Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BAS29 | ONSEMI |
![]() ![]() Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.2A Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward voltage: 1V Max. load current: 0.25A |
на замовлення 3004 шт: термін постачання 21-30 дні (днів) |
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SMUN2111T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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DF01M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A Case: MDIP4L Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.1V Max. off-state voltage: 100V Electrical mounting: THT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Load current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5260BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 43V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ52xxB Mounting: SMD |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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FODM121AR2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-300%@5mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor CTR@If: 100-300%@5mA Case: Mini-flat 4pin Turn-off time: 3µs Turn-on time: 3µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FODM121AR2V | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-300%@5mA Collector-emitter voltage: 80V Case: MFP4 Max. off-state voltage: 6V Manufacturer series: FODM121 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM74HCT574SJX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape Operating temperature: -40...85°C Case: SOP20 Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Number of channels: 8 Kind of output: 3-state Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: HCT Technology: CMOS Kind of integrated circuit: D flip-flop Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
EGP10G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CS8190EDWFR20G | ONSEMI |
![]() Description: IC: driver; SO20-W; 8.5÷16VDC Type of integrated circuit: driver Case: SO20-W Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 8.5...16V DC Application: speedometer; tachometer Integrated circuit features: air-core meter movements; Return To Zero (RTZ) function |
на замовлення 997 шт: термін постачання 21-30 дні (днів) |
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NC7S32M5X | ONSEMI |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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NRVBB41H100CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.9V Max. load current: 20A Max. forward impulse current: 350A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RS1A | ONSEMI |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Power dissipation: 1.19W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Case: DO214AC; SMA |
на замовлення 7591 шт: термін постачання 21-30 дні (днів) |
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RS1AFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 50V; 0.8A; 150ns; SOD123F; reel,tape Mounting: SMD Max. off-state voltage: 50V Load current: 0.8A Semiconductor structure: single diode Reverse recovery time: 150ns Kind of package: reel; tape Type of diode: rectifying Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14528BDG | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Kind of package: tube Number of inputs: 3 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14528BDR2G | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Case: SOIC16 Number of inputs: 3 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 2 Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: monostable; multivibrator |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SRV05-4MR6T1G | ONSEMI |
![]() Description: Diode: TVS array; TSOP6; reel,tape Type of diode: TVS array Mounting: SMD Case: TSOP6 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NL17SZ17DFT2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of input: with Schmitt trigger |
на замовлення 2404 шт: термін постачання 21-30 дні (днів) |
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MUN5213DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 140 |
на замовлення 925 шт: термін постачання 21-30 дні (днів) |
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MUN5213T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 140 |
на замовлення 1524 шт: термін постачання 21-30 дні (днів) |
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SMUN5213T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMUN5213DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMUN2213T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.23W Application: automotive industry |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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MUN2213T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.23W |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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MMSZ5237BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 4093 шт: термін постачання 21-30 дні (днів) |
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SZMMSZ5237BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RURG3060-F085 | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Case: TO247-2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RHRG3060-F085 | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Case: TO247-2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14532BDG | ONSEMI |
![]() Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: 8bit; priority encoder Mounting: SMD Case: SOIC16 Number of inputs: 9 Supply voltage: 3...18V DC Number of channels: 1 Kind of package: tube Technology: CMOS Operating temperature: -55...125°C |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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MUN2211T3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SMUN2211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SZ1SMB5936BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74LVX4052DG | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS Manufacturer series: LVX Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2.5...6V DC Type of integrated circuit: digital Number of channels: 2 Kind of package: tube Technology: CMOS Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Mounting: SMD Case: SOIC16 |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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LM7915CT | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -15V; 1A; TO220-3; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 1A Case: TO220-3 Mounting: THT Kind of package: tube Number of channels: 1 Heatsink thickness: 0.51...0.61mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQD12N20L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 2.5W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 2.5W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ESD8104MUTAG | ONSEMI |
![]() Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD Type of diode: TVS array Case: uDFN10 Mounting: SMD Max. off-state voltage: 3.3V Kind of package: reel; tape Number of channels: 4 Breakdown voltage: 5V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBRS120T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Case: SMB Mounting: SMD Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.6V |
на замовлення 178 шт: термін постачання 21-30 дні (днів) |
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FQPF5N90 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 51W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF5N40 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF15P12 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Drain current: -10.6A Pulsed drain current: -60A Power dissipation: 41W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF7P20 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.3A Pulsed drain current: -20.8A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF32N20C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 17.8A Pulsed drain current: 112A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF45N15V2 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 31A Pulsed drain current: 180A Power dissipation: 66W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF27N25 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.9A Pulsed drain current: 56A Power dissipation: 55W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SESD9L5.0ST5G | ONSEMI |
![]() Description: Diode: TVS; 5.4V; unidirectional; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.4V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMSZ5252BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Zener voltage: 24V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ52xxB Mounting: SMD Case: SOD123 Tolerance: ±5% |
на замовлення 5999 шт: термін постачання 21-30 дні (днів) |
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ESD9X5.0ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Case: SOD923 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.15W Leakage current: 1µA Version: ESD |
на замовлення 9322 шт: термін постачання 21-30 дні (днів) |
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NCP692MN33T2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DFN6; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 3.3V Output current: 1A Case: DFN6 Mounting: SMD Manufacturer series: NCP692 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NRVBS260NT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 60V Load current: 2A Case: SMB Max. forward voltage: 0.55V Max. forward impulse current: 60A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP51820AMNTWG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Technology: GaN Case: QFN15 Output current: -2...1A Supply voltage: 9...17V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5934BRLG | ONSEMI |
![]() Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4007G | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 4419 шт: термін постачання 21-30 дні (днів) |
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1N4454TR | ONSEMI |
![]() Description: Diode: switching; THT; 50V; 0.4A; reel,tape; DO35 Load current: 0.4A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: switching Max. off-state voltage: 50V Features of semiconductor devices: small signal Case: DO35 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBR745G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. load current: 7.5A Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.57V Max. forward impulse current: 150A |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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FDMS86500DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 200A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 108A Pulsed drain current: 200A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
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FDN5632N-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 1.1W; SuperSOT-3 Drain-source voltage: 60V Drain current: 1.7A On-state resistance: 135mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-3 |
на замовлення 1294 шт: термін постачання 21-30 дні (днів) |
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74LCXH16245MTDX | ONSEMI |
![]() Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver Number of channels: 16 Technology: CMOS Mounting: SMD Case: TSSOP48 Manufacturer series: LCXH Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LCXH Integrated circuit features: 5V tolerant on inputs/outputs |
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В кошику од. на суму грн. | |||||||||||||||||
74LCXP16245MTDX | ONSEMI |
![]() Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver Number of channels: 16 Technology: CMOS Mounting: SMD Case: TSSOP48 Manufacturer series: LCXR Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LCXP Integrated circuit features: 5V tolerant on inputs/outputs |
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В кошику од. на суму грн. | |||||||||||||||||
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MJE270G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 15W Case: TO225 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HUF75639S3ST | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ22T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
на замовлення 256 шт: термін постачання 21-30 дні (днів) |
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BAS29 | ![]() |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.2A; 50ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.2A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 1V
Max. load current: 0.25A
на замовлення 3004 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.58 грн |
31+ | 12.46 грн |
100+ | 6.00 грн |
321+ | 2.86 грн |
882+ | 2.71 грн |
SMUN2111T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.06 грн |
69+ | 5.58 грн |
89+ | 4.31 грн |
100+ | 3.85 грн |
409+ | 2.19 грн |
1123+ | 2.06 грн |
DF01M |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: MDIP4L
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 1.5A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: MDIP4L
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 1.5A
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В кошику
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MMSZ5260BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 43V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 43V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Mounting: SMD
на замовлення 392 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.04 грн |
88+ | 4.36 грн |
141+ | 2.72 грн |
FODM121AR2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-300%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
CTR@If: 100-300%@5mA
Case: Mini-flat 4pin
Turn-off time: 3µs
Turn-on time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; CTR@If: 100-300%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
CTR@If: 100-300%@5mA
Case: Mini-flat 4pin
Turn-off time: 3µs
Turn-on time: 3µs
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FODM121AR2V |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-300%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: FODM121
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-300%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: FODM121
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MM74HCT574SJX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Operating temperature: -40...85°C
Case: SOP20
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Kind of integrated circuit: D flip-flop
Mounting: SMD
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Operating temperature: -40...85°C
Case: SOP20
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Kind of integrated circuit: D flip-flop
Mounting: SMD
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EGP10G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Reverse recovery time: 50ns
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CS8190EDWFR20G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; SO20-W; 8.5÷16VDC
Type of integrated circuit: driver
Case: SO20-W
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 8.5...16V DC
Application: speedometer; tachometer
Integrated circuit features: air-core meter movements; Return To Zero (RTZ) function
Category: Drivers - integrated circuits
Description: IC: driver; SO20-W; 8.5÷16VDC
Type of integrated circuit: driver
Case: SO20-W
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 8.5...16V DC
Application: speedometer; tachometer
Integrated circuit features: air-core meter movements; Return To Zero (RTZ) function
на замовлення 997 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 486.57 грн |
3+ | 311.15 грн |
8+ | 294.33 грн |
NC7S32M5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.53 грн |
50+ | 7.80 грн |
59+ | 6.50 грн |
104+ | 3.71 грн |
370+ | 2.42 грн |
1017+ | 2.29 грн |
NRVBB41H100CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
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RS1A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Power dissipation: 1.19W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AC; SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Power dissipation: 1.19W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AC; SMA
на замовлення 7591 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.17 грн |
21+ | 18.50 грн |
25+ | 15.44 грн |
50+ | 10.70 грн |
100+ | 9.40 грн |
107+ | 8.63 грн |
293+ | 8.16 грн |
500+ | 7.87 грн |
RS1AFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 0.8A; 150ns; SOD123F; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 0.8A; 150ns; SOD123F; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
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од. на суму грн.
MC14528BDG |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Kind of package: tube
Number of inputs: 3
Operating temperature: -55...125°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Kind of package: tube
Number of inputs: 3
Operating temperature: -55...125°C
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MC14528BDR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
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SRV05-4MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; TSOP6; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; TSOP6; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
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од. на суму грн.
NL17SZ17DFT2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of input: with Schmitt trigger
на замовлення 2404 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
33+ | 11.62 грн |
48+ | 8.10 грн |
111+ | 3.47 грн |
402+ | 2.29 грн |
1104+ | 2.16 грн |
MUN5213DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
на замовлення 925 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
125+ | 3.43 грн |
350+ | 2.63 грн |
MUN5213T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
на замовлення 1524 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
59+ | 6.50 грн |
89+ | 4.31 грн |
106+ | 3.63 грн |
500+ | 2.50 грн |
578+ | 1.59 грн |
SMUN5213T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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SMUN5213DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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SMUN2213T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
59+ | 6.50 грн |
80+ | 4.80 грн |
100+ | 4.26 грн |
407+ | 2.19 грн |
1117+ | 2.08 грн |
MUN2213T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.23W
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
52+ | 7.49 грн |
100+ | 4.59 грн |
500+ | 3.36 грн |
566+ | 1.57 грн |
MMSZ5237BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 4093 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.41 грн |
70+ | 5.50 грн |
75+ | 5.10 грн |
97+ | 3.94 грн |
107+ | 3.60 грн |
534+ | 1.69 грн |
1466+ | 1.60 грн |
SZMMSZ5237BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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RURG3060-F085 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
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RHRG3060-F085 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
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MC14532BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; priority encoder
Mounting: SMD
Case: SOIC16
Number of inputs: 9
Supply voltage: 3...18V DC
Number of channels: 1
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; priority encoder
Mounting: SMD
Case: SOIC16
Number of inputs: 9
Supply voltage: 3...18V DC
Number of channels: 1
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
на замовлення 101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 93.03 грн |
10+ | 77.98 грн |
17+ | 55.57 грн |
46+ | 52.54 грн |
MUN2211T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
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SMUN2211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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SZ1SMB5936BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MC74LVX4052DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Manufacturer series: LVX
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Mounting: SMD
Case: SOIC16
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Manufacturer series: LVX
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Mounting: SMD
Case: SOIC16
на замовлення 125 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.80 грн |
10+ | 56.42 грн |
24+ | 38.29 грн |
66+ | 36.20 грн |
LM7915CT |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
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FQD12N20L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 2.5W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 2.5W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 2.5W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 2.5W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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ESD8104MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Case: uDFN10
Mounting: SMD
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Number of channels: 4
Breakdown voltage: 5V
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Case: uDFN10
Mounting: SMD
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Number of channels: 4
Breakdown voltage: 5V
Version: ESD
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MBRS120T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
на замовлення 178 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.46 грн |
20+ | 19.57 грн |
50+ | 16.05 грн |
100+ | 14.75 грн |
125+ | 7.26 грн |
FQPF5N90 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.9A; Idm: 12A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
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FQPF5N40 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.9A; Idm: 12A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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FQPF15P12 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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FQPF7P20 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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FQPF32N20C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; Idm: 112A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Pulsed drain current: 112A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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FQPF45N15V2 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Pulsed drain current: 180A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
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FQPF27N25 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 55W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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SESD9L5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.4V; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.4V; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMSZ5252BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 24V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 24V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Mounting: SMD
Case: SOD123
Tolerance: ±5%
на замовлення 5999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.43 грн |
85+ | 4.51 грн |
115+ | 3.33 грн |
124+ | 3.09 грн |
542+ | 1.69 грн |
1491+ | 1.60 грн |
1500+ | 1.56 грн |
2000+ | 1.54 грн |
ESD9X5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Leakage current: 1µA
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Leakage current: 1µA
Version: ESD
на замовлення 9322 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.41 грн |
81+ | 4.74 грн |
122+ | 3.13 грн |
145+ | 2.64 грн |
567+ | 1.57 грн |
1557+ | 1.49 грн |
2500+ | 1.44 грн |
NCP692MN33T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP692
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP692
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
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NRVBS260NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 2A
Case: SMB
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 2A
Case: SMB
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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NCP51820AMNTWG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
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1N5934BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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1N4007G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 4419 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
77+ | 4.97 грн |
112+ | 3.42 грн |
390+ | 2.32 грн |
500+ | 2.31 грн |
1071+ | 2.19 грн |
1N4454TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 50V; 0.4A; reel,tape; DO35
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 50V
Features of semiconductor devices: small signal
Case: DO35
Mounting: THT
Category: THT universal diodes
Description: Diode: switching; THT; 50V; 0.4A; reel,tape; DO35
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 50V
Features of semiconductor devices: small signal
Case: DO35
Mounting: THT
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MBR745G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. load current: 7.5A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. load current: 7.5A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 205.82 грн |
FDMS86500DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 200A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 200A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 200A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 200A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDN5632N-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 1.1W; SuperSOT-3
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 1.1W; SuperSOT-3
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
на замовлення 1294 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.75 грн |
11+ | 37.46 грн |
41+ | 22.40 грн |
113+ | 21.18 грн |
500+ | 20.34 грн |
74LCXH16245MTDX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver
Number of channels: 16
Technology: CMOS
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCXH
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCXH
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver
Number of channels: 16
Technology: CMOS
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCXH
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCXH
Integrated circuit features: 5V tolerant on inputs/outputs
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74LCXP16245MTDX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver
Number of channels: 16
Technology: CMOS
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCXR
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCXP
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver
Number of channels: 16
Technology: CMOS
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCXR
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCXP
Integrated circuit features: 5V tolerant on inputs/outputs
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MJE270G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
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HUF75639S3ST |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSZ22T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 256 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.88 грн |
61+ | 6.35 грн |
98+ | 3.91 грн |
120+ | 3.20 грн |