| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CPH6350-TL-W | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23 Mounting: SMD Gate charge: 13nC Polarisation: unipolar Drain current: -6A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 86mΩ Pulsed drain current: -24A Power dissipation: 1.6W |
на замовлення 2553 шт: термін постачання 14-30 дні (днів) |
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1N4004 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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NB3H5150-01MNTXG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; QFN32,VQFN32 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: digital Case: QFN32; VQFN32 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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NB3H5150MNTXG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; QFN32,VQFN32 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: digital Case: QFN32; VQFN32 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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2SC5964-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.3W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 380MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
| NVMFS5C468NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 190A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 190A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 10.3mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SB5100 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| POE-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NCP1083 Type of accessories for development kits: expansion board Kit contents: prototype board Components: NCP1083 Connection: pin strips; RJ45 development kits accessories features: Arduino Shield compatible Interface: I2C; I2C - Slave; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STRUIX-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board development kits accessories features: Arduino Shield compatible; heart rate sensor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TS-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: LC717A00AR Type of accessories for development kits: expansion board Kit contents: prototype board Components: LC717A00AR Connection: Pmod connector development kits accessories features: Arduino compatible; capacitive keypad Interface: I2C; I2C - Slave; SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDP027N08B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 223A Power dissipation: 246W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 892A Gate charge: 137nC |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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MC74AC4040DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter Type of integrated circuit: digital Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC16 Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SMBJ15CA | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 100A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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NZT560A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 1W Case: SOT223-4; TO261-4 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz Current gain: 250...550 |
на замовлення 2642 шт: термін постачання 14-30 дні (днів) |
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MBRB8H100T4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 8A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.55V Max. forward impulse current: 250A Kind of package: reel; tape |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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SS14 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 1782 шт: термін постачання 14-30 дні (днів) |
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NTF3055-100T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2102 шт: термін постачання 14-30 дні (днів) |
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| 1N4148-T50A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: Ammo Pack Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NDT3055 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 25A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 25A |
на замовлення 2552 шт: термін постачання 14-30 дні (днів) |
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NVD3055-094T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 10.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD3055-150T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 45A; 28.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 28.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7SZ00P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA |
на замовлення 2275 шт: термін постачання 14-30 дні (днів) |
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NC7SZ00M5X-L22090 | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 7SZ; -40÷85°C; 2uA; OUT: 1 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SOT23-5 Operating temperature: -40...85°C Quiescent current: 2µA Manufacturer series: 7SZ Number of outputs: 1 |
на замовлення 15000 шт: термін постачання 14-30 дні (днів) |
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| NXH450N65L4Q2F2S1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC Technology: SiC Collector current: 450A Case: PIM40 Gate-emitter voltage: ±20V Mechanical mounting: screw Application: for UPS; Inverter Max. off-state voltage: 650V Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT |
товару немає в наявності |
Мінімальне замовлення: 36 шт В кошику од. на суму грн. | |||||||||||||||||
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FCP150N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 298W Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: 72A Gate charge: 72nC Polarisation: unipolar Drain current: 24A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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BAS16 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 2pF |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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MOCD207R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SO8 Turn-on time: 3µs Turn-off time: 2.8µs |
на замовлення 9918 шт: термін постачання 14-30 дні (днів) |
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| MOCD207D2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SOIC8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V Manufacturer series: MOCD207 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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MOCD208M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 40-125%@10mA Collector-emitter voltage: 70V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| MOCD208R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 40-125%@10mA Collector-emitter voltage: 70V Case: SOIC8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V Manufacturer series: MOCD208 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOCD211M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MOCD211R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: SOIC8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V Manufacturer series: MOCD211 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOCD223R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 8µs Turn-off time: 55µs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TIP42C | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74VHC4052DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SOIC16 Family: VHC Kind of package: reel; tape Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Manufacturer series: VHC Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MC74VHC4052DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: TSSOP16 Family: VHC Kind of package: reel; tape Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Manufacturer series: VHC Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SZMMSZ5236BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MSQA6V1W5T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.1...7.2V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 3V Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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1N4148 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: bulk; tape Max. forward voltage: 1V Reverse recovery time: 4ns |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| CPH6350-TL-W |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 86mΩ
Pulsed drain current: -24A
Power dissipation: 1.6W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 86mΩ
Pulsed drain current: -24A
Power dissipation: 1.6W
на замовлення 2553 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.19 грн |
| 12+ | 36.90 грн |
| 14+ | 31.37 грн |
| 25+ | 25.49 грн |
| 50+ | 22.06 грн |
| 100+ | 19.46 грн |
| 250+ | 16.94 грн |
| 300+ | 16.52 грн |
| 1N4004 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
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Мінімальне замовлення: 10 шт
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| NB3H5150-01MNTXG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| NB3H5150MNTXG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 2SC5964-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
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| SB540 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| NVMFS5C468NLAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 190A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 190A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 190A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 190A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SB5100 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
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В кошику
од. на суму грн.
| POE-GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCP1083
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP1083
Connection: pin strips; RJ45
development kits accessories features: Arduino Shield compatible
Interface: I2C; I2C - Slave; SPI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCP1083
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP1083
Connection: pin strips; RJ45
development kits accessories features: Arduino Shield compatible
Interface: I2C; I2C - Slave; SPI
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од. на суму грн.
| STRUIX-GEVB |
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
development kits accessories features: Arduino Shield compatible; heart rate sensor
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
development kits accessories features: Arduino Shield compatible; heart rate sensor
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од. на суму грн.
| TS-GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LC717A00AR
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: LC717A00AR
Connection: Pmod connector
development kits accessories features: Arduino compatible; capacitive keypad
Interface: I2C; I2C - Slave; SPI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LC717A00AR
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: LC717A00AR
Connection: Pmod connector
development kits accessories features: Arduino compatible; capacitive keypad
Interface: I2C; I2C - Slave; SPI
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од. на суму грн.
| FDP027N08B-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 892A
Gate charge: 137nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 892A
Gate charge: 137nC
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.88 грн |
| 10+ | 167.73 грн |
| 50+ | 142.57 грн |
| MC74AC4040DR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SMBJ15CA |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| NZT560A |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Current gain: 250...550
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Current gain: 250...550
на замовлення 2642 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.83 грн |
| 10+ | 42.02 грн |
| 50+ | 30.11 грн |
| 100+ | 26.17 грн |
| 250+ | 21.89 грн |
| 500+ | 19.29 грн |
| 1000+ | 18.11 грн |
| MBRB8H100T4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.55V
Max. forward impulse current: 250A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.55V
Max. forward impulse current: 250A
Kind of package: reel; tape
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.15 грн |
| 5+ | 98.96 грн |
| 10+ | 91.41 грн |
| 50+ | 73.80 грн |
| 100+ | 67.93 грн |
| 250+ | 59.54 грн |
| SS14 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 1782 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.97 грн |
| 30+ | 14.26 грн |
| 33+ | 13.00 грн |
| 50+ | 10.40 грн |
| 100+ | 9.39 грн |
| 250+ | 8.22 грн |
| 500+ | 7.30 грн |
| 1000+ | 6.46 грн |
| NTF3055-100T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2102 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 103.86 грн |
| 10+ | 54.26 грн |
| 50+ | 46.29 грн |
| 100+ | 42.94 грн |
| 200+ | 39.67 грн |
| 500+ | 33.88 грн |
| 1000+ | 30.02 грн |
| 2000+ | 26.42 грн |
| 1N4148-T50A |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 4ns
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| NDT3055 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 25A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 25A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
на замовлення 2552 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 111.99 грн |
| 10+ | 68.35 грн |
| 50+ | 49.40 грн |
| 100+ | 43.36 грн |
| 250+ | 36.82 грн |
| 500+ | 32.88 грн |
| 1000+ | 29.69 грн |
| 2000+ | 27.09 грн |
| NVD3055-094T4G-VF01 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
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В кошику
од. на суму грн.
| NVD3055-150T4G-VF01 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 45A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 45A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
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| NC7SZ00P5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
на замовлення 2275 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 97+ | 4.36 грн |
| 112+ | 3.77 грн |
| 136+ | 3.09 грн |
| 174+ | 2.42 грн |
| 250+ | 2.14 грн |
| NC7SZ00M5X-L22090 |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 7SZ; -40÷85°C; 2uA; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Quiescent current: 2µA
Manufacturer series: 7SZ
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 7SZ; -40÷85°C; 2uA; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Quiescent current: 2µA
Manufacturer series: 7SZ
Number of outputs: 1
на замовлення 15000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.23 грн |
| NXH450N65L4Q2F2S1G |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Technology: SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Application: for UPS; Inverter
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Technology: SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Application: for UPS; Inverter
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
товару немає в наявності
Мінімальне замовлення: 36 шт
В кошику
од. на суму грн.
| FCP150N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 72A
Gate charge: 72nC
Polarisation: unipolar
Drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 72A
Gate charge: 72nC
Polarisation: unipolar
Drain current: 24A
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Мінімальне замовлення: 800 шт
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| BAS16 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 2pF
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Мінімальне замовлення: 25 шт
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| MOCD207R2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
на замовлення 9918 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.93 грн |
| 14+ | 31.70 грн |
| 15+ | 29.44 грн |
| 30+ | 25.49 грн |
| 50+ | 23.82 грн |
| 100+ | 21.47 грн |
| 300+ | 19.96 грн |
| MOCD207D2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD207
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD207
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Мінімальне замовлення: 2500 шт
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| MOCD208M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
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Мінімальне замовлення: 3000 шт
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| MOCD208R2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD208
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD208
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| MOCD211M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
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| MOCD211R2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD211
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD211
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| MOCD223R2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
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Мінімальне замовлення: 2500 шт
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| TIP42C |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| MC74VHC4052DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
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Мінімальне замовлення: 2500 шт
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| MC74VHC4052DTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
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Мінімальне замовлення: 2500 шт
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| SZMMSZ5236BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MSQA6V1W5T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
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| 1N4007 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
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Мінімальне замовлення: 10 шт
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| 1N4148 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
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Мінімальне замовлення: 30 шт
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