| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NRVHP820MFDT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVHP820MFDT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 1382 шт: термін постачання 21-31 дні (днів) |
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NOIX2SN016KB-LTI | onsemi |
Description: XGS16MP 12PORT MONOCRAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4000H x 4000V Supplier Device Package: 163-ILGA (21.5x19.5) Frames per Second: 42.0 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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NOIX1SN016KB-LTI | onsemi |
Description: XGS16MP 24PORT MONOCRAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4000H x 4000V Supplier Device Package: 163-ILGA (21.5x19.5) Frames per Second: 65.0 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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NOIX3SN012KB-LTI | onsemi |
Description: IC IMAGE SENS 12MP MONO 163CLGAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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NOIX3SN012KB-LTI1 | onsemi |
Description: IC IMAGE SENS 12MP MONO 163CLGAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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NOIX1SN012KB-LTI | onsemi |
Description: CMOS IMAGE SENSOR 163LGAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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NOIX1SN012KB-LTI1 | onsemi |
Description: XGS12MP, 24PORT, MONO 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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| NOIX3SN016KB-LTI1 | onsemi |
Description: XGS16MP, 6PORT, MONO,CRA_0D Packaging: Tray |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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NOIP1SN016KA-GTI | onsemi |
Description: IC IMAGE SENS 16MP CMOS 355CPGAPackaging: Tray Package / Case: 355-BSPGA, Window Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 3.2V ~ 3.4V Pixel Size: 4.5µm x 4.5µm Active Pixel Array: 4096H x 4096V Supplier Device Package: 355-µPGA Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NOIX3SN016KB-LTI | onsemi |
Description: XGS16MP 6PORT MONOCRA_Packaging: Tray Package / Case: 163-BCLGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4000H x 4000V Supplier Device Package: 163-ILGA (21.5x19.5) Frames per Second: 21.0 |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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N01L63W2AT25I | onsemi |
Description: IC SRAM 1MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
на замовлення 943 шт: термін постачання 21-31 дні (днів) |
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N01L63W3AT25I | onsemi |
Description: IC SRAM 1MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
на замовлення 528810 шт: термін постачання 21-31 дні (днів) |
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N01L83W2AT25IT | onsemi |
Description: IC SRAM 1MBIT PARALLEL 32TSOP IPackaging: Bulk Package / Case: 32-LFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 44000 шт: термін постачання 21-31 дні (днів) |
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| NOIP1SN010KA-GDI | onsemi |
Description: IC IMAGE SENS 10MP CMOS 355CPGAPackaging: Tray |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MM3Z6V2ST1G | onsemi |
Description: DIODE ZENER 6.2V 300MW SOD323Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTMFS0D4N04XMT1G | onsemi |
Description: 40V T10M IN S08FL HEFET GEN 2 PAPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 509A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTMFS0D4N04XMT1G | onsemi |
Description: 40V T10M IN S08FL HEFET GEN 2 PAPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 509A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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NOIX2SE016KB-LTI | onsemi |
Description: XGS16MP 12PORT COLORCRPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4000H x 4000V Supplier Device Package: 163-ILGA (21.5x19.5) Frames per Second: 42.0 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| NOIX1SE016KB-LTI | onsemi |
Description: XGS16M 24PORT COLOR_CRAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4000H x 4000V Supplier Device Package: 163-ILGA (21.5x19.5) Frames per Second: 65 |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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NVBG095N65S3F | onsemi |
Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7LPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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NVBG095N65S3F | onsemi |
Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7LPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 2256 шт: термін постачання 21-31 дні (днів) |
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SBAW56LT1G | onsemi |
Description: DIODE ARRAY GP 70V 200MA SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Qualification: AEC-Q101 |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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BAW56LT3 | onsemi |
Description: DIODE ARRAY GP 70V 200MA SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 1490000 шт: термін постачання 21-31 дні (днів) |
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| CAT5113ZI-50-MP | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NXH200T120H3Q2F2SG | onsemi |
Description: IGBT MOD 1200V 330A 679W 56-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: 56-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 330 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 679 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
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NXH300B100H4Q2F2S1G | onsemi |
Description: IGBT MOD 1118V 73A 194W 53-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: 53-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 73 A Voltage - Collector Emitter Breakdown (Max): 1118 V Power - Max: 194 W Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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NXH300B100H4Q2F2SG | onsemi |
Description: IGBT MOD 1118V 73A 194W 53-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: 53-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 73 A Voltage - Collector Emitter Breakdown (Max): 1118 V Power - Max: 194 W Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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NXH200T120H3Q2F2STG | onsemi |
Description: IGBT MOD 1200V 330A 679W 56-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: 56-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 330 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 679 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NXH200T120H3Q2F2STNG | onsemi |
Description: IGBT MOD 650V 330A 679W 56-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: 56-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 330 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 679 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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NXH450B100H4Q2F2SG | onsemi |
Description: IGBT MOD 1000V 101A 234W 56-PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: 56-PIM (93x47) Current - Collector (Ic) (Max): 101 A Voltage - Collector Emitter Breakdown (Max): 1000 V Power - Max: 234 W Current - Collector Cutoff (Max): 600 µA Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V |
на замовлення 576 шт: термін постачання 21-31 дні (днів) |
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| NXH350N100H4Q2F2P1G-R | onsemi |
Description: GEN1.5 1500V MASS MARKETPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A NTC Thermistor: Yes Supplier Device Package: 42-PIM/Q2PACK (93x47) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 303 A Voltage - Collector Emitter Breakdown (Max): 1000 V Power - Max: 592 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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LM2931ACTV | onsemi |
Description: IC REG LIN POS ADJ 100MA TO220-5Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220-5 Voltage - Output (Max): 29.5V Voltage - Output (Min/Fixed): 2.7V Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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LM2931ACTVG | onsemi |
Description: IC REG LIN POS ADJ 100MA TO220-5Packaging: Bulk Package / Case: TO-220-5 Formed Leads Output Type: Adjustable Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220-5 Voltage - Output (Max): 29.5V Voltage - Output (Min/Fixed): 2.7V Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
на замовлення 14013 шт: термін постачання 21-31 дні (днів) |
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LM2931CD2TG | onsemi |
Description: IC REG LIN POS ADJ 100MA D2PAK-5Packaging: Bulk Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Max): 29.5V Voltage - Output (Min/Fixed): 2.7V Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
на замовлення 14690 шт: термін постачання 21-31 дні (днів) |
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LM2931CD2TR4 | onsemi |
Description: IC REG LIN POS ADJ 100MA D2PAK-5Packaging: Bulk Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Max): 29.5V Voltage - Output (Min/Fixed): 2.7V Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
на замовлення 640 шт: термін постачання 21-31 дні (днів) |
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MM74HC541MTC | onsemi |
Description: IC BUFFER NON-INVERT 6V 20-TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-TSSOP |
на замовлення 18150 шт: термін постачання 21-31 дні (днів) |
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2N5400G | onsemi |
Description: TRANS PNP 120V 0.6A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 625 mW |
на замовлення 9086 шт: термін постачання 21-31 дні (днів) |
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D45H11 | onsemi |
Description: TRANS PNP 80V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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D45H11 | onsemi |
Description: TRANS PNP 80V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS6898AZ-F085 | onsemi |
Description: MOSFET 2N-CH 20V 9.4A 8SOICPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SD1207T-AE | onsemi |
Description: TRANS NPN 50V 2A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 5874 шт: термін постачання 21-31 дні (днів) |
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2SD1207S-AE | onsemi |
Description: TRANS NPN 50V 2A 3-MPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 105079 шт: термін постачання 21-31 дні (днів) |
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KSH2955TM | onsemi |
Description: TRANS PNP 60V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSH2955TM | onsemi |
Description: TRANS PNP 60V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1237AD65R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1237AD65R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1237AD65R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V |
на замовлення 233324 шт: термін постачання 21-31 дні (днів) |
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FCPF600N65S3R0L | onsemi |
Description: MOSFET N-CH 650V 6A TO220F-3Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 600µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V |
на замовлення 178260 шт: термін постачання 21-31 дні (днів) |
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4N25SM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 12470 шт: термін постачання 21-31 дні (днів) |
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4N25TVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIPPackaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NSBA143EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSBA143EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSBA143EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 |
на замовлення 45500 шт: термін постачання 21-31 дні (днів) |
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NSBA144WDXV6T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSBA144WDXV6T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSVBA143ZDXV6T1G | onsemi |
Description: TRANS 2PNP BIPO 60V SOT564Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
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NSVBA143ZDXV6T1G | onsemi |
Description: TRANS 2PNP BIPO 60V SOT564Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
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BAV74 | onsemi |
Description: DIODE ARRAY GP 50V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV74 | onsemi |
Description: DIODE ARRAY GP 50V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 5646 шт: термін постачання 21-31 дні (днів) |
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| NRVHP820MFDT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NRVHP820MFDT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.12 грн |
| 10+ | 81.86 грн |
| 100+ | 53.79 грн |
| 500+ | 48.33 грн |
| NOIX2SN016KB-LTI |
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Виробник: onsemi
Description: XGS16MP 12PORT MONOCRA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 42.0
Description: XGS16MP 12PORT MONOCRA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 42.0
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 41216.81 грн |
| NOIX1SN016KB-LTI |
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Виробник: onsemi
Description: XGS16MP 24PORT MONOCRA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 65.0
Description: XGS16MP 24PORT MONOCRA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 65.0
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 51520.60 грн |
| NOIX3SN012KB-LTI |
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Виробник: onsemi
Description: IC IMAGE SENS 12MP MONO 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: IC IMAGE SENS 12MP MONO 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 32277.54 грн |
| 5+ | 29271.27 грн |
| 10+ | 28595.40 грн |
| 25+ | 26076.43 грн |
| NOIX3SN012KB-LTI1 |
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Виробник: onsemi
Description: IC IMAGE SENS 12MP MONO 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: IC IMAGE SENS 12MP MONO 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 32277.54 грн |
| NOIX1SN012KB-LTI |
![]() |
Виробник: onsemi
Description: CMOS IMAGE SENSOR 163LGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: CMOS IMAGE SENSOR 163LGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 34347.61 грн |
| NOIX1SN012KB-LTI1 |
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Виробник: onsemi
Description: XGS12MP, 24PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS12MP, 24PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 38280.33 грн |
| 8+ | 34230.23 грн |
| 12+ | 33791.19 грн |
| NOIX3SN016KB-LTI1 |
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 41376.04 грн |
| 8+ | 37031.61 грн |
| 12+ | 36562.35 грн |
| NOIP1SN016KA-GTI |
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Виробник: onsemi
Description: IC IMAGE SENS 16MP CMOS 355CPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 3.2V ~ 3.4V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 355-µPGA
Frames per Second: 120.0
Description: IC IMAGE SENS 16MP CMOS 355CPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 3.2V ~ 3.4V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 355-µPGA
Frames per Second: 120.0
товару немає в наявності
В кошику
од. на суму грн.
| NOIX3SN016KB-LTI |
![]() |
Виробник: onsemi
Description: XGS16MP 6PORT MONOCRA_
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 21.0
Description: XGS16MP 6PORT MONOCRA_
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 21.0
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 37321.65 грн |
| N01L63W2AT25I |
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Виробник: onsemi
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 943 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 169+ | 138.58 грн |
| N01L63W3AT25I |
![]() |
Виробник: onsemi
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 528810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 169+ | 138.58 грн |
| N01L83W2AT25IT |
![]() |
Виробник: onsemi
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bulk
Package / Case: 32-LFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bulk
Package / Case: 32-LFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 188+ | 124.57 грн |
| NOIP1SN010KA-GDI |
![]() |
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 83571.13 грн |
| MM3Z6V2ST1G |
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Виробник: onsemi
Description: DIODE ZENER 6.2V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS0D4N04XMT1G |
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Виробник: onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 509A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 509A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS0D4N04XMT1G |
![]() |
Виробник: onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 509A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 509A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8577 pF @ 20 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.90 грн |
| 10+ | 151.53 грн |
| NOIX2SE016KB-LTI |
![]() |
Виробник: onsemi
Description: XGS16MP 12PORT COLORCR
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 42.0
Description: XGS16MP 12PORT COLORCR
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 42.0
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 51423.42 грн |
| 5+ | 41978.69 грн |
| 10+ | 39623.73 грн |
| NOIX1SE016KB-LTI |
![]() |
Виробник: onsemi
Description: XGS16M 24PORT COLOR_CRA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 65
Description: XGS16M 24PORT COLOR_CRA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4000H x 4000V
Supplier Device Package: 163-ILGA (21.5x19.5)
Frames per Second: 65
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 54240.68 грн |
| 10+ | 50071.58 грн |
| NVBG095N65S3F |
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Виробник: onsemi
Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Qualification: AEC-Q101
Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 283.13 грн |
| 1600+ | 245.38 грн |
| NVBG095N65S3F |
![]() |
Виробник: onsemi
Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Qualification: AEC-Q101
Description: SF3 FRFET AUTO, 95MOHM, D2PAK 7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Qualification: AEC-Q101
на замовлення 2256 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 449.13 грн |
| 10+ | 370.84 грн |
| 100+ | 309.00 грн |
| SBAW56LT1G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Qualification: AEC-Q101
на замовлення 900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 900+ | 23.10 грн |
| BAW56LT3 |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 1490000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11823+ | 2.09 грн |
| NXH200T120H3Q2F2SG |
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Виробник: onsemi
Description: IGBT MOD 1200V 330A 679W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 56-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 679 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
Description: IGBT MOD 1200V 330A 679W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 56-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 679 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
на замовлення 177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9376.14 грн |
| 12+ | 7886.11 грн |
| NXH300B100H4Q2F2S1G |
![]() |
Виробник: onsemi
Description: IGBT MOD 1118V 73A 194W 53-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1118 V
Power - Max: 194 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
Description: IGBT MOD 1118V 73A 194W 53-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1118 V
Power - Max: 194 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9469.23 грн |
| 36+ | 7979.36 грн |
| NXH300B100H4Q2F2SG |
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Виробник: onsemi
Description: IGBT MOD 1118V 73A 194W 53-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1118 V
Power - Max: 194 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
Description: IGBT MOD 1118V 73A 194W 53-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 1118 V
Power - Max: 194 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8522.80 грн |
| NXH200T120H3Q2F2STG |
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Виробник: onsemi
Description: IGBT MOD 1200V 330A 679W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 56-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 679 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
Description: IGBT MOD 1200V 330A 679W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 56-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 679 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NXH200T120H3Q2F2STNG |
![]() |
Виробник: onsemi
Description: IGBT MOD 650V 330A 679W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 56-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 679 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
Description: IGBT MOD 650V 330A 679W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 56-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 679 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9376.14 грн |
| 36+ | 7886.11 грн |
| NXH450B100H4Q2F2SG |
![]() |
Виробник: onsemi
Description: IGBT MOD 1000V 101A 234W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
Description: IGBT MOD 1000V 101A 234W 56-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
на замовлення 576 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10249.90 грн |
| 12+ | 8761.06 грн |
| NXH350N100H4Q2F2P1G-R |
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Виробник: onsemi
Description: GEN1.5 1500V MASS MARKET
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 592 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
Description: GEN1.5 1500V MASS MARKET
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: 42-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 303 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 592 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 19104.24 грн |
| 12+ | 17887.51 грн |
| LM2931ACTV |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 649+ | 32.20 грн |
| LM2931ACTVG |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LIN POS ADJ 100MA TO220-5
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
на замовлення 14013 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 346+ | 60.90 грн |
| LM2931CD2TG |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 100MA D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LIN POS ADJ 100MA D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
на замовлення 14690 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 540+ | 39.20 грн |
| LM2931CD2TR4 |
![]() |
Виробник: onsemi
Description: IC REG LIN POS ADJ 100MA D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LIN POS ADJ 100MA D2PAK-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
на замовлення 640 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 640+ | 44.51 грн |
| MM74HC541MTC |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
Description: IC BUFFER NON-INVERT 6V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
на замовлення 18150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.26 грн |
| 10+ | 59.92 грн |
| 75+ | 40.88 грн |
| 150+ | 34.05 грн |
| 300+ | 30.44 грн |
| 525+ | 27.96 грн |
| 1050+ | 24.92 грн |
| 2550+ | 22.22 грн |
| 5025+ | 20.53 грн |
| 2N5400G |
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Виробник: onsemi
Description: TRANS PNP 120V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 625 mW
Description: TRANS PNP 120V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 625 mW
на замовлення 9086 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.90 грн |
| D45H11 |
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Виробник: onsemi
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| D45H11 |
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Виробник: onsemi
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1207T-AE |
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Виробник: onsemi
Description: TRANS NPN 50V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 5874 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 19.60 грн |
| 2SD1207S-AE |
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Виробник: onsemi
Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 105079 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 19.60 грн |
| KSH2955TM |
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Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
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| KSH2955TM |
![]() |
Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS PNP 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
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| NCP1237AD65R2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
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| NCP1237AD65R2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
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| NCP1237AD65R2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
на замовлення 233324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 325+ | 69.30 грн |
| FCPF600N65S3R0L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 6A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
Description: MOSFET N-CH 650V 6A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
на замовлення 178260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 463+ | 50.81 грн |
| 4N25SM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 12470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.00 грн |
| 50+ | 26.08 грн |
| 100+ | 23.85 грн |
| 500+ | 18.63 грн |
| 1000+ | 17.39 грн |
| 2000+ | 16.35 грн |
| 5000+ | 14.95 грн |
| 10000+ | 14.25 грн |
| 4N25TVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 10+ | 33.66 грн |
| 100+ | 24.51 грн |
| 500+ | 19.16 грн |
| 1000+ | 17.90 грн |
| NSBA143EDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
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В кошику
од. на суму грн.
| NSBA143EDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| NSBA143EDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
на замовлення 45500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3659+ | 5.60 грн |
| NSBA144WDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
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В кошику
од. на суму грн.
| NSBA144WDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| NSVBA143ZDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 6.21 грн |
| 8000+ | 5.72 грн |
| 12000+ | 4.95 грн |
| 28000+ | 4.56 грн |
| NSVBA143ZDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.30 грн |
| 14+ | 23.28 грн |
| 100+ | 11.75 грн |
| 500+ | 9.00 грн |
| 1000+ | 6.67 грн |
| 2000+ | 5.62 грн |
| BAV74 |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| BAV74 |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 5646 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 18.78 грн |
| 29+ | 11.17 грн |
| 100+ | 6.97 грн |
| 500+ | 4.82 грн |
| 1000+ | 4.26 грн |































