| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| MSD1819A-RT1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.1A; 0.15W; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Current gain: 210...340 Polarisation: bipolar Type of transistor: NPN |
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В кошику од. на суму грн. | |||||||||||||||||
| NVTYS003N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 106A Pulsed drain current: 498A Power dissipation: 34W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVTFS003N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 103A Pulsed drain current: 484A Power dissipation: 22W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVTYS003N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 99A Pulsed drain current: 465A Power dissipation: 34W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| NVTFWS003N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 103A Pulsed drain current: 484A Power dissipation: 22W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
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BZX79C4V7 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: THT Tolerance: ±5% Case: CASE017AG Kind of package: bulk Semiconductor structure: single diode Manufacturer series: BZX79C |
на замовлення 335 шт: термін постачання 14-30 дні (днів) |
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| MMSZ51T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 51V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 51V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N457 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 70V; 0.2A; reel,tape; Ifsm: 4A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 |
на замовлення 1124 шт: термін постачання 14-30 дні (днів) |
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1N457A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 70V; 0.2A; bulk; Ifsm: 4A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: bulk Max. forward impulse current: 4A Case: DO35 |
на замовлення 4970 шт: термін постачання 14-30 дні (днів) |
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| 1N457TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 70V; 0.2A; reel,tape; Ifsm: 4A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDMA1028NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET Mounting: SMD Power dissipation: 1.4W Gate charge: 6nC Polarisation: unipolar Technology: PowerTrench® Drain current: 3.7A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape Case: MicroFET On-state resistance: 90mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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H11N1SM | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 4.17kV; Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Case: Gull wing 6 Turn-on time: 0.1µs Turn-off time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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H11N1SVM | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 4.17kV; Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Case: Gull wing 6 Turn-on time: 0.1µs Turn-off time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUN5212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Current gain: 60...100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMUN5212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBZ5257BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G |
на замовлення 35373 шт: термін постачання 14-30 дні (днів) |
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| SZMMBZ5257BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMBZ52xxBLT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSVDTA123EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Application: automotive industry Quantity in set/package: 8000pcs. |
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В кошику од. на суму грн. | |||||||||||||||||
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NCV7321D12R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape Type of integrated circuit: interface Kind of integrated circuit: transceiver Case: SOIC8 Supply voltage: 5...27V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Interface: LIN Application: automotive industry |
на замовлення 2977 шт: термін постачання 14-30 дні (днів) |
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MMSZ47T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 47V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| N24S64C4DYT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 3.5µs Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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SMF12CT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; ESD; SC88; Ch: 5 Mounting: SMD Type of diode: TVS array Leakage current: 0.1µA Max. forward impulse current: 6A Number of channels: 5 Max. off-state voltage: 12V Breakdown voltage: 13.3...15V Peak pulse power dissipation: 0.1kW Kind of package: reel; tape Semiconductor structure: common anode Case: SC88 Version: ESD |
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В кошику од. на суму грн. | ||||||||||||||||
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DF005S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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| SZMMSZ13T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZMMSZ13ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C18LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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MC74ACT259DR2G | ONSEMI |
Category: Latches Description: IC: digital; 8bit,latch; Ch: 8; IN: 5; TTL; 4.5÷5.5VDC; SMD; SOIC16 Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Operating temperature: -40...85°C Kind of integrated circuit: 8bit; latch Number of channels: 8 Mounting: SMD Type of integrated circuit: digital Technology: TTL Number of inputs: 5 Kind of package: reel; tape Case: SOIC16 Family: ACT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BC808-25LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| MM5Z5V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5Z |
на замовлення 675 шт: термін постачання 14-30 дні (днів) |
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MM5Z5V6ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxST1G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SZMM5Z5V6ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxST1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZMM5Z5V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NL27WZ17DFT2G-L22348 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SC88A Operating temperature: -55...125°C Number of channels: 2 Kind of input: with Schmitt trigger Supply voltage: 1.65...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| NL27WZ17DFT2G-L22348 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; IN: 2; SMD; SC70-6; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of inputs: 2 Mounting: SMD Case: SC70-6 Operating temperature: -55...125°C Kind of output: push-pull Family: LCX Number of outputs: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| MM3Z3V9C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3Z |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC3506 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
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В кошику од. на суму грн. | |||||||||||||||||
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FSL176MRTUDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220-6U Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 1.6Ω Duty cycle factor: 61...73% Power: 70W Operating voltage: 7.5...24.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NXH030F120M3F1PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 38A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 68.2mΩ Pulsed drain current: 115A Power dissipation: 100W Technology: SiC Gate-source voltage: -10...22V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 28 шт В кошику од. на суму грн. | |||||||||||||||||
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BSP52T1G | ONSEMI |
 Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSP52T3G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBSP52T1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||
| NVBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -3...18V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMSZ4702T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Manufacturer series: MMSZ4xxTxG Mounting: SMD Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTD360N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTPF360N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 25.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD112G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSL337LRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1 Operating voltage: 7...24.5V DC Case: DIP7 Mounting: THT Operating temperature: -40...125°C Application: SMPS Type of integrated circuit: PMIC Number of channels: 1 Output current: 1.8A Topology: buck; buck-boost; flyback On-state resistance: 4.75Ω Power: 9/20W Kind of integrated circuit: AC/DC switcher; PWM controller Duty cycle factor: 61...73% Input voltage: 85...265V Output voltage: 700V Frequency: 50kHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSA4157P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1 Type of integrated circuit: analog switch Mounting: SMD Output configuration: SPDT Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of channels: 1 Number of inputs: 1 Number of outputs: 2 Case: SC70-6; SC88; SOT363 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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NLHV4157NDFT2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: SPDT; switch Technology: CMOS Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: -12...-4V DC Number of channels: 1 Number of inputs: 2 Case: SC88 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
 |
1N4149 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 4598 шт: термін постачання 14-30 дні (днів) |
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1N4149TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 50µA Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 7495 шт: термін постачання 14-30 дні (днів) |
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| NTBLS001N06C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 422A Pulsed drain current: 900A Power dissipation: 284W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| NIS5132MN2TXG | ONSEMI |
Category: Power switches - integrated circuits Description: NIS5132MN2TXG |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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 |
MMBTA06 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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SMMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMMBTA06WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMMBTA06WT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FAN3181TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOIC8 Output current: -2...1.5A Number of channels: 1 Supply voltage: 25V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
BD136G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| MSD1819A-RT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.15W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 210...340
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.15W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 210...340
Polarisation: bipolar
Type of transistor: NPN
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В кошику
од. на суму грн.
| NVTYS003N04CLTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 498A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 498A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| NVTFS003N04CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| NVTYS003N04CTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 99A
Pulsed drain current: 465A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 99A
Pulsed drain current: 465A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NVTFWS003N04CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| BZX79C4V7 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
на замовлення 335 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 60+ | 6.92 грн |
| 73+ | 5.68 грн |
| 138+ | 2.99 грн |
| 250+ | 2.55 грн |
| MMSZ51T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 51V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 51V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
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од. на суму грн.
| 1N457 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 70V; 0.2A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 70V; 0.2A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
на замовлення 1124 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 68+ | 6.09 грн |
| 76+ | 5.44 грн |
| 112+ | 3.68 грн |
| 250+ | 3.20 грн |
| 500+ | 3.09 грн |
| 1N457A |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 70V; 0.2A; bulk; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 70V; 0.2A; bulk; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
на замовлення 4970 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 81+ | 5.11 грн |
| 118+ | 3.49 грн |
| 500+ | 2.68 грн |
| 1000+ | 2.39 грн |
| 2000+ | 2.13 грн |
| 2500+ | 2.06 грн |
| 1N457TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 70V; 0.2A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 70V; 0.2A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
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В кошику
од. на суму грн.
| FDMA1028NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Mounting: SMD
Power dissipation: 1.4W
Gate charge: 6nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 90mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Mounting: SMD
Power dissipation: 1.4W
Gate charge: 6nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 90mΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| H11N1SM |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 4.17kV; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: Gull wing 6
Turn-on time: 0.1µs
Turn-off time: 150ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 4.17kV; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: Gull wing 6
Turn-on time: 0.1µs
Turn-off time: 150ns
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| H11N1SVM |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 4.17kV; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: Gull wing 6
Turn-on time: 0.1µs
Turn-off time: 150ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 4.17kV; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: Gull wing 6
Turn-on time: 0.1µs
Turn-off time: 150ns
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| MUN5212T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
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| SMUN5212T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
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| MMBZ5257BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
на замовлення 35373 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.21 грн |
| 112+ | 3.71 грн |
| 156+ | 2.65 грн |
| 180+ | 2.29 грн |
| 1000+ | 1.44 грн |
| SZMMBZ5257BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
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| NSVDTA123EM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
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| NCV7321D12R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: SOIC8
Supply voltage: 5...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Interface: LIN
Application: automotive industry
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Case: SOIC8
Supply voltage: 5...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Interface: LIN
Application: automotive industry
на замовлення 2977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.56 грн |
| 13+ | 33.35 грн |
| 25+ | 28.17 грн |
| 100+ | 26.77 грн |
| MMSZ47T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 47V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 47V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
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| N24S64C4DYT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 3.5µs
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 3.5µs
Kind of package: reel; tape
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Мінімальне замовлення: 5000 шт
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| SMF12CT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; ESD; SC88; Ch: 5
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 6A
Number of channels: 5
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15V
Peak pulse power dissipation: 0.1kW
Kind of package: reel; tape
Semiconductor structure: common anode
Case: SC88
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; ESD; SC88; Ch: 5
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 6A
Number of channels: 5
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15V
Peak pulse power dissipation: 0.1kW
Kind of package: reel; tape
Semiconductor structure: common anode
Case: SC88
Version: ESD
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| DF005S |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.91 грн |
| SZMMSZ13T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| SZMMSZ13ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| BZX84C18LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 87+ | 4.78 грн |
| 141+ | 2.93 грн |
| 175+ | 2.36 грн |
| 250+ | 1.77 грн |
| 500+ | 1.48 грн |
| 1000+ | 1.28 грн |
| MC74ACT259DR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 8; IN: 5; TTL; 4.5÷5.5VDC; SMD; SOIC16
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of integrated circuit: 8bit; latch
Number of channels: 8
Mounting: SMD
Type of integrated circuit: digital
Technology: TTL
Number of inputs: 5
Kind of package: reel; tape
Case: SOIC16
Family: ACT
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 8; IN: 5; TTL; 4.5÷5.5VDC; SMD; SOIC16
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of integrated circuit: 8bit; latch
Number of channels: 8
Mounting: SMD
Type of integrated circuit: digital
Technology: TTL
Number of inputs: 5
Kind of package: reel; tape
Case: SOIC16
Family: ACT
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Мінімальне замовлення: 2500 шт
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| BC808-25LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 55+ | 7.49 грн |
| 83+ | 4.97 грн |
| 100+ | 4.13 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.43 грн |
| 1500+ | 2.26 грн |
| 3000+ | 2.02 грн |
| MM5Z5V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
на замовлення 675 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.32 грн |
| 105+ | 3.95 грн |
| 143+ | 2.90 грн |
| 220+ | 1.88 грн |
| MM5Z5V6ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
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| SZMM5Z5V6ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Application: automotive industry
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| SZMM5Z5V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| NL27WZ17DFT2G-L22348 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Number of channels: 2
Kind of input: with Schmitt trigger
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Number of channels: 2
Kind of input: with Schmitt trigger
Supply voltage: 1.65...5.5V DC
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Мінімальне замовлення: 3000 шт
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| NL27WZ17DFT2G-L22348 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; IN: 2; SMD; SC70-6; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of inputs: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -55...125°C
Kind of output: push-pull
Family: LCX
Number of outputs: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; IN: 2; SMD; SC70-6; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of inputs: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -55...125°C
Kind of output: push-pull
Family: LCX
Number of outputs: 2
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Мінімальне замовлення: 3000 шт
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| MM3Z3V9C |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3Z
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| GBPC3506 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| FSL176MRTUDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Duty cycle factor: 61...73%
Power: 70W
Operating voltage: 7.5...24.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Duty cycle factor: 61...73%
Power: 70W
Operating voltage: 7.5...24.5V DC
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| NXH030F120M3F1PTG |
|
Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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Мінімальне замовлення: 28 шт
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| BSP52T1G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| BSP52T3G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| SBSP52T1G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NTBG040N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Мінімальне замовлення: 800 шт
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| NVBG040N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: reel; tape
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| MMSZ4702T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
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| NTD360N80S3Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTPF360N80S3Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| NJVMJD112G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
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| FSL337LRN |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Operating voltage: 7...24.5V DC
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Application: SMPS
Type of integrated circuit: PMIC
Number of channels: 1
Output current: 1.8A
Topology: buck; buck-boost; flyback
On-state resistance: 4.75Ω
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
Duty cycle factor: 61...73%
Input voltage: 85...265V
Output voltage: 700V
Frequency: 50kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Operating voltage: 7...24.5V DC
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Application: SMPS
Type of integrated circuit: PMIC
Number of channels: 1
Output current: 1.8A
Topology: buck; buck-boost; flyback
On-state resistance: 4.75Ω
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
Duty cycle factor: 61...73%
Input voltage: 85...265V
Output voltage: 700V
Frequency: 50kHz
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| FSA4157P6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Type of integrated circuit: analog switch
Mounting: SMD
Output configuration: SPDT
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of channels: 1
Number of inputs: 1
Number of outputs: 2
Case: SC70-6; SC88; SOT363
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Type of integrated circuit: analog switch
Mounting: SMD
Output configuration: SPDT
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of channels: 1
Number of inputs: 1
Number of outputs: 2
Case: SC70-6; SC88; SOT363
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NLHV4157NDFT2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: SPDT; switch
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -12...-4V DC
Number of channels: 1
Number of inputs: 2
Case: SC88
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: SPDT; switch
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -12...-4V DC
Number of channels: 1
Number of inputs: 2
Case: SC88
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 1N4149 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 4598 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.43 грн |
| 152+ | 2.72 грн |
| 187+ | 2.21 грн |
| 250+ | 2.04 грн |
| 500+ | 1.78 грн |
| 1000+ | 1.56 грн |
| 1N4149TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 7495 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 100+ | 4.12 грн |
| 174+ | 2.37 грн |
| 250+ | 1.94 грн |
| 500+ | 1.68 грн |
| 1000+ | 1.47 грн |
| 2000+ | 1.28 грн |
| 5000+ | 1.10 грн |
| NTBLS001N06C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Power dissipation: 284W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Power dissipation: 284W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NIS5132MN2TXG |
|
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2750+ | 49.40 грн |
| MMBTA06 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10 шт
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| SMMBTA06LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| SMMBTA06WT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SMMBTA06WT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| FAN3181TMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -2...1.5A
Number of channels: 1
Supply voltage: 25V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -2...1.5A
Number of channels: 1
Supply voltage: 25V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
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| BD136G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
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