| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMBTH10 | onsemi |
Description: RF TRANS NPN 25V 650MHZ SOT-23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 225mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz Supplier Device Package: SOT-23-3 |
на замовлення 87000 шт: термін постачання 21-31 дні (днів) |
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NCP1400ASN22T1 | onsemi |
Description: IC REG BOOST 2.2V 80MA 5TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 80mA (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 2.2V Topology: Boost Supplier Device Package: 5-TSOP Synchronous Rectifier: No Voltage - Input (Min): 0.8V Voltage - Output (Min/Fixed): 2.2V |
на замовлення 92940 шт: термін постачання 21-31 дні (днів) |
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NCP1400ASN45T1 | onsemi |
Description: IC REG BOOST 4.5V 100MA 5TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 4.5V Topology: Boost Supplier Device Package: 5-TSOP Synchronous Rectifier: No Voltage - Input (Min): 0.8V Voltage - Output (Min/Fixed): 4.5V |
на замовлення 20233 шт: термін постачання 21-31 дні (днів) |
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NCP1400ASN27T1G | onsemi |
Description: IC REG BOOST 2.7V 100MA 5TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 2.7V Topology: Boost Supplier Device Package: 5-TSOP Synchronous Rectifier: No Voltage - Input (Min): 0.8V Voltage - Output (Min/Fixed): 2.7V |
на замовлення 16995 шт: термін постачання 21-31 дні (днів) |
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NCP1400ASN22T1G | onsemi |
Description: IC REG BOOST 2.2V 80MA 5TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 80mA (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 2.2V Topology: Boost Supplier Device Package: 5-TSOP Synchronous Rectifier: No Voltage - Input (Min): 0.8V Voltage - Output (Min/Fixed): 2.2V |
на замовлення 14863 шт: термін постачання 21-31 дні (днів) |
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NCP1400ASN19T1G | onsemi |
Description: IC REG BOOST 1.9V 80MA 5TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 80mA (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 1.9V Topology: Boost Supplier Device Package: 5-TSOP Synchronous Rectifier: No Voltage - Input (Min): 0.8V Voltage - Output (Min/Fixed): 1.9V |
на замовлення 5810 шт: термін постачання 21-31 дні (днів) |
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NCP1400ASN27T1 | onsemi |
Description: IC REG BOOST 2.7V 100MA 5TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 180kHz Voltage - Input (Max): 2.7V Topology: Boost Supplier Device Package: 5-TSOP Synchronous Rectifier: No Voltage - Input (Min): 0.8V Voltage - Output (Min/Fixed): 2.7V |
на замовлення 2902 шт: термін постачання 21-31 дні (днів) |
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| LB1668M-W-AH | onsemi |
Description: IC MOTOR DRVR 1.5A 14SOICPackaging: Bulk Package / Case: 14-LSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 6.4V ~ 7V Applications: DC Motors, General Purpose Technology: Bipolar Voltage - Load: 31V ~ 60V Supplier Device Package: 14-SOIC/MFPS |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| LB1696-E | onsemi |
Description: IC MOTOR DRIVER 20DIP Packaging: Tube Package / Case: 20-DIP (0.500", 12.70mm) Mounting Type: Through Hole Supplier Device Package: 20-DIP |
на замовлення 9099 шт: термін постачання 21-31 дні (днів) |
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FAN7621SJX | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V Supplier Device Package: 16-SOP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 14.5 V Control Features: Frequency Control Power (Watts): 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN7621SJX | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOPPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V Supplier Device Package: 16-SOP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 14.5 V Control Features: Frequency Control Power (Watts): 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5H663NLT1G | onsemi |
Description: MOSFET N-CH 60V 16.2A/67A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 56µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5H663NLT1G | onsemi |
Description: MOSFET N-CH 60V 16.2A/67A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 56µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 5976 шт: термін постачання 21-31 дні (днів) |
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RFP15P05 | onsemi |
Description: MOSFET P-CH 50V 15A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KAI-04050-FBA-JB-B2-T | onsemi |
Description: IMAGE SENSOR CCD 4.1MP 67CPGAPackaging: Tray Package / Case: 67-BCPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 2336H x 1752V Supplier Device Package: 67-CPGA (33.02x20.07) Frames per Second: 32.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KAI-04050-FBA-JB-B2 | onsemi |
Description: IMAGE SENSOR CCD 4.1MP 67CPGAPackaging: Bulk Package / Case: 67-BCPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 2336H x 1752V Supplier Device Package: 67-CPGA (33.02x20.07) Frames per Second: 32.0 |
на замовлення 189 шт: термін постачання 21-31 дні (днів) |
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74VHC273M | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 110 MHz Input Capacitance: 4 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LP2950ACDT-3.3RK | onsemi |
Description: IC REG LINEAR 3.3V 100MA DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 120 µA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 3.3V Voltage Dropout (Max): 0.45V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 12 mA |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NGTB40N60IHLWG | onsemi |
Description: IGBT TRENCH FS 600V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 400 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 130 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
на замовлення 451312 шт: термін постачання 21-31 дні (днів) |
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MC74HCT4051ADTR2G | onsemi |
Description: IC MUX 8:1 100OHM 16TSSOP Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2V ~ 12V Crosstalk: -60dB @ 1MHz Switch Circuit: SP8T Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF, 130pF Current - Leakage (IS(off)) (Max): 200nA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC4051AADR2G | onsemi |
Description: MC74HC4051AADR2G Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 80MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SP8T Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZBZX84C12ET3G | onsemi |
Description: DIODE ZENER 12V 250MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZBZX84C12ET3G | onsemi |
Description: DIODE ZENER 12V 250MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
на замовлення 8979 шт: термін постачання 21-31 дні (днів) |
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KSH210TF | onsemi |
Description: TRANS PNP 25V 5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NIS5431MT1TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFN Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-WDFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLAST9431MTR2G | onsemi |
Description: IC SWITCH DPDT X 1 25OHM 16WQFNPackaging: Bulk Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 200MHz Supplier Device Package: 16-WQFN (1.8x2.6) Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 2Ohm Switch Time (Ton, Toff) (Max): 14ns, 8ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 1 |
на замовлення 29650 шт: термін постачання 21-31 дні (днів) |
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NLAS9431MTR2G | onsemi |
Description: IC SWITCH DPDT X 2 25OHM 16WQFNPackaging: Bulk Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 175MHz Supplier Device Package: 16-WQFN (1.8x2.6) Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Crosstalk: -98dB @ 100kHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Switch Time (Ton, Toff) (Max): 14ns, 5ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 10µA Number of Circuits: 2 |
на замовлення 23320 шт: термін постачання 21-31 дні (днів) |
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| LC823435TA-2H | onsemi |
Description: PORTABLE SOUND SOLUTIONS Packaging: Bulk |
на замовлення 14850 шт: термін постачання 21-31 дні (днів) |
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FQP6N60C | onsemi |
Description: MOSFET N-CH 600V 5.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6N137SD | onsemi |
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6N137SD | onsemi |
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMDPackaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 17400 шт: термін постачання 21-31 дні (днів) |
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FQI7N60TU | onsemi |
Description: MOSFET N-CH 600V 7.4A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V Power Dissipation (Max): 3.13W (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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FCPF7N60YDTU | onsemi |
Description: MOSFET N-CH 600V 7A TO220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC856BLT1 | onsemi |
Description: TRANS PNP 65V 100MA SOT23Packaging: Bulk |
на замовлення 549133 шт: термін постачання 21-31 дні (днів) |
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NRVBS130NT3G | onsemi |
Description: DIODE SCHOTTKY 30V 1A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LC709205FXE-01TBG | onsemi |
Description: IC FUEL GAUGE LI-ION 1C 12WLCSPPackaging: Tape & Reel (TR) Package / Case: 12-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 12-WLCSP (1.48x1.91) Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LC709205FXE-01TBG | onsemi |
Description: IC FUEL GAUGE LI-ION 1C 12WLCSPPackaging: Cut Tape (CT) Package / Case: 12-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 12-WLCSP (1.48x1.91) Fault Protection: Over Current, Over Voltage |
на замовлення 1363 шт: термін постачання 21-31 дні (днів) |
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LM2901VN | onsemi |
Description: IC COMP QUAD SGL SUPPLY 14DIPPackaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCA22N60N | onsemi |
Description: MOSFET N-CH 600V 22A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MM74HCT244MTC | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 7.2mA, 7.2mA Supplier Device Package: 20-TSSOP |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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74LVXC3245QSC | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 24QSOPPackaging: Tube Package / Case: 24-SSOP (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-QSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 2.7 V ~ 3.6 V Voltage - VCCB: 3 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 6735 шт: термін постачання 21-31 дні (днів) |
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74LVXC3245QSC | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 24QSOPPackaging: Tube Package / Case: 24-SSOP (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-QSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 2.7 V ~ 3.6 V Voltage - VCCB: 3 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVXC3245QSCX | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 24QSOPPackaging: Tape & Reel (TR) Package / Case: 24-SSOP (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-QSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 2.7 V ~ 3.6 V Voltage - VCCB: 3 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVXC3245QSCX | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 24QSOPPackaging: Cut Tape (CT) Package / Case: 24-SSOP (0.154", 3.90mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-QSOP Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 2.7 V ~ 3.6 V Voltage - VCCB: 3 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMT185N60S5H | onsemi |
Description: SUPERFET5 FAST 185MOHM PQFN88Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V Power Dissipation (Max): 116W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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3SK264-5-TG-E | onsemi |
Description: RF MOSFET 6V CP4Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 200MHz Configuration: N-Channel Dual Gate Gain: 23dB Technology: MOSFET (Metal Oxide) Noise Figure: 2.2dB Supplier Device Package: 4-CP Voltage - Rated: 15 V Voltage - Test: 6 V Current - Test: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSD261CGTA | onsemi |
Description: TRANS NPN 20V 0.5A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTBG020N120SC1 | onsemi |
Description: SICFET N-CH 1200V 8.6A/98A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NTBG020N120SC1 | onsemi |
Description: SICFET N-CH 1200V 8.6A/98A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V |
на замовлення 1007 шт: термін постачання 21-31 дні (днів) |
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NVBG020N120SC1 | onsemi |
Description: MOSFET N-CH 1200V 8.6A/98A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVBG020N120SC1 | onsemi |
Description: MOSFET N-CH 1200V 8.6A/98A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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NTHL060N065SC1 | onsemi |
Description: SIC MOS TO247-3L 650VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 234 шт: термін постачання 21-31 дні (днів) |
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NTBG060N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 4Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NTBG060N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 4Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 4335 шт: термін постачання 21-31 дні (днів) |
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NTH4L060N065SC1 | onsemi |
Description: SIC MOS TO247-4L 650VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 477 шт: термін постачання 21-31 дні (днів) |
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NVH4L060N065SC1 | onsemi |
Description: SIC MOS TO247-4L 650VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 438 шт: термін постачання 21-31 дні (днів) |
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NVBG060N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVBG060N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 1576 шт: термін постачання 21-31 дні (днів) |
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NVHL060N065SC1 | onsemi |
Description: SIC MOS TO247-3L 650VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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CAT24C64VP2I-GT3 | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBTH10 |
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Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3
Description: RF TRANS NPN 25V 650MHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6045+ | 3.36 грн |
| NCP1400ASN22T1 |
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Виробник: onsemi
Description: IC REG BOOST 2.2V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 80mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.2V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.2V
Description: IC REG BOOST 2.2V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 80mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.2V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.2V
на замовлення 92940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 956+ | 20.82 грн |
| NCP1400ASN45T1 |
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Виробник: onsemi
Description: IC REG BOOST 4.5V 100MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 4.5V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 4.5V
Description: IC REG BOOST 4.5V 100MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 4.5V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 4.5V
на замовлення 20233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 956+ | 20.82 грн |
| NCP1400ASN27T1G |
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Виробник: onsemi
Description: IC REG BOOST 2.7V 100MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.7V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.7V
Description: IC REG BOOST 2.7V 100MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.7V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.7V
на замовлення 16995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 699+ | 28.88 грн |
| NCP1400ASN22T1G |
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Виробник: onsemi
Description: IC REG BOOST 2.2V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 80mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.2V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.2V
Description: IC REG BOOST 2.2V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 80mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.2V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.2V
на замовлення 14863 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 699+ | 28.88 грн |
| NCP1400ASN19T1G |
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Виробник: onsemi
Description: IC REG BOOST 1.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 80mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 1.9V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 1.9V
Description: IC REG BOOST 1.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 80mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 1.9V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 1.9V
на замовлення 5810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 699+ | 28.88 грн |
| NCP1400ASN27T1 |
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Виробник: onsemi
Description: IC REG BOOST 2.7V 100MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.7V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.7V
Description: IC REG BOOST 2.7V 100MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 180kHz
Voltage - Input (Max): 2.7V
Topology: Boost
Supplier Device Package: 5-TSOP
Synchronous Rectifier: No
Voltage - Input (Min): 0.8V
Voltage - Output (Min/Fixed): 2.7V
на замовлення 2902 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 699+ | 28.88 грн |
| LB1668M-W-AH |
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Виробник: onsemi
Description: IC MOTOR DRVR 1.5A 14SOIC
Packaging: Bulk
Package / Case: 14-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 6.4V ~ 7V
Applications: DC Motors, General Purpose
Technology: Bipolar
Voltage - Load: 31V ~ 60V
Supplier Device Package: 14-SOIC/MFPS
Description: IC MOTOR DRVR 1.5A 14SOIC
Packaging: Bulk
Package / Case: 14-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 6.4V ~ 7V
Applications: DC Motors, General Purpose
Technology: Bipolar
Voltage - Load: 31V ~ 60V
Supplier Device Package: 14-SOIC/MFPS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 505+ | 41.26 грн |
| LB1696-E |
Виробник: onsemi
Description: IC MOTOR DRIVER 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.500", 12.70mm)
Mounting Type: Through Hole
Supplier Device Package: 20-DIP
Description: IC MOTOR DRIVER 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.500", 12.70mm)
Mounting Type: Through Hole
Supplier Device Package: 20-DIP
на замовлення 9099 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 62+ | 326.91 грн |
| FAN7621SJX |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 16-SOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRDG 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 16-SOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: Frequency Control
Power (Watts): 200 W
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| FAN7621SJX |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 16-SOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRDG 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 16-SOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: Frequency Control
Power (Watts): 200 W
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| NVMFS5H663NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 39.02 грн |
| 3000+ | 35.37 грн |
| NVMFS5H663NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5976 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.64 грн |
| 10+ | 69.94 грн |
| 100+ | 54.41 грн |
| 500+ | 43.28 грн |
| RFP15P05 |
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Виробник: onsemi
Description: MOSFET P-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Description: MOSFET P-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
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| KAI-04050-FBA-JB-B2-T |
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Виробник: onsemi
Description: IMAGE SENSOR CCD 4.1MP 67CPGA
Packaging: Tray
Package / Case: 67-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 2336H x 1752V
Supplier Device Package: 67-CPGA (33.02x20.07)
Frames per Second: 32.0
Description: IMAGE SENSOR CCD 4.1MP 67CPGA
Packaging: Tray
Package / Case: 67-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 2336H x 1752V
Supplier Device Package: 67-CPGA (33.02x20.07)
Frames per Second: 32.0
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| KAI-04050-FBA-JB-B2 |
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Виробник: onsemi
Description: IMAGE SENSOR CCD 4.1MP 67CPGA
Packaging: Bulk
Package / Case: 67-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 2336H x 1752V
Supplier Device Package: 67-CPGA (33.02x20.07)
Frames per Second: 32.0
Description: IMAGE SENSOR CCD 4.1MP 67CPGA
Packaging: Bulk
Package / Case: 67-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 2336H x 1752V
Supplier Device Package: 67-CPGA (33.02x20.07)
Frames per Second: 32.0
на замовлення 189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 33373.43 грн |
| 74VHC273M |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 110 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 110 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 8
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| LP2950ACDT-3.3RK |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 100MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.45V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
Description: IC REG LINEAR 3.3V 100MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.45V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 330+ | 60.66 грн |
| NGTB40N60IHLWG |
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Виробник: onsemi
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
на замовлення 451312 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 109+ | 186.31 грн |
| MC74HCT4051ADTR2G |
Виробник: onsemi
Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP8T
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF, 130pF
Current - Leakage (IS(off)) (Max): 200nA
Number of Circuits: 1
Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP8T
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF, 130pF
Current - Leakage (IS(off)) (Max): 200nA
Number of Circuits: 1
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| MC74HC4051AADR2G |
Виробник: onsemi
Description: MC74HC4051AADR2G
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP8T
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: MC74HC4051AADR2G
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP8T
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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| SZBZX84C12ET3G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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| SZBZX84C12ET3G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
на замовлення 8979 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.12 грн |
| 36+ | 8.54 грн |
| 100+ | 5.28 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.19 грн |
| 2000+ | 2.82 грн |
| 5000+ | 2.38 грн |
| KSH210TF |
![]() |
Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
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| NIS5431MT1TXG |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (3x3)
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (3x3)
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| NLAST9431MTR2G |
![]() |
Виробник: onsemi
Description: IC SWITCH DPDT X 1 25OHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Description: IC SWITCH DPDT X 1 25OHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
на замовлення 29650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 376+ | 59.73 грн |
| NLAS9431MTR2G |
![]() |
Виробник: onsemi
Description: IC SWITCH DPDT X 2 25OHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 175MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Crosstalk: -98dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Switch Time (Ton, Toff) (Max): 14ns, 5ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 10µA
Number of Circuits: 2
Description: IC SWITCH DPDT X 2 25OHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 175MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Crosstalk: -98dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Switch Time (Ton, Toff) (Max): 14ns, 5ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 10µA
Number of Circuits: 2
на замовлення 23320 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 376+ | 57.35 грн |
| LC823435TA-2H |
на замовлення 14850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 489.63 грн |
| FQP6N60C |
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Виробник: onsemi
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
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| 6N137SD |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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| 6N137SD |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 17400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 216+ | 92.66 грн |
| FQI7N60TU |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 7.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Description: MOSFET N-CH 600V 7.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.79 грн |
| 10+ | 140.19 грн |
| 100+ | 101.80 грн |
| 500+ | 79.66 грн |
| FCPF7N60YDTU |
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Виробник: onsemi
Description: MOSFET N-CH 600V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 600V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
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| BC856BLT1 |
![]() |
на замовлення 549133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.73 грн |
| NRVBS130NT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Qualification: AEC-Q101
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| LC709205FXE-01TBG |
![]() |
Виробник: onsemi
Description: IC FUEL GAUGE LI-ION 1C 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Fault Protection: Over Current, Over Voltage
Description: IC FUEL GAUGE LI-ION 1C 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Fault Protection: Over Current, Over Voltage
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| LC709205FXE-01TBG |
![]() |
Виробник: onsemi
Description: IC FUEL GAUGE LI-ION 1C 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Fault Protection: Over Current, Over Voltage
Description: IC FUEL GAUGE LI-ION 1C 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Fault Protection: Over Current, Over Voltage
на замовлення 1363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 260.42 грн |
| 10+ | 159.91 грн |
| 25+ | 136.32 грн |
| 100+ | 102.86 грн |
| 250+ | 90.55 грн |
| 500+ | 82.97 грн |
| 1000+ | 75.36 грн |
| FCA22N60N |
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Виробник: onsemi
Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Description: MOSFET N-CH 600V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
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| MM74HCT244MTC |
![]() |
Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 7.2mA, 7.2mA
Supplier Device Package: 20-TSSOP
на замовлення 222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.42 грн |
| 10+ | 33.91 грн |
| 75+ | 27.34 грн |
| 150+ | 24.23 грн |
| 74LVXC3245QSC |
![]() |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
на замовлення 6735 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 281+ | 73.79 грн |
| 74LVXC3245QSC |
![]() |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
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| 74LVXC3245QSCX |
![]() |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
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| 74LVXC3245QSCX |
![]() |
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-QSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 2.7 V ~ 3.6 V
Voltage - VCCB: 3 V ~ 5.5 V
Number of Circuits: 1
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| NTMT185N60S5H |
![]() |
Виробник: onsemi
Description: SUPERFET5 FAST 185MOHM PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Description: SUPERFET5 FAST 185MOHM PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 367.09 грн |
| 3SK264-5-TG-E |
![]() |
Виробник: onsemi
Description: RF MOSFET 6V CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
Description: RF MOSFET 6V CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
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| KSD261CGTA |
![]() |
Виробник: onsemi
Description: TRANS NPN 20V 0.5A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Description: TRANS NPN 20V 0.5A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
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| NTBG020N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 1630.76 грн |
| NTBG020N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Description: SICFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
на замовлення 1007 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2466.91 грн |
| 10+ | 1922.11 грн |
| NVBG020N120SC1 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 2346.38 грн |
| NVBG020N120SC1 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3307.77 грн |
| 10+ | 2765.60 грн |
| NTHL060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 814.98 грн |
| 30+ | 469.39 грн |
| 120+ | 400.28 грн |
| NTBG060N065SC1 |
![]() |
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 367.08 грн |
| NTBG060N065SC1 |
![]() |
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 4335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 818.12 грн |
| 10+ | 546.34 грн |
| 100+ | 432.67 грн |
| NTH4L060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 477 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 854.98 грн |
| 30+ | 494.72 грн |
| 120+ | 422.66 грн |
| NVH4L060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 438 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1140.50 грн |
| 30+ | 676.91 грн |
| 120+ | 584.56 грн |
| NVBG060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 680.21 грн |
| NVBG060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 1576 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1316.99 грн |
| 10+ | 904.29 грн |
| 100+ | 801.74 грн |
| NVHL060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1110.70 грн |
| 10+ | 754.58 грн |
| 450+ | 525.61 грн |
| CAT24C64VP2I-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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