| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NZT6717 | onsemi |
Description: TRANS NPN 80V 1.2A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NZT6717 | onsemi |
Description: TRANS NPN 80V 1.2A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDS6681Z-G | onsemi |
Description: MOSFET P-CH 30V 20A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
NC7SZ38P5X-L22057 | onsemi |
Description: IC GATE NAND 1CH 2-INP SC88AFeatures: Open Drain Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: -, 32mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDS8978-F40 | onsemi |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
LB1848M-TRM-H | onsemi |
Description: BIDIRECTIONAL MOTOR DRIVERPackaging: Bulk |
на замовлення 1370 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
LB1845-E | onsemi |
Description: IC MOTOR DRIVER BIPOLAR 28HDIP Packaging: Box Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Bipolar Voltage - Load: 10V ~ 44.5V Supplier Device Package: 28-HDIP Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4 |
на замовлення 46496 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LB1845L-E | onsemi |
Description: IC MOTOR DRIVER 28DIP Packaging: Tube Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad Mounting Type: Through Hole Supplier Device Package: 28-DIP |
на замовлення 11517 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCP1215DR2 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 8-SOIC Voltage - Start Up: 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NCP1215DR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 8-SOIC Voltage - Start Up: 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NCP1215ASNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 6-TSOP Voltage - Start Up: 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
AR0130CSSM00SPCA0-DPBR | onsemi |
Description: CMOS IMAGE SENSOR 1.2 MP 1/3"Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-PLCC (11.43x11.43) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AR0130CSSC00SPCA0-DPBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 45.0 |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| LC824204-13YB-VH | onsemi |
Description: IC MICRO-USB SWITCH DETECT 25WLP Features: OVP Packaging: Bulk Package / Case: 25-WFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 5Ohm Supplier Device Package: 25-WLCSP (2.07x2.07) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 4:1 Number of Channels: 2 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| LC824206XA-VH | onsemi |
Description: IC MICRO-USB SWITCH DETECT 25WLP Features: OVP Packaging: Bulk Package / Case: 25-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 4.7Ohm Supplier Device Package: 25-WLCSP (2.17x2.17) Voltage - Supply, Single (V+): 3.1V ~ 4.6V Multiplexer/Demultiplexer Circuit: 5:1 Number of Channels: 2 |
на замовлення 423630 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
NOIP1FN1300A-QTI | onsemi |
Description: IC IMAGE SENSOR 1.3MP 48LCCPackaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -40°C ~ 85°C Pixel Size: 4.8µm x 4.8µm Supplier Device Package: 48-LCC (14.22x14.22) |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NOIP1SE5000A-QTI | onsemi |
Description: IC IMAGE SENSOR 5MP LVDS 84LCCPackaging: Tray Type: CMOS with Processor Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 2592H x 2048V Frames per Second: 100.0 |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0144CSSM20SUKA0-CPBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Tray Package / Case: 69-WFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 69-ODCSP (5.55x5.57) Frames per Second: 60.0 |
на замовлення 1463 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0147ATSC00XUEG5-DRBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Tray Package / Case: 89-LFBGA Type: CMOS Operating Temperature: -40°C ~ 110°C Voltage - Supply: 1.14V ~ 1.26V Pixel Size: 3µm x 3µm Active Pixel Array: 1344H x 968V Supplier Device Package: 89-IBGA (8x7) Frames per Second: 60.0 |
на замовлення 2625 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0330CM1C12SHKA0-CP | onsemi |
Description: IMAGE SENSORPackaging: Tray Package / Case: 64-VFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Supplier Device Package: 64-CSP (6.28x6.65) Frames per Second: 60.0 |
на замовлення 8070 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0134CSSM00SPCA0-DPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 54.0 |
на замовлення 1458 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AR0135CS2M25SUEA0-DPBR | onsemi |
Description: IMAGE SENSOR 1MP 1/3 CIS SOPackaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) |
на замовлення 1030 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AR0522SRSC09SURA0-DP | onsemi |
Description: IMAGE SENSOR CMOS 5MP 52PLCCPackaging: Tray Package / Case: 52-LCC Type: CMOS Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 52-PLCC (12x12) Frames per Second: 60.0 |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0234CSSM00SUKA0-CP | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 2071 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0234CSSM28SUKA0-CP | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 1806 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0234CSSC28SUKA0-CR | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 1961 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NOIP2SN1300A-QTI | onsemi |
Description: IC IMAGE SENSOR 1.3MP 48LCCPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 1280H x 1024V Supplier Device Package: 48-LCC (14.22x14.22) Frames per Second: 43.0 |
на замовлення 413 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NFVA35065L42 | onsemi |
Description: ASPM27 V3 650V/50A (FOR TICO)Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Current: 50 A Voltage: 650 V |
на замовлення 431 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSV60101DMTWTBG | onsemi |
Description: TRANS NPN DUAL 60V 1A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSV60101DMTWTBG | onsemi |
Description: TRANS NPN DUAL 60V 1A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NB3V60113G00MTR2G | onsemi |
Description: IC CLOCK GEN PLL 200MHZ 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Mounting Type: Surface Mount Output: LVCMOS, LVDS, HCSL Frequency - Max: 200MHz Input: LVCMOS, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.7V ~ 1.9V Ratio - Input:Output: 1:3 Differential - Input:Output: No/Yes Supplier Device Package: 8-WDFN (2x2) PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 2509 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
EFC6601R-TR | onsemi |
Description: MOSFET 2N-CH EFCP2718Packaging: Bulk Package / Case: 6-XFBGA, FCBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Supplier Device Package: EFCP2718-6CE-020 |
на замовлення 692464 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NGTB75N60SWG | onsemi |
Description: IGBT 600V 100A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
на замовлення 894 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDMF5085 | onsemi |
Description: MOSFET IPM 25V 108A 39-PWRVFQFNPackaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Current: 108 A Voltage: 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDMF5085 | onsemi |
Description: MOSFET IPM 25V 108A 39-PWRVFQFNPackaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Current: 108 A Voltage: 25 V |
на замовлення 8369 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC74AC138DT | onsemi |
Description: IC DECODER/DEMUX 1X3:8 16-TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
на замовлення 12960 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FAN4800CMY | onsemi |
Description: IC PFC CTRLR CCM/DCM 84KHZ 16SOPPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11V ~ 16.5V Frequency - Switching: 66kHz ~ 84kHz Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM) Supplier Device Package: 16-SOIC Current - Startup: 100 µA |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC74ACT08DTR2 | onsemi |
Description: IC GATE AND 4CH 2-INP 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC74ACT08DR2GH | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 4681 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MBR3045WT | onsemi |
Description: DIODE ARR SCHOTT 45V 15A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 4431 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2003M-TL-W | onsemi |
Description: DIODE SCHOTTKY 30V 2A 6MCPHPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 6-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SB2003M-TL-W | onsemi |
Description: DIODE SCHOTTKY 30V 2A 6MCPHPackaging: Bulk Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 6-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 30 µA @ 15 V |
на замовлення 213000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2003M-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 2A 6MCPHPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 6-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
74LVC541ADTR2G | onsemi |
Description: IC BUF NON-INVERT 3.6V 20TSSOP Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 11654 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVMFS5C423NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVMFS5C423NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 10300 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVMFS5C423NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVMFS5C423NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 2885 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTMFS5C423NLT3G | onsemi |
Description: MOSFET N-CH 40V 150A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTMFS5C423NLT3G | onsemi |
Description: MOSFET N-CH 40V 150A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V |
на замовлення 84988 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LB1638MC-AH | onsemi |
Description: IC MOTOR DRIVER 2.5V-9V 10SOIC Packaging: Bulk Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: Parallel Operating Temperature: -20°C ~ 75°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 2.5V ~ 9V Applications: Battery Powered Technology: Bipolar Voltage - Load: 2.2V ~ 9V Supplier Device Package: 10-SOIC Motor Type - AC, DC: Brushed DC |
на замовлення 33414 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FFSH5065A | onsemi |
Description: DIODE SIL CARB 650V 60A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2530pF @ 1V, 100kHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 3332 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FFSH3065A | onsemi |
Description: DIODE SIL CARB 650V 26A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1705pF @ 1V, 100kHz Current - Average Rectified (Io): 26A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 22378 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SBE807-TL-E | onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPHPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: 5-CPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SBE807-TL-E | onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPHPackaging: Bulk Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: 5-CPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 16 V |
на замовлення 121913 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FFSP3065B | onsemi |
Description: DIODE SIL CARB 650V 30A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1280pF @ 1V, 100kHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 722 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FFSP3065B-F085 | onsemi |
Description: DIODE SIL CARB 650V 30A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1280pF @ 1V, 100kHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 83988 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FFSP3065A | onsemi |
Description: DIODE SIL CARB 650V 30A TO220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1705pF @ 1V, 100kHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 351 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTB6411ANG | onsemi |
Description: MOSFET N-CH 100V 77A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NTB6411ANT4G | onsemi |
Description: MOSFET N-CH 100V 77A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NZT6717 |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| NZT6717 |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| FDS6681Z-G |
Виробник: onsemi
Description: MOSFET P-CH 30V 20A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Description: MOSFET P-CH 30V 20A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| NC7SZ38P5X-L22057 |
![]() |
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
| FDS8978-F40 |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| LB1848M-TRM-H |
![]() |
на замовлення 1370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 202+ | 108.78 грн |
| LB1845-E |
Виробник: onsemi
Description: IC MOTOR DRIVER BIPOLAR 28HDIP
Packaging: Box
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 44.5V
Supplier Device Package: 28-HDIP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HDIP
Packaging: Box
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 44.5V
Supplier Device Package: 28-HDIP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4
на замовлення 46496 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 73+ | 302.25 грн |
| LB1845L-E |
Виробник: onsemi
Description: IC MOTOR DRIVER 28DIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Supplier Device Package: 28-DIP
Description: IC MOTOR DRIVER 28DIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Supplier Device Package: 28-DIP
на замовлення 11517 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 195+ | 112.43 грн |
| NCP1215DR2 |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
товару немає в наявності
В кошику
од. на суму грн.
| NCP1215DR2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
товару немає в наявності
В кошику
од. на суму грн.
| NCP1215ASNT1G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
товару немає в наявності
В кошику
од. на суму грн.
| AR0130CSSM00SPCA0-DPBR |
![]() |
Виробник: onsemi
Description: CMOS IMAGE SENSOR 1.2 MP 1/3"
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: CMOS IMAGE SENSOR 1.2 MP 1/3"
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1724.49 грн |
| 10+ | 1314.55 грн |
| 25+ | 1245.34 грн |
| 80+ | 1006.40 грн |
| 440+ | 941.47 грн |
| AR0130CSSC00SPCA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1263.77 грн |
| 5+ | 1108.23 грн |
| 10+ | 1067.80 грн |
| 25+ | 956.82 грн |
| 50+ | 925.87 грн |
| 100+ | 897.47 грн |
| 500+ | 826.48 грн |
| LC824204-13YB-VH |
Виробник: onsemi
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-WFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
Supplier Device Package: 25-WLCSP (2.07x2.07)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 4:1
Number of Channels: 2
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-WFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
Supplier Device Package: 25-WLCSP (2.07x2.07)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 4:1
Number of Channels: 2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 151+ | 146.37 грн |
| LC824206XA-VH |
Виробник: onsemi
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 4.7Ohm
Supplier Device Package: 25-WLCSP (2.17x2.17)
Voltage - Supply, Single (V+): 3.1V ~ 4.6V
Multiplexer/Demultiplexer Circuit: 5:1
Number of Channels: 2
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 4.7Ohm
Supplier Device Package: 25-WLCSP (2.17x2.17)
Voltage - Supply, Single (V+): 3.1V ~ 4.6V
Multiplexer/Demultiplexer Circuit: 5:1
Number of Channels: 2
на замовлення 423630 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 166+ | 133.13 грн |
| NOIP1FN1300A-QTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Pixel Size: 4.8µm x 4.8µm
Supplier Device Package: 48-LCC (14.22x14.22)
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Pixel Size: 4.8µm x 4.8µm
Supplier Device Package: 48-LCC (14.22x14.22)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9225.37 грн |
| 5+ | 8271.27 грн |
| 10+ | 8043.21 грн |
| 25+ | 7291.89 грн |
| NOIP1SE5000A-QTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENSOR 5MP LVDS 84LCC
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Frames per Second: 100.0
Description: IC IMAGE SENSOR 5MP LVDS 84LCC
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Frames per Second: 100.0
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18939.56 грн |
| 5+ | 17099.85 грн |
| 10+ | 16675.14 грн |
| 42+ | 14924.68 грн |
| AR0144CSSM20SUKA0-CPBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
на замовлення 1463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 841.38 грн |
| AR0147ATSC00XUEG5-DRBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 1.14V ~ 1.26V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1344H x 968V
Supplier Device Package: 89-IBGA (8x7)
Frames per Second: 60.0
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 1.14V ~ 1.26V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1344H x 968V
Supplier Device Package: 89-IBGA (8x7)
Frames per Second: 60.0
на замовлення 2625 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1288.47 грн |
| 5+ | 1132.01 грн |
| 10+ | 1091.58 грн |
| 25+ | 985.97 грн |
| AR0330CM1C12SHKA0-CP |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 60.0
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 60.0
на замовлення 8070 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1334.46 грн |
| 5+ | 1171.04 грн |
| 10+ | 1128.65 грн |
| 25+ | 1011.68 грн |
| 40+ | 989.35 грн |
| 80+ | 958.68 грн |
| 440+ | 878.99 грн |
| AR0134CSSM00SPCA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
на замовлення 1458 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1905.03 грн |
| 5+ | 1679.48 грн |
| 10+ | 1621.66 грн |
| 25+ | 1457.06 грн |
| 50+ | 1412.71 грн |
| 100+ | 1372.05 грн |
| 500+ | 1268.91 грн |
| AR0135CS2M25SUEA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2031.06 грн |
| 5+ | 1791.01 грн |
| 10+ | 1729.83 грн |
| 25+ | 1554.73 грн |
| 50+ | 1507.77 грн |
| 100+ | 1464.68 грн |
| AR0522SRSC09SURA0-DP |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2042.99 грн |
| 5+ | 1802.16 грн |
| 10+ | 1740.57 грн |
| 25+ | 1564.46 грн |
| 50+ | 1517.24 грн |
| 100+ | 1473.92 грн |
| AR0234CSSM00SUKA0-CP |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 2071 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2318.05 грн |
| 5+ | 2047.85 грн |
| 10+ | 1979.13 грн |
| 25+ | 1780.19 грн |
| 50+ | 1727.41 грн |
| 100+ | 1679.01 грн |
| AR0234CSSM28SUKA0-CP |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 1806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2363.19 грн |
| 5+ | 2088.03 грн |
| 10+ | 2018.33 грн |
| 25+ | 1815.81 грн |
| 50+ | 1762.24 грн |
| 100+ | 1713.08 грн |
| AR0234CSSC28SUKA0-CR |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2150.29 грн |
| 5+ | 1903.19 грн |
| 10+ | 1872.27 грн |
| NOIP2SN1300A-QTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 43.0
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 43.0
на замовлення 413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7263.29 грн |
| 5+ | 6496.66 грн |
| 10+ | 6311.00 грн |
| 25+ | 5714.29 грн |
| 64+ | 5523.68 грн |
| NFVA35065L42 |
![]() |
Виробник: onsemi
Description: ASPM27 V3 650V/50A (FOR TICO)
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 650 V
Description: ASPM27 V3 650V/50A (FOR TICO)
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 650 V
на замовлення 431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2912.47 грн |
| 10+ | 2586.05 грн |
| 60+ | 2469.81 грн |
| 120+ | 1976.97 грн |
| 300+ | 1881.53 грн |
| NSV60101DMTWTBG |
![]() |
Виробник: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.11 грн |
| NSV60101DMTWTBG |
![]() |
Виробник: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.69 грн |
| 10+ | 39.77 грн |
| 100+ | 27.53 грн |
| 500+ | 21.59 грн |
| 1000+ | 18.37 грн |
| NB3V60113G00MTR2G |
Виробник: onsemi
Description: IC CLOCK GEN PLL 200MHZ 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: LVCMOS, LVDS, HCSL
Frequency - Max: 200MHz
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/Yes
Supplier Device Package: 8-WDFN (2x2)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN PLL 200MHZ 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: LVCMOS, LVDS, HCSL
Frequency - Max: 200MHz
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/Yes
Supplier Device Package: 8-WDFN (2x2)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2509 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 585.05 грн |
| 10+ | 509.26 грн |
| 25+ | 485.51 грн |
| 100+ | 395.62 грн |
| 250+ | 377.85 грн |
| 500+ | 344.50 грн |
| 1000+ | 295.13 грн |
| EFC6601R-TR |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
на замовлення 692464 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 876+ | 26.74 грн |
| NGTB75N60SWG |
![]() |
Виробник: onsemi
Description: IGBT 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
на замовлення 894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 313.34 грн |
| FDMF5085 |
![]() |
Виробник: onsemi
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 142.51 грн |
| FDMF5085 |
![]() |
Виробник: onsemi
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
на замовлення 8369 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 384.07 грн |
| 10+ | 245.69 грн |
| 100+ | 175.53 грн |
| 500+ | 157.63 грн |
| MC74AC138DT |
![]() |
Виробник: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 12960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1137+ | 19.12 грн |
| FAN4800CMY |
![]() |
Виробник: onsemi
Description: IC PFC CTRLR CCM/DCM 84KHZ 16SOP
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Current - Startup: 100 µA
Description: IC PFC CTRLR CCM/DCM 84KHZ 16SOP
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Current - Startup: 100 µA
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 319+ | 69.14 грн |
| MC74ACT08DTR2 |
![]() |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2019+ | 11.03 грн |
| MC74ACT08DR2GH |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 4681 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 826+ | 26.48 грн |
| MBR3045WT | ![]() |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 4431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 224+ | 98.56 грн |
| SS2003M-TL-W |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SB2003M-TL-W |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
на замовлення 213000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1298+ | 16.69 грн |
| SS2003M-TL-E |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC541ADTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 11654 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2184+ | 10.48 грн |
| NVMFS5C423NLAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 74.47 грн |
| 3000+ | 70.08 грн |
| NVMFS5C423NLAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
на замовлення 10300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 233.34 грн |
| 10+ | 145.23 грн |
| 100+ | 100.28 грн |
| 500+ | 76.05 грн |
| NVMFS5C423NLWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 68.89 грн |
| NVMFS5C423NLWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.01 грн |
| 10+ | 135.56 грн |
| 100+ | 93.24 грн |
| 500+ | 70.50 грн |
| NTMFS5C423NLT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Description: MOSFET N-CH 40V 150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 38.95 грн |
| NTMFS5C423NLT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Description: MOSFET N-CH 40V 150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
на замовлення 84988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.29 грн |
| 10+ | 84.14 грн |
| 100+ | 58.44 грн |
| 500+ | 43.41 грн |
| 1000+ | 38.71 грн |
| 2000+ | 36.64 грн |
| LB1638MC-AH |
Виробник: onsemi
Description: IC MOTOR DRIVER 2.5V-9V 10SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 9V
Applications: Battery Powered
Technology: Bipolar
Voltage - Load: 2.2V ~ 9V
Supplier Device Package: 10-SOIC
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 2.5V-9V 10SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 9V
Applications: Battery Powered
Technology: Bipolar
Voltage - Load: 2.2V ~ 9V
Supplier Device Package: 10-SOIC
Motor Type - AC, DC: Brushed DC
на замовлення 33414 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 224+ | 96.78 грн |
| FFSH5065A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 3332 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 895.88 грн |
| 30+ | 574.56 грн |
| 120+ | 498.83 грн |
| 510+ | 448.28 грн |
| FFSH3065A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 26A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1705pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 26A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1705pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 22378 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 698.31 грн |
| 30+ | 536.92 грн |
| 120+ | 480.40 грн |
| 510+ | 397.80 грн |
| 1020+ | 358.02 грн |
| 2010+ | 335.48 грн |
| SBE807-TL-E |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
товару немає в наявності
В кошику
од. на суму грн.
| SBE807-TL-E |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
на замовлення 121913 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 20.59 грн |
| FFSP3065B |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 546.73 грн |
| 50+ | 283.74 грн |
| 100+ | 260.34 грн |
| 500+ | 206.66 грн |
| FFSP3065B-F085 |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 83988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 607.19 грн |
| 10+ | 398.38 грн |
| 100+ | 292.87 грн |
| 800+ | 237.66 грн |
| FFSP3065A |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 650V 30A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1705pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1705pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 351 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 671.91 грн |
| 10+ | 442.91 грн |
| 100+ | 327.64 грн |
| NTB6411ANG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 100V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NTB6411ANT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 100V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.





































