| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| MC100EP139DTR2G | ONSEMI |
 Category: Supervisor circuitsDescription: IC: digital; TSSOP20; 3÷5.5V; Ch: 1 Type of integrated circuit: digital Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 3...5.5V Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC100EP139DWG | ONSEMI |
Category: Supervisor circuits Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL Kind of input: differential Type of integrated circuit: digital Technology: ECL Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Supply voltage: 3...5.5V Number of outputs: 4 Number of channels: 1 Manufacturer series: 100EP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MUR420G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 125A; CASE267-05; bulk; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 125A Case: CASE267-05 Kind of package: bulk Max. forward voltage: 0.89V Reverse recovery time: 25ns |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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MUR420RLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 4A; Ifsm: 125A; CASE267-05; reel; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 125A Case: CASE267-05 Kind of package: reel Max. forward voltage: 0.89V Reverse recovery time: 25ns |
на замовлення 1514 шт: термін постачання 14-30 дні (днів) |
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TIP110G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523 Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9.6A Peak pulse power dissipation: 0.24kW Version: ESD Leakage current: 10nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD5Z6.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 6V Breakdown voltage: 6.8V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8.8A Peak pulse power dissipation: 0.181kW Version: ESD Leakage current: 10nA |
на замовлення 4036 шт: термін постачання 14-30 дні (днів) |
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BZX84C5V6 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C5V6LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
на замовлення 2568 шт: термін постачання 14-30 дні (днів) |
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BZX84C5V6ET3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C5V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C5V6ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1606ADR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| NCS20032DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Integrated circuit features: rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCS20032DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: Micro8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCS20032DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: TSSOP8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCS2003SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C18LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C18LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C18ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SD1803T-TL-H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK Frequency: 180MHz Collector current: 5A Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 1W Polarisation: bipolar Type of transistor: NPN Current gain: 200...400 Kind of package: reel; tape Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FODM1009R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SSOP4 Max. off-state voltage: 6V Manufacturer series: FODM100x |
на замовлення 295 шт: термін постачання 14-30 дні (днів) |
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MM3Z15VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 11267 шт: термін постачання 14-30 дні (днів) |
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MM3Z15VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 6.8V Type of diode: Zener |
на замовлення 8629 шт: термін постачання 14-30 дні (днів) |
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SZMMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 6.8V Type of diode: Zener |
на замовлення 2760 шт: термін постачання 14-30 дні (днів) |
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| NVMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDA59N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 35A Pulsed drain current: 236A Power dissipation: 392W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS89161 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 176mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.1nC Technology: PowerTrench® |
на замовлення 1993 шт: термін постачання 14-30 дні (днів) |
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FDS89161LZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDN5618P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3 Features of semiconductor devices: logic level Mounting: SMD Case: SuperSOT-3 Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.25A Gate charge: 13.8nC On-state resistance: 0.23Ω Power dissipation: 0.46W Kind of package: reel; tape Gate-source voltage: ±20V Technology: PowerTrench® Type of transistor: P-MOSFET Kind of channel: enhancement |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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FDB16AN08A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 135W Gate charge: 28nC Polarisation: unipolar Drain current: 58A Kind of channel: enhancement Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 16mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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RS1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RS1KFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVHPRS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 521 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115TM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP137AFCTC110T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP137 Mounting: SMD Type of integrated circuit: voltage regulator Case: WLCSP6 Operating temperature: -40...85°C Voltage drop: 60mV Output current: 0.7A Number of channels: 1 Tolerance: ±1% Output voltage: 1.1V Input voltage: 1.1...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC1G04DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape Delay time: 7ns |
на замовлення 630 шт: термін постачання 14-30 дні (днів) |
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| MC74HC1G04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape Delay time: 20ns |
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| MC74HC1G00DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
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| MC74HC1G04DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G32DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G08DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G32DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V |
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В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V Technology: CMOS Delay time: 15ns |
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| MC74HC1G00DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V |
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В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G02DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G02DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G02DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: NOR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Quiescent current: 1µA Number of outputs: 1 |
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| MC74HC1G02DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G04DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| MC100EP139DTR2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of channels: 1
Category: Supervisor circuits
Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MC100EP139DWG |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL
Kind of input: differential
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of outputs: 4
Number of channels: 1
Manufacturer series: 100EP
Category: Supervisor circuits
Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL
Kind of input: differential
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of outputs: 4
Number of channels: 1
Manufacturer series: 100EP
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| MUR420G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 125A; CASE267-05; bulk; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 125A
Case: CASE267-05
Kind of package: bulk
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 125A; CASE267-05; bulk; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 125A
Case: CASE267-05
Kind of package: bulk
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
на замовлення 657 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 34.90 грн |
| 23+ | 18.61 грн |
| 100+ | 17.70 грн |
| MUR420RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 125A; CASE267-05; reel; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 125A
Case: CASE267-05
Kind of package: reel
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; Ifsm: 125A; CASE267-05; reel; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 125A
Case: CASE267-05
Kind of package: reel
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
на замовлення 1514 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.32 грн |
| 13+ | 32.41 грн |
| 16+ | 27.50 грн |
| 50+ | 19.94 грн |
| 100+ | 17.95 грн |
| 500+ | 16.12 грн |
| TIP110G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| ESD5Z12T1G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Peak pulse power dissipation: 0.24kW
Version: ESD
Leakage current: 10nA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Peak pulse power dissipation: 0.24kW
Version: ESD
Leakage current: 10nA
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| ESD5Z6.0T1G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.181kW
Version: ESD
Leakage current: 10nA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.181kW
Version: ESD
Leakage current: 10nA
на замовлення 4036 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 56+ | 7.48 грн |
| 66+ | 6.32 грн |
| 103+ | 4.04 грн |
| 129+ | 3.23 грн |
| 500+ | 2.02 грн |
| 1000+ | 1.92 грн |
| 1500+ | 1.88 грн |
| 3000+ | 1.81 грн |
| BZX84C5V6 |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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Мінімальне замовлення: 25 шт
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| BZX84C5V6LT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
на замовлення 2568 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 99+ | 4.24 грн |
| 189+ | 2.20 грн |
| 500+ | 1.55 грн |
| 1000+ | 1.36 грн |
| BZX84C5V6ET3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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| SZBZX84C5V6LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C5V6ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| NCP1606ADR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| NCS20032DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| NCS20032DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| NCS20032DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: TSSOP8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| NCS2003SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| BZX84C18LT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
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| SZBZX84C18LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C18ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| 2SD1803T-TL-H |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK
Frequency: 180MHz
Collector current: 5A
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Kind of package: reel; tape
Case: DPAK
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK
Frequency: 180MHz
Collector current: 5A
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Kind of package: reel; tape
Case: DPAK
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| FODM1009R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SSOP4
Max. off-state voltage: 6V
Manufacturer series: FODM100x
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SSOP4
Max. off-state voltage: 6V
Manufacturer series: FODM100x
на замовлення 295 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.38 грн |
| 17+ | 25.26 грн |
| 100+ | 19.28 грн |
| MM3Z15VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 11267 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 107+ | 3.91 грн |
| 143+ | 2.91 грн |
| 165+ | 2.53 грн |
| 250+ | 2.06 грн |
| 500+ | 1.78 грн |
| 1000+ | 1.65 грн |
| 3000+ | 1.34 грн |
| MM3Z15VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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| MMSZ4692T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
на замовлення 8629 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.37 грн |
| 105+ | 3.99 грн |
| 125+ | 3.32 грн |
| 194+ | 2.14 грн |
| 226+ | 1.84 грн |
| 500+ | 1.57 грн |
| 1000+ | 1.51 грн |
| 3000+ | 1.45 грн |
| SZMMSZ4692T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
на замовлення 2760 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.37 грн |
| 27+ | 15.62 грн |
| 35+ | 12.13 грн |
| 100+ | 5.07 грн |
| NVMJST2D6N08HTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NTMJST2D6N08HTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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Мінімальне замовлення: 3000 шт
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| FDA59N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
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| FDS89161 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
на замовлення 1993 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.28 грн |
| 25+ | 69.80 грн |
| FDS89161LZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDN5618P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Features of semiconductor devices: logic level
Mounting: SMD
Case: SuperSOT-3
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Kind of package: reel; tape
Gate-source voltage: ±20V
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Features of semiconductor devices: logic level
Mounting: SMD
Case: SuperSOT-3
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Kind of package: reel; tape
Gate-source voltage: ±20V
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of channel: enhancement
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.22 грн |
| 18+ | 23.10 грн |
| 21+ | 20.52 грн |
| 50+ | 16.29 грн |
| FDB16AN08A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Gate charge: 28nC
Polarisation: unipolar
Drain current: 58A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Gate charge: 28nC
Polarisation: unipolar
Drain current: 58A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 16mΩ
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Мінімальне замовлення: 800 шт
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| RS1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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| RS1KFP |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| NRVHPRS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| 1SMB5932BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 521 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 28+ | 14.96 грн |
| 32+ | 13.05 грн |
| 50+ | 8.73 грн |
| 100+ | 7.40 грн |
| 200+ | 6.81 грн |
| SZ1SMB5932BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| DTC115EET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
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| DTC115EM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| DTC115TET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
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| DTC115TM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| NCP137AFCTC110T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
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| MC74HC1G04DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 7ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 7ns
на замовлення 630 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 148+ | 2.83 грн |
| 169+ | 2.46 грн |
| 184+ | 2.26 грн |
| 202+ | 2.06 грн |
| 250+ | 1.86 грн |
| 500+ | 1.83 грн |
| MC74HC1G04DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 20ns
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| MC74HC1G00DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
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од. на суму грн.
| MC74HC1G04DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MC74HC1G32DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MC74HC1G08DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MC74HC1G32DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
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| MC74HC1G00DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MC74HC1G00DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Technology: CMOS
Delay time: 15ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Technology: CMOS
Delay time: 15ns
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| MC74HC1G00DFT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
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| MC74HC1G00DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MC74HC1G02DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MC74HC1G02DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| MC74HC1G02DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Number of outputs: 1
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| MC74HC1G02DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
товару немає в наявності
Мінімальне замовлення: 5 шт
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од. на суму грн.
| MC74HC1G04DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.