONTROL 24SO
Number of Channels: 2
Supplier Device Package: 24-SO
Applications: Pre-Amplifier
Specifications: 110dB, 20dB
Voltage - Supply: 7.5V ~ 9.5V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Volume Control
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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TEA6360T/V2,512 TEA6360.pdf
TEA6360T/V2,512
Виробник: NXP USA Inc.
Description: IC AUDIO TONE PROCESSOR 32SO
Number of Channels: 2
Part Status: Obsolete
Supplier Device Package: 32-SO
Applications: Audio
Specifications: 5-Band
Voltage - Supply: 7V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Audio Tone Processor
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Grade: Automotive
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TEA6810V/C03,118 TEA6810V%2CTEA6811V.pdf
TEA6810V/C03,118
Виробник: NXP USA Inc.
Description: RF RECEIVER AM/FM 40VSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Modulation or Protocol: AM, FM
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Applications: AM/FM Car Radios
Current - Receiving: 35mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: 40-VSO
Part Status: Obsolete
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TEA6811V/C03,112 TEA6810V,TEA6811V.pdf
TEA6811V/C03,112
Виробник: NXP USA Inc.
Description: RF RECEIVER AM/FM 40VSOP
Applications: AM/FM Car Radios
Voltage - Supply: 4.75V ~ 5.25V, 8.1V ~ 8.9V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: AM, FM
Mounting Type: Surface Mount
Package / Case: 40-BSOP (0.295", 7.50mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 40-VSO
Antenna Connector: PCB, Surface Mount
Current - Receiving: 35mA
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TEA6825T/V1,118 TEA6823%2C6825T.pdf
TEA6825T/V1,118
Виробник: NXP USA Inc.
Description: RF RECEIVER AM/FM 56VSOP
Part Status: Obsolete
Supplier Device Package: 56-VSO
Antenna Connector: PCB, Surface Mount
Current - Receiving: 39mA
Applications: In Car Entertainment (ICE) Car Radio
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: AM, FM
Frequency: AM, FM, WB
Mounting Type: Surface Mount
Package / Case: 56-BSOP (0.435", 11.05mm Width)
Packaging: Tape & Reel (TR)
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TEA6880H/V2,518 TEA6880H.pdf
TEA6880H/V2,518
Виробник: NXP USA Inc.
Description: IC AUDIO TONE PROCESSOR 64QFP
Number of Channels: 6
Grade: Automotive
Supplier Device Package: 64-QFP (14x20)
Applications: Audio
Specifications: AM, FM
Voltage - Supply: 7.8V ~ 9.2V
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C
Function: Audio Tone Processor
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tape & Reel (TR)
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BGY883,112 BGY883.pdf
BGY883,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Current - Supply: 235 mA
Number of Circuits: 1
Part Status: Obsolete
Supplier Device Package: SOT115J
Applications: CATV
Mounting Type: Chassis Mount
Output Type: Push-Pull
Package / Case: SOT-115J
Packaging: Bulk
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BGY885A,112 BGY885A.pdf
BGY885A,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGY885B,112 BGY885B.pdf
BGY885B,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
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BGY887,112 BGY887.pdf
BGY887,112
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115J
Packaging: Bulk
Package / Case: SOT-115J
Output Type: Push-Pull
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115J
Number of Circuits: 1
Current - Supply: 220 mA
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CGD923,112 CGD923.pdf
Виробник: NXP USA Inc.
Description: IC AMP CATV SOT115AE
Packaging: Bulk
Package / Case: SOT-115AE
Mounting Type: Chassis Mount
Applications: CATV
Supplier Device Package: SOT115AE
Part Status: Obsolete
Number of Circuits: 1
Current - Supply: 475 mA
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BUK218-50DC,118 BUK218-50DC.pdf
BUK218-50DC,118
Виробник: NXP USA Inc.
Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Supplier Device Package: D2PAK-7
Voltage - Supply: 5.5V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 8A, 8A
Logic Voltage - VIL, VIH: 1.2V, 3V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
DigiKey Programmable: Not Verified
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BUK218-50DY,118 BUK218-50DY_1.pdf
BUK218-50DY,118
Виробник: NXP USA Inc.
Description: IC GATE DRVR HIGH-SIDE D2PAK-7
Logic Voltage - VIL, VIH: 1.2V, 3V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
Supplier Device Package: D2PAK-7
Voltage - Supply: 5.5V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 8A, 8A
DigiKey Programmable: Not Verified
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BUK7506-55B,127 BUK7506-55B.pdf
BUK7506-55B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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BUK7506-75B,127 BUK7506-75B.pdf
BUK7506-75B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7446 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
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BUK75150-55A,127 BUK75%2C76150-55A.pdf
BUK75150-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK7523-75A,127 BUK7523-75A.pdf
BUK7523-75A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 53A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK7524-55A,127 BUK7524%2C7624_55A.pdf
BUK7524-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 47A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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BUK752R7-30B,127 BUK752R7-30B.pdf
BUK752R7-30B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6212 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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BUK753R1-40B,127
BUK753R1-40B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
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BUK754R3-40B,127 BUK754R3-40B.pdf
BUK754R3-40B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK76150-55A,118 BUK75,76150-55A.pdf
BUK76150-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 11A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 322 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
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BUK7624-55A,118 BUK7524%2C7624_55A.pdf
BUK7624-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 47A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
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BUK7628-55A,118 BUK7528-55A.pdf
BUK7628-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 42A D2PAK
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BUK764R3-40B,118 BUK764R3-40B.pdf
BUK764R3-40B,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4824 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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BUK794R1-40BT,127
BUK794R1-40BT,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6808 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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BUK7L06-34ARC,127 BUK7L06-34ARC_4.pdf
BUK7L06-34ARC,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 34V 75A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 25 V
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BUK7L11-34ARC,127 BUK7L11-34ARC_4.pdf
BUK7L11-34ARC,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 34V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2506 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9506-55B,127 BUK9506-55B.pdf
BUK9506-55B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9509-55A,127 BUK95_9609_55A-01.pdf
BUK9509-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9509-75A,127 BUK9609-75A.pdf
BUK9509-75A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9516-55A,127 BUK9516-55A.pdf
BUK9516-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 66A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3085 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9516-75B,127 BUK9516-75B.pdf
BUK9516-75B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 67A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK95180-100A,127 BUK95180-100A.pdf
BUK95180-100A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 11A TO220AB
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9520-55A,127 BUK9520-55A.pdf
BUK9520-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 54A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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BUK9524-55A,127 BUK9524-55A.pdf
BUK9524-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 46A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 21.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9528-55A,127 BUK9528_9628_55A-01.pdf
BUK9528-55A,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 40A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK9609-55A,118 BUK95_9609_55A-01.pdf
BUK9609-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4633 pF @ 25 V
Qualification: AEC-Q101
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BUK96150-55A,118 BUK9%285%2C6%29150-55A.pdf
BUK96150-55A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 13A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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BUK9623-75A,118 BUK9623-75A.pdf
BUK9623-75A,118
Виробник: NXP USA Inc.
Description: MOSFET N-CH 75V 53A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 138W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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BUK98150-55,135 BUK98150-55.pdf
BUK98150-55,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
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BUK98150-55A,135 BUK98150-55A.pdf
BUK98150-55A,135
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Qualification: AEC-Q101
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BUK98180-100A,115 BUK98180-100A.pdf
BUK98180-100A,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 4.6A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Qualification: AEC-Q101
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BUK9875-100A,115 BUK9875-100A.pdf
BUK9875-100A,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 7A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Qualification: AEC-Q101
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BUK9907-55ATE,127 BUK9907-55ATE.pdf
BUK9907-55ATE,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220-5
Input Capacitance (Ciss) (Max) @ Vds: 5836 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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BUK9E04-30B,127
BUK9E04-30B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A I2PAK
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BUK9E3R2-40B,127 PHGLS29479-1.pdf?t.download=true&u=5oefqw
BUK9E3R2-40B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 100A I2PAK
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BUK9E4R4-40B,127 BUK9E4R4-40B.pdf
BUK9E4R4-40B,127
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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KMI15/1,115 KMI15_1.pdf
KMI15/1,115
Виробник: NXP USA Inc.
Description: MAGNETIC SWITCH SPEC PURP 2SIP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-453A
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 12V
Technology: Magnetoresistive
Current - Output (Max): 14mA (Typ)
Supplier Device Package: 2-SIP
Part Status: Obsolete
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SAA7103E/V4,557 SAA7102_SAA7103_4.pdf
SAA7103E/V4,557
Виробник: NXP USA Inc.
Description: IC DIGITAL VIDEO ENCODER 156LBGA
Part Status: Obsolete
Supplier Device Package: 156-LBGA (15x15)
Applications: Graphics, Laptops
Voltage - Supply, Digital: 3V ~ 3.6V
Voltage - Supply, Analog: 3.15V ~ 3.45V
Type: Video Encoder
Mounting Type: Surface Mount
Package / Case: 156-LBGA
Packaging: Tray
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SAA7105E/V1/S1,557 SAA7104E,05E.pdf
SAA7105E/V1/S1,557
Виробник: NXP USA Inc.
Description: IC DIGITAL VIDEO ENCODER 156LBGA
Supplier Device Package: 156-LBGA (15x15)
Applications: TV
Voltage - Supply, Digital: 3.15V ~ 3.45V
Voltage - Supply, Analog: 3.15V ~ 3.45V
Type: Video Encoder
Mounting Type: Surface Mount
Package / Case: 156-LBGA
Packaging: Tray
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SAA7109AE/V1,557 SAA710(8,9)AE.pdf
SAA7109AE/V1,557
Виробник: NXP USA Inc.
Description: IC VIDEO CODEC 156-LBGA
Part Status: Obsolete
Supplier Device Package: 156-LBGA (15x15)
Sigma Delta: No
Number of ADCs / DACs: 3 / 2
Resolution (Bits): 9, 10 b
Voltage - Supply, Digital: 3.15V ~ 3.45V
Voltage - Supply, Analog: 3.15V ~ 3.45V
Operating Temperature: 0°C ~ 70°C
Data Interface: Serial
Type: Video, HD
Mounting Type: Surface Mount
Package / Case: 156-LBGA
Packaging: Tray
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