| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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SZNUP4301MR6T1G | onsemi |
Description: TVS DIODE SC74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 150°C (TJ) Capacitance @ Frequency: 1.6pF @ 1MHz Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Breakdown (Min): 70V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZSM05T1G | onsemi |
Description: TVS DIODE 5VWM 9.8VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 17A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 9.8V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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SZSMF12CT1G | onsemi |
Description: TVS DIODE 12VWM 23VC SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SC-88/SC70-6/SOT-363 Unidirectional Channels: 5 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 100W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCP1014LEDR2GEVB | onsemi |
Description: EVAL BOARD FOR NCP1014Packaging: Bulk Voltage - Output: 24V Voltage - Input: 90 ~ 265 VAC Contents: Board(s) Current - Output / Channel: 360mA Utilized IC / Part: NCP1014 Supplied Contents: Board(s) Outputs and Type: 1 Isolated Output Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FODM8801A | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tube |
на замовлення 42151 шт: термін постачання 21-31 дні (днів) |
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FODM8801B | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tube |
на замовлення 16778 шт: термін постачання 21-31 дні (днів) |
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FODM8801C | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 3246 шт: термін постачання 21-31 дні (днів) |
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FDD86540 | onsemi |
Description: MOSFET N-CH 60V 21.5A/50A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMC86320 | onsemi |
Description: MOSFET N-CH 80V 10.7A/22A 8MLPTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) FET Type: N-Channel |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMF6820A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFNRds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) Part Status: Last Time Buy Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS Current - Output / Channel: 60A Applications: Synchronous Buck Converters |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS3660S | onsemi |
Description: MOSFET 2N-CH 30V 30A/60A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 60A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMS86300DC | onsemi |
Description: MOSFET N-CH 80V 24A/76A DLCOOL56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS86500DC | onsemi |
Description: MOSFET N-CH 60V 29A DLCOOL56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MDB10S | onsemi |
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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MDB6S | onsemi |
Description: BRIDGE RECT 1P 600V 1A 4MICRODIPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Not For New Designs Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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MDB8S | onsemi |
Description: BRIDGE RECT 1P 800V 1A 4MICRODIPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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S320 | onsemi |
Description: DIODE SCHOTTKY 200V 3A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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FAN3850AUC16X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Supplier Device Package: 6-WLCSP (1.26x0.86) Voltage - Supply: 1.64V ~ 3.63V Operating Temperature: -30°C ~ 85°C (TA) Type: Class AB Mounting Type: Surface Mount Output Type: 1-Channel (Mono) Package / Case: 6-XFBGA, WLCSP Features: ADC, Microphone Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA905P | onsemi |
Description: MOSFET P-CH 12V 10A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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FDMB2307NZ | onsemi |
Description: MOSFET 2N-CH 6MLPPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDME905PT | onsemi |
Description: MOSFET P-CH 12V 8A MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FDD86540 | onsemi |
Description: MOSFET N-CH 60V 21.5A/50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V |
на замовлення 742 шт: термін постачання 21-31 дні (днів) |
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FDMC86320 | onsemi |
Description: MOSFET N-CH 80V 10.7A/22A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
на замовлення 5388 шт: термін постачання 21-31 дні (днів) |
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FDMF6820A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFNFeatures: Bootstrap Circuit, Status Flag Packaging: Cut Tape (CT) Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: DrMOS Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
на замовлення 2268 шт: термін постачання 21-31 дні (днів) |
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FDMS3660S | onsemi |
Description: MOSFET 2N-CH 30V 30A/60A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 60A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
на замовлення 7957 шт: термін постачання 21-31 дні (днів) |
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FDMS86300DC | onsemi |
Description: MOSFET N-CH 80V 24A/76A DLCOOL56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
на замовлення 4941 шт: термін постачання 21-31 дні (днів) |
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FDMS86500DC | onsemi |
Description: MOSFET N-CH 60V 29A DLCOOL56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FSL146MRBN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 67% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Part Status: Active Power (Watts): 35 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FSL206MRBN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 72% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Power (Watts): 12 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MDB10S | onsemi |
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIPPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 62180 шт: термін постачання 21-31 дні (днів) |
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MDB6S | onsemi |
Description: BRIDGE RECT 1P 600V 1A 4MICRODIPPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Not For New Designs Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 81538 шт: термін постачання 21-31 дні (днів) |
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MDB8S | onsemi |
Description: BRIDGE RECT 1P 800V 1A 4MICRODIPPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 27035 шт: термін постачання 21-31 дні (днів) |
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S320 | onsemi |
Description: DIODE SCHOTTKY 200V 3A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V |
на замовлення 54321 шт: термін постачання 21-31 дні (днів) |
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FAN3850AUC16X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Features: ADC, Microphone Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.64V ~ 3.63V Supplier Device Package: 6-WLCSP (1.26x0.86) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA905P | onsemi |
Description: MOSFET P-CH 12V 10A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V |
на замовлення 54118 шт: термін постачання 21-31 дні (днів) |
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FDMB2307NZ | onsemi |
Description: MOSFET 2N-CH 6MLPPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
на замовлення 8875 шт: термін постачання 21-31 дні (днів) |
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FDME905PT | onsemi |
Description: MOSFET P-CH 12V 8A MICROFETPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V |
на замовлення 13924 шт: термін постачання 21-31 дні (днів) |
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FAN9611MX | onsemi |
Description: IC PFC CTRLR BCM 525KHZ 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9V ~ 18V Frequency - Switching: 16.5kHz ~ 525kHz Mode: Boundary Conduction (BCM) Supplier Device Package: 16-SOIC Part Status: Last Time Buy Current - Startup: 80 µA |
на замовлення 184778 шт: термін постачання 21-31 дні (днів) |
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FDB082N15A | onsemi |
Description: MOSFET N-CH 150V 117A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V |
на замовлення 457 шт: термін постачання 21-31 дні (днів) |
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FDMS3600S | onsemi |
Description: MOSFET 2N-CH 25V 15A/30A 8PQFNPackaging: Cut Tape (CT) |
на замовлення 4185 шт: термін постачання 21-31 дні (днів) |
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FDMS3604AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/23A POWER56Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS86500L | onsemi |
Description: MOSFET N-CH 60V 25A/80A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS86520L | onsemi |
Description: MOSFET N CH 60V 13.5A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4582 шт: термін постачання 21-31 дні (днів) |
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FAN156L6X | onsemi |
Description: IC COMPARATOR 1 GEN PUR 6MICROPKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V Supplier Device Package: 6-MicroPak Propagation Delay (Max): 400ns (Typ) Current - Quiescent (Max): 17µA Voltage - Input Offset (Max): 15mV @ 5.5V Current - Input Bias (Max): 10pA @ 5.5V CMRR, PSRR (Typ): 68db CMRR, 80db PSRR Hysteresis: 4mV |
на замовлення 8286 шт: термін постачання 21-31 дні (днів) |
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FCPF380N60 | onsemi |
Description: MOSFET N-CH 600V 10.2A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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FCPF400N60 | onsemi |
Description: MOSFET N-CH 600V 10A TO220FVgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220F-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP083N15A-F102 | onsemi |
Description: MOSFET N-CH 150V 83A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V |
на замовлення 1309 шт: термін постачання 21-31 дні (днів) |
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FGA40N65SMD | onsemi |
Description: IGBT FIELD STOP 650V 80A TO-3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 820µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W |
на замовлення 148 шт: термін постачання 21-31 дні (днів) |
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FGA60N65SMD | onsemi |
Description: IGBT FIELD STOP 650V 120A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/104ns Switching Energy: 1.54mJ (on), 450µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 189 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W |
на замовлення 1913 шт: термін постачання 21-31 дні (днів) |
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FSL176MRTUDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6LPackaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 67% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Supplier Device Package: TO-220F-6L (U-Forming) Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Part Status: Obsolete Power (Watts): 90 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR5H100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 5A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NCV8852DR2G | onsemi |
Description: IC REG CTRLR BUCK 8SOICQualification: AEC-Q100 Number of Outputs: 1 Grade: Automotive Clock Sync: Yes Duty Cycle (Max): 93% Output Phases: 1 Control Features: Enable, Frequency Control Synchronous Rectifier: No Supplier Device Package: 8-SOIC Voltage - Supply (Vcc/Vdd): 3.1V ~ 40V Topology: Buck Frequency - Switching: 100kHz ~ 500kHz Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Function: Step-Down Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NB3RL02FCT2G | onsemi |
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSPPackage / Case: 8-XFBGA, WLCSP Packaging: Tape & Reel (TR) Frequency - Max: 52 MHz Supplier Device Package: 8-WLCSP (1.57x0.77) Differential - Input:Output: No/No Ratio - Input:Output: 1:2 Voltage - Supply: 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Input: Clock Type: Fanout Buffer (Distribution) Output: LVCMOS Mounting Type: Surface Mount Number of Circuits: 1 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCN1188MUTAG | onsemi |
Description: IC USB SWITCH 3:1 AUD/MHL 12UQFNPackaging: Tape & Reel (TR) Features: HDMI, USB 2.0, USB 3.0 Package / Case: 12-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, USB, Video On-State Resistance (Max): 7.5Ohm -3db Bandwidth: 1.8GHz Supplier Device Package: 12-UQFN (1.7x2) Voltage - Supply, Single (V+): 2.7V ~ 5.5V Multiplexer/Demultiplexer Circuit: 3:1 Number of Channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NCP702SN18T1G | onsemi |
Description: IC REG LINEAR 1.8V 200MA 5-TSOPProtection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 5-TSOP Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 16 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP702SN28T1G | onsemi |
Description: IC REG LINEAR 2.8V 200MA 5-TSOPProtection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: 5-TSOP Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 16 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP702SN30T1G | onsemi |
Description: IC REG LINEAR 3V 200MA 5-TSOPProtection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Control Features: Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: 5-TSOP Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 16 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NCP702SN33T1G | onsemi |
Description: IC REG LINEAR 3.3V 200MA 5-TSOPControl Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-TSOP Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 16 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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MBR5H100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 5A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| NB3RL02FCT2G | onsemi |
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSPFrequency - Max: 52 MHz Supplier Device Package: 8-WLCSP (1.57x0.77) Differential - Input:Output: No/No Ratio - Input:Output: 1:2 Voltage - Supply: 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Input: Clock Type: Fanout Buffer (Distribution) Output: LVCMOS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 8-XFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 7585 шт: термін постачання 21-31 дні (днів) |
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| SZNUP4301MR6T1G |
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Виробник: onsemi
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SZSM05T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 9.8VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 9.8VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.47 грн |
| 6000+ | 11.52 грн |
| 9000+ | 10.53 грн |
| SZSMF12CT1G |
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Виробник: onsemi
Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.73 грн |
| NCP1014LEDR2GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCP1014
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 90 ~ 265 VAC
Contents: Board(s)
Current - Output / Channel: 360mA
Utilized IC / Part: NCP1014
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Description: EVAL BOARD FOR NCP1014
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 90 ~ 265 VAC
Contents: Board(s)
Current - Output / Channel: 360mA
Utilized IC / Part: NCP1014
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| FODM8801A |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 42151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.06 грн |
| 10+ | 70.59 грн |
| 100+ | 53.21 грн |
| 500+ | 42.72 грн |
| 1000+ | 40.36 грн |
| 3000+ | 37.33 грн |
| 6000+ | 35.21 грн |
| 12000+ | 33.93 грн |
| FODM8801B |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 16778 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.61 грн |
| 10+ | 71.56 грн |
| 150+ | 51.72 грн |
| 600+ | 42.68 грн |
| 1050+ | 40.81 грн |
| 2100+ | 38.81 грн |
| 5100+ | 36.09 грн |
| 10050+ | 34.77 грн |
| FODM8801C |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 3246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.66 грн |
| 10+ | 83.72 грн |
| 150+ | 61.00 грн |
| 600+ | 50.56 грн |
| 1050+ | 48.42 грн |
| 2100+ | 46.14 грн |
| FDD86540 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FDMC86320 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
FET Type: N-Channel
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 58.48 грн |
| FDMF6820A |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
товару немає в наявності
В кошику
од. на суму грн.
| FDMS3660S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 57.64 грн |
| FDMS86300DC |
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Виробник: onsemi
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 82.34 грн |
| FDMS86500DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 108.47 грн |
| MDB10S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 10.06 грн |
| 10000+ | 8.91 грн |
| 15000+ | 8.52 грн |
| 25000+ | 7.58 грн |
| 35000+ | 7.33 грн |
| 50000+ | 7.29 грн |
| MDB6S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 10.54 грн |
| 10000+ | 9.35 грн |
| MDB8S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 11.60 грн |
| 10000+ | 10.30 грн |
| 15000+ | 9.86 грн |
| 25000+ | 8.78 грн |
| S320 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.79 грн |
| 6000+ | 18.53 грн |
| FAN3850AUC16X |
Виробник: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Supplier Device Package: 6-WLCSP (1.26x0.86)
Voltage - Supply: 1.64V ~ 3.63V
Operating Temperature: -30°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 6-XFBGA, WLCSP
Features: ADC, Microphone
Packaging: Tape & Reel (TR)
Description: IC AMP CLASS AB MONO 6WLCSP
Supplier Device Package: 6-WLCSP (1.26x0.86)
Voltage - Supply: 1.64V ~ 3.63V
Operating Temperature: -30°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 6-XFBGA, WLCSP
Features: ADC, Microphone
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| FDMA905P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.02 грн |
| 6000+ | 14.21 грн |
| FDMB2307NZ |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 28.02 грн |
| 6000+ | 25.06 грн |
| FDME905PT |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 15.36 грн |
| 10000+ | 13.71 грн |
| FDD86540 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
на замовлення 742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.44 грн |
| 10+ | 74.84 грн |
| 100+ | 50.36 грн |
| 500+ | 37.42 грн |
| FDMC86320 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
на замовлення 5388 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.18 грн |
| 10+ | 103.72 грн |
| 100+ | 82.56 грн |
| 500+ | 65.56 грн |
| 1000+ | 55.63 грн |
| FDMF6820A |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
на замовлення 2268 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 364.98 грн |
| 10+ | 233.34 грн |
| 100+ | 166.08 грн |
| 500+ | 128.94 грн |
| 1000+ | 120.30 грн |
| FDMS3660S |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
на замовлення 7957 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.26 грн |
| 10+ | 96.41 грн |
| 100+ | 67.93 грн |
| FDMS86300DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
на замовлення 4941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.75 грн |
| 10+ | 156.85 грн |
| 100+ | 109.86 грн |
| 500+ | 91.08 грн |
| FDMS86500DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 327.01 грн |
| 10+ | 207.97 грн |
| 100+ | 147.41 грн |
| 500+ | 119.98 грн |
| FSL146MRBN |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 35 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 35 W
товару немає в наявності
В кошику
од. на суму грн.
| FSL206MRBN |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 12 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 12 W
товару немає в наявності
В кошику
од. на суму грн.
| MDB10S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 62180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 11+ | 27.54 грн |
| 100+ | 17.71 грн |
| 500+ | 12.63 грн |
| 1000+ | 11.34 грн |
| 2000+ | 10.26 грн |
| MDB6S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 81538 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 31.04 грн |
| 100+ | 19.98 грн |
| 500+ | 14.27 грн |
| 1000+ | 12.82 грн |
| 2000+ | 11.61 грн |
| MDB8S |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 27035 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 31.34 грн |
| 100+ | 20.21 грн |
| 500+ | 14.47 грн |
| 1000+ | 13.03 грн |
| 2000+ | 11.81 грн |
| S320 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
на замовлення 54321 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.34 грн |
| 10+ | 53.35 грн |
| 100+ | 35.17 грн |
| 500+ | 25.66 грн |
| 1000+ | 23.29 грн |
| FAN3850AUC16X |
Виробник: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Features: ADC, Microphone
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Description: IC AMP CLASS AB MONO 6WLCSP
Features: ADC, Microphone
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
товару немає в наявності
В кошику
од. на суму грн.
| FDMA905P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
на замовлення 54118 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.74 грн |
| 10+ | 42.09 грн |
| 100+ | 27.42 грн |
| 500+ | 19.82 грн |
| 1000+ | 17.91 грн |
| FDMB2307NZ |
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Виробник: onsemi
Description: MOSFET 2N-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
Description: MOSFET 2N-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
на замовлення 8875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 65.07 грн |
| 100+ | 43.21 грн |
| 500+ | 31.75 грн |
| 1000+ | 28.92 грн |
| FDME905PT |
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Виробник: onsemi
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
на замовлення 13924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.87 грн |
| 10+ | 39.85 грн |
| 100+ | 26.04 грн |
| 500+ | 18.84 грн |
| 1000+ | 17.04 грн |
| 2000+ | 15.52 грн |
| FAN9611MX |
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Виробник: onsemi
Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Part Status: Last Time Buy
Current - Startup: 80 µA
Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Part Status: Last Time Buy
Current - Startup: 80 µA
на замовлення 184778 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.63 грн |
| 10+ | 91.49 грн |
| 25+ | 83.37 грн |
| 100+ | 69.83 грн |
| 250+ | 65.81 грн |
| 500+ | 63.39 грн |
| 1000+ | 60.39 грн |
| FDB082N15A |
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Виробник: onsemi
Description: MOSFET N-CH 150V 117A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
Description: MOSFET N-CH 150V 117A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 498.27 грн |
| 10+ | 325.42 грн |
| 100+ | 247.74 грн |
| FDMS3600S |
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на замовлення 4185 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.00 грн |
| 10+ | 117.90 грн |
| 100+ | 84.81 грн |
| 500+ | 65.89 грн |
| 1000+ | 61.42 грн |
| FDMS3604AS |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86500L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 25A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V
Description: MOSFET N-CH 60V 25A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.94 грн |
| 10+ | 160.06 грн |
| 100+ | 111.77 грн |
| 500+ | 85.52 грн |
| 1000+ | 85.51 грн |
| FDMS86520L |
![]() |
Виробник: onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N CH 60V 13.5A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4582 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.03 грн |
| 10+ | 126.41 грн |
| 100+ | 87.07 грн |
| 500+ | 65.91 грн |
| 1000+ | 60.83 грн |
| FAN156L6X |
![]() |
Виробник: onsemi
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
на замовлення 8286 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 13+ | 23.06 грн |
| 25+ | 20.54 грн |
| 100+ | 16.76 грн |
| 250+ | 15.56 грн |
| 500+ | 14.83 грн |
| 1000+ | 14.00 грн |
| 2500+ | 13.71 грн |
| FCPF380N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.84 грн |
| 50+ | 123.09 грн |
| FCPF400N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 10A TO220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F-3
Description: MOSFET N-CH 600V 10A TO220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F-3
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| FDP083N15A-F102 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 83A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
Description: MOSFET N-CH 150V 83A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
на замовлення 1309 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.00 грн |
| 50+ | 197.31 грн |
| 100+ | 180.21 грн |
| 500+ | 141.01 грн |
| 1000+ | 135.77 грн |
| FGA40N65SMD |
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Виробник: onsemi
Description: IGBT FIELD STOP 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Description: IGBT FIELD STOP 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 361.88 грн |
| 30+ | 195.95 грн |
| 120+ | 162.44 грн |
| FGA60N65SMD |
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Виробник: onsemi
Description: IGBT FIELD STOP 650V 120A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.54mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Description: IGBT FIELD STOP 650V 120A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.54mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 485.09 грн |
| 30+ | 269.41 грн |
| 120+ | 225.88 грн |
| 510+ | 182.57 грн |
| FSL176MRTUDTU |
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Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 90 W
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 90 W
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| MBR5H100MFST1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 28.93 грн |
| NCV8852DR2G |
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Виробник: onsemi
Description: IC REG CTRLR BUCK 8SOIC
Qualification: AEC-Q100
Number of Outputs: 1
Grade: Automotive
Clock Sync: Yes
Duty Cycle (Max): 93%
Output Phases: 1
Control Features: Enable, Frequency Control
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 3.1V ~ 40V
Topology: Buck
Frequency - Switching: 100kHz ~ 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR BUCK 8SOIC
Qualification: AEC-Q100
Number of Outputs: 1
Grade: Automotive
Clock Sync: Yes
Duty Cycle (Max): 93%
Output Phases: 1
Control Features: Enable, Frequency Control
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 3.1V ~ 40V
Topology: Buck
Frequency - Switching: 100kHz ~ 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| NB3RL02FCT2G |
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Виробник: onsemi
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSP
Package / Case: 8-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Frequency - Max: 52 MHz
Supplier Device Package: 8-WLCSP (1.57x0.77)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Input: Clock
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSP
Package / Case: 8-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Frequency - Max: 52 MHz
Supplier Device Package: 8-WLCSP (1.57x0.77)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Input: Clock
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 33.66 грн |
| NCN1188MUTAG |
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Виробник: onsemi
Description: IC USB SWITCH 3:1 AUD/MHL 12UQFN
Packaging: Tape & Reel (TR)
Features: HDMI, USB 2.0, USB 3.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB, Video
On-State Resistance (Max): 7.5Ohm
-3db Bandwidth: 1.8GHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 3:1
Number of Channels: 2
Description: IC USB SWITCH 3:1 AUD/MHL 12UQFN
Packaging: Tape & Reel (TR)
Features: HDMI, USB 2.0, USB 3.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, USB, Video
On-State Resistance (Max): 7.5Ohm
-3db Bandwidth: 1.8GHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 3:1
Number of Channels: 2
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Мінімальне замовлення: 3000 шт
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| NCP702SN18T1G |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 200MA 5-TSOP
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.8V 200MA 5-TSOP
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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| NCP702SN28T1G |
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Виробник: onsemi
Description: IC REG LINEAR 2.8V 200MA 5-TSOP
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.8V 200MA 5-TSOP
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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| NCP702SN30T1G |
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Виробник: onsemi
Description: IC REG LINEAR 3V 200MA 5-TSOP
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3V 200MA 5-TSOP
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.66 грн |
| 6000+ | 11.85 грн |
| NCP702SN33T1G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 200MA 5-TSOP
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Part Status: Active
Description: IC REG LINEAR 3.3V 200MA 5-TSOP
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 16 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.66 грн |
| 6000+ | 11.85 грн |
| MBR5H100MFST1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.26 грн |
| 10+ | 66.49 грн |
| 100+ | 44.26 грн |
| 500+ | 32.59 грн |
| NB3RL02FCT2G |
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Виробник: onsemi
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSP
Frequency - Max: 52 MHz
Supplier Device Package: 8-WLCSP (1.57x0.77)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Input: Clock
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC CLK BUFFER 1:2 52MHZ 8WLCSP
Frequency - Max: 52 MHz
Supplier Device Package: 8-WLCSP (1.57x0.77)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Input: Clock
Type: Fanout Buffer (Distribution)
Output: LVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 8-XFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 7585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.51 грн |
| 10+ | 78.95 грн |
| 25+ | 66.29 грн |
| 100+ | 48.77 грн |
| 250+ | 42.18 грн |
| 500+ | 38.12 грн |
| 1000+ | 34.14 грн |






























