| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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1N5339B | onsemi |
Description: DIODE ZENER 5.6V 5W AXIALPackaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC14042BDR2G | onsemi |
Description: IC D-TYPE TRANSP 1:1 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOIC |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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MC14042BDR2G | onsemi |
Description: IC D-TYPE TRANSP 1:1 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOIC |
на замовлення 9894 шт: термін постачання 21-31 дні (днів) |
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MC14532BDR2G | onsemi |
Description: IC PRIORITY ENCODER 1X8:3 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:3 Type: Priority Encoder Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Dual Supply Supplier Device Package: 16-SOIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC14532BDR2G | onsemi |
Description: IC PRIORITY ENCODER 1X8:3 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:3 Type: Priority Encoder Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Dual Supply Supplier Device Package: 16-SOIC |
на замовлення 2150 шт: термін постачання 21-31 дні (днів) |
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MC14022BDR2G | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Positive Edge Supplier Device Package: 16-SOIC Voltage - Supply: 3 V ~ 18 V Count Rate: 16 MHz Number of Bits per Element: 4 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MC14022BDR2G | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Positive Edge Supplier Device Package: 16-SOIC Voltage - Supply: 3 V ~ 18 V Count Rate: 16 MHz Number of Bits per Element: 4 |
на замовлення 4386 шт: термін постачання 21-31 дні (днів) |
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MC14517BDWR2G | onsemi |
Description: IC SR TRI-STATE 64BIT 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 2 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 16-SOIC Number of Bits per Element: 64 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MC14517BDWR2G | onsemi |
Description: IC SR TRI-STATE 64BIT 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 2 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 16-SOIC Number of Bits per Element: 64 |
на замовлення 4537 шт: термін постачання 21-31 дні (днів) |
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GBPC2510W | onsemi |
Description: BRIDGE RECT 1P 1KV 25A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5333DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMUN5333DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5330DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5330DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSVMUN5332DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMUN5332DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SB360 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 180pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSBC114EMXWTBG | onsemi |
Description: BIAS RESISTOR TRANSISTORS (BRT)Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114EMXWTBG | onsemi |
Description: BIAS RESISTOR TRANSISTORS (BRT)Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114EPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114EPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 103540 шт: термін постачання 21-31 дні (днів) |
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NSVBC114TDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114TDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NSVBC114YPDXV65G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TDXV6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NSBC114YDXV6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 39761 шт: термін постачання 21-31 дні (днів) |
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NSBC114YPDXV6T5G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 29000 шт: термін постачання 21-31 дні (днів) |
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NSBC114YPDXV6T1 | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSBC114TPDXV6T1 | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSBC114TF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
на замовлення 472000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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NSBC114TPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 |
на замовлення 202500 шт: термін постачання 21-31 дні (днів) |
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NSBC114EPDXV6T1 | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MBRF20200CT | onsemi |
Description: DIODE ARR SCHOT 200V 10A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
на замовлення 9545 шт: термін постачання 21-31 дні (днів) |
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MBRF20200CT | onsemi |
Description: DIODE ARR SCHOT 200V 10A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BD237 | onsemi |
Description: TRANS NPN 80V 2A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM833D | onsemi |
Description: IC AUDIO 2 CIRCUIT 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Audio Operating Temperature: -40°C ~ 85°C Current - Supply: 2.05mA (x2 Channels) Slew Rate: 7V/µs Gain Bandwidth Product: 16 MHz Current - Input Bias: 300 nA Voltage - Input Offset: 150 µV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 37 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 36 V |
на замовлення 6107 шт: термін постачання 21-31 дні (днів) |
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LB1830M-TLM-E | onsemi |
Description: IC MOTOR DRIVER 3V-9V 10MFPSPackaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: Parallel Operating Temperature: -20°C ~ 80°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 3V ~ 9V Applications: General Purpose Technology: Bipolar Voltage - Load: 3V ~ 9V Supplier Device Package: 10-MFPS Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC273MTC | onsemi |
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 78 MHz Input Capacitance: 7 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF Number of Bits per Element: 8 |
на замовлення 11879 шт: термін постачання 21-31 дні (днів) |
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MC74HC273ADWR2G-Q | onsemi |
Description: LOG CMOS D FLIP FLOP OCTLPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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MC74HC273ADWR2G-Q | onsemi |
Description: LOG CMOS D FLIP FLOP OCTLPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF Grade: Automotive Number of Bits per Element: 8 Qualification: AEC-Q100 |
на замовлення 90840 шт: термін постачання 21-31 дні (днів) |
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NCD57081ADR2G | onsemi |
Description: ISOLATED DRIVER IN A COMPACT 8-PPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 3750Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 13ns, 13ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 25ns Number of Channels: 1 Voltage - Output Supply: 0V ~ 32V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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NCD57081ADR2G | onsemi |
Description: ISOLATED DRIVER IN A COMPACT 8-PPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Output: 6.5A Technology: Capacitive Coupling Current - Output High, Low: 6.5A, 6.5A Voltage - Isolation: 3750Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 13ns, 13ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 25ns Number of Channels: 1 Voltage - Output Supply: 0V ~ 32V |
на замовлення 14134 шт: термін постачання 21-31 дні (днів) |
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MBR10100 | onsemi |
Description: DIODE SCHOTTKY 100V 10A TO2202Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFWS4D0N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS4D0N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 67456 шт: термін постачання 21-31 дні (днів) |
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NVMFS4841NT1G | onsemi |
Description: MOSFET N-CH 30V 16A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES1J | onsemi |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 2527500 шт: термін постачання 21-31 дні (днів) |
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ES1J | onsemi |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 2532447 шт: термін постачання 21-31 дні (днів) |
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PN2907BU | onsemi |
Description: TRANS PNP 40V 0.8A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LC75836WS-T-E | onsemi |
Description: IC DRVR 140 SEGMENT 48SQFP Packaging: Tray Package / Case: 48-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 140 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 6V Supplier Device Package: 48-SQFP (7x7) Current - Supply: 450 µA |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||||||
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NL17SZ17DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC-74APackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-74A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NL17SZ17DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC-74APackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-74A |
на замовлення 1436 шт: термін постачання 21-31 дні (днів) |
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AF0130CSSM30SMD20 | onsemi |
Description: 1 MP 1/3 CISPackaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: Die Frames per Second: 60.0 |
на замовлення 1840 шт: термін постачання 21-31 дні (днів) |
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AF0131CSSM30SMKA1-CR2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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AF0131CSSM30SMKA1-CP2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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AF0130CSSM30SMKA1-CR2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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AF0130CSSM30SMKA1-CP2 | onsemi |
Description: 1MP 1/3 CIS SOPackaging: Tray Package / Case: 87-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.2V ~ 2.8V Pixel Size: 3.5µm x 3.5µm Active Pixel Array: 1280H x 960V Supplier Device Package: 87-ODCSP (6.05x4.83) Frames per Second: 110.0 |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
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MMBZ5239BLT3 | onsemi |
Description: DIODE ZENER 9.1V 225MW SOT23-3Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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| 1N5339B |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MC14042BDR2G |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 15.51 грн |
| 5000+ | 14.52 грн |
| 7500+ | 14.31 грн |
| MC14042BDR2G |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
на замовлення 9894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.56 грн |
| 13+ | 23.60 грн |
| 25+ | 21.12 грн |
| 100+ | 17.25 грн |
| 250+ | 16.02 грн |
| 500+ | 15.27 грн |
| 1000+ | 14.58 грн |
| MC14532BDR2G |
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Виробник: onsemi
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC14532BDR2G |
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Виробник: onsemi
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
на замовлення 2150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.92 грн |
| 12+ | 25.57 грн |
| 25+ | 22.88 грн |
| 100+ | 18.68 грн |
| 250+ | 17.36 грн |
| 500+ | 16.57 грн |
| 1000+ | 15.87 грн |
| MC14022BDR2G |
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Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 18.44 грн |
| MC14022BDR2G |
![]() |
Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
на замовлення 4386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.85 грн |
| 11+ | 27.76 грн |
| 25+ | 24.93 грн |
| 100+ | 20.40 грн |
| 250+ | 18.97 грн |
| 500+ | 18.12 грн |
| 1000+ | 17.43 грн |
| MC14517BDWR2G |
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Виробник: onsemi
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 46.40 грн |
| 2000+ | 43.40 грн |
| 3000+ | 42.76 грн |
| MC14517BDWR2G |
![]() |
Виробник: onsemi
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
на замовлення 4537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.12 грн |
| 10+ | 63.85 грн |
| 25+ | 57.85 грн |
| 100+ | 48.11 грн |
| 250+ | 45.17 грн |
| 500+ | 44.08 грн |
| GBPC2510W |
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Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 528.68 грн |
| 10+ | 345.70 грн |
| 100+ | 253.28 грн |
| NSVMUN5333DW1T3G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NSVMUN5333DW1T3G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMUN5330DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMUN5330DW1T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NSVMUN5332DW1T3G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NSVMUN5332DW1T3G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SB360 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| NSBC114EMXWTBG |
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Виробник: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 32+ | 9.61 грн |
| 36+ | 8.53 грн |
| 100+ | 6.84 грн |
| 250+ | 6.29 грн |
| 500+ | 5.95 грн |
| 1000+ | 5.58 грн |
| 2500+ | 5.29 грн |
| 5000+ | 5.12 грн |
| NSVBC114EMXWTBG |
![]() |
Виробник: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.14 грн |
| 15+ | 21.26 грн |
| 100+ | 13.52 грн |
| 500+ | 9.54 грн |
| 1000+ | 8.52 грн |
| 2000+ | 7.67 грн |
| 5000+ | 6.63 грн |
| 10000+ | 6.06 грн |
| 50000+ | 5.07 грн |
| NSVBC114EPDXV6T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 5.39 грн |
| 8000+ | 4.71 грн |
| 12000+ | 4.46 грн |
| 20000+ | 3.93 грн |
| 28000+ | 3.77 грн |
| 40000+ | 3.62 грн |
| 100000+ | 3.24 грн |
| NSVBC114EPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 103540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.71 грн |
| 20+ | 15.51 грн |
| 100+ | 9.75 грн |
| 500+ | 6.81 грн |
| 1000+ | 6.05 грн |
| 2000+ | 5.41 грн |
| NSVBC114TDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 7.57 грн |
| NSVBC114TDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.35 грн |
| 15+ | 20.95 грн |
| 100+ | 13.32 грн |
| 500+ | 9.40 грн |
| 1000+ | 8.40 грн |
| 2000+ | 7.55 грн |
| NSVBC114YPDXV65G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4537+ | 4.66 грн |
| NSBC114TDXV6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3692+ | 5.33 грн |
| NSBC114YDXV6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 39761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3692+ | 5.33 грн |
| NSBC114YPDXV6T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 29000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3692+ | 5.33 грн |
| NSBC114YPDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NSBC114TPDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NSBC114TF3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
на замовлення 472000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2407+ | 7.99 грн |
| NSBC114TPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 4.92 грн |
| 8000+ | 4.29 грн |
| 12000+ | 4.06 грн |
| 20000+ | 3.57 грн |
| 28000+ | 3.43 грн |
| 40000+ | 3.29 грн |
| 100000+ | 2.94 грн |
| NSBC114TPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.35 грн |
| NSBC114TPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
на замовлення 202500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1872+ | 10.66 грн |
| NSBC114EPDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
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Мінімальне замовлення: 4000 шт
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| MBRF20200CT |
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Виробник: onsemi
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 9545 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 121+ | 166.25 грн |
| MBRF20200CT |
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Виробник: onsemi
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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| BD237 |
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Виробник: onsemi
Description: TRANS NPN 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANS NPN 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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| LM833D |
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Виробник: onsemi
Description: IC AUDIO 2 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Audio
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.05mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 37 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
Description: IC AUDIO 2 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Audio
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.05mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 37 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
на замовлення 6107 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 327+ | 61.42 грн |
| LB1830M-TLM-E |
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Виробник: onsemi
Description: IC MOTOR DRIVER 3V-9V 10MFPS
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 9V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 3V ~ 9V
Supplier Device Package: 10-MFPS
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 3V-9V 10MFPS
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 9V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 3V ~ 9V
Supplier Device Package: 10-MFPS
Motor Type - AC, DC: Brushed DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| MM74HC273MTC |
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Виробник: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
на замовлення 11879 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.06 грн |
| 10+ | 35.48 грн |
| 75+ | 28.65 грн |
| 150+ | 25.39 грн |
| 300+ | 24.17 грн |
| 525+ | 23.33 грн |
| 1050+ | 22.10 грн |
| 2550+ | 21.23 грн |
| 5025+ | 20.70 грн |
| MC74HC273ADWR2G-Q |
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Виробник: onsemi
Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 20.98 грн |
| 2000+ | 19.53 грн |
| 3000+ | 19.20 грн |
| 5000+ | 17.67 грн |
| 7000+ | 17.47 грн |
| 10000+ | 17.28 грн |
| MC74HC273ADWR2G-Q |
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Виробник: onsemi
Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
на замовлення 90840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.99 грн |
| 11+ | 30.11 грн |
| 25+ | 27.02 грн |
| 100+ | 22.16 грн |
| 250+ | 20.64 грн |
| 500+ | 19.72 грн |
| NCD57081ADR2G |
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Виробник: onsemi
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 115.43 грн |
| 5000+ | 109.00 грн |
| NCD57081ADR2G |
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Виробник: onsemi
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
на замовлення 14134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 216.81 грн |
| 10+ | 156.29 грн |
| 25+ | 143.34 грн |
| 100+ | 121.08 грн |
| 250+ | 114.69 грн |
| 500+ | 110.84 грн |
| 1000+ | 105.90 грн |
| MBR10100 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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| NVMFWS4D0N04XMT1G |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 28.53 грн |
| 3000+ | 26.70 грн |
| 4500+ | 26.31 грн |
| 7500+ | 24.29 грн |
| 10500+ | 24.05 грн |
| 15000+ | 23.82 грн |
| NVMFWS4D0N04XMT1G |
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Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
на замовлення 67456 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.92 грн |
| 10+ | 41.00 грн |
| 25+ | 36.95 грн |
| 100+ | 30.48 грн |
| 250+ | 28.48 грн |
| 500+ | 27.27 грн |
| NVMFS4841NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V
Qualification: AEC-Q101
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од. на суму грн.
| ES1J |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2527500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7500+ | 6.16 грн |
| 15000+ | 5.44 грн |
| ES1J |
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Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2532447 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.56 грн |
| 15+ | 20.35 грн |
| 100+ | 12.88 грн |
| 500+ | 9.06 грн |
| 1000+ | 8.07 грн |
| 2000+ | 7.25 грн |
| PN2907BU |
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Виробник: onsemi
Description: TRANS PNP 40V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
| LC75836WS-T-E |
Виробник: onsemi
Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| NL17SZ17DBVT1G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NL17SZ17DBVT1G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
на замовлення 1436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 6.28 грн |
| 98+ | 3.10 грн |
| 114+ | 2.66 грн |
| 136+ | 2.09 грн |
| 250+ | 1.89 грн |
| 500+ | 1.77 грн |
| 1000+ | 1.65 грн |
| AF0130CSSM30SMD20 |
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Виробник: onsemi
Description: 1 MP 1/3 CIS
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Frames per Second: 60.0
Description: 1 MP 1/3 CIS
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Frames per Second: 60.0
на замовлення 1840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 4100.62 грн |
| 5+ | 3648.74 грн |
| 10+ | 3537.08 грн |
| 25+ | 3194.04 грн |
| 50+ | 3108.23 грн |
| 100+ | 3029.44 грн |
| AF0131CSSM30SMKA1-CR2 |
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Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 5330.81 грн |
| 5+ | 4756.50 грн |
| 10+ | 4616.26 грн |
| 25+ | 4174.63 грн |
| 50+ | 4066.78 грн |
| 100+ | 3967.81 грн |
| AF0131CSSM30SMKA1-CP2 |
![]() |
Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 5370.88 грн |
| 5+ | 4792.51 грн |
| 10+ | 4651.43 грн |
| 25+ | 4206.61 грн |
| 50+ | 4098.05 грн |
| 100+ | 3998.40 грн |
| AF0130CSSM30SMKA1-CR2 |
![]() |
Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 5381.09 грн |
| 5+ | 4802.04 грн |
| 10+ | 4660.58 грн |
| 25+ | 4214.93 грн |
| 50+ | 4106.21 грн |
| 100+ | 4006.39 грн |
| AF0130CSSM30SMKA1-CP2 |
![]() |
Виробник: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 5410.15 грн |
| 5+ | 4828.67 грн |
| 10+ | 4686.46 грн |
| 25+ | 4238.50 грн |
| 50+ | 4129.23 грн |
| 100+ | 4028.95 грн |
| MMBZ5239BLT3 |
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Виробник: onsemi
Description: DIODE ZENER 9.1V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Description: DIODE ZENER 9.1V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7869+ | 2.66 грн |


























