| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CD4011BCSJ | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOPPackaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 15V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV7707DQCR2G | onsemi |
Description: IC DOOR MODULE DRIVER 36SSOPPackaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 8V ~ 18V Current - Supply: 6.5mA Supplier Device Package: 36-SSOP-EP Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV7707DQCR2G | onsemi |
Description: IC DOOR MODULE DRIVER 36SSOPPackaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 8V ~ 18V Current - Supply: 6.5mA Supplier Device Package: 36-SSOP-EP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1382 шт: термін постачання 21-31 дні (днів) |
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NCV7707DQDR2G | onsemi |
Description: NCV7707DQDR2G OPN FOR CAPackaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 28V Applications: Door Electronic Systems Current - Supply: 8mA Supplier Device Package: 36-SSOP-EP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NCV7707DQDR2G | onsemi |
Description: NCV7707DQDR2G OPN FOR CAPackaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 28V Applications: Door Electronic Systems Current - Supply: 8mA Supplier Device Package: 36-SSOP-EP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| NCV7707GEVB | onsemi |
Description: EVAL BOARD FOR NCV7707Packaging: Box Function: Half H-Bridge Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: NCV7707 Secondary Attributes: SPI Interface(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCV7707DQBR2G | onsemi |
Description: IC DRIVER HALF BRIDGE 36SSOP Packaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 28V Current - Supply: 8mA Supplier Device Package: 36-SSOP-EP Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCV7707CGEVB | onsemi |
Description: CV7707C DOOR MODULE DRIVER EVALU Packaging: Bulk Function: Half H-Bridge Driver (Internal FET) Type: Power Management Contents: Board(s) Utilized IC / Part: NCV7707C Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NVTFS5C478NLTAG | onsemi |
Description: MOSFET N-CHANNEL 40V 26A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C478NLTAG | onsemi |
Description: MOSFET N-CHANNEL 40V 26A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1654 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 3569 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H860NTAG | onsemi |
Description: MOSFET N-CH 80V 8A/30A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H860NTAG | onsemi |
Description: MOSFET N-CH 80V 8A/30A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 5330 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H860NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 290666 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C13NETAG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C13NETAG | onsemi |
Description: MOSFET N-CH 30V 14A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 84335 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C460NLTAG | onsemi |
Description: MOSFET N-CH 40V 19A/74A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C460NLTAG | onsemi |
Description: MOSFET N-CH 40V 19A/74A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1928 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C466NLWFTAG | onsemi |
Description: MOSFET N-CHANNEL 40V 51A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C466NLWFTAG | onsemi |
Description: MOSFET N-CHANNEL 40V 51A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 16164 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NLTAG | onsemi |
Description: MOSFET N-CH 80V 14.8A/64A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Power Dissipation (Max): 3.9W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H850NLTAG | onsemi |
Description: MOSFET N-CH 80V 14.8A/64A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Power Dissipation (Max): 3.9W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9880 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C658NLWFTAG | onsemi |
Description: MOSFET N-CH 60V 109A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 109A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS5C658NLWFTAG | onsemi |
Description: MOSFET N-CH 60V 109A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 109A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 366 шт: термін постачання 21-31 дні (днів) |
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NVMJS1D2N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 41A/237A 8LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 170µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NVMJS1D2N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 41A/237A 8LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 170µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 32990 шт: термін постачання 21-31 дні (днів) |
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LM2904MX | onsemi |
Description: LM2904-N LOW POWER DUAL OPERATIOPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 800µA (x2 Channels) Gain Bandwidth Product: 1 MHz Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 26 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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74AC74MTCX | onsemi |
Description: IC FF D-TYPE DBL 1-BIT 14-TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 20 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 160 MHz Input Capacitance: 4.5 pF Supplier Device Package: 14-TSSOP Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF005M | onsemi |
Description: BRIDGE RECT 1P 50V 1.5A 4-DIPPackaging: Tube Package / Case: 4-EDIP (0.300", 7.62mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-DIP Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 1832 шт: термін постачання 21-31 дні (днів) |
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1N5360B | onsemi |
Description: DIODE ZENER 25V 5W AXIALTolerance: ±5% Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 25 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 19 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQA27N25 | onsemi |
Description: MOSFET N-CH 250V 27A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDMF6840C3 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Packaging: Tape & Reel (TR) Features: Bootstrap Circuit, Status Flag Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: Synchronous Buck Converters Current - Output / Channel: 50A Technology: DrMOS Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BD436G | onsemi |
Description: TRANS PNP 32V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 36 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BD436 | onsemi |
Description: TRANS PNP 32V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 36 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SA1552T-TL-H | onsemi |
Description: TRANS PNP 160V 1.5A TP-FAPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
на замовлення 56540 шт: термін постачання 21-31 дні (днів) |
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SB360 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 180pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB360 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DO201ADPackaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 180pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 94626 шт: термін постачання 21-31 дні (днів) |
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1N4006 | onsemi |
Description: DIODE STANDARD 800V 1A DO41Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7SZ08P5 | onsemi |
Description: IC GATE AND 1CH 2-INP SC70-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SC-70-5 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SN74LS670N | onsemi |
Description: IC REGISTER FILE 1 X 1:1 16-PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 1:1 Type: Register File Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 4 Current - Output High, Low: 2.6mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP |
на замовлення 14568 шт: термін постачання 21-31 дні (днів) |
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MM74HC02M | onsemi |
Description: IC GATE NOR 4CH 2-INP 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 4642 шт: термін постачання 21-31 дні (днів) |
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LM1458MX | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Current - Supply: 2.3mA (x2 Channels) Slew Rate: 0.5V/µs Current - Input Bias: 80 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 20 mA Voltage - Supply Span (Min): 36 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM1458M | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Current - Supply: 2.3mA (x2 Channels) Slew Rate: 0.5V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 80 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 20 mA Voltage - Supply Span (Min): 36 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB50550U | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MODPackaging: Tube Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 2 A Voltage: 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSB50550UTD | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MODPackaging: Tube Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 2 A Voltage: 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ACE1502EN14 | onsemi |
Description: IC MCU 8BIT 2KB EEPROM 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Speed: 25MHz Program Memory Size: 2KB (2K x 8) RAM Size: 64 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: EEPROM EEPROM Size: 64 x 8 Core Processor: ACE1502 Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT Supplier Device Package: 14-MDIP Number of I/O: 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC79L05ACPG | onsemi |
Description: IC REG LINEAR -5V 100MA TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -30V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): -5V PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Temperature, Short Circuit |
на замовлення 59311 шт: термін постачання 21-31 дні (днів) |
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HGT1S2N120CN | onsemi |
Description: IGBT NPT 1200V 13A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A Supplier Device Package: TO-262 IGBT Type: NPT Td (on/off) @ 25°C: 25ns/205ns Switching Energy: 96µJ (on), 355µJ (off) Test Condition: 960V, 2.6A, 51Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 104 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HUFA75339P3 | onsemi |
Description: MOSFET N-CH 55V 75A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74AC08DR2G-Q | onsemi |
Description: QUAD 2-INPUT AND GATEPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MC74AC08DR2G-Q | onsemi |
Description: QUAD 2-INPUT AND GATEPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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NRVUS360VBT3G-GA01 | onsemi |
Description: DIODE STANDARD 600V 3A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DSF10TE-BT | onsemi |
Description: DSF10 - RECTIFIER DIODE, 1A, 100Packaging: Bulk |
на замовлення 87000 шт: термін постачання 21-31 дні (днів) |
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DSF10TG-BT | onsemi |
Description: DSF10 - RECTIFIER DIODE, 1A, 100Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NOIX1SF012KB-LTI | onsemi |
Description: IC IMAGE SENSOR 12.6MP 163CLGAPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 4096H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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FAD7171MX | onsemi |
Description: 600 V4A HIGH SIDE GATE DRIVER ICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 11ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 1.8V Current - Peak Output (Source, Sink): 4A, 4A Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAD7171MX | onsemi |
Description: 600 V4A HIGH SIDE GATE DRIVER ICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 11ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 1.8V Current - Peak Output (Source, Sink): 4A, 4A Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4826 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C05NAT1G | onsemi |
Description: MOSFET N-CH 30V 21.7A/78A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 2.57W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4C05NAT1G | onsemi |
Description: MOSFET N-CH 30V 21.7A/78A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 2.57W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V |
на замовлення 1474 шт: термін постачання 21-31 дні (днів) |
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NGTG25N120FL2WG | onsemi |
Description: IGBT TRENCH FS 1200V 50A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 87ns/179ns Switching Energy: 1.95mJ (on), 600µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 178 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 385 W |
товару немає в наявності |
В кошику од. на суму грн. |
| CD4011BCSJ |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товару немає в наявності
В кошику
од. на суму грн.
| NCV7707DQCR2G |
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Виробник: onsemi
Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| NCV7707DQCR2G |
![]() |
Виробник: onsemi
Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 618.08 грн |
| 10+ | 461.92 грн |
| 25+ | 428.66 грн |
| 100+ | 367.97 грн |
| 250+ | 351.60 грн |
| 500+ | 341.74 грн |
| NCV7707DQDR2G |
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Виробник: onsemi
Description: NCV7707DQDR2G OPN FOR CA
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Description: NCV7707DQDR2G OPN FOR CA
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 436.00 грн |
| NCV7707DQDR2G |
![]() |
Виробник: onsemi
Description: NCV7707DQDR2G OPN FOR CA
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Description: NCV7707DQDR2G OPN FOR CA
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 728.93 грн |
| 10+ | 547.96 грн |
| 25+ | 509.50 грн |
| 100+ | 438.43 грн |
| 250+ | 419.51 грн |
| 500+ | 408.10 грн |
| NCV7707GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCV7707
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707
Secondary Attributes: SPI Interface(s)
Description: EVAL BOARD FOR NCV7707
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707
Secondary Attributes: SPI Interface(s)
товару немає в наявності
В кошику
од. на суму грн.
| NCV7707DQBR2G |
Виробник: onsemi
Description: IC DRIVER HALF BRIDGE 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRIVER HALF BRIDGE 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| NCV7707CGEVB |
Виробник: onsemi
Description: CV7707C DOOR MODULE DRIVER EVALU
Packaging: Bulk
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707C
Embedded: No
Description: CV7707C DOOR MODULE DRIVER EVALU
Packaging: Bulk
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707C
Embedded: No
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS5C478NLTAG |
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Виробник: onsemi
Description: MOSFET N-CHANNEL 40V 26A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 40V 26A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 32.15 грн |
| NVTFS5C478NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CHANNEL 40V 26A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 40V 26A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1654 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.13 грн |
| 10+ | 63.72 грн |
| 100+ | 45.44 грн |
| 500+ | 33.50 грн |
| NVTFS6H860NLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3569 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.09 грн |
| 10+ | 73.51 грн |
| 100+ | 49.18 грн |
| 500+ | 36.36 грн |
| NVTFS6H860NTAG |
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Виробник: onsemi
Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 19.38 грн |
| 3000+ | 17.07 грн |
| 4500+ | 16.26 грн |
| NVTFS6H860NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.22 грн |
| 10+ | 43.43 грн |
| 100+ | 28.32 грн |
| 500+ | 20.48 грн |
| NVTFS6H860NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
на замовлення 290666 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.81 грн |
| 10+ | 67.04 грн |
| 100+ | 45.91 грн |
| 500+ | 35.88 грн |
| NVTFS4C13NETAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Qualification: AEC-Q101
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 30.56 грн |
| 3000+ | 27.14 грн |
| 4500+ | 25.97 грн |
| 7500+ | 23.15 грн |
| 10500+ | 22.74 грн |
| NVTFS4C13NETAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 14A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Qualification: AEC-Q101
на замовлення 84335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.49 грн |
| 10+ | 65.10 грн |
| 100+ | 43.34 грн |
| 500+ | 31.89 грн |
| NVTFS5C460NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/74A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/74A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 38.04 грн |
| NVTFS5C460NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/74A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/74A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1928 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.05 грн |
| 10+ | 78.04 грн |
| 100+ | 54.97 грн |
| 500+ | 41.39 грн |
| NVTFS5C466NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 40.08 грн |
| 3000+ | 37.89 грн |
| 4500+ | 36.98 грн |
| 7500+ | 34.22 грн |
| NVTFS5C466NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 16164 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.45 грн |
| 10+ | 87.18 грн |
| 100+ | 59.76 грн |
| 500+ | 44.55 грн |
| NVTFS6H850NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 45.10 грн |
| 3000+ | 40.31 грн |
| 4500+ | 38.72 грн |
| 7500+ | 36.01 грн |
| NVTFS6H850NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.32 грн |
| 10+ | 92.19 грн |
| 100+ | 62.41 грн |
| 500+ | 46.58 грн |
| NVTFS5C658NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 109A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 109A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS5C658NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 109A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 109A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Qualification: AEC-Q101
на замовлення 366 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.84 грн |
| 10+ | 101.97 грн |
| 100+ | 73.99 грн |
| NVMJS1D2N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 62.45 грн |
| NVMJS1D2N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 32990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 208.27 грн |
| 10+ | 129.63 грн |
| 100+ | 89.33 грн |
| 500+ | 69.08 грн |
| LM2904MX | ![]() |
![]() |
Виробник: onsemi
Description: LM2904-N LOW POWER DUAL OPERATIO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 800µA (x2 Channels)
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
Description: LM2904-N LOW POWER DUAL OPERATIO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 800µA (x2 Channels)
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 293+ | 73.98 грн |
| 74AC74MTCX |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE DBL 1-BIT 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE DBL 1-BIT 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 160 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Bits per Element: 1
товару немає в наявності
В кошику
од. на суму грн.
| DF005M |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 50V 1.5A 4-DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1P 50V 1.5A 4-DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 1832 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.86 грн |
| 50+ | 30.57 грн |
| 100+ | 27.02 грн |
| 500+ | 19.51 грн |
| 1000+ | 17.63 грн |
| 1N5360B |
![]() |
Виробник: onsemi
Description: DIODE ZENER 25V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 19 V
Description: DIODE ZENER 25V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 19 V
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| FQA27N25 |
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Виробник: onsemi
Description: MOSFET N-CH 250V 27A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Description: MOSFET N-CH 250V 27A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
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| FDMF6840C3 |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
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| BD436G |
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Виробник: onsemi
Description: TRANS PNP 32V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
Description: TRANS PNP 32V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
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| BD436 |
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Виробник: onsemi
Description: TRANS PNP 32V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
Description: TRANS PNP 32V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
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| 2SA1552T-TL-H |
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Виробник: onsemi
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 56540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 628+ | 34.58 грн |
| SB360 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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| SB360 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 94626 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1207+ | 18.13 грн |
| 1N4006 |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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| NC7SZ08P5 |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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| SN74LS670N |
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Виробник: onsemi
Description: IC REGISTER FILE 1 X 1:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Register File
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 4
Current - Output High, Low: 2.6mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Description: IC REGISTER FILE 1 X 1:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Register File
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 4
Current - Output High, Low: 2.6mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
на замовлення 14568 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 118+ | 184.23 грн |
| MM74HC02M | ![]() |
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Виробник: onsemi
Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 4642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.95 грн |
| 13+ | 25.15 грн |
| 55+ | 20.64 грн |
| 110+ | 18.17 грн |
| 275+ | 16.89 грн |
| 550+ | 16.12 грн |
| 1045+ | 15.27 грн |
| 2530+ | 14.62 грн |
| LM1458MX |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA (x2 Channels)
Slew Rate: 0.5V/µs
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA (x2 Channels)
Slew Rate: 0.5V/µs
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
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| LM1458M |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 36 V
Voltage - Supply Span (Max): 36 V
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| FSB50550U |
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Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2 A
Voltage: 500 V
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| FSB50550UTD |
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Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 2 A
Voltage: 500 V
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| ACE1502EN14 |
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Виробник: onsemi
Description: IC MCU 8BIT 2KB EEPROM 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 25MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 64 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: EEPROM
EEPROM Size: 64 x 8
Core Processor: ACE1502
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 14-MDIP
Number of I/O: 8
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 2KB EEPROM 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 25MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 64 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: EEPROM
EEPROM Size: 64 x 8
Core Processor: ACE1502
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
Supplier Device Package: 14-MDIP
Number of I/O: 8
DigiKey Programmable: Not Verified
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| MC79L05ACPG |
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Виробник: onsemi
Description: IC REG LINEAR -5V 100MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -5V
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -5V 100MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -30V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -5V
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 59311 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1975+ | 10.80 грн |
| HGT1S2N120CN |
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Виробник: onsemi
Description: IGBT NPT 1200V 13A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
Description: IGBT NPT 1200V 13A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
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| HUFA75339P3 |
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Виробник: onsemi
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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| MC74AC08DR2G-Q |
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Виробник: onsemi
Description: QUAD 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: QUAD 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.63 грн |
| MC74AC08DR2G-Q |
![]() |
Виробник: onsemi
Description: QUAD 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: QUAD 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NRVUS360VBT3G-GA01 |
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Виробник: onsemi
Description: DIODE STANDARD 600V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
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| DSF10TE-BT |
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на замовлення 87000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4365+ | 5.01 грн |
| DSF10TG-BT |
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на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4365+ | 5.01 грн |
| NOIX1SF012KB-LTI |
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Виробник: onsemi
Description: IC IMAGE SENSOR 12.6MP 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: IC IMAGE SENSOR 12.6MP 163CLGA
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 27394.44 грн |
| 5+ | 24824.43 грн |
| 10+ | 24244.28 грн |
| 25+ | 22100.36 грн |
| FAD7171MX |
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Виробник: onsemi
Description: 600 V4A HIGH SIDE GATE DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.8V
Current - Peak Output (Source, Sink): 4A, 4A
Grade: Automotive
Qualification: AEC-Q100
Description: 600 V4A HIGH SIDE GATE DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.8V
Current - Peak Output (Source, Sink): 4A, 4A
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 59.64 грн |
| FAD7171MX |
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Виробник: onsemi
Description: 600 V4A HIGH SIDE GATE DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.8V
Current - Peak Output (Source, Sink): 4A, 4A
Grade: Automotive
Qualification: AEC-Q100
Description: 600 V4A HIGH SIDE GATE DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 11ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.8V
Current - Peak Output (Source, Sink): 4A, 4A
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4826 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.41 грн |
| 10+ | 84.10 грн |
| 25+ | 76.44 грн |
| 100+ | 63.79 грн |
| 250+ | 60.02 грн |
| 500+ | 57.75 грн |
| 1000+ | 54.96 грн |
| NTMFS4C05NAT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 21.7A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.57W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Description: MOSFET N-CH 30V 21.7A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.57W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
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| NTMFS4C05NAT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 21.7A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.57W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Description: MOSFET N-CH 30V 21.7A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.57W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
на замовлення 1474 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.52 грн |
| 10+ | 81.92 грн |
| 100+ | 55.25 грн |
| 500+ | 41.10 грн |
| NGTG25N120FL2WG |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/179ns
Switching Energy: 1.95mJ (on), 600µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
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