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FJP3305H1TU FJP3305H1TU onsemi fjp3305-d.pdf Description: TRANS NPN 400V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
3+113.73 грн
10+98.09 грн
100+76.46 грн
Мінімальне замовлення: 3
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FST3384QSCX FST3384QSCX onsemi FST3384.pdf Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
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KSC2335Y KSC2335Y onsemi KSC2335.pdf Description: TRANS NPN 400V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
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FQU20N06LTU FQU20N06LTU onsemi fqu20n06l-d.pdf Description: MOSFET N-CH 60V 17.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
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FST3384QSC FST3384QSC onsemi FST3384.pdf Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
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MM74HCT574SJ MM74HCT574SJ onsemi mm74hct573-d.pdf Description: IC FF D-TYPE SNGL 8BIT 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 33 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOP
Max Propagation Delay @ V, Max CL: 30ns @ 5V, 50pF
Number of Bits per Element: 8
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LM317D2TXM LM317D2TXM onsemi LM317_Rev_June2005.pdf Description: IC REG LINEAR POS ADJ 1.5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-263 (D2Pak)
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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FOD816300 FOD816300 onsemi FOD816.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Supplier Device Package: 4-DIP
Rise / Fall Time (Typ): 60µs, 53µs
Number of Channels: 1
Current - Output / Channel: 80 mA
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SS39 SS39 onsemi ss39-d.pdf Description: DIODE SCHOTTKY 90V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+20.12 грн
6000+18.96 грн
Мінімальне замовлення: 3000
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SSD2007ATF SSD2007ATF onsemi SSD2007A.pdf Description: MOSFET 2N-CH 50V 2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
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SSD2007ASTF SSD2007ASTF onsemi SSD2007A.pdf Description: MOSFET 2N-CH 50V 2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
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FQD1P50TF FQD1P50TF onsemi FQD1P50.pdf Description: MOSFET P-CH 500V 1.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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FQP3N30 FQP3N30 onsemi fqp3n30-d.pdf Description: MOSFET N-CH 300V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.6A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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FQD1P50TM FQD1P50TM onsemi FQD1P50.pdf Description: MOSFET P-CH 500V 1.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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FQP2N60C FQP2N60C onsemi FQPF2N60C-D.pdf Description: MOSFET N-CH 600V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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MM74HC4052WMX MM74HC4052WMX onsemi MM74HC405x.pdf Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 2
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MM74HC4051WMX MM74HC4051WMX onsemi MM74HC405x.pdf Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 90pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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H11AA1SR2M H11AA1SR2M onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 34000 шт:
термін постачання 21-31 дні (днів)
1000+27.45 грн
2000+24.95 грн
3000+24.20 грн
5000+21.90 грн
7000+21.42 грн
10000+20.96 грн
25000+19.60 грн
Мінімальне замовлення: 1000
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FQD13N06TF FQD13N06TF onsemi Description: MOSFET N-CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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IRLS510A IRLS510A onsemi IRLS510A.pdf Description: MOSFET N-CH 100V 4.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 2.25A, 5V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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NDS9430A NDS9430A onsemi NDS9430A.pdf Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
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FQP10N20CTSTU FQP10N20CTSTU onsemi TO220B03_Pkg_Dwg.pdf Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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RFD14N05SM9A RFD14N05SM9A onsemi rfd14n05sm9a-d.pdf Description: MOSFET N-CH 50V 14A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+26.13 грн
Мінімальне замовлення: 2500
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FQD2N60CTM FQD2N60CTM onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+24.07 грн
Мінімальне замовлення: 2500
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L272AM L272AM onsemi l272a-d.pdf Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 8mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 700 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 28 V
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RFD3055SM9A RFD3055SM9A onsemi RFD3055SM.pdf Description: MOSFET N-CH 60V 12A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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KA317MTU KA317MTU onsemi TO220B03_Pkg_Dwg.pdf Description: IC REG LIN POS ADJ 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Temperature, Short Circuit
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FOD852300 FOD852300 onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 57486 шт:
термін постачання 21-31 дні (днів)
4+89.83 грн
10+53.41 грн
100+36.53 грн
500+28.06 грн
1000+26.15 грн
2000+24.58 грн
5000+22.56 грн
10000+21.59 грн
25000+20.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FST3125QSCX FST3125QSCX onsemi 74fst3125.pdf Description: IC BUS SWITCH 1 X 1:1 16-QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
Part Status: Obsolete
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FOD852W FOD852W onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Box
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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В кошику  од. на суму  грн.
FST3125QSC FST3125QSC onsemi 74fst3125.pdf Description: IC BUS SWITCH 1 X 1:1 16-QSOP
Packaging: Tube
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
Part Status: Obsolete
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В кошику  од. на суму  грн.
FOD8523S FOD8523S onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
4+90.65 грн
10+53.89 грн
100+36.86 грн
500+28.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FOD852S FOD852S onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 2517 шт:
термін постачання 21-31 дні (днів)
5+80.76 грн
10+54.36 грн
100+40.19 грн
500+31.80 грн
1000+29.87 грн
2000+28.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FOD852 FOD852 onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3831 шт:
термін постачання 21-31 дні (днів)
4+93.13 грн
10+55.23 грн
100+37.87 грн
500+29.14 грн
1000+27.17 грн
2000+25.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FOD852300W FOD852300W onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3534 шт:
термін постачання 21-31 дні (днів)
5+78.29 грн
10+52.85 грн
100+39.08 грн
500+30.89 грн
1000+29.00 грн
2000+27.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FMS6151L6X FMS6151L6X onsemi fms6151-d.pdf Description: IC VIDEO FILTER 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 2.5V ~ 3.6V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 6-MicroPak
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FQPF3N30 FQPF3N30 onsemi FQPF3N30.pdf Description: MOSFET N-CH 300V 1.95A TO220F
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FJP5027R FJP5027R onsemi fjp5027-d.pdf Description: TRANS NPN 800V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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В кошику  од. на суму  грн.
FJPF5027RYDTU FJPF5027RYDTU onsemi fjpf5027-d.pdf Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
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FJP5027O FJP5027O onsemi fjp5027-d.pdf Description: TRANS NPN 800V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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FJP5027RHTU FJP5027RHTU onsemi fjp5027-d.pdf Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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FQD7P06TF FQD7P06TF onsemi Description: MOSFET P-CH 60V 5.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
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FQD20N06LTM FQD20N06LTM onsemi Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
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FQP20N06TSTU FQP20N06TSTU onsemi Description: MOSFET N-CH 60V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
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FQPF9N15 FQPF9N15 onsemi FQPF9N15.pdf Description: MOSFET N-CH 150V 6.9A TO220F
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FQP17N08L FQP17N08L onsemi FQP17N08L.pdf Description: MOSFET N-CH 80V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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RFP3055 RFP3055 onsemi RFD3055SM.pdf Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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FQD20N06TF FQD20N06TF onsemi Description: MOSFET N-CH 60V 16.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
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KSD1588RTU KSD1588RTU onsemi ksd1588-d.pdf Description: TRANS NPN 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 1V
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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KSD1588OTU KSD1588OTU onsemi ksd1588-d.pdf Description: TRANS NPN 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3A, 1V
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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FJPF3305H2TU FJPF3305H2TU onsemi fjpf3305-d.pdf Description: TRANS NPN 400V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
3+114.55 грн
10+98.88 грн
100+77.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FQD8P10TM FQD8P10TM onsemi fqu8p10-d.pdf Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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FQD8P10TF FQD8P10TF onsemi Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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FJPF13007H1TU FJPF13007H1TU onsemi fjpf13007-d.pdf Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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KSD568YTU KSD568YTU onsemi KSD568%2C569.pdf Description: TRANS NPN 60V 7A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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FJPF13007H2 FJPF13007H2 onsemi fjpf13007-d.pdf Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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FJPF13007 FJPF13007 onsemi fjpf13007-d.pdf Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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FJPF13007H1 FJPF13007H1 onsemi fjpf13007-d.pdf Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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H11AA4SR2M H11AA4SR2M onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+28.12 грн
2000+25.57 грн
3000+24.80 грн
5000+22.45 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FJPF13007H2TU FJPF13007H2TU onsemi fjpf13007-d.pdf Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FJP3305H1TU fjp3305-d.pdf
FJP3305H1TU
Виробник: onsemi
Description: TRANS NPN 400V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.73 грн
10+98.09 грн
100+76.46 грн
Мінімальне замовлення: 3
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FST3384QSCX FST3384.pdf
FST3384QSCX
Виробник: onsemi
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
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KSC2335Y KSC2335.pdf
KSC2335Y
Виробник: onsemi
Description: TRANS NPN 400V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
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FQU20N06LTU fqu20n06l-d.pdf
FQU20N06LTU
Виробник: onsemi
Description: MOSFET N-CH 60V 17.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
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FST3384QSC FST3384.pdf
FST3384QSC
Виробник: onsemi
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Tube
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
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MM74HCT574SJ mm74hct573-d.pdf
MM74HCT574SJ
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 33 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOP
Max Propagation Delay @ V, Max CL: 30ns @ 5V, 50pF
Number of Bits per Element: 8
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LM317D2TXM LM317_Rev_June2005.pdf
LM317D2TXM
Виробник: onsemi
Description: IC REG LINEAR POS ADJ 1.5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-263 (D2Pak)
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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FOD816300 FOD816.pdf
FOD816300
Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Supplier Device Package: 4-DIP
Rise / Fall Time (Typ): 60µs, 53µs
Number of Channels: 1
Current - Output / Channel: 80 mA
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SS39 ss39-d.pdf
SS39
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+20.12 грн
6000+18.96 грн
Мінімальне замовлення: 3000
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SSD2007ATF SSD2007A.pdf
SSD2007ATF
Виробник: onsemi
Description: MOSFET 2N-CH 50V 2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
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SSD2007ASTF SSD2007A.pdf
SSD2007ASTF
Виробник: onsemi
Description: MOSFET 2N-CH 50V 2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
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FQD1P50TF FQD1P50.pdf
FQD1P50TF
Виробник: onsemi
Description: MOSFET P-CH 500V 1.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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FQP3N30 fqp3n30-d.pdf
FQP3N30
Виробник: onsemi
Description: MOSFET N-CH 300V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.6A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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FQD1P50TM FQD1P50.pdf
FQD1P50TM
Виробник: onsemi
Description: MOSFET P-CH 500V 1.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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FQP2N60C FQPF2N60C-D.pdf
FQP2N60C
Виробник: onsemi
Description: MOSFET N-CH 600V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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MM74HC4052WMX MM74HC405x.pdf
MM74HC4052WMX
Виробник: onsemi
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 2
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MM74HC4051WMX MM74HC405x.pdf
MM74HC4051WMX
Виробник: onsemi
Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 90pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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H11AA1SR2M h11aa4m-d.pdf
H11AA1SR2M
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 34000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+27.45 грн
2000+24.95 грн
3000+24.20 грн
5000+21.90 грн
7000+21.42 грн
10000+20.96 грн
25000+19.60 грн
Мінімальне замовлення: 1000
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FQD13N06TF
FQD13N06TF
Виробник: onsemi
Description: MOSFET N-CH 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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IRLS510A IRLS510A.pdf
IRLS510A
Виробник: onsemi
Description: MOSFET N-CH 100V 4.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 2.25A, 5V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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NDS9430A NDS9430A.pdf
NDS9430A
Виробник: onsemi
Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
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FQP10N20CTSTU TO220B03_Pkg_Dwg.pdf
FQP10N20CTSTU
Виробник: onsemi
Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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RFD14N05SM9A rfd14n05sm9a-d.pdf
RFD14N05SM9A
Виробник: onsemi
Description: MOSFET N-CH 50V 14A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+26.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FQD2N60CTM fqu2n60c-d.pdf
FQD2N60CTM
Виробник: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+24.07 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
L272AM l272a-d.pdf
L272AM
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 8mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 7 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 700 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 28 V
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RFD3055SM9A RFD3055SM.pdf
RFD3055SM9A
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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KA317MTU TO220B03_Pkg_Dwg.pdf
KA317MTU
Виробник: onsemi
Description: IC REG LIN POS ADJ 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Temperature, Short Circuit
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FOD852300 fod852-d.pdf
FOD852300
Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 57486 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.83 грн
10+53.41 грн
100+36.53 грн
500+28.06 грн
1000+26.15 грн
2000+24.58 грн
5000+22.56 грн
10000+21.59 грн
25000+20.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FST3125QSCX 74fst3125.pdf
FST3125QSCX
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 16-QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
Part Status: Obsolete
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FOD852W fod852-d.pdf
FOD852W
Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Box
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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FST3125QSC 74fst3125.pdf
FST3125QSC
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 16-QSOP
Packaging: Tube
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
Part Status: Obsolete
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FOD8523S fod852-d.pdf
FOD8523S
Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.65 грн
10+53.89 грн
100+36.86 грн
500+28.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FOD852S fod852-d.pdf
FOD852S
Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 2517 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+80.76 грн
10+54.36 грн
100+40.19 грн
500+31.80 грн
1000+29.87 грн
2000+28.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FOD852 fod852-d.pdf
FOD852
Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3831 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.13 грн
10+55.23 грн
100+37.87 грн
500+29.14 грн
1000+27.17 грн
2000+25.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FOD852300W fod852-d.pdf
FOD852300W
Виробник: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.29 грн
10+52.85 грн
100+39.08 грн
500+30.89 грн
1000+29.00 грн
2000+27.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FMS6151L6X fms6151-d.pdf
FMS6151L6X
Виробник: onsemi
Description: IC VIDEO FILTER 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 2.5V ~ 3.6V
Applications: Consumer Video
Standards: NTSC
Supplier Device Package: 6-MicroPak
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FQPF3N30 FQPF3N30.pdf
FQPF3N30
Виробник: onsemi
Description: MOSFET N-CH 300V 1.95A TO220F
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FJP5027R fjp5027-d.pdf
FJP5027R
Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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FJPF5027RYDTU fjpf5027-d.pdf
FJPF5027RYDTU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
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FJP5027O fjp5027-d.pdf
FJP5027O
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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FJP5027RHTU fjp5027-d.pdf
FJP5027RHTU
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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FQD7P06TF
FQD7P06TF
Виробник: onsemi
Description: MOSFET P-CH 60V 5.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
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FQD20N06LTM
FQD20N06LTM
Виробник: onsemi
Description: MOSFET N-CH 60V 17.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
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FQP20N06TSTU
FQP20N06TSTU
Виробник: onsemi
Description: MOSFET N-CH 60V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
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FQPF9N15 FQPF9N15.pdf
FQPF9N15
Виробник: onsemi
Description: MOSFET N-CH 150V 6.9A TO220F
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FQP17N08L FQP17N08L.pdf
FQP17N08L
Виробник: onsemi
Description: MOSFET N-CH 80V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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RFP3055 RFD3055SM.pdf
RFP3055
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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FQD20N06TF
FQD20N06TF
Виробник: onsemi
Description: MOSFET N-CH 60V 16.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
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KSD1588RTU ksd1588-d.pdf
KSD1588RTU
Виробник: onsemi
Description: TRANS NPN 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 1V
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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KSD1588OTU ksd1588-d.pdf
KSD1588OTU
Виробник: onsemi
Description: TRANS NPN 60V 7A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3A, 1V
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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FJPF3305H2TU fjpf3305-d.pdf
FJPF3305H2TU
Виробник: onsemi
Description: TRANS NPN 400V 4A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.55 грн
10+98.88 грн
100+77.12 грн
Мінімальне замовлення: 3
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FQD8P10TM fqu8p10-d.pdf
FQD8P10TM
Виробник: onsemi
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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FQD8P10TF
FQD8P10TF
Виробник: onsemi
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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FJPF13007H1TU fjpf13007-d.pdf
FJPF13007H1TU
Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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KSD568YTU KSD568%2C569.pdf
KSD568YTU
Виробник: onsemi
Description: TRANS NPN 60V 7A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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FJPF13007H2 fjpf13007-d.pdf
FJPF13007H2
Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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FJPF13007 fjpf13007-d.pdf
FJPF13007
Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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FJPF13007H1 fjpf13007-d.pdf
FJPF13007H1
Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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H11AA4SR2M h11aa4m-d.pdf
H11AA4SR2M
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+28.12 грн
2000+25.57 грн
3000+24.80 грн
5000+22.45 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FJPF13007H2TU fjpf13007-d.pdf
FJPF13007H2TU
Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
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