Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SL12T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 3.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2615 шт: термін постачання 21-31 дні (днів) |
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SM15T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 300W Power Line Protection: No Part Status: Active |
на замовлення 23866 шт: термін постачання 21-31 дні (днів) |
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SMMBT3906LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 63090 шт: термін постачання 21-31 дні (днів) |
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SMMBT5551LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 225 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMUN5214DW1T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 30464 шт: термін постачання 21-31 дні (днів) |
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SMUN5313DW1T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27569 шт: термін постачання 21-31 дні (днів) |
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SZMM3Z15VT1G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22446 шт: термін постачання 21-31 дні (днів) |
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SZMM3Z4V7T1G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22788 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ5231BT1G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18389 шт: термін постачання 21-31 дні (днів) |
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SZNUD3124DMT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 800mOhm (Max) Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SC-74 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4967 шт: термін постачання 21-31 дні (днів) |
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SZNUD3124LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 800mOhm (Max) Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 23310 шт: термін постачання 21-31 дні (днів) |
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SZNUD3160DMT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 1.8Ohm (Max) Voltage - Load: 61V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SC-74 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13776 шт: термін постачання 21-31 дні (днів) |
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TL494BDR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down, Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz Topology: Buck, Push-Pull Voltage - Supply (Vcc/Vdd): 7V ~ 40V Supplier Device Package: 16-SOIC Synchronous Rectifier: Yes Control Features: Dead Time Control, Frequency Control Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Part Status: Active Number of Outputs: 2 |
на замовлення 7431 шт: термін постачання 21-31 дні (днів) |
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VEC2616-TL-H | onsemi |
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-28FL/VEC8 Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDBL0110N60 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDBL0150N80 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FDMC8010ET30 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS8050ET30 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FCB290N80 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 212W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FDBL0110N60 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V |
на замовлення 1876 шт: термін постачання 21-31 дні (днів) |
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FDBL0150N80 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
на замовлення 2089 шт: термін постачання 21-31 дні (днів) |
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FDMS8050ET30 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
на замовлення 8495 шт: термін постачання 21-31 дні (днів) |
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FCB290N80 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 212W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V |
на замовлення 1482 шт: термін постачання 21-31 дні (днів) |
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NCP785AH150T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 22 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 15V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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NCP785AH33T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 14 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCP785AH50T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 21 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP785AH150T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 22 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 15V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 18777 шт: термін постачання 21-31 дні (днів) |
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NCP785AH33T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 14 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 3049 шт: термін постачання 21-31 дні (днів) |
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NCP785AH50T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 21 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 2412 шт: термін постачання 21-31 дні (днів) |
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FDMA86108LZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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FDMA86108LZ | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V |
на замовлення 53131 шт: термін постачання 21-31 дні (днів) |
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FAN54020UCX | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN54020UCX | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMT800150DC | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMT800100DC | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMT800150DC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
на замовлення 17609 шт: термін постачання 21-31 дні (днів) |
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FDMT800100DC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
на замовлення 2953 шт: термін постачання 21-31 дні (днів) |
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FSA553UCX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 800mOhm -3db Bandwidth: 200MHz Supplier Device Package: 9-WLCSP (1.22x1.22) Voltage - Supply, Single (V+): 1.5V ~ 3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 2 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FSA553UCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 800mOhm -3db Bandwidth: 200MHz Supplier Device Package: 9-WLCSP (1.22x1.22) Voltage - Supply, Single (V+): 1.5V ~ 3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 2 |
на замовлення 9256 шт: термін постачання 21-31 дні (днів) |
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3LN01SS-TL-E | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDDP010N25AZT4H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: DPAK/TP-FA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TND321VD-TL-H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TND322VD-TL-H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TND323VD-TL-H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDN86501LZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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FDN86501LZ | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V |
на замовлення 60344 шт: термін постачання 21-31 дні (днів) |
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FDMC86262P | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMC86262P | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
на замовлення 19144 шт: термін постачання 21-31 дні (днів) |
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FNA25060 | onsemi |
![]() Packaging: Tube Package / Case: 34-PowerDIP Module (1.480", 37.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Active Current: 50 A Voltage: 600 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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FDMS86368-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB86563-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCB110N65F | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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FDMS86368-F085 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB86563-F085 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCB110N65F | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
на замовлення 3306 шт: термін постачання 21-31 дні (днів) |
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FSB50550ASE | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Not For New Designs Current: 2 A Voltage: 500 V |
на замовлення 876 шт: термін постачання 21-31 дні (днів) |
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FSV1045V | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 45 V |
на замовлення 55974 шт: термін постачання 21-31 дні (днів) |
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FSV1060V | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 550pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 35039 шт: термін постачання 21-31 дні (днів) |
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HCPL2531SDVM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
на замовлення 755 шт: термін постачання 21-31 дні (днів) |
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KAF-4320-AAA-JP-B1 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. |
SL12T1G |
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Виробник: onsemi
Description: TVS DIODE 12VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 3.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 3.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.47 грн |
22+ | 14.14 грн |
100+ | 12.15 грн |
500+ | 10.23 грн |
SM15T1G |
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Виробник: onsemi
Description: TVS DIODE 15VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
на замовлення 23866 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.58 грн |
16+ | 19.27 грн |
100+ | 12.84 грн |
500+ | 9.65 грн |
1000+ | 7.73 грн |
SMMBT3906LT1G |
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Виробник: onsemi
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 63090 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.11 грн |
48+ | 6.42 грн |
100+ | 3.98 грн |
500+ | 2.71 грн |
1000+ | 2.38 грн |
SMMBT5551LT1G |
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Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
товару немає в наявності
В кошику
од. на суму грн.
SMUN5214DW1T1G |
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Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 30464 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.64 грн |
26+ | 12.08 грн |
100+ | 7.55 грн |
500+ | 5.21 грн |
1000+ | 4.60 грн |
SMUN5313DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27569 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 19.85 грн |
27+ | 11.39 грн |
100+ | 7.13 грн |
500+ | 4.92 грн |
1000+ | 4.35 грн |
SZMM3Z15VT1G |
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Виробник: onsemi
Description: DIODE ZENER 15V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 15V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.40 грн |
19+ | 16.36 грн |
100+ | 8.01 грн |
500+ | 6.27 грн |
1000+ | 4.36 грн |
SZMM3Z4V7T1G |
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Виробник: onsemi
Description: DIODE ZENER 4.7V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22788 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.70 грн |
37+ | 8.49 грн |
100+ | 5.73 грн |
500+ | 4.11 грн |
1000+ | 3.68 грн |
SZMMSZ5231BT1G |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18389 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.67 грн |
36+ | 8.72 грн |
100+ | 4.37 грн |
500+ | 4.00 грн |
1000+ | 3.90 грн |
SZNUD3124DMT1G |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4967 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 64.31 грн |
10+ | 37.15 грн |
25+ | 30.76 грн |
100+ | 22.08 грн |
250+ | 18.73 грн |
500+ | 16.67 грн |
1000+ | 14.70 грн |
SZNUD3124LT1G |
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Виробник: onsemi
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 23310 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.24 грн |
10+ | 42.28 грн |
25+ | 35.07 грн |
100+ | 25.28 грн |
250+ | 21.52 грн |
500+ | 19.21 грн |
1000+ | 16.99 грн |
SZNUD3160DMT1G |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13776 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 80.98 грн |
10+ | 47.17 грн |
25+ | 39.26 грн |
100+ | 28.38 грн |
250+ | 24.22 грн |
500+ | 21.67 грн |
1000+ | 19.21 грн |
TL494BDR2G |
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Виробник: onsemi
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
на замовлення 7431 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 126.23 грн |
10+ | 75.38 грн |
25+ | 63.30 грн |
100+ | 46.53 грн |
250+ | 40.21 грн |
500+ | 36.32 грн |
1000+ | 32.52 грн |
VEC2616-TL-H |
Виробник: onsemi
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Discontinued at Digi-Key
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
FDBL0110N60 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
FDBL0150N80 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 168.11 грн |
FDMC8010ET30 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
FDMS8050ET30 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 134.81 грн |
FCB290N80 |
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Виробник: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 242.56 грн |
FDBL0110N60 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
на замовлення 1876 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 491.42 грн |
10+ | 319.48 грн |
100+ | 237.95 грн |
FDBL0150N80 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 2089 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 396.95 грн |
10+ | 262.53 грн |
100+ | 192.77 грн |
500+ | 152.75 грн |
1000+ | 151.92 грн |
FDMS8050ET30 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
на замовлення 8495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 224.67 грн |
10+ | 172.09 грн |
100+ | 145.34 грн |
500+ | 125.43 грн |
1000+ | 121.83 грн |
FCB290N80 |
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Виробник: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
на замовлення 1482 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 470.78 грн |
10+ | 321.47 грн |
100+ | 245.27 грн |
NCP785AH150T1G |
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Виробник: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 32.62 грн |
5000+ | 29.07 грн |
7500+ | 27.96 грн |
NCP785AH33T1G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 30.22 грн |
NCP785AH50T1G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
NCP785AH150T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 18777 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 127.82 грн |
10+ | 76.14 грн |
25+ | 63.79 грн |
100+ | 46.76 грн |
250+ | 40.33 грн |
500+ | 36.37 грн |
1000+ | 32.51 грн |
NCP785AH33T1G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 3049 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 117.50 грн |
10+ | 69.80 грн |
25+ | 58.44 грн |
100+ | 42.85 грн |
250+ | 36.96 грн |
500+ | 33.33 грн |
1000+ | 29.79 грн |
NCP785AH50T1G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 2412 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.66 грн |
10+ | 48.70 грн |
25+ | 43.97 грн |
100+ | 36.38 грн |
250+ | 34.04 грн |
500+ | 32.63 грн |
1000+ | 30.95 грн |
FDMA86108LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 35.65 грн |
6000+ | 32.49 грн |
9000+ | 32.17 грн |
FDMA86108LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
на замовлення 53131 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 133.37 грн |
10+ | 81.19 грн |
100+ | 52.70 грн |
500+ | 39.20 грн |
1000+ | 35.02 грн |
FAN54020UCX |
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Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
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FAN54020UCX |
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Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
товару немає в наявності
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од. на суму грн.
FDMT800150DC |
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Виробник: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 262.62 грн |
FDMT800100DC |
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Виробник: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
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FDMT800150DC |
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Виробник: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
на замовлення 17609 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 558.11 грн |
10+ | 390.12 грн |
100+ | 309.54 грн |
FDMT800100DC |
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Виробник: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
на замовлення 2953 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 627.97 грн |
10+ | 429.72 грн |
100+ | 328.60 грн |
500+ | 287.82 грн |
FSA553UCX |
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Виробник: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 44.79 грн |
6000+ | 42.17 грн |
9000+ | 41.70 грн |
FSA553UCX |
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Виробник: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
на замовлення 9256 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 156.40 грн |
10+ | 94.18 грн |
25+ | 79.42 грн |
100+ | 58.87 грн |
250+ | 51.18 грн |
500+ | 46.45 грн |
1000+ | 41.78 грн |
3LN01SS-TL-E |
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Виробник: onsemi
Description: MOSFET N-CH 30V 150MA SC81
Description: MOSFET N-CH 30V 150MA SC81
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NDDP010N25AZT4H |
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Виробник: onsemi
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
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од. на суму грн.
TND321VD-TL-H |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
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од. на суму грн.
TND322VD-TL-H |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
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TND323VD-TL-H |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
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од. на суму грн.
FDN86501LZ |
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Виробник: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 63.65 грн |
FDN86501LZ |
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Виробник: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
на замовлення 60344 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 207.21 грн |
10+ | 128.97 грн |
100+ | 88.80 грн |
500+ | 67.21 грн |
1000+ | 62.02 грн |
FDMC86262P |
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Виробник: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 36.36 грн |
6000+ | 32.65 грн |
9000+ | 32.52 грн |
FDMC86262P |
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Виробник: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
на замовлення 19144 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 123.85 грн |
10+ | 79.97 грн |
100+ | 54.86 грн |
500+ | 40.72 грн |
1000+ | 37.25 грн |
FNA25060 |
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Виробник: onsemi
Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4275.90 грн |
FDMS86368-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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FDB86563-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
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FCB110N65F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 219.54 грн |
FDMS86368-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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од. на суму грн.
FDB86563-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
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од. на суму грн.
FCB110N65F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
на замовлення 3306 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 419.97 грн |
10+ | 300.29 грн |
100+ | 258.76 грн |
FSB50550ASE |
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Виробник: onsemi
Description: MODULE SPM 500V 2A SPM5Q
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
Description: MODULE SPM 500V 2A SPM5Q
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
на замовлення 876 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 832.79 грн |
10+ | 554.94 грн |
100+ | 415.41 грн |
FSV1045V |
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Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
на замовлення 55974 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 107.97 грн |
10+ | 71.25 грн |
100+ | 56.87 грн |
500+ | 41.53 грн |
1000+ | 36.57 грн |
2000+ | 35.70 грн |
FSV1060V |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 35039 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.73 грн |
10+ | 72.40 грн |
100+ | 57.18 грн |
500+ | 42.45 грн |
1000+ | 36.30 грн |
2000+ | 35.81 грн |
HCPL2531SDVM |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
на замовлення 755 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 169.89 грн |
10+ | 117.65 грн |
100+ | 90.37 грн |
500+ | 73.53 грн |
KAF-4320-AAA-JP-B1 |
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Виробник: onsemi
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
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од. на суму грн.