| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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KSB772YSTU | onsemi |
Description: TRANS PNP 30V 3A TO-126-3Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
на замовлення 13023 шт: термін постачання 21-31 дні (днів) |
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LM339DR2 | onsemi |
Description: IC COMPARATOR QUAD SGL 14-SOICPackaging: Bulk |
на замовлення 9362 шт: термін постачання 21-31 дні (днів) |
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SMMSZ5254BT1G | onsemi |
Description: DIODE ZENER 27V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMSZ5254BT1G | onsemi |
Description: DIODE ZENER 27V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCPF1300N80ZYD | onsemi |
Description: POWER FIELD-EFFECT TRANSISTOR, NPackaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
на замовлення 497 шт: термін постачання 21-31 дні (днів) |
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FCPF2250N80Z | onsemi |
Description: MOSFET N-CH 800V 2.6A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Power Dissipation (Max): 21.9W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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2SC3332S-AA | onsemi |
Description: TRANS NPN 160V 0.7A 3-NPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
на замовлення 145414 шт: термін постачання 21-31 дні (днів) |
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2SC3332S | onsemi |
Description: TRANS NPN 160V 0.7A 3-NPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
на замовлення 24642 шт: термін постачання 21-31 дні (днів) |
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2SC3332T | onsemi |
Description: TRANS NPN 160V 0.7A 3-NPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
на замовлення 3180 шт: термін постачання 21-31 дні (днів) |
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| MJEC15030WP | onsemi |
Description: TRANS NPN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FOD410TV | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIPPackaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL, VDE Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 2mA Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FOD4116TV | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIPPackaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL, VDE Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 1.3mA Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MT9F002I12STCV-DP | onsemi |
Description: SENSOR IMAGE Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 4384H x 3288V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 13.7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DM74ALS648NT | onsemi |
Description: IC TXRX NON-INVERT 24DIP Packaging: Bag Package / Case: 24-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Number of Bits per Element: 8 Supplier Device Package: 24-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFWS020N06CT1G | onsemi |
Description: MOSFET N-CH 60V 9A/28A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS020N06CT1G | onsemi |
Description: MOSFET N-CH 60V 9A/28A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS003P03P8ZT1G | onsemi |
Description: PFET SO8FL -30V 3MOPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFWS1D5N08XT1G | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFWS1D5N08XT1G | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
на замовлення 1221 шт: термін постачання 21-31 дні (днів) |
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NVMFWS003N10MCT1G | onsemi |
Description: PTNG 100V STD SO8FL HEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 4V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFWS003N10MCT1G | onsemi |
Description: PTNG 100V STD SO8FL HEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 4V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
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NVMFWS002N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FL HEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFWS002N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FL HEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZL6V8AXV3T3G | onsemi |
Description: TVS DIODE 4.5VWM 7.9VC SC89-3Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.9A (8/20µs) Voltage - Reverse Standoff (Typ): 4.5V Supplier Device Package: SC-89-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 7.9V Power - Peak Pulse: 73W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZL5V6ATT1G | onsemi |
Description: TVS DIODE 3VWM 9.97V SC75 SOT416 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.11A (8/20µs) Voltage - Reverse Standoff (Typ): 3V (Max) Supplier Device Package: SC-75, SOT-416 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9.97V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZL5V6ATT1G | onsemi |
Description: TVS DIODE 3VWM 9.97V SC75 SOT416 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.11A (8/20µs) Voltage - Reverse Standoff (Typ): 3V (Max) Supplier Device Package: SC-75, SOT-416 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9.97V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZ23C5V6ALT1G | onsemi |
Description: TVS DIODE 1VWM 8VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 1V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 24W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZ23C5V6ALT1G | onsemi |
Description: TVS DIODE 1VWM 8VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 1V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 24W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZ23C5V6ALT1G | onsemi |
Description: TVS DIODE 1VWM 8VC SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 1V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 24W Power Line Protection: No |
на замовлення 2528500 шт: термін постачання 21-31 дні (днів) |
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74LVTH16245MTD | onsemi |
Description: IC BUF NON-INVERT 3.6V 48TSSOPPackaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 48-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVTH16245MTDX | onsemi |
Description: IC BUF NON-INVERT 3.6V 48TSSOPPackaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 48-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR3045PTG | onsemi |
Description: DIODE ARRAY SCHOT 45V 15A SOT-93Packaging: Tube Package / Case: TO-218-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SOT-93 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 1826 шт: термін постачання 21-31 дні (днів) |
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| SMMBZ33VALT1G | onsemi |
Description: TVS DIODES 26VWM 46VC SOT23 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| SMMBZ33VALT1G | onsemi |
Description: TVS DIODES 26VWM 46VC SOT23 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BZX79C15 | onsemi |
Description: DIODE ZENER 15V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V |
на замовлення 11983 шт: термін постачання 21-31 дні (днів) |
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NLV74HC138ADTR2G | onsemi |
Description: IC DECODER/DEMUX 1X3:8 16-TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
на замовлення 28813 шт: термін постачання 21-31 дні (днів) |
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BC817-40LT1 | onsemi |
Description: TRANS NPN 45V 0.5A SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
на замовлення 465848 шт: термін постачання 21-31 дні (днів) |
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BC817-40LT3 | onsemi |
Description: TRANS NPN 45V 0.5A SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 930000 шт: термін постачання 21-31 дні (днів) |
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MMBD6050LT1 | onsemi |
Description: DIODE STANDARD 70V 200MA SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MMBD6050LT3 | onsemi |
Description: DIODE SWITCHING 70V SOT-23Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBD6050 | onsemi |
Description: DIODE GEN PURP 70V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD6050 | onsemi |
Description: DIODE GEN PURP 70V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD6050 | onsemi |
Description: DIODE GEN PURP 70V 200MA SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 19302 шт: термін постачання 21-31 дні (днів) |
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MC74AC4040D | onsemi |
Description: IC BINARY COUNTER 12-BIT 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-SOIC Voltage - Supply: 2 V ~ 6 V Count Rate: 140 MHz Number of Bits per Element: 12 |
на замовлення 1225 шт: термін постачання 21-31 дні (днів) |
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MC74AC4040N | onsemi |
Description: IC BINARY COUNTER 12-BIT 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-PDIP Voltage - Supply: 2 V ~ 6 V Count Rate: 140 MHz Number of Bits per Element: 12 |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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MC74AC4040NG | onsemi |
Description: IC BINARY COUNTER 12-BIT 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-PDIP Voltage - Supply: 2 V ~ 6 V Count Rate: 140 MHz Number of Bits per Element: 12 |
на замовлення 872 шт: термін постачання 21-31 дні (днів) |
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MC74AC4040MELG | onsemi |
Description: IC BINARY COUNTR 12BIT 16SOEIAJ Packaging: Bulk Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-SOEIAJ Voltage - Supply: 2 V ~ 6 V Count Rate: 140 MHz Number of Bits per Element: 12 |
на замовлення 14974 шт: термін постачання 21-31 дні (днів) |
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| SC79L05ABDR2G | onsemi |
Description: IC REG LINEAR NEG 5V 100MA 5VPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SC79L05ABDR2G | onsemi |
Description: IC REG LINEAR NEG 5V 100MA 5VPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMF11AT1 | onsemi |
Description: TVS DIODE 11VWM 18.2VC SOD123FLPackaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
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SMF11AT1G | onsemi |
Description: 200W TRANSIENT VOLTAGE SUPPRESSOPackaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: SOD-123FL Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 65251 шт: термін постачання 21-31 дні (днів) |
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3N256 | onsemi |
Description: BRIDGE RECT 1PHASE 400V 2A KBPMPackaging: Tube Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FGHL40T65LQDT | onsemi |
Description: IGBT TRENCH FS 650V 60A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 84 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/364ns Switching Energy: 620µJ (on), 1.03mJ (off) Test Condition: 400V, 20A, 4.7Ohm, 15V Gate Charge: 414 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 273 W |
на замовлення 1793 шт: термін постачання 21-31 дні (днів) |
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MPSW01 | onsemi |
Description: TRANS NPN 30V 1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
на замовлення 15439 шт: термін постачання 21-31 дні (днів) |
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MPSW01G | onsemi |
Description: TRANS NPN 30V 1A TO92Packaging: Box Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
на замовлення 59557 шт: термін постачання 21-31 дні (днів) |
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MPSW05G | onsemi |
Description: TRANS NPN 60V 0.5A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MPSW06G | onsemi |
Description: TRANS NPN 80V 0.5A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 54576 шт: термін постачання 21-31 дні (днів) |
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MPSW51ARLRAG | onsemi |
Description: TRANS PNP 40V 1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
на замовлення 135912 шт: термін постачання 21-31 дні (днів) |
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MPSW51G | onsemi |
Description: TRANS PNP 30V 1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
на замовлення 13381 шт: термін постачання 21-31 дні (днів) |
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MPSW55G | onsemi |
Description: TRANS PNP 60V 0.5A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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| KSB772YSTU |
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Виробник: onsemi
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 13023 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 993+ | 21.00 грн |
| LM339DR2 |
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на замовлення 9362 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3122+ | 7.00 грн |
| SMMSZ5254BT1G |
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Виробник: onsemi
Description: DIODE ZENER 27V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMMSZ5254BT1G |
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Виробник: onsemi
Description: DIODE ZENER 27V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FCPF1300N80ZYD |
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Виробник: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
на замовлення 497 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 281+ | 80.67 грн |
| FCPF2250N80Z |
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Виробник: onsemi
Description: MOSFET N-CH 800V 2.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Description: MOSFET N-CH 800V 2.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.05 грн |
| 10+ | 168.67 грн |
| 100+ | 136.46 грн |
| 500+ | 113.84 грн |
| 1000+ | 97.47 грн |
| 2000+ | 91.78 грн |
| 2SC3332S-AA |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
на замовлення 145414 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1137+ | 18.21 грн |
| 2SC3332S |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
на замовлення 24642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1212+ | 17.51 грн |
| 2SC3332T |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
Description: TRANS NPN 160V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
на замовлення 3180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1514+ | 14.01 грн |
| FOD410TV |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 294.79 грн |
| 10+ | 200.52 грн |
| 100+ | 164.22 грн |
| 1000+ | 119.17 грн |
| FOD4116TV |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 1.3mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 1.3mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.98 грн |
| 10+ | 260.91 грн |
| 100+ | 213.67 грн |
| 1000+ | 155.05 грн |
| MT9F002I12STCV-DP |
Виробник: onsemi
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 4384H x 3288V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 13.7
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 4384H x 3288V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 13.7
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од. на суму грн.
| DM74ALS648NT |
Виробник: onsemi
Description: IC TXRX NON-INVERT 24DIP
Packaging: Bag
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Number of Bits per Element: 8
Supplier Device Package: 24-PDIP
Description: IC TXRX NON-INVERT 24DIP
Packaging: Bag
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Number of Bits per Element: 8
Supplier Device Package: 24-PDIP
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| NVMFWS020N06CT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 41.32 грн |
| 3000+ | 37.94 грн |
| 4500+ | 37.53 грн |
| 7500+ | 34.95 грн |
| NVMFWS020N06CT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.54 грн |
| 10+ | 89.25 грн |
| 100+ | 60.43 грн |
| 500+ | 45.12 грн |
| NVMFWS003P03P8ZT1G |
![]() |
Виробник: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.81 грн |
| 10+ | 148.70 грн |
| 100+ | 103.39 грн |
| 500+ | 78.83 грн |
| NTMFWS1D5N08XT1G |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
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од. на суму грн.
| NTMFWS1D5N08XT1G |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
на замовлення 1221 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 296.42 грн |
| 10+ | 187.31 грн |
| 100+ | 131.49 грн |
| 500+ | 101.04 грн |
| NVMFWS003N10MCT1G |
![]() |
Виробник: onsemi
Description: PTNG 100V STD SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V STD SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
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| NVMFWS003N10MCT1G |
![]() |
Виробник: onsemi
Description: PTNG 100V STD SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V STD SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.24 грн |
| 10+ | 201.15 грн |
| 100+ | 155.76 грн |
| 500+ | 126.77 грн |
| NVMFWS002N10MCLT1G |
![]() |
Виробник: onsemi
Description: PTNG 100V LL SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
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| NVMFWS002N10MCLT1G |
![]() |
Виробник: onsemi
Description: PTNG 100V LL SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
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| NZL6V8AXV3T3G |
![]() |
Виробник: onsemi
Description: TVS DIODE 4.5VWM 7.9VC SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SC-89-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 7.9V
Power - Peak Pulse: 73W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 4.5VWM 7.9VC SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SC-89-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 7.9V
Power - Peak Pulse: 73W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| NZL5V6ATT1G |
Виробник: onsemi
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| NZL5V6ATT1G |
Виробник: onsemi
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| NZ23C5V6ALT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
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| NZ23C5V6ALT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
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| NZ23C5V6ALT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
на замовлення 2528500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.24 грн |
| 74LVTH16245MTD |
![]() |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
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| 74LVTH16245MTDX |
![]() |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
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| MBR3045PTG |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOT 45V 15A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARRAY SCHOT 45V 15A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 1826 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 210+ | 100.22 грн |
| SMMBZ33VALT1G |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.42 грн |
| 6000+ | 5.91 грн |
| SMMBZ33VALT1G |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.93 грн |
| 14+ | 23.98 грн |
| 100+ | 12.14 грн |
| 500+ | 9.29 грн |
| 1000+ | 6.89 грн |
| BZX79C15 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
на замовлення 11983 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.80 грн |
| 75+ | 4.25 грн |
| 156+ | 2.02 грн |
| 500+ | 1.71 грн |
| 1000+ | 1.33 грн |
| 2000+ | 1.30 грн |
| 5000+ | 1.24 грн |
| 10000+ | 1.18 грн |
| NLV74HC138ADTR2G |
![]() |
Виробник: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 28813 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 2201.05 грн |
| BC817-40LT1 |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
на замовлення 465848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.90 грн |
| BC817-40LT3 |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 930000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.90 грн |
| MMBD6050LT1 |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| MMBD6050 |
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Виробник: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| MMBD6050 |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| MMBD6050 |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 19302 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10645+ | 2.28 грн |
| MC74AC4040D |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
на замовлення 1225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 833+ | 28.03 грн |
| MC74AC4040N |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
на замовлення 955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 955+ | 28.17 грн |
| MC74AC4040NG |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
на замовлення 872 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 317+ | 72.34 грн |
| MC74AC4040MELG |
Виробник: onsemi
Description: IC BINARY COUNTR 12BIT 16SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTR 12BIT 16SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
на замовлення 14974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 386+ | 59.40 грн |
| SMF11AT1 |
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Виробник: onsemi
Description: TVS DIODE 11VWM 18.2VC SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 11VWM 18.2VC SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1480+ | 14.93 грн |
| SMF11AT1G |
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Виробник: onsemi
Description: 200W TRANSIENT VOLTAGE SUPPRESSO
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 200W TRANSIENT VOLTAGE SUPPRESSO
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 65251 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2420+ | 8.96 грн |
| 3N256 |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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В кошику
од. на суму грн.
| FGHL40T65LQDT |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/364ns
Switching Energy: 620µJ (on), 1.03mJ (off)
Test Condition: 400V, 20A, 4.7Ohm, 15V
Gate Charge: 414 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 273 W
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/364ns
Switching Energy: 620µJ (on), 1.03mJ (off)
Test Condition: 400V, 20A, 4.7Ohm, 15V
Gate Charge: 414 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 273 W
на замовлення 1793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 303.77 грн |
| 30+ | 164.64 грн |
| 120+ | 137.68 грн |
| MPSW01 |
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Виробник: onsemi
Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 15439 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2219+ | 10.90 грн |
| MPSW01G |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 1A TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS NPN 30V 1A TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 59557 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1665+ | 14.01 грн |
| MPSW05G |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.83 грн |
| MPSW06G |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 54576 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1665+ | 14.10 грн |
| MPSW51ARLRAG |
![]() |
Виробник: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
на замовлення 135912 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1366+ | 15.44 грн |
| MPSW51G |
![]() |
Виробник: onsemi
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 13381 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1366+ | 15.44 грн |
| MPSW55G |
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Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1366+ | 15.44 грн |




























