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NDT02N60ZT1G NDT02N60ZT1G onsemi Description: MOSFET N-CH 600V 300MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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NJV4030PT1G NJV4030PT1G onsemi njt4030p-d.pdf Description: TRANS PNP 40V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Qualification: AEC-Q101
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NL17SG17AMUTCG NL17SG17AMUTCG onsemi nl17sg17-d.pdf Description: IC INVERTER 3.6V 6-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1.45x1)
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NLAS5223CLMUTAG NLAS5223CLMUTAG onsemi nlas5223c-d.pdf Description: IC SWITCH SPDTX2 350MOHM 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 350mOhm
-3db Bandwidth: 24MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 5nA
Number of Circuits: 2
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NLJ27WZ14DFT2G onsemi Description: IC BUFFER DUAL CMOS SC88-6
Packaging: Tape & Reel (TR)
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NLSX4402FMUTCG NLSX4402FMUTCG onsemi nlsx4402-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Over Voltage Protection, Power-Off Protection
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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NLU1GT50AMUTCG NLU1GT50AMUTCG onsemi NLU1GT50.pdf Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1.45x1)
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NLV14490DWR2G NLV14490DWR2G onsemi mc14490-d.pdf Description: IC HEX BOUNCE ELIMINATOR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Bits: 6
Logic Type: Contact Bounce Eliminator
Operating Temperature: -55°C ~ 125°C
Supply Voltage: 3V ~ 18V
Supplier Device Package: 16-SOIC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+43.45 грн
Мінімальне замовлення: 1000
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NLV74VHC1G07DTT1G NLV74VHC1G07DTT1G onsemi mc74vhc1g07-d.pdf Description: IC BUF NON-INVERT 5.5V 16TSSOP
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NLV74VHC1GT86DTT1G NLV74VHC1GT86DTT1G onsemi mc74vhc1g86-d.pdf Description: IC GATE XOR 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 2.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV7SZ58DFT2G NLV7SZ58DFT2G onsemi nl7sz58-d.pdf Description: IC GATE MULTIFUNCT CONF SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: SC-88/SC70-6/SOT-363
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q101
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NLV9306USG NLV9306USG onsemi pca9306-d.pdf Description: IC TRANSLATOR BIDIRECTIONAL US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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NLVASB3157DFT2G NLVASB3157DFT2G onsemi nlasb3157-d.pdf Description: IC SWITCH SPDTX1 7OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm (Typ)
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NLX1G11AMUTCG NLX1G11AMUTCG onsemi NLX1G11.pdf Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NOA1212CUTAG onsemi NOA1212.pdf Description: SENSOR OPT 540NM AMBIENT 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 540nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-DFN (1.6x1.6)
Proximity Detection: No
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NRVTS12100MFST1G NRVTS12100MFST1G onsemi nts12100mfs-d.pdf Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
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NSM6056MT1G NSM6056MT1G onsemi nsm6056m-d.pdf Description: TRANS NPN 40V 0.6A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Zener Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-74
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 380 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+5.42 грн
6000+4.76 грн
Мінімальне замовлення: 3000
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NSR0170HT1G NSR0170HT1G onsemi nsr0170-d.pdf Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+1.36 грн
6000+1.22 грн
9000+1.17 грн
15000+1.05 грн
Мінімальне замовлення: 3000
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NSR01L30P2T5G NSR01L30P2T5G onsemi NSR01L30P2T5G_Rev1_Apr2014.pdf Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)
8000+3.64 грн
16000+3.37 грн
24000+3.17 грн
40000+2.95 грн
56000+2.55 грн
Мінімальне замовлення: 8000
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NSR05F30QNXT5G NSR05F30QNXT5G onsemi Description: DIODE SCHOTTKY 30V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
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NSR05F40QNXT5G NSR05F40QNXT5G onsemi Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
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NSR10F30QNXT5G NSR10F30QNXT5G onsemi Description: DIODE SCHOTTKY 30V 1A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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NSR10F40QNXT5G NSR10F40QNXT5G onsemi NSR10F40QNXT5G.pdf Description: DIODE SCHOTTKY 40V 1A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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NSR20F30QNXT5G NSR20F30QNXT5G onsemi NSR20F30QNXT5G.pdf Description: DIODE SCHOTTKY 30V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x.80)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
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NSV45035JZT1G NSV45035JZT1G onsemi nsi45035jz-d.pdf Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 70mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+22.07 грн
Мінімальне замовлення: 1000
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NSVBAS21AHT1G NSVBAS21AHT1G onsemi bas21aht1-d.pdf Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+2.28 грн
6000+1.97 грн
9000+1.74 грн
15000+1.62 грн
Мінімальне замовлення: 3000
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NSVBC817-16LT1G NSVBC817-16LT1G onsemi bc817-16lt1-d.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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NSVBC857CWT1G NSVBC857CWT1G onsemi bc856bwt1-d.pdf Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
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NSVBCP56-10T3G NSVBCP56-10T3G onsemi bcp56t1-d.pdf Description: TRANS NPN 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
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NSVBCP69T1G NSVBCP69T1G onsemi bcp69t1-d.pdf Description: TRANS PNP 20V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
1000+9.85 грн
2000+8.54 грн
3000+8.05 грн
5000+7.04 грн
7000+6.74 грн
10000+6.44 грн
Мінімальне замовлення: 1000
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NSVBCW32LT1G NSVBCW32LT1G onsemi bcw32lt1-d.pdf Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
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NSVBCX17LT1G NSVBCX17LT1G onsemi bcx17lt1-d.pdf Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
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NSVBSP19AT1G NSVBSP19AT1G onsemi bsp19at1-d.pdf Description: TRANS NPN 350V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
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В кошику  од. на суму  грн.
NSVBSS63LT1G NSVBSS63LT1G onsemi bss63lt1-d.pdf Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
3000+6.44 грн
6000+5.61 грн
9000+5.30 грн
15000+4.66 грн
21000+4.47 грн
30000+4.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVDAN222T1G NSVDAN222T1G onsemi dan222-d.pdf Description: DIODE ARRAY GP 80V 100MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVDTC143ZET1G NSVDTC143ZET1G onsemi dtc143z-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVEMC2DXV5T1G NSVEMC2DXV5T1G onsemi emc2dxv5t1-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-553
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NSVMMBT5087LT1G NSVMMBT5087LT1G onsemi mmbt5087lt1-d.pdf Description: TRANS PNP 50V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 171000 шт:
термін постачання 21-31 дні (днів)
3000+4.77 грн
6000+4.14 грн
9000+3.91 грн
15000+3.42 грн
21000+3.28 грн
30000+3.14 грн
75000+2.78 грн
150000+2.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVMUN5312DW1T2G NSVMUN5312DW1T2G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5316DW1T1G NSVMUN5316DW1T1G onsemi dtc143tp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
3000+3.83 грн
6000+3.31 грн
9000+3.12 грн
15000+2.72 грн
21000+2.60 грн
30000+2.48 грн
75000+2.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVR0240HT1G NSVR0240HT1G onsemi nsr0240h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+3.62 грн
6000+3.12 грн
9000+2.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVR0340HT1G NSVR0340HT1G onsemi nsr0340h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+6.64 грн
6000+6.11 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVR05F40NXT5G NSVR05F40NXT5G onsemi nsr05f40-d.pdf Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NSVRB751V40T1G NSVRB751V40T1G onsemi rb751v40t1-d.pdf Description: DIODE SCHOTTKY 30V 30MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+2.57 грн
6000+2.18 грн
9000+2.15 грн
15000+1.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTLUS3C18PZTAG NTLUS3C18PZTAG onsemi ntlus3c18pz-d.pdf Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
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NTLUS3C18PZTBG NTLUS3C18PZTBG onsemi ntlus3c18pz-d.pdf Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
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NTMFD4C85NT1G NTMFD4C85NT1G onsemi NTMFD4C85N.pdf Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C86NT1G NTMFD4C86NT1G onsemi NTMFD4C86N.pdf Description: MOSFET 2N-CH 30V 11.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
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NTMFD4C87NT1G NTMFD4C87NT1G onsemi NTMFD4C87N.pdf Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C88NT1G NTMFD4C88NT1G onsemi NTMFD4C88N.pdf Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFS4982NFT1G NTMFS4982NFT1G onsemi ntmfs4982nf-d.pdf Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
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NTMFS4C01NT1G NTMFS4C01NT1G onsemi ntmfs4c01n-d.pdf Description: MOSFET N-CH 30V 47A/303A 5DFN
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NTMFS4C03NT1G NTMFS4C03NT1G onsemi ntmfs4c03n-d.pdf Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+36.78 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NTMFS4C05NT1G-001 NTMFS4C05NT1G-001 onsemi NTMFS4C05N.pdf Description: MOSFET N-CH 30V 11.9A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
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NTMFS4C06NT1G-001 NTMFS4C06NT1G-001 onsemi ntmfs4c06n-d.pdf Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
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NTMFS4C09NT1G-001 NTMFS4C09NT1G-001 onsemi ntmfs4c09n-d.pdf Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
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NTMFS4C10NT1G-001 NTMFS4C10NT1G-001 onsemi ntmfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A/46A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
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NTMFS4H01NFT1G NTMFS4H01NFT1G onsemi ntmfs4h01nf-d.pdf Description: MOSFET N-CH 25V 54A/334A 5DFN
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NTMFS4H02NFT1G NTMFS4H02NFT1G onsemi ntmfs4h02nf-d.pdf Description: MOSFET N-CH 25V 37A/193A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V
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NTMFS5C404NLT1G NTMFS5C404NLT1G onsemi ntmfs5c404nl-d.pdf Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
1500+176.93 грн
Мінімальне замовлення: 1500
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NDT02N60ZT1G
NDT02N60ZT1G
Виробник: onsemi
Description: MOSFET N-CH 600V 300MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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NJV4030PT1G njt4030p-d.pdf
NJV4030PT1G
Виробник: onsemi
Description: TRANS PNP 40V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Qualification: AEC-Q101
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NL17SG17AMUTCG nl17sg17-d.pdf
NL17SG17AMUTCG
Виробник: onsemi
Description: IC INVERTER 3.6V 6-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1.45x1)
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NLAS5223CLMUTAG nlas5223c-d.pdf
NLAS5223CLMUTAG
Виробник: onsemi
Description: IC SWITCH SPDTX2 350MOHM 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 350mOhm
-3db Bandwidth: 24MHz
Supplier Device Package: 10-UQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 38pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 60pF
Current - Leakage (IS(off)) (Max): 5nA
Number of Circuits: 2
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NLJ27WZ14DFT2G
Виробник: onsemi
Description: IC BUFFER DUAL CMOS SC88-6
Packaging: Tape & Reel (TR)
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NLSX4402FMUTCG nlsx4402-d.pdf
NLSX4402FMUTCG
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Over Voltage Protection, Power-Off Protection
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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NLU1GT50AMUTCG NLU1GT50.pdf
NLU1GT50AMUTCG
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1.45x1)
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NLV14490DWR2G mc14490-d.pdf
NLV14490DWR2G
Виробник: onsemi
Description: IC HEX BOUNCE ELIMINATOR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Bits: 6
Logic Type: Contact Bounce Eliminator
Operating Temperature: -55°C ~ 125°C
Supply Voltage: 3V ~ 18V
Supplier Device Package: 16-SOIC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+43.45 грн
Мінімальне замовлення: 1000
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NLV74VHC1G07DTT1G mc74vhc1g07-d.pdf
NLV74VHC1G07DTT1G
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 16TSSOP
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NLV74VHC1GT86DTT1G mc74vhc1g86-d.pdf
NLV74VHC1GT86DTT1G
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 2.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV7SZ58DFT2G nl7sz58-d.pdf
NLV7SZ58DFT2G
Виробник: onsemi
Description: IC GATE MULTIFUNCT CONF SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: SC-88/SC70-6/SOT-363
Number of Circuits: 1
Grade: Automotive
Qualification: AEC-Q101
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NLV9306USG pca9306-d.pdf
NLV9306USG
Виробник: onsemi
Description: IC TRANSLATOR BIDIRECTIONAL US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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NLVASB3157DFT2G nlasb3157-d.pdf
NLVASB3157DFT2G
Виробник: onsemi
Description: IC SWITCH SPDTX1 7OHM SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm (Typ)
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NLX1G11AMUTCG NLX1G11.pdf
NLX1G11AMUTCG
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NOA1212CUTAG NOA1212.pdf
Виробник: onsemi
Description: SENSOR OPT 540NM AMBIENT 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 540nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-DFN (1.6x1.6)
Proximity Detection: No
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NRVTS12100MFST1G nts12100mfs-d.pdf
NRVTS12100MFST1G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
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NSM6056MT1G nsm6056m-d.pdf
NSM6056MT1G
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Zener Diode (Isolated)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-74
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 380 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.42 грн
6000+4.76 грн
Мінімальне замовлення: 3000
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NSR0170HT1G nsr0170-d.pdf
NSR0170HT1G
Виробник: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+1.36 грн
6000+1.22 грн
9000+1.17 грн
15000+1.05 грн
Мінімальне замовлення: 3000
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NSR01L30P2T5G NSR01L30P2T5G_Rev1_Apr2014.pdf
NSR01L30P2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+3.64 грн
16000+3.37 грн
24000+3.17 грн
40000+2.95 грн
56000+2.55 грн
Мінімальне замовлення: 8000
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NSR05F30QNXT5G
NSR05F30QNXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
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NSR05F40QNXT5G
NSR05F40QNXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
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NSR10F30QNXT5G
NSR10F30QNXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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NSR10F40QNXT5G NSR10F40QNXT5G.pdf
NSR10F40QNXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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NSR20F30QNXT5G NSR20F30QNXT5G.pdf
NSR20F30QNXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x.80)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
товару немає в наявності
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NSV45035JZT1G nsi45035jz-d.pdf
NSV45035JZT1G
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 70mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+22.07 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NSVBAS21AHT1G bas21aht1-d.pdf
NSVBAS21AHT1G
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.28 грн
6000+1.97 грн
9000+1.74 грн
15000+1.62 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVBC817-16LT1G bc817-16lt1-d.pdf
NSVBC817-16LT1G
Виробник: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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NSVBC857CWT1G bc856bwt1-d.pdf
NSVBC857CWT1G
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
товару немає в наявності
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NSVBCP56-10T3G bcp56t1-d.pdf
NSVBCP56-10T3G
Виробник: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
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NSVBCP69T1G bcp69t1-d.pdf
NSVBCP69T1G
Виробник: onsemi
Description: TRANS PNP 20V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+9.85 грн
2000+8.54 грн
3000+8.05 грн
5000+7.04 грн
7000+6.74 грн
10000+6.44 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NSVBCW32LT1G bcw32lt1-d.pdf
NSVBCW32LT1G
Виробник: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
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NSVBCX17LT1G bcx17lt1-d.pdf
NSVBCX17LT1G
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
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NSVBSP19AT1G bsp19at1-d.pdf
NSVBSP19AT1G
Виробник: onsemi
Description: TRANS NPN 350V 0.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
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NSVBSS63LT1G bss63lt1-d.pdf
NSVBSS63LT1G
Виробник: onsemi
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.44 грн
6000+5.61 грн
9000+5.30 грн
15000+4.66 грн
21000+4.47 грн
30000+4.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVDAN222T1G dan222-d.pdf
NSVDAN222T1G
Виробник: onsemi
Description: DIODE ARRAY GP 80V 100MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVDTC143ZET1G dtc143z-d.pdf
NSVDTC143ZET1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVEMC2DXV5T1G emc2dxv5t1-d.pdf
NSVEMC2DXV5T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-553
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NSVMMBT5087LT1G mmbt5087lt1-d.pdf
NSVMMBT5087LT1G
Виробник: onsemi
Description: TRANS PNP 50V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 171000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.77 грн
6000+4.14 грн
9000+3.91 грн
15000+3.42 грн
21000+3.28 грн
30000+3.14 грн
75000+2.78 грн
150000+2.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVMUN5312DW1T2G dtc124ep-d.pdf
NSVMUN5312DW1T2G
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5316DW1T1G dtc143tp-d.pdf
NSVMUN5316DW1T1G
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.83 грн
6000+3.31 грн
9000+3.12 грн
15000+2.72 грн
21000+2.60 грн
30000+2.48 грн
75000+2.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVR0240HT1G nsr0240h-d.pdf
NSVR0240HT1G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.62 грн
6000+3.12 грн
9000+2.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVR0340HT1G nsr0340h-d.pdf
NSVR0340HT1G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.64 грн
6000+6.11 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVR05F40NXT5G nsr05f40-d.pdf
NSVR05F40NXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NSVRB751V40T1G rb751v40t1-d.pdf
NSVRB751V40T1G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.57 грн
6000+2.18 грн
9000+2.15 грн
15000+1.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTLUS3C18PZTAG ntlus3c18pz-d.pdf
NTLUS3C18PZTAG
Виробник: onsemi
Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
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NTLUS3C18PZTBG ntlus3c18pz-d.pdf
NTLUS3C18PZTBG
Виробник: onsemi
Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
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NTMFD4C85NT1G NTMFD4C85N.pdf
NTMFD4C85NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C86NT1G NTMFD4C86N.pdf
NTMFD4C86NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
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NTMFD4C87NT1G NTMFD4C87N.pdf
NTMFD4C87NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C88NT1G NTMFD4C88N.pdf
NTMFD4C88NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFS4982NFT1G ntmfs4982nf-d.pdf
NTMFS4982NFT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
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NTMFS4C01NT1G ntmfs4c01n-d.pdf
NTMFS4C01NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 47A/303A 5DFN
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NTMFS4C03NT1G ntmfs4c03n-d.pdf
NTMFS4C03NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+36.78 грн
Мінімальне замовлення: 1500
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NTMFS4C05NT1G-001 NTMFS4C05N.pdf
NTMFS4C05NT1G-001
Виробник: onsemi
Description: MOSFET N-CH 30V 11.9A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
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NTMFS4C06NT1G-001 ntmfs4c06n-d.pdf
NTMFS4C06NT1G-001
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
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NTMFS4C09NT1G-001 ntmfs4c09n-d.pdf
NTMFS4C09NT1G-001
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
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NTMFS4C10NT1G-001 ntmfs4c10n-d.pdf
NTMFS4C10NT1G-001
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/46A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
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NTMFS4H01NFT1G ntmfs4h01nf-d.pdf
NTMFS4H01NFT1G
Виробник: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
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NTMFS4H02NFT1G ntmfs4h02nf-d.pdf
NTMFS4H02NFT1G
Виробник: onsemi
Description: MOSFET N-CH 25V 37A/193A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V
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NTMFS5C404NLT1G ntmfs5c404nl-d.pdf
NTMFS5C404NLT1G
Виробник: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+176.93 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
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