Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FDBL86561-F085 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
FDBL86361-F085 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 19023 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
FDMF3035 | onsemi |
![]() Packaging: Cut Tape (CT) Features: Bootstrap Circuit, Diode Emulation Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 50A Current - Peak Output: 50A Technology: UMOS Voltage - Load: 4.5V ~ 24V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Shoot-Through, UVLO Load Type: Inductive Part Status: Active |
на замовлення 5944 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
FAN48623UC50GX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 2.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 5.5V Topology: Boost Supplier Device Package: 16-WLCSP (1.78x1.78) Synchronous Rectifier: Yes Voltage - Output (Max): 5.2V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 5V Part Status: Active |
на замовлення 2869 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
FAN6605MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 22V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FDMA86251 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V |
на замовлення 16995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
FDMC6686P | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FDMC6688P | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FAN6605MX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 22V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FDMA86251 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V |
на замовлення 16995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
FDMC6686P | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V |
на замовлення 858 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
FDMC6688P | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
1SS351-TB-E | onsemi |
Description: RF DIODE SCHOTTKY 5V 3CP Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.9pF @ 0.2V, 1MHz Voltage - Peak Reverse (Max): 5V Supplier Device Package: 3-CP Current - Max: 30 mA |
на замовлення 5070 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SA1417S-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SA2013-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
на замовлення 3161 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SA2040-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 290MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 5696 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SA2153-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
на замовлення 2323 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SA2202-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.5 W |
на замовлення 1671 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC3646S-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 3175 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC3647S-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
на замовлення 1090 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC4027S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
на замовлення 2217 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC4027T-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
на замовлення 30662 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC5566-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.3 W |
на замовлення 1753 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC5706-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
на замовлення 1149 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC5707-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 330MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 3440 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC5964-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
на замовлення 5658 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC5994-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.3 W |
на замовлення 1012 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SC6017-TL-E | onsemi |
Description: TRANS NPN 50V 10A TPFA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 200MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 950 mW |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SD1623S-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SD1815S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 30711 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SK932-22-TB-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Current Drain (Id) - Max: 50 mA Supplier Device Package: SMCP Part Status: Obsolete Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
2SK932-23-TB-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Current Drain (Id) - Max: 50 mA Supplier Device Package: SMCP Part Status: Active Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V |
на замовлення 8467 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2SK932-24-TB-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Current Drain (Id) - Max: 50 mA Supplier Device Package: SMCP Part Status: Active Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V |
на замовлення 7673 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
3LN01S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V Power Dissipation (Max): 150mW (Ta) Supplier Device Package: SMCP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
50A02CH-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 690MHz Supplier Device Package: 3-CPH Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 700 mW |
на замовлення 10073 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
50C02CH-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 500MHz Supplier Device Package: 3-CPH Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 700 mW |
на замовлення 13789 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
5LN01SP-AC | onsemi |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
ATP112-TL-H | onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Packaging: Cut Tape (CT) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BAS16P2T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
на замовлення 248623 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAT54CLT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 77984 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAT54M3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 42378 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC846ALT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 300 mW |
на замовлення 37162 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BDW1T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
на замовлення 7779 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BVSS138LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 23960 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BVSS84LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V Qualification: AEC-Q101 |
на замовлення 114316 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT1025WI-30-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 3V Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
на замовлення 2501 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT24C04C4ATR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
на замовлення 593336 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT24C08C4ATR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 236979 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT24C512HU5IGT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
на замовлення 2066 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT24C64HU4I-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN-EP (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 5294 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT24M01HU5I-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 4303 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT24M01YI-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
CAT3200HU2-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2MHz Voltage - Input (Max): 4.5V Topology: Charge Pump Supplier Device Package: 8-UDFN (2x2) Synchronous Rectifier: No Voltage - Output (Max): 6V Voltage - Input (Min): 2.2V Voltage - Output (Min/Fixed): 2.7V (5V) Part Status: Active |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT32TDI-GT3 | onsemi |
Description: IC LED DRVR RGLTR PWM TSOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 40mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: TSOT-23-6 Dimming: PWM Voltage - Supply (Min): 2V Voltage - Supply (Max): 7V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
CAT34C02HU4IGT4A | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-UDFN-EP (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 63889 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CAT34TS02VP2GT4C | onsemi |
![]() Packaging: Cut Tape (CT) Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode Package / Case: 8-WFDFN Exposed Pad Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -45°C ~ 130°C Voltage - Supply: 3.3V Sensor Type: Digital, Local Resolution: 12 b Supplier Device Package: 8-TDFN (2x3) Test Condition: 75°C ~ 95°C (-20°C ~ 125°C) Accuracy - Highest (Lowest): ±1°C (±3°C) Sensing Temperature - Local: -20°C ~ 125°C Part Status: Active |
на замовлення 4299 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT4002ATD-GT3 | onsemi |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CAT4104VP2-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Voltage - Output: 25V Mounting Type: Surface Mount Number of Outputs: 4 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight, Lighting Current - Output / Channel: 175mA Internal Switch(s): Yes Supplier Device Package: 8-TDFN (2x3) Dimming: PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active Grade: Automotive |
на замовлення 937782 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CAT5113VI-01-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Resistance (Ohms): 1k Tolerance: ±20% Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-SOIC Resistance - Wiper (Ohms) (Typ): 1000 (Max) Temperature Coefficient (Typ): 300ppm/°C Part Status: Last Time Buy Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 416 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CAT803SSDI-GT3 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 2.93V Supplier Device Package: SC-70-3 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
FDBL86561-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 431.46 грн |
10+ | 286.65 грн |
100+ | 210.77 грн |
500+ | 167.02 грн |
FDBL86361-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 19023 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 437.09 грн |
10+ | 353.70 грн |
100+ | 286.12 грн |
500+ | 238.68 грн |
1000+ | 204.37 грн |
FDMF3035 |
![]() |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 50A
Technology: UMOS
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 50A
Technology: UMOS
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 5944 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 231.83 грн |
10+ | 144.72 грн |
100+ | 100.00 грн |
500+ | 75.92 грн |
1000+ | 70.16 грн |
FAN48623UC50GX |
![]() |
Виробник: onsemi
Description: IC REG BOOST PROG 2.5A 16WLCSP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.2V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST PROG 2.5A 16WLCSP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.2V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
на замовлення 2869 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 185.95 грн |
10+ | 112.01 грн |
25+ | 94.63 грн |
100+ | 70.36 грн |
250+ | 61.30 грн |
500+ | 55.72 грн |
1000+ | 50.22 грн |
FAN6605MX |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 22V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 22V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
FDMA86251 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
на замовлення 16995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 28.38 грн |
6000+ | 26.03 грн |
9000+ | 24.83 грн |
FDMC6686P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
FDMC6688P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
FAN6605MX |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 22V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 22V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
FDMA86251 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
на замовлення 16995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.42 грн |
10+ | 54.03 грн |
100+ | 42.05 грн |
500+ | 33.44 грн |
1000+ | 27.24 грн |
FDMC6686P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 189.97 грн |
10+ | 118.13 грн |
100+ | 81.01 грн |
500+ | 61.09 грн |
FDMC6688P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
1SS351-TB-E |
Виробник: onsemi
Description: RF DIODE SCHOTTKY 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: 3-CP
Current - Max: 30 mA
Description: RF DIODE SCHOTTKY 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: 3-CP
Current - Max: 30 mA
на замовлення 5070 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.05 грн |
12+ | 25.89 грн |
100+ | 19.87 грн |
500+ | 14.43 грн |
1000+ | 12.96 грн |
2SA1417S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.45 грн |
10+ | 43.49 грн |
100+ | 28.38 грн |
500+ | 20.54 грн |
2SA2013-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 50V 4A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS PNP 50V 4A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 3161 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.42 грн |
10+ | 41.32 грн |
100+ | 26.94 грн |
500+ | 19.46 грн |
2SA2040-TL-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 5696 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 107.86 грн |
10+ | 65.65 грн |
100+ | 43.69 грн |
2SA2153-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 50V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS PNP 50V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 2323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 50.71 грн |
11+ | 30.23 грн |
100+ | 19.49 грн |
500+ | 13.90 грн |
2SA2202-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.5 W
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.5 W
на замовлення 1671 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.66 грн |
10+ | 35.27 грн |
100+ | 24.53 грн |
500+ | 17.97 грн |
2SC3646S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 45.88 грн |
10+ | 37.83 грн |
100+ | 26.31 грн |
500+ | 19.28 грн |
2SC3647S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.66 грн |
10+ | 35.81 грн |
100+ | 24.80 грн |
500+ | 19.44 грн |
2SC4027S-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 1.5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS NPN 160V 1.5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 2217 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.01 грн |
10+ | 55.11 грн |
100+ | 38.12 грн |
2SC4027T-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS NPN 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 30662 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 99.01 грн |
10+ | 64.10 грн |
100+ | 44.77 грн |
2SC5566-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 4A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Description: TRANS NPN 50V 4A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
на замовлення 1753 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.23 грн |
10+ | 41.63 грн |
100+ | 27.11 грн |
500+ | 19.60 грн |
2SC5706-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 1149 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 107.86 грн |
10+ | 65.58 грн |
100+ | 43.56 грн |
2SC5707-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 3440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 126.38 грн |
10+ | 77.51 грн |
100+ | 52.01 грн |
2SC5964-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 5658 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.15 грн |
10+ | 34.42 грн |
100+ | 22.26 грн |
500+ | 15.97 грн |
2SC5994-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Description: TRANS NPN 50V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
на замовлення 1012 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.49 грн |
11+ | 30.70 грн |
100+ | 20.96 грн |
500+ | 15.50 грн |
2SC6017-TL-E |
Виробник: onsemi
Description: TRANS NPN 50V 10A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
Description: TRANS NPN 50V 10A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
на замовлення 46 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.81 грн |
10+ | 55.58 грн |
2SD1623S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 955 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 65.20 грн |
10+ | 39.22 грн |
100+ | 25.52 грн |
500+ | 18.40 грн |
2SD1815S-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 30711 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.69 грн |
10+ | 68.68 грн |
100+ | 45.62 грн |
2SK932-22-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
товару немає в наявності
В кошику
од. на суму грн.
2SK932-23-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 8467 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 45.08 грн |
12+ | 27.75 грн |
100+ | 13.78 грн |
500+ | 12.62 грн |
1000+ | 11.32 грн |
2SK932-24-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
на замовлення 7673 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 60.37 грн |
10+ | 35.73 грн |
100+ | 23.13 грн |
500+ | 16.60 грн |
1000+ | 14.96 грн |
3LN01S-TL-E |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 150MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Description: MOSFET N-CH 30V 150MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
50A02CH-TL-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 50V 0.5A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 690MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
Description: TRANS PNP 50V 0.5A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 690MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
на замовлення 10073 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.00 грн |
15+ | 21.47 грн |
100+ | 14.53 грн |
500+ | 10.62 грн |
1000+ | 9.62 грн |
50C02CH-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 0.5A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
Description: TRANS NPN 50V 0.5A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-CPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 700 mW
на замовлення 13789 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 35.42 грн |
12+ | 26.43 грн |
100+ | 15.84 грн |
500+ | 13.76 грн |
1000+ | 9.36 грн |
5LN01SP-AC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3SPA
Description: MOSFET N-CH 50V 100MA 3SPA
товару немає в наявності
В кошику
од. на суму грн.
ATP112-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 60V 25A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Description: MOSFET P-CH 60V 25A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
BAS16P2T5G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 248623 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.85 грн |
49+ | 6.43 грн |
100+ | 5.33 грн |
500+ | 3.65 грн |
1000+ | 3.15 грн |
2000+ | 2.85 грн |
BAT54CLT3G |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 77984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
45+ | 7.24 грн |
106+ | 2.95 грн |
110+ | 2.84 грн |
500+ | 1.82 грн |
1000+ | 1.48 грн |
2000+ | 1.36 грн |
5000+ | 1.22 грн |
BAT54M3T5G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 42378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.17 грн |
17+ | 18.60 грн |
100+ | 9.06 грн |
500+ | 7.09 грн |
1000+ | 4.93 грн |
2000+ | 4.27 грн |
BC846ALT3G |
![]() |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
на замовлення 37162 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.85 грн |
57+ | 5.50 грн |
100+ | 3.39 грн |
500+ | 2.30 грн |
1000+ | 2.01 грн |
2000+ | 1.77 грн |
5000+ | 1.48 грн |
BC856BDW1T3G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 7779 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.49 грн |
39+ | 8.14 грн |
100+ | 5.05 грн |
500+ | 3.45 грн |
1000+ | 3.04 грн |
2000+ | 2.69 грн |
5000+ | 2.27 грн |
BVSS138LT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.12 грн |
28+ | 11.16 грн |
100+ | 6.78 грн |
500+ | 6.05 грн |
1000+ | 5.31 грн |
BVSS84LT1G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Qualification: AEC-Q101
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Qualification: AEC-Q101
на замовлення 114316 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.73 грн |
23+ | 14.03 грн |
100+ | 9.42 грн |
500+ | 6.81 грн |
1000+ | 6.13 грн |
CAT1025WI-30-GT3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 2501 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 134.43 грн |
10+ | 116.43 грн |
25+ | 109.85 грн |
100+ | 87.83 грн |
250+ | 82.47 грн |
500+ | 72.16 грн |
1000+ | 58.81 грн |
CAT24C04C4ATR |
![]() |
Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
на замовлення 593336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.51 грн |
19+ | 16.59 грн |
25+ | 16.15 грн |
50+ | 14.85 грн |
100+ | 14.54 грн |
250+ | 14.13 грн |
500+ | 13.58 грн |
1000+ | 13.27 грн |
CAT24C08C4ATR |
![]() |
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 236979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.51 грн |
19+ | 16.51 грн |
25+ | 16.06 грн |
50+ | 14.77 грн |
100+ | 14.45 грн |
250+ | 14.05 грн |
500+ | 13.50 грн |
1000+ | 13.19 грн |
CAT24C512HU5IGT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2066 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 55.54 грн |
10+ | 50.07 грн |
25+ | 48.71 грн |
50+ | 44.75 грн |
100+ | 43.76 грн |
250+ | 42.44 грн |
500+ | 40.76 грн |
1000+ | 39.78 грн |
CAT24C64HU4I-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 5294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.20 грн |
11+ | 29.30 грн |
25+ | 28.56 грн |
50+ | 26.25 грн |
100+ | 25.69 грн |
250+ | 24.93 грн |
500+ | 23.96 грн |
1000+ | 23.40 грн |
CAT24M01HU5I-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 1MBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1MBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 4303 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.84 грн |
10+ | 64.03 грн |
25+ | 62.32 грн |
50+ | 57.22 грн |
100+ | 55.93 грн |
250+ | 54.23 грн |
500+ | 52.08 грн |
1000+ | 50.82 грн |
CAT24M01YI-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CAT3200HU2-GT3 |
![]() |
Виробник: onsemi
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
Part Status: Active
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
Part Status: Active
на замовлення 35 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 118.33 грн |
10+ | 83.41 грн |
25+ | 75.84 грн |
CAT32TDI-GT3 |
Виробник: onsemi
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 7V
Part Status: Active
Description: IC LED DRVR RGLTR PWM TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: TSOT-23-6
Dimming: PWM
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 7V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
CAT34C02HU4IGT4A |
![]() |
Виробник: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 63889 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.73 грн |
16+ | 19.77 грн |
25+ | 19.29 грн |
50+ | 17.71 грн |
100+ | 17.34 грн |
250+ | 16.84 грн |
500+ | 16.19 грн |
1000+ | 15.81 грн |
CAT34TS02VP2GT4C |
![]() |
Виробник: onsemi
Description: SENSOR DIGITAL -20C-125C 8TDFN
Packaging: Cut Tape (CT)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-WFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 3.3V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-TDFN (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
Part Status: Active
Description: SENSOR DIGITAL -20C-125C 8TDFN
Packaging: Cut Tape (CT)
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: 8-WFDFN Exposed Pad
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -45°C ~ 130°C
Voltage - Supply: 3.3V
Sensor Type: Digital, Local
Resolution: 12 b
Supplier Device Package: 8-TDFN (2x3)
Test Condition: 75°C ~ 95°C (-20°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±3°C)
Sensing Temperature - Local: -20°C ~ 125°C
Part Status: Active
на замовлення 4299 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 82.11 грн |
5+ | 69.45 грн |
10+ | 65.96 грн |
25+ | 58.08 грн |
50+ | 55.45 грн |
100+ | 53.04 грн |
500+ | 47.41 грн |
1000+ | 45.64 грн |
CAT4002ATD-GT3 |
![]() |
Виробник: onsemi
Description: IC LED DRIVER LIN DIM TSOT23-6
Description: IC LED DRIVER LIN DIM TSOT23-6
товару немає в наявності
В кошику
од. на суму грн.
CAT4104VP2-GT3 |
![]() |
Виробник: onsemi
Description: IC LED DRVR LIN PWM 175MA 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 4
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Lighting
Current - Output / Channel: 175mA
Internal Switch(s): Yes
Supplier Device Package: 8-TDFN (2x3)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Grade: Automotive
Description: IC LED DRVR LIN PWM 175MA 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 4
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Lighting
Current - Output / Channel: 175mA
Internal Switch(s): Yes
Supplier Device Package: 8-TDFN (2x3)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Grade: Automotive
на замовлення 937782 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 56.35 грн |
10+ | 39.14 грн |
25+ | 35.16 грн |
100+ | 28.96 грн |
250+ | 27.03 грн |
500+ | 25.86 грн |
1000+ | 24.49 грн |
CAT5113VI-01-GT3 |
![]() |
Виробник: onsemi
Description: IC DGTL POT 1KOHM 100TAP 8SOIC
Packaging: Cut Tape (CT)
Resistance (Ohms): 1k
Tolerance: ±20%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Resistance - Wiper (Ohms) (Typ): 1000 (Max)
Temperature Coefficient (Typ): 300ppm/°C
Part Status: Last Time Buy
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 1KOHM 100TAP 8SOIC
Packaging: Cut Tape (CT)
Resistance (Ohms): 1k
Tolerance: ±20%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Resistance - Wiper (Ohms) (Typ): 1000 (Max)
Temperature Coefficient (Typ): 300ppm/°C
Part Status: Last Time Buy
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 416 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 420.99 грн |
10+ | 265.41 грн |
25+ | 228.95 грн |
100+ | 176.15 грн |
250+ | 157.15 грн |
CAT803SSDI-GT3 |
![]() |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SC-70-3
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SC-70-3
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.