| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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SS26T3G | ONSEMI |
  Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.55V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Max. forward impulse current: 50A |
на замовлення 1576 шт: термін постачання 14-30 дні (днів) |
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NRVBSS26NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.63V Application: automotive industry Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NV25160DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...150°C Clock frequency: 10MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2kx8bit Kind of package: reel; tape Case: TSSOP8 Interface: SPI Operating voltage: 2.5...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAT25160VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: SOIC8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAT25160YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: TSSOP8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV25160VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz Mounting: SMD Access time: 35ns Type of integrated circuit: EEPROM memory Operating temperature: -40...125°C Clock frequency: 10MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: SOIC8 Interface: SPI Operating voltage: 2.5...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV25160YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz Mounting: SMD Access time: 35ns Type of integrated circuit: EEPROM memory Operating temperature: -40...125°C Clock frequency: 10MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2048x8bit Kind of package: reel; tape Case: TSSOP8 Interface: SPI Operating voltage: 2.5...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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HCPL4503M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: DIP8 Slew rate: 10kV/μs Manufacturer series: HCPL4503M |
на замовлення 134 шт: термін постачання 14-30 дні (днів) |
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MM3Z39VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 39V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
на замовлення 4253 шт: термін постачання 14-30 дні (днів) |
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LM358N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 224 шт: термін постачання 14-30 дні (днів) |
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FDB075N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Pulsed drain current: 522A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| FPF1321UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Type of integrated circuit: power switch Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP6 On-state resistance: 50mΩ Supply voltage: 1.5...5.5V DC Active logical level: high Operating temperature: -40...85°C Version: ESD Kind of package: reel; tape |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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MBD770DWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC88; SMD; 70V; 0.1A; reel,tape Mounting: SMD Case: SC88 Kind of package: reel; tape Max. off-state voltage: 70V Load current: 0.1A Semiconductor structure: double independent Type of diode: Schottky switching Max. forward impulse current: 1A Max. forward voltage: 0.5V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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NRVBS2040LNT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 70A Kind of package: reel; tape Application: automotive industry Max. load current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVBS240LNT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry Max. load current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVBS260NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 60A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MRA4005T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape Mounting: SMD Max. forward voltage: 1.18V Max. off-state voltage: 0.6kV Load current: 1A Max. load current: 30A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
на замовлення 1022 шт: термін постачання 14-30 дні (днів) |
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NRVA4005T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.18V Application: automotive industry Max. off-state voltage: 0.6kV Load current: 1A Max. load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
на замовлення 3990 шт: термін постачання 14-30 дні (днів) |
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SBAV99LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 1552 шт: термін постачання 14-30 дні (днів) |
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BAS16 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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NTP6412ANG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 240A; 167W; TO220-3 On-state resistance: 18.2mΩ Mounting: THT Pulsed drain current: 240A Power dissipation: 167W Gate charge: 73nC Polarisation: unipolar Drain current: 58A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO220-3 |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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GBU8K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 489 шт: термін постачання 14-30 дні (днів) |
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MMSZ5231B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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FDV305N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 303mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3133 шт: термін постачання 14-30 дні (днів) |
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| NUF8401MNT4G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; DFN16; Ch: 8; reel,tape Case: DFN16 Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS array Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDLL333 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape Mounting: SMD Features of semiconductor devices: small signal Max. off-state voltage: 125V Load current: 0.5A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD80 Type of diode: switching Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 3W Capacitance: 15pF |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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SZ1SMB5914BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB5100 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FL7733AMX | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; SOP8; 180mA; linear dimming Mounting: SMD Case: SOP8 Output current: 0.18A Type of integrated circuit: driver Integrated circuit features: linear dimming Kind of integrated circuit: LED driver |
товару немає в наявності |
В кошику од. на суму грн. |
| SS26T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.55V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.55V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
на замовлення 1576 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.00 грн |
| 25+ | 17.44 грн |
| 28+ | 15.18 грн |
| 50+ | 11.74 грн |
| 100+ | 10.82 грн |
| 500+ | 9.06 грн |
| 1000+ | 8.30 грн |
| NRVBSS26NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.63V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.63V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
товару немає в наявності
В кошику
од. на суму грн.
| NV25160DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...150°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...150°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25160VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25160YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV25160VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV25160YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Access time: 35ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...125°C
Clock frequency: 10MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: SPI
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| HCPL4503M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL4503M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Manufacturer series: HCPL4503M
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.38 грн |
| 10+ | 95.61 грн |
| 20+ | 89.74 грн |
| 50+ | 87.22 грн |
| MM3Z39VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 4253 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.52 грн |
| 120+ | 3.52 грн |
| 136+ | 3.10 грн |
| 180+ | 2.33 грн |
| 500+ | 2.14 грн |
| 1000+ | 1.85 грн |
| 3000+ | 1.54 грн |
| LM358N |
|
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
товару немає в наявності
Мінімальне замовлення: 5 шт
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| FDP075N15A-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 224 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 314.30 грн |
| 5+ | 231.47 грн |
| 10+ | 202.95 грн |
| 50+ | 163.54 грн |
| FDB075N15A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Pulsed drain current: 522A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Pulsed drain current: 522A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| FPF1321UCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 50mΩ
Supply voltage: 1.5...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Version: ESD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 50mΩ
Supply voltage: 1.5...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Version: ESD
Kind of package: reel; tape
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 40.10 грн |
| MBD770DWT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88; SMD; 70V; 0.1A; reel,tape
Mounting: SMD
Case: SC88
Kind of package: reel; tape
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: double independent
Type of diode: Schottky switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88; SMD; 70V; 0.1A; reel,tape
Mounting: SMD
Case: SC88
Kind of package: reel; tape
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: double independent
Type of diode: Schottky switching
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.45 грн |
| 36+ | 11.74 грн |
| 59+ | 7.13 грн |
| 100+ | 6.29 грн |
| NRVBS2040LNT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
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| NRVBS240LNT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
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| NRVBS260NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
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| MRA4005T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Max. forward voltage: 1.18V
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 30A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Max. forward voltage: 1.18V
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 30A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
на замовлення 1022 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 50+ | 8.55 грн |
| 57+ | 7.46 грн |
| 100+ | 5.48 грн |
| 500+ | 4.76 грн |
| 1000+ | 4.30 грн |
| NRVA4005T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.18V
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.18V
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
на замовлення 3990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.77 грн |
| 40+ | 10.48 грн |
| 100+ | 6.99 грн |
| 500+ | 5.54 грн |
| 1000+ | 4.98 грн |
| 2000+ | 4.52 грн |
| 2500+ | 4.39 грн |
| SBAV99LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 1552 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 77+ | 5.45 грн |
| 110+ | 3.84 грн |
| 127+ | 3.32 грн |
| 250+ | 2.82 грн |
| 500+ | 2.47 грн |
| 1000+ | 2.11 грн |
| BAS16 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| NTP6412ANG |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 240A; 167W; TO220-3
On-state resistance: 18.2mΩ
Mounting: THT
Pulsed drain current: 240A
Power dissipation: 167W
Gate charge: 73nC
Polarisation: unipolar
Drain current: 58A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 240A; 167W; TO220-3
On-state resistance: 18.2mΩ
Mounting: THT
Pulsed drain current: 240A
Power dissipation: 167W
Gate charge: 73nC
Polarisation: unipolar
Drain current: 58A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 190.57 грн |
| 10+ | 109.86 грн |
| 50+ | 88.06 грн |
| GBU8K |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 489 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 121.02 грн |
| 5+ | 84.70 грн |
| 10+ | 71.29 грн |
| MMSZ5231B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| FDV305N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3133 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 22+ | 19.37 грн |
| 50+ | 13.50 грн |
| 100+ | 11.74 грн |
| 500+ | 8.89 грн |
| 1000+ | 7.88 грн |
| 1500+ | 7.38 грн |
| 3000+ | 6.71 грн |
| NUF8401MNT4G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN16; Ch: 8; reel,tape
Case: DFN16
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 8
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN16; Ch: 8; reel,tape
Case: DFN16
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 8
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| FDLL333 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Features of semiconductor devices: small signal
Max. off-state voltage: 125V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD80
Type of diode: switching
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Features of semiconductor devices: small signal
Max. off-state voltage: 125V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD80
Type of diode: switching
Max. forward voltage: 1.1V
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| 1N4007 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
Capacitance: 15pF
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| SZ1SMB5914BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| SB5100 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
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| FL7733AMX |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SOP8; 180mA; linear dimming
Mounting: SMD
Case: SOP8
Output current: 0.18A
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; LED driver; SOP8; 180mA; linear dimming
Mounting: SMD
Case: SOP8
Output current: 0.18A
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: LED driver
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од. на суму грн.