| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NC7SZ14L6X | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAKFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: 6-MicroPak Input Logic Level - High: 1.4V ~ 3.6V Input Logic Level - Low: 0.2V ~ 1.2V Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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NC7WZ14L6X | onsemi |
Description: IC INVERTER 2CH 2-INP 6MICROPAKFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-MicroPak Input Logic Level - High: 1.4V ~ 3.6V Input Logic Level - Low: 0.2V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 2 Current - Quiescent (Max): 1 µA |
на замовлення 201114 шт: термін постачання 21-31 дні (днів) |
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FDN308P | onsemi |
Description: MOSFET P-CH 20V 1.5A SUPERSOT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 341 pF @ 10 V |
на замовлення 2456 шт: термін постачання 21-31 дні (днів) |
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FSA1256L8X | onsemi |
Description: IC ANALOG SWITCH 8MICROPAK |
на замовлення 25874 шт: термін постачання 21-31 дні (днів) |
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NC7SV74L8X | onsemi |
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAKPackaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Current - Quiescent (Iq): 900 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 2 pF Supplier Device Package: 8-MicroPak™ Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF Part Status: Obsolete Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7NZ17L8X | onsemi |
Description: IC BUFF 1.65V 8-MICROPAKPackaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-MicroPak™ |
на замовлення 56073 шт: термін постачання 21-31 дні (днів) |
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NC7WZ86L8X | onsemi |
Description: IC GATE XOR 2CH 2-INP 8MICROPAKPackaging: Cut Tape (CT) Package / Case: 8-UFQFN Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 8-MicroPak™ Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 1 µA |
на замовлення 9750 шт: термін постачання 21-31 дні (днів) |
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NC7SV125L6X | onsemi |
Description: IC BUF NON-INVERT 3.6V 6MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 6-MicroPak Part Status: Obsolete |
на замовлення 140000 шт: термін постачання 21-31 дні (днів) |
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NC7WP32K8X | onsemi |
Description: IC OR 2-CIR 2-IN US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: US8 Input Logic Level - High: 1.6V ~ 2.1V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF Part Status: Obsolete Number of Circuits: 2 Current - Quiescent (Max): 900 nA |
на замовлення 496 шт: термін постачання 21-31 дні (днів) |
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FDME1034CZT | onsemi |
Description: MOSFET N/P-CH 20V 3.8A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
на замовлення 2020 шт: термін постачання 21-31 дні (днів) |
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74VCX245BQX | onsemi |
Description: IC TXRX NON-INVERT 3.6V 20DQFNPackaging: Cut Tape (CT) Package / Case: 20-WFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.4V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-DQFN (2.5x4.5) |
на замовлення 3017 шт: термін постачання 21-31 дні (днів) |
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NC7NZ34L8X | onsemi |
Description: IC BUFF 1.65V 8-MICROPAKPackaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-MicroPak™ |
на замовлення 4905 шт: термін постачання 21-31 дні (днів) |
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74LCX04BQX | onsemi |
Description: IC INVERTER 6CH 1-INP 14DQFNPackaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-DQFN (3x2.5) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 5672 шт: термін постачання 21-31 дні (днів) |
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FDC6310P | onsemi |
Description: MOSFET 2P-CH 20V 2.2A SSOT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
на замовлення 4312 шт: термін постачання 21-31 дні (днів) |
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NC7SB3157L6X | onsemi |
Description: IC SWITCH SPDTX1 15OHM 6MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: 6-MicroPak Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Last Time Buy Number of Circuits: 1 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FAN4931IP5X | onsemi |
Description: IC OPAMP VFB 1 CIRCUIT SC70-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Supplier Device Package: SC-70-5 Number of Circuits: 1 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
на замовлення 98988 шт: термін постачання 21-31 дні (днів) |
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FAN2558MPX | onsemi |
Description: IC REG LIN POS ADJ 180MA 6-DFNPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 180mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2) Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 1V Control Features: Enable, Power Good PSRR: 50dB (100kHz) Voltage Dropout (Max): 0.4V @ 180mA Protection Features: Over Current, Over Temperature |
на замовлення 2904 шт: термін постачання 21-31 дні (днів) |
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FDMC8882 | onsemi |
Description: MOSFET N-CH 30V 10.5A/16A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V |
на замовлення 30235 шт: термін постачання 21-31 дні (днів) |
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HUF76639S3ST | onsemi |
Description: MOSFET N-CH 100V 51A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
на замовлення 853 шт: термін постачання 21-31 дні (днів) |
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74ALVC16245MTDX | onsemi |
Description: IC TXRX NON-INVERT 3.6V 48TSSOPPackaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP |
на замовлення 1776 шт: термін постачання 21-31 дні (днів) |
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74LVX161284MTDX | onsemi |
Description: TXRX TRANSLATING IEEE 48TSSOPPackaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Number of Bits: 8 Logic Type: IEEE STD 1284 Translation Transceiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 3V ~ 3.6V Supplier Device Package: 48-TSSOP Part Status: Obsolete |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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BAY72TR | onsemi |
Description: DIODE GEN PURP 125V 200MA DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
на замовлення 7770 шт: термін постачання 21-31 дні (днів) |
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FDD86113LZ | onsemi |
Description: MOSFET N-CH 100V 4.2A/5.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V |
на замовлення 13220 шт: термін постачання 21-31 дні (днів) |
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FJB5555TM | onsemi |
Description: TRANS NPN 400V 5A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FIN1047MTCX | onsemi |
Description: IC TRANSCEIVER 4/0 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 4/0 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 16-TSSOP |
на замовлення 2969 шт: термін постачання 21-31 дні (днів) |
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FDD3706 | onsemi |
Description: MOSFET N-CH 20V 14.7A/50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EGF1D | onsemi |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 9074 шт: термін постачання 21-31 дні (днів) |
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HUF76609D3ST | onsemi |
Description: MOSFET N-CH 100V 10A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V |
на замовлення 1210 шт: термін постачання 21-31 дні (днів) |
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SS15 | onsemi |
Description: DIODE SCHOTTKY 50V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 50 V |
на замовлення 28227 шт: термін постачання 21-31 дні (днів) |
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FDB3682 | onsemi |
Description: MOSFET N-CH 100V 6A/32A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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74LVX573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 5.9ns Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 3751 шт: термін постачання 21-31 дні (днів) |
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FDMS7670AS | onsemi |
Description: MOSFET N-CH 30V 22A/42A 8PQFN |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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FAN4274imu8x | onsemi |
Description: IC CMOS 2 CIRCUIT 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA (x2 Channels) Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 6 mV Supplier Device Package: 8-MSOP Part Status: Last Time Buy Number of Circuits: 2 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
на замовлення 15470 шт: термін постачання 21-31 дні (днів) |
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FAN2558S15X | onsemi |
Description: IC REG LINEAR 1.5V 180MA SOT23-5 |
на замовлення 114 шт: термін постачання 21-31 дні (днів) |
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RGF1J | onsemi |
Description: DIODE GEN PURP 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 6128 шт: термін постачання 21-31 дні (днів) |
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74LVTH574MTCX | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Current - Quiescent (Iq): 190 µA Current - Output High, Low: 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISL9R8120S3ST | onsemi |
Description: DIODE GEN PURP 1.2KV 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Capacitance @ Vr, F: 30pF @ 10V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS35 | onsemi |
Description: DIODE SCHOTTKY 50V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
на замовлення 4765 шт: термін постачання 21-31 дні (днів) |
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GF1D | onsemi |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 39753 шт: термін постачання 21-31 дні (днів) |
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RGP10M | onsemi |
Description: DIODE STANDARD 1000V 1A DO41Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 10951 шт: термін постачання 21-31 дні (днів) |
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74VHCT541AMTCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP |
на замовлення 2296 шт: термін постачання 21-31 дні (днів) |
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GF1J | onsemi |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 132920 шт: термін постачання 21-31 дні (днів) |
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FDMC7660S | onsemi |
Description: MOSFET N-CH 30V 20A/40A POWER33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V |
на замовлення 1757 шт: термін постачання 21-31 дні (днів) |
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FDS8870 | onsemi |
Description: MOSFET N-CH 30V 18A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HUF75329D3ST | onsemi |
Description: MOSFET N-CH 55V 20A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
на замовлення 1049 шт: термін постачання 21-31 дні (днів) |
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1N3070TR | onsemi |
Description: DIODE STANDARD 200V 500MA DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
на замовлення 44441 шт: термін постачання 21-31 дні (днів) |
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1N485BTR | onsemi |
Description: DIODE STANDARD 200V 200MA DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 25 nA @ 175 V |
на замовлення 10612 шт: термін постачання 21-31 дні (днів) |
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KA78RM33RTF | onsemi |
Description: IC REG LINEAR 3.3V 500MA DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX760MTCX | onsemi |
Description: IC BUFF 2V/3.6V 20-TSSOP |
на замовлення 3504 шт: термін постачання 21-31 дні (днів) |
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FUSB2805MLX | onsemi |
Description: IC TXRX 32-MLPPackaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 4.5V Number of Drivers/Receivers: 1/1 Data Rate: 480Mbps Protocol: USB 2.0 Supplier Device Package: 32-MLP (5x5) Duplex: Full Part Status: Active |
на замовлення 10636 шт: термін постачання 21-31 дні (днів) |
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FDMC86102L | onsemi |
Description: MOSFET N-CH 100V 7A/18A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
на замовлення 9003 шт: термін постачання 21-31 дні (днів) |
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FSUSB22MTCX | onsemi |
Description: IC USB SWITCH QUAD 2X1 16TSSOPFeatures: Bi-Directional, USB 2.0 Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 6.5Ohm -3db Bandwidth: 750MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
на замовлення 5089 шт: термін постачання 21-31 дні (днів) |
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FDMC6679AZ | onsemi |
Description: MOSFET P-CH 30V 11.5A/20A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS19 | onsemi |
Description: DIODE SCHOTTKY 90V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 90 V |
на замовлення 22123 шт: термін постачання 21-31 дні (днів) |
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FDS9400A | onsemi |
Description: MOSFET P-CH 30V 3.4A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EGP20D | onsemi |
Description: DIODE STANDARD 200V 2A DO15Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 7127 шт: термін постачання 21-31 дні (днів) |
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RGF1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 27854 шт: термін постачання 21-31 дні (днів) |
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SS13 | onsemi |
Description: DIODE SCHOTTKY 30V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 33063 шт: термін постачання 21-31 дні (днів) |
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FDT86102LZ | onsemi |
Description: MOSFET N-CH 100V 6.6A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS3580 | onsemi |
Description: MOSFET N-CH 80V 7.6A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
на замовлення 9297 шт: термін постачання 21-31 дні (днів) |
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| NC7SZ14L6X |
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Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.97 грн |
| 13+ | 24.17 грн |
| 25+ | 19.82 грн |
| 100+ | 14.01 грн |
| 250+ | 11.75 грн |
| 500+ | 10.36 грн |
| 1000+ | 9.04 грн |
| 2500+ | 7.80 грн |
| NC7WZ14L6X |
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Виробник: onsemi
Description: IC INVERTER 2CH 2-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 2CH 2-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
на замовлення 201114 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.76 грн |
| 13+ | 24.32 грн |
| 25+ | 19.98 грн |
| 100+ | 14.12 грн |
| 250+ | 11.84 грн |
| 500+ | 10.44 грн |
| 1000+ | 9.11 грн |
| 2500+ | 7.87 грн |
| FDN308P |
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Виробник: onsemi
Description: MOSFET P-CH 20V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 341 pF @ 10 V
Description: MOSFET P-CH 20V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 341 pF @ 10 V
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.38 грн |
| 10+ | 35.61 грн |
| 50+ | 26.09 грн |
| 100+ | 21.58 грн |
| 500+ | 16.48 грн |
| FSA1256L8X |
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Виробник: onsemi
Description: IC ANALOG SWITCH 8MICROPAK
Description: IC ANALOG SWITCH 8MICROPAK
на замовлення 25874 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.76 грн |
| 10+ | 69.16 грн |
| 25+ | 65.63 грн |
| 100+ | 50.60 грн |
| 250+ | 47.30 грн |
| 500+ | 41.79 грн |
| 1000+ | 32.45 грн |
| 2500+ | 30.29 грн |
| NC7SV74L8X |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Iq): 900 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 2 pF
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Bits per Element: 1
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Iq): 900 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 2 pF
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Bits per Element: 1
товару немає в наявності
В кошику
од. на суму грн.
| NC7NZ17L8X |
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Виробник: onsemi
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
на замовлення 56073 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.96 грн |
| 20+ | 15.48 грн |
| 25+ | 13.79 грн |
| 100+ | 11.15 грн |
| 250+ | 10.29 грн |
| 500+ | 9.78 грн |
| 1000+ | 9.20 грн |
| 2500+ | 9.10 грн |
| NC7WZ86L8X |
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Виробник: onsemi
Description: IC GATE XOR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
на замовлення 9750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.18 грн |
| 10+ | 34.69 грн |
| 25+ | 28.64 грн |
| 100+ | 20.45 грн |
| 250+ | 17.30 грн |
| 500+ | 15.35 грн |
| 1000+ | 13.50 грн |
| 2500+ | 11.77 грн |
| NC7SV125L6X |
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Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.92 грн |
| 15+ | 20.82 грн |
| 25+ | 19.06 грн |
| 100+ | 12.06 грн |
| 250+ | 9.99 грн |
| 500+ | 9.16 грн |
| 1000+ | 6.75 грн |
| 2500+ | 6.34 грн |
| NC7WP32K8X |
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Виробник: onsemi
Description: IC OR 2-CIR 2-IN US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: US8
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
Description: IC OR 2-CIR 2-IN US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: US8
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.80 грн |
| 12+ | 26.31 грн |
| 25+ | 23.51 грн |
| 100+ | 19.23 грн |
| 250+ | 17.87 грн |
| FDME1034CZT |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
на замовлення 2020 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.05 грн |
| 10+ | 43.38 грн |
| 100+ | 28.39 грн |
| 500+ | 20.58 грн |
| 1000+ | 18.63 грн |
| 2000+ | 16.99 грн |
| 74VCX245BQX |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Description: IC TXRX NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
на замовлення 3017 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.81 грн |
| 10+ | 82.80 грн |
| 25+ | 78.60 грн |
| 100+ | 56.64 грн |
| 250+ | 50.05 грн |
| 500+ | 47.42 грн |
| 1000+ | 36.27 грн |
| NC7NZ34L8X |
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Виробник: onsemi
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Description: IC BUFF 1.65V 8-MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
на замовлення 4905 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.96 грн |
| 20+ | 15.33 грн |
| 25+ | 13.63 грн |
| 100+ | 11.03 грн |
| 250+ | 10.18 грн |
| 500+ | 9.67 грн |
| 1000+ | 9.10 грн |
| 2500+ | 9.00 грн |
| 74LCX04BQX |
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Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14DQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-DQFN (3x2.5)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14DQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-DQFN (3x2.5)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 5672 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.76 грн |
| 10+ | 35.45 грн |
| 25+ | 33.06 грн |
| 100+ | 23.04 грн |
| 250+ | 19.50 грн |
| 500+ | 18.61 грн |
| 1000+ | 13.51 грн |
| FDC6310P |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2P-CH 20V 2.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
на замовлення 4312 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.05 грн |
| 10+ | 43.08 грн |
| 50+ | 31.76 грн |
| 100+ | 26.37 грн |
| 500+ | 20.31 грн |
| NC7SB3157L6X |
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Виробник: onsemi
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Last Time Buy
Number of Circuits: 1
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Last Time Buy
Number of Circuits: 1
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.13 грн |
| 18+ | 17.38 грн |
| 25+ | 15.49 грн |
| 100+ | 12.53 грн |
| 250+ | 11.58 грн |
| 500+ | 11.01 грн |
| 1000+ | 10.37 грн |
| 2500+ | 10.00 грн |
| FAN4931IP5X |
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Виробник: onsemi
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
на замовлення 98988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.93 грн |
| 10+ | 55.13 грн |
| 25+ | 51.76 грн |
| 100+ | 36.82 грн |
| 250+ | 31.34 грн |
| 500+ | 29.77 грн |
| 1000+ | 22.35 грн |
| FAN2558MPX |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 180MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable, Power Good
PSRR: 50dB (100kHz)
Voltage Dropout (Max): 0.4V @ 180mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ 180MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable, Power Good
PSRR: 50dB (100kHz)
Voltage Dropout (Max): 0.4V @ 180mA
Protection Features: Over Current, Over Temperature
на замовлення 2904 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.05 грн |
| 10+ | 50.02 грн |
| 25+ | 45.17 грн |
| 100+ | 37.37 грн |
| 250+ | 34.98 грн |
| 500+ | 33.54 грн |
| 1000+ | 31.82 грн |
| FDMC8882 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
на замовлення 30235 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 62.55 грн |
| 10+ | 42.09 грн |
| 100+ | 33.63 грн |
| 500+ | 29.87 грн |
| 1000+ | 27.22 грн |
| HUF76639S3ST |
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Виробник: onsemi
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.83 грн |
| 10+ | 155.09 грн |
| 50+ | 119.08 грн |
| 100+ | 100.86 грн |
| 74ALVC16245MTDX |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
на замовлення 1776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 324.64 грн |
| 10+ | 202.21 грн |
| 25+ | 173.29 грн |
| 100+ | 131.96 грн |
| 250+ | 116.91 грн |
| 500+ | 107.65 грн |
| 74LVX161284MTDX |
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Виробник: onsemi
Description: TXRX TRANSLATING IEEE 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 8
Logic Type: IEEE STD 1284 Translation Transceiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Description: TXRX TRANSLATING IEEE 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 8
Logic Type: IEEE STD 1284 Translation Transceiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.86 грн |
| 10+ | 112.85 грн |
| BAY72TR |
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Виробник: onsemi
Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
на замовлення 7770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.34 грн |
| 16+ | 19.98 грн |
| 100+ | 10.60 грн |
| 500+ | 6.54 грн |
| 1000+ | 4.45 грн |
| 2000+ | 4.01 грн |
| 5000+ | 3.43 грн |
| FDD86113LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
на замовлення 13220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.98 грн |
| 10+ | 84.10 грн |
| 50+ | 63.30 грн |
| 100+ | 53.12 грн |
| 500+ | 42.08 грн |
| FJB5555TM |
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Виробник: onsemi
Description: TRANS NPN 400V 5A D2PAK
Description: TRANS NPN 400V 5A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| FIN1047MTCX |
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Виробник: onsemi
Description: IC TRANSCEIVER 4/0 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Description: IC TRANSCEIVER 4/0 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.31 грн |
| 10+ | 88.22 грн |
| 25+ | 80.24 грн |
| 100+ | 67.05 грн |
| 250+ | 63.11 грн |
| 500+ | 60.74 грн |
| 1000+ | 59.54 грн |
| FDD3706 |
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Виробник: onsemi
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| EGF1D |
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Виробник: onsemi
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 9074 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.88 грн |
| 14+ | 22.65 грн |
| 100+ | 17.70 грн |
| 500+ | 14.06 грн |
| 1000+ | 13.60 грн |
| HUF76609D3ST |
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Виробник: onsemi
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
на замовлення 1210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.80 грн |
| 10+ | 64.89 грн |
| 100+ | 49.72 грн |
| 500+ | 36.89 грн |
| 1000+ | 29.51 грн |
| SS15 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 28227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.05 грн |
| 10+ | 31.80 грн |
| 50+ | 23.21 грн |
| 100+ | 19.17 грн |
| 500+ | 14.56 грн |
| FDB3682 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.62 грн |
| 10+ | 143.65 грн |
| 100+ | 99.49 грн |
| 74LVX573MTCX |
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Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.9ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.9ns
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 3751 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.47 грн |
| 10+ | 35.15 грн |
| 25+ | 31.63 грн |
| 100+ | 26.00 грн |
| 250+ | 24.25 грн |
| 500+ | 23.20 грн |
| 1000+ | 22.55 грн |
| FDMS7670AS |
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Виробник: onsemi
Description: MOSFET N-CH 30V 22A/42A 8PQFN
Description: MOSFET N-CH 30V 22A/42A 8PQFN
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
| FAN4274imu8x |
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Виробник: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA (x2 Channels)
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 6 mV
Supplier Device Package: 8-MSOP
Part Status: Last Time Buy
Number of Circuits: 2
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA (x2 Channels)
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 6 mV
Supplier Device Package: 8-MSOP
Part Status: Last Time Buy
Number of Circuits: 2
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
на замовлення 15470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.14 грн |
| 10+ | 54.14 грн |
| 25+ | 50.87 грн |
| 100+ | 36.19 грн |
| 250+ | 30.80 грн |
| 500+ | 29.26 грн |
| 1000+ | 21.96 грн |
| FAN2558S15X |
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Виробник: onsemi
Description: IC REG LINEAR 1.5V 180MA SOT23-5
Description: IC REG LINEAR 1.5V 180MA SOT23-5
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.05 грн |
| 10+ | 61.84 грн |
| 25+ | 58.71 грн |
| 100+ | 45.26 грн |
| RGF1J |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 6128 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 14+ | 23.41 грн |
| 100+ | 18.61 грн |
| 500+ | 13.50 грн |
| 1000+ | 11.11 грн |
| 2000+ | 11.01 грн |
| 74LVTH574MTCX |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
товару немає в наявності
В кошику
од. на суму грн.
| ISL9R8120S3ST |
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Виробник: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| SS35 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
на замовлення 4765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.97 грн |
| 10+ | 47.81 грн |
| 50+ | 35.33 грн |
| 100+ | 29.37 грн |
| 500+ | 22.69 грн |
| GF1D |
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Виробник: onsemi
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 39753 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.72 грн |
| 11+ | 27.91 грн |
| 100+ | 17.89 грн |
| 500+ | 12.74 грн |
| 1000+ | 10.25 грн |
| 2000+ | 10.05 грн |
| RGP10M |
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Виробник: onsemi
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10951 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.55 грн |
| 12+ | 26.08 грн |
| 50+ | 18.92 грн |
| 100+ | 15.60 грн |
| 500+ | 11.77 грн |
| 74VHCT541AMTCX |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
на замовлення 2296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.97 грн |
| 10+ | 42.01 грн |
| 25+ | 37.82 грн |
| 100+ | 31.21 грн |
| 250+ | 29.16 грн |
| 500+ | 27.92 грн |
| 1000+ | 27.36 грн |
| GF1J |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 132920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.30 грн |
| 11+ | 28.82 грн |
| 50+ | 20.95 грн |
| 100+ | 17.28 грн |
| 500+ | 13.07 грн |
| FDMC7660S |
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Виробник: onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
Description: MOSFET N-CH 30V 20A/40A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
на замовлення 1757 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.69 грн |
| 10+ | 89.67 грн |
| 50+ | 67.69 грн |
| 100+ | 56.86 грн |
| 500+ | 45.18 грн |
| FDS8870 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 18A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V
Description: MOSFET N-CH 30V 18A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| HUF75329D3ST |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
на замовлення 1049 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.35 грн |
| 10+ | 73.27 грн |
| 100+ | 49.01 грн |
| 500+ | 36.22 грн |
| 1000+ | 33.07 грн |
| 1N3070TR |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 200V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE STANDARD 200V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
на замовлення 44441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.84 грн |
| 34+ | 9.00 грн |
| 50+ | 6.40 грн |
| 100+ | 5.22 грн |
| 500+ | 3.80 грн |
| 1N485BTR |
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Виробник: onsemi
Description: DIODE STANDARD 200V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
Description: DIODE STANDARD 200V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
на замовлення 10612 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.00 грн |
| 28+ | 11.06 грн |
| 100+ | 6.89 грн |
| 500+ | 4.75 грн |
| 1000+ | 4.19 грн |
| 2000+ | 3.72 грн |
| 5000+ | 3.15 грн |
| KA78RM33RTF |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Description: IC REG LINEAR 3.3V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
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| 74LCX760MTCX |
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Виробник: onsemi
Description: IC BUFF 2V/3.6V 20-TSSOP
Description: IC BUFF 2V/3.6V 20-TSSOP
на замовлення 3504 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.22 грн |
| 10+ | 38.50 грн |
| 25+ | 34.62 грн |
| 100+ | 28.50 грн |
| 250+ | 26.60 грн |
| 500+ | 25.45 грн |
| 1000+ | 24.82 грн |
| FUSB2805MLX |
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Виробник: onsemi
Description: IC TXRX 32-MLP
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
Description: IC TXRX 32-MLP
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
на замовлення 10636 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.37 грн |
| 10+ | 155.54 грн |
| 25+ | 142.49 грн |
| 100+ | 120.22 грн |
| 250+ | 113.79 грн |
| 500+ | 111.89 грн |
| FDMC86102L |
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Виробник: onsemi
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
на замовлення 9003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.20 грн |
| 10+ | 107.74 грн |
| 50+ | 81.77 грн |
| 100+ | 68.88 грн |
| 500+ | 55.10 грн |
| FSUSB22MTCX |
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Виробник: onsemi
Description: IC USB SWITCH QUAD 2X1 16TSSOP
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 750MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: IC USB SWITCH QUAD 2X1 16TSSOP
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 750MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 5089 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.27 грн |
| 10+ | 87.91 грн |
| 25+ | 73.87 грн |
| 100+ | 54.45 грн |
| 250+ | 47.14 грн |
| 500+ | 42.65 грн |
| 1000+ | 38.24 грн |
| FDMC6679AZ |
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Виробник: onsemi
Description: MOSFET P-CH 30V 11.5A/20A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
Description: MOSFET P-CH 30V 11.5A/20A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
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| SS19 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 90 V
на замовлення 22123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.80 грн |
| 10+ | 34.62 грн |
| 50+ | 25.36 грн |
| 100+ | 20.97 грн |
| 500+ | 15.99 грн |
| FDS9400A |
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Виробник: onsemi
Description: MOSFET P-CH 30V 3.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
Description: MOSFET P-CH 30V 3.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
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| EGP20D |
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Виробник: onsemi
Description: DIODE STANDARD 200V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7127 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.43 грн |
| 10+ | 56.42 грн |
| 50+ | 41.89 грн |
| 100+ | 34.90 грн |
| 500+ | 27.15 грн |
| RGF1G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 27854 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 11.09 грн |
| SS13 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 33063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.30 грн |
| 11+ | 28.75 грн |
| 50+ | 20.94 грн |
| 100+ | 17.27 грн |
| 500+ | 13.08 грн |
| FDT86102LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 6.6A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
Description: MOSFET N-CH 100V 6.6A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
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од. на суму грн.
| FDS3580 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 80V 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 9297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.07 грн |
| 10+ | 91.04 грн |
| 100+ | 61.74 грн |
| 500+ | 46.17 грн |
| 1000+ | 44.16 грн |






































