| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVBG020N120SC1 | onsemi |
Description: MOSFET N-CH 1200V 8.6A/98A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVBG020N120SC1 | onsemi |
Description: MOSFET N-CH 1200V 8.6A/98A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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NTHL060N065SC1 | onsemi |
Description: SIC MOS TO247-3L 650VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 16884 шт: термін постачання 21-31 дні (днів) |
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NTBG060N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 4Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NTBG060N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 4Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 4455 шт: термін постачання 21-31 дні (днів) |
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NTH4L060N065SC1 | onsemi |
Description: SIC MOS TO247-4L 650VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
на замовлення 8129 шт: термін постачання 21-31 дні (днів) |
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NVH4L060N065SC1 | onsemi |
Description: SIC MOS TO247-4L 650VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 1343 шт: термін постачання 21-31 дні (днів) |
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NVBG060N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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NVBG060N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 3176 шт: термін постачання 21-31 дні (днів) |
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NVHL060N065SC1 | onsemi |
Description: SIC MOS TO247-3L 650VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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CAT24C64VP2I-GT3 | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT24C64VP2I-GT3 | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFNPackaging: Bulk Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 24773 шт: термін постачання 21-31 дні (днів) |
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LP2950ACDT-3.3 | onsemi |
Description: IC REG LINEAR 3.3V 100MA DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 120 µA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 3.3V Voltage Dropout (Max): 0.45V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 12 mA |
на замовлення 972 шт: термін постачання 21-31 дні (днів) |
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CS59201GDR8 | onsemi |
Description: IC DIFFERENTIAL 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Differential Applications: Winchester Servo Preamplifier Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MM74HC04MTC | onsemi |
Description: IC INVERTER 6CH 1-INP 14TSSOPPackaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NBXDBB017LN1TAG | onsemi |
Description: IC OSC XTAL DUAL FREQ 6-CLCCPackaging: Tape & Reel (TR) Package / Case: 6-CLCC Mounting Type: Surface Mount Frequency: 156.25MHz, 312.5MHz Type: Oscillator, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.97V ~ 3.63V Supplier Device Package: 6-CLCC (7x5) Current - Supply: 78 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC858ALT1 | onsemi |
Description: TRANS PNP 30V 0.1A SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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| PCFFS40120AF | onsemi |
Description: DIODE SIL CARB 1.2KV WAFER DIEPackaging: Tray Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2250pf @ 1V, 100kHz Current - Average Rectified (Io): 61A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 629 шт: термін постачання 21-31 дні (днів) |
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SMBT1505T3G | onsemi |
Description: DIODE STD REC SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBT1505T3G | onsemi |
Description: DIODE STD REC SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBT2001T1G | onsemi |
Description: DIODE STD REC SC74 Packaging: Tape & Reel (TR) |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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SMBT2001T1G | onsemi |
Description: DIODE STD REC SC74 Packaging: Cut Tape (CT) |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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MBR30H100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V 15A TO-220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V |
на замовлення 3280 шт: термін постачання 21-31 дні (днів) |
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MBR30H100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V 15A TO-220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ASX340AT2C00XPED0-TRBR | onsemi |
Description: SENSOR IMAGE MONO CMOS 48-ILCC Packaging: Tape & Reel (TR) Package / Case: 63-LFBGA Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V, 2.8V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ASX340AT3C00XPED0-DRBR | onsemi |
Description: VGA 1/4 CIS SOCPackaging: Tray Package / Case: 63-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
на замовлення 2590 шт: термін постачання 21-31 дні (днів) |
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ASX340AT3C00XPED0-TPBR | onsemi |
Description: VGA 1/4 CIS SOCPackaging: Tape & Reel (TR) Package / Case: 63-LFBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ASX340AT3C00XPED0-TPBR | onsemi |
Description: VGA 1/4 CIS SOCPackaging: Cut Tape (CT) Package / Case: 63-LFBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
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ASX340AT2C00XPED0-TPBR | onsemi |
Description: SENSOR IMAGE MONO CMOS 48-ILCCPackaging: Tape & Reel (TR) Package / Case: 63-LFBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.66V ~ 2.94V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ASX340AT2C00XPED0-TPBR | onsemi |
Description: SENSOR IMAGE MONO CMOS 48-ILCCPackaging: Cut Tape (CT) Package / Case: 63-LFBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.66V ~ 2.94V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
на замовлення 541 шт: термін постачання 21-31 дні (днів) |
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ASX344ATSC00XUEA0-DRBR | onsemi |
Description: IMAGE SENSORPackaging: Tray Package / Case: 63-LBGA Type: CMOS Pixel Size: 5.6µm x 5.6µm Supplier Device Package: 63-IBGA (9x9) Frames per Second: 60.0 |
на замовлення 1808 шт: термін постачання 21-31 дні (днів) |
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ASX344ATSC00XUEA0-DPBR | onsemi |
Description: IMAGE SENSORPackaging: Tray Package / Case: 63-LBGA Type: CMOS Pixel Size: 5.6µm x 5.6µm Supplier Device Package: 63-IBGA (9x9) Frames per Second: 60.0 |
на замовлення 2590 шт: термін постачання 21-31 дні (днів) |
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ASX340AT3C00XPED0-DPBR2 | onsemi |
Description: VGA 1/4 CIS SOCPackaging: Tray Package / Case: 63-LFBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.8V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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ASX344ATSC00XUEA0-DPBR2 | onsemi |
Description: VGA 1/4 CIS SOC Packaging: Tray |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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ASX340AT2C00XPED0-DPBR | onsemi |
Description: SENSOR IMAGE MONO CMOS 48-ILCCPackaging: Tray Package / Case: 63-LFBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ASX344ATSC00XUEA0-TRBR | onsemi |
Description: IMAGE SENSORPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS Pixel Size: 5.6µm x 5.6µm Supplier Device Package: 63-IBGA (9x9) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ASX344ATSC00XUEA0-TRBR | onsemi |
Description: IMAGE SENSORPackaging: Cut Tape (CT) Package / Case: 63-LBGA Type: CMOS Pixel Size: 5.6µm x 5.6µm Supplier Device Package: 63-IBGA (9x9) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQD17N08LTM | onsemi |
Description: MOSFET N-CH 80V 12.9A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQD17N08LTM | onsemi |
Description: MOSFET N-CH 80V 12.9A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL3700S | onsemi |
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Input Type: AC, DC Current - Output / Channel: 30mA Voltage - Isolation: 2500Vrms Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 6µs, 25µs Rise / Fall Time (Typ): 45µs, 0.5µs Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL3700SDV | onsemi |
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Input Type: AC, DC Current - Output / Channel: 30mA Voltage - Isolation: 2500Vrms Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 6µs, 25µs Rise / Fall Time (Typ): 45µs, 0.5µs Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL3700SV | onsemi |
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Input Type: AC, DC Current - Output / Channel: 30mA Voltage - Isolation: 2500Vrms Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 6µs, 25µs Rise / Fall Time (Typ): 45µs, 0.5µs Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MM74HC00MTC | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 19710 шт: термін постачання 21-31 дні (днів) |
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MM74HC00MTC | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLJ74HC00ADTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOP Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 35364 шт: термін постачання 21-31 дні (днів) |
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| NLVVHC1GT04DFT2 | onsemi |
Description: IC BUFFER/LEVEL SHIFTER SC-88A Packaging: Bulk Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Input Logic Level - High: 1.4V ~ 2V Input Logic Level - Low: 0.53V ~ 0.8V Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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| NLHV18T3244MNTWG | onsemi |
Description: IC LEVEL SHIFTER 18CH 50QFN Packaging: Bulk |
на замовлення 23196 шт: термін постачання 21-31 дні (днів) |
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74HC574DTR2G | onsemi |
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 28 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Number of Bits per Element: 8 |
на замовлення 98114 шт: термін постачання 21-31 дні (днів) |
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FAN501MPX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 10MLPPackaging: Tape & Reel (TR) Package / Case: 10-WQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Duty Cycle: 68.5% Frequency - Switching: 85kHz ~ 140kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5.8V ~ 30V Supplier Device Package: 10-MLP (4x3) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 17.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN501MPX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 10MLPPackaging: Cut Tape (CT) Package / Case: 10-WQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Duty Cycle: 68.5% Frequency - Switching: 85kHz ~ 140kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5.8V ~ 30V Supplier Device Package: 10-MLP (4x3) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 17.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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USB1T1103MPX | onsemi |
Description: LINE TRANSCEIVER, 1 DRIVER, 1 RCPackaging: Bulk |
на замовлення 24341 шт: термін постачання 21-31 дні (днів) |
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| FAN21SV04EMPX | onsemi |
Description: IC REGPackaging: Bulk Package / Case: 25-WQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 4A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 600kHz Voltage - Input (Max): 24V Topology: Buck Supplier Device Package: 25-MLP (6x5) Synchronous Rectifier: Yes Voltage - Output (Max): 19.2V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.8V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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FAN21SV06MPX | onsemi |
Description: IC REG BUCK ADJ 6A 25MLPPackaging: Tape & Reel (TR) Package / Case: 25-WQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 6A Operating Temperature: -10°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 600kHz Voltage - Input (Max): 24V Topology: Buck Supplier Device Package: 25-MLP (6x5) Synchronous Rectifier: Yes Voltage - Output (Max): 19.2V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCR169DRLRAG | onsemi |
Description: SCR 400V 800MA TO-92 (TO-226)Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 110°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 10 µA Supplier Device Package: TO-92 (TO-226) Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCR169DG | onsemi |
Description: SCR 400V 800MA TO-92 (TO-226)Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 110°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 10 µA Supplier Device Package: TO-92 (TO-226) Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA143TM3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT723Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 4.7 kOhms |
на замовлення 1011000 шт: термін постачання 21-31 дні (днів) |
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NUD4001DR2 | onsemi |
Description: IC LED DRIVER LINEAR 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 1 Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: 8-SOIC Voltage - Supply (Max): 30V Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTYS003N04CTWG | onsemi |
Description: T6 40V N-CH SL IN LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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NVTYS003N04CLTWG | onsemi |
Description: T6 40V N-CH LL IN LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5870 шт: термін постачання 21-31 дні (днів) |
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| NXH50C120L2C2ES1G | onsemi |
Description: IGBT MOD 1200V 50A 26DIP Packaging: Bulk Package / Case: 26-PowerDIP Module (1.199", 47.20mm) Mounting Type: Through Hole Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: 26-DIP Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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| NVBG020N120SC1 |
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Виробник: onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 2547.43 грн |
| NVBG020N120SC1 |
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Виробник: onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3591.19 грн |
| 10+ | 3002.56 грн |
| NTHL060N065SC1 |
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Виробник: onsemi
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 16884 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 839.68 грн |
| 30+ | 484.00 грн |
| 120+ | 412.74 грн |
| 510+ | 363.97 грн |
| NTBG060N065SC1 |
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Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 405.01 грн |
| NTBG060N065SC1 |
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Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 4455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 843.93 грн |
| 10+ | 563.38 грн |
| 100+ | 477.37 грн |
| NTH4L060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
на замовлення 8129 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 882.26 грн |
| 30+ | 510.10 грн |
| 120+ | 435.82 грн |
| 510+ | 387.72 грн |
| NVH4L060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 1343 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1000.63 грн |
| 30+ | 600.64 грн |
| NVBG060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 750.48 грн |
| NVBG060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 3176 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1358.30 грн |
| 10+ | 932.41 грн |
| 100+ | 884.57 грн |
| NVHL060N065SC1 |
![]() |
Виробник: onsemi
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1145.40 грн |
| 10+ | 778.07 грн |
| 450+ | 579.91 грн |
| CAT24C64VP2I-GT3 |
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Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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| CAT24C64VP2I-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8TDFN
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 24773 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 673+ | 33.10 грн |
| LP2950ACDT-3.3 |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 100MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.45V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
Description: IC REG LINEAR 3.3V 100MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.45V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
на замовлення 972 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 330+ | 66.93 грн |
| CS59201GDR8 |
![]() |
Виробник: onsemi
Description: IC DIFFERENTIAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Differential
Applications: Winchester Servo Preamplifier
Supplier Device Package: 8-SOIC
Description: IC DIFFERENTIAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Differential
Applications: Winchester Servo Preamplifier
Supplier Device Package: 8-SOIC
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од. на суму грн.
| MM74HC04MTC |
![]() |
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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од. на суму грн.
| NBXDBB017LN1TAG |
![]() |
Виробник: onsemi
Description: IC OSC XTAL DUAL FREQ 6-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 6-CLCC
Mounting Type: Surface Mount
Frequency: 156.25MHz, 312.5MHz
Type: Oscillator, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Supplier Device Package: 6-CLCC (7x5)
Current - Supply: 78 mA
Description: IC OSC XTAL DUAL FREQ 6-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 6-CLCC
Mounting Type: Surface Mount
Frequency: 156.25MHz, 312.5MHz
Type: Oscillator, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Supplier Device Package: 6-CLCC (7x5)
Current - Supply: 78 mA
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| BC858ALT1 |
![]() |
Виробник: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.20 грн |
| PCFFS40120AF |
![]() |
Виробник: onsemi
Description: DIODE SIL CARB 1.2KV WAFER DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
Current - Average Rectified (Io): 61A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV WAFER DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
Current - Average Rectified (Io): 61A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 629 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 629+ | 756.07 грн |
| SMBT1505T3G |
Виробник: onsemi
Description: DIODE STD REC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Description: DIODE STD REC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
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од. на суму грн.
| SMBT1505T3G |
Виробник: onsemi
Description: DIODE STD REC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Description: DIODE STD REC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
товару немає в наявності
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од. на суму грн.
| SMBT2001T1G |
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.69 грн |
| 6000+ | 3.40 грн |
| 9000+ | 3.37 грн |
| 15000+ | 2.97 грн |
| 21000+ | 2.72 грн |
| SMBT2001T1G |
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.03 грн |
| 31+ | 10.91 грн |
| 100+ | 6.77 грн |
| 500+ | 5.53 грн |
| 1000+ | 5.18 грн |
| MBR30H100CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
на замовлення 3280 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 176+ | 125.04 грн |
| MBR30H100CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
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| ASX340AT2C00XPED0-TRBR |
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 622.94 грн |
| ASX340AT3C00XPED0-DRBR |
![]() |
Виробник: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 969.12 грн |
| 5+ | 825.80 грн |
| 10+ | 787.50 грн |
| 25+ | 697.19 грн |
| 40+ | 677.95 грн |
| 80+ | 652.10 грн |
| 440+ | 589.51 грн |
| ASX340AT3C00XPED0-TPBR |
![]() |
Виробник: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: VGA 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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В кошику
од. на суму грн.
| ASX340AT3C00XPED0-TPBR |
![]() |
Виробник: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: VGA 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1024.47 грн |
| 5+ | 874.02 грн |
| 10+ | 833.84 грн |
| 25+ | 738.53 грн |
| 50+ | 709.27 грн |
| 100+ | 683.03 грн |
| 500+ | 621.75 грн |
| 1000+ | 603.78 грн |
| ASX340AT2C00XPED0-TPBR |
![]() |
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tape & Reel (TR)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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од. на суму грн.
| ASX340AT2C00XPED0-TPBR |
![]() |
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Cut Tape (CT)
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.66V ~ 2.94V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
на замовлення 541 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1024.47 грн |
| 5+ | 874.02 грн |
| 10+ | 833.84 грн |
| 25+ | 738.53 грн |
| 50+ | 709.27 грн |
| 100+ | 683.03 грн |
| 500+ | 621.75 грн |
| ASX344ATSC00XUEA0-DRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
на замовлення 1808 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1308.06 грн |
| 5+ | 1120.20 грн |
| 10+ | 1070.34 грн |
| 25+ | 949.83 грн |
| 40+ | 924.72 грн |
| 80+ | 890.97 грн |
| 440+ | 808.56 грн |
| ASX344ATSC00XUEA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1363.41 грн |
| 5+ | 1167.43 грн |
| 10+ | 1115.53 грн |
| 25+ | 990.28 грн |
| 40+ | 964.28 грн |
| 80+ | 929.29 грн |
| 440+ | 843.78 грн |
| ASX340AT3C00XPED0-DPBR2 |
![]() |
Виробник: onsemi
Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: VGA 1/4 CIS SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 965.71 грн |
| 5+ | 845.81 грн |
| 10+ | 814.48 грн |
| 25+ | 729.20 грн |
| 50+ | 715.54 грн |
| ASX344ATSC00XUEA0-DPBR2 |
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1606.12 грн |
| 5+ | 1411.32 грн |
| 10+ | 1360.89 грн |
| 25+ | 1220.61 грн |
| 50+ | 1181.94 грн |
| 100+ | 1146.46 грн |
| ASX340AT2C00XPED0-DPBR |
![]() |
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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од. на суму грн.
| ASX344ATSC00XUEA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Description: IMAGE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
товару немає в наявності
В кошику
од. на суму грн.
| ASX344ATSC00XUEA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
Description: IMAGE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60.0
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В кошику
од. на суму грн.
| FQD17N08LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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| FQD17N08LTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Description: MOSFET N-CH 80V 12.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.45A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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од. на суму грн.
| HCPL3700S |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
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| HCPL3700SDV |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
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| HCPL3700SV |
![]() |
Виробник: onsemi
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
Description: OPTOISOLTR 2.5KV 1CH DARL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 6µs, 25µs
Rise / Fall Time (Typ): 45µs, 0.5µs
Number of Channels: 1
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| MM74HC00MTC |
![]() |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 19710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1023+ | 21.33 грн |
| MM74HC00MTC |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| NLJ74HC00ADTR2G |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 19ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 35364 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 956+ | 22.80 грн |
| NLVVHC1GT04DFT2 |
Виробник: onsemi
Description: IC BUFFER/LEVEL SHIFTER SC-88A
Packaging: Bulk
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC BUFFER/LEVEL SHIFTER SC-88A
Packaging: Bulk
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2219+ | 10.97 грн |
| NLHV18T3244MNTWG |
на замовлення 23196 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 303.00 грн |
| 74HC574DTR2G |
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Виробник: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 28 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 28 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
на замовлення 98114 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 20.59 грн |
| FAN501MPX |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10MLP
Packaging: Tape & Reel (TR)
Package / Case: 10-WQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Duty Cycle: 68.5%
Frequency - Switching: 85kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.8V ~ 30V
Supplier Device Package: 10-MLP (4x3)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 17.5 V
Description: IC OFFLINE SWITCH FLYBACK 10MLP
Packaging: Tape & Reel (TR)
Package / Case: 10-WQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Duty Cycle: 68.5%
Frequency - Switching: 85kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.8V ~ 30V
Supplier Device Package: 10-MLP (4x3)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 17.5 V
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| FAN501MPX |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10MLP
Packaging: Cut Tape (CT)
Package / Case: 10-WQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Duty Cycle: 68.5%
Frequency - Switching: 85kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.8V ~ 30V
Supplier Device Package: 10-MLP (4x3)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 17.5 V
Description: IC OFFLINE SWITCH FLYBACK 10MLP
Packaging: Cut Tape (CT)
Package / Case: 10-WQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Duty Cycle: 68.5%
Frequency - Switching: 85kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.8V ~ 30V
Supplier Device Package: 10-MLP (4x3)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 17.5 V
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| USB1T1103MPX |
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на замовлення 24341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 833+ | 28.70 грн |
| FAN21SV04EMPX |
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Виробник: onsemi
Description: IC REG
Packaging: Bulk
Package / Case: 25-WQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: 25-MLP (6x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 19.2V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG
Packaging: Bulk
Package / Case: 25-WQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: 25-MLP (6x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 19.2V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 95+ | 247.52 грн |
| FAN21SV06MPX |
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Виробник: onsemi
Description: IC REG BUCK ADJ 6A 25MLP
Packaging: Tape & Reel (TR)
Package / Case: 25-WQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -10°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: 25-MLP (6x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 19.2V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 6A 25MLP
Packaging: Tape & Reel (TR)
Package / Case: 25-WQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -10°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: 25-MLP (6x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 19.2V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.8V
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| NCR169DRLRAG |
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Виробник: onsemi
Description: SCR 400V 800MA TO-92 (TO-226)
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92 (TO-226)
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: SCR 400V 800MA TO-92 (TO-226)
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92 (TO-226)
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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| NCR169DG |
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Виробник: onsemi
Description: SCR 400V 800MA TO-92 (TO-226)
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92 (TO-226)
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: SCR 400V 800MA TO-92 (TO-226)
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92 (TO-226)
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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| DTA143TM3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
на замовлення 1011000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7839+ | 3.11 грн |
| NUD4001DR2 |
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Виробник: onsemi
Description: IC LED DRIVER LINEAR 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
Grade: Automotive
Description: IC LED DRIVER LINEAR 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 1
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 30V
Grade: Automotive
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| NVTYS003N04CTWG |
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Виробник: onsemi
Description: T6 40V N-CH SL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V N-CH SL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.00 грн |
| 10+ | 81.27 грн |
| 100+ | 54.57 грн |
| 500+ | 40.49 грн |
| 1000+ | 37.06 грн |
| NVTYS003N04CLTWG |
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Виробник: onsemi
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V
Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 40A, 10V
Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.85 грн |
| 10+ | 81.60 грн |
| 100+ | 54.81 грн |
| 500+ | 40.67 грн |
| 1000+ | 37.26 грн |
| NXH50C120L2C2ES1G |
Виробник: onsemi
Description: IGBT MOD 1200V 50A 26DIP
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V
Description: IGBT MOD 1200V 50A 26DIP
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 6876.23 грн |
























