| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC33275D-3.3R2G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Output current: 0.3A Output voltage: 3.3V Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275D-5.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Output current: 0.3A Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275DT-5.0RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Output current: 0.3A Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275MN-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DFN8 Kind of package: reel; tape Output current: 0.3A Output voltage: 3V Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Drain-source voltage: 1.2kV Drain current: 13.7A Case: D2PAK-7 Polarisation: unipolar On-state resistance: 0.365Ω Pulsed drain current: 78A Power dissipation: 68W Technology: SiC Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Gate charge: 33.8nC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Drain-source voltage: 1.2kV Drain current: 12A Case: TO247-3 Polarisation: unipolar On-state resistance: 0.16Ω Pulsed drain current: 69A Power dissipation: 59W Technology: SiC Gate-source voltage: -15...25V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Drain-source voltage: 1.2kV Drain current: 13.7A Case: D2PAK-7 Polarisation: unipolar On-state resistance: 0.365Ω Pulsed drain current: 78A Power dissipation: 68W Technology: SiC Gate-source voltage: -5...15V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Gate charge: 33.8nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Drain-source voltage: 1.2kV Drain current: 12A Case: TO247-3 Polarisation: unipolar On-state resistance: 337mΩ Pulsed drain current: 69A Power dissipation: 59W Technology: SiC Gate-source voltage: -5...20V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Drain-source voltage: 1.2kV Drain current: 12.3A Case: TO247-4 Polarisation: unipolar On-state resistance: 224mΩ Pulsed drain current: 69A Power dissipation: 55.5W Technology: SiC Gate-source voltage: -15...25V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Drain-source voltage: 1.2kV Drain current: 12.3A Case: TO247-4 Polarisation: unipolar On-state resistance: 377mΩ Pulsed drain current: 69A Power dissipation: 55.5W Technology: SiC Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL431BVDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FOD8802A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8 Case: SO8 Mounting: SMD Max. off-state voltage: 6V Turn-off time: 40µs Number of channels: 2 Manufacturer series: FOD8802 Collector-emitter voltage: 75V CTR@If: 35-230%@1mA Slew rate: 10kV/μs Kind of output: transistor Insulation voltage: 2.5kV Type of optocoupler: optocoupler Turn-on time: 6µs |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTP055N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 132A Power dissipation: 305W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN7388MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V Mounting: SMD Supply voltage: 10...20V Output current: 350...650mA Polarisation: unipolar Operating temperature: -40...150°C Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5375BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5375BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5342BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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1N5342BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
на замовлення 1195 шт: термін постачання 14-30 дні (днів) |
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1N5342BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
на замовлення 2831 шт: термін постачання 14-30 дні (днів) |
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FDH44N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247 Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 750W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhancement |
на замовлення 197 шт: термін постачання 14-30 дні (днів) |
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FDT4N50NZU | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2A Pulsed drain current: 6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 3Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| FQU4N50TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.64A Pulsed drain current: 10.4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74LCX373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered Kind of output: 3-state Quiescent current: 10µA Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74LCX373MTCX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered Kind of output: 3-state Quiescent current: 10µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74LCX373DTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 1.5...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74LCX373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC4851ADG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16 Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC4851ADTR2G-Q | ONSEMI |
Category: Integrated circuits - Unclassified Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC4851AMN1TWG-Q | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1 Type of integrated circuit: multiplexer Kind of integrated circuit: demultiplexer; multiplexer Mounting: SMD Supply voltage: 2...6V Operating temperature: -55...125°C Number of inputs: 8 Number of outputs: 1 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC4851ADR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16 Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC4851ADR2G-Q | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; SP8T; Ch: 1; SOIC16 Type of integrated circuit: multiplexer Output configuration: SP8T Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NLVHC4851ADTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA Type of integrated circuit: analog switch Number of channels: 1 Case: TSSOP16 Supply voltage: 2...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Application: automotive industry Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 40µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBT5550LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 60...250 Mounting: SMD Kind of package: reel; tape |
на замовлення 7788 шт: термін постачання 14-30 дні (днів) |
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MMBT5550LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 600mA; 225mW; SOT23; universal Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Current gain: 60 Mounting: SMD Application: universal |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMMBT5550LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 60...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C15 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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74LCX125BQX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA Mounting: SMD Supply voltage: 2...3.6V DC Manufacturer series: LCX Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Quiescent current: 10µA Kind of package: reel; tape Case: QFN14 Kind of integrated circuit: buffer; non-inverting Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMB3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.7W Case: TSOT23-6 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NST3904F3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT1123 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MURD620CTT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape Mounting: SMD Max. forward voltage: 1.2V Max. off-state voltage: 200V Load current: 6A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: DPAK Type of diode: rectifying Reverse recovery time: 35ns |
на замовлення 5486 шт: термін постачання 14-30 дні (днів) |
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MMUN2232LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
на замовлення 19423 шт: термін постачання 14-30 дні (днів) |
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MMUN2233LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 30960 шт: термін постачання 14-30 дні (днів) |
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MMUN2234LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Base-emitter resistor: 47kΩ Collector current: 0.1A |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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MMUN2237LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Base-emitter resistor: 22kΩ Collector current: 0.1A |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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SMMUN2233LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
на замовлення 1759 шт: термін постачання 14-30 дні (днів) |
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NUF2230XV6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape Case: SOT563 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Semiconductor structure: bidirectional Type of diode: TVS array |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6KE10A | ONSEMI |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 9.5V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 10µA Max. forward impulse current: 41A Max. off-state voltage: 8.55V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP81151MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8 Case: DFN8 Mounting: SMD Type of integrated circuit: driver Operating temperature: -40...100°C Kind of integrated circuit: gate driver; high-side; low-side Topology: H-bridge Supply voltage: 4.5...5.5V DC |
на замовлення 1776 шт: термін постачання 14-30 дні (днів) |
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NUF4403MNT1G | ONSEMI |
Category: Filters - integrated circuits Description: Filter: digital; EMI; DFN8; Ch: 4 Case: DFN8 Mounting: SMD Type of filter: digital Number of channels: 4 Kind of filter: EMI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZNUF4403MNT1G | ONSEMI |
Category: Filters - integrated circuits Description: Filter: digital; EMI; DFN8; Ch: 4; automotive industry Case: DFN8 Mounting: SMD Type of filter: digital Application: automotive industry Number of channels: 4 Kind of filter: EMI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ5V0A | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.7V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCV5171EDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Mounting: SMD Application: automotive industry Kind of package: reel; tape Case: SO8 Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTHD4102PT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -16A; 2.1W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Pulsed drain current: -16A Power dissipation: 2.1W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ATP304-TL-H | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -100A; 90W; ATPAK; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -100A Power dissipation: 90W Case: ATPAK Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUR1640CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; tube; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Case: TO220AB Kind of package: tube Max. load current: 16A Heatsink thickness: 1.15...1.39mm Reverse recovery time: 60ns |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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MC74HC574ADWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Kind of output: 3-state; non-inverting Supply voltage: 2...6V DC Kind of package: tube Trigger: positive-edge-triggered Manufacturer series: HC |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
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MM74HC574WM | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Trigger: positive-edge-triggered Manufacturer series: HC Quiescent current: 80µA |
товару немає в наявності |
В кошику од. на суму грн. |
| MC33275D-3.3R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику
од. на суму грн.
| MC33275D-5.0R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику
од. на суму грн.
| MC33275DT-5.0RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику
од. на суму грн.
| MC33275MN-3.0R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику
од. на суму грн.
| NTBG160N120SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTHL160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -15...25V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -15...25V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| NVBG160N120SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...15V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...15V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
товару немає в наявності
В кошику
од. на суму грн.
| NVHL160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 337mΩ
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -5...20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 337mΩ
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -5...20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| NTH4L160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 224mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -15...25V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 224mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -15...25V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| NVH4L160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 377mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 377mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
товару немає в наявності
В кошику
од. на суму грн.
| TL431BVDR2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
| FOD8802A |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NTP055N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FAN7388MX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
товару немає в наявності
В кошику
од. на суму грн.
| FGD3040G2-F085 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
товару немає в наявності
В кошику
од. на суму грн.
| FGD3040G2-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| FGD3040G2-F085V |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| 1N5375BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
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| 1N5375BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
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| 1N5342BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.09 грн |
| 1N5342BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
на замовлення 1195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.10 грн |
| 30+ | 14.12 грн |
| 31+ | 13.62 грн |
| 100+ | 13.21 грн |
| 1N5342BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
на замовлення 2831 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.25 грн |
| 20+ | 21.26 грн |
| 22+ | 19.52 грн |
| 50+ | 17.28 грн |
| 100+ | 15.78 грн |
| 200+ | 14.62 грн |
| 500+ | 13.04 грн |
| 1000+ | 12.87 грн |
| FDH44N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 659.21 грн |
| 5+ | 504.15 грн |
| 10+ | 448.50 грн |
| 30+ | 416.11 грн |
| FDT4N50NZU |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 4000 шт
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| FQU4N50TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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| 74LCX373MTC |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: tube
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: tube
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Мінімальне замовлення: 3 шт
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| 74LCX373MTCX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: reel; tape
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MC74LCX373DTG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
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| MC74LCX373DTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
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| MC74HC4851ADG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
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| MC74HC4851ADTR2G-Q |
|
Виробник: ONSEMI
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
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Мінімальне замовлення: 2500 шт
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| MC74HC4851AMN1TWG-Q |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1
Type of integrated circuit: multiplexer
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Supply voltage: 2...6V
Operating temperature: -55...125°C
Number of inputs: 8
Number of outputs: 1
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1
Type of integrated circuit: multiplexer
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Supply voltage: 2...6V
Operating temperature: -55...125°C
Number of inputs: 8
Number of outputs: 1
Number of channels: 1
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| MC74HC4851ADR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
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| MC74HC4851ADR2G-Q |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; SP8T; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: SP8T
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; SP8T; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: SP8T
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
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| NLVHC4851ADTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Application: automotive industry
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Application: automotive industry
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
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Мінімальне замовлення: 2500 шт
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| MMBT5550LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
на замовлення 7788 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 70+ | 5.98 грн |
| 102+ | 4.09 грн |
| 120+ | 3.46 грн |
| 500+ | 2.41 грн |
| 1000+ | 2.08 грн |
| 1500+ | 1.92 грн |
| 3000+ | 1.68 грн |
| 6000+ | 1.49 грн |
| MMBT5550LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 600mA; 225mW; SOT23; universal
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
Application: universal
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 600mA; 225mW; SOT23; universal
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
Application: universal
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| NSVMMBT5550LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| BZX84C15 |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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Мінімальне замовлення: 25 шт
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| 74LCX125BQX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: QFN14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: QFN14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
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| FMB3904 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| NST3904F3T5G |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MURD620CTT4G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Mounting: SMD
Max. forward voltage: 1.2V
Max. off-state voltage: 200V
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Mounting: SMD
Max. forward voltage: 1.2V
Max. off-state voltage: 200V
Load current: 6A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 5486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.50 грн |
| 10+ | 46.51 грн |
| 20+ | 39.95 грн |
| 50+ | 33.22 грн |
| 51+ | 18.77 грн |
| 139+ | 17.77 грн |
| MMUN2232LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 19423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.94 грн |
| 117+ | 3.57 грн |
| 139+ | 2.99 грн |
| 152+ | 2.75 грн |
| 250+ | 2.43 грн |
| 500+ | 2.18 грн |
| 1000+ | 1.94 грн |
| 3000+ | 1.58 грн |
| 6000+ | 1.35 грн |
| MMUN2233LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 30960 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.94 грн |
| 67+ | 6.23 грн |
| 100+ | 4.15 грн |
| 120+ | 3.48 грн |
| 200+ | 2.93 грн |
| 500+ | 2.38 грн |
| 1000+ | 2.07 грн |
| 1134+ | 0.83 грн |
| 3118+ | 0.79 грн |
| MMUN2234LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 47kΩ
Collector current: 0.1A
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.76 грн |
| MMUN2237LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 22kΩ
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 22kΩ
Collector current: 0.1A
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 29.52 грн |
| SMMUN2233LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
на замовлення 1759 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.73 грн |
| 55+ | 7.64 грн |
| 65+ | 6.48 грн |
| 107+ | 3.89 грн |
| 500+ | 2.90 грн |
| 549+ | 1.73 грн |
| 1509+ | 1.63 грн |
| NUF2230XV6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: bidirectional
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: bidirectional
Type of diode: TVS array
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| P6KE10A |
|
Виробник: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Max. forward impulse current: 41A
Max. off-state voltage: 8.55V
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Max. forward impulse current: 41A
Max. off-state voltage: 8.55V
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Мінімальне замовлення: 5 шт
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| NCP81151MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Case: DFN8
Mounting: SMD
Type of integrated circuit: driver
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Supply voltage: 4.5...5.5V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Case: DFN8
Mounting: SMD
Type of integrated circuit: driver
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Supply voltage: 4.5...5.5V DC
на замовлення 1776 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.83 грн |
| 25+ | 16.69 грн |
| 28+ | 15.28 грн |
| 100+ | 13.29 грн |
| 250+ | 12.87 грн |
| NUF4403MNT1G |
|
Виробник: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Case: DFN8
Mounting: SMD
Type of filter: digital
Number of channels: 4
Kind of filter: EMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Case: DFN8
Mounting: SMD
Type of filter: digital
Number of channels: 4
Kind of filter: EMI
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| SZNUF4403MNT1G |
|
Виробник: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4; automotive industry
Case: DFN8
Mounting: SMD
Type of filter: digital
Application: automotive industry
Number of channels: 4
Kind of filter: EMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4; automotive industry
Case: DFN8
Mounting: SMD
Type of filter: digital
Application: automotive industry
Number of channels: 4
Kind of filter: EMI
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| SMBJ5V0A |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
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| NCV5171EDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
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| NTHD4102PT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -16A; 2.1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -16A; 2.1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| ATP304-TL-H |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -100A; 90W; ATPAK; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -100A
Power dissipation: 90W
Case: ATPAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -100A; 90W; ATPAK; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -100A
Power dissipation: 90W
Case: ATPAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MUR1640CTG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Case: TO220AB
Kind of package: tube
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Case: TO220AB
Kind of package: tube
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Reverse recovery time: 60ns
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.78 грн |
| 10+ | 87.21 грн |
| 25+ | 85.55 грн |
| MC74HC574ADWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HC
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.72 грн |
| 11+ | 40.36 грн |
| 25+ | 33.72 грн |
| MM74HC574WM |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: HC
Quiescent current: 80µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: HC
Quiescent current: 80µA
товару немає в наявності
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од. на суму грн.