| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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FDBL86366-F085 | onsemi |
 Description: MOSFET N-CH 80V 220A 8HPSOFQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 387518 шт: термін постачання 21-31 дні (днів) |
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FCH072N60F-F085 | onsemi |
Description: MOSFET N-CH 600V 52A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCH104N60F-F085 | onsemi |
Description: MOSFET N-CH 600V 37A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4302 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 407 шт: термін постачання 21-31 дні (днів) |
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FDB86366-F085 | onsemi |
Description: MOSFET N-CH 80V 110A D2PAK Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 176W (Tj) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FFH50US60S-F085 | onsemi |
Description: DIODE STANDARD 600V 50A TO2472 Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 50 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 50A Technology: Standard Reverse Recovery Time (trr): 163 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISL9R1560P2-F085 | onsemi |
Description: DIODE AVALANCHE 600V 15A TO2202 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3713 шт: термін постачання 21-31 дні (днів) |
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FGH60N60UFDTU-F085 | onsemi |
Description: IGBT FIELD STOP 600V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 29ns/138ns Switching Energy: 2.47mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 192 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FGA6530WDF | onsemi |
Description: IGBT TRENCH FS 650V 60A TO-3PN Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Reverse Recovery Time (trr): 81 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Power - Max: 176 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Gate Charge: 37.4 nC Test Condition: 400V, 30A, 6Ohm, 15V Switching Energy: 960µJ (on), 162µJ (off) Td (on/off) @ 25°C: 12ns/42.4ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1JAF | onsemi |
Description: DIODE STANDARD 600V 1A DO214AD Packaging: Tape & Reel (TR) Package / Case: DO-214AD, SMAF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AD (SMAF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ES2DAF | onsemi |
Description: DIODE STANDARD 200V 2A DO214AD Packaging: Tape & Reel (TR) Package / Case: DO-214AD, SMAF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AD (SMAF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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FDPC5018SG | onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56 Part Status: Active Supplier Device Package: Power Clip 56 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Drain to Source Voltage (Vdss): 30V Power - Max: 1W, 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FSV240AF | onsemi |
Description: DIODE SCHOTTKY 40V 2A SMAF |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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FSV340AF | onsemi |
Description: DIODE SCHOTTKY 40V 3A DO214AD Supplier Device Package: DO-214AD (SMAF) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 485pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 12.62 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AD, SMAF Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSV530AF | onsemi |
Description: DIODE SCHOTTKY 30V 5A SMAF |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SSA210 | onsemi |
Description: DIODE SCHOTTKY 100V 2A DO214AC Current - Reverse Leakage @ Vr: 50 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Technology: Schottky Reverse Recovery Time (trr): 8.02 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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SSA24 | onsemi |
Description: DIODE SCHOTTKY 40V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.84 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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SSA36 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 10.74 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
на замовлення 637500 шт: термін постачання 21-31 дні (днів) |
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FSV340FP | onsemi |
Description: DIODE SCHOTTKY 40V 3A SOD123HE Current - Reverse Leakage @ Vr: 160 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 12.37 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSV360FP | onsemi |
Description: DIODE SCHOTTKY 60V 3A SOD123HE Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 3A Technology: Schottky Reverse Recovery Time (trr): 10.62 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR1020VL | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD123F Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 600 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 12.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1BFL | onsemi |
Description: DIODE STANDARD 100V 1A SOD123F Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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S1DFL | onsemi |
Description: DIODE STANDARD 200V 1A SOD123F Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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S1GFL | onsemi |
Description: DIODE STANDARD 400V 1A SOD123F Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -50°C ~ 150°C |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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SS13FL | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD123F Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 30 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-123F Current - Average Rectified (Io): 1A Technology: Schottky Reverse Recovery Time (trr): 5.875 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS14FL | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.695 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS24FL | onsemi |
Description: DIODE SCHOTTKY 40V 2A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.495 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 2091000 шт: термін постачання 21-31 дні (днів) |
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SS26FL | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.26 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 40 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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ES1JAF | onsemi |
Description: DIODE STANDARD 600V 1A DO214AD Packaging: Cut Tape (CT) Package / Case: DO-214AD, SMAF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AD (SMAF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 14317 шт: термін постачання 21-31 дні (днів) |
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ES2DAF | onsemi |
Description: DIODE STANDARD 200V 2A DO214AD Packaging: Cut Tape (CT) Package / Case: DO-214AD, SMAF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AD (SMAF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 52351 шт: термін постачання 21-31 дні (днів) |
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FDPC5018SG | onsemi |
Description: MOSFET 2N-CH 30V 17A PWRCLIP56 Part Status: Active Supplier Device Package: Power Clip 56 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Drain to Source Voltage (Vdss): 30V Power - Max: 1W, 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN |
на замовлення 7743 шт: термін постачання 21-31 дні (днів) |
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FSV240AF | onsemi |
Description: DIODE SCHOTTKY 40V 2A SMAF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSV340AF | onsemi |
Description: DIODE SCHOTTKY 40V 3A DO214AD Current - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AD (SMAF) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 485pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 12.62 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AD, SMAF Packaging: Cut Tape (CT) |
на замовлення 2413 шт: термін постачання 21-31 дні (днів) |
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FSV530AF | onsemi |
Description: DIODE SCHOTTKY 30V 5A SMAF |
на замовлення 11631 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSA210 | onsemi |
Description: DIODE SCHOTTKY 100V 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.02 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 110079 шт: термін постачання 21-31 дні (днів) |
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SSA24 | onsemi |
Description: DIODE SCHOTTKY 40V 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.84 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 24534 шт: термін постачання 21-31 дні (днів) |
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SSA36 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10.74 ns Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 642413 шт: термін постачання 21-31 дні (днів) |
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MBR1020VL | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.4 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A Current - Reverse Leakage @ Vr: 600 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S1AFL | onsemi |
Description: DIODE STANDARD 50V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
на замовлення 120772 шт: термін постачання 21-31 дні (днів) |
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S1BFL | onsemi |
Description: DIODE STANDARD 100V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 4395 шт: термін постачання 21-31 дні (днів) |
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S1DFL | onsemi |
Description: DIODE STANDARD 200V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 6460 шт: термін постачання 21-31 дні (днів) |
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S1GFL | onsemi |
Description: DIODE STANDARD 400V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 29120 шт: термін постачання 21-31 дні (днів) |
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SS13FL | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.875 ns Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS24FL | onsemi |
Description: DIODE SCHOTTKY 40V 2A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.495 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 2091284 шт: термін постачання 21-31 дні (днів) |
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SS26FL | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.26 ns Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 40 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 37400 шт: термін постачання 21-31 дні (днів) |
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FDBL0210N80 | onsemi |
Description: MOSFET N-CH 80V 240A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FSV10100V | onsemi |
Description: DIODE SCHOTTKY 100V 10A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22.94 ns Technology: Schottky Capacitance @ Vr, F: 796pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 100 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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FSV10120V | onsemi |
Description: DIODE SCHOTTKY 120V 10A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16.7 ns Technology: Schottky Capacitance @ Vr, F: 608pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 120 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FSV10150V | onsemi |
Description: DIODE SCHOTTKY 150V 10A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 150 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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FSV12100V | onsemi |
Description: DIODE SCHOTTKY 100V 12A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27.33 ns Technology: Schottky Capacitance @ Vr, F: 1124pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 12 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FSV12120V | onsemi |
Description: DIODE SCHOTTKY 120V 12A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 120 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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FSV12150V | onsemi |
Description: DIODE SCHOTTKY 150V 12A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12 A Current - Reverse Leakage @ Vr: 30 µA @ 150 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FSV15100V | onsemi |
Description: DIODE SCHOTTKY 100V 15A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 15 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FSV15120V | onsemi |
Description: DIODE SCHOTTKY 120V 15A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A Current - Reverse Leakage @ Vr: 35 µA @ 120 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FSV15150V | onsemi |
Description: DIODE SCHOTTKY 150V 15A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A Current - Reverse Leakage @ Vr: 30 µA @ 150 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FSV20100V | onsemi |
Description: DIODE SCHOTTKY 100V 20A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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FSV20120V | onsemi |
Description: DIODE SCHOTTKY 120V 20A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A Current - Reverse Leakage @ Vr: 35 µA @ 120 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FSV20150V | onsemi |
Description: DIODE SCHOTTKY 150V 20A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 30 µA @ 150 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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FSV8100V | onsemi |
Description: DIODE SCHOTTKY 100V 8A TO2773 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 19.64 ns Technology: Schottky Capacitance @ Vr, F: 672pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 200000 шт: термін постачання 21-31 дні (днів) |
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FDBL0210N80 | onsemi |
Description: MOSFET N-CH 80V 240A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V |
на замовлення 3349 шт: термін постачання 21-31 дні (днів) |
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FSV10100V | onsemi |
Description: DIODE SCHOTTKY 100V 10A TO2773 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22.94 ns Technology: Schottky Capacitance @ Vr, F: 796pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 100 V |
на замовлення 42940 шт: термін постачання 21-31 дні (днів) |
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| FDBL86366-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 220A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 220A 8HPSOF
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 387518 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.99 грн |
| 10+ | 179.02 грн |
| 100+ | 129.88 грн |
| 500+ | 100.83 грн |
| 1000+ | 94.03 грн |
| FCH072N60F-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FCH104N60F-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4302 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4302 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.72 грн |
| 30+ | 276.22 грн |
| 120+ | 247.13 грн |
| FDB86366-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 110A D2PAK
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Description: MOSFET N-CH 80V 110A D2PAK
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
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| FFH50US60S-F085 |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 50A TO2472
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 163 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE STANDARD 600V 50A TO2472
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.69 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Technology: Standard
Reverse Recovery Time (trr): 163 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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| ISL9R1560P2-F085 |
|
Виробник: onsemi
Description: DIODE AVALANCHE 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE AVALANCHE 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3713 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.20 грн |
| 50+ | 104.20 грн |
| 100+ | 94.12 грн |
| 500+ | 71.74 грн |
| 1000+ | 66.41 грн |
| 2000+ | 61.93 грн |
| FGH60N60UFDTU-F085 |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/138ns
Switching Energy: 2.47mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/138ns
Switching Energy: 2.47mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Grade: Automotive
Qualification: AEC-Q101
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| FGA6530WDF |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 60A TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Reverse Recovery Time (trr): 81 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 176 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 37.4 nC
Test Condition: 400V, 30A, 6Ohm, 15V
Switching Energy: 960µJ (on), 162µJ (off)
Td (on/off) @ 25°C: 12ns/42.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Description: IGBT TRENCH FS 650V 60A TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Reverse Recovery Time (trr): 81 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 176 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 37.4 nC
Test Condition: 400V, 30A, 6Ohm, 15V
Switching Energy: 960µJ (on), 162µJ (off)
Td (on/off) @ 25°C: 12ns/42.4ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
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| ES1JAF |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 11.97 грн |
| ES2DAF |
|
Виробник: onsemi
Description: DIODE STANDARD 200V 2A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A DO214AD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 14.57 грн |
| 20000+ | 13.15 грн |
| FDPC5018SG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Part Status: Active
Supplier Device Package: Power Clip 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Part Status: Active
Supplier Device Package: Power Clip 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 57.37 грн |
| FSV240AF |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMAF
Description: DIODE SCHOTTKY 40V 2A SMAF
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| FSV340AF |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A DO214AD
Supplier Device Package: DO-214AD (SMAF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 485pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AD, SMAF
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE SCHOTTKY 40V 3A DO214AD
Supplier Device Package: DO-214AD (SMAF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 485pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AD, SMAF
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
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| FSV530AF |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 5A SMAF
Description: DIODE SCHOTTKY 30V 5A SMAF
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| SSA210 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Reverse Recovery Time (trr): 8.02 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 2A DO214AC
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Reverse Recovery Time (trr): 8.02 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 11.63 грн |
| 15000+ | 11.13 грн |
| SSA24 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.84 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.84 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 9.58 грн |
| 15000+ | 9.13 грн |
| 22500+ | 9.12 грн |
| SSA36 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 637500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 9.75 грн |
| 15000+ | 8.72 грн |
| 37500+ | 8.52 грн |
| 52500+ | 7.79 грн |
| FSV340FP |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A SOD123HE
Current - Reverse Leakage @ Vr: 160 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 12.37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A SOD123HE
Current - Reverse Leakage @ Vr: 160 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 12.37 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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| FSV360FP |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 3A SOD123HE
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 3A
Technology: Schottky
Reverse Recovery Time (trr): 10.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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| MBR1020VL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD123F
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 12.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 20V 1A SOD123F
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 12.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| S1BFL |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 1A SOD123F
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 100V 1A SOD123F
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.62 грн |
| S1DFL |
|
Виробник: onsemi
Description: DIODE STANDARD 200V 1A SOD123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE STANDARD 200V 1A SOD123F
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.90 грн |
| 6000+ | 6.28 грн |
| S1GFL |
|
Виробник: onsemi
Description: DIODE STANDARD 400V 1A SOD123F
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -50°C ~ 150°C
Description: DIODE STANDARD 400V 1A SOD123F
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -50°C ~ 150°C
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.93 грн |
| 6000+ | 4.70 грн |
| 9000+ | 4.60 грн |
| 15000+ | 3.92 грн |
| 21000+ | 3.86 грн |
| SS13FL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123F
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 5.875 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A SOD123F
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 5.875 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SS14FL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.695 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.695 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SS24FL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.495 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.495 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 2091000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.59 грн |
| 6000+ | 4.87 грн |
| SS26FL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.26 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.26 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.17 грн |
| 6000+ | 6.27 грн |
| ES1JAF |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO214AD
Packaging: Cut Tape (CT)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AD
Packaging: Cut Tape (CT)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 14317 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 37.24 грн |
| 100+ | 24.11 грн |
| 500+ | 17.34 грн |
| 1000+ | 15.63 грн |
| 2000+ | 14.20 грн |
| 5000+ | 12.43 грн |
| ES2DAF |
|
Виробник: onsemi
Description: DIODE STANDARD 200V 2A DO214AD
Packaging: Cut Tape (CT)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A DO214AD
Packaging: Cut Tape (CT)
Package / Case: DO-214AD, SMAF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AD (SMAF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 52351 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.62 грн |
| 10+ | 44.18 грн |
| 100+ | 28.83 грн |
| 500+ | 20.85 грн |
| 1000+ | 18.85 грн |
| 2000+ | 17.17 грн |
| 5000+ | 15.10 грн |
| FDPC5018SG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Part Status: Active
Supplier Device Package: Power Clip 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Description: MOSFET 2N-CH 30V 17A PWRCLIP56
Part Status: Active
Supplier Device Package: Power Clip 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
на замовлення 7743 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.41 грн |
| 10+ | 89.02 грн |
| 100+ | 69.60 грн |
| 500+ | 63.46 грн |
| FSV240AF |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMAF
Description: DIODE SCHOTTKY 40V 2A SMAF
товару немає в наявності
В кошику
од. на суму грн.
| FSV340AF |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A DO214AD
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AD (SMAF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 485pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AD, SMAF
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 3A DO214AD
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AD (SMAF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 485pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 12.62 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AD, SMAF
Packaging: Cut Tape (CT)
на замовлення 2413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 11+ | 29.25 грн |
| 100+ | 20.33 грн |
| 500+ | 14.90 грн |
| 1000+ | 12.11 грн |
| 2000+ | 10.82 грн |
| FSV530AF |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 5A SMAF
Description: DIODE SCHOTTKY 30V 5A SMAF
на замовлення 11631 шт:
термін постачання 21-31 дні (днів)
| SSA210 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.02 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.02 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 110079 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 12+ | 25.59 грн |
| 100+ | 21.80 грн |
| 500+ | 16.50 грн |
| 1000+ | 12.97 грн |
| 2000+ | 12.78 грн |
| SSA24 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.84 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.84 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
на замовлення 24534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| 22+ | 13.95 грн |
| 100+ | 13.08 грн |
| 500+ | 11.05 грн |
| SSA36 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10.74 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10.74 ns
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 642413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 12+ | 25.07 грн |
| 100+ | 17.44 грн |
| 500+ | 12.78 грн |
| 1000+ | 10.39 грн |
| 2000+ | 9.29 грн |
| MBR1020VL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.4 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.4 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 µA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| S1AFL |
|
Виробник: onsemi
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 120772 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 16+ | 18.73 грн |
| 100+ | 11.83 грн |
| 500+ | 8.29 грн |
| 1000+ | 7.38 грн |
| S1BFL |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE STANDARD 100V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 4395 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 32+ | 9.40 грн |
| 100+ | 9.24 грн |
| 500+ | 8.46 грн |
| S1DFL |
|
Виробник: onsemi
Description: DIODE STANDARD 200V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 29+ | 10.45 грн |
| 100+ | 9.89 грн |
| 500+ | 8.28 грн |
| S1GFL |
|
Виробник: onsemi
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 29120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.05 грн |
| 42+ | 7.24 грн |
| SS13FL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.875 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.875 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SS24FL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.495 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.495 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 2091284 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 18+ | 16.72 грн |
| 100+ | 10.47 грн |
| 500+ | 7.31 грн |
| 1000+ | 6.49 грн |
| SS26FL |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.26 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.26 ns
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
Qualification: AEC-Q101
на замовлення 37400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 15+ | 20.82 грн |
| 100+ | 13.19 грн |
| 500+ | 9.28 грн |
| 1000+ | 8.27 грн |
| FDBL0210N80 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 180.41 грн |
| FSV10100V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22.94 ns
Technology: Schottky
Capacitance @ Vr, F: 796pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22.94 ns
Technology: Schottky
Capacitance @ Vr, F: 796pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.95 грн |
| 10000+ | 16.97 грн |
| FSV10120V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.7 ns
Technology: Schottky
Capacitance @ Vr, F: 608pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 120 V
Description: DIODE SCHOTTKY 120V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.7 ns
Technology: Schottky
Capacitance @ Vr, F: 608pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 120 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 24.91 грн |
| 10000+ | 23.00 грн |
| FSV10150V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 150V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Description: DIODE SCHOTTKY 150V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.71 грн |
| 10000+ | 16.76 грн |
| FSV12100V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27.33 ns
Technology: Schottky
Capacitance @ Vr, F: 1124pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27.33 ns
Technology: Schottky
Capacitance @ Vr, F: 1124pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 21.13 грн |
| 10000+ | 18.96 грн |
| FSV12120V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 120 V
Description: DIODE SCHOTTKY 120V 12A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 120 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FSV12150V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 150V 12A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Description: DIODE SCHOTTKY 150V 12A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 12 A
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 32.65 грн |
| 10000+ | 30.93 грн |
| FSV15100V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 15 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 22.83 грн |
| 10000+ | 20.57 грн |
| FSV15120V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 35 µA @ 120 V
Description: DIODE SCHOTTKY 120V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 35 µA @ 120 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 35.31 грн |
| FSV15150V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 150V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Description: DIODE SCHOTTKY 150V 15A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 30.12 грн |
| 10000+ | 28.27 грн |
| FSV20100V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 20A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 20A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 36.65 грн |
| FSV20120V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 20A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 35 µA @ 120 V
Description: DIODE SCHOTTKY 120V 20A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Current - Reverse Leakage @ Vr: 35 µA @ 120 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 42.55 грн |
| FSV20150V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 150V 20A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Description: DIODE SCHOTTKY 150V 20A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 38.55 грн |
| 10000+ | 36.88 грн |
| FSV8100V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19.64 ns
Technology: Schottky
Capacitance @ Vr, F: 672pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19.64 ns
Technology: Schottky
Capacitance @ Vr, F: 672pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 17.20 грн |
| 10000+ | 15.21 грн |
| 15000+ | 14.77 грн |
| 25000+ | 13.76 грн |
| FDBL0210N80 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
на замовлення 3349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 475.79 грн |
| 10+ | 309.00 грн |
| 100+ | 224.30 грн |
| 500+ | 199.55 грн |
| FSV10100V |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22.94 ns
Technology: Schottky
Capacitance @ Vr, F: 796pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22.94 ns
Technology: Schottky
Capacitance @ Vr, F: 796pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 42940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.01 грн |
| 10+ | 51.86 грн |
| 100+ | 34.09 грн |
| 500+ | 24.83 грн |
| 1000+ | 22.53 грн |
| 2000+ | 20.59 грн |