| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC34064P-5G | ONSEMI |
  Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Case: TO92 Mounting: THT Number of channels: 1 Operating temperature: 0...70°C Kind of package: bulk Active logical level: low Threshold on-voltage: 4.6V Kind of RESET output: open collector Supply voltage: 1...6.5V DC Maximum output current: 60mA |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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| MC34064D-5R2G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Case: SOIC8 Mounting: SMD Number of channels: 1 Operating temperature: 0...70°C Active logical level: low Threshold on-voltage: 4.61V Kind of RESET output: open drain Supply voltage: 6.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2N6287 | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 20A Power dissipation: 160W Case: TO3 Mounting: THT Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBAT54XV2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU6M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Max. forward impulse current: 175A Max. forward voltage: 1V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 1kV Electrical mounting: THT Load current: 6A Kind of package: tube Case: GBU Type of bridge rectifier: single-phase |
на замовлення 720 шт: термін постачання 14-30 дні (днів) |
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FOD4118TV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver Mounting: THT Manufacturer series: FOD4118 Kind of output: triac; zero voltage crossing driver Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optotriac Turn-on time: 60µs Output voltage: 800V Kind of package: tube Case: DIP6 Conform to the norm: VDE Turn-off time: 52µs Number of channels: 1 Trigger current: 1.3mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1SMB5933BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 22V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Mounting: SMD Tolerance: ±5% Manufacturer series: 1SMB59xxB Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 22V Type of diode: Zener |
на замовлення 320 шт: термін постачання 14-30 дні (днів) |
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SZ1SMB5933BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 22V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMUN2138LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Case: SOT23; TO236AB Collector current: 0.1A |
на замовлення 3620 шт: термін постачання 14-30 дні (днів) |
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74LCX540MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; LCX Manufacturer series: LCX Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: digital Kind of output: 3-state Technology: CMOS Quiescent current: 10µA Kind of package: tube Case: TSSOP20 Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 |
на замовлення 123 шт: термін постачання 14-30 дні (днів) |
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| FNC42060F2 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V Type of integrated circuit: driver Output current: 20A DC supply current: 2.65mA Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Insulation voltage: 2kV Power dissipation: 50W Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NSVBAS21SLT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTD14N03RT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 2.5A Power dissipation: 20.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 1.8nC |
на замовлення 2485 шт: термін постачання 14-30 дні (днів) |
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2N6292G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 7A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP81071BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2 Case: SO8 Number of channels: 2 Impulse rise time: 15ns Mounting: SMD Supply voltage: 4.5...20V DC Output current: -5...5A Type of integrated circuit: driver Kind of output: non-inverting Protection: undervoltage UVP Operating temperature: -40...140°C Pulse fall time: 15ns Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver |
на замовлення 2277 шт: термін постачання 14-30 дні (днів) |
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NUP1301ML3T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; double series; ESD; SOT23; Ch: 1; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Max. off-state voltage: 70V Semiconductor structure: double series Type of diode: TVS array Version: ESD Application: automotive industry |
на замовлення 3564 шт: термін постачання 14-30 дні (днів) |
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MC7824BTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 24V; 1A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 24V Output current: 1A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC7824ACTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 24V; 1A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 24V Output current: 1A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC7824CD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 24V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 24V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74VHC1G14DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC74VHC1G14DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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SS26 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMMUN2213LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
| CAT93C86BHU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; Microwire; 2kx8/1kx16bit; 1.8÷5.5V Mounting: SMD Access time: 100ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 4MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2kx8/1kx16bit Kind of package: reel; tape Case: uDFN8 Interface: Microwire Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV33063AVDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 33kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Output voltage: 3...40V Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 33kHz Number of channels: 1 Kind of package: reel; tape Supply voltage: 1.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD210RLG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD210T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD210T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJT4030PT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBF4391LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 30Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 1852 шт: термін постачання 14-30 дні (днів) |
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BSR57 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 20mA Power dissipation: 0.25W Case: SOT23 Gate-source voltage: -40V On-state resistance: 40Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 848 шт: термін постачання 14-30 дні (днів) |
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J109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA Mounting: THT Gate current: 10mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 40mA Type of transistor: N-JFET Gate-source voltage: -25V Kind of package: tape Case: TO92 On-state resistance: 12Ω |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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MMBFJ110 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Power dissipation: 0.46W Case: SOT23 Mounting: SMD Kind of package: reel; tape Gate current: 10mA Drain current: 10mA Gate-source voltage: -25V On-state resistance: 18Ω |
на замовлення 2809 шт: термін постачання 14-30 дні (днів) |
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BSR58 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.25W Case: SOT23 Gate-source voltage: -40V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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NTMS5P02R2G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8 Case: SO8 Power dissipation: 1.47W Gate charge: 20nC Polarisation: unipolar Drain current: -5.4A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 33mΩ Mounting: SMD Pulsed drain current: -20A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMS5P02R2G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8 Case: SO8 Power dissipation: 1.47W Gate charge: 20nC Polarisation: unipolar Drain current: -5.4A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 33mΩ Mounting: SMD Pulsed drain current: -20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FODM352 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 300V Collector-emitter voltage: 300V CTR@If: 1000-5000%@1mA Kind of output: Darlington Insulation voltage: 3.75kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 20µs Case: SOP4 Turn-off time: 0.1ms Number of channels: 1 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV7428D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; system basis chip SBC; 3.3÷5VDC; LIN; SMD; SO8 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 3.3...5V DC Type of integrated circuit: interface Integrated circuit features: integrated voltage regulator; LIN transceiver Application: automotive industry Kind of package: reel; tape Case: SO8 Interface: LIN Kind of integrated circuit: system basis chip SBC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCV7428MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; system basis chip SBC; 4÷28VDC; LIN; SMD; DFN8 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 4...28V DC Type of integrated circuit: interface Integrated circuit features: integrated voltage regulator; LIN transceiver Application: automotive industry Kind of package: reel; tape Case: DFN8 Interface: LIN Kind of integrated circuit: system basis chip SBC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| NSVDTC114YM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Application: automotive industry Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP5183DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Output current: -4.3...4.3A Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 40ns Pulse fall time: 40ns Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR2535CTLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.41V Max. load current: 25A Max. forward impulse current: 150A Kind of package: tube |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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MMBZ5258BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 36V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMBZ52xxBLT1G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape |
на замовлення 995 шт: термін постачання 14-30 дні (днів) |
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NSVRB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3646S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Current gain: 140...280 |
на замовлення 894 шт: термін постачання 14-30 дні (днів) |
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NRVBS3200NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.86V Kind of package: reel; tape Max. forward impulse current: 100A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN73711MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side,gate driver; MillerDrive™; SOP8 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-side Technology: MillerDrive™ Case: SOP8 Output current: -4...4A Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 40ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMUN2131LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 117 шт: термін постачання 14-30 дні (днів) |
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| MUN2131T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. Current gain: 8...15 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NSVMMUN2131LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 8...15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5360BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5360BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N459ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N459A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; bulk Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N459TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
FDD3672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK Mounting: SMD Case: DPAK Power dissipation: 135W Gate charge: 36nC Polarisation: unipolar Technology: UltraFET® Drain current: 44A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 68mΩ |
на замовлення 1496 шт: термін постачання 14-30 дні (днів) |
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| PCA9535ECMTTXG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24 Type of integrated circuit: interface Kind of integrated circuit: I/O expander Supply voltage: 1.65...5.5V DC Interface: I2C; SMBus Mounting: SMD Case: WQFN24 Integrated circuit features: PWM Number of channels: 16 Frequency: 1MHz Application: for LED applications Operating temperature: -55...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
 |
SBC847CDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| MC34064P-5G |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TO92
Mounting: THT
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: bulk
Active logical level: low
Threshold on-voltage: 4.6V
Kind of RESET output: open collector
Supply voltage: 1...6.5V DC
Maximum output current: 60mA
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TO92
Mounting: THT
Number of channels: 1
Operating temperature: 0...70°C
Kind of package: bulk
Active logical level: low
Threshold on-voltage: 4.6V
Kind of RESET output: open collector
Supply voltage: 1...6.5V DC
Maximum output current: 60mA
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.03 грн |
| 15+ | 28.45 грн |
| 25+ | 26.37 грн |
| MC34064D-5R2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Case: SOIC8
Mounting: SMD
Number of channels: 1
Operating temperature: 0...70°C
Active logical level: low
Threshold on-voltage: 4.61V
Kind of RESET output: open drain
Supply voltage: 6.5V
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Case: SOIC8
Mounting: SMD
Number of channels: 1
Operating temperature: 0...70°C
Active logical level: low
Threshold on-voltage: 4.61V
Kind of RESET output: open drain
Supply voltage: 6.5V
товару немає в наявності
В кошику
од. на суму грн.
| 2N6287 |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| SBAT54XV2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| GBU6M |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.60 грн |
| 10+ | 55.07 грн |
| FOD4118TV |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver
Mounting: THT
Manufacturer series: FOD4118
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Output voltage: 800V
Kind of package: tube
Case: DIP6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; triac,zero voltage crossing driver
Mounting: THT
Manufacturer series: FOD4118
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optotriac
Turn-on time: 60µs
Output voltage: 800V
Kind of package: tube
Case: DIP6
Conform to the norm: VDE
Turn-off time: 52µs
Number of channels: 1
Trigger current: 1.3mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1SMB5933BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Manufacturer series: 1SMB59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 22V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Manufacturer series: 1SMB59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 22V
Type of diode: Zener
на замовлення 320 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.94 грн |
| 22+ | 19.02 грн |
| 26+ | 16.44 грн |
| 50+ | 12.10 грн |
| 100+ | 10.93 грн |
| 115+ | 8.34 грн |
| 315+ | 7.93 грн |
| SZ1SMB5933BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
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В кошику
од. на суму грн.
| MMUN2138LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT23; TO236AB
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT23; TO236AB
Collector current: 0.1A
на замовлення 3620 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.49 грн |
| 148+ | 2.84 грн |
| 226+ | 1.85 грн |
| 500+ | 1.43 грн |
| 1000+ | 1.29 грн |
| 3000+ | 1.12 грн |
| 74LCX540MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; LCX
Manufacturer series: LCX
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Quiescent current: 10µA
Kind of package: tube
Case: TSSOP20
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; LCX
Manufacturer series: LCX
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Quiescent current: 10µA
Kind of package: tube
Case: TSSOP20
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
на замовлення 123 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 104.24 грн |
| 10+ | 58.24 грн |
| 25+ | 46.31 грн |
| 50+ | 39.55 грн |
| FNC42060F2 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V
Type of integrated circuit: driver
Output current: 20A
DC supply current: 2.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 50W
Collector-emitter voltage: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V
Type of integrated circuit: driver
Output current: 20A
DC supply current: 2.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 50W
Collector-emitter voltage: 600V
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В кошику
од. на суму грн.
| NSVBAS21SLT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
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В кошику
од. на суму грн.
| NTD14N03RT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 1.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 1.8nC
на замовлення 2485 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.55 грн |
| 16+ | 26.87 грн |
| 17+ | 25.95 грн |
| 50+ | 24.45 грн |
| 100+ | 23.61 грн |
| 500+ | 21.53 грн |
| 1000+ | 21.44 грн |
| 2N6292G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
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В кошику
од. на суму грн.
| NCP81071BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Case: SO8
Number of channels: 2
Impulse rise time: 15ns
Mounting: SMD
Supply voltage: 4.5...20V DC
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Protection: undervoltage UVP
Operating temperature: -40...140°C
Pulse fall time: 15ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Case: SO8
Number of channels: 2
Impulse rise time: 15ns
Mounting: SMD
Supply voltage: 4.5...20V DC
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Protection: undervoltage UVP
Operating temperature: -40...140°C
Pulse fall time: 15ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 2277 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.35 грн |
| 10+ | 62.58 грн |
| 17+ | 57.57 грн |
| 46+ | 54.24 грн |
| 100+ | 52.57 грн |
| NUP1301ML3T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; ESD; SOT23; Ch: 1; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: TVS array
Version: ESD
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; ESD; SOT23; Ch: 1; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: TVS array
Version: ESD
Application: automotive industry
на замовлення 3564 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.17 грн |
| 36+ | 11.77 грн |
| 100+ | 7.68 грн |
| 152+ | 6.34 грн |
| 417+ | 5.92 грн |
| 3000+ | 5.76 грн |
| MC7824BTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 24V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 24V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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| MC7824ACTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 24V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 1A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 24V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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| MC7824CD2TR4G |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 24V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 24V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 24V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC74VHC1G14DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| MC74VHC1G14DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
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| SS26 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
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Мінімальне замовлення: 5 шт
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| SS26 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 10 шт
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| SMMUN2213LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
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Мінімальне замовлення: 10000 шт
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| CAT93C86BHU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; Microwire; 2kx8/1kx16bit; 1.8÷5.5V
Mounting: SMD
Access time: 100ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 4MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8/1kx16bit
Kind of package: reel; tape
Case: uDFN8
Interface: Microwire
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; Microwire; 2kx8/1kx16bit; 1.8÷5.5V
Mounting: SMD
Access time: 100ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 4MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8/1kx16bit
Kind of package: reel; tape
Case: uDFN8
Interface: Microwire
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NCV33063AVDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 33kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 33kHz
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5V
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 33kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 33kHz
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5V
Application: automotive industry
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| MJD210RLG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD210T4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD210T4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| NJT4030PT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
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| MMBF4391LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 1852 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.05 грн |
| 16+ | 27.03 грн |
| 18+ | 23.45 грн |
| 50+ | 14.94 грн |
| 100+ | 12.27 грн |
| 107+ | 8.93 грн |
| 293+ | 8.51 грн |
| 500+ | 8.26 грн |
| 1000+ | 8.18 грн |
| BSR57 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 40Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 40Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 848 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.48 грн |
| 39+ | 10.93 грн |
| 100+ | 9.68 грн |
| 111+ | 8.59 грн |
| 306+ | 8.09 грн |
| J109 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Mounting: THT
Gate current: 10mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 40mA
Type of transistor: N-JFET
Gate-source voltage: -25V
Kind of package: tape
Case: TO92
On-state resistance: 12Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Mounting: THT
Gate current: 10mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 40mA
Type of transistor: N-JFET
Gate-source voltage: -25V
Kind of package: tape
Case: TO92
On-state resistance: 12Ω
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.83 грн |
| 13+ | 32.38 грн |
| 16+ | 27.54 грн |
| 25+ | 22.20 грн |
| 50+ | 19.19 грн |
| 75+ | 12.77 грн |
| MMBFJ110 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Drain current: 10mA
Gate-source voltage: -25V
On-state resistance: 18Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.46W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Drain current: 10mA
Gate-source voltage: -25V
On-state resistance: 18Ω
на замовлення 2809 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.32 грн |
| 12+ | 35.38 грн |
| 14+ | 30.46 грн |
| 50+ | 21.61 грн |
| 74+ | 12.93 грн |
| 202+ | 12.27 грн |
| 1000+ | 11.93 грн |
| BSR58 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.76 грн |
| 22+ | 19.61 грн |
| 50+ | 13.27 грн |
| 100+ | 11.18 грн |
| 137+ | 7.01 грн |
| 375+ | 6.59 грн |
| 3000+ | 6.34 грн |
| NTMS5P02R2G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| NVMS5P02R2G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
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| FODM352 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 300V
Collector-emitter voltage: 300V
CTR@If: 1000-5000%@1mA
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 20µs
Case: SOP4
Turn-off time: 0.1ms
Number of channels: 1
Mounting: SMD
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 300V
Collector-emitter voltage: 300V
CTR@If: 1000-5000%@1mA
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 20µs
Case: SOP4
Turn-off time: 0.1ms
Number of channels: 1
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV7428D13R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 3.3÷5VDC; LIN; SMD; SO8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3.3...5V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 3.3÷5VDC; LIN; SMD; SO8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3.3...5V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NCV7428MW3R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; LIN; SMD; DFN8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4...28V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: DFN8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; LIN; SMD; DFN8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4...28V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: DFN8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
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Мінімальне замовлення: 3000 шт
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| NSVDTC114YM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
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| NCP5183DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4.3...4.3A
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 40ns
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4.3...4.3A
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 40ns
Voltage class: 600V
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| MBR2535CTLG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 25A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 25A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 132.99 грн |
| 10+ | 101.80 грн |
| MMBZ5258BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
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| RB751V40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
на замовлення 995 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.68 грн |
| 53+ | 8.01 грн |
| 64+ | 6.59 грн |
| 87+ | 4.81 грн |
| 111+ | 3.77 грн |
| 135+ | 3.11 грн |
| 250+ | 2.64 грн |
| 500+ | 2.44 грн |
| NSVRB751V40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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| 2SC3646S-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
на замовлення 894 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.31 грн |
| 13+ | 34.21 грн |
| 40+ | 30.29 грн |
| 100+ | 22.20 грн |
| 150+ | 21.53 грн |
| 250+ | 20.28 грн |
| 500+ | 17.11 грн |
| NRVBS3200NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.86V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.86V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
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| FAN73711MX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,gate driver; MillerDrive™; SOP8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SOP8
Output current: -4...4A
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,gate driver; MillerDrive™; SOP8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SOP8
Output current: -4...4A
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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Мінімальне замовлення: 3000 шт
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| MMUN2131LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 117 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.88 грн |
| 69+ | 6.09 грн |
| 117+ | 3.34 грн |
| MUN2131T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
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| NSVMMUN2131LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 8...15
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 8...15
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| 1N5360BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
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| 1N5360BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
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| 1N459ATR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
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| 1N459A |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
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| 1N459TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
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| FDD3672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 135W
Gate charge: 36nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 68mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 135W
Gate charge: 36nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 68mΩ
на замовлення 1496 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.05 грн |
| 5+ | 113.48 грн |
| 10+ | 98.46 грн |
| 25+ | 82.61 грн |
| 50+ | 71.76 грн |
| 100+ | 69.26 грн |
| PCA9535ECMTTXG |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: WQFN24
Integrated circuit features: PWM
Number of channels: 16
Frequency: 1MHz
Application: for LED applications
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: WQFN24
Integrated circuit features: PWM
Number of channels: 16
Frequency: 1MHz
Application: for LED applications
Operating temperature: -55...125°C
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| SBC847CDXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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Мінімальне замовлення: 4000 шт
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