| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FJPF5027RTU | onsemi |
 Description: TRANS NPN 800V 3A TO-220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Last Time Buy Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD5N40TF | onsemi |
Description: MOSFET N-CH 400V 3.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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FJP5027TU | onsemi |
Description: TRANS NPN 800V 3A TO220-3 Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 800 V Current - Collector (Ic) (Max): 3 A Part Status: Obsolete Supplier Device Package: TO-220-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA3845B | onsemi |
Description: IC OFFLINE SWITCH 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C (TA) Duty Cycle: 48% Frequency - Switching: Up to 500kHz Internal Switch(s): No Voltage - Supply (Vcc/Vdd): 12V ~ 25V Supplier Device Package: 8-DIP Voltage - Start Up: 8.4 V Control Features: Frequency Control Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJPF5027TU | onsemi |
Description: TRANS NPN 800V 3A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FJPF5021OTU | onsemi |
Description: TRANS NPN 500V 5A TO-220F-3 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-220F-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 4194 шт: термін постачання 21-31 дні (днів) |
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MM74HC589SJX | onsemi |
Description: IC SHIFT REGISTER 8-BIT 16-SOP Number of Bits per Element: 8 Part Status: Obsolete Supplier Device Package: 16-SOP Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Shift Register Function: Universal Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MM74HC589M | onsemi |
Description: IC SHIFT REGISTER 8-BIT 16-SOIC Number of Bits per Element: 8 Part Status: Obsolete Supplier Device Package: 16-SOIC Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Shift Register Function: Universal Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJPF5021RTU | onsemi |
Description: TRANS NPN 500V 5A TO220F-3 Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 5 A Part Status: Obsolete Supplier Device Package: TO-220F-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF2P40 | onsemi |
Description: MOSFET P-CH 400V 1.34A TO220F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQU30N06LTU | onsemi |
Description: MOSFET N-CH 60V 24A IPAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 5040 шт В кошику од. на суму грн. | ||||||||||||
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HUF76609D3ST | onsemi |
Description: MOSFET N-CH 100V 10A TO252AA Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Last Time Buy Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| FQD19N10TF | onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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FQD19N10TM | onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB5P10TM | onsemi |
Description: MOSFET P-CH 100V 4.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD17P06TM | onsemi |
Description: MOSFET P-CH 60V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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KSC5039H2 | onsemi |
Description: TRANS NPN 400V 5A TO-220F-3 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 70 W |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||
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NZT45H8 | onsemi |
Description: TRANS PNP 60V 8A SOT223-4 Packaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: SOT-223-4 Frequency - Transition: 40MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD30N06LTM | onsemi |
Description: MOSFET N-CH 60V 24A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB13N10LTM | onsemi |
Description: MOSFET N-CH 100V 12.8A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.75W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD14N15TM | onsemi |
Description: MOSFET N-CH 150V 10A DPAK Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD9N25TF | onsemi |
Description: MOSFET N-CH 250V 7.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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FQD9N25TM | onsemi |
Description: MOSFET N-CH 250V 7.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD6N40CTM | onsemi |
Description: MOSFET N-CH 400V 4.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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NZT44H8 | onsemi |
Description: TRANS NPN 60V 8A SOT223-4 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: SOT-223-4 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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FQI1P50TU | onsemi |
Description: MOSFET P-CH 500V 1.5A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-262 (I2PAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FQB1P50TM | onsemi |
Description: MOSFET P-CH 500V 1.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB13N06LTM | onsemi |
Description: MOSFET N-CH 60V 13.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V Power Dissipation (Max): 3.75W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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FYP2004DNTU | onsemi |
Description: DIODE ARRAY SCHOTTKY 40V TO220 Current - Reverse Leakage @ Vr: 1 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Operating Temperature - Junction: -65°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF5N50C | onsemi |
Description: MOSFET N-CH 500V 5A TO220F Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FSA5157P6X | onsemi |
Description: IC SWITCH SPDT X 1 360MOHM SC88 Number of Circuits: 1 Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 21pF Switch Time (Ton, Toff) (Max): 55ns, 30ns Channel-to-Channel Matching (ΔRon): 40mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -75dB @ 100kHz Charge Injection: 6pC Voltage - Supply, Single (V+): 1.65V ~ 4.3V Supplier Device Package: SC-88 (SC-70-6) -3db Bandwidth: 80MHz On-State Resistance (Max): 360mOhm (Typ) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FIN1001M5 | onsemi |
Description: IC DRIVER 1/0 SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1002M5 | onsemi |
Description: IC RECEIVER 0/1 SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSA5157L6X | onsemi |
Description: IC SW SPDTX1 360MOHM 6MICROPAK Number of Circuits: 1 Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 21pF Switch Time (Ton, Toff) (Max): 55ns, 30ns Channel-to-Channel Matching (ΔRon): 40mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -75dB @ 100kHz Charge Injection: 6pC Voltage - Supply, Single (V+): 1.65V ~ 4.3V Supplier Device Package: 6-MicroPak -3db Bandwidth: 80MHz On-State Resistance (Max): 360mOhm (Typ) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FQD3N60TM | onsemi |
Description: MOSFET N-CH 600V 2.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1002M5X | onsemi |
Description: IC TRANSCEIVER 0/1 SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/1 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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KA337 | onsemi |
Description: IC REG LIN NEG ADJ 1.5A TO220-3 Protection Features: Over Temperature, Short Circuit PSRR: 60dB (120Hz) Voltage - Output (Min/Fixed): -1.2V Voltage - Output (Max): -37V Supplier Device Package: TO-220-3 Number of Regulators: 1 Voltage - Input (Max): -40V Output Configuration: Negative Operating Temperature: 0°C ~ 125°C Current - Output: 1.5A Mounting Type: Through Hole Output Type: Adjustable Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||
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KA337TU | onsemi |
Description: IC REG LIN NEG ADJ 1.5A TO220-3 Output Configuration: Negative Protection Features: Over Temperature, Short Circuit PSRR: 60dB (120Hz) Voltage - Output (Min/Fixed): -1.2V Voltage - Output (Max): -37V Supplier Device Package: TO-220-3 Number of Regulators: 1 Voltage - Input (Max): -40V Operating Temperature: 0°C ~ 125°C Current - Output: 1.5A Mounting Type: Through Hole Output Type: Adjustable Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQU2N100TU | onsemi |
Description: MOSFET N-CH 1000V 1.6A IPAK |
на замовлення 1608 шт: термін постачання 21-31 дні (днів) |
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FIN1001M5X | onsemi |
Description: IC TRANSCEIVER 1/0 SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/0 Data Rate: 600Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HUFA76409D3 | onsemi |
Description: MOSFET N-CH 60V 18A IPAK Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA75309D3 | onsemi |
Description: MOSFET N-CH 55V 19A IPAK Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD6P25TM | onsemi |
Description: MOSFET P-CH 250V 4.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.35A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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FYPF2045DNTU | onsemi |
Description: DIODE ARRAY SCHOTTKY 45V TO220F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KSC5367FTU | onsemi |
Description: TRANS NPN 800V 3A TO220F-3 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 800 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-220F-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 3V Current - Collector Cutoff (Max): 20µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD5N50CTF | onsemi |
Description: MOSFET N-CH 500V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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FQU5N50CTU | onsemi |
Description: MOSFET N-CH 500V 4A IPAK Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB13N06TM | onsemi |
Description: MOSFET N-CH 60V 13A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||
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FQD5N60CTM | onsemi |
Description: MOSFET N-CH 600V 2.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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FQD12N20LTF | onsemi |
Description: MOSFET N-CH 200V 9A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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FQD12N20LTM | onsemi |
Description: MOSFET N-CH 200V 9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
на замовлення 41400 шт: термін постачання 21-31 дні (днів) |
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FQD12N20TM | onsemi |
Description: MOSFET N-CH 200V 9A DPAK Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA76407P3 | onsemi |
Description: MOSFET N-CH 60V 13A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD7P20TM | onsemi |
Description: MOSFET P-CH 200V 5.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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FQB7N20LTM | onsemi |
Description: MOSFET N-CH 200V 6.5A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MM74HC594M | onsemi |
Description: IC SR PUSH-PULL 8BIT 16-SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOIC Part Status: Obsolete Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA34063AD | onsemi |
 Description: IC REG BUCK BOOST ADJ 1.5A 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive or Negative Frequency - Switching: 100Hz ~ 100kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-SOIC Synchronous Rectifier: No Voltage - Input (Min): 3V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| FSA266K8X | onsemi | Description: IC SWITCH SPST-NO X 2 10OHM US8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FJP13009H2 | onsemi |
Description: TRANS NPN 400V 12A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 100 W |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||
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FJP13009 | onsemi |
Description: TRANS NPN 400V 12A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. |
| FJPF5027RTU |
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Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товару немає в наявності
В кошику
од. на суму грн.
| FQD5N40TF |
Виробник: onsemi
Description: MOSFET N-CH 400V 3.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 400V 3.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| FJP5027TU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| KA3845B |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
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| FJPF5027TU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| FJPF5021OTU |
|
Виробник: onsemi
Description: TRANS NPN 500V 5A TO-220F-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: TRANS NPN 500V 5A TO-220F-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 4194 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.56 грн |
| 50+ | 64.80 грн |
| 100+ | 58.02 грн |
| 500+ | 43.29 грн |
| 1000+ | 39.70 грн |
| 2000+ | 36.68 грн |
| MM74HC589SJX |
|
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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| MM74HC589M |
|
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FJPF5021RTU |
|
Виробник: onsemi
Description: TRANS NPN 500V 5A TO220F-3
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Description: TRANS NPN 500V 5A TO220F-3
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
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| FQPF2P40 |
|
Виробник: onsemi
Description: MOSFET P-CH 400V 1.34A TO220F
Description: MOSFET P-CH 400V 1.34A TO220F
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| FQU30N06LTU |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 24A IPAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 60V 24A IPAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 5040 шт
В кошику
од. на суму грн.
| HUF76609D3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 10A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 100V 10A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FQD19N10TF |
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
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Мінімальне замовлення: 2000 шт
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| FQD19N10TM |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
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| FQB5P10TM |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FQD17P06TM |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 33.23 грн |
| 5000+ | 29.73 грн |
| KSC5039H2 |
|
Виробник: onsemi
Description: TRANS NPN 400V 5A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
Description: TRANS NPN 400V 5A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| NZT45H8 |
|
Виробник: onsemi
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
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| FQD30N06LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 24A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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| FQB13N10LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 12.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 12.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FQD14N15TM |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FQD9N25TF |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FQD9N25TM |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FQD6N40CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 4.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 400V 4.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NZT44H8 |
|
Виробник: onsemi
Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| FQI1P50TU |
Виробник: onsemi
Description: MOSFET P-CH 500V 1.5A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET P-CH 500V 1.5A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| FQB1P50TM |
|
Виробник: onsemi
Description: MOSFET P-CH 500V 1.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 500V 1.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FQB13N06LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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Мінімальне замовлення: 800 шт
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| FYP2004DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 150°C
Description: DIODE ARRAY SCHOTTKY 40V TO220
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 150°C
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| FQPF5N50C |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| FSA5157P6X |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 1 360MOHM SC88
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: SC-88 (SC-70-6)
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPDT X 1 360MOHM SC88
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: SC-88 (SC-70-6)
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.31 грн |
| 6000+ | 15.29 грн |
| 9000+ | 15.09 грн |
| 15000+ | 13.94 грн |
| FIN1001M5 |
|
Виробник: onsemi
Description: IC DRIVER 1/0 SOT23-5
Description: IC DRIVER 1/0 SOT23-5
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| FIN1002M5 |
|
Виробник: onsemi
Description: IC RECEIVER 0/1 SOT23-5
Description: IC RECEIVER 0/1 SOT23-5
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| FSA5157L6X |
|
Виробник: onsemi
Description: IC SW SPDTX1 360MOHM 6MICROPAK
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-MicroPak
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC SW SPDTX1 360MOHM 6MICROPAK
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-MicroPak
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 14.36 грн |
| 10000+ | 12.72 грн |
| 15000+ | 12.16 грн |
| FQD3N60TM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FIN1002M5X |
|
Виробник: onsemi
Description: IC TRANSCEIVER 0/1 SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC TRANSCEIVER 0/1 SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.59 грн |
| KA337 |
|
Виробник: onsemi
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Output Configuration: Negative
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Bulk
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Output Configuration: Negative
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Bulk
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Мінімальне замовлення: 1200 шт
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| KA337TU |
|
Виробник: onsemi
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Output Configuration: Negative
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Tube
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Output Configuration: Negative
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Tube
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| FQU2N100TU |
|
Виробник: onsemi
Description: MOSFET N-CH 1000V 1.6A IPAK
Description: MOSFET N-CH 1000V 1.6A IPAK
на замовлення 1608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.97 грн |
| 10+ | 98.65 грн |
| 100+ | 76.91 грн |
| 500+ | 59.63 грн |
| 1000+ | 47.07 грн |
| FIN1001M5X |
|
Виробник: onsemi
Description: IC TRANSCEIVER 1/0 SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC TRANSCEIVER 1/0 SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 37.60 грн |
| 6000+ | 35.38 грн |
| HUFA76409D3 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 60V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| HUFA75309D3 |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 19A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description: MOSFET N-CH 55V 19A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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| FQD6P25TM |
|
Виробник: onsemi
Description: MOSFET P-CH 250V 4.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 250V 4.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| FYPF2045DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 45V TO220F
Description: DIODE ARRAY SCHOTTKY 45V TO220F
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| KSC5367FTU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220F-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220F-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 3V
Current - Collector Cutoff (Max): 20µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: TRANS NPN 800V 3A TO220F-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220F-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 3V
Current - Collector Cutoff (Max): 20µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| FQD5N50CTF |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Description: MOSFET N-CH 500V 4A DPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
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Мінімальне замовлення: 2000 шт
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| FQU5N50CTU |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 500V 4A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| FQB13N06TM |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 13A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 13A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1600 шт
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| FQD5N60CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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Мінімальне замовлення: 2500 шт
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| FQD12N20LTF |
Виробник: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
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Мінімальне замовлення: 2000 шт
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| FQD12N20LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
на замовлення 41400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 25.01 грн |
| 5000+ | 22.29 грн |
| FQD12N20TM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Description: MOSFET N-CH 200V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
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| HUFA76407P3 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| FQD7P20TM |
|
Виробник: onsemi
Description: MOSFET P-CH 200V 5.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 200V 5.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 36.69 грн |
| 5000+ | 32.87 грн |
| FQB7N20LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 6.5A D2PAK
Description: MOSFET N-CH 200V 6.5A D2PAK
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| MM74HC594M |
|
Виробник: onsemi
Description: IC SR PUSH-PULL 8BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
Description: IC SR PUSH-PULL 8BIT 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Bits per Element: 8
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од. на суму грн.
| KA34063AD |
|
Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Input (Min): 3V
Part Status: Obsolete
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Input (Min): 3V
Part Status: Obsolete
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| FSA266K8X |
Виробник: onsemi
Description: IC SWITCH SPST-NO X 2 10OHM US8
Description: IC SWITCH SPST-NO X 2 10OHM US8
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| FJP13009H2 |
|
Виробник: onsemi
Description: TRANS NPN 400V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
Description: TRANS NPN 400V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
товару немає в наявності
Мінімальне замовлення: 1200 шт
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| FJP13009 |
|
Виробник: onsemi
Description: TRANS NPN 400V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
Description: TRANS NPN 400V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
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од. на суму грн.