| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CNY173SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Case: Gull wing 6 Insulation voltage: 4.17kV Manufacturer series: CNY17 Turn-on time: 2µs Turn-off time: 3µs CTR@If: 100-200%@10mA |
на замовлення 1790 шт: термін постачання 21-30 дні (днів) |
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KSD1691GS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 200...400 Polarisation: bipolar Kind of package: bulk Type of transistor: NPN |
на замовлення 1989 шт: термін постачання 21-30 дні (днів) |
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| KSD1691GSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 200...400 Polarisation: bipolar Kind of package: tube Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KSD1691YS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 160...320 Polarisation: bipolar Kind of package: bulk Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KSD1691YSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 160...320 Polarisation: bipolar Kind of package: tube Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSD1616AGBU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Case: TO92 Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 60V Current gain: 200...400 Frequency: 160MHz Kind of package: bulk Polarisation: bipolar |
на замовлення 6575 шт: термін постачання 21-30 дні (днів) |
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KSD1616AGTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Case: TO92 Formed Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 200...400 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSD1616AYTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Case: TO92 Type of transistor: NPN Mounting: THT Power dissipation: 0.75W Collector current: 1A Collector-emitter voltage: 60V Current gain: 135...270 Frequency: 160MHz Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| KSD880YTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Collector-emitter voltage: 60V Current gain: 100...200 Polarisation: bipolar Frequency: 3MHz Type of transistor: NPN Collector current: 3A Power dissipation: 30W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSA928AYTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 2A Collector-emitter voltage: 30V Current gain: 160...320 Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSC2383OTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 1991 шт: термін постачання 21-30 дні (днів) |
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KSC1008CYTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Case: TO92 Formed Type of transistor: NPN Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: Ammo Pack Polarisation: bipolar |
на замовлення 1505 шт: термін постачання 21-30 дні (днів) |
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KSC1008YBU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Type of transistor: NPN Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: bulk Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSC1008YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Case: TO92 Formed Type of transistor: NPN Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: Ammo Pack Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7002 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 71484 шт: термін постачання 21-30 дні (днів) |
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NTHL075N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHC1G09DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Case: TSSOP5 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: open drain Technology: CMOS Number of inputs: 2 Kind of gate: AND Family: VHC Quiescent current: 40µA |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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NLSV1T34DFT2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Case: SOT353 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 2µA Supply voltage: 0.9...4.5V DC |
на замовлення 958 шт: термін постачання 21-30 дні (днів) |
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1N4448 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 4A Power dissipation: 0.5W |
на замовлення 2006 шт: термін постачання 21-30 дні (днів) |
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1N5401G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 459 шт: термін постачання 21-30 дні (днів) |
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4N25M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V Mounting: THT Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 20%@10mA Insulation voltage: 0.85kV Case: DIP6 Type of optocoupler: optocoupler Kind of output: transistor Turn-off time: 2µs Turn-on time: 2µs |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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1N4004G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Case: CASE59 Mounting: THT Quantity in set/package: 1000pcs. Kind of package: bulk Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.1V Type of diode: rectifying Max. forward impulse current: 30A Max. off-state voltage: 0.4kV |
на замовлення 2149 шт: термін постачання 21-30 дні (днів) |
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| 6N136VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Max. off-state voltage: 5V Number of pins: 8 Manufacturer series: 6N136M |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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1N4006G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 1675 шт: термін постачання 21-30 дні (днів) |
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MC74ACT139DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: TTL Mounting: SMD Case: SOIC16 Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Manufacturer series: ACT |
на замовлення 219 шт: термін постачання 21-30 дні (днів) |
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6N137SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 30ns Manufacturer series: 6N137M |
на замовлення 1279 шт: термін постачання 21-30 дні (днів) |
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FQD8P10TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1218 шт: термін постачання 21-30 дні (днів) |
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DTA115EET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| 6N136SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSA1298YMTF | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.8A Power dissipation: 0.2W Case: SOT23; TO236AB Current gain: 100...320 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
на замовлення 1887 шт: термін постачання 21-30 дні (днів) |
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FXMA2104UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Case: MLP12 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 4 Number of inputs: 4 Frequency: 26MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
на замовлення 3647 шт: термін постачання 21-30 дні (днів) |
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1N4005G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Quantity in set/package: 1000pcs. Kind of package: bulk Case: CASE59 |
на замовлення 2405 шт: термін постачання 21-30 дні (днів) |
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| FSUSB242GEVB | ONSEMI |
Category: Unclassified Description: FSUSB242GEVB |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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UF4007 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Power dissipation: 2.08W Leakage current: 75µA Capacitance: 17pF |
на замовлення 1647 шт: термін постачання 21-30 дні (днів) |
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| FGH40N60SMD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 119nC Kind of package: tube Collector current: 40A Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Collector current: 40A Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGAF40N60UFTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 77nC Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 160A Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGB20N60SFD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Version: ESD Application: ignition systems Features of semiconductor devices: logic level Gate charge: 63nC Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGA40N65SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 174W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 174W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH60T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH60T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 79nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGA40T65SHD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO3P Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 72.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FGB40T65SPD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level Application: ignition systems Case: D2PAK Version: ESD Mounting: SMD Type of transistor: IGBT Features of semiconductor devices: logic level Gate charge: 36nC Power dissipation: 134W Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Collector-emitter voltage: 650V Kind of package: reel; tape |
на замовлення 753 шт: термін постачання 21-30 дні (днів) |
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| FGH40T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72.2nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SHDF-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 68nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH40T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL40T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 86nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL40T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 80nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TL431ACDG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: tube Maximum output current: 0.1A Operating voltage: 2.495...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TL431ACDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Maximum output current: 0.1A Operating voltage: 2.495...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TL431ACLPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TL431ACLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SS36 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
на замовлення 1904 шт: термін постачання 21-30 дні (днів) |
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| TL431BCDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TL431BCLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
TL431BILPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FAN3100TSX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -2.5...1.8A Impulse rise time: 20ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 14ns Kind of output: non-inverting Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD |
на замовлення 1935 шт: термін постачання 21-30 дні (днів) |
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| FGH40T120SQDNL4 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 227W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 221nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL40T120RWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 174nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGHL40T120SWD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 118nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| CNY173SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Case: Gull wing 6
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Turn-on time: 2µs
Turn-off time: 3µs
CTR@If: 100-200%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Case: Gull wing 6
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Turn-on time: 2µs
Turn-off time: 3µs
CTR@If: 100-200%@10mA
на замовлення 1790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.46 грн |
| 16+ | 25.55 грн |
| 40+ | 23.97 грн |
| 50+ | 21.82 грн |
| KSD1691GS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.87 грн |
| 6+ | 69.84 грн |
| 10+ | 60.71 грн |
| 25+ | 49.92 грн |
| 100+ | 37.78 грн |
| 500+ | 33.49 грн |
| KSD1691GSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
товару немає в наявності
В кошику
од. на суму грн.
| KSD1691YS |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
товару немає в наявності
В кошику
од. на суму грн.
| KSD1691YSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
товару немає в наявності
В кошику
од. на суму грн.
| KSD1616AGBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
на замовлення 6575 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.77 грн |
| 18+ | 22.22 грн |
| 22+ | 18.17 грн |
| 100+ | 8.25 грн |
| 1000+ | 7.22 грн |
| KSD1616AGTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| KSD1616AYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| KSD880YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
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В кошику
од. на суму грн.
| KSA928AYTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
товару немає в наявності
В кошику
од. на суму грн.
| KSC2383OTA |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1991 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.19 грн |
| 16+ | 24.92 грн |
| 83+ | 11.35 грн |
| 227+ | 10.71 грн |
| KSC1008CYTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
на замовлення 1505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.22 грн |
| 29+ | 14.05 грн |
| 36+ | 11.03 грн |
| 100+ | 7.46 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.68 грн |
| KSC1008YBU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| KSC1008YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| 2N7002 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 71484 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.20 грн |
| 22+ | 18.57 грн |
| 26+ | 15.71 грн |
| 50+ | 11.19 грн |
| 100+ | 9.92 грн |
| 500+ | 8.09 грн |
| 1000+ | 7.62 грн |
| 1500+ | 7.38 грн |
| 3000+ | 7.14 грн |
| NTHL075N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MC74VHC1G09DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
Quiescent current: 40µA
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.55 грн |
| 60+ | 6.67 грн |
| 100+ | 6.35 грн |
| 250+ | 5.87 грн |
| 500+ | 5.63 грн |
| NLSV1T34DFT2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
на замовлення 958 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.41 грн |
| 10+ | 42.22 грн |
| 25+ | 36.66 грн |
| 29+ | 32.46 грн |
| 80+ | 30.71 грн |
| 500+ | 29.52 грн |
| 1N4448 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
на замовлення 2006 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 143+ | 2.78 грн |
| 197+ | 2.02 грн |
| 250+ | 1.74 грн |
| 500+ | 1.53 грн |
| 1000+ | 1.33 грн |
| 2000+ | 1.10 грн |
| 1N5401G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 459 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.22 грн |
| 28+ | 14.36 грн |
| 100+ | 10.16 грн |
| 4N25M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
на замовлення 186 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.33 грн |
| 17+ | 24.52 грн |
| 50+ | 19.52 грн |
| 100+ | 17.54 грн |
| 1N4004G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Mounting: THT
Quantity in set/package: 1000pcs.
Kind of package: bulk
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Mounting: THT
Quantity in set/package: 1000pcs.
Kind of package: bulk
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
на замовлення 2149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 68+ | 5.87 грн |
| 81+ | 4.92 грн |
| 135+ | 2.94 грн |
| 500+ | 2.58 грн |
| 6N136VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
на замовлення 284 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 171.78 грн |
| 200+ | 139.67 грн |
| 1N4006G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 1675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.26 грн |
| 62+ | 6.43 грн |
| 100+ | 4.27 грн |
| 288+ | 3.25 грн |
| 791+ | 3.06 грн |
| 1000+ | 2.95 грн |
| MC74ACT139DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: ACT
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: ACT
на замовлення 219 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.76 грн |
| 11+ | 38.89 грн |
| 48+ | 31.59 грн |
| 96+ | 28.89 грн |
| 144+ | 27.38 грн |
| 6N137SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
на замовлення 1279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.92 грн |
| 10+ | 52.14 грн |
| 25+ | 47.62 грн |
| 50+ | 44.28 грн |
| 100+ | 41.03 грн |
| 500+ | 40.00 грн |
| FQD8P10TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1218 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.65 грн |
| 8+ | 52.38 грн |
| 10+ | 45.71 грн |
| 50+ | 33.41 грн |
| 100+ | 29.36 грн |
| 500+ | 24.84 грн |
| DTA115EET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.11 грн |
| 61+ | 6.59 грн |
| 100+ | 3.99 грн |
| 500+ | 2.88 грн |
| 1000+ | 2.52 грн |
| 3000+ | 2.18 грн |
| 6N136SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| KSA1298YMTF |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
на замовлення 1887 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.67 грн |
| 45+ | 8.97 грн |
| 100+ | 5.08 грн |
| 394+ | 2.38 грн |
| 1082+ | 2.25 грн |
| FXMA2104UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
на замовлення 3647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 39.76 грн |
| 1N4005G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
на замовлення 2405 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.40 грн |
| 54+ | 7.46 грн |
| 60+ | 6.67 грн |
| 72+ | 5.56 грн |
| 100+ | 4.23 грн |
| 350+ | 2.67 грн |
| 961+ | 2.52 грн |
| FSUSB242GEVB |
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9395.18 грн |
| UF4007 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
на замовлення 1647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.37 грн |
| 26+ | 15.40 грн |
| 30+ | 13.49 грн |
| 100+ | 8.81 грн |
| 250+ | 7.54 грн |
| 500+ | 6.75 грн |
| 1000+ | 6.67 грн |
| FGH40N60SMD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| FGAF40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| FGAF40N60UFTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| FGB20N60SFD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
товару немає в наявності
В кошику
од. на суму грн.
| FGA40N65SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| FGH60T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| FGH60T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
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| FGA40T65SHD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
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| FGB40T65SPD-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Application: ignition systems
Case: D2PAK
Version: ESD
Mounting: SMD
Type of transistor: IGBT
Features of semiconductor devices: logic level
Gate charge: 36nC
Power dissipation: 134W
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Application: ignition systems
Case: D2PAK
Version: ESD
Mounting: SMD
Type of transistor: IGBT
Features of semiconductor devices: logic level
Gate charge: 36nC
Power dissipation: 134W
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Kind of package: reel; tape
на замовлення 753 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 357.24 грн |
| 5+ | 289.67 грн |
| 10+ | 261.10 грн |
| 25+ | 221.42 грн |
| 100+ | 211.10 грн |
| FGH40T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
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| FGH40T65SHDF-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
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| FGH40T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
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| FGHL40T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
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| FGHL40T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
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| TL431ACDG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
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| TL431ACDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
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| TL431ACLPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431ACLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| SS36 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
на замовлення 1904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.48 грн |
| 15+ | 27.54 грн |
| 50+ | 22.70 грн |
| 100+ | 20.63 грн |
| 250+ | 19.44 грн |
| TL431BCDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| TL431BCLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| TL431BILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| FAN3100TSX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
на замовлення 1935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.77 грн |
| 10+ | 58.33 грн |
| 25+ | 50.39 грн |
| 100+ | 39.76 грн |
| 250+ | 38.73 грн |
| FGH40T120SQDNL4 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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| FGHL40T120RWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
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| FGHL40T120SWD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
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