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MC74ACT32DTR2G MC74ACT32DTR2G ONSEMI mc74ac32-d.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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74VHCT08AMTCX 74VHCT08AMTCX ONSEMI FAIRS26049-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: AND
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 2
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74VHCT08AMX 74VHCT08AMX ONSEMI FAIRS26049-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: AND
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
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CAT25256VI-GT3 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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FQD12N20LTM-F085 FQD12N20LTM-F085 ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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FCH165N65S3R0-F155 ONSEMI fch165n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Mounting: THT
Case: TO247
Drain-source voltage: 650V
Drain current: 12.3A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 154W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 47.5A
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FDP20N50 FDP20N50 ONSEMI FDP20N50F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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2N5038G 2N5038G ONSEMI 2n5038-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 20A; 140W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 20A
Case: TO3
Mounting: THT
Frequency: 60MHz
Power: 140W
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ALS-GEVB ONSEMI ALS-GEVB_Web.pdf Category: Development kits - others
Description: Expansion board; prototype board; Comp: NOA1305
Kit contents: prototype board
Interface: I2C
Kind of connector: Pmod connector
Components: NOA1305
Type of accessories for development kits: expansion board
development kits accessories features: light sensor
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RSL10-002GEVB ONSEMI rsl10-d.pdf Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Kit contents: prototype board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Programmers and development kits features: Bluetooth board
Components: RSL10
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BLE-IOT-GEVB ONSEMI Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: ATSAM3U2CA,RSL10
Type of development kit: evaluation
Kit contents: prototype board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Programmers and development kits features: Bluetooth board
Components: ATSAM3U2CA; RSL10
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TS-GEVB ONSEMI TS-GEVB_Web.pdf Category: Development kits - others
Description: Expansion board; prototype board; Comp: LC717A00AR
Kit contents: prototype board
Interface: I2C; I2C - Slave; SPI
Kind of connector: Pmod connector
Components: LC717A00AR
Type of accessories for development kits: expansion board
development kits accessories features: Arduino compatible; capacitive keypad
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FDP42AN15A0 FDP42AN15A0 ONSEMI FDP42AN15A0.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Drain current: 24A
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
3+167.53 грн
9+108.82 грн
24+102.69 грн
Мінімальне замовлення: 3
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SZMMBZ20VALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 20V
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 17V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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MC100EP52DTG MC100EP52DTG ONSEMI mc10ep52-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Supply voltage: 3.3...5V DC
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
1+670.96 грн
2+515.74 грн
5+487.39 грн
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KSE44H11 ONSEMI KSE44H.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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SZ1SMB5925BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MMSZ5222BT1G MMSZ5222BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2261 шт:
термін постачання 21-30 дні (днів)
36+11.55 грн
47+8.20 грн
71+5.43 грн
100+4.50 грн
401+2.28 грн
1103+2.16 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
MMSZ5235BT1G MMSZ5235BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 5890 шт:
термін постачання 21-30 дні (днів)
55+7.51 грн
84+4.60 грн
99+3.91 грн
132+2.90 грн
489+1.88 грн
1342+1.78 грн
3000+1.76 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
MMSZ5250BT1G MMSZ5250BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 20V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Mounting: SMD
на замовлення 5075 шт:
термін постачання 21-30 дні (днів)
42+9.90 грн
66+5.82 грн
100+3.83 грн
121+3.18 грн
500+2.09 грн
507+1.80 грн
1000+1.75 грн
1394+1.70 грн
1500+1.64 грн
Мінімальне замовлення: 42
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NSVBAS21AHT1G ONSEMI bas21aht1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Application: automotive industry
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FDB2710 FDB2710 ONSEMI FDB2710.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 101nC
на замовлення 796 шт:
термін постачання 21-30 дні (днів)
2+235.21 грн
6+203.85 грн
24+198.48 грн
Мінімальне замовлення: 2
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FDB52N20TM FDB52N20TM ONSEMI FDB52N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 63nC
на замовлення 558 шт:
термін постачання 21-30 дні (днів)
3+150.20 грн
5+124.15 грн
9+108.05 грн
24+102.69 грн
Мінімальне замовлення: 3
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FSL306LRLX ONSEMI fsl306lr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: LSOP7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: reel; tape
Power: 3/7W
Application: SMPS
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FSL306LRN ONSEMI fsl306lr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: tube
Power: 3/7W
Application: SMPS
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NTHL082N65S3F ONSEMI NTHL082N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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BAW56M3T5G ONSEMI baw56m3-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAW56LT3G SBAW56LT3G ONSEMI baw56lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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FDMC86570L ONSEMI fdmc86570l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 416A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 416A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86570LET60 ONSEMI fdmc86570let60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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SZMMSZ4707T1G ONSEMI MMSZ4xxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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SZTVS4201MR6T1G ONSEMI tvs4201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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NRVBS4201T3G ONSEMI mbrs4201t3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SMC
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 100A
Max. forward voltage: 0.86V
Load current: 4A
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FDMC86324 FDMC86324 ONSEMI FDMC86324.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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FDMC86320 ONSEMI fdmc86320-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
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SZBZX84B4V7LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
Application: automotive industry
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KSD560YTU KSD560YTU ONSEMI KSD560YTU.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector current: 5A
Power dissipation: 1.5W
Polarisation: bipolar
Collector-emitter voltage: 100V
Type of transistor: NPN
Case: TO220AB
Mounting: THT
Kind of transistor: Darlington
Kind of package: tube
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KSD1588YTU ONSEMI KSD1588.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Pulsed collector current: 15A
Type of transistor: NPN
Collector current: 7A
Power dissipation: 30W
Polarisation: bipolar
Kind of package: tube
Current gain: 100...200
Collector-emitter voltage: 60V
Case: TO220FP
Mounting: THT
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KSD1692YS KSD1692YS ONSEMI KSD1692YS.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Type of transistor: NPN
Collector current: 3A
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Current gain: 4000...12000
Collector-emitter voltage: 100V
Case: TO126ISO
Kind of transistor: Darlington
Mounting: THT
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FQP16N25 FQP16N25 ONSEMI fqp16n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
On-state resistance: 0.23Ω
Drain current: 10A
Drain-source voltage: 250V
Kind of channel: enhancement
Gate-source voltage: ±30V
Polarisation: unipolar
Pulsed drain current: 64A
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FQPF16N25C FQPF16N25C ONSEMI fqp16n25c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
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MC74LCX16244DTG MC74LCX16244DTG ONSEMI mc74lcx16244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
5+79.70 грн
14+64.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDMC86244 ONSEMI fdmc86244-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Case: WDFN8
Drain-source voltage: 150V
Drain current: 9.4A
On-state resistance: 254mΩ
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
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74LCX16244MTD 74LCX16244MTD ONSEMI 74LCX16244.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Part status: Not recommended for new designs
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Quiescent current: 20µA
Kind of output: 3-state
Operating temperature: -40...85°C
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MC74LVXC3245DTRG MC74LVXC3245DTRG ONSEMI MC74LVXC3245.pdf Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
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MMBZ18VALT1G MMBZ18VALT1G ONSEMI MMBZ_ser.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; ±5%
Max. off-state voltage: 14.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.6A
Breakdown voltage: 18V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Tolerance: ±5%
на замовлення 6600 шт:
термін постачання 21-30 дні (днів)
39+10.73 грн
57+6.82 грн
83+4.63 грн
100+3.89 грн
542+1.69 грн
1488+1.59 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SZMMBZ18VALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; ±5%
Application: automotive industry
Max. off-state voltage: 14.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.6A
Breakdown voltage: 18V
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Tolerance: ±5%
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FDN337N FDN337N ONSEMI FDN337N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4523 шт:
термін постачання 21-30 дні (днів)
12+34.66 грн
23+17.32 грн
100+12.95 грн
145+6.21 грн
397+5.90 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SB5100 SB5100 ONSEMI SB5100%20N0092%20REV.B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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CAT25256XI-T2 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 ONSEMI CAT25256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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2N7002W 2N7002W ONSEMI 2N7002W-FAI.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1089 шт:
термін постачання 21-30 дні (днів)
17+24.76 грн
32+12.34 грн
100+7.59 грн
183+4.98 грн
502+4.75 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MBRA210LT3G ONSEMI mbra210lt3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.26V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 10V
Case: SMA
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FDPF12N50T FDPF12N50T ONSEMI FDP12N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
3+140.30 грн
4+117.25 грн
10+89.66 грн
28+84.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NCP10970B1DR2G NCP10970B1DR2G ONSEMI Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 7÷20VDC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck
Case: SO16
Operating voltage: 7...20V DC
Frequency: 59...71kHz
On-state resistance: 23Ω
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MOC3073M MOC3073M ONSEMI MOC3071M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Manufacturer series: MOC3073M
Mounting: THT
на замовлення 398 шт:
термін постачання 21-30 дні (днів)
4+115.54 грн
10+68.97 грн
17+54.79 грн
45+51.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MMBTA14 ONSEMI MMBTA14.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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MC14040BDG MC14040BDG ONSEMI MC14040B-D.pdf Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 12bit; binary counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Operating temperature: -55...125°C
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MC14040BDR2G MC14040BDR2G ONSEMI mc14040b-d.pdf Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 12bit; binary counter
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
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MC14040BDTR2G ONSEMI MC14040B-D.pdf Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 12bit; binary counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC74ACT32DTR2G mc74ac32-d.pdf
MC74ACT32DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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74VHCT08AMTCX FAIRS26049-1.pdf?t.download=true&u=5oefqw
74VHCT08AMTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: AND
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 2
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74VHCT08AMX FAIRS26049-1.pdf?t.download=true&u=5oefqw
74VHCT08AMX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: AND
Family: VHCT
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
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CAT25256VI-GT3 CAT25256-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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FQD12N20LTM-F085 fqd12n20l-d.pdf
FQD12N20LTM-F085
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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FCH165N65S3R0-F155 fch165n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Mounting: THT
Case: TO247
Drain-source voltage: 650V
Drain current: 12.3A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 154W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 47.5A
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FDP20N50 FDP20N50F.pdf
FDP20N50
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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2N5038G 2n5038-d.pdf
2N5038G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 20A; 140W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 20A
Case: TO3
Mounting: THT
Frequency: 60MHz
Power: 140W
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ALS-GEVB ALS-GEVB_Web.pdf
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NOA1305
Kit contents: prototype board
Interface: I2C
Kind of connector: Pmod connector
Components: NOA1305
Type of accessories for development kits: expansion board
development kits accessories features: light sensor
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RSL10-002GEVB rsl10-d.pdf
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Type of development kit: evaluation
Kit contents: prototype board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Programmers and development kits features: Bluetooth board
Components: RSL10
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BLE-IOT-GEVB
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: ATSAM3U2CA,RSL10
Type of development kit: evaluation
Kit contents: prototype board
Interface: GPIO; I2C; SPI; UART
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Programmers and development kits features: Bluetooth board
Components: ATSAM3U2CA; RSL10
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TS-GEVB TS-GEVB_Web.pdf
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LC717A00AR
Kit contents: prototype board
Interface: I2C; I2C - Slave; SPI
Kind of connector: Pmod connector
Components: LC717A00AR
Type of accessories for development kits: expansion board
development kits accessories features: Arduino compatible; capacitive keypad
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FDP42AN15A0 FDP42AN15A0.pdf
FDP42AN15A0
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Drain current: 24A
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+167.53 грн
9+108.82 грн
24+102.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SZMMBZ20VALT1G mmbz5v6alt1-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 20V
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 17V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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MC100EP52DTG mc10ep52-d.pdf
MC100EP52DTG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Supply voltage: 3.3...5V DC
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+670.96 грн
2+515.74 грн
5+487.39 грн
В кошику  од. на суму  грн.
KSE44H11 KSE44H.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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SZ1SMB5925BT3G 1SMB59xxBT3G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MMSZ5222BT1G MMSZ52xxT1G.PDF
MMSZ5222BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.55 грн
47+8.20 грн
71+5.43 грн
100+4.50 грн
401+2.28 грн
1103+2.16 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
MMSZ5235BT1G MMSZ52xxT1G.PDF
MMSZ5235BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 5890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.51 грн
84+4.60 грн
99+3.91 грн
132+2.90 грн
489+1.88 грн
1342+1.78 грн
3000+1.76 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
MMSZ5250BT1G MMSZ52xxT1G.PDF
MMSZ5250BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 20V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Mounting: SMD
на замовлення 5075 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+9.90 грн
66+5.82 грн
100+3.83 грн
121+3.18 грн
500+2.09 грн
507+1.80 грн
1000+1.75 грн
1394+1.70 грн
1500+1.64 грн
Мінімальне замовлення: 42
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NSVBAS21AHT1G bas21aht1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Application: automotive industry
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FDB2710 FDB2710.pdf
FDB2710
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 101nC
на замовлення 796 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+235.21 грн
6+203.85 грн
24+198.48 грн
Мінімальне замовлення: 2
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FDB52N20TM FDB52N20.pdf
FDB52N20TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 63nC
на замовлення 558 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+150.20 грн
5+124.15 грн
9+108.05 грн
24+102.69 грн
Мінімальне замовлення: 3
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FSL306LRLX fsl306lr-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: LSOP7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: reel; tape
Power: 3/7W
Application: SMPS
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FSL306LRN fsl306lr-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: tube
Power: 3/7W
Application: SMPS
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NTHL082N65S3F NTHL082N65S3F.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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BAW56M3T5G baw56m3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAW56LT3G baw56lt1-d.pdf
SBAW56LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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FDMC86570L fdmc86570l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 416A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 416A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86570LET60 fdmc86570let60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
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SZMMSZ4707T1G MMSZ4xxxT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 10nA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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SZTVS4201MR6T1G tvs4201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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NRVBS4201T3G mbrs4201t3-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Case: SMC
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 100A
Max. forward voltage: 0.86V
Load current: 4A
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FDMC86324 FDMC86324.pdf
FDMC86324
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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FDMC86320 fdmc86320-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
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SZBZX84B4V7LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
Application: automotive industry
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KSD560YTU KSD560YTU.pdf
KSD560YTU
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector current: 5A
Power dissipation: 1.5W
Polarisation: bipolar
Collector-emitter voltage: 100V
Type of transistor: NPN
Case: TO220AB
Mounting: THT
Kind of transistor: Darlington
Kind of package: tube
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KSD1588YTU KSD1588.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Pulsed collector current: 15A
Type of transistor: NPN
Collector current: 7A
Power dissipation: 30W
Polarisation: bipolar
Kind of package: tube
Current gain: 100...200
Collector-emitter voltage: 60V
Case: TO220FP
Mounting: THT
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KSD1692YS KSD1692YS.pdf
KSD1692YS
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Type of transistor: NPN
Collector current: 3A
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Current gain: 4000...12000
Collector-emitter voltage: 100V
Case: TO126ISO
Kind of transistor: Darlington
Mounting: THT
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FQP16N25 fqp16n25-d.pdf
FQP16N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
On-state resistance: 0.23Ω
Drain current: 10A
Drain-source voltage: 250V
Kind of channel: enhancement
Gate-source voltage: ±30V
Polarisation: unipolar
Pulsed drain current: 64A
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FQPF16N25C fqp16n25c-d.pdf
FQPF16N25C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
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MC74LCX16244DTG mc74lcx16244-d.pdf
MC74LCX16244DTG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+79.70 грн
14+64.37 грн
Мінімальне замовлення: 5
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FDMC86244 fdmc86244-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Case: WDFN8
Drain-source voltage: 150V
Drain current: 9.4A
On-state resistance: 254mΩ
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Mounting: SMD
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74LCX16244MTD 74LCX16244.pdf
74LCX16244MTD
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Part status: Not recommended for new designs
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Quiescent current: 20µA
Kind of output: 3-state
Operating temperature: -40...85°C
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MC74LVXC3245DTRG MC74LVXC3245.pdf
MC74LVXC3245DTRG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
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MMBZ18VALT1G MMBZ_ser.PDF
MMBZ18VALT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; ±5%
Max. off-state voltage: 14.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.6A
Breakdown voltage: 18V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Tolerance: ±5%
на замовлення 6600 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.73 грн
57+6.82 грн
83+4.63 грн
100+3.89 грн
542+1.69 грн
1488+1.59 грн
Мінімальне замовлення: 39
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SZMMBZ18VALT1G mmbz5v6alt1-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; ±5%
Application: automotive industry
Max. off-state voltage: 14.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.6A
Breakdown voltage: 18V
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 40W
Mounting: SMD
Case: SOT23
Tolerance: ±5%
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FDN337N FDN337N.pdf
FDN337N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 4523 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+34.66 грн
23+17.32 грн
100+12.95 грн
145+6.21 грн
397+5.90 грн
Мінімальне замовлення: 12
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SB5100 SB5100%20N0092%20REV.B.pdf
SB5100
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
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CAT25256XI-T2 CAT25256-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 CAT25256-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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2N7002W 2N7002W-FAI.pdf
2N7002W
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1089 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.76 грн
32+12.34 грн
100+7.59 грн
183+4.98 грн
502+4.75 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
MBRA210LT3G mbra210lt3-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.26V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 10V
Case: SMA
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FDPF12N50T FDP12N50.pdf
FDPF12N50T
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+140.30 грн
4+117.25 грн
10+89.66 грн
28+84.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NCP10970B1DR2G
NCP10970B1DR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 7÷20VDC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck
Case: SO16
Operating voltage: 7...20V DC
Frequency: 59...71kHz
On-state resistance: 23Ω
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MOC3073M MOC3071M.pdf
MOC3073M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Manufacturer series: MOC3073M
Mounting: THT
на замовлення 398 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+115.54 грн
10+68.97 грн
17+54.79 грн
45+51.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MMBTA14 MMBTA14.pdf
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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MC14040BDG MC14040B-D.pdf
MC14040BDG
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 12bit; binary counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Operating temperature: -55...125°C
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MC14040BDR2G mc14040b-d.pdf
MC14040BDR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 12bit; binary counter
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
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MC14040BDTR2G MC14040B-D.pdf
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 12bit; binary counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
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