| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQB7N10LTM | onsemi |
 Description: MOSFET N-CH 100V 7.3A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB20N06LTM | onsemi |
Description: MOSFET N-CH 60V 21A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FFPF10F150STU | onsemi |
Description: DIODE AVAL 1500V 10A TO220F2L Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170 ns Technology: Avalanche Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KSC5338D | onsemi |
Description: TRANS NPN 450V 5A TO-220-3 Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 11MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
на замовлення 698 шт: термін постачання 21-31 дні (днів) |
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IRLS630A | onsemi |
Description: MOSFET N-CH 200V 6.5A TO220-3 Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 36W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD12P10TF | onsemi |
Description: MOSFET P-CH 100V 9.4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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FQD12P10TM | onsemi |
Description: MOSFET P-CH 100V 9.4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KSC5338DTU | onsemi |
Description: TRANS NPN 450V 5A TO-220-3 Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 11MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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QSB34CGR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD GW Voltage - DC Reverse (Vr) (Max): 32 V Part Status: Active Current - Dark (Typ): 30nA Active Area: 6.5mm² Spectral Range: 400nm ~ 1100nm Viewing Angle: 120° Response Time: 50ns Operating Temperature: -25°C ~ 85°C Diode Type: Pin Mounting Type: Surface Mount Wavelength: 940nm Package / Case: 2-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 9502 шт: термін постачання 21-31 дні (днів) |
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LMV324AMTC14X | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP Current - Output / Channel: 34 mA Number of Circuits: 4 Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 2.7 V Supplier Device Package: 14-TSSOP Voltage - Input Offset: 1 mV Current - Input Bias: 1 nA Gain Bandwidth Product: 1.4 MHz Slew Rate: 1.5V/µs Current - Supply: 100µA Operating Temperature: -40°C ~ 125°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJP5027RTU | onsemi |
Description: TRANS NPN 800V 3A TO-220-3 Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 800 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 830 шт: термін постачання 21-31 дні (днів) |
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FJP5027OTU | onsemi |
Description: TRANS NPN 800V 3A TO220-3 Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 800 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
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MM74HC589MX | onsemi |
Description: IC SHIFT REGISTER 8-BIT 16-SOIC Number of Bits per Element: 8 Part Status: Obsolete Supplier Device Package: 16-SOIC Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Shift Register Function: Universal Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRLR230ATM | onsemi |
Description: MOSFET N-CH 200V 7.5A DPAK Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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NC7WB3306K8X | onsemi |
Description: IC BUS SWITCH 1 X 1:1 US8 Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: US8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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FJPF5027OTU | onsemi |
Description: TRANS NPN 800V 3A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJPF5027RTU | onsemi |
Description: TRANS NPN 800V 3A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Last Time Buy Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD5N40TF | onsemi |
Description: MOSFET N-CH 400V 3.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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FJP5027TU | onsemi |
Description: TRANS NPN 800V 3A TO220-3 Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 800 V Current - Collector (Ic) (Max): 3 A Part Status: Obsolete Supplier Device Package: TO-220-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KA3845B | onsemi |
Description: IC OFFLINE SWITCH 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C (TA) Duty Cycle: 48% Frequency - Switching: Up to 500kHz Internal Switch(s): No Voltage - Supply (Vcc/Vdd): 12V ~ 25V Supplier Device Package: 8-DIP Voltage - Start Up: 8.4 V Control Features: Frequency Control Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJPF5027TU | onsemi |
Description: TRANS NPN 800V 3A TO-220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220F-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 40 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FJPF5021OTU | onsemi |
Description: TRANS NPN 500V 5A TO-220F-3 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-220F-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 4194 шт: термін постачання 21-31 дні (днів) |
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MM74HC589SJX | onsemi |
Description: IC SHIFT REGISTER 8-BIT 16-SOP Number of Bits per Element: 8 Part Status: Obsolete Supplier Device Package: 16-SOP Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Shift Register Function: Universal Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MM74HC589M | onsemi |
Description: IC SHIFT REGISTER 8-BIT 16-SOIC Number of Bits per Element: 8 Part Status: Obsolete Supplier Device Package: 16-SOIC Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Shift Register Function: Universal Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJPF5021RTU | onsemi |
Description: TRANS NPN 500V 5A TO220F-3 Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 5 A Part Status: Obsolete Supplier Device Package: TO-220F-3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF2P40 | onsemi |
Description: MOSFET P-CH 400V 1.34A TO220F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQU30N06LTU | onsemi |
Description: MOSFET N-CH 60V 24A IPAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 5040 шт В кошику од. на суму грн. | ||||||||||||
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HUF76609D3ST | onsemi |
Description: MOSFET N-CH 100V 10A TO252AA Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Last Time Buy Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| FQD19N10TF | onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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FQD19N10TM | onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB5P10TM | onsemi |
Description: MOSFET P-CH 100V 4.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD17P06TM | onsemi |
Description: MOSFET P-CH 60V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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KSC5039H2 | onsemi |
Description: TRANS NPN 400V 5A TO-220F-3 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 70 W |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||
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NZT45H8 | onsemi |
Description: TRANS PNP 60V 8A SOT223-4 Packaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: SOT-223-4 Frequency - Transition: 40MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD30N06LTM | onsemi |
Description: MOSFET N-CH 60V 24A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB13N10LTM | onsemi |
Description: MOSFET N-CH 100V 12.8A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.75W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD14N15TM | onsemi |
Description: MOSFET N-CH 150V 10A DPAK Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD9N25TF | onsemi |
Description: MOSFET N-CH 250V 7.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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FQD9N25TM | onsemi |
Description: MOSFET N-CH 250V 7.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD6N40CTM | onsemi |
Description: MOSFET N-CH 400V 4.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NZT44H8 | onsemi |
Description: TRANS NPN 60V 8A SOT223-4 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: SOT-223-4 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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FQI1P50TU | onsemi |
Description: MOSFET P-CH 500V 1.5A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-262 (I2PAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FQB1P50TM | onsemi |
Description: MOSFET P-CH 500V 1.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQB13N06LTM | onsemi |
Description: MOSFET N-CH 60V 13.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V Power Dissipation (Max): 3.75W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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FYP2004DNTU | onsemi |
Description: DIODE ARRAY SCHOTTKY 40V TO220 Current - Reverse Leakage @ Vr: 1 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Operating Temperature - Junction: -65°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQPF5N50C | onsemi |
Description: MOSFET N-CH 500V 5A TO220F Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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FSA5157P6X | onsemi |
Description: IC SWITCH SPDT X 1 360MOHM SC88 Number of Circuits: 1 Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 21pF Switch Time (Ton, Toff) (Max): 55ns, 30ns Channel-to-Channel Matching (ΔRon): 40mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -75dB @ 100kHz Charge Injection: 6pC Voltage - Supply, Single (V+): 1.65V ~ 4.3V Supplier Device Package: SC-88 (SC-70-6) -3db Bandwidth: 80MHz On-State Resistance (Max): 360mOhm (Typ) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FIN1001M5 | onsemi |
Description: IC DRIVER 1/0 SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1002M5 | onsemi |
Description: IC RECEIVER 0/1 SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSA5157L6X | onsemi |
Description: IC SW SPDTX1 360MOHM 6MICROPAK Number of Circuits: 1 Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 21pF Switch Time (Ton, Toff) (Max): 55ns, 30ns Channel-to-Channel Matching (ΔRon): 40mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -75dB @ 100kHz Charge Injection: 6pC Voltage - Supply, Single (V+): 1.65V ~ 4.3V Supplier Device Package: 6-MicroPak -3db Bandwidth: 80MHz On-State Resistance (Max): 360mOhm (Typ) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FQD3N60TM | onsemi |
Description: MOSFET N-CH 600V 2.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FIN1002M5X | onsemi |
Description: IC TRANSCEIVER 0/1 SOT235 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/1 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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KA337 | onsemi |
Description: IC REG LIN NEG ADJ 1.5A TO220-3 Protection Features: Over Temperature, Short Circuit PSRR: 60dB (120Hz) Voltage - Output (Min/Fixed): -1.2V Voltage - Output (Max): -37V Supplier Device Package: TO-220-3 Number of Regulators: 1 Voltage - Input (Max): -40V Output Configuration: Negative Operating Temperature: 0°C ~ 125°C Current - Output: 1.5A Mounting Type: Through Hole Output Type: Adjustable Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||
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KA337TU | onsemi |
Description: IC REG LIN NEG ADJ 1.5A TO220-3 Output Configuration: Negative Protection Features: Over Temperature, Short Circuit PSRR: 60dB (120Hz) Voltage - Output (Min/Fixed): -1.2V Voltage - Output (Max): -37V Supplier Device Package: TO-220-3 Number of Regulators: 1 Voltage - Input (Max): -40V Operating Temperature: 0°C ~ 125°C Current - Output: 1.5A Mounting Type: Through Hole Output Type: Adjustable Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQU2N100TU | onsemi |
Description: MOSFET N-CH 1000V 1.6A IPAK |
на замовлення 1608 шт: термін постачання 21-31 дні (днів) |
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FIN1001M5X | onsemi |
Description: IC TRANSCEIVER 1/0 SOT235 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/0 Data Rate: 600Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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HUFA76409D3 | onsemi |
Description: MOSFET N-CH 60V 18A IPAK Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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HUFA75309D3 | onsemi |
Description: MOSFET N-CH 55V 19A IPAK Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FQD6P25TM | onsemi |
Description: MOSFET P-CH 250V 4.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.35A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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FYPF2045DNTU | onsemi |
Description: DIODE ARRAY SCHOTTKY 45V TO220F |
товару немає в наявності |
В кошику од. на суму грн. |
| FQB7N10LTM |
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Виробник: onsemi
Description: MOSFET N-CH 100V 7.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 7.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FQB20N06LTM |
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Виробник: onsemi
Description: MOSFET N-CH 60V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 53W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FFPF10F150STU |
|
Виробник: onsemi
Description: DIODE AVAL 1500V 10A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE AVAL 1500V 10A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Avalanche
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
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| KSC5338D |
|
Виробник: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRANS NPN 450V 5A TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
на замовлення 698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 73.91 грн |
| 200+ | 44.52 грн |
| 600+ | 35.80 грн |
| IRLS630A |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 6.5A TO220-3
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 36W (Tc)
Description: MOSFET N-CH 200V 6.5A TO220-3
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.25A, 5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 36W (Tc)
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| FQD12P10TF |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 9.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET P-CH 100V 9.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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Мінімальне замовлення: 2000 шт
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| FQD12P10TM |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 9.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET P-CH 100V 9.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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| KSC5338DTU |
|
Виробник: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 450V 5A TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| QSB34CGR |
|
Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 9502 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 81.67 грн |
| 10+ | 55.59 грн |
| 100+ | 41.41 грн |
| 500+ | 32.95 грн |
| LMV324AMTC14X |
|
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Current - Output / Channel: 34 mA
Number of Circuits: 4
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Supplier Device Package: 14-TSSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.5V/µs
Current - Supply: 100µA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Current - Output / Channel: 34 mA
Number of Circuits: 4
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.7 V
Supplier Device Package: 14-TSSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1 nA
Gain Bandwidth Product: 1.4 MHz
Slew Rate: 1.5V/µs
Current - Supply: 100µA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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| FJP5027RTU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 800V 3A TO-220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 123.70 грн |
| 50+ | 56.73 грн |
| 100+ | 50.62 грн |
| 500+ | 37.45 грн |
| FJP5027OTU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.39 грн |
| 10+ | 71.24 грн |
| 100+ | 55.44 грн |
| 500+ | 44.10 грн |
| 1000+ | 35.92 грн |
| 2000+ | 33.82 грн |
| MM74HC589MX |
|
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| IRLR230ATM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 7.5A DPAK
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 7.5A DPAK
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NC7WB3306K8X |
|
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FJPF5027OTU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
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| FJPF5027RTU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
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| FQD5N40TF |
Виробник: onsemi
Description: MOSFET N-CH 400V 3.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 400V 3.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2000 шт
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| FJP5027TU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| KA3845B |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 48%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 8.4 V
Control Features: Frequency Control
Part Status: Obsolete
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| FJPF5027TU |
|
Виробник: onsemi
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
Description: TRANS NPN 800V 3A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 40 W
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Мінімальне замовлення: 1000 шт
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| FJPF5021OTU |
|
Виробник: onsemi
Description: TRANS NPN 500V 5A TO-220F-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: TRANS NPN 500V 5A TO-220F-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 4194 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 139.56 грн |
| 50+ | 64.80 грн |
| 100+ | 58.02 грн |
| 500+ | 43.29 грн |
| 1000+ | 39.70 грн |
| 2000+ | 36.68 грн |
| MM74HC589SJX |
|
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC SHIFT REGISTER 8-BIT 16-SOP
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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| MM74HC589M |
|
Виробник: onsemi
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC SHIFT REGISTER 8-BIT 16-SOIC
Number of Bits per Element: 8
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Shift Register
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FJPF5021RTU |
|
Виробник: onsemi
Description: TRANS NPN 500V 5A TO220F-3
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Description: TRANS NPN 500V 5A TO220F-3
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
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| FQPF2P40 |
|
Виробник: onsemi
Description: MOSFET P-CH 400V 1.34A TO220F
Description: MOSFET P-CH 400V 1.34A TO220F
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| FQU30N06LTU |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 24A IPAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 60V 24A IPAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Мінімальне замовлення: 5040 шт
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| HUF76609D3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 10A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 100V 10A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Мінімальне замовлення: 2500 шт
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| FQD19N10TF |
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
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Мінімальне замовлення: 2000 шт
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| FQD19N10TM |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
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| FQB5P10TM |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FQD17P06TM |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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Мінімальне замовлення: 2500 шт
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| KSC5039H2 |
|
Виробник: onsemi
Description: TRANS NPN 400V 5A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
Description: TRANS NPN 400V 5A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
товару немає в наявності
Мінімальне замовлення: 1200 шт
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| NZT45H8 |
|
Виробник: onsemi
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Description: TRANS PNP 60V 8A SOT223-4
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
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| FQD30N06LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 24A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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| FQB13N10LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 12.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 12.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FQD14N15TM |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FQD9N25TF |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FQD9N25TM |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FQD6N40CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 4.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 400V 4.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 36.26 грн |
| 5000+ | 33.34 грн |
| 7500+ | 33.01 грн |
| NZT44H8 |
|
Виробник: onsemi
Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| FQI1P50TU |
Виробник: onsemi
Description: MOSFET P-CH 500V 1.5A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET P-CH 500V 1.5A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| FQB1P50TM |
|
Виробник: onsemi
Description: MOSFET P-CH 500V 1.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 500V 1.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 750mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FQB13N06LTM |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 60V 13.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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Мінімальне замовлення: 800 шт
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| FYP2004DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 150°C
Description: DIODE ARRAY SCHOTTKY 40V TO220
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature - Junction: -65°C ~ 150°C
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| FQPF5N50C |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 500V 5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| FSA5157P6X |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 1 360MOHM SC88
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: SC-88 (SC-70-6)
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPDT X 1 360MOHM SC88
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: SC-88 (SC-70-6)
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 16.31 грн |
| 6000+ | 15.29 грн |
| 9000+ | 15.09 грн |
| 15000+ | 13.94 грн |
| FIN1001M5 |
|
Виробник: onsemi
Description: IC DRIVER 1/0 SOT23-5
Description: IC DRIVER 1/0 SOT23-5
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| FIN1002M5 |
|
Виробник: onsemi
Description: IC RECEIVER 0/1 SOT23-5
Description: IC RECEIVER 0/1 SOT23-5
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| FSA5157L6X |
|
Виробник: onsemi
Description: IC SW SPDTX1 360MOHM 6MICROPAK
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-MicroPak
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC SW SPDTX1 360MOHM 6MICROPAK
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-MicroPak
-3db Bandwidth: 80MHz
On-State Resistance (Max): 360mOhm (Typ)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 14.36 грн |
| 10000+ | 12.72 грн |
| 15000+ | 12.16 грн |
| FQD3N60TM |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FIN1002M5X |
|
Виробник: onsemi
Description: IC TRANSCEIVER 0/1 SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC TRANSCEIVER 0/1 SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 20.99 грн |
| KA337 |
|
Виробник: onsemi
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Output Configuration: Negative
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Bulk
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Output Configuration: Negative
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Bulk
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Мінімальне замовлення: 1200 шт
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| KA337TU |
|
Виробник: onsemi
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Output Configuration: Negative
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Tube
Description: IC REG LIN NEG ADJ 1.5A TO220-3
Output Configuration: Negative
Protection Features: Over Temperature, Short Circuit
PSRR: 60dB (120Hz)
Voltage - Output (Min/Fixed): -1.2V
Voltage - Output (Max): -37V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -40V
Operating Temperature: 0°C ~ 125°C
Current - Output: 1.5A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-3
Packaging: Tube
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| FQU2N100TU |
|
Виробник: onsemi
Description: MOSFET N-CH 1000V 1.6A IPAK
Description: MOSFET N-CH 1000V 1.6A IPAK
на замовлення 1608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 114.97 грн |
| 10+ | 98.65 грн |
| 100+ | 76.91 грн |
| 500+ | 59.63 грн |
| 1000+ | 47.07 грн |
| FIN1001M5X |
|
Виробник: onsemi
Description: IC TRANSCEIVER 1/0 SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
Description: IC TRANSCEIVER 1/0 SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 600Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| HUFA76409D3 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 60V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| HUFA75309D3 |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 19A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description: MOSFET N-CH 55V 19A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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| FQD6P25TM |
|
Виробник: onsemi
Description: MOSFET P-CH 250V 4.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 250V 4.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| FYPF2045DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 45V TO220F
Description: DIODE ARRAY SCHOTTKY 45V TO220F
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