| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| RS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Case: SOD123F Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 0.8A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1JFP | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Case: SOD123HE Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 300ns Load current: 1.2A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVHPRS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Max. forward impulse current: 30A Application: automotive industry Case: SOD123F Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 0.8A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| KSD880YTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Collector-emitter voltage: 60V Current gain: 100...200 Polarisation: bipolar Frequency: 3MHz Type of transistor: NPN Collector current: 3A Power dissipation: 30W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FGH40T120SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 60A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 240A Mounting: THT Gate charge: 311nC Kind of package: tube |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 395W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 399nC Kind of package: tube |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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FQPF3N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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FQP3N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 107W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSVBC847BTT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SB1201S-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.8W Collector current: 2A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14027BDR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 3...18V DC Kind of integrated circuit: JK flip-flop Type of integrated circuit: digital Number of channels: 2 Trigger: negative-edge-triggered |
на замовлення 2183 шт: термін постачання 14-30 дні (днів) |
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| NVLJWS022N06CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6 Case: WDFNW6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.6nC On-state resistance: 21mΩ Power dissipation: 14W Drain current: 25A Pulsed drain current: 90A Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSA1013YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Case: TO92 Formed Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: Ammo Pack Type of transistor: PNP |
на замовлення 3522 шт: термін постачання 14-30 дні (днів) |
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KSA1013YBU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Mounting: THT Case: TO92 Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: bulk Type of transistor: PNP |
на замовлення 5878 шт: термін постачання 14-30 дні (днів) |
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| DTC144TET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...300 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BZX85C12-T50R | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX85C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5380BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 120V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AA Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 801 шт: термін постачання 14-30 дні (днів) |
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| 1N5380BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 120V Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: CASE017AA Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Kind of package: tube Kind of voltage regulator: fixed; linear Mounting: THT Case: TO220AB Operating temperature: 0...125°C Output voltage: -18V Heatsink thickness: 0.508...0.61mm Output current: 1A Voltage drop: 1.3V Number of channels: 1 Tolerance: ±4% Type of integrated circuit: voltage regulator Manufacturer series: MC7900 |
на замовлення 2409 шт: термін постачання 14-30 дні (днів) |
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| BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
на замовлення 1925 шт: термін постачання 14-30 дні (днів) |
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MC33079DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 16MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 5...18V DC; 10...36V DC Case: SO14 Operating temperature: -40...85°C Integrated circuit features: low noise Kind of package: reel; tape Input offset voltage: 3.5mV Slew rate: 7V/μs |
на замовлення 3686 шт: термін постачання 14-30 дні (днів) |
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MC33074DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 3mV Kind of package: reel; tape |
на замовлення 770 шт: термін постачання 14-30 дні (днів) |
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| MC33035DWR2G | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brushless motor controller Case: SO24 Output current: 0.1A Number of channels: 3 Supply voltage: 0...40V DC Mounting: SMD Operating temperature: -40...85°C Application: universal Operating voltage: 10...30V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJH11022G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 146 шт: термін постачання 14-30 дні (днів) |
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MJH11020G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Kind of package: tube Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 200V Polarisation: bipolar |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: PNP Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 173 шт: термін постачання 14-30 дні (днів) |
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74AC04SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 1 Kind of package: tube Family: AC Type of integrated circuit: digital Number of channels: hex; 6 Kind of gate: NOT Case: SO14 |
на замовлення 420 шт: термін постачання 14-30 дні (днів) |
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MM74HCT74M | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Manufacturer series: HCT |
на замовлення 133 шт: термін постачання 14-30 дні (днів) |
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| FCD380N60E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCP380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCPF380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCPF380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAV70LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33151DG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP Output voltage: 0.8...11.2V |
на замовлення 135 шт: термін постачання 14-30 дні (днів) |
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MC33151PG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Protection: undervoltage UVP Output voltage: 0.8...11.2V Kind of output: inverting |
на замовлення 77 шт: термін постачання 14-30 дні (днів) |
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MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Supply voltage: 6.5...18V DC Output voltage: 0.8...11.2V Kind of package: reel; tape Protection: undervoltage UVP Kind of output: inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC34151DG | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Supply voltage: 6.5...18V DC Kind of output: inverting Output voltage: 0.8...11.2V Kind of package: tube Protection: undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5404RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27 Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: reel; tape |
на замовлення 1127 шт: термін постачання 14-30 дні (днів) |
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MOCD223M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 8µs Turn-off time: 55µs |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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MBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MCT9001 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Case: DIP8 Mounting: THT Kind of output: transistor Type of optocoupler: optocoupler Number of channels: 2 CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Insulation voltage: 5kV |
на замовлення 892 шт: термін постачання 14-30 дні (днів) |
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MCT9001SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8 Case: PDIP8 Mounting: SMD Kind of output: transistor Type of optocoupler: optocoupler Turn-on time: 3µs Turn-off time: 3µs Number of channels: 2 Max. off-state voltage: 5V CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Insulation voltage: 5kV Manufacturer series: MCT9001 |
на замовлення 669 шт: термін постачання 14-30 дні (днів) |
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FQD5P20TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1103 шт: термін постачання 14-30 дні (днів) |
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| BAT54S | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC390ADR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC390ADTR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5 Number of channels: 2 Number of inputs: 3 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT161DG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Family: ACT Number of inputs: 9 Kind of package: tube |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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MC74ACT273DWG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; ACT; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: ACT Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered |
на замовлення 138 шт: термін постачання 14-30 дні (днів) |
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74ACT240MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of integrated circuit: buffer; inverting; line driver Technology: CMOS Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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| 74VHCT240AMTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: VHCT Operating temperature: -40...85°C Manufacturer series: VHCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HCT240MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Technology: CMOS; TTL Quiescent current: 160µA Number of channels: 2 Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74ACT157DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube Operating temperature: -40...85°C Manufacturer series: ACT Technology: TTL Type of integrated circuit: digital Kind of package: tube Mounting: SMD Case: SOIC16 Number of channels: 4 Supply voltage: 4.5...5.5V DC Number of inputs: 4 Family: ACT Kind of integrated circuit: multiplexer |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
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| RS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| RS1JFP |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| NRVHPRS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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В кошику
од. на суму грн.
| KSD880YTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
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| FGH40T120SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 188 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 633.58 грн |
| 10+ | 506.92 грн |
| FGY60T120SQDN |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 649.85 грн |
| FGY75T120SQDN |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
на замовлення 33 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 755.60 грн |
| FGH40T120SMD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 877.61 грн |
| FQPF3N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 127.44 грн |
| FQP3N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
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| NSVBC847BTT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| 2SB1201S-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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од. на суму грн.
| MC14027BDR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
на замовлення 2183 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.15 грн |
| 16+ | 27.36 грн |
| 18+ | 24.59 грн |
| 25+ | 21.40 грн |
| 50+ | 19.47 грн |
| 100+ | 17.96 грн |
| 200+ | 16.79 грн |
| 250+ | 16.45 грн |
| 500+ | 15.61 грн |
| NVLJWS022N06CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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| KSA1013YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
на замовлення 3522 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.38 грн |
| 18+ | 24.67 грн |
| 100+ | 14.27 грн |
| 250+ | 11.92 грн |
| 500+ | 11.67 грн |
| KSA1013YBU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
на замовлення 5878 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.10 грн |
| 13+ | 33.57 грн |
| 15+ | 28.79 грн |
| 100+ | 17.04 грн |
| 500+ | 13.43 грн |
| DTC144TET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
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| BZX85C12-T50R |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
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| 1N5380BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 801 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.50 грн |
| 24+ | 18.13 грн |
| 27+ | 15.95 грн |
| 32+ | 13.51 грн |
| 50+ | 12.59 грн |
| 1N5380BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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| MC7918CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
на замовлення 2409 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.29 грн |
| 15+ | 28.87 грн |
| 25+ | 23.00 грн |
| 50+ | 20.48 грн |
| 100+ | 19.39 грн |
| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
на замовлення 1925 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.69 грн |
| 30+ | 14.35 грн |
| 100+ | 8.32 грн |
| 500+ | 5.77 грн |
| 1000+ | 5.03 грн |
| MC33079DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Input offset voltage: 3.5mV
Slew rate: 7V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Input offset voltage: 3.5mV
Slew rate: 7V/μs
на замовлення 3686 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.69 грн |
| 27+ | 15.69 грн |
| 30+ | 14.27 грн |
| 100+ | 12.34 грн |
| 250+ | 11.58 грн |
| 500+ | 11.08 грн |
| 1000+ | 10.99 грн |
| MC33074DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
на замовлення 770 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.96 грн |
| 13+ | 34.41 грн |
| 16+ | 26.35 грн |
| 25+ | 25.85 грн |
| MC33035DWR2G |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
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| MC33074ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074ADTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MJH11022G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 146 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 270.24 грн |
| 3+ | 248.42 грн |
| 10+ | 206.46 грн |
| 20+ | 204.78 грн |
| MJH11020G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
на замовлення 23 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 396.78 грн |
| MJH11021G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 173 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 288.71 грн |
| 10+ | 257.65 грн |
| 74AC04SC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Family: AC
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Case: SO14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Family: AC
Type of integrated circuit: digital
Number of channels: hex; 6
Kind of gate: NOT
Case: SO14
на замовлення 420 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.15 грн |
| 18+ | 23.92 грн |
| 25+ | 20.65 грн |
| 55+ | 18.72 грн |
| 110+ | 17.54 грн |
| 275+ | 16.53 грн |
| MM74HCT74M |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: HCT
на замовлення 133 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.31 грн |
| 19+ | 22.66 грн |
| FCD380N60E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FCP380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCP380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| NTD280N60S5Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCPF380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| BAV70LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
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| MC33151DG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
на замовлення 135 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.09 грн |
| 10+ | 63.78 грн |
| 25+ | 58.75 грн |
| MC33151PG | ![]() |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of output: inverting
на замовлення 77 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.06 грн |
| 10+ | 65.46 грн |
| MC33151DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of output: inverting
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| MC34151DG | ![]() |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Output voltage: 0.8...11.2V
Kind of package: tube
Protection: undervoltage UVP
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Output voltage: 0.8...11.2V
Kind of package: tube
Protection: undervoltage UVP
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| 1N5404RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: reel; tape
на замовлення 1127 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 38+ | 11.33 грн |
| 50+ | 9.74 грн |
| 100+ | 8.98 грн |
| 200+ | 8.31 грн |
| 500+ | 8.22 грн |
| MOCD223M | ![]() |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
на замовлення 53 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.69 грн |
| 13+ | 34.75 грн |
| 25+ | 31.98 грн |
| 30+ | 31.39 грн |
| 50+ | 29.88 грн |
| MBRB20200CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
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| MCT9001 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
на замовлення 892 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 56.04 грн |
| 11+ | 40.12 грн |
| 25+ | 30.97 грн |
| 50+ | 24.67 грн |
| 100+ | 19.97 грн |
| 250+ | 18.55 грн |
| MCT9001SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Case: PDIP8
Mounting: SMD
Kind of output: transistor
Type of optocoupler: optocoupler
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
Manufacturer series: MCT9001
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Case: PDIP8
Mounting: SMD
Kind of output: transistor
Type of optocoupler: optocoupler
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
Manufacturer series: MCT9001
на замовлення 669 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.50 грн |
| 10+ | 45.32 грн |
| 100+ | 36.26 грн |
| FQD5P20TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1103 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.10 грн |
| 14+ | 31.05 грн |
| 100+ | 28.87 грн |
| 500+ | 28.20 грн |
| BAT54S |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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| MC74HC390ADR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
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| MC74HC390ADTR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
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| MC74ACT161DG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 9
Kind of package: tube
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 9
Kind of package: tube
на замовлення 73 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.15 грн |
| 14+ | 30.80 грн |
| 15+ | 28.45 грн |
| 25+ | 27.61 грн |
| 48+ | 26.77 грн |
| MC74ACT273DWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; ACT; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: ACT
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
на замовлення 138 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.63 грн |
| 10+ | 72.26 грн |
| 25+ | 60.93 грн |
| 38+ | 56.57 грн |
| 114+ | 47.17 грн |
| 74ACT240MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
на замовлення 140 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.52 грн |
| 10+ | 56.23 грн |
| 25+ | 46.66 грн |
| 50+ | 40.87 грн |
| 75+ | 38.02 грн |
| 74VHCT240AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Operating temperature: -40...85°C
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Operating temperature: -40...85°C
Manufacturer series: VHCT
товару немає в наявності
В кошику
од. на суму грн.
| MM74HCT240MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
товару немає в наявності
В кошику
од. на суму грн.
| MC74ACT157DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Technology: TTL
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Case: SOIC16
Number of channels: 4
Supply voltage: 4.5...5.5V DC
Number of inputs: 4
Family: ACT
Kind of integrated circuit: multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Technology: TTL
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Case: SOIC16
Number of channels: 4
Supply voltage: 4.5...5.5V DC
Number of inputs: 4
Family: ACT
Kind of integrated circuit: multiplexer
на замовлення 238 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.67 грн |



























