| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SZMMSZ5267BT1G | onsemi |
Description: DIODE ZENER 75V 500MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 270 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 56 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ5V1T1G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SZNUD3124DMT1G | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 800mOhm (Max) Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SC-74 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SZNUD3124LT1G | onsemi |
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 800mOhm (Max) Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 132000 шт: термін постачання 21-31 дні (днів) |
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SZNUD3160DMT1G | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 1.8Ohm (Max) Voltage - Load: 61V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SC-74 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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SZNUD3160LT1G | onsemi |
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 1.8Ohm (Max) Voltage - Load: 61V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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SZNUP1105LT1G | onsemi |
Description: TVS DIODE 24VWM 44VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 60pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZNUP1301ML3T1G | onsemi |
Description: TVS DIODE SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 0.9pF @ 1MHz Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 1 Voltage - Breakdown (Min): 70V Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SZNUP2105LT1G | onsemi |
Description: TVS DIODE 24VWM 44VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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SZNUP2105LT3G | onsemi |
Description: TVS DIODE 24VWM 44VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZNUP2301MW6T1G | onsemi |
Description: TVS DIODE SC88/SC706/SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 1.6pF @ 1MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Unidirectional Channels: 2 Voltage - Breakdown (Min): 70V Power Line Protection: No Part Status: Active Bidirectional Channels: 2 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZNUP4114HMR6T1G | onsemi |
Description: TVS DIODE 5.5VWM 10VC 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: Yes Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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SZNUP4301MR6T1G | onsemi |
Description: TVS DIODE SC74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 150°C (TJ) Capacitance @ Frequency: 1.6pF @ 1MHz Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Breakdown (Min): 70V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZSM05T1G | onsemi |
Description: TVS DIODE 5VWM 9.8VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 17A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 9.8V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SZSMF12CT1G | onsemi |
Description: TVS DIODE 12VWM 23VC SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SC-88/SC70-6/SOT-363 Unidirectional Channels: 5 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 100W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCP1014LEDR2GEVB | onsemi |
Description: EVAL BOARD FOR NCP1014Packaging: Bulk Voltage - Output: 24V Voltage - Input: 90 ~ 265 VAC Contents: Board(s) Current - Output / Channel: 360mA Utilized IC / Part: NCP1014 Supplied Contents: Board(s) Outputs and Type: 1 Isolated Output Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FODM8801A | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 80% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 160% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 42151 шт: термін постачання 21-31 дні (днів) |
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FODM8801B | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 16778 шт: термін постачання 21-31 дні (днів) |
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FODM8801C | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 5915 шт: термін постачання 21-31 дні (днів) |
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FDD86540 | onsemi |
Description: MOSFET N-CH 60V 21.5A/50A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMC86320 | onsemi |
Description: MOSFET N-CH 80V 10.7A/22A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMF6820A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFNPackaging: Tape & Reel (TR) Features: Bootstrap Circuit, Status Flag Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: DrMOS Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS3660S | onsemi |
Description: MOSFET 2N-CH 30V 30A/60A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 60A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMS86300DC | onsemi |
Description: MOSFET N-CH 80V 24A/76A DLCOOL56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMS86500DC | onsemi |
Description: MOSFET N-CH 60V 29A DLCOOL56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MDB10S | onsemi |
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
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MDB6S | onsemi |
Description: BRIDGE RECT 1P 600V 1A 4MICRODIPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Not For New Designs Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MDB8S | onsemi |
Description: BRIDGE RECT 1P 800V 1A 4MICRODIPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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S320 | onsemi |
Description: DIODE SCHOTTKY 200V 3A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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FAN3850AUC16X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Packaging: Tape & Reel (TR) Features: ADC, Microphone Package / Case: 6-XFBGA, WLCSP Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.64V ~ 3.63V Supplier Device Package: 6-WLCSP (1.26x0.86) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA905P | onsemi |
Description: MOSFET P-CH 12V 10A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V |
на замовлення 8676 шт: термін постачання 21-31 дні (днів) |
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FDMB2307NZ | onsemi |
Description: MOSFET 2N-CH 6MLPPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDME905PT | onsemi |
Description: MOSFET P-CH 12V 8A MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FDD86540 | onsemi |
Description: MOSFET N-CH 60V 21.5A/50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V |
на замовлення 15174 шт: термін постачання 21-31 дні (днів) |
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FDMC86320 | onsemi |
Description: MOSFET N-CH 80V 10.7A/22A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V |
на замовлення 5388 шт: термін постачання 21-31 дні (днів) |
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FDMF6820A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFNPackaging: Cut Tape (CT) Features: Bootstrap Circuit, Status Flag Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: DrMOS Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
на замовлення 2268 шт: термін постачання 21-31 дні (днів) |
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FDMS3660S | onsemi |
Description: MOSFET 2N-CH 30V 30A/60A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A, 60A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
на замовлення 7957 шт: термін постачання 21-31 дні (днів) |
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FDMS86300DC | onsemi |
Description: MOSFET N-CH 80V 24A/76A DLCOOL56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
на замовлення 5046 шт: термін постачання 21-31 дні (днів) |
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FDMS86500DC | onsemi |
Description: MOSFET N-CH 60V 29A DLCOOL56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V |
на замовлення 4888 шт: термін постачання 21-31 дні (днів) |
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FSL146MRBN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 67% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Part Status: Active Power (Watts): 35 W |
на замовлення 468 шт: термін постачання 21-31 дні (днів) |
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FSL206MRBN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 72% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Power (Watts): 12 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MDB10S | onsemi |
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIPPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 65139 шт: термін постачання 21-31 дні (днів) |
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MDB6S | onsemi |
Description: BRIDGE RECT 1P 600V 1A 4MICRODIPPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Not For New Designs Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 9451 шт: термін постачання 21-31 дні (днів) |
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MDB8S | onsemi |
Description: BRIDGE RECT 1P 800V 1A 4MICRODIPPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-MicroDIP/SMD Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 27035 шт: термін постачання 21-31 дні (днів) |
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S320 | onsemi |
Description: DIODE SCHOTTKY 200V 3A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 7 µA @ 200 V |
на замовлення 97598 шт: термін постачання 21-31 дні (днів) |
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FAN3850AUC16X | onsemi |
Description: IC AMP CLASS AB MONO 6WLCSP Packaging: Cut Tape (CT) Features: ADC, Microphone Package / Case: 6-XFBGA, WLCSP Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.64V ~ 3.63V Supplier Device Package: 6-WLCSP (1.26x0.86) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA905P | onsemi |
Description: MOSFET P-CH 12V 10A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V |
на замовлення 8676 шт: термін постачання 21-31 дні (днів) |
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FDMB2307NZ | onsemi |
Description: MOSFET 2N-CH 6MLPPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V FET Feature: Logic Level Gate Supplier Device Package: 6-MLP (2x3) |
на замовлення 8875 шт: термін постачання 21-31 дні (днів) |
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FDME905PT | onsemi |
Description: MOSFET P-CH 12V 8A MICROFETPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V |
на замовлення 9358 шт: термін постачання 21-31 дні (днів) |
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FAN9611MX | onsemi |
Description: IC PFC CTRLR BCM 525KHZ 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9V ~ 18V Frequency - Switching: 16.5kHz ~ 525kHz Mode: Boundary Conduction (BCM) Supplier Device Package: 16-SOIC Part Status: Last Time Buy Current - Startup: 80 µA |
на замовлення 24677 шт: термін постачання 21-31 дні (днів) |
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FDB082N15A | onsemi |
Description: MOSFET N-CH 150V 117A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V |
на замовлення 1432 шт: термін постачання 21-31 дні (днів) |
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FDMS3600S | onsemi |
Description: MOSFET 2N-CH 25V 15A/30A 8PQFNPackaging: Cut Tape (CT) |
на замовлення 4185 шт: термін постачання 21-31 дні (днів) |
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FDMS3604AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/23A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS86500L | onsemi |
Description: MOSFET N-CH 60V 25A/80A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V |
на замовлення 7875 шт: термін постачання 21-31 дні (днів) |
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FDMS86520L | onsemi |
Description: MOSFET N CH 60V 13.5A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V |
на замовлення 4582 шт: термін постачання 21-31 дні (днів) |
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FAN156L6X | onsemi |
Description: IC COMPARATOR 1 GEN PUR 6MICROPKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V Supplier Device Package: 6-MicroPak Propagation Delay (Max): 400ns (Typ) Current - Quiescent (Max): 17µA Voltage - Input Offset (Max): 15mV @ 5.5V Current - Input Bias (Max): 10pA @ 5.5V CMRR, PSRR (Typ): 68db CMRR, 80db PSRR Hysteresis: 4mV |
на замовлення 20344 шт: термін постачання 21-31 дні (днів) |
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FCPF380N60 | onsemi |
Description: MOSFET N-CH 600V 10.2A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
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FCPF400N60 | onsemi |
Description: MOSFET N-CH 600V 10A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP083N15A-F102 | onsemi |
Description: MOSFET N-CH 150V 83A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V |
на замовлення 2095 шт: термін постачання 21-31 дні (днів) |
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FGA40N65SMD | onsemi |
Description: IGBT FIELD STOP 650V 80A TO-3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 820µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W |
на замовлення 194 шт: термін постачання 21-31 дні (днів) |
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| SZMMSZ5267BT1G |
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Виробник: onsemi
Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.96 грн |
| 6000+ | 3.43 грн |
| 9000+ | 3.08 грн |
| SZMMSZ5V1T1G |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.90 грн |
| SZNUD3124DMT1G |
![]() |
Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.12 грн |
| 6000+ | 12.28 грн |
| 9000+ | 12.10 грн |
| 15000+ | 11.18 грн |
| 21000+ | 11.07 грн |
| 30000+ | 10.97 грн |
| SZNUD3124LT1G |
![]() |
Виробник: onsemi
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 132000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.65 грн |
| 6000+ | 14.67 грн |
| 9000+ | 14.46 грн |
| 15000+ | 13.36 грн |
| 21000+ | 13.24 грн |
| 30000+ | 13.12 грн |
| SZNUD3160DMT1G |
![]() |
Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.17 грн |
| 6000+ | 17.04 грн |
| 9000+ | 16.81 грн |
| 15000+ | 15.54 грн |
| 21000+ | 15.40 грн |
| 30000+ | 15.27 грн |
| SZNUD3160LT1G |
![]() |
Виробник: onsemi
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.65 грн |
| 6000+ | 14.67 грн |
| 9000+ | 14.46 грн |
| 15000+ | 13.36 грн |
| 21000+ | 13.24 грн |
| 30000+ | 13.12 грн |
| SZNUP1105LT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SZNUP1301ML3T1G |
![]() |
Виробник: onsemi
Description: TVS DIODE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.9pF @ 1MHz
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.9pF @ 1MHz
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.70 грн |
| 6000+ | 5.38 грн |
| SZNUP2105LT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.53 грн |
| 6000+ | 5.48 грн |
| 9000+ | 4.28 грн |
| 15000+ | 3.72 грн |
| 21000+ | 3.65 грн |
| SZNUP2105LT3G |
![]() |
Виробник: onsemi
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SZNUP2301MW6T1G |
![]() |
Виробник: onsemi
Description: TVS DIODE SC88/SC706/SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
Bidirectional Channels: 2
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE SC88/SC706/SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Part Status: Active
Bidirectional Channels: 2
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SZNUP4114HMR6T1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 29.24 грн |
| SZNUP4301MR6T1G |
![]() |
Виробник: onsemi
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SZSM05T1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5VWM 9.8VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 9.8VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.34 грн |
| SZSMF12CT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 23VC SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 5
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 100W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.24 грн |
| NCP1014LEDR2GEVB |
![]() |
Виробник: onsemi
Description: EVAL BOARD FOR NCP1014
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 90 ~ 265 VAC
Contents: Board(s)
Current - Output / Channel: 360mA
Utilized IC / Part: NCP1014
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Description: EVAL BOARD FOR NCP1014
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 90 ~ 265 VAC
Contents: Board(s)
Current - Output / Channel: 360mA
Utilized IC / Part: NCP1014
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
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од. на суму грн.
| FODM8801A |
![]() |
Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 80% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 160% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 42151 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 110.39 грн |
| 10+ | 75.61 грн |
| 100+ | 57.00 грн |
| 500+ | 45.75 грн |
| 1000+ | 43.23 грн |
| 3000+ | 39.99 грн |
| 6000+ | 37.72 грн |
| 12000+ | 36.35 грн |
| FODM8801B |
![]() |
Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 16778 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.05 грн |
| 10+ | 76.65 грн |
| 150+ | 55.40 грн |
| 600+ | 45.71 грн |
| 1050+ | 43.71 грн |
| 2100+ | 41.57 грн |
| 5100+ | 38.65 грн |
| 10050+ | 37.24 грн |
| FODM8801C |
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Виробник: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 5915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.14 грн |
| 10+ | 90.40 грн |
| 150+ | 65.90 грн |
| 600+ | 54.62 грн |
| 1050+ | 52.31 грн |
| 2100+ | 49.85 грн |
| 5100+ | 46.47 грн |
| FDD86540 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 79.85 грн |
| FDMC86320 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 62.64 грн |
| FDMF6820A |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| FDMS3660S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 61.74 грн |
| FDMS86300DC |
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Виробник: onsemi
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 88.96 грн |
| FDMS86500DC |
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Виробник: onsemi
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 116.60 грн |
| MDB10S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 11.02 грн |
| 10000+ | 9.76 грн |
| 15000+ | 9.33 грн |
| 25000+ | 8.30 грн |
| 35000+ | 8.03 грн |
| 50000+ | 7.99 грн |
| MDB6S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 11.47 грн |
| MDB8S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 12.43 грн |
| 10000+ | 11.03 грн |
| 15000+ | 10.56 грн |
| 25000+ | 9.41 грн |
| S320 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.45 грн |
| 6000+ | 19.25 грн |
| FAN3850AUC16X |
Виробник: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Tape & Reel (TR)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Tape & Reel (TR)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
товару немає в наявності
В кошику
од. на суму грн.
| FDMA905P |
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Виробник: onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
на замовлення 8676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.90 грн |
| 6000+ | 15.24 грн |
| FDMB2307NZ |
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Виробник: onsemi
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
Description: MOSFET 2N-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 30.01 грн |
| 6000+ | 26.84 грн |
| FDME905PT |
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Виробник: onsemi
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.71 грн |
| FDD86540 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
Description: MOSFET N-CH 60V 21.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 21.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 30 V
на замовлення 15174 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.34 грн |
| 10+ | 154.98 грн |
| 100+ | 107.53 грн |
| 500+ | 81.88 грн |
| 1000+ | 75.77 грн |
| FDMC86320 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Description: MOSFET N-CH 80V 10.7A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.7A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
на замовлення 5388 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.44 грн |
| 10+ | 111.10 грн |
| 100+ | 88.43 грн |
| 500+ | 70.22 грн |
| 1000+ | 59.58 грн |
| FDMF6820A |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
на замовлення 2268 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 390.94 грн |
| 10+ | 249.93 грн |
| 100+ | 177.89 грн |
| 500+ | 138.11 грн |
| 1000+ | 128.85 грн |
| FDMS3660S |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 30A/60A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
на замовлення 7957 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.23 грн |
| 10+ | 103.27 грн |
| 100+ | 72.77 грн |
| FDMS86300DC |
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Виробник: onsemi
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
Description: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
на замовлення 5046 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 268.92 грн |
| 10+ | 169.45 грн |
| 100+ | 118.68 грн |
| 500+ | 98.40 грн |
| FDMS86500DC |
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Виробник: onsemi
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
Description: MOSFET N-CH 60V 29A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 29A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7680 pF @ 30 V
на замовлення 4888 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 328.69 грн |
| 10+ | 208.93 грн |
| 100+ | 148.10 грн |
| 500+ | 128.98 грн |
| FSL146MRBN |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 35 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Part Status: Active
Power (Watts): 35 W
на замовлення 468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.83 грн |
| 10+ | 144.51 грн |
| 50+ | 136.31 грн |
| 100+ | 102.33 грн |
| 250+ | 89.54 грн |
| FSL206MRBN |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 12 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 12 W
товару немає в наявності
В кошику
од. на суму грн.
| MDB10S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 65139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.63 грн |
| 11+ | 30.13 грн |
| 100+ | 19.41 грн |
| 500+ | 13.84 грн |
| 1000+ | 12.43 грн |
| 2000+ | 11.25 грн |
| MDB6S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 9451 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.29 грн |
| 11+ | 31.25 грн |
| 100+ | 20.13 грн |
| 500+ | 14.38 грн |
| 1000+ | 12.92 грн |
| 2000+ | 11.70 грн |
| MDB8S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1A 4MICRODIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIP/SMD
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 27035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.61 грн |
| 10+ | 33.57 грн |
| 100+ | 21.65 грн |
| 500+ | 15.50 грн |
| 1000+ | 13.95 грн |
| 2000+ | 12.65 грн |
| S320 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
Description: DIODE SCHOTTKY 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 7 µA @ 200 V
на замовлення 97598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.48 грн |
| 11+ | 31.65 грн |
| 100+ | 29.52 грн |
| 500+ | 25.55 грн |
| 1000+ | 24.05 грн |
| FAN3850AUC16X |
Виробник: onsemi
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Cut Tape (CT)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
Description: IC AMP CLASS AB MONO 6WLCSP
Packaging: Cut Tape (CT)
Features: ADC, Microphone
Package / Case: 6-XFBGA, WLCSP
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.64V ~ 3.63V
Supplier Device Package: 6-WLCSP (1.26x0.86)
товару немає в наявності
В кошику
од. на суму грн.
| FDMA905P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
на замовлення 8676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.99 грн |
| 11+ | 31.73 грн |
| 100+ | 23.83 грн |
| 500+ | 17.36 грн |
| 1000+ | 16.55 грн |
| FDMB2307NZ |
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Виробник: onsemi
Description: MOSFET 2N-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
Description: MOSFET 2N-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MLP (2x3)
на замовлення 8875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.54 грн |
| 10+ | 69.70 грн |
| 100+ | 46.29 грн |
| 500+ | 34.01 грн |
| 1000+ | 30.98 грн |
| FDME905PT |
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Виробник: onsemi
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
на замовлення 9358 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.21 грн |
| 10+ | 43.40 грн |
| 100+ | 28.32 грн |
| 500+ | 20.50 грн |
| 1000+ | 18.50 грн |
| 2000+ | 16.89 грн |
| FAN9611MX |
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Виробник: onsemi
Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Part Status: Last Time Buy
Current - Startup: 80 µA
Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Part Status: Last Time Buy
Current - Startup: 80 µA
на замовлення 24677 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.85 грн |
| 10+ | 149.62 грн |
| 25+ | 127.21 грн |
| 100+ | 95.51 грн |
| 250+ | 83.79 грн |
| 500+ | 76.58 грн |
| 1000+ | 69.39 грн |
| FDB082N15A |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 117A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
Description: MOSFET N-CH 150V 117A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 420.82 грн |
| 10+ | 336.57 грн |
| 100+ | 262.71 грн |
| FDMS3600S |
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на замовлення 4185 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.73 грн |
| 10+ | 126.29 грн |
| 100+ | 90.85 грн |
| 500+ | 70.57 грн |
| 1000+ | 65.79 грн |
| FDMS3604AS |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
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В кошику
од. на суму грн.
| FDMS86500L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 25A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V
Description: MOSFET N-CH 60V 25A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12530 pF @ 30 V
на замовлення 7875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.51 грн |
| 10+ | 154.90 грн |
| 100+ | 107.93 грн |
| 500+ | 87.54 грн |
| FDMS86520L |
![]() |
Виробник: onsemi
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
Description: MOSFET N CH 60V 13.5A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 30 V
на замовлення 4582 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.46 грн |
| 10+ | 135.40 грн |
| 100+ | 93.26 грн |
| 500+ | 70.60 грн |
| 1000+ | 65.15 грн |
| FAN156L6X |
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Виробник: onsemi
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
на замовлення 20344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.53 грн |
| 10+ | 42.92 грн |
| 25+ | 35.58 грн |
| 100+ | 25.82 грн |
| 250+ | 22.20 грн |
| 500+ | 20.02 грн |
| 1000+ | 17.92 грн |
| 2500+ | 16.04 грн |
| FCPF380N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.00 грн |
| 50+ | 129.91 грн |
| FCPF400N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FDP083N15A-F102 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 83A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
Description: MOSFET N-CH 150V 83A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V
на замовлення 2095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 419.99 грн |
| 50+ | 213.07 грн |
| 100+ | 194.60 грн |
| 500+ | 152.27 грн |
| 1000+ | 146.62 грн |
| FGA40N65SMD |
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Виробник: onsemi
Description: IGBT FIELD STOP 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Description: IGBT FIELD STOP 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 820µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
на замовлення 194 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 390.94 грн |
| 30+ | 211.62 грн |
| 120+ | 175.42 грн |


























