| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N4733A-T50R | onsemi |
Description: DIODE ZENER 5.1V 1W DO41Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV2931AST-5T3G | onsemi |
Description: IC REG LINEAR 5V 100MA SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: SOT-223 Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 90dB (120Hz) Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 44000 шт: термін постачання 21-31 дні (днів) |
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NCV2931AST-5T3G | onsemi |
Description: IC REG LINEAR 5V 100MA SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: SOT-223 Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 90dB (120Hz) Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 44738 шт: термін постачання 21-31 дні (днів) |
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SBRA401NT3G | onsemi |
Description: DIODE SCHOTTKY 40V 1A SMAPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DM74ALS573BWMX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 2.6mA, 24mA Delay Time - Propagation: 2ns Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DM74ALS573BWM | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 2.6mA, 24mA Delay Time - Propagation: 2ns Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NB3L202KMNGEVB | onsemi |
Description: EVAL BOARD FOR NB3L202KPackaging: Box Function: Clock Buffer Type: Timing Contents: Board(s) Utilized IC / Part: NB3L202K |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| 5085-2N4416A | onsemi |
Description: SMALL SIGNAL PRODUCTS Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NOIV1SE025KA-GTI | onsemi |
Description: IC IMAGE SENSOR 25MP 355UPGAPackaging: Tray Package / Case: 355-BSPGA, Window Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V Pixel Size: 4.5µm x 4.5µm Active Pixel Array: 5120H x 5120V Supplier Device Package: 355-µPGA Frames per Second: 53.0 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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BF244C | onsemi |
Description: RF MOSFET JFET 15V TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Current Rating (Amps): 50mA Mounting Type: Through Hole Frequency: 100MHz Configuration: N-Channel Technology: JFET Noise Figure: 1.5dB Supplier Device Package: TO-92-3 Voltage - Rated: 30 V Voltage - Test: 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP32C | onsemi |
Description: TRANS PNP 100V 3A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
на замовлення 107342 шт: термін постачання 21-31 дні (днів) |
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TIP32C | onsemi |
Description: TRANS PNP 100V 3A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP115 | onsemi |
Description: TRANS PNP DARL 60V 2A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP115 | onsemi |
Description: TRANS PNP DARL 60V 2A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
на замовлення 4638 шт: термін постачання 21-31 дні (днів) |
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TIP137 | onsemi |
Description: TRANS PNP DARL 100V 8A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 30mA, 6A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
на замовлення 20727 шт: термін постачання 21-31 дні (днів) |
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TIP42C | onsemi |
Description: TRANS PNP 100V 6A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6H848NLT1G | onsemi |
Description: MOSFET N-CH 80V 13A/59A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C025NT3G | onsemi |
Description: MOSFET N-CH 30V 20A/69A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C025NT3G | onsemi |
Description: MOSFET N-CH 30V 20A/69A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C806NT1G | onsemi |
Description: MOSFET N-CH 30V 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Power Dissipation (Max): 770mW (Ta), 30.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NOIX2SE9400B-LTI1 | onsemi |
Description: XGS9.4MP, 12PORT, COLOR 0Packaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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NOIX2SN9400B-LTI1 | onsemi |
Description: XGS9.4MP, 12PORT, MONO 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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NOIX2SE9400B-LTI | onsemi |
Description: XGS9.4MP, 12PORT, COLOR 0Packaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NOIX2SN9400B-LTI | onsemi |
Description: XGS9.4MP, 12PORT, MONO 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NOIX1SE9400B-LTI | onsemi |
Description: XGS9.4MP, 24PORT, COLOR 0Packaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NOIX1SN9400B-LTI | onsemi |
Description: XGS9.4MP, 24PORT, MONO 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74AC32DR2G-Q | onsemi |
Description: QUAD 2-INPUT OR GATEPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MC74AC32DR2G-Q | onsemi |
Description: QUAD 2-INPUT OR GATEPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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H11D1S | onsemi |
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-SMD Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 5µs, 5µs Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS7682-NC | onsemi |
Description: PT7 30V/20V NCH ER TREN MPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS7682-NC | onsemi |
Description: PT7 30V/20V NCH ER TREN MPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV14052BDR2G | onsemi |
Description: IC SWITCH DP4T 280OHM 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 280Ohm -3db Bandwidth: 17MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: DP4T Multiplexer/Demultiplexer Circuit: 2:4 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 7.5pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Number of Circuits: 2 Qualification: AEC-Q100 |
на замовлення 241398 шт: термін постачання 21-31 дні (днів) |
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NTMYS3D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 22A/87A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMYS3D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 22A/87A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C456NLWFET1G | onsemi |
Description: MOSFET N-CH 40V 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C456NLWFET1G | onsemi |
Description: MOSFET N-CH 40V 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C456NLWFHT1G | onsemi |
Description: T6 40V NCH LL IN U8FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 25500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C456NLWFHT1G | onsemi |
Description: T6 40V NCH LL IN U8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 25500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C456NLET1G-YE | onsemi |
Description: T6 40V NCH LL IN S08FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C456NLET1G-YE | onsemi |
Description: T6 40V NCH LL IN S08FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74LCX573DWG | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 1.5ns Supplier Device Package: 20-SOIC |
на замовлення 40329 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT373ADTRG | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5.1ns Supplier Device Package: 20-TSSOP |
на замовлення 22676 шт: термін постачання 21-31 дні (днів) |
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74LVTH373MTC | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 32mA, 64mA Delay Time - Propagation: 1.5ns Supplier Device Package: 20-TSSOP |
на замовлення 7050 шт: термін постачання 21-31 дні (днів) |
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74LVX373M | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 6ns Supplier Device Package: 20-SOIC |
на замовлення 27755 шт: термін постачання 21-31 дні (днів) |
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74LVX373M | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 6ns Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVT16373MTD | onsemi |
Description: IC D-TYPE TRANSP 8:8 48-TSSOPPackaging: Bulk Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Independent Circuits: 2 Current - Output High, Low: 32mA, 64mA Delay Time - Propagation: 1.5ns Supplier Device Package: 48-TSSOP |
на замовлення 3800 шт: термін постачання 21-31 дні (днів) |
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| MJC11015WP | onsemi |
Description: SMALL SIGNAL PRODUCTS Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJC11016WP | onsemi |
Description: SMALL SIGNAL PRODUCTS Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FPF1006 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFETFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 6-MicroFET (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FPF1006 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFETFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 6-MicroFET (2x2) |
на замовлення 5708 шт: термін постачання 21-31 дні (днів) |
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TIP147 | onsemi |
Description: TRANS PNP DARL 100V 10A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-247-3 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP147T | onsemi |
Description: TRANS PNP DARL 100V 10A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DM74ALS244AN | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-PDIPPackaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 15mA, 24mA Supplier Device Package: 20-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DM74ALS244ASJ | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 20-SOPPackaging: Tube Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 15mA, 24mA Supplier Device Package: 20-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DM74ALS244AMSAX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-SSOPPackaging: Tape & Reel (TR) Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 15mA, 24mA Supplier Device Package: 20-SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRD630CTT4G | onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 3A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 83885 шт: термін постачання 21-31 дні (днів) |
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BD140 | onsemi |
Description: TRANS PNP 80V 1.5A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBD1405A | onsemi |
Description: DIODE ARR GP 175V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 175 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBD1405A | onsemi |
Description: DIODE ARR GP 175V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 175 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX85C5V6 | onsemi |
Description: DIODE ZENER 5.6V 1.3W DO41GTolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41G Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 173000 шт: термін постачання 21-31 дні (днів) |
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| 1N4733A-T50R |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| NCV2931AST-5T3G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 28.75 грн |
| 8000+ | 27.06 грн |
| 12000+ | 26.75 грн |
| 20000+ | 24.78 грн |
| NCV2931AST-5T3G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 44738 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.46 грн |
| 10+ | 43.09 грн |
| 25+ | 38.83 грн |
| 100+ | 32.01 грн |
| 250+ | 29.89 грн |
| 500+ | 28.61 грн |
| 1000+ | 27.11 грн |
| SBRA401NT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DM74ALS573BWMX |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
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| DM74ALS573BWM |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
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| NB3L202KMNGEVB |
![]() |
Виробник: onsemi
Description: EVAL BOARD FOR NB3L202K
Packaging: Box
Function: Clock Buffer
Type: Timing
Contents: Board(s)
Utilized IC / Part: NB3L202K
Description: EVAL BOARD FOR NB3L202K
Packaging: Box
Function: Clock Buffer
Type: Timing
Contents: Board(s)
Utilized IC / Part: NB3L202K
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 23095.17 грн |
| NOIV1SE025KA-GTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENSOR 25MP 355UPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 5120H x 5120V
Supplier Device Package: 355-µPGA
Frames per Second: 53.0
Description: IC IMAGE SENSOR 25MP 355UPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 5120H x 5120V
Supplier Device Package: 355-µPGA
Frames per Second: 53.0
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 195627.38 грн |
| BF244C |
![]() |
Виробник: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Voltage - Test: 15 V
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| TIP32C |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 107342 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 654+ | 33.38 грн |
| TIP32C |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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| TIP115 |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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| TIP115 |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 4638 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 633+ | 34.73 грн |
| TIP137 |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 100V 8A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 30mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP DARL 100V 8A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 30mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 20727 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 319+ | 69.47 грн |
| TIP42C |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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| NVMFS6H848NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
на замовлення 474 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.36 грн |
| 10+ | 74.73 грн |
| 100+ | 49.96 грн |
| NTMFS4C025NT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 30.37 грн |
| NTMFS4C025NT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.22 грн |
| 10+ | 75.15 грн |
| 100+ | 50.26 грн |
| 500+ | 37.16 грн |
| 1000+ | 33.93 грн |
| 2000+ | 31.23 грн |
| NTMFS4C806NT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| NOIX2SE9400B-LTI1 |
![]() |
Виробник: onsemi
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 24946.82 грн |
| 8+ | 22210.75 грн |
| NOIX2SN9400B-LTI1 |
![]() |
Виробник: onsemi
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 24946.82 грн |
| NOIX2SE9400B-LTI |
![]() |
Виробник: onsemi
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
товару немає в наявності
В кошику
од. на суму грн.
| NOIX2SN9400B-LTI |
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Виробник: onsemi
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
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| NOIX1SE9400B-LTI |
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Виробник: onsemi
Description: XGS9.4MP, 24PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 24PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
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| NOIX1SN9400B-LTI |
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Виробник: onsemi
Description: XGS9.4MP, 24PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 24PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
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| MC74AC32DR2G-Q |
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Виробник: onsemi
Description: QUAD 2-INPUT OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: QUAD 2-INPUT OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.61 грн |
| MC74AC32DR2G-Q |
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Виробник: onsemi
Description: QUAD 2-INPUT OR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: QUAD 2-INPUT OR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| H11D1S |
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Виробник: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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| FDMS7682-NC |
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Виробник: onsemi
Description: PT7 30V/20V NCH ER TREN M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Description: PT7 30V/20V NCH ER TREN M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
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| FDMS7682-NC |
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Виробник: onsemi
Description: PT7 30V/20V NCH ER TREN M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Description: PT7 30V/20V NCH ER TREN M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
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| NLV14052BDR2G |
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Виробник: onsemi
Description: IC SWITCH DP4T 280OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 280Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: DP4T
Multiplexer/Demultiplexer Circuit: 2:4
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 7.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 2
Qualification: AEC-Q100
Description: IC SWITCH DP4T 280OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 280Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: DP4T
Multiplexer/Demultiplexer Circuit: 2:4
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 7.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 2
Qualification: AEC-Q100
на замовлення 241398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 621+ | 35.47 грн |
| NTMYS3D8N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 42.70 грн |
| NTMYS3D8N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.16 грн |
| 10+ | 94.10 грн |
| 100+ | 63.64 грн |
| 500+ | 47.50 грн |
| 1000+ | 44.96 грн |
| NVMFS5C456NLWFET1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 28.25 грн |
| 3000+ | 25.04 грн |
| 4500+ | 23.93 грн |
| 7500+ | 21.30 грн |
| 10500+ | 20.61 грн |
| 15000+ | 20.55 грн |
| NVMFS5C456NLWFET1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.11 грн |
| 10+ | 60.89 грн |
| 100+ | 40.34 грн |
| 500+ | 29.56 грн |
| NVMFS5C456NLWFHT1G |
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Виробник: onsemi
Description: T6 40V NCH LL IN U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 25500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 41.54 грн |
| 3000+ | 37.06 грн |
| 4500+ | 35.56 грн |
| 7500+ | 32.56 грн |
| NVMFS5C456NLWFHT1G |
![]() |
Виробник: onsemi
Description: T6 40V NCH LL IN U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 25500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.33 грн |
| 10+ | 85.86 грн |
| 100+ | 57.85 грн |
| 500+ | 43.01 грн |
| NVMFS5C456NLET1G-YE |
![]() |
Виробник: onsemi
Description: T6 40V NCH LL IN S08FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN S08FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
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| NVMFS5C456NLET1G-YE |
![]() |
Виробник: onsemi
Description: T6 40V NCH LL IN S08FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN S08FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
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| MC74LCX573DWG |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-SOIC
на замовлення 40329 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 412+ | 53.95 грн |
| MC74VHCT373ADTRG |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
на замовлення 22676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 494+ | 45.08 грн |
| 74LVTH373MTC |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-TSSOP
на замовлення 7050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 469+ | 47.30 грн |
| 74LVX373M |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
на замовлення 27755 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 427+ | 51.73 грн |
| 74LVX373M |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
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| 74LVT16373MTD |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 48-TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 2
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 48-TSSOP
Description: IC D-TYPE TRANSP 8:8 48-TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 2
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 48-TSSOP
на замовлення 3800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 252+ | 87.95 грн |
| FPF1006 |
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Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 46.89 грн |
| FPF1006 |
![]() |
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
на замовлення 5708 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.83 грн |
| 10+ | 67.48 грн |
| 25+ | 61.14 грн |
| 100+ | 50.84 грн |
| 250+ | 47.72 грн |
| 500+ | 45.83 грн |
| 1000+ | 43.56 грн |
| TIP147 |
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Виробник: onsemi
Description: TRANS PNP DARL 100V 10A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
Description: TRANS PNP DARL 100V 10A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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| TIP147T | ![]() |
![]() |
Виробник: onsemi
Description: TRANS PNP DARL 100V 10A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
Description: TRANS PNP DARL 100V 10A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
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| DM74ALS244AN |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-PDIP
Description: IC BUFF NON-INVERT 5.5V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-PDIP
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| DM74ALS244ASJ |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 20-SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 5.5V 20-SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SOP
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| DM74ALS244AMSAX |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SSOP
Description: IC BUFF NON-INVERT 5.5V 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SSOP
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| MBRD630CTT4G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARRAY SCHOTTKY 30V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 83885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 510+ | 43.60 грн |
| BD140 |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS PNP 80V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
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| MMBD1405A |
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Виробник: onsemi
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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| MMBD1405A |
![]() |
Виробник: onsemi
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
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| BZX85C5V6 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 5.6V 1.3W DO41G
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 1.3W DO41G
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 173000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6045+ | 3.61 грн |


































