| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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1SMB5943BT3G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
на замовлення 1032 шт: термін постачання 14-30 дні (днів) |
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SZ1SMB5943BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV74HC589ADTR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; TSSOP16; HC; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; parallel in; serial input; serial output; shift register Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Kind of output: 3-state Number of inputs: 13 |
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NCV4254CPDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| LM2902EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: -40...105°C Kind of package: reel; tape Input offset voltage: 10mV Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LM2902VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 13mV Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LM2902VDTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: TSSOP14 Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 13mV Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSS60200LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 0.54W Polarisation: bipolar Type of transistor: PNP Current gain: 150 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 100MHz Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSS60201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 0.54W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 150...350 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 100MHz Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NSS60101DMTTBG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2.27W Polarisation: bipolar Application: automotive industry Type of transistor: NPN x2 Current gain: 90 Kind of package: reel; tape Case: WDFN6 Frequency: 180MHz Collector current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NSS60100DMTTBG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2.27W Polarisation: bipolar Application: automotive industry Type of transistor: PNP x2 Kind of package: reel; tape Case: WDFN6 Collector current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NSS60201SMTTBG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 1.8W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 35 Kind of package: reel; tape Case: WDFN6 Frequency: 180MHz Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NSS60600MZ4T3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: PNP Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NSS60601MZ4T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: NPN Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVRB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVRB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV887103D1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; 340kHz; Ch: 1; reel,tape; 3.2÷40V Mounting: SMD Supply voltage: 3.2...40V Type of integrated circuit: PMIC Efficiency: 93% Application: automotive industry Kind of package: reel; tape Case: SO8 Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 0.34MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTB110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 62nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 69A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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NTP110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 62nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVB110N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTHL110N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.5A Power dissipation: 240W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A Technology: SuperFET® |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||
| NTMT110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 62nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 69A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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NTPF110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 62nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| NVHL110N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVHL110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDN306P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.6A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 80mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate-source voltage: ±8V |
на замовлення 124 шт: термін постачання 14-30 дні (днів) |
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FDN358P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate-source voltage: ±20V |
на замовлення 2490 шт: термін постачання 14-30 дні (днів) |
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FCH029N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.8A Power dissipation: 463W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 201nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTHL019N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 73A Power dissipation: 625W Case: TO247 Gate-source voltage: ±30V On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 328A Gate charge: 282nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBD914 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 4pF |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||
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FDD770N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2417 шт: термін постачання 14-30 дні (днів) |
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BZX85C5V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Case: DO41 Mounting: THT Tolerance: ±5% Manufacturer series: BZX85C Kind of package: bulk Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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MC7815BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1MFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Reverse recovery time: 2µs Features of semiconductor devices: glass passivated Capacitance: 4pF |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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S1MFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.2A Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape Reverse recovery time: 1.5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVS1MFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 1A; 2us; SOD123F; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Reverse recovery time: 2µs Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FNB35060T | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; 50A; Uoper: 600V; Usup: 300V; Uinsul: 2.5kV; Uce: 600V Insulation voltage: 2.5kV Operating voltage: 600V Mounting: THT Supply voltage: 300V Collector-emitter voltage: 600V Output current: 50A Type of integrated circuit: driver DC supply current: 11mA Operating temperature: -40...150°C |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||
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SZMM3Z5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G Application: automotive industry |
на замовлення 364 шт: термін постачання 14-30 дні (днів) |
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MM5Z4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5Z |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MID400 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V Type of optocoupler: optocoupler Turn-on time: 1µs Output voltage: 7V Case: DIP8 Turn-off time: 1µs Number of channels: 1 Mounting: THT Kind of output: logic Insulation voltage: 2.5kV |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SZBZX84C9V1ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZBZX84C9V1LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM317T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 1.5A Case: TO220-3 Mounting: THT Kind of package: tube Operating temperature: 0...125°C Number of channels: 1 Heatsink thickness: 0.51...0.61mm Input voltage: 3...40V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
| MC74HC1GU04DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; TSOP5; -55÷125°C; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Quiescent current: 1µA Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74HC1GU04DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| MC74HC1GU04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| MC74HC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
 |
NZT605 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 110V Collector current: 1.5A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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 |
FDP80N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Power dissipation: 176W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 74nC Kind of channel: enhancement Pulsed drain current: 320A Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||
| NCP1342AMDCDAD1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 9÷28V; flyback; Ubr: 700V Type of integrated circuit: PMIC Mounting: SMD Topology: flyback Operating temperature: -40...125°C Breakdown voltage: 700V Input voltage: 9...28V |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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 |
MC14073BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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|
74ACT00SC | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; ACT; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Manufacturer series: ACT Quiescent current: 20µA |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
| NVMFS5C410NWFET1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5 Pulsed drain current: 900A Power dissipation: 83W Gate charge: 86nC Polarisation: unipolar Drain current: 300A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5 On-state resistance: 920µΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FDBL0110N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| FDBL86561-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| NVMFS5C410NAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 920µΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 900A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCS2202SN2T1G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5 Operating temperature: -40...105°C Input offset voltage: 10mV Type of integrated circuit: comparator Kind of output: open drain Number of comparators: 1 Input bias current: 1pA Application: automotive industry Kind of package: reel; tape Case: SOT23-5 Operating voltage: 0.85...6V Kind of comparator: low-power Delay time: 1.08µs Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
74LVX4245MTCX | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.7...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: LVX Kind of output: 3-state |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| MG2040MUTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape Mounting: SMD Breakdown voltage: 5.5V Application: HDMI Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Case: uDFN18 Type of diode: TVS array Number of channels: 14 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| 1SMB5943BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 1032 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.25 грн |
| 22+ | 19.86 грн |
| 27+ | 15.85 грн |
| 33+ | 12.68 грн |
| 50+ | 9.85 грн |
| 100+ | 8.51 грн |
| 200+ | 7.84 грн |
| SZ1SMB5943BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| NLV74HC589ADTR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; TSSOP16; HC; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 13
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; TSSOP16; HC; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 13
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| NCV4254CPDAJR2G |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| LM2902EDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset voltage: 10mV
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset voltage: 10mV
Input offset current: 200nA
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| LM2902VDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
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| LM2902VDTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
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| NSS60200LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 150
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 150
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
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| NSS60201LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 150...350
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 150...350
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
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| NSS60101DMTTBG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 90
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 90
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 1A
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| NSS60100DMTTBG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP x2
Kind of package: reel; tape
Case: WDFN6
Collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP x2
Kind of package: reel; tape
Case: WDFN6
Collector current: 1A
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| NSS60201SMTTBG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 1.8W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 35
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 1.8W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 35
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 2A
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| NSS60600MZ4T3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
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| NSS60601MZ4T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
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| RB751S40T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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| NSVRB751S40T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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| NSVRB751S40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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| NCV887103D1R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; 340kHz; Ch: 1; reel,tape; 3.2÷40V
Mounting: SMD
Supply voltage: 3.2...40V
Type of integrated circuit: PMIC
Efficiency: 93%
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.34MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; 340kHz; Ch: 1; reel,tape; 3.2÷40V
Mounting: SMD
Supply voltage: 3.2...40V
Type of integrated circuit: PMIC
Efficiency: 93%
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.34MHz
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| NTB110N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
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Мінімальне замовлення: 800 шт
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| NTP110N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
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| NVB110N65S3F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
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| NTHL110N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Technology: SuperFET®
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Мінімальне замовлення: 450 шт
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| NTMT110N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
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Мінімальне замовлення: 3000 шт
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| NTPF110N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
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Мінімальне замовлення: 1000 шт
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| NVHL110N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
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| NVHL110N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
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| FDN306P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±8V
на замовлення 124 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.03 грн |
| 15+ | 29.54 грн |
| 17+ | 25.53 грн |
| 50+ | 18.69 грн |
| 100+ | 16.60 грн |
| FDN358P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±20V
на замовлення 2490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.12 грн |
| 13+ | 33.88 грн |
| 15+ | 29.79 грн |
| 50+ | 22.36 грн |
| 100+ | 19.78 грн |
| 500+ | 14.77 грн |
| 1000+ | 13.35 грн |
| FCH029N65S3-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 201nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 201nC
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| NTHL019N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 328A
Gate charge: 282nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 328A
Gate charge: 282nC
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| MMBD914 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
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Мінімальне замовлення: 25 шт
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| FDD770N15A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2417 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 101.54 грн |
| 10+ | 63.92 грн |
| 25+ | 57.41 грн |
| 100+ | 48.06 грн |
| 250+ | 41.80 грн |
| 500+ | 39.63 грн |
| BZX85C5V6 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: BZX85C
Kind of package: bulk
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: BZX85C
Kind of package: bulk
Semiconductor structure: single diode
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Мінімальне замовлення: 10 шт
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| MC7815BDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| S1MFL |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 2µs
Features of semiconductor devices: glass passivated
Capacitance: 4pF
на замовлення 657 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.06 грн |
| 34+ | 12.43 грн |
| 50+ | 10.16 грн |
| 100+ | 9.24 грн |
| 217+ | 4.41 грн |
| 597+ | 4.16 грн |
| S1MFP |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
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| NRVS1MFL |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 2us; SOD123F; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 2µs
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 2us; SOD123F; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 2µs
Application: automotive industry
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| FNB35060T |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 50A; Uoper: 600V; Usup: 300V; Uinsul: 2.5kV; Uce: 600V
Insulation voltage: 2.5kV
Operating voltage: 600V
Mounting: THT
Supply voltage: 300V
Collector-emitter voltage: 600V
Output current: 50A
Type of integrated circuit: driver
DC supply current: 11mA
Operating temperature: -40...150°C
Category: MOSFET/IGBT drivers
Description: IC: driver; 50A; Uoper: 600V; Usup: 300V; Uinsul: 2.5kV; Uce: 600V
Insulation voltage: 2.5kV
Operating voltage: 600V
Mounting: THT
Supply voltage: 300V
Collector-emitter voltage: 600V
Output current: 50A
Type of integrated circuit: driver
DC supply current: 11mA
Operating temperature: -40...150°C
товару немає в наявності
Мінімальне замовлення: 10 шт
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| SZMM3Z5V1T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 364 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.15 грн |
| 34+ | 12.60 грн |
| 100+ | 6.78 грн |
| 273+ | 3.50 грн |
| MM5Z4V7T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z
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| MID400 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Output voltage: 7V
Case: DIP8
Turn-off time: 1µs
Number of channels: 1
Mounting: THT
Kind of output: logic
Insulation voltage: 2.5kV
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Output voltage: 7V
Case: DIP8
Turn-off time: 1µs
Number of channels: 1
Mounting: THT
Kind of output: logic
Insulation voltage: 2.5kV
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Мінімальне замовлення: 1000 шт
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| SZBZX84C9V1ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C9V1LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
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| LM317T |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 3...40V
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 3...40V
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Мінімальне замовлення: 3 шт
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| MC74HC1GU04DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; TSOP5; -55÷125°C; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; TSOP5; -55÷125°C; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Kind of integrated circuit: inverter
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| MC74HC1GU04DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
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Мінімальне замовлення: 3000 шт
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| MC74HC1GU04DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| MC74HC1GU04DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NZT605 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 110V; 1.5A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 110V
Collector current: 1.5A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.02 грн |
| 12+ | 35.80 грн |
| 100+ | 21.36 грн |
| 250+ | 17.61 грн |
| 500+ | 15.52 грн |
| 1000+ | 15.02 грн |
| FDP80N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of channel: enhancement
Pulsed drain current: 320A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of channel: enhancement
Pulsed drain current: 320A
Kind of package: tube
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| NCP1342AMDCDAD1R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 9÷28V; flyback; Ubr: 700V
Type of integrated circuit: PMIC
Mounting: SMD
Topology: flyback
Operating temperature: -40...125°C
Breakdown voltage: 700V
Input voltage: 9...28V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 9÷28V; flyback; Ubr: 700V
Type of integrated circuit: PMIC
Mounting: SMD
Topology: flyback
Operating temperature: -40...125°C
Breakdown voltage: 700V
Input voltage: 9...28V
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 53.02 грн |
| MC14073BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
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Мінімальне замовлення: 2500 шт
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| 74ACT00SC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; ACT; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: ACT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; ACT; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: ACT
Quiescent current: 20µA
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Мінімальне замовлення: 3 шт
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| NVMFS5C410NWFET1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Pulsed drain current: 900A
Power dissipation: 83W
Gate charge: 86nC
Polarisation: unipolar
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 920µΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Pulsed drain current: 900A
Power dissipation: 83W
Gate charge: 86nC
Polarisation: unipolar
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 920µΩ
Mounting: SMD
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| FDBL0110N60 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
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Мінімальне замовлення: 2000 шт
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| FDBL86561-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| NVMFS5C410NAFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
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| NCS2202SN2T1G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: SOT23-5
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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| 74LVX4245MTCX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Kind of output: 3-state
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MG2040MUTAG |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Application: HDMI
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: uDFN18
Type of diode: TVS array
Number of channels: 14
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; unidirectional; uDFN18; Ch: 14; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Application: HDMI
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: uDFN18
Type of diode: TVS array
Number of channels: 14
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.